JP2003113433A5 - - Google Patents

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Publication number
JP2003113433A5
JP2003113433A5 JP2001307336A JP2001307336A JP2003113433A5 JP 2003113433 A5 JP2003113433 A5 JP 2003113433A5 JP 2001307336 A JP2001307336 A JP 2001307336A JP 2001307336 A JP2001307336 A JP 2001307336A JP 2003113433 A5 JP2003113433 A5 JP 2003113433A5
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Japan
Prior art keywords
film
alloy
target material
low
resistance
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JP2001307336A
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Japanese (ja)
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JP2003113433A (en
JP3778425B2 (en
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Priority to JP2001307336A priority Critical patent/JP3778425B2/en
Priority claimed from JP2001307336A external-priority patent/JP3778425B2/en
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Publication of JP2003113433A5 publication Critical patent/JP2003113433A5/ja
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Description

しかしながら、Al合金により形成した金属膜であっても、今後の大型ディスプレイ、携帯機器用ディスプレイ等で要求されるさらなる高精細化、動画に対応した高速応答性の向上実現する為には十分とは言えない。加えて、既述のようにAl合金により低抵抗な配線膜を得るには加熱処理が必要であり、樹脂基板や樹脂フィルム等を用いた場合に十分な加熱処理を行なえないため、低抵抗を得難いという欠点も有している。そのため、Al合金に替えてさらに低抵抗であるAgの適用が検討されている。
また、Agは反射率においてもAlよりも優れる。近年、液晶ディスプレイには低消費電力と表示品質向上のため、反射膜にはペーパーホワイトと呼ばれる高い反射と可視光域でフラットな反射特性が求められており、反射膜の用途においても反射率に優れるAgの適用が検討されている。
However, even if it is a metal film formed of Al alloy, it is sufficient to realize further high definition and high-speed response improvement corresponding to moving images required for future large displays, displays for portable devices, etc. I can not say. In addition, as described above, heat treatment is required to obtain a low resistance wiring film from Al alloy, and sufficient heat treatment can not be performed when a resin substrate, a resin film, or the like is used. It also has the disadvantage of being difficult to obtain. Therefore, application of Ag, which has a further low resistance, in place of the Al alloy is being studied.
In addition, Ag is superior to Al also in reflectance. In recent years, liquid crystal displays are required to have high reflection called paper white and flat reflection characteristics in the visible light region for low power consumption and improvement in display quality, and also in the application of the reflection film Application of superior Ag is being considered.

【0007】
【発明が解決しようとする課題】
上述のようにAgにより形成した金属膜は、反射、比抵抗ともAlやAl合金より良好な特性を有するものの、基板に対する密着性が低く、応力に起因するヒロックの発生、さらに耐熱性、耐食性が低いという欠点を有する。
例えば、AgをFPDの配線膜あるいは反射膜として用いた場合、基板であるガラスや樹脂基板、樹脂フィルム、耐食性の高い金属箔、例えばステンレス箔等に対して膜の密着性が低く、プロセス中に剥がれが生じるという問題を生じる。
[0007]
[Problems to be solved by the invention]
Metal film formed by Ag as described above, reflectance, but have better characteristics than with the specific resistance Al and Al alloy, the adhesion to the substrate is low, generation of hillocks due to stress, further heat resistance, corrosion resistance Has the disadvantage of being low.
For example, when Ag is used as a wiring film or reflective film of FPD, the adhesion of the film to glass, resin substrate, resin film, metal foil having high corrosion resistance such as stainless steel foil is low during the process. It causes a problem that peeling occurs.

ターゲット材の製造方法については種々あるが、一般にターゲット材に要求される高純度、均一組織、高密度等を達成できるものであれば良い。例えば、真空溶解法により所定の組織に調整した後、金属製の鋳型に鋳込み、さらにその後、鍛造、圧延等により板状に加工し、機械加工により所定の形状のターゲットに仕上げることで製造できる。 There are various methods for producing the target material, but any method can be used as long as high purity, uniform texture, high density, etc. required for the target material can be generally achieved. For example, after adjusting to a predetermined structure by a vacuum melting method, it can be cast into a metal mold, and then processed into a plate shape by forging, rolling or the like, and finished into a target of a predetermined shape by machining.

【0025】
【実施例】
電子部品用金属膜であるAg合金膜の目標組成と実質的に同一となるように真空溶解法でインゴットを作製し、冷間圧延にて板状に加工した後ターゲット材を作製し、機械加工により直径100mm、厚さ5mmのターゲット材を作製した。そのターゲット材を用いてスパッタリングにより、ガラス基板またはSiウェハー上に膜厚200nmの電子部品用金属膜であるAg合金膜を形成し、膜特性として、比抵抗は4端子法、反射率は光学反射率計を用いて測定した。
[0025]
【Example】
An ingot is produced by vacuum melting method so that it becomes substantially the same as the target composition of the Ag alloy film which is a metal film for electronic parts, and after processing into a plate by cold rolling, a target material is produced and machined Thus, a target material having a diameter of 100 mm and a thickness of 5 mm was produced. An Ag alloy film, which is a metal film for electronic components with a film thickness of 200 nm, is formed on a glass substrate or Si wafer by sputtering using the target material, and as a film characteristic, a specific resistance is a four-terminal method and a reflectance is an optical reflection. It measured using a rate meter.

JP2001307336A 2001-10-03 2001-10-03 Ag alloy film for electronic parts used for display device and sputtering target material for forming Ag alloy film for electronic parts used for display device Expired - Fee Related JP3778425B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001307336A JP3778425B2 (en) 2001-10-03 2001-10-03 Ag alloy film for electronic parts used for display device and sputtering target material for forming Ag alloy film for electronic parts used for display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001307336A JP3778425B2 (en) 2001-10-03 2001-10-03 Ag alloy film for electronic parts used for display device and sputtering target material for forming Ag alloy film for electronic parts used for display device

Publications (3)

Publication Number Publication Date
JP2003113433A JP2003113433A (en) 2003-04-18
JP2003113433A5 true JP2003113433A5 (en) 2005-06-16
JP3778425B2 JP3778425B2 (en) 2006-05-24

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JP2001307336A Expired - Fee Related JP3778425B2 (en) 2001-10-03 2001-10-03 Ag alloy film for electronic parts used for display device and sputtering target material for forming Ag alloy film for electronic parts used for display device

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JP (1) JP3778425B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4384453B2 (en) 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ag-based sputtering target and manufacturing method thereof
US7575714B2 (en) * 2003-12-10 2009-08-18 Tanaka Kikinzoku Kogyo K.K. Silver alloy excellent in reflectance maintenance property and method for producing an optical recording medium
KR100731739B1 (en) * 2005-04-28 2007-06-22 삼성에스디아이 주식회사 Organic Electroluminescence Display Device and Fabrication Method of the same
JP4868821B2 (en) * 2005-10-21 2012-02-01 京セラ株式会社 Gallium nitride compound semiconductor and light emitting device
JP5287028B2 (en) * 2008-08-20 2013-09-11 三菱マテリアル株式会社 Ag alloy sputtering target for forming translucent reflective film of optical recording medium

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61133349A (en) * 1984-12-03 1986-06-20 Hitachi Ltd Alloy capable of varying spectral reflectance and recording material
JP2541677B2 (en) * 1989-08-09 1996-10-09 帝人株式会社 Optical recording medium
JP3365762B2 (en) * 2000-04-28 2003-01-14 株式会社神戸製鋼所 Reflective layer or translucent reflective layer for optical information recording medium, optical information recording medium, and sputtering target for optical information recording medium
JP2003034828A (en) * 2001-02-15 2003-02-07 Kobe Steel Ltd Ag ALLOY FILM FOR SHIELDING ELECTROMAGNETIC WAVE, BODY HAVING Ag ALLOY FILM FOR SHIELDING ELECTROMAGNETIC WAVE, AND SPUTTERING TARGET OF Ag ALLOY FOR SHIELDING ELECTROMAGNETIC WAVE
JP4047591B2 (en) * 2001-02-21 2008-02-13 株式会社神戸製鋼所 Light reflection film, reflection type liquid crystal display element, and sputtering target for light reflection film
JP2002319185A (en) * 2001-04-23 2002-10-31 Sumitomo Metal Mining Co Ltd Silver alloy for reflection film for optical recording disk

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