JP2003115596A5 - - Google Patents
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- Publication number
- JP2003115596A5 JP2003115596A5 JP2002198186A JP2002198186A JP2003115596A5 JP 2003115596 A5 JP2003115596 A5 JP 2003115596A5 JP 2002198186 A JP2002198186 A JP 2002198186A JP 2002198186 A JP2002198186 A JP 2002198186A JP 2003115596 A5 JP2003115596 A5 JP 2003115596A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002198186A JP4100071B2 (ja) | 2001-08-02 | 2002-07-08 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001234320 | 2001-08-02 | ||
| JP2001-234320 | 2001-08-02 | ||
| JP2002198186A JP4100071B2 (ja) | 2001-08-02 | 2002-07-08 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003115596A JP2003115596A (ja) | 2003-04-18 |
| JP2003115596A5 true JP2003115596A5 (enExample) | 2006-02-09 |
| JP4100071B2 JP4100071B2 (ja) | 2008-06-11 |
Family
ID=26619806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002198186A Expired - Fee Related JP4100071B2 (ja) | 2001-08-02 | 2002-07-08 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4100071B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4687024B2 (ja) * | 2004-03-02 | 2011-05-25 | 富士電機システムズ株式会社 | 半導体装置 |
| US7696598B2 (en) * | 2005-12-27 | 2010-04-13 | Qspeed Semiconductor Inc. | Ultrafast recovery diode |
| CN101361194B (zh) * | 2005-12-27 | 2010-12-22 | 美商科斯德半导体股份有限公司 | 用于快速恢复整流器结构的装置及方法 |
| JP5083885B2 (ja) * | 2007-11-20 | 2012-11-28 | 日本インター株式会社 | Ｊｂｓおよびｍｏｓｆｅｔ |
| JP2015072988A (ja) * | 2013-10-02 | 2015-04-16 | サンケン電気株式会社 | 半導体装置 |
| JP7456902B2 (ja) | 2020-09-17 | 2024-03-27 | 株式会社東芝 | 半導体装置 |
| CN113193053B (zh) * | 2021-05-20 | 2023-11-07 | 电子科技大学 | 一种具有高正向电流密度的沟槽肖特基二极管 |
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2002
- 2002-07-08 JP JP2002198186A patent/JP4100071B2/ja not_active Expired - Fee Related