JP2003112999A5 - - Google Patents

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JP2003112999A5
JP2003112999A5 JP2001307452A JP2001307452A JP2003112999A5 JP 2003112999 A5 JP2003112999 A5 JP 2003112999A5 JP 2001307452 A JP2001307452 A JP 2001307452A JP 2001307452 A JP2001307452 A JP 2001307452A JP 2003112999 A5 JP2003112999 A5 JP 2003112999A5
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Japan
Prior art keywords
substrate
multilayer film
wurtzite
semiconductor
semiconductor multilayer
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JP2001307452A
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Japanese (ja)
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JP4031628B2 (en
JP2003112999A (en
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Priority claimed from JP2001307452A external-priority patent/JP4031628B2/en
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Publication of JP2003112999A5 publication Critical patent/JP2003112999A5/ja
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Claims (7)

ウルツァイト基板および前記ウルツァイト基板上に成長した半導体多層膜よりなり、前記ウルツァイト基板の表面は（１０−１２）面である、半導体結晶。  A semiconductor crystal comprising a wurtzite substrate and a semiconductor multilayer film grown on the wurtzite substrate, the surface of the wurtzite substrate being a (10-12) plane. ウルツァイト基板の表面が（１０−１２）面から＜１−２１０＞方向に±１０度以内の角度範囲内で傾斜している、請求項１に記載の半導体結晶。  2. The semiconductor crystal according to claim 1, wherein the surface of the wurtzite substrate is inclined within an angle range of ± 10 degrees in the <1-210> direction from the (10-12) plane. 前記ウルツァイト基板が窒化ガリウム基板であり、該窒化ガリウム基板上に成長した半導体多層膜がIII族窒化物半導体多層膜よりなる、請求項１または請求項２のいずれかに記載の半導体結晶。  3. The semiconductor crystal according to claim 1, wherein the wurzeite substrate is a gallium nitride substrate, and the semiconductor multilayer film grown on the gallium nitride substrate is a group III nitride semiconductor multilayer film. 前記ウルツァイト基板が炭化珪素基板であり、該炭化珪素基板上に成長した半導体多層膜がIII族窒化物半導体多層膜よりなる、請求項１または請求項２のいずれかに記載の半導体結晶。  3. The semiconductor crystal according to claim 1, wherein the wurzeite substrate is a silicon carbide substrate, and the semiconductor multilayer film grown on the silicon carbide substrate is formed of a group III nitride semiconductor multilayer film. 請求項３に記載の半導体結晶で構成されている、発光素子。  The light emitting element comprised with the semiconductor crystal of Claim 3. 請求項４に記載の半導体結晶で構成されている、発光素子。  A light emitting device comprising the semiconductor crystal according to claim 4. ウルツァイト基板を、（０００１）面から＜１０−１０＞方向に５５度の角度に傾斜してなる（１０−１２）面を中心に、４５度から６５度の角度でスライスする工程と、燐酸あるいは硫酸を含む溶液でスライス後の前記ウルツァイト基板表面をエッチングする工程と、前記ウルツァイト基板表面に気相成長法により半導体多層膜を成長する工程とを有する、結晶成長方法。  Slicing a wurtzite substrate at an angle of 45 to 65 degrees around a (10-12) plane inclined at an angle of 55 degrees in the <10-10> direction from the (0001) plane, and phosphoric acid or A crystal growth method, comprising: a step of etching the surface of the wurtzite substrate after slicing with a solution containing sulfuric acid; and a step of growing a semiconductor multilayer film on the surface of the wurtzite substrate by a vapor phase growth method.
JP2001307452A 2001-10-03 2001-10-03 Semiconductor multilayer crystal, light-emitting element using the same, and method for growing the semiconductor multilayer crystal Expired - Fee Related JP4031628B2 (en)

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JP2001307452A JP4031628B2 (en) 2001-10-03 2001-10-03 Semiconductor multilayer crystal, light-emitting element using the same, and method for growing the semiconductor multilayer crystal

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JP2001307452A JP4031628B2 (en) 2001-10-03 2001-10-03 Semiconductor multilayer crystal, light-emitting element using the same, and method for growing the semiconductor multilayer crystal

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JP2003112999A JP2003112999A (en) 2003-04-18
JP2003112999A5 true JP2003112999A5 (en) 2005-06-23
JP4031628B2 JP4031628B2 (en) 2008-01-09

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005104742A (en) * 2003-09-26 2005-04-21 Kyocera Corp Substrate for growing single crystal and semiconductor device
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
US7575947B2 (en) * 2005-09-09 2009-08-18 The Regents Of The University Of California Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
JP2006052123A (en) * 2004-07-12 2006-02-23 Sumitomo Electric Ind Ltd N-TYPE AlN CRYSTAL, N-TYPE AlGaN SOLID SOLUTION, AND METHOD FOR PRODUCING THEM
EP2315253A1 (en) * 2005-03-10 2011-04-27 The Regents of the University of California Technique for the growth of planar semi-polar gallium nitride
JP4277826B2 (en) 2005-06-23 2009-06-10 住友電気工業株式会社 Nitride crystal, nitride crystal substrate, nitride crystal substrate with epi layer, and semiconductor device and method for manufacturing the same
US8771552B2 (en) 2005-06-23 2014-07-08 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
US9708735B2 (en) 2005-06-23 2017-07-18 Sumitomo Electric Industries, Ltd. Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same
JP4518209B1 (en) * 2009-09-07 2010-08-04 住友電気工業株式会社 Group III nitride crystal substrate, group III nitride crystal substrate with epi layer, and semiconductor device and method for manufacturing the same
TWI490918B (en) * 2006-01-20 2015-07-01 Univ California Method for improved growth of semipolar (al,in,ga,b)n
JP5493302B2 (en) * 2007-07-19 2014-05-14 三菱化学株式会社 Group III nitride semiconductor substrate and cleaning method thereof
JP2010539732A (en) * 2007-09-19 2010-12-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Method for increasing the area of nonpolar and semipolar nitride substrates
JP4390007B2 (en) 2008-04-07 2009-12-24 住友電気工業株式会社 Group III nitride semiconductor device and epitaxial wafer
JP2010027924A (en) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Group iii nitride light-emitting diode
JP4730422B2 (en) 2008-10-24 2011-07-20 住友電気工業株式会社 Group III nitride semiconductor electronic device, method of fabricating group III nitride semiconductor electronic device, and group III nitride semiconductor epitaxial wafer
JP4375497B1 (en) * 2009-03-11 2009-12-02 住友電気工業株式会社 Group III nitride semiconductor device, epitaxial substrate, and method of manufacturing group III nitride semiconductor device
JP5120350B2 (en) * 2009-08-24 2013-01-16 住友電気工業株式会社 Group III nitride semiconductor device and epitaxial wafer

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