JP2003100799A - Mounting method of work with bump - Google Patents
Mounting method of work with bumpInfo
- Publication number
- JP2003100799A JP2003100799A JP2002269550A JP2002269550A JP2003100799A JP 2003100799 A JP2003100799 A JP 2003100799A JP 2002269550 A JP2002269550 A JP 2002269550A JP 2002269550 A JP2002269550 A JP 2002269550A JP 2003100799 A JP2003100799 A JP 2003100799A
- Authority
- JP
- Japan
- Prior art keywords
- work
- substrate
- bumps
- bond
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、フリップチップな
どのバンプ付きワークをボンドで基板に接着するバンプ
付きワークの実装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a bumped work such as a flip chip which is bonded to a substrate by a bond.
【0002】[0002]
【従来の技術】フリップチップなどのバンプ付きワーク
を基板に実装する場合、バンプ付きワークのバンプを基
板の電極に位置合わせしてバンプ付きワークを基板に搭
載した後、バンプ付きワークと基板の間にボンドを注入
し、ボンドを硬化させることにより、バンプ付きワーク
を基板に実装することが行われる。ボンドはバンプ付き
ワークを基板にしっかり接着して実装するために注入さ
れるものである。2. Description of the Related Art When mounting a work with bumps such as a flip chip on a substrate, the bumps of the work with bumps are aligned with the electrodes of the substrate and the work with bumps is mounted on the substrate. The work with bumps is mounted on the substrate by injecting a bond into the substrate and curing the bond. The bond is injected to firmly bond and mount the bumped work on the substrate.
【0003】[0003]
【発明が解決しようとする課題】しかしながら上記従来
方法は、ボンドは、バンプ付きワークを基板に搭載した
後、バンプ付きワークと基板の間に注入されていたた
め、注入作業にかなりの時間を要して生産性があがら
ず、また注入不足によりバンプ付きワークと基板の間に
空隙が生じやすく、この空隙によりボンドの接着力が低
下したり、あるいはヒートサイクルによる空隙内の空気
の熱膨張により硬化したボンドが破壊され、さらには空
隙が基板の電極付近に生じると、その空気により電極が
腐食するなどの問題点があった。However, in the above-mentioned conventional method, since the bond is injected between the work having bumps and the substrate after the work having bumps is mounted on the substrate, the injection work requires a considerable time. Productivity is not improved, and due to insufficient injection, voids are likely to occur between the work with bumps and the substrate, and this void reduces the bond strength of the bond or is cured by thermal expansion of air in the void due to heat cycle. When the bond is broken and a void is formed near the electrode on the substrate, the air corrodes the electrode.
【0004】また基板の電極上の半田部を加熱して溶融
固化させることによりバンプは電極に半田付けされてい
たため、半田付けのためにかなりの時間を要し、生産性
があがらないものであった。Further, since the bumps are soldered to the electrodes by heating and melting and solidifying the solder portions on the electrodes of the substrate, it takes a considerable time for soldering and the productivity is not improved. It was
【0005】したがって本発明は、バンプ付きワークを
作業性よく、しかもしっかり基板に実装できるバンプ付
きワークの実装方法を提供することを目的とする。Accordingly, it is an object of the present invention to provide a mounting method for a bumped work which can be mounted on a substrate firmly with good workability.
【0006】[0006]
【課題を解決するための手段】本発明のバンプ付きワー
クの実装方法は、基板の上面にボンドを塗布する工程
と、バンプ付きワークのバンプを前記基板の電極上の半
田部に着地させ、高周波振動を付与することによりバン
プの下端部を半田部にめり込ませて仮接着する工程と、
ボンドを加熱することにより硬化させてバンプ付きワー
クを基板に本接着する工程と、を含む。A method of mounting a work with bumps according to the present invention comprises a step of applying a bond on the upper surface of a substrate and a step of landing the bumps of the work with bumps on a solder portion on an electrode of the substrate, A step of making the lower end of the bump into the solder part by applying vibration and temporarily adhering;
Curing the bond by heating to bond the work with bumps to the substrate.
【0007】また本発明のバンプ付きワークの実装方法
は、基板の上面にボンドを塗布する工程と、バンプ付き
ワークのバンプを前記基板の電極に着地させ、高周波振
動を付与することによりバンプを電極に仮接着する工程
と、ボンドを加熱することにより硬化させてバンプ付き
ワークを基板に本接着する工程と、を含む。Further, the method of mounting a work with bumps according to the present invention comprises a step of applying a bond on the upper surface of the substrate, and the bumps of the work with bumps are landed on the electrodes of the substrate and high-frequency vibration is applied to the bumps to form electrodes. And a step of permanently bonding the work with bumps to the substrate by hardening the bond by heating.
【0008】また好ましくは、基板の上面にボンドを塗
布するのに先立って、基板の上面をプラズマエッチング
する。Also preferably, the top surface of the substrate is plasma etched prior to applying the bond to the top surface of the substrate.
【0009】[0009]
【発明の実施の形態】上記構成の本発明は、バンプ付き
ワークを基板に搭載する前に基板にボンドを塗布するの
で、従来方法のように空隙を生じにくく、信頼性の高い
実装が可能となる。またバンプは高周波振動により半田
部や電極に仮接着されるので、従来方法のように電極上
の半田部を加熱して溶融固化させる必要がなく、それだ
けタクトタイムを短縮して生産性を上げることができ
る。BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention having the above-described structure, since the bond is applied to the substrate before mounting the work with bumps on the substrate, it is possible to realize a highly reliable mounting unlike the conventional method. Become. Also, since the bumps are temporarily bonded to the solder parts and electrodes by high frequency vibration, there is no need to heat and solidify the solder parts on the electrodes as in the conventional method, which shortens the takt time and improves productivity. You can
【0010】また基板の上面にボンドを塗布するのに先
立って、基板の上面をプラズマエッチングすることによ
り、基板の表面を活性化させ、ボンドの基板に対する接
着力を大巾に増大させ、バンプ付きワークを基板により
しっかり実装することができる。Further, prior to applying the bond to the upper surface of the substrate, the upper surface of the substrate is plasma-etched to activate the surface of the substrate, and the adhesive force of the bond to the substrate is greatly increased. The work can be mounted on the board firmly.
【0011】以下、本発明の実施の形態を図面を参照し
て説明する。図1は、本発明の一実施の形態の基板の前
処理工程図、図2は同バンプ付きワークの実装工程図で
ある。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a process diagram of a substrate pretreatment according to an embodiment of the present invention, and FIG. 2 is a process diagram of mounting the work with bumps.
【0012】図1において、基板1の上面には電極2が
形成されている。電極2上には半田部3が形成されてい
る。半田部3は、メッキ法やレベラ法などによりプリコ
ート部として形成されている。この基板1をプラズマ処
理室に収納し、プラズマイオンeをその上面に衝突させ
ることにより、上面をエッチングして活性化させる。以
上のようにして基板1の前処理が終了したならば、基板
1にバンプ付きワークを実装する。次に、バンプ付きワ
ークの実装方法を図2を参照して説明する。In FIG. 1, an electrode 2 is formed on the upper surface of the substrate 1. Solder portions 3 are formed on the electrodes 2. The solder portion 3 is formed as a precoat portion by a plating method, a leveler method, or the like. The substrate 1 is housed in a plasma processing chamber, and the plasma ions e are made to collide with the upper surface of the substrate to etch and activate the upper surface. When the pretreatment of the substrate 1 is completed as described above, the work with bumps is mounted on the substrate 1. Next, a method of mounting a work with bumps will be described with reference to FIG.
【0013】図2(a),(b),(c)は、バンプ付
きワークの実装方法を工程順に示している。まず、図2
(a)に示すように、基板1の上面にボンド塗布器5に
よりボンド4を塗布する。このボンド4は熱硬化性樹脂
であり、好ましくはフィラーが混入される。2A, 2B, and 2C show a method of mounting a bumped work in the order of steps. First, FIG.
As shown in (a), the bond 4 is applied to the upper surface of the substrate 1 by the bond applicator 5. This bond 4 is a thermosetting resin, and preferably a filler is mixed therein.
【0014】次に、図2(b)に示すように、バンプ付
きワーク6を基板1に搭載する。バンプ付きワーク6の
下面にはバンプ7が突設されている。バンプ付きワーク
6は圧着ツール8の下面に真空吸着して保持されてお
り、バンプ7をボンド4にめり込ませて半田部3に着地
させ、基板1に搭載される。そしてバンプ付きワーク6
は圧着ツール8により基板1に押し付けられ(矢印
A)、その押圧力によりバンプ7の下端部は半田部3に
めり込む。なお半田部3は鉛とすずなどの柔かい合金で
あり、またバンプ7は金などの半田部3との接着性のよ
い導電性金属により形成されている。Next, as shown in FIG. 2B, the work 6 with bumps is mounted on the substrate 1. Bumps 7 are provided on the lower surface of the work 6 with bumps. The work 6 with bumps is vacuum-sucked and held on the lower surface of the crimping tool 8, and the bumps 7 are embedded in the bonds 4 to land on the solder portions 3 and mounted on the substrate 1. And work 6 with bump
Is pressed against the substrate 1 by the crimping tool 8 (arrow A), and the lower end of the bump 7 is fitted into the solder part 3 by the pressing force. The solder portion 3 is made of a soft alloy such as lead and tin, and the bump 7 is made of a conductive metal such as gold having good adhesiveness to the solder portion 3.
【0015】バンプ7を半田部3に押し付けてめり込ま
せる際には、圧着ツール8に高周波振動を付与し、圧着
ツール8を横方向に超音波振動させる(矢印B)。する
とバンプ7と半田部3の接合部には金属間接合が進行
し、バンプ7は半田部3に接着される。この接着力は比
較的小さなものであり、したがってこの接着のことを本
発明では仮接着と称する。このように超音波振動させな
がらバンプ付きワーク6を基板1に押し付けると、この
超音波振動によりボンド4も振動してボンド4はバンプ
付きワーク6の下面全面に十分に廻り込み、またボンド
4中の気泡も追い出される。When the bumps 7 are pressed into the solder portion 3 to be embedded therein, high-frequency vibration is applied to the crimping tool 8 to ultrasonically vibrate the crimping tool 8 in the lateral direction (arrow B). Then, the metal-to-metal bonding progresses at the bonding portion between the bump 7 and the solder portion 3, and the bump 7 is bonded to the solder portion 3. This adhesive force is relatively small, and therefore this adhesive is called temporary adhesive in the present invention. When the work 6 with bumps is pressed against the substrate 1 while being ultrasonically vibrated in this way, the bond 4 also vibrates due to this ultrasonic vibration, and the bond 4 sufficiently wraps around the entire lower surface of the work 6 with bumps. Bubbles are also expelled.
【0016】次にバンプ付きワーク6が搭載された基板
1を加熱炉へ送り、ボンド4を加熱して硬化させれば、
バンプ付きワーク6は基板1にしっかり本接着され、実
装は終了する(図2(c))。この場合、基板1の表面
は前処理でプラズマエッチングして活性化されているの
で、ボンド4は基板1に強固に接着する。Next, if the substrate 1 on which the bumped work 6 is mounted is sent to a heating furnace and the bond 4 is heated and cured,
The bumped work 6 is firmly bonded to the substrate 1 and the mounting is completed (FIG. 2C). In this case, since the surface of the substrate 1 has been activated by plasma etching in the pretreatment, the bond 4 firmly adheres to the substrate 1.
【0017】図3は、本発明の他の実施の形態のバンプ
付きワークの実装工程図である。図3(a)において、
ボンド塗布器5により基板1の上面にボンド4を塗布す
る。この基板1の電極2には、半田部は形成されていな
い。この電極2としては、バンプ7と同じ材質の金、も
しくは表面が金メッキされたものが金属間接合を得やす
く好適である。またこの基板1も、好ましくは、図1に
示す前処理によりプラズマエッチングを行い、これによ
り基板1の表面を活性化させるとともに、電極2の表面
をクリーニングしておく。FIG. 3 is a mounting process diagram of a work with bumps according to another embodiment of the present invention. In FIG. 3 (a),
The bond applicator 5 applies the bond 4 to the upper surface of the substrate 1. No solder portion is formed on the electrode 2 of the substrate 1. The electrode 2 is preferably made of the same material as that of the bump 7 or gold-plated on the surface because it is easy to obtain metal-to-metal bonding. The substrate 1 is also preferably plasma-etched by the pretreatment shown in FIG. 1 to activate the surface of the substrate 1 and clean the surface of the electrode 2.
【0018】次に圧着ツール8でバンプ付きワーク6を
真空吸着して保持し、バンプ(金バンプ)7をボンド4
にめり込ませて電極2に着地させ(図3(b))、バン
プ付きワーク6を基板1に押し付けながら(矢印A)、
超音波振動を付与する(矢印B)。するとバンプ7の下
面は電極2にこすりつけられて若干扁平となり、金属間
接合によりバンプ7は電極2に仮接着される(図3
(c))。この場合、上記前処理により電極2をプラズ
マクリーニングすることにより、その表面の酸化膜もし
くは有機物は除去されるので、バンプ7はよりしっかり
電極2に接着される。このように超音波振動させながら
バンプ付きワーク6を基板1に押し付けると、この超音
波振動によりボンド4も振動してボンド4はバンプ付き
ワーク6の下面前面に十分に廻り込み、またボンド4中
の気泡も追い出される。Next, the work 6 with bumps is vacuum-sucked and held by the pressure bonding tool 8, and the bumps (gold bumps) 7 are bonded.
The electrode 2 and land it on the electrode 2 (FIG. 3B), while pressing the bumped work 6 against the substrate 1 (arrow A),
Ultrasonic vibration is applied (arrow B). Then, the lower surface of the bump 7 is rubbed against the electrode 2 and becomes slightly flat, and the bump 7 is temporarily bonded to the electrode 2 by intermetallic bonding (see FIG. 3).
(C)). In this case, since the oxide film or the organic substance on the surface of the electrode 2 is removed by plasma cleaning the electrode 2 by the above-mentioned pretreatment, the bump 7 is more firmly adhered to the electrode 2. When the work 6 with bumps is pressed against the substrate 1 while being ultrasonically vibrated in this way, the bond 4 also vibrates due to this ultrasonic vibration, and the bond 4 fully wraps around the lower surface and front face of the work 6 with bumps. Bubbles are also expelled.
【0019】次にバンプ付きワーク6が搭載された基板
1を加熱炉へ送り、ボンド4を加熱して硬化させれば、
バンプ付きワーク6は基板1にしっかり本接着され、実
装は終了する(図3(d))。Next, if the substrate 1 on which the bumped work 6 is mounted is sent to a heating furnace and the bond 4 is heated and cured,
The bumped work 6 is firmly bonded to the substrate 1 and the mounting is completed (FIG. 3D).
【0020】[0020]
【発明の効果】本発明は、バンプ付きワークを基板に搭
載する前に、基板にボンドを塗布するので、従来方法の
ように空隙を生じにくく、信頼性の高い実装が可能とな
る。またバンプは高周波振動により半田部や電極に仮接
着されるので、従来方法のように電極上の半田部を加熱
して溶融固化させる必要がなく、それだけタクトタイム
を短縮して生産性を上げることができる。According to the present invention, since the bond is applied to the substrate before mounting the work with bumps on the substrate, it is possible to realize highly reliable mounting unlike the conventional method. Also, since the bumps are temporarily bonded to the solder parts and electrodes by high frequency vibration, there is no need to heat and solidify the solder parts on the electrodes as in the conventional method, which shortens the takt time and improves productivity. You can
【0021】また基板の上面にボンドを塗布するのに先
立って、基板の上面をプラズマエッチングすることによ
り、基板の表面を活性化させ、ボンドの基板に対する接
着力を大巾に増大させ、バンプ付きワークを基板により
しっかり実装することができる。またプラズマエッチン
グにより電極表面の酸化膜を除去し、バンプをよりしっ
かり接着することができる。Further, prior to applying the bond to the upper surface of the substrate, the upper surface of the substrate is plasma-etched to activate the surface of the substrate, and the adhesive force of the bond to the substrate is greatly increased. The work can be mounted on the board firmly. Also, the oxide film on the electrode surface can be removed by plasma etching, and the bumps can be more firmly adhered.
【図1】本発明の一実施の形態の基板の前処理工程図FIG. 1 is a diagram showing a substrate pretreatment process according to an embodiment of the present invention.
【図2】本発明の一実施の形態のバンプ付きワークの実
装工程図FIG. 2 is a mounting process diagram of a work with bumps according to an embodiment of the present invention.
【図3】本発明の他の実施の形態のバンプ付きワークの
実装工程図FIG. 3 is a mounting process diagram of a work with bumps according to another embodiment of the present invention.
1 基板 2 電極 3 半田部 4 ボンド 6 バンプ付きワーク 7 バンプ 8 圧着ツール 1 substrate 2 electrodes 3 Solder part 4 bond 6 Work with bump 7 bumps 8 Crimping tool
Claims (3)
ンプ付きワークのバンプを前記基板の電極上の半田部に
着地させ、高周波振動を付与することによりバンプの下
端部を半田部にめり込ませて仮接着する工程と、ボンド
を加熱することにより硬化させてバンプ付きワークを基
板に本接着する工程と、を含むことを特徴とするバンプ
付きワークの実装方法。1. A step of applying a bond to an upper surface of a substrate, and a bump of a work with bumps is landed on a solder portion on an electrode of the substrate, and high frequency vibration is applied to the lower end portion of the bump to the solder portion. A mounting method of a work with bumps, comprising: a step of making the bond work and temporarily adhering it; and a step of hardening the bond by heating to bond the work with bumps to the substrate.
ンプ付きワークのバンプを前記基板の電極に着地させ、
高周波振動を付与することによりバンプを電極に仮接着
する工程と、ボンドを加熱することにより硬化させてバ
ンプ付きワークを基板に本接着する工程と、を含むこと
を特徴とするバンプ付きワークの実装方法。2. A step of applying a bond to the upper surface of a substrate, and landing a bump of a work with bumps on an electrode of the substrate,
Mounting of a bumped work characterized by including a step of temporarily bonding the bump to the electrode by applying high-frequency vibration, and a step of hardening the bond by heating to bond the work with the bump to the substrate Method.
て、基板の上面をプラズマエッチングすることを特徴と
する請求項1または2記載のバンプ付きワークの実装方
法。3. The method for mounting a work with bumps according to claim 1, wherein the upper surface of the substrate is plasma-etched prior to applying the bond to the upper surface of the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002269550A JP3726795B2 (en) | 2002-09-17 | 2002-09-17 | Bumped workpiece mounting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002269550A JP3726795B2 (en) | 2002-09-17 | 2002-09-17 | Bumped workpiece mounting method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18202497A Division JP3376861B2 (en) | 1997-07-08 | 1997-07-08 | Mounting method of work with bump |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003100799A true JP2003100799A (en) | 2003-04-04 |
JP3726795B2 JP3726795B2 (en) | 2005-12-14 |
Family
ID=19196893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002269550A Expired - Lifetime JP3726795B2 (en) | 2002-09-17 | 2002-09-17 | Bumped workpiece mounting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3726795B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009104293A1 (en) * | 2008-02-18 | 2009-08-27 | セイコーインスツル株式会社 | Method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus and radio clock |
JP2009200675A (en) * | 2008-02-20 | 2009-09-03 | Epson Toyocom Corp | Piezoelectric device and manufacturing method for the piezoelectric device |
-
2002
- 2002-09-17 JP JP2002269550A patent/JP3726795B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009104293A1 (en) * | 2008-02-18 | 2009-08-27 | セイコーインスツル株式会社 | Method for manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic apparatus and radio clock |
JP5147868B2 (en) * | 2008-02-18 | 2013-02-20 | セイコーインスツル株式会社 | Piezoelectric vibrator manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio timepiece |
JP2009200675A (en) * | 2008-02-20 | 2009-09-03 | Epson Toyocom Corp | Piezoelectric device and manufacturing method for the piezoelectric device |
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