JP2001129800A - Substrate with field-through and manufacturing method therefor - Google Patents

Substrate with field-through and manufacturing method therefor

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Publication number
JP2001129800A
JP2001129800A JP31366699A JP31366699A JP2001129800A JP 2001129800 A JP2001129800 A JP 2001129800A JP 31366699 A JP31366699 A JP 31366699A JP 31366699 A JP31366699 A JP 31366699A JP 2001129800 A JP2001129800 A JP 2001129800A
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Prior art keywords
substrate
feed
wiring
material
groove
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Pending
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JP31366699A
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Japanese (ja)
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Masaki Esashi
正喜 江刺
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Japan Science & Technology Corp
科学技術振興事業団
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Priority to JP31366699A priority Critical patent/JP2001129800A/en
Publication of JP2001129800A publication Critical patent/JP2001129800A/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09563Metal filled via
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0369Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Abstract

PROBLEM TO BE SOLVED: To provide a new substrate material realizing the simplification of a packaging process of a microdevice and furthermore contributing too miniaturization of a micropackage product in the manufacture of 2 micropackage product mounting a micromachine sensor, an actuator and the like.
SOLUTION: Wiring (33) passing through from the reverse side of a substrate (31) to the front side thereof installed within the substrate (31) used as a package for microdevice. The wiring brings about an electric continuity between the front side of the substrate (31) and the reverse side thereof.
COPYRIGHT: (C)2001,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この出願の発明は、フィードスルー付き基板とその製造方法に関するものである。 BACKGROUND OF THE INVENTION This application relates to a manufacturing method and a feedthrough with the substrate. さらに詳しくは、マイクロマシンセンサーやアクチュエータ等を搭載したマイクロチップの製造において、マイクロデバイスをパッケージする工程を単純化することにより、製造の歩留まりを改善し、さらに、パッケージ工程の加工精度や信頼性を向上するのに有用なフィードスルー付き基板とその製造方法に関するものである。 More specifically, improvement in the production of microchips equipped with micromachine sensor and actuators, by simplifying the process of packaging micro devices, to improve the yield of production, furthermore, the machining accuracy and reliability of the packaging process a method for producing the same and useful feed through attached substrate to.

【0002】 [0002]

【従来の技術とその課題】工業用製品の小型化と信号の高速化,高機能化に伴い、多種複数のチップ状マイクロデバイスを1つのモジュール内に組み込むマルチチップモジュール技術が実用化され、多くのマイクロマシンセンサーやアクチュエータの開発が盛んに行われるようになってきている。 Faster Related Art and Its Problems] miniaturization of industrial products and signals, become more sophisticated, multi-chip module technology incorporating a wide plurality of chip-like micro-device in one module is commercialized, many the development of micro-machine sensors and actuators have come to be actively carried out.

【0003】従来、マイクロデバイスのパッケージにおいては、貫通孔が穿孔されたガラス製の基板が用いられている。 Conventionally, in the packaging of micro devices, glass substrates having a through-hole is perforated is used. この基板上に電極や配線を形成する際には、フォトリソグラフィによるレジストの形成がなされるが、 When forming an electrode and a wiring on the substrate is formed of a resist by photolithography is performed,
貫通孔の位置に細心の注意が払われなければならなかった。 Careful attention to the position of the through-hole had to be taken.

【0004】また、マイクロデバイスのパッケージは、 [0004] In addition, the micro device of the package,
上記の貫通孔が穿孔された基板をマイクロデバイスの上部に、電極や配線が組み込まれた基板をマイクロデバイスの下部に、それぞれ対向せしめ、それら2枚の基板でマイクロデバイスを挟みこむことによりなされる。 The substrate in which a through hole is drilled in the the upper portion of the microdevice, made the substrate electrodes and wires are incorporated in the lower portion of the micro device, respectively opposition, by sandwiching the microdevice at their two substrates . 挟みこまれるマイクロデバイスのSiは、上部の基板の貫通孔を通じての外部配線との接合、および、下部の基板の配線との接触により、電気的な導通を得ている。 Si of the sandwiched microdevices, joining with the external wiring via the through-hole of the upper substrate, and, by contact with the bottom of the board wiring, to obtain electrical conduction. この接合工程においては、基板と接合するSiと接合しないS In this bonding step, S is not bonded to the Si to be bonded to the substrate
iを、それぞれ正しく形成するために、接合しないSi The i, in order to properly form respectively, not bonded Si
に相対する部分のガラス基板上には電極を配置し、これを基板の反対側から引き出して、接合しないSiと基板とを同電位にしてシールドしていた。 The electrode was placed on the glass substrate of the portion facing, which is pulled out from the opposite side of the substrate, the Si and the substrate which is not bonded was shielded at the same potential. このとき、基板上の電極からガラス基板の反対側への導通は必須のものであり、この導通が不充分である場合には接合プロセスは失敗する。 At this time, conduction from the electrode on the substrate to the opposite side of the glass substrate is indispensable for the bonding process fails when the conduction is insufficient.

【0005】このように、従来のマイクロデバイスのパッケージは、複雑な工程を経てなされるものであり、工程の簡略化による歩留まりの改善が望まれていた。 [0005] Thus, the conventional micro device packaging, which is made through a complicated process, improvement of yield due to simplification of the process has been desired. また、従来の穿孔されたガラス製の基板を用いた方法においては、貫通孔のピッチをこれ以上狭くすることが難しく、製品の小型化の妨げとなっていた。 In the method using the substrate made conventional perforated glass, it is difficult to narrow the pitch of the through holes more, which hinders the miniaturization of products.

【0006】この出願の発明は、以上の通りの事情に鑑みてなされたものであり、マイクロマシンセンサーやアクチュエータ等を搭載したマイクロパッケージ製品の製造において、マイクロデバイスのパッケージ工程の単純化を実現し、さらには、マイクロパッケージ製品の小型化にも貢献する新しい基板材料を提供することを課題としている。 [0006] The invention of this application has been made in view of the circumstances as per above, in the manufacture of micro-package products with micromachine sensor and actuators, to achieve simplification of the packaging process of the microdevice, further is an object to provide a new substrate material also contributes to the miniaturization of micro packaged products.

【0007】 [0007]

【課題を解決するための手段】この出願の発明は、上記の課題を解決するものとして、マイクロデバイスのパッケージに用いられる基板であって、基板内部に基板表面から基板裏面を貫通する配線を具備し、この配線により基板表面と基板裏面の間に電気的導通を有することを特徴とするフィードスルー付き基板を提供する(請求項1)。 [Means for Solving the Problems] This application invention, as to solve the above problems, a substrate for use in packaging of micro devices, comprising a wire penetrating the substrate rear from the substrate surface into the substrate and to provide a feed-through with the substrate, characterized in that it comprises an electrical conduction between the substrate surface and the substrate backside by the wiring (claim 1).

【0008】また、この出願の発明であるフィードスルー付き基板の製造方法であって、配線材料に配線パターンマスクを形成し、配線材料をエッチングすることにより溝を形成し、次いで、この溝に基板材料を充填し、さらに、研磨により成形することを特徴とするフィードスルー付き基板の製造方法を提供する(請求項2)。 [0008] A manufacturing method of a is feedthrough with substrate the invention of this application, a wiring pattern mask is formed on the wiring material to form a groove by a wiring material is etched, then, the substrate in the groove material filling the further provides a method for producing a feed-through with the substrate, which comprises forming by polishing (claim 2).

【0009】この出願の発明であるフィードスルー付き基板は、基板の材料がパイレックスガラス、または、S [0009] Feed-through with the substrate, the inventor of this application, the material of the substrate is Pyrex glass or,, S
i−B−Oガラスであること(請求項3)、配線の材料が、金属またはSiであること(請求項4)を特徴とする。 It is i-B-O glass (claim 3), the material of the wiring, wherein it is a metal or Si to (claim 4).

【0010】さらに、この出願の発明であるフィードスルー付き基板の製造方法であって、配線材料に配線パターンマスクを形成し、配線材料をエッチングすることにより溝を形成し、次いで、この溝にパイレックスガラスを溶融することにより充填し、さらに、研磨により成形することを特徴とするフィードスルー付き基板の製造方法(請求項5)、および、この出願の発明であるフィードスルー付き基板の製造方法であって、フィードスルー付き基板の製造方法であって、配線材料に配線パターンマスクを形成し、配線材料をエッチングすることにより溝を形成し、次いで、この溝にSi−B−Oガラスのスートを堆積し、約1100℃でアニールすることにより充填し、さらに、研磨により成形することを特徴とするフィードスルー付 Furthermore, a process for the preparation of a feed-through with the substrate, the inventor of this application, a wiring pattern mask is formed on the wiring material, the wiring material to form a groove by etching, then, Pyrex in the groove filled by melting the glass, further, the manufacturing method of the feed-through with the substrate, which comprises forming by polishing (claim 5), and, a method of manufacturing the a is feedthrough with substrate the invention of this application Te, a method for producing a feed-through with the substrate, a wiring pattern mask is formed on the wiring material, the wiring material to form a groove by etching, then depositing a soot of Si-B-O glass in the groove and, filled by annealing at about 1100 ° C., further feed with through, characterized in that shaping by grinding 基板の製造方法(請求項6)も提供する。 Method of manufacturing a substrate (claim 6) are also provided.

【0011】そして、この出願の発明は、フィードスルー付き基板の製造方法であって、基板材料をエッチングすることで溝を形成し、この溝に配線材料を充填し、さらに研磨により成形することを特徴とする基板の製造方法(請求項7)を提供し、エッチングをRIE法(Re [0011] Then, the invention of this application provides a method for producing a feed-through with the substrate, that the substrate material to form a groove by etching, filling the wiring material in the grooves is further shaped by polishing provides a method of manufacturing a substrate (claim 7), wherein the etching RIE method (Re
active Ion Etching)により行い、 Carried out by active Ion Etching),
配線材料の充填をメッキ法により行うことを特徴とする基板の製造方法(請求項8)、対向する前記のフィードスルー付き基板の間に、マイクロデバイスを挟みこみパッケージすることにより製造されることを特徴とするマイクロマシンセンサーおよびアクチュエータ(請求項7)も提供する。 The method of manufacturing a substrate, characterized by performing the filling of the wiring material by plating (claim 8), between the feed-through substrate with opposing, that is produced by packaging nipping microdevices micromachined sensors and actuators, wherein (claim 7) is also provided.

【0012】 [0012]

【発明の実施の形態】この出願の発明は上記のとおりの特徴をもつものであるが、以下にその実施の形態について説明する。 DETAILED DESCRIPTION OF THE INVENTION The claimed invention is those having the features as described above, it will be described embodiments thereof hereinafter.

【0013】この出願の発明のフィードスルー付き基板は、マイクロマシンセンサーやアクチュエータ等のマイクロデバイスをパッケージするのに用いられる。 [0013] Feed-through substrate with the invention of this application is used to package a micro device such as a micro-machine sensors and actuators. このフィードスルー付き基板は、図1に示すように、基板表面から基板裏面を貫通する形で配線(1)が基板(2)内部に組み込まれており、この配線により、基板表面と基板裏面の間には電気的導通を有する。 The feedthrough with the substrate, as shown in FIG. 1, the wiring in the form of penetrating the substrate rear from the substrate surface (1) is incorporated in the substrate (2), this wiring board surface and the back surface of the substrate between an electrically conductive.

【0014】この出願の発明であるフィードスルー付き基板の製造方法としては、まず、配線材料上に対して配線パターンのマスキングが施され、この配線材料上のマスクに対してエッチングが行われる事により凹凸状の溝が形成される。 [0014] As a method for producing a feed-through with the substrate, the inventor of this application, first, the masking of the wiring pattern is subjected to the above wiring material by etching is performed on the mask on the wiring material uneven groove is formed. 次いで、この溝に対して基板材料の充填がなされ、さらに、基板の両面を研磨することにより成形がなされる。 Then, the filling of the substrate material is made to this groove, further, the molding is performed by polishing the both sides of the substrate.

【0015】前記の配線材料上に対する配線パターンのマスキングは、感光樹脂膜や金属によるメッキによってなされる。 [0015] The masking of the wiring pattern for the wiring material above is accomplished by plating with a photosensitive resin film or a metal. また、前記のエッチングとしては、リアクティブイオンエッチング等の異方性エッチングが実施される。 Further, as the etching, anisotropic etching such as reactive ion etching is performed.

【0016】この出願の発明のフィードスルー付き基板においては、基板部分の材料として、パイレックスガラス、Si−B−Oガラスなどのガラス材料が用いられる。 [0016] In the feed-through with the substrate of the invention of this application, the material of the substrate portion, Pyrex glass, a glass material such as Si-B-O glass used. また、この基板の材料として、エポキシ樹脂などの各種の樹脂材料が用いられてもよい。 Further, as the material of the substrate, it may be used various resin materials such as epoxy resin.

【0017】また、基板内部に表裏面を貫通する形で埋設される配線の材料としては、たとえば、金属材料またはSiなどが用いられる。 [0017] Suitable materials for the wiring to be embedded in a manner to penetrate the front and back surfaces in the substrate, for example, such as a metallic material or Si can be used. 基板部分の材料としてパイレックスガラスが用いられる場合には、基板上の溝に対するパイレックスガラスの溶融により充填がなされる。 If the Pyrex glass is used as the material of the substrate portion, filling is done by melting of Pyrex glass to the groove on the substrate. また、基板部分の材料としてSi−B−Oガラスが用いられる場合には、基板上の溝にSi−B−Oガラスのスートを堆積し、約1100℃でアニールすることにより充填がなされる。 Further, when the Si-B-O glass is used as the material of the substrate portion, to deposit soot Si-B-O glass in a groove on the substrate, filling is done by annealing at about 1100 ° C..

【0018】 [0018]

【実施例】基板部分の材料にパイレックスガラス、また、配線部分の材料にSiを用いた場合におけるフィードスルー付き基板の製造方法を、図2を用いて説明する。 EXAMPLES Pyrex glass material of the substrate portion, also, a method of manufacturing a feedthrough with a substrate in the case of using Si as the material of the wiring portion will be described with reference to FIG.

【0019】厚さ1mm程度のSiウェハー(21) [0019] The thickness of 1mm about the Si wafer (21)
(図2(A))に対して、所望の配線パターンをマスクするために、Siウェハー表面に対してNiメッキ(2 (FIG. 2 (A)) with respect to mask desired wiring pattern, Ni plating against Si wafer surface (2
2)が施される(図2(B))。 2) is performed (FIG. 2 (B)). そして、リアクティブイオンエッチングによりSiウェハーに溝(23)が形成され、その後、Niの除去がなされる(図2 Then, the Si wafer groove (23) is formed by reactive ion etching, then the removal of Ni is made (FIG. 2
(C))。 (C)). この溝に対して、融解したパイレックガラス(24)を充填し(図2(D))、生成物の両面を研磨することにより、この出願の発明であるフィードスルー付き基板は完成する(図2(E))。 Against the groove, filled with molten pie REC glass (24) (FIG. 2 (D)), by polishing the both sides of the product, the feed-through with the substrate, the inventor of this application is completed (FIG. 2 (E)).

【0020】この出願の発明のフィードスルー付き基板は、基板表面に電極や配線を設置することも可能である。 The feedthrough attached substrate of the invention of this application, it is also possible to install electrodes or wiring on the substrate surface. この出願の発明のフィードスルー付き基板は、平坦な表面を持つものであるから、基板に貫通孔を穿孔する従来方法と比較し、基板表面に電極や配線を設置する際のフォトリソグラフィーやエッチングなどの基板表面処理が容易であるという特長を持つ。 Feedthrough substrate with the invention of the present application, since those having a flat surface, as compared with the conventional method of drilling a through hole in a substrate, such as photolithography and etching for installing an electrode and a wiring on the substrate surface with the feature that the substrate surface treatment is easy.

【0021】さらに、この出願の発明においては、図3 Furthermore, in the invention of this application, FIG. 3
に例示するように、対向するフィードスルー付き基板(31)の間に機能性マイクロデバイス(32)を挟みこむことによりパッケージを施し、マイクロマシンセンサーやアクチュエータなどの機能を有するマイクロパッケージが製造される。 As illustrated in, subjected to packages by sandwiching a functional microdevice (32) between opposing feedthrough with the substrate (31), micro-package with features such as micromachine sensor or actuator is manufactured. この出願の発明のマイクロパッケージは、材料である基板が穴を持たないことから、その製造工程において封止もれといったの不良が発生しにくく、また、機能性マイクロデバイス(32)を構成するSi部と基板の配線部(33)との接合の不良も生じにくい。 Micropackage of the invention of this application constitutes since the substrate is a material does not have a hole, defect hardly occurs to such sealing leakage in the manufacturing process, also functional micro devices (32) Si parts and wiring portion of the substrate (33) and failure hardly occurs in junction. また、フィードスルー付き基板(31)を部品としてセンサやマイクロアクチュエータを構成する場合に、フィードスルー付き基板(31)と接合しないSi Further, in the case of the sensor and micro-actuator feedthrough with substrate (31) as a component, not joined to the feed-through with the substrate (31) Si
(34)と基板とを同電位にするための電極(35)に配線部(33)を接触させ、電極(35)から基板外部への電気的導通を得ることができるため、シールドを確実かつ容易に施すことも可能となる。 (34) and the substrate is brought into contact with the wiring portion (33) to the electrode (35) to the same potential, it is possible from the electrode (35) to obtain electrical conduction to the substrate outside, and reliably shield it is possible readily apply it.

【0022】この出願の発明のフィードスルー付き基板は、前記の通り、配線を基板内部に具備するものであるから、パッケージされるマイクロデバイスとの電気的導通に係る基板上の面積を、従来法と比較して少なくする事が可能であり、その結果として、パッケージ製品の小型化が実現される。 The feedthrough substrate with the invention of this application, as described above, since the wiring is to provided within the substrate, the area on the substrate according to the electrical connection between the micro device to be packaged, a conventional method it is possible to reduce as compared with, as a result, miniaturization of packaged products is achieved. 狭ピッチで、高精度に位置決めされた、フィードスルーを実現できることになる。 At a narrow pitch, which is positioned with high precision, it becomes possible to realize a feed-through. またこれにより、センサやアクチュエータの、外部端子取り出しに係る部分の面積を小型化できることから、センサやアクチュエータのトータルの大きさを小型化できる。 Also Thus, the sensors and actuators, since it can be miniaturized area of ​​a portion of the external terminal is taken out, the size of the sensors and actuators of the total can be miniaturized.

【0023】プロセスが簡易化されるとともに、歩留りが大幅に向上する。 [0023] with the process is simplified, the yield is significantly improved.

【0024】 [0024]

【発明の効果】この出願の発明によって、マイクロデバイスのパッケージ製品の製造工程において、パッケージの単純化が実現され、製品の歩留まりが改善される。 [Effect of the Invention By the invention of this application, in a manufacturing process of packaging products of the micro device, simplification of the package is achieved, product yield is improved. また、この出願の発明は、製造されるマイクロデバイスのパッケージ製品の信頼性向上や小型化にも貢献するものであり、その実用化が期待される。 The invention of this application is contribute to improved reliability and miniaturization of packaging products of the micro device to be manufactured, the practical use is expected.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】この出願の発明であるフィードスルー付き基板を示す概略図である。 1 is a schematic diagram showing a feed-through with the substrate, the inventor of this application.

【図2】この出願の発明であるフィードスルー付き基板の製造方法を示す概略図である。 2 is a schematic diagram showing a manufacturing method of a is feedthrough with substrate the invention of this application.

【図3】この出願の発明であるフィードスルー付き基板を用いたマイクロデバイスのパッケージの例を示す概略図である。 Figure 3 is a schematic diagram showing an example of a microdevice packages and using the feed-through with the substrate is the invention of this application.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 配線 2 基板 21 Siウェハー 22 Niメッキ 23 溝 24 パイレックガラス 31 フィードスルー付き基板 32 機能性マイクロデバイス 33 配線部 34 基板と接合しないSi 35 電極 1 wiring 2 board 21 Si wafer 22 Ni plating 23 groove 24 pi REC glass 31 feedthrough with substrate 32 functional microdevice 33 does wiring portion 34 bonded to the substrate Si 35 electrodes

Claims (9)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 マイクロデバイスのパッケージに用いられる基板であって、基板内部に基板表面から基板裏面を貫通する配線を具備し、この配線により基板表面と基板裏面の間に電気的導通を有することを特徴とするフィードスルー付き基板。 1. A substrate for use in a micro device package, comprising a wire penetrating the substrate rear from the substrate surface into the substrate, having an electrical conduction between the substrate surface and the substrate backside by the wiring feed-through substrate with and said.
  2. 【請求項2】 請求項1記載のフィードスルー付き基板の製造方法であって、配線材料に配線パターンマスクを形成し、配線材料をエッチングすることにより溝を形成し、次いで、この溝に基板材料を充填し、さらに、研磨により成形することを特徴とするフィードスルー付き基板の製造方法。 2. A method for producing a feed-through with the substrate according to claim 1, a wiring pattern mask is formed on the wiring material, the wiring material to form a groove by etching, then, the substrate material into the groove filling the further method of manufacturing a feedthrough with a substrate, which comprises forming by grinding.
  3. 【請求項3】 基板の材料がパイレックスガラス、または、Si−B−Oガラスであることを特徴とする請求項1記載のフィードスルー付き基板。 3. A process according to claim 1 feedthrough substrate with, wherein the material of the substrate is Pyrex glass, or a Si-B-O glass.
  4. 【請求項4】 配線の材料が、金属またはSiであることを特徴とする請求項1記載のフィードスルー付き基板。 4. A wiring material, the feed-through with the substrate according to claim 1, wherein the metal or Si.
  5. 【請求項5】 請求項1記載のフィードスルー付き基板の製造方法であって、配線材料に配線パターンマスクを形成し、配線材料をエッチングすることにより溝を形成し、次いで、この溝にパイレックスガラスを溶融することにより充填し、さらに、研磨により成形することを特徴とするフィードスルー付き基板の製造方法。 5. A method for producing a feed-through with the substrate according to claim 1, a wiring pattern mask is formed on the wiring material, the wiring material to form a groove by etching, then, Pyrex glass in the groove filled by melting the further method of manufacturing a feedthrough with a substrate, which comprises forming by grinding.
  6. 【請求項6】 請求項1記載のフィードスルー付き基板の製造方法であって、配線材料に配線パターンマスクを形成し、配線材料をエッチングすることにより溝を形成し、次いで、この溝にSi−B−Oガラスのスートを堆積し、約1100℃でアニールすることにより充填し、 6. A method for producing a feed-through with the substrate according to claim 1, a wiring pattern mask is formed on the wiring material, the wiring material to form a groove by etching, then, the groove Si- depositing a soot B-O glass, filled by annealing at about 1100 ° C.,
    さらに、研磨により成形することを特徴とするフィードスルー付き基板の製造方法。 Furthermore, the manufacturing method of the feed-through with the substrate, which comprises forming by grinding.
  7. 【請求項7】 請求項1記載のフィードスルー付き基板の製造方法であって、基板材料をエッチングすることで溝を形成し、この溝に配線材料を充填しさらに研磨により成形することを特徴とするフィードスルー付き基板の製造方法。 7. A process according to claim 1, wherein the feed-through with the substrate, and characterized in that the substrate material to form a groove by etching, molded by further polishing filled with wiring material in the groove method for manufacturing a feed-through substrate with that.
  8. 【請求項8】 請求項7において、エッチングをRIE 8. The method of claim 7, the etch RIE
    (ReactiveIon Etching)により行い、配線材料の充填をメッキにより行うことを特徴とするフィードスルー付き基板の製造方法。 (Reactive Etching) is performed by method of the feed-through with the substrate which is characterized in that the plating filling of interconnect material.
  9. 【請求項9】 対向する請求項1記載のフィードスルー付き基板の間に、マイクロデバイスを挟みこみパッケージすることにより製造されることを特徴とするマイクロマシンセンサーおよびアクチュエータ。 9. between opposite claim 1, wherein the feed-through substrate with micromachined sensors and actuators, characterized in that it is manufactured by packaging nipping microdevices.
JP31366699A 1999-11-04 1999-11-04 Substrate with field-through and manufacturing method therefor Pending JP2001129800A (en)

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