JP2003115614A - Method of fabricating light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of fabricating light emitting device in which chromaticity deviation in each orientation and uneveness of tint from the light emission observing plane are extremely lowered and wavelength conversion efficiency is improved. SOLUTION: There is provided the method of fabricating light emitting device comprising a light emitting element allocated on a support, a phosphor which emits the light by absorbing at least a part of the light emitted from a light emitting element and then converts the wavelength of the light, and a coating layer including the phosphor for covering the entire surface of the light emitting element from the surface of support. In the method of fabricating this light emitting device, under the condition that the light emitting element allocated on the support is heated, this element is sprayed with the coating solution including the phosphor from the upper side, while the coating direction is spirally rotated. Moreover, diameter of spiral coating is increased as the coating position comes closer to the surface of the light emitting element from the position where the spraying is started at the upper side of the light emitting element.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an illumination light source, LE.
The present invention relates to a method for forming a light emitting device used for a D display, a backlight light source, a traffic light, an illuminated switch, various sensors, various indicators, and the like.

[0002]

2. Description of the Related Art In recent years, a light emitting device (white light emitting device) capable of emitting white light has been developed and used by combining a light emitting element composed of a gallium nitride compound semiconductor and a phosphor. It has become to. In this light emitting device, a part of blue light output from a light emitting element is wavelength-converted by a phosphor, and white light is emitted by mixing the wavelength-converted light and the blue light from the light emitting element. In the past, for example, it was produced by molding a package or the like on which a light emitting element was mounted with a resin containing a phosphor.

FIG. 1 is a schematic sectional view showing the structure of a conventional LED package in which LEDs of light emitting elements are mounted. 2 is a package, 3 is an LED chip, 4 is an external electrode, 5 is a conductive wire, 6 is a molding member, and 11 is L.
The coating layer on the ED chip and 12 are the coating layers on the support. The LED chip is housed in a package and adhered to one of the external electrodes via an insulating adhesive. The pair of positive and negative electrodes of the LED chip are wire-bonded to the external electrodes by conductive wires. The coating layer on the LED chip and on the support contains a phosphor for wavelength conversion of the light output from the light emitting element.

[0004]

However, in the conventional LED package, the thickness of the coating layer (amount of phosphor) is different in each part of the surface of the light emitting device, and the light amount from the light emitting device and the light amount from the phosphor are partly different. Were different. In particular, the coating layer is not formed in the corner portion of the light emitting element, and the wavelength conversion by the phosphor is not performed in the corner portion of the light emitting element, resulting in a decrease in the wavelength conversion efficiency of the entire light emitting element.

Therefore, it is an object of the present invention to provide a light emitting device in which the deviation of chromaticity in each direction and the unevenness of color tone as seen from the emission observation surface are extremely reduced, and the efficiency of wavelength conversion is improved.

[0006]

The present invention according to claim 1 provides a light emitting device arranged on a support, and a fluorescent light which absorbs at least a part of light emitted from the light emitting device and converts the wavelength to emit light. A method for manufacturing a light-emitting device comprising a body and a coating layer having the phosphor and covering the entire surface of the light-emitting element from the surface of the support, wherein the light-emitting element arranged on the support is heated. In this state, the coating liquid containing the phosphor is sprayed from above the light emitting element while being atomized and spirally rotated, and is a method for manufacturing a light emitting device.

As a result, the deviation of the chromaticity in each direction and the unevenness of the color tone seen from the emission observation surface can be made extremely small,
A light emitting device with improved wavelength conversion efficiency can be provided.

The present invention according to claim 2 is characterized in that the diameter of the spiral shape increases as it approaches the surface of the light emitting element from an injection start point above the light emitting element. It is a manufacturing method of a light emitting device.

As a result, it is possible to provide a light emitting device with improved workability, with extremely small deviation in chromaticity in each direction and unevenness in color tone as seen from the emission observation surface, and with improved wavelength conversion efficiency. it can.

Furthermore, the present invention according to claim 3 is characterized in that the rotation speed of the coating liquid decreases as the injection starting point above the light emitting element approaches the surface of the light emitting element. 1 is a method for manufacturing a light emitting device.

As a result, the surface of the light emitting device is not impacted by the phosphor particles contained in the coating liquid, and the deviation of the chromaticity in each direction and the unevenness of the color tone when viewed from the emission observation surface are made extremely small. A light emitting device with improved wavelength conversion efficiency can be provided.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As a result of various experiments, the present inventor has found that a phosphor placed on the upper surface, side face and corner of a light emitting device and a phosphor placed on a support other than the above. It has been found that the unevenness in color tone on the light emission observation surface and the variation among the light emitting devices can be improved by distributing the light emission substantially evenly, and the present invention has been accomplished.

It is considered that the unevenness of color tone on the light emission observation surface and the variation among the light emitting devices are caused by the inclination in the planar distribution of the phosphor contained in the coating layer when the coating layer is formed. That is, the coating layer can be placed on a desired cup by discharging the resin containing the phosphor from a tube such as a thin nozzle.

However, it is extremely difficult to apply the phosphor contained in the binder onto the light emitting element in an equal amount uniformly and at high speed. Further, the shape of the coating layer to be finally formed is not constant due to the viscosity of the binder and the surface tension of the package surface in contact with the coating layer. The thickness of the coating layer (amount of phosphor) is partially different,
The light amount from the light emitting element and the light amount from the phosphor are partially different.

As a result, the emission color from the light emitting element is partially increased on the emission observation surface, or the emission color from the phosphor is increased to cause uneven color tone. In addition, it is considered that variations occur among the light emitting devices. In the present invention, the unevenness of color tone and the directivity can be improved by uniformly disposing the phosphors formed on the light emitting element and the other portions.

FIG. 2 is a schematic cross-sectional view showing an example of a light emitting device manufactured by the method of the present invention, showing a structure in which an LED of a light emitting element is mounted on an LED package. 102 is a package, 103 is an LED chip, 104 is an external electrode,
105 is a conductive wire, 106 is a mold member, 11
1 is a coating layer on the LED chip, and 112 is a coating layer on the support. The LED chip is housed in a package and adhered to one of the external electrodes via an insulating adhesive. The pair of positive and negative electrodes of the LED chip is
Each is wire-bonded to an external electrode by a conductive wire. The coating layer on the upper surface, the side surface, and the corners of the LED chip and on the support includes a phosphor for wavelength conversion of the light output from the light emitting element. Further, the light emitting element and the coating layer are sealed by the mold member.

The constituent members of the present invention will be described in detail below with reference to FIG. [Coating layers 111, 112] The coating layers 111, 112 used in the present invention are provided in a cup of a mount lead or in an opening of a package separately from the molding member, and convert the light emission of the LED chip 103. And a resin or glass that binds the phosphor. The coating layers 111 and 112 of the present invention are
The thickness of the coating layer 111 provided on the upper surface, the side surface and the corner of the LED chip 103 is substantially equal to the thickness of the coating layer 112 provided on the support other than the LED chip. The coating layer is the LED chip 103.
The coating layer is a continuous layer without any break even at the corners.

In the coating layer, L
High-energy light emitted from the ED chip is also reflected, resulting in high density. Further, the phosphor may be reflected and scattered by the phosphor to expose the coating layer to high-density and high-energy light. Therefore, when a nitride-based semiconductor having high emission intensity and capable of emitting high-energy light is used as an LED chip, Si, Al, Ga, Ti, Ge, P, which has light resistance to the high-energy light, is used. It is preferable to use an oxide having one or more of B and alkaline earth metals as a binder or a binder.

One of the specific main materials of the coating layer is SiO ₂ , Al ₂ O ₃ , MSiO ₃ (M, Zn, Ca, Mg, Ba, Sr, etc.). A translucent inorganic member containing a phosphor is preferably used. A phosphor is bound by these translucent inorganic members and deposited in layers on the LED chip and the support.

Hereinafter, SiO ₂ and Al ₂ O ₃ will be described as an example of the specific main material of the coating layer. (Coating layer fluorescent substance is bound by SiO ₂₎ coating layer phosphor by SiO ₂ becomes bound, the phosphor alkyl silicate and high boiling organic solvent to the silica sol during obtained by mixing at a predetermined ratio Formed by preparing a coating solution in which (powder) is uniformly dispersed, spray coating or dispensing silica sol in which the phosphor is dispersed so as to cover the entire surface of the light emitting device, and then fixing the SiO ₂ component. can do.

Alkyl silicates used as concrete reinforcing agents, plastic pigments, surface coating agents, etc. have the following structural formulas. Here, R is an alkyl group, which is methyl silicate for a methyl group, ethyl silicate for an ethyl group, N-propyl silicate for an n-propyl group, and N-butyl silicate for an n-butyl group.

[0022]

[Chemical 1]

Ethyl silicate, which is a kind of alkyl silicate, has a structure as shown in the following figure, and is a colorless and transparent liquid mainly synthesized from the reaction between silicon tetrachloride and ethanol or the reaction between metallic silicon and ethanol. Is.

[0024]

[Chemical 2]

When ethyl silicate is reacted with water in the presence of a catalyst, a hydrolysis reaction occurs as follows.

[0026]

[Chemical 3]

Therefore, the phosphor is bound with SiO ₂ produced by hydrolyzing ethyl silicate, and SiO ₂ is bound.
Thus, the coating layer to which the phosphor is bound can be formed on the surface of the light emitting element and on the support other than the surface of the light emitting element. (Al ₂ O ₃ by the coating layer fluorescent substance is bound) Al ₂ O ₃ with a coating layer where the fluorescent substance is bound, aluminum alcoholate or aluminum alkoxide and a high boiling organic solvent and a predetermined, A coating solution in which a phosphor (powder) was uniformly dispersed in silica sol mixed in a ratio was prepared, and the silica sol in which the phosphor was dispersed was spray-coated or dispensed so as to cover the entire surface of the light emitting device. Later, A
It can be formed by fixing the l ₂ O ₃ component.

Aluminum alcoholate or aluminum alkoxide is a thickening agent for coating materials, a gelling agent,
It is an organic aluminum compound used as a dispersant for coins, polymerization catalysts, and pigments.

Aluminum alcoholate, or aluminum isopropoxide, aluminum ethoxide, and aluminum butoxide, which are one of the aluminum alkoxides, are colorless and transparent liquids at room temperature and are highly reactive, and are highly reactive in the air. Moisture produces aluminum hydroxide, which is then heated to produce aluminum oxide. For example, aluminum isopropoxide easily reacts with water as described below, and finally becomes aluminum hydroxide or alumina.

[0030]

[Chemical 4]

Therefore, after the aluminum isopropoxide is reacted with the water in the air, A is produced by heating.
Al ₂ O containing a phosphor by binding the phosphor with l ₂ O _3
The coating layer formed by binding the phosphor by ₃ can be formed as a coating layer on the surface of the light emitting element and on the support other than the surface of the light emitting element.

SiO above_TwoBound the phosphor by
Coating layer and Al _TwoO_ThreeBy phosphor
The coating layer formed by binding the same
SiO on the child_TwoThe fluorescent material is bound by
Coating layer only, or Al_TwoO_ThreeCauses the phosphor to
You may form only the coating layer which is made in India.
And SiO_TwoCoated with a phosphor bound by
Swing layer and Al_TwoO _ThreeBound the phosphor by
On the same light emitting device by combining
Two or more layers may be formed in each. In the present invention
According to the method of forming the coating layer by play, two layers
It is also possible to control the film thickness of
The coating layer can be easily formed. example
For example, first place Al on the same light emitting device._TwoO_ThreeBy co
Forming a coating layer on which SiO 2 is formed._TwoBy coaty
Forming a coating layer. Here, the phosphor is included in both two layers.
May be included, contained in only one layer, or
It does not have to be included in both layers. Configured like this
Then SiO_TwoThe fluorescent substance is bound by
The refractive index of the coating layer is Al_TwoO_ThreeCauses the phosphor to
Smaller than the refractive index of the coating layer made in India,
Al_TwoO_ThreeCoated with a fluorescent substance
The refractive index of the cladding layer is the refractive index of the gallium nitride-based compound semiconductor layer.
The efficiency is higher than that of the light extraction efficiency.
There is a fruit.

The coating layer formed by binding the phosphor with SiO ₂ or the coating layer formed by binding the phosphor with Al ₂ O ₃ is an inorganic substance unlike conventional resins. Also, it can be used in combination with a light-emitting device (ultraviolet light-emitting device) that emits ultraviolet light because its deterioration by ultraviolet rays is extremely smaller than that of resin. Further, by spray coating, a coating layer in which a phosphor having a wavelength conversion function is bound can be formed with the same film thickness on the entire surface of the light emitting element, that is, the upper surface, the side surface, and the corner portion.
Phosphors are uniformly dispersed and arranged on the entire surface of the light emitting device.
Thereby, the entire surface of the nitride semiconductor light emitting device, that is, the upper surface,
It is possible to convert the light emitted from the side surface and the corner portion into a wavelength with extremely high efficiency and take it out to the outside.

On the other hand, in the structure in which the phosphor is dispersed in the resin as in the conventional example, most of the resin is deteriorated by the ultraviolet rays contained in the blue light, so that an element that can withstand long-term use is used. Since it cannot be constructed, it has been more difficult to put a white light emitting device using a light emitting element that emits light in the ultraviolet region into practical use. Further, according to the conventional method, a coating layer or a resin in which a phosphor is bound by SiO ₂ containing a phosphor having a wavelength conversion function is formed on the entire surface of the light emitting element, that is, the upper surface, the side surface, and the corner portion with the same film thickness. Therefore, the phosphors were not uniformly dispersed and arranged on the entire surface of the light emitting device. Therefore, it is difficult to convert the wavelength of the light emitted from the entire surface of the nitride semiconductor light emitting device with extremely high efficiency and take it out to the outside. [Fluorescent substance] The fluorescent substance used in the present invention means a fluorescent substance which is excited by light emitted from at least the semiconductor light emitting layer of the LED chip 103 to emit light. In the present embodiment, a phosphor that is excited by ultraviolet light to generate light of a predetermined color can be used as the phosphor, and as a specific example, for example, (1) Ca ₁₀ (PO ₄ ) ₆ FCl: S is used.
b, Mn (white), (2) Re ₅ (PO ₄ ) ₃ Cl: E
u (however, Re is at least one selected from Sr, Ca, Ba, and Mg) (blue), (3) BaMg ₂ Al
₁₆ O ₂₇ : Eu (blue), (4) BaMg ₂ Al ₁₆
O ₂₇ : Eu, Mn (green), (5) (SrEu) O.
Al ₂ O ₃ (green), (6) 3.5MgO · 0.5Mg
F ₂ · GeO ₂ : Mn (red), (7) Y ₂ O ₂ S: E
u (red), (8) Mg ₆ As ₂ O ₁₁ : Mn (red), (9) Sr ₄ Al ₁₄ O ₂₅ : Eu (blue-green) (1
0) (Zn, Cd) S: Cu (yellow) (11) SrAl
₂ O ₄ : Eu (yellow) (12) Ca ₁₀ (PO ₄ ) ₆ C
lBr: Mn, Eu (blue) (13) Gd ₂ O ₂ : Eu
(Red) and (14) La ₂ O ₂ S: Eu (red).

These phosphors may be used alone or in a mixture in a coating layer consisting of one layer. Further, they may be used alone or as a mixture in a coating layer composed of two or more layers.

When the light emitted by the LED chip 103 and the light emitted by the phosphor have a complementary color relationship, white light can be emitted by mixing the respective lights. Specifically, when the light from the LED chip 103 and the light of the phosphor excited and emitted by the LED chip 103 respectively correspond to the three primary colors of light (red, green, and blue), or the LED chip 103 emits light. Examples include blue light and yellow light of a phosphor that is excited by the light and emits light.

The emission color of the light emitting device can be adjusted by variously adjusting the ratio of the phosphor to various resins that act as a binder for the phosphor, inorganic members such as glass, the sedimentation time of the phosphor, and the shape of the phosphor. Also, by selecting the emission wavelength of the LED chip, it is possible to provide an arbitrary white color tone such as a light bulb color. It is preferable that the light from the LED chip and the light from the phosphor are efficiently transmitted through the mold member to the outside of the light emitting device.

As a concrete phosphor, cadmium zinc sulfide activated with copper or yttrium activated with cerium
Aluminum / garnet-based phosphors can be mentioned. In particular, when using for a long time at high brightness (Re _1-x S
_{m x) 3 (Al 1-} y Ga y) 5 O 12: Ce (0 ≦ x <1,0
≦ y ≦ 1, where Re is at least one element selected from the group consisting of Y, Gd, and La. ) And the like are preferable. Especially as a phosphor (Re _1-x Sm _x ) ₃ (Al _1-y
When Gay) ₅ O ₁₂ : Ce is used, it is placed in contact with or in close proximity to the LED chip to obtain irradiance (Ee)
= 3 W · cm ⁻² or more and 10 W · cm ⁻² or less, a light emitting device having high efficiency and sufficient light resistance can be obtained.

[0039] _{(Re 1-x Sm x)} 3 (Al 1-y Ga y)
_{Since the 5} O ₁₂ : Ce phosphor has a garnet structure, it is resistant to heat, light and moisture, and has an excitation spectrum peak of 470 nm.
It can be made nearby. Also, the emission peak is 5
It can have a broad emission spectrum in the vicinity of 30 nm and tailing to 720 nm. Moreover, the emission wavelength is shifted to a short wavelength by substituting a part of Al in the composition with Ga, and the emission wavelength is shifted to a long wavelength by substituting a part of Y in the composition with Gd. By changing the composition in this way, it is possible to continuously adjust the emission color. Therefore, the ideal condition for converting the blue-based light emission of the nitride semiconductor into the white-based light emission is provided such that the intensity on the long wavelength side is continuously changed by the composition ratio of Gd.

Such phosphors include Y, Gd, Ce and S.
An oxide or a compound that easily becomes an oxide at high temperature is used as a raw material for m, Al, La and Ga, and they are sufficiently mixed in a stoichiometric ratio to obtain a raw material. Or Y, Gd, C
e, a coprecipitated oxide obtained by firing a solution obtained by coprecipitating a solution of rare earth elements of Sm in an acid at a stoichiometric ratio with oxalic acid, aluminum oxide, and gallium oxide to prepare a mixed raw material. obtain. An appropriate amount of a fluoride such as ammonium fluoride is mixed as a flux into the crucible and packed in a crucible.
A fired product is obtained by firing in the temperature range of 50 to 1450 ° C. for 2 to 5 hours. Next, ball-mill the baked product in water and wash it.
The desired phosphor can be obtained by separating, drying, and finally passing through a sieve.

In the light emitting device of the present invention, the phosphor is 2
You may mix the fluorescent substance of a kind or more. That is, Al, G
a, Y, the content of La and Gd and Sm are two or more kinds of _{(Re 1-x Sm x)} 3 (Al 1-y Ga y) 5 O 12: RGB wavelength components by mixing Ce phosphor Can be increased. In addition, at present, there are variations in the emission wavelength of the semiconductor light emitting device, so that it is possible to obtain a desired white light by mixing and adjusting two or more kinds of phosphors. Specifically, by adjusting and containing the amount of phosphors having different chromaticity points according to the emission wavelength of the light emitting element, light is emitted at any point on the chromaticity diagram connected between the phosphors and the light emitting element. be able to.

Such a phosphor can be dispersed in a gas phase or a liquid phase and uniformly emitted. The fluorescent substance in the gas phase or the liquid phase settles due to its own weight. In particular, by allowing the suspension to stand in the liquid phase, a layer having a more uniform phosphor can be formed. It is possible to form a desired amount of phosphor by repeating a plurality of times as desired.

Two or more kinds of the phosphors formed as described above may be present in the coating layer consisting of one layer on the surface of the light emitting device, or one kind or two kinds respectively in the coating layer consisting of two layers. There may be two or more types. By doing so, white light is obtained by mixing the colors of light from different phosphors. In this case, it is preferable that the average particle diameter and the shape of the respective phosphors are similar in order to mix the light emitted from the respective phosphors better and reduce the color unevenness. [LED Chip 103] The LED chip 103 used as the light emitting element in the present embodiment is capable of exciting a phosphor. LED chip 10 which is a light emitting element
3 is GaAs, In on the substrate by MOCVD method or the like.
P, GaAlAs, InGaAlP, InN, AlN,
A semiconductor such as GaN, InGaN, AlGaN, InGaAlN is formed as a light emitting layer. Examples of the structure of the semiconductor include a homo structure having a MIS junction, a PIN junction and a PN junction, a hetero structure, or a double hetero structure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Further, the semiconductor active layer may be formed as a thin film in which a quantum effect is generated, and may have a single quantum well structure or a multiple quantum well structure. Preferably,
A nitride-based compound semiconductor (general formula In _i Ga _j Al that can efficiently excite phosphors and can efficiently emit light having a relatively short wavelength)
_k N, where 0 ≦ i, 0 ≦ j, 0 ≦ k, i + j + k =
1).

When a gallium nitride compound semiconductor is used, sapphire, spinel, SiC, S are used as the semiconductor substrate.
Materials such as i, ZnO and GaN are preferably used. It is more preferable to use a sapphire substrate in order to form gallium nitride having good crystallinity. When growing a semiconductor film on a sapphire substrate, it is preferable to form a buffer layer of GaN, AlN or the like, and to form a gallium nitride semiconductor having a PN junction thereon. In addition, GaN selectively grown on a sapphire substrate using SiO ₂ as a mask.
The single crystal itself can also be used as the substrate. In this case, the light emitting element and the sapphire substrate can be separated by etching away SiO ₂ after forming each semiconductor layer. The gallium nitride-based compound semiconductor exhibits N-type conductivity in a state where it is not doped with impurities. In the case of forming a desired N-type gallium nitride semiconductor such as improving the luminous efficiency, Si, Ge, Se, N
It is preferable to introduce Te, C and the like as appropriate. On the other hand, when forming a P-type gallium nitride semiconductor, P-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped.

The gallium nitride-based compound semiconductor is difficult to be P-type by only doping it with a P-type dopant, so that after the P-type dopant is introduced, it is annealed by heating in a furnace, low-speed electron beam irradiation, plasma irradiation or the like to make it a P-type. It is preferable. As a specific layer structure of the light emitting element, an N-type contact layer which is a gallium nitride semiconductor, an aluminum nitride / gallium semiconductor is provided on a sapphire substrate having a buffer layer formed of gallium nitride, aluminum nitride, or the like at low temperature or silicon carbide. A laminated N-type clad layer, an active layer that is an indium gallium nitride semiconductor doped with Zn and Si, a P-type clad layer that is an aluminum nitride / gallium semiconductor, and a P-type contact layer that is a gallium nitride semiconductor. Are preferred. LED
In order to form the chip 103, in the case of the LED chip 103 having a sapphire substrate, after forming exposed surfaces of the P-type semiconductor and the N-type semiconductor by etching or the like, a sputtering method or a vacuum deposition method is used on the semiconductor layer. Then, each electrode having a desired shape is formed. In the case of SiC substrate,
The pair of electrodes can be formed by utilizing the conductivity of the substrate itself.

Next, the formed semiconductor wafer or the like is directly full-cut with a dicing saw in which a blade having a diamond edge is rotated, or after a groove having a width wider than the edge width is cut (half-cut), The semiconductor wafer is broken by an external force. Alternatively, an extremely thin scribe line (meridian line) is drawn in a semiconductor wafer, for example, in a grid pattern by a scriber in which a diamond needle at the tip moves reciprocally in a straight line, and then the wafer is split by external force to be cut into chips. In this way, the LED chip 103, which is a nitride-based compound semiconductor, can be formed.

When light is emitted from the light emitting device of the present invention, the main emission wavelength of the LED chip 103 is preferably 350 nm or more and 530 nm or less in consideration of the complementary color with the phosphor. [Package 102] The package 102 serves as a support body that fixes and protects the LED chip 103 in the recess. Further, it has an external electrode 104 that can be electrically connected to the outside. It is also possible to form the package 102 having a plurality of openings according to the number and size of the LED chips 103.
Further, it is preferable that the light emitting observation surface side of the package 102 is colored in a dark color system such that it is colored in a dark color system such as black or gray in order to have a light shielding function. Package 10
In addition, in order to further protect the LED chip 103 from the external environment, in addition to the coating layers 111 and 112, a mold member 106 which is a translucent protector can be provided. The package 102 includes the coating layers 111 and 11
It is preferable that the adhesiveness is good and the rigidity with respect to 2 and the molding member 106 is high. It is desired to have an insulating property in order to electrically shut off the LED chip 103 and the outside. Further, when the package 102 is affected by heat from the LED chip 103 or the like, it is preferable that the package 102 has a small coefficient of thermal expansion in consideration of the adhesiveness with the mold member 106.

The inner surface of the recess of the package 102 can be embossed to increase the adhesion area, or plasma treated to improve the adhesion to the mold member. The package 102 may be formed integrally with the external electrode 104, or the package 102 may be divided into a plurality of pieces and combined by fitting or the like. Such a package 102 can be formed relatively easily by insert molding or the like. Polycarbonate resin, polyphenylene sulfide (P
Resins such as PS), liquid crystal polymer (LCP), ABS resin, epoxy resin, phenol resin, acrylic resin and PBT resin, ceramics, metals and the like can be used.
When a light emitting device that uses an LED chip that emits light including ultraviolet rays is used at high output, the resin deteriorates due to ultraviolet rays, and the light emitting efficiency decreases due to yellowing of the resin and the life of the light emitting device decreases due to the decrease in mechanical strength. It is possible that the Therefore, it is more preferable to use a metal as a package material because the package does not deteriorate like a resin even when an LED chip that emits light including ultraviolet rays is used at high output.

Various dyes and pigments are preferably used as the coloring agent for coloring the package 102 in a dark color system. Specific examples include _{Cr 2 O 3, MnO 2,} Fe 2 O 3 or carbon black are preferably exemplified.

The LED chip 103 and the package 102 can be adhered to each other with a thermosetting resin or the like.
Specifically, an epoxy resin, an acrylic resin, an imide resin, or the like can be given. When a light emitting device using an LED chip that emits light including ultraviolet rays is used at high output, the LED
The bonding portion between the chip 103 and the package 102 is LE
Ultraviolet rays and the like emitted from the D chip are also reflected by the resin of the sealing member, the phosphor contained therein, etc., and the density becomes particularly high in the package. Therefore, it is conceivable that the resin of the adhesive portion is deteriorated by the ultraviolet rays, and the luminous efficiency is reduced due to the yellowing of the resin and the life of the light emitting device is reduced due to the reduction of the adhesive strength. In order to prevent the deterioration of the bonded portion due to such ultraviolet rays, it is more preferable to use glass or a resin containing an ultraviolet absorber to perform the bonding. In particular, when a metal material is used for the package, the LED chip 103 and the package 102 are bonded by using eutectic solder such as Au-Sn. Therefore, unlike a case where a resin is used for adhesion, the adhesion part does not deteriorate even when a light emitting device using an LED chip that emits light including ultraviolet rays is used at high output.

Further, Ag paste, carbon paste, ITO paste, metal bumps and the like are preferably used for arranging and fixing the LED chip 103 and electrically connecting to the external electrodes 104 in the package 102. [External Electrode 104] The external electrode 104 is the package 10
2 LED chip 10 in which electric power from the outside is arranged inside
It is intended to be used to supply the No. 3 supply. Therefore, various types such as those using a conductive pattern provided on the package 102 or a lead frame can be used. Also, the external electrode 104 can be formed in various sizes in consideration of heat dissipation, electrical conductivity, characteristics of the LED chip 103, and the like. External electrode 104
It is preferable that the LED chips 103 are arranged and the heat emitted from the LED chips 103 is radiated to the outside, so that the LED chips 103 have good thermal conductivity. The specific electric resistance of the external electrode 104 is preferably 300 μΩ · cm or less, and more preferably 3 μΩ · cm or less. Moreover, the specific thermal conductivity is 0.01 cal / (s) (cm ² ) (° C / c
m) or higher, more preferably 0.5 cal /
(s) (cm ² ) (° C / cm) or more.

As such an external electrode 104, a copper or phosphor bronze plate whose surface is plated with a metal such as silver, palladium or gold or a solder plating is preferably used. When a lead frame is used as the external electrode 104, it can be used in various ways depending on electrical conductivity and thermal conductivity, but from the viewpoint of workability, the plate thickness is preferably 0.1 mm to 2 mm. As the external electrode 104 provided on a support such as glass epoxy resin or ceramic,
A copper foil or a tungsten layer can be formed. When a metal foil is used on the printed board, the thickness of the copper foil or the like is preferably 18 to 70 μm. Further, gold, solder plating or the like may be applied on the copper foil or the like. [Conductive Wire 105] The conductive wire 105 is required to have good ohmic contact with the electrode of the LED chip 103, mechanical connectivity, electrical conductivity, and thermal conductivity. The thermal conductivity is 0.01 cal / (s) (cm ² ).
(° C / cm) or more, more preferably 0.5c
Al / (s) (cm ² ) (° C / cm) or more. The diameter of the conductive wire 105 is preferably Φ1 in consideration of workability and the case of forming a high-power light emitting device.
It is 0 μm or more and Φ70 μm or less. Specific examples of such a conductive wire 105 include a conductive wire using a metal such as gold, copper, platinum, aluminum, or an alloy thereof. Such a conductive wire 105
Can easily connect the electrodes of each LED chip 103 to the inner leads, mount leads and the like by a wire bonding device. [Molding Member 106] The molding member 106 includes the LED chip 103, the conductive wire 105, and the coating layer 11 containing a fluorescent substance depending on the intended use of the light emitting device.
1, 112 and the like can be provided to protect them from the outside or to improve the light extraction efficiency. The mold member 106 can be formed using various resins, glass, or the like. As a specific material for the molding member 106, a transparent resin having excellent weather resistance such as an epoxy resin, a urea resin, a silicone resin, or a fluororesin, or glass is preferably used. Further, by including a diffusing agent in the mold member, it is possible to reduce the directivity from the LED chip 103 and increase the viewing angle. Such a mold member 106 may use the same material as the binder of the coating layer, or may use a different material. Further, the mold member 106 may contain an ultraviolet absorber together with the phosphor. As a result, ultraviolet rays that are transmitted without being converted by the phosphor contained in the coating layer are completely absorbed by the mold member 106, and thus a safe light emitting device that does not leak ultraviolet rays to the outside can be formed.

When a metal package is used to hermetically seal the LED chip 103 together with nitrogen gas or the like, the mold member 106 is not an essential component of the present invention. Further, even when a light emitting device is formed using an LED chip that emits ultraviolet rays, a resin that is resistant to ultraviolet rays such as a fluororesin can be used as the molding member. [Spray Device 300] In the present embodiment, as shown in FIGS. 2 and 4, a container 301 for containing the coating liquid,
A valve 302 for adjusting the flow rate of the coating liquid, a circulation pump 303 for transporting the coating liquid to the nozzle 201 and then to the container 301, and a nozzle 201 for ejecting the coating liquid in a spiral shape are transport pipes 307 and 308, respectively. , 30
The spray device 300 tied at 9 is used. (Container 301) A stirrer 304 is attached to the container 301 that stores the coating liquid, and the coating liquid is constantly stirred during the coating operation. The coating liquid stored in the container 301 is constantly stirred by the stirrer 304, and the phosphor contained in the coating liquid is always uniformly dispersed in the solution. (Valve 302) The valve 302 adjusts the flow rate of the coating liquid transported from the container 301 through the transport pipe 309 by opening and closing the valve. (Circulation Pump 303) The circulation pump 303 transfers the coating liquid from the container 301 to the valve 302 and the compressor 305.
Via the carrier pipe 309 to the tip portion of the nozzle 201, and then the coating liquid remaining without being ejected from the nozzle 201 is carried to the container 301 via the carrier pipe 308. The coating liquid is supplied to the container 3 by the circulation pump 303.
01 through the valve 302 to the tip of the nozzle 201 through the transfer pipe 309, and then the transfer pipe 30.
Since it is conveyed to the container 301 through 8, it is always circulating in the spray device. Therefore, since the coating liquid is agitated or circulated over the entire spray device, the phosphor contained in the coating liquid is always in a uniform dispersed state during the coating operation. (Compressor 305) The compressor 305 is installed in the apparatus via the carrier pipe 307 or 309, and compresses the air carried through the carrier pipe 307,
The pressure of the coating liquid transported through the transport pipe 309 is adjusted. The compressed air and the pressure-adjusted coating liquid are respectively conveyed to the nozzle 201 by the compressor 305. Here, the pressure of the compressed air is monitored by the pressure gauge 306.

An operation handle is attached in front of the nozzle, and by adjusting the grip of the handle,
The structure is such that the amount of the coating liquid ejected from the tip of the nozzle can be adjusted.

Using the spray device 300 as described above, the coating liquid is jetted at high speed together with the high-pressure gas, and is applied on the upper surface, side surface and corner of the light emitting element. (Nozzle 201) In a conventional spray device equipped with a nozzle for ejecting a mist-like coating liquid on a gas flow directed vertically to the upper surface of the light-emitting element, the side surface of the light-emitting element is parallel to the ejection direction of the coating liquid, and Immediately after the start, the spray composed of the atomized coating solution passes through the side surface of the light emitting element. In addition, the coating was difficult to be applied on the surface of the light emitting device which is shaded by the conductive wire, and the thickness of the coating layer was different from that on the surface of the light emitting device which was not shaded by the conductive wire. Therefore, if you want to cover the entire surface of the light-emitting element, rotate the light-emitting element or the nozzle to direct the entire surface of the light-emitting element in the ejection direction of the coating liquid, or repeat the coating on the surface of the support on which the light-emitting element is mounted. The side surface of the light emitting device has to be covered with a thick coating layer formed as a result. Therefore, the side surface of the light emitting element can be coated with good workability, and the thickness of the coating layer covering the entire surface of the light emitting element is different between the upper surface and the side surface of the light emitting element. Further, by spraying the atomized coating liquid at high speed, the conductive wire connecting the positive and negative electrodes of the light emitting element and the external electrode is deformed,
There was a problem such as disconnection.

In this embodiment, an apparatus is used in which the coating liquid and gas (air in this embodiment) are ejected in a spiral shape through the nozzle 201. There are several gas outlets around the nozzle of this device.
The ejection direction of the gas ejected from these ejection ports is set at a certain angle with respect to the surface to be coated. Therefore, when gas is simultaneously sent to those gas jets rotating around the jet of the coating liquid, the flow of the entire gas collected from the jets is a spiral flow, It will be a spiral flow, or an upside-down flow of air in a tornado.
In addition, a spray port for the coating liquid is provided at the center of the nozzle of this device, and when the coating liquid is jetted at the same time as the gas is jetted, the atomized coating liquid causes a spiral flow or air in a tornado. The gas flows as if it had been turned upside down and diffuses.

The diameter of the entire spray diffused in a spiral shape increases as it approaches the surface of the light emitting element from the injection start point above the light emitting element. Further, the rotation speed of the spray made of the coating liquid decreases as it approaches the surface of the light emitting element from the injection start point above the light emitting element. That is, when the atomized coating liquid is ejected from the nozzle and diffused in the air, the spray spreads in a conical shape in the vicinity of the nozzle, which is the injection start point, but the spray spreads in a columnar shape away from the nozzle. Therefore, in this embodiment, it is preferable to adjust the distance from the upper surface of the light emitting element to the lower end of the nozzle so that the surface of the light emitting element comes to the place where the spray spreads in a cylindrical shape. At this time, the spray is
Since it is spirally rotated and the speed is weakened, it wraps around the surface of the light emitting element behind the conductive wire and is sufficiently sprayed not only on the entire upper surface of the light emitting element but also on the entire side surface. Thereby, the work can be performed with the light emitting element or the nozzle fixed. In addition, since the spray speed is weakened in a state where the spray spreads in a columnar shape, when the spray is sprayed on the surface of the light emitting element, the phosphor particles contained in the spray may impact the surface of the light emitting element. Absent. Further, the yield is improved without the conductive wire being deformed or broken.

This improves workability and si
The entire surface of the light emitting device, that is, the upper surface, side faces and corners of the light emitting device can be covered with the same film thickness by the coating layer in which the phosphor is bound by O ₂ . [Heater 205] In the present embodiment, as shown in FIG. 4, the light emitting element is heated at a temperature of 50 ° C. or higher and 300 ° C. or lower on the heater 205 in order to blow off the ethanol and the solvent at the moment when the coating liquid is sprayed. It is desirable to be applied under conditions. As a result, the coating liquid does not flow out from the top surface, side surfaces and corners of the light emitting element, and further from where it is sprayed onto the surface of the support, and the coating liquid does not flow out from the top surface, side surfaces and corners of the light emitting element, and the surface of the support Can be attached to. Therefore, SiO ₂
The coating layer formed by binding the phosphor can cover the upper surface, the side surface, and the corners of the light emitting device.

[0059]

EXAMPLES Examples of the present invention will be described below.
Needless to say, the present invention is not limited to the specific examples. (Example 1) In an LED chip, TMG (trimethylgallium) gas, TMI (trimethylindium) gas, nitrogen gas and dopant gas were made to flow together with a carrier gas on a cleaned sapphire substrate, and a gallium nitride-based compound semiconductor was formed by MOCVD. Was formed by forming a film. By switching between SiH ₄ and Cp ₂ Mg as a dopant gas, a gallium nitride semiconductor having N-type conductivity and a gallium nitride semiconductor having P-type conductivity are formed to form a PN junction. As a semiconductor light emitting device,
A contact layer which is a gallium nitride semiconductor having N-type conductivity, a clad layer which is a gallium aluminum nitride semiconductor having P-type conductivity, and a contact layer which is a gallium nitride semiconductor having P-type conductivity are formed. An active layer of non-doped InGaN having a single quantum well structure and having a thickness of about 3 nm was formed between the contact layer having N-type conductivity and the clad layer having P-type conductivity. (Note that a gallium nitride semiconductor is formed as a buffer layer on a sapphire substrate at a low temperature. Further, a semiconductor having P-type conductivity is annealed at 400 ° C. or higher after film formation.) Sapphire by etching After exposing the surface of each PN semiconductor on the substrate, each electrode was formed by sputtering. After the scribe line was drawn on the semiconductor wafer thus formed, it was divided by an external force to form a 350 μm square LED chip as a light emitting element.

On the other hand, a chip type LED package was formed by insert molding using a polycarbonate resin. The inside of the chip type LED package is LE
It has an opening in which the D chip is arranged. A silver-plated copper plate is arranged as an external electrode in the package. The LED chip is fixed inside the package using epoxy resin or the like. LE is a conductive wire
Each electrode of the D chip and each external electrode provided on the package are wire-bonded and electrically connected. In this way, 8280 packages in which the LED chips were arranged were formed. A resist film is formed on the surface of each package except the opening. A package with 8280 LED chips is placed in a container with pure electrolyte.

On the other hand, as the phosphor, a solution obtained by dissolving rare earth elements of Y, Gd and Ce in an acid at a stoichiometric ratio was coprecipitated with oxalic acid. The coprecipitated oxide obtained by firing this is mixed with aluminum oxide to obtain a mixed raw material. Ammonium fluoride was mixed with this as a flux, packed in a crucible, and baked in air at a temperature of 1400 ° C for 3 hours to obtain a baked product.
The fired product is ball in water, washed, separated, dried, and finally through a sieve _{(Y 0. 8 Gd 0.2) 3} Al 5 O 12: to form a Ce phosphor.

Next, Si, Al, Ga, Ti, Ge,
The phosphor is bound with an inorganic substance which is an oxide containing one or more of P, B and alkaline earth elements. In the present embodiment, a commonly used SiO ₂ is used to bind a phosphor, and a coating layer formed by binding the phosphor with SiO _{2 is} provided on the surface of the light emitting device and a support other than the surface of the light emitting device. Formed as a coating layer on top.

The coating layer in which the phosphor is bound by SiO ₂ is a coating in which the phosphor (powder) is uniformly dispersed in silica sol which is a mixture of an alkyl silicate and a high boiling point organic solvent in a predetermined ratio. The solution is prepared, and the silica sol in which the phosphor is dispersed is spray-coated so as to cover the entire surface of the light emitting element mounted in the package and wire-bonded, and then the SiO ₂ component is fixed.

2 and 4, the method of forming the coating layer in which the phosphor is bound by SiO ₂ by spray coating according to the present invention will be described step by step using ethyl silicate as an example. explain.

Step 1. Methyl as an alkyl silicate
Silicate, ethyl silicate, N-propyl silicate
, N-butyl silicate, can be used, but this example
Then SiO _TwoShrink ethyl silicate containing 40 wt%
A combined colorless and transparent oligomer liquid is used. Also,
Ethyl silicate reacts with water in the presence of catalyst beforehand
The one that has undergone hydrolysis reaction is used.

First, a mixed solution of a hydrolyzed solution of ethyl silicate, ethylene glycol and a phosphor in a weight ratio of 1: 1: 1 was prepared and stirred so that the phosphor was uniformly dispersed in the coating liquid. The coating liquid was adjusted. Here, since ethyl silicate is easy to dry and gel, butanol,
High boiling point such as ethylene glycol (100 ℃ ~ 200
It is preferable to mix it with an organic solvent (° C.). When mixed with a high-boiling point organic solvent in this way, the dried ethyl silicate gel is prevented from adhering to the tip of the nozzle, etc., and obstructing the jetting of the coating liquid, thereby preventing a decrease in the amount of the coating liquid jetted. The workability can be improved.

Step 2. Put the coating solution in the container 301,
The coating liquid is discharged from the container to the nozzle 20 by the circulation pump 303.
Transport to 1. The flow rate of the coating liquid is adjusted by the valve 302.

Here, when the atomized coating liquid is ejected from the nozzle 201, the spray spreads in a conical shape in the vicinity of the nozzle, but the spray spreads in a cylindrical shape at a position away from the nozzle.
Therefore, in this embodiment, the distance from the upper surface of the light emitting element to the lower end of the nozzle is 40 to 50 mm, and the surface of the light emitting element is installed so that the spray is spread in a cylindrical shape.

As shown in FIG. 2, the coating liquid and the gas are repeatedly sprayed onto the upper surface, side faces and corners of the light emitting element, and further onto the surface of the support until the desired film thickness is reached, thereby depositing the coating liquid. Here, the desired film thickness means the thickness of the coating layer to such an extent that the light contained in the coating layer converts the wavelength of the light emitted from the LED and the phosphor particles do not reduce the light transmittance. Say.

Further, since the ethanol and the solvent generated by the hydrolysis of ethyl silicate are blown off at the moment when the coating liquid is sprayed, the light emitting element may be heated on the heater at a temperature of 50 ° C. or higher and 300 ° C. or lower. desirable. As a result, the coating liquid does not flow out after being sprayed on the upper surface, side surfaces and corners of the light emitting element and further on the surface of the support, and the coating layer formed by binding the phosphor by SiO ₂ is formed on the upper surface, side surfaces and corners of the light emitting element. Further, it can be formed on the surface of the support.

By performing this spray coating, the upper surface, side surfaces and corners of the light emitting element can be covered with the coating layer in which the phosphor is bound by SiO ₂ in a state where the phosphor is uniformly dispersed.

Step 3. After performing step 2, leave at room temperature. At this time, ethyl silicate reacts with moisture in the air to decompose into SiO ₂ and ethanol. Therefore,
On the surface of the light emitting device, a coating layer formed by binding a phosphor with SiO ₂ is formed.

Step 4. SiO on the surface_TwoCauses the phosphor to
A light emitting device having a coating layer formed in India
By drying at a temperature of 300 ° C. for 2 hours.
Ethanol produced during hydrolysis of tilsilicate,
And the solvent is completely evaporated, _TwoDue to the phosphor
The bound coating layer is fixed on the surface of the light emitting device.
To wear. Here, the nitride-based light emitting device has a temperature of 350 ° C. or higher.
The performance as a light emitting device deteriorates when it is exposed to temperature.
Therefore, it is possible to adhere to the surface of the light emitting element at a temperature of 300 ° C.
Useful alkyl silicates as phosphor binders
Suitable for

Through the above steps, a coating layer containing a phosphor in a uniformly dispersed state and having a layer thickness of about 20 μm is formed on the upper surface, side surfaces and corners of the light emitting device.

[0075] Here, in the present embodiment, the content of the phosphor contained in the coating layer in which the phosphor by SiO ₂ is bound through the coating layer phosphor by SiO ₂ is bound output So that the emitted light is substantially only white light whose wavelength is converted by the phosphor 71, that is, most of the blue light emitted by the light emitting element is absorbed by the phosphor and excites the phosphor. It is preferable to set it relatively large. By doing so, the luminous efficiency (the ratio of the light output to the electric power input to the light emitting element) can be increased.

Further, the amount of the phosphor contained in the coating layer in which the phosphor is bound by SiO ₂ is set to various values in accordance with the desired color tone. Although not limited by the content, according to the study by the present inventors, the coating layer formed by binding the phosphor with SiO ₂ contains a small amount of the phosphor, and thus the coating strength on the surface of the light emitting device. It has been confirmed that the strength becomes stronger and it becomes harder to crack.

In the light emitting device of the first embodiment configured as described above, the coating layer formed by binding the phosphor with SiO ₂ which is an inorganic material and hardly deteriorated by ultraviolet rays is formed on the entire surface of the light emitting element. Therefore, it is possible to use a light emitting element that emits light in the ultraviolet region as the LED chip.

White light can be emitted by supplying power to the obtained light emitting device. The light emission rate of the light emitting device according to the present invention was 24.0 lm / w. (Example 2) Example 1 was repeated except that a fluororesin (PTFE = polytetrafluoroethylene) was used instead of ethyl silicate to prepare a coating solution to bind the phosphor.
A light emitting device was formed by the same method as in.

The light emitting device of the second embodiment described above has the same performance as that of the first embodiment, and the manufacturing yield is improved as compared with the first embodiment. Example 3 FIG. 3 shows a light emitting device according to this example.

The package 405 is made of metal and has a recess a at the center. Further, the base portion b around the recess has two through holes penetrating in the thickness direction, and the respective through holes are opposed to each other with the recess interposed therebetween. Positive and negative lead electrodes 402 are inserted in the through holes via hard glass as an insulating member 403, respectively.
Further, a light transmissive window portion 407 and a lid 406 made of a metal portion are provided on the main surface side of the metal package, and a contact surface between the metal portion and the metal package 405 is welded, so that the light emitting element in the package is introduced together with nitrogen gas. Etc. are hermetically sealed. The LED chip 401 housed in the recess a is a light emitting element that emits ultraviolet light, and the LED chip 401 and the metal package 405 are adhered using eutectic solder such as Au—Sn.

As shown in FIG. 3, CCA-Blue (chemical formula, Ca ₁₀ (PO ₄ ) ₆ ClBr, activators Mn, E) was first prepared by using Al ₂ O ₃ containing on the light emitting device.
u) A coating layer formed by binding the phosphor 409 was formed, and a coating layer formed by binding the yttrium-aluminum-garnet-based phosphor 408 by SiO ₂ was formed by the same method as in Example 1.

With this structure, the refractive index of the coating layer formed by binding the phosphor with SiO ₂ is A.
Since the refractive index of the coating layer in which the phosphor is bound by l ₂ O ₃ is smaller than that of the coating layer in which the phosphor is bound by Al ₂ O ₃ is smaller than that of the gallium nitride-based compound semiconductor layer. Further, there is an effect that the light extraction efficiency from the light emitting element is increased and the output can be improved.

[0083]

According to the present invention, the light emitting device of the present invention has a coating whose thickness is substantially uniform on the top surface, side surface and corners of the light emitting element. The light emitting device can be made to have no color tone shift when viewed from the observation surface. In addition, a light-emitting device with high yield can be obtained.

[0084]

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a conventional light emitting device shown for comparison with a light emitting device manufactured by a method according to the present invention.

FIG. 2 is a schematic cross-sectional view of a light emitting device manufactured by the method according to the present invention.

FIG. 3 is a schematic cross-sectional view of a light emitting device manufactured by the method according to the present invention.

FIG. 4 is a schematic view showing a step of forming a light emitting device of the present invention.

FIG. 5 is a schematic view showing an apparatus for forming the light emitting device of the present invention.

[Explanation of symbols]

2, 102 ... Package 3, 103, 401 ... LED chip 4, 104, 402 ... External electrodes 5, 105, 404 ... Conductive wire 6, 106 ... Mold member 11, 111 ... Coating layer on LED chip 12, 112 ... Coating layer on support 201 ... Nozzle 202, 408, 409 ... Phosphor 203 ... Ethyl silicate 204 ... Support 205 ... Heater 300 ... Spray device 301 ... container 302 ... Valve 303 ... Circulation pump 304 ... Stirrer 305 ... Compressor 306 ... Pressure gauge 307, 308, 309 ... Transport pipe 403 ... Insulating member 405 ... Metal package 406 ... Lid 407 ... Window a ... recess b ... Base

Claims (3)

[Claims] 1. A light-emitting element disposed on a support, a phosphor that absorbs at least a part of light emitted from the light-emitting element and converts the wavelength to emit light, and a phosphor having the phosphor and from the surface of the support. A method for manufacturing a light emitting device having a coating layer covering the entire surface of the light emitting element, wherein the light emitting element arranged on the support is heated,
A method for manufacturing a light-emitting device, comprising spraying the coating liquid containing the phosphor from above the light-emitting element while rotating the coating solution in a mist and spiral shape. 2. The method for manufacturing a light emitting device according to claim 1, wherein the diameter of the spiral shape increases from an injection start point above the light emitting element toward a surface of the light emitting element. 3. The manufacturing of the light emitting device according to claim 1, wherein the rotation speed of the coating liquid decreases from the injection start point above the light emitting element toward the surface of the light emitting element. Method.