KR101121732B1 - Light emitting diode and method of manufacturing the same - Google Patents
Light emitting diode and method of manufacturing the same Download PDFInfo
- Publication number
- KR101121732B1 KR101121732B1 KR1020040110462A KR20040110462A KR101121732B1 KR 101121732 B1 KR101121732 B1 KR 101121732B1 KR 1020040110462 A KR1020040110462 A KR 1020040110462A KR 20040110462 A KR20040110462 A KR 20040110462A KR 101121732 B1 KR101121732 B1 KR 101121732B1
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- KR
- South Korea
- Prior art keywords
- light emitting
- emitting chip
- fluorescent material
- phosphor
- solvent
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
The present invention relates to a light emitting diode and a method of manufacturing the same. A light emitting diode comprising: providing a light emitting diode, a substrate on which a light emitting chip is mounted, a fluorescent material mixed with a phosphor, a resin, and a solvent; and spraying the fluorescent material in the form of fine particles on the light emitting chip. It provides a method for producing.
Therefore, the fluorescent material mixed with the phosphor, the resin and the solvent is granulated through a predetermined sprayer and sprayed onto the light emitting chip, so that the phosphor can be uniformly applied around the light emitting chip, and the solvent of the sprayed particles can evaporate instantly. Therefore, the process of curing the fluorescent material can be shortened, and the amount of the fluorescent material can be reduced since it can be uniformly applied around the light emitting chip with only a small amount of phosphor.
Light Emitting Diode, Phosphor, Phosphor, Resin, Solvent, Spray, Sprayer
Description
1 and 2 are conceptual diagrams for explaining the conventional phosphor coating.
3 to 6 are conceptual diagrams for explaining the application of the phosphor according to the present invention.
7 and 8 are light emitting diodes according to the present invention.
9 is a flowchart illustrating a method of manufacturing a light emitting diode according to the present invention.
<Explanation of symbols for the main parts of the drawings>
10, 110:
30, 130:
132: reflection cup 135: wire
140: molding part 200: sprayer
The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly to a method of applying a phosphor formed on the light emitting chip.
In general, a method of manufacturing a white light emitting diode uses a method of obtaining white light by mounting red, green, and blue light emitting chips, which are three primary colors of light, in one package and then emitting light at the same time. However, since the current voltage characteristics of the red, green, and blue light emitting diodes are different, separate control is required outside each light emitting diode in order to obtain uniform white.
In order to solve this problem, recently, InGaN and GaN-based light emitting chips are mounted on a substrate, and then, a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light is formed on the light emitting chip. The method of obtaining white light by mixing light is used.
1 and 2 are conceptual diagrams for explaining a conventional phosphor coating.
1 and 2, a
Since the
Therefore, in order to solve the above problems, the present invention provides a light emitting diode capable of uniformly applying a fluorescent material around the light emitting chip by spraying a fluorescent material into particles and spraying the light emitting chip, and also reducing the amount of phosphor applied. Its purpose is to provide a method.
According to an embodiment of the present invention; A light emitting chip mounted on the substrate; And a fluorescent material uniformly formed throughout the light emitting chip.
The substrate is preferably made of a material having excellent thermal or electrical conductivity.
The fluorescent material preferably includes a phosphor and a resin.
The fluorescent substance including the phosphor and the resin is preferably a substance remaining after evaporation of the solvent among the substances including the phosphor, the resin, and the solvent.
The solvent is preferably at least one selected from the group consisting of petroleum light oil, alcohol, toluene, ether, acetone and halogenated hydrocarbons.
In addition, the light emitting diode according to an embodiment of the present invention preferably further includes a molding part encapsulating a light emitting chip in which the fluorescent material is uniformly formed.
On the other hand, according to another embodiment of the present invention comprising the steps of preparing a substrate on which the light emitting chip is mounted, and a fluorescent material mixed with a phosphor, a resin and a solvent; And spraying the fluorescent material in the form of particles on the light emitting chip as a whole.
Providing a substrate on which the light emitting chip is mounted, and a phosphor mixed with a phosphor, a resin, and a solvent may include preparing the substrate on which a lead terminal is formed; Mounting the light emitting chip on the substrate; And it is preferable to include a step of preparing a fluorescent material by mixing the phosphor, a resin and a solvent.
Spraying the fluorescent material in the form of particles throughout the light emitting chip, the step of injecting the fluorescent material into the spray; Granulating a fluorescent substance through the nebulizer; And spraying the granulated fluorescent material on the light emitting chip.
In addition, the light emitting diode manufacturing method according to another embodiment of the present invention preferably further comprises the step of evaporating the fluorescent material in the form of particles throughout the light emitting chip, the solvent contained in the fluorescent material is further evaporated. Do.
In addition, the light emitting diode manufacturing method according to another embodiment of the present invention preferably further comprises the step of forming a molding unit for encapsulating the light emitting chip after the step of evaporating the solvent contained in the fluorescent material.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like numbers refer to like elements in the figures.
As the fluorescent substance in the present embodiment, a substance in which a predetermined solvent is mixed with a mixture of a phosphor and a predetermined resin is used.
As the phosphor, a phosphor capable of converting the wavelength of light emitted by the light emitting chip is used. In the present embodiment, a phosphor capable of converting the wavelength of light emitted by the light emitting chip into white is used. As the resin, when the phosphor is applied to the lower light emitting chip region, a material capable of bonding between the phosphor and the light emitting chip is used. In this embodiment, an epoxy resin or a silicone resin is used. As a solvent, a substance for liquefying a phosphor and a resin to be easily sprayed through a sprayer is used, but in this embodiment, a material having high solubility, high selectivity, and excellent recoverability, petroleum light oil, alcohol, Toluene, ether, acetone, halogenated hydrocarbons and the like. As described above, the present invention mixes a predetermined solvent in the mixture of the phosphor and the resin, and first adjusts the viscosity of the phosphor to facilitate the granulation of the phosphor through a subsequent sprayer, and then, after potting the conventional phosphor The curing process is omitted. This is due to the nature of the material is sprayed with the fluorescent material particles are sprayed around the light emitting chip is the instant evaporation of the instant it is possible to instant curing. In addition, the solvent is mixed to increase the mixing ratio of the phosphor.
3 to 6 are conceptual diagrams for explaining the application of the phosphor according to the present invention.
As shown in FIG. 3, the
As described above, when the liquid phase having a predetermined viscosity is sprayed around the
This is because the phosphor material ported on the conventional light emitting chip (see '20' of FIG. 2) is a liquid mass, but the phosphor material sprayed on the
In order to further improve the effect of such spraying, as shown in FIG. 5, the
As shown in FIG. 5, the
The present invention is not limited to the above embodiment, and when the
Hereinafter, a light emitting diode according to the above-described fluorescent substance and its spraying method and a method of manufacturing the same will be described.
7 and 8 are light emitting diodes according to the present invention.
Referring to FIG. 7, the light emitting diode includes a
To this end, the blue
Referring to FIG. 8, the light emitting diode is sprayed in the form of particles around the
At this time, the
9 is a flowchart illustrating a method of manufacturing a light emitting diode according to the present invention.
Referring to FIG. 9, a light emitting chip is mounted on a substrate on which a lead terminal is formed (S10). After applying a predetermined paste on the substrate, the light emitting chip is mounted. At this time, the light emitting chip is mounted on the substrate, or mounted on one side lead terminal formed on the substrate. Thereafter, the light emitting chip and the lead terminal are electrically connected through a predetermined wiring process. On the other hand, the fluorescent material is generated by mixing the phosphor, resin and solvent in a predetermined container (S20). During the mixing of the phosphor and the resin, a solvent is added to adjust the viscosity of the mixture. That is, for example, yttrium, aluminum, and garnet-based phosphors (YAG phosphors) are mixed with a transparent epoxy resin at a fixed ratio, and a solvent is added thereto.
Thereafter, the fluorescent material is sprayed onto the light emitting chip in the form of particles (S30). The phosphor mixed with the phosphor, the resin, and the solvent is injected into the sprayer, and then the phosphor is granulated (fog) and sprayed around the light emitting chip through the sprayer. Since the granulated fluorescent material has a predetermined viscosity, phosphors can be uniformly distributed around the light emitting chip, and the curing material is instantaneously cured or the curing process time is shortened because the fluorescent material is sprayed on the light emitting chip and the solvent evaporates. do.
A molding part for encapsulating the light emitting chip is formed (S40). The molding part uses a transparent epoxy resin to cover the light emitting chip and a predetermined terminal electrode connected to the substrate so as to be blocked from the outside. Thereafter, a predetermined curing process is performed for 30 minutes to 2 hours (S50).
This forms a light emitting diode in which a predetermined fluorescent substance is uniformly coated on the light emitting chip.
As described above, the present invention can adjust the viscosity of the fluorescent material by mixing a predetermined solvent in the mixture of the phosphor and the resin.
In addition, by spraying a fluorescent material mixed with a phosphor, a resin and a solvent into a small particle through a predetermined sprayer and spraying the light emitting chip, the phosphor can be uniformly applied around the light emitting chip, and the solvent of the sprayed particles is evaporated instantly. Therefore, the process of curing the fluorescent substance can be shortened.
In addition, since only a small amount of phosphor can be uniformly applied around the light emitting chip, the amount of phosphor used can be reduced.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020040110462A KR101121732B1 (en) | 2004-12-22 | 2004-12-22 | Light emitting diode and method of manufacturing the same |
Applications Claiming Priority (1)
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KR1020040110462A KR101121732B1 (en) | 2004-12-22 | 2004-12-22 | Light emitting diode and method of manufacturing the same |
Publications (2)
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KR20060071958A KR20060071958A (en) | 2006-06-27 |
KR101121732B1 true KR101121732B1 (en) | 2012-03-23 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100900291B1 (en) * | 2007-01-19 | 2009-05-29 | 엘지전자 주식회사 | LED package and method for manufacturing the same |
KR100849782B1 (en) * | 2007-02-12 | 2008-07-31 | 삼성전기주식회사 | Method for manufacturing led package |
KR101365624B1 (en) * | 2007-06-20 | 2014-02-21 | 서울반도체 주식회사 | Light emitting diode having phosphor thin film and method for manufacturing the same |
KR100927272B1 (en) * | 2008-10-23 | 2009-11-18 | 창원대학교 산학협력단 | A led package and a manufacturing method |
CN102097425A (en) | 2009-12-09 | 2011-06-15 | 三星Led株式会社 | Light emitting diode, method for fabricating phosphor layer, and lighting apparatus |
KR101253586B1 (en) | 2010-08-25 | 2013-04-11 | 삼성전자주식회사 | Phosphor film, method of manufacturing the same, method of coating phosphor layer on an LED chip, method of manufacturing LED package and LED package manufactured thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203989A (en) | 2000-12-21 | 2002-07-19 | Lumileds Lighting Us Llc | Light emitting device and its manufacturing method |
JP2003115614A (en) * | 2001-10-03 | 2003-04-18 | Nichia Chem Ind Ltd | Method of fabricating light emitting device |
JP2003298116A (en) | 2002-03-29 | 2003-10-17 | Stanley Electric Co Ltd | White light emitting diode and method of manufacturing the same |
KR200362813Y1 (en) | 2004-06-22 | 2004-09-23 | 쉰-룽 리우 | Improved structure of light-emitting diode |
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2004
- 2004-12-22 KR KR1020040110462A patent/KR101121732B1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002203989A (en) | 2000-12-21 | 2002-07-19 | Lumileds Lighting Us Llc | Light emitting device and its manufacturing method |
JP2003115614A (en) * | 2001-10-03 | 2003-04-18 | Nichia Chem Ind Ltd | Method of fabricating light emitting device |
JP2003298116A (en) | 2002-03-29 | 2003-10-17 | Stanley Electric Co Ltd | White light emitting diode and method of manufacturing the same |
KR200362813Y1 (en) | 2004-06-22 | 2004-09-23 | 쉰-룽 리우 | Improved structure of light-emitting diode |
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