JP2003100631A - Semiconductor manufacturing method and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method for manufacturing a crystalline silicon film, excellent in performance, reliability and stability, from an amorphous silicon film, and to provide a semiconductor device. SOLUTION: An islanded amorphous silicon film 5 laminated on a substrate 4 is provided with a catalyst substance adding area 9 for adding a catalyst substance, and a crystal growth area 10 is arranged in which a single crystal grain is grown, while the film 5 is configured so that a route 12 having crystal grain boundary guiding areas 11 for growing unnecessary crystal grains between the catalyst substance adding area 9 and the crystal growing area 10 at both sides of the same. The catalyst substance is added to the catalyst substance adding area 9, and the same area is heated whereby crystal growth is effected from the catalyst substance adding area 9 toward the crystal growth area 10. In this case, the unnecessary crystal grains are grown in the crystal grain boundary guiding areas 11 arranged at both sides of the route 12, and the same crystal grains are driven into the crystal grain boundary guiding areas 11 whereby only the single crystal grain can be grown in the crystal growth area 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor formed on a substrate and a semiconductor device. More specifically, an amorphous silicon film is formed on the substrate and the amorphous silicon film is formed. The present invention relates to a method for producing a crystalline silicon film produced by adding a catalyst substance that promotes crystallization of silicon, and a semiconductor device using the same.

[0002]

2. Description of the Related Art In recent years, thin film transistors (TFTs)
Attention is focused on thin film semiconductor devices represented by film transistors. A thin film semiconductor element uses a semiconductor thin film of several tens nm to several hundreds nm formed as an active layer on a substrate having an insulating surface by a CVD (Chemical Vapor Deposition) method or the like. By using the semiconductor thin film as an active layer, an insulated gate field effect semiconductor device, a diode or the like can be formed. An active matrix liquid crystal display device is known as one of application techniques using a semiconductor thin film. In an active matrix type liquid crystal display device, one or more TFTs are arranged in each of several hundreds of thousands or more pixel electrodes arranged in a matrix to control electric charges supplied to the pixel electrodes by the TFTs. There is.

An example of a semiconductor thin film used for the active layer of a TFT is an amorphous silicon film which can be easily formed. However, there is a problem that the amorphous silicon film has low electrical characteristics. In order to improve the electrical characteristics of the TFT, a silicon thin film having crystallinity may be used for the active layer. The crystalline silicon film is called polycrystalline silicon, microcrystalline silicon, or the like. The crystalline silicon film can be manufactured by first forming an amorphous silicon film, adding a catalyst substance that promotes crystallization to the amorphous silicon film, and then performing heating.

A conventional technique for producing a crystalline silicon film from an amorphous silicon film is disclosed in Japanese Patent Application Laid-Open No. 7-130652. In the conventional technique disclosed in Japanese Patent Application Laid-Open No. 7-130652, first, a catalyst substance introduction mask is formed on the surface of an amorphous silicon film formed on a substrate, and silicon is crystallized on the surface of the mask. A solution containing a promoting catalytic material is applied, and the catalytic material is added through the mask through hole. afterwards,
By annealing, the amorphous silicon is crystallized to obtain a crystalline silicon film.

[0005]

FIG. 5 shows a deviation of crystal orientation between adjacent points in a crystalline silicon film manufactured by a conventional technique in which a catalyst substance is added to an amorphous silicon film for crystallization. It is a figure which shows the distribution of the grain boundary classified according to the size of. The thick black line shown in FIG. 5 is the large-angle grain boundary 1 with a large deviation of the crystal orientation, and the part surrounded by the large-angle grain boundary 1 is one domain. Further, the black thin lines seen in the domain indicate the small-angle grain boundaries 2 with a small deviation of the crystal orientation. In addition, a belt-shaped region in which a number of small domains are gathered in FIG. As can be seen from FIG. 5, silicon is used as the catalyst material addition region 3
The crystal has grown from the surrounding area.

As described above, the crystalline silicon film produced by the conventional technique has a large number of large-angle boundaries 1 and the position of the large-angle boundaries 1 cannot be controlled. Therefore, when a TFT is manufactured using such a crystalline silicon film, there is a high possibility that the high-angle grain boundary 1 will enter the channel region. When the large tilt grain boundary 1 enters the channel region, T
This may deteriorate the electrical characteristics of the FT and cause variations in the characteristics.

It is indispensable to obtain a semiconductor thin film having good crystallinity in order to increase the density of the thin film semiconductor device and stabilize the electric characteristics. Among them, the crystal forming a single domain has very good crystallinity, and therefore, it can be used for a thin film semiconductor element that requires high characteristics.

Here, the single domain refers to a region in the crystal in which a large tilt angle grain boundary having a crystal orientation deviation of 5 degrees or more does not exist. However, within a single domain, there exists a small-boundary grain boundary with a crystal orientation shift of several degrees or less.
Therefore, in order to improve the electrical characteristics of a thin film semiconductor element such as a TFT, crystal growth may be performed so that the crystallinity of the silicon film used for the active layer becomes a single domain.

However, according to the conventional technique disclosed in Japanese Patent Laid-Open No. 7-130652, a large number of crystal nuclei are generated in the catalyst substance addition region and grow in the growth region as they are, so that a single domain can be grown. Can not.

The object of the present invention is to improve the performance from an amorphous silicon film,
It is an object of the present invention to provide a semiconductor manufacturing method and a semiconductor device for manufacturing a crystalline silicon film having excellent reliability and stability.

[0011]

According to the present invention, a catalyst substance which promotes crystallization of silicon is added to a part of the surface of an island-shaped amorphous silicon film laminated on a substrate, and energy is applied. A semiconductor manufacturing method for forming a crystalline silicon film by performing crystal growth from a catalyst substance-added region to which the catalyst substance has been added to a crystal growth region to which the catalyst substance has not been added. The crystalline silicon film has a shape in which a path having crystal grain boundary induction regions for growing unnecessary crystal grains on both sides is arranged between the catalyst substance addition region and the crystal growth region, and It is a semiconductor manufacturing method characterized by growing only a single crystal grain.

According to the present invention, the island-shaped amorphous silicon film laminated on the substrate has a catalyst substance addition region to which a catalyst substance is added and a crystal growth region in which a single crystal grain grows. A path having a crystal grain boundary induction region for growing unnecessary crystal grains on both sides is provided between the catalyst substance addition region and the crystal growth region. The island-shaped amorphous silicon film is crystallized by adding a catalyst substance to the catalyst substance adding region and applying energy, for example, heating.
The amorphous silicon film begins to crystallize from the catalyst substance added region,
Crystal growth is performed from the catalyst substance addition region toward the crystal growth region. At this time, by growing unnecessary crystal grains in the crystal grain boundary induction regions arranged on both sides of the path and driving the unnecessary crystal grains into the crystal grain boundary induction regions, only the crystal grains having one domain grow. Grow in the area. Therefore, only a single crystal grain can be grown in the crystal growth region. By using the crystal growth region as, for example, an active region of a semiconductor device, a semiconductor device having excellent electric characteristics can be manufactured.

Further, the present invention is characterized in that the distance between the catalyst substance addition region and the crystal grain boundary induction region is 1 μm or more and 20 μm or less.

When the distance between the catalyst substance addition region and the crystal grain boundary induction region is smaller than 1 μm, a plurality of domains are crystallized even after passing through the entrances to the crystal grain boundary induction regions arranged on both sides of the path. It grows toward the growth region and no single domain grows in the crystal growth region. Further, if the distance between the catalyst substance addition region and the crystal grain boundary induction region is larger than 20 μm, a plurality of domains will be formed to some extent by the time when reaching the entrances to the crystal grain boundary induction regions arranged at both ends of the path. Since the growth is large, it becomes impossible to completely drive unnecessary crystal grains into the crystal grain boundary induction region, and a single domain does not grow in the crystal growth region. According to the present invention, the distance between the catalyst substance addition region and the grain boundary induction region is 1 μm.
As described above, since it is 20 μm or less, only a single crystal grain can be grown in the crystal growth region.

Further, the present invention is characterized in that the areas of the crystal grain boundary inducing regions are 10 μm ² or more and 1000 μm ² or less, respectively.

When the area of the crystal grain boundary induction region is smaller than 10 μm ^2, the domain driven into the crystal grain boundary induction region does not completely enter the crystal grain boundary induction region but grows as it is in the crystal growth region. No single domain grows in the crystal growth region. Further, the area of the crystal grain boundary induction region is 10
If it is larger than 00 μm ^{2, the} region for growing the crystal becomes too large and the crystal growth stops before reaching the crystal growth region. According to the present invention, since the areas of the crystal grain boundary inducing regions arranged on both sides of the path are 10 μm ² or more and 1000 μm ² or less, respectively, it is possible to grow only a single crystal grain in the crystal growth region.

Further, the present invention is characterized in that the film thickness of the crystalline silicon film is 10 nm or more and 200 nm or less.

If the thickness of the crystalline silicon film is less than 10 nm, problems such as defective film formation easily occur. Further, if the thickness of the crystalline silicon film is thicker than 200 nm, it becomes difficult to form a single domain in the crystal growth region. According to the invention, the thickness of the crystalline silicon film is 10 nm or more and 200 nm or more.
Because of the following, it is possible to grow only a single crystal grain in the crystal growth region without causing a problem such as defective film formation.

In the present invention, the catalytic substance is Fe,
Co, Ni, Ge, Ru, Rh, Pd, Os, Ir, P
At least one element selected from t, Cu, and Au is used.

According to the present invention, Fe, Co, Ni, Ge, Ru and R are used as the catalyst substance for promoting the crystallization of the silicon film.
At least one element selected from h, Pd, Os, Ir, Pt, Cu, and Au can be used.

According to the present invention, the crystalline silicon film contains Fe,
Co, Ni, Ge, Ru, Rh, Pd, Os, Ir, P
At least one element selected from t, Cu, and Au is 1
It is characterized in that it is contained in a concentration of not less than × 10 ¹⁶ / cm ^{3 and not} more than 5 × 10 ¹⁹ / cm ³ .

When the amount of the catalytic substance element present in the crystal growth region is less than 1 × 10 ¹⁶ / cm ³ , the amorphous silicon film is less likely to be crystallized. In addition, when the element that is the catalyst substance existing in the crystal growth region is 5 × 10 ¹⁹ / cm ³
If the amount is larger than that, the amount of the catalytic substance remaining on the crystalline silicon film becomes excessive, which makes it difficult to perform the catalyst removal step of removing the catalyst for preventing deterioration of the electrical characteristics of the semiconductor device after crystallization. According to the present invention, an element which is a catalytic substance is 1 × 10 ¹⁶ / cm ³ or more and 5 × 1 or more in the crystalline silicon film.
Since it is contained at a concentration of 0 ¹⁹ / cm ³ or less, crystallization is likely to occur, and the catalyst removed after crystallization can be easily removed.

In the present invention, the catalyst substance addition area is provided with F
e, Co, Ni, Ge, Ru, Rh, Pd, Os, I
It is characterized in that at least one element selected from r, Pt, Cu, and Au is formed in a film thickness of 0.1 nm or more and 10 nm or less.

When the element which is the catalyst substance formed in the catalyst substance addition region is thinner than 0.1 nm, the amount of the catalyst substance diffused into the amorphous silicon is insufficient and a single domain is formed in the crystal growth region. Not done. Further, when the element which is the catalyst substance formed in the catalyst substance addition region is thicker than 10 nm, the amount of the catalyst substance becomes excessive and the catalyst substance remains on the crystalline nitrogen film. According to the invention, since the element which is the catalyst substance is formed in the catalyst substance addition region in a film thickness of 0.1 nm or more and 10 nm or less, a single crystal grain can be grown in the crystal growth region. Moreover, it is possible to prevent the catalytic substance from remaining on the crystalline nitrogen film.

The present invention is also characterized in that energy is applied by performing heat treatment at a temperature of 550 ° C. or higher and 650 ° C. or lower.

According to the present invention, the temperature of the heat treatment is 550.
If the temperature is lower than ° C, it becomes difficult for the amorphous silicon film to crystallize rapidly, and it takes time to crystallize. Further, if the temperature of the heat treatment is higher than 650 ° C., the crystallization of the amorphous silicon film starts even in the region to which the catalyst substance is not added, and the crystal grains of the crystalline silicon film become minute, resulting in crystallization. It is not possible to grow a single crystal grain in the growth region. Since energy is applied by performing heat treatment at a temperature of 550 ° C. or higher and 650 ° C. or lower, it is possible to grow a crystal in an appropriate time and to grow a single crystal grain in a crystal growth region. You can

In addition, according to the present invention, before the addition of the catalyst substance, the surface of the amorphous silicon film excluding the region where the catalyst substance is added is selected from among silicon nitride film, silicon oxide film and silicon carbide film having a film thickness of 50 nm or more. It is characterized by covering with at least one kind.

According to the present invention, before the addition of the catalyst substance, the surface of the amorphous silicon film excluding the catalyst substance addition region is formed into a silicon nitride film, a silicon oxide film or a silicon carbide film having a thickness of 50 nm or more. Since at least one of them is covered, the catalyst substance can be added only to the catalyst substance addition region.

Further, the present invention is a semiconductor device in which a crystalline silicon film formed on a substrate is used as an active region, and energy is applied to a substrate in which an amorphous silicon film is laminated in an island shape, From the catalyst substance-added region where a catalyst substance that promotes crystallization is added to a part of the surface of the island-shaped amorphous silicon film, through a grain boundary induction region for growing unnecessary crystal grains, In the semiconductor device, the crystal growth region crystallized into a crystal growth region for growing only the crystal grains is used as an active region.

According to the present invention, an island-shaped amorphous structure composed of a catalyst substance addition region to which a catalyst is added, a crystal grain boundary induction region for growing unnecessary crystal grains, and a crystal growth region for growing only a single crystal grain. A crystal for growing unnecessary crystal grains from a catalyst substance-added region to which energy is applied to the substrate on which the crystalline silicon film is formed and a catalyst substance that promotes crystallization of the island-shaped amorphous silicon film is added. Since the semiconductor device is configured with the crystal growth region crystallized into a crystal growth region for forming only a single crystal grain through the grain boundary induction region as an active region, a semiconductor device having excellent electrical characteristics is manufactured. It becomes possible.

Further, the present invention is characterized in that the distance between the catalyst substance addition region and the crystal grain boundary induction region is 1 μm or more and 20 μm or less.

According to the present invention, since the distance between the catalyst substance added region and the crystal grain boundary induction region is 1 μm or more and 20 μm or less, unnecessary crystal grains can be grown in the crystal grain boundary induction region. , A single crystal grain can be grown in the crystal growth region.

The present invention also relates to one of the above-mentioned grain boundary induction regions.
One area is 10 μm ² or more and 1000 μm ² or less.

According to the present invention, since one area of the crystal grain boundary inducing region is 10 μm ² or more and 1000 μm ² or less, only a single crystal grain can be grown in the crystal growth region.

Further, the present invention is characterized in that the thickness of the crystalline silicon film is 10 nm or more and 200 nm or less.

According to the present invention, the thickness of the crystalline silicon film is 1
Since the thickness is 0 nm or more and 200 nm or less, there is no film formation defect and a single crystal grain is easily formed in the crystal growth region.

Further, according to the present invention, in the crystalline silicon film, F
e, Co, Ni, Ge, Ru, Rh, Pd, Os, I
At least one element selected from r, Pt, Cu, and Au is contained at a concentration of 1 × 10 ¹⁶ / cm ³ or more and 5 × 10 ¹⁹ / cm ³ or less.

According to the invention, a catalyst is present in the crystalline silicon film.
The element that is a substance is 1 × 10¹⁶/ Cm ³Above, 5 × 10¹⁹
/ Cm³Since it is contained in the following concentrations, it is easy to crystallize.
Therefore, the catalyst substance can be easily removed.

[0039]

FIG. 1 is a diagram showing a procedure of a semiconductor manufacturing method according to an embodiment of the present invention. 1A to 1E are cross-sectional views in each step of the semiconductor manufacturing method, and the steps sequentially proceed from FIG. 1A to FIG.

First, as shown in FIG. 1A, an amorphous silicon film 5 is formed on one surface of the substrate 4 by the CVD method or the like. As the substrate 4, a substrate having an insulative surface such as a quartz substrate or a glass substrate, or a silicon wafer having an SiO ₂ film or SiN film as an insulating film formed on the surface is used.

Next, as shown in FIG. 1B, a SiO ₂ film 6 is formed by a CVD method or the like so as to cover the amorphous silicon film 5. Then, a resist is applied on the SiO ₂ film 6, exposed and developed, a photolithography process is performed, and then dry etching is performed, so that an island-shaped amorphous film is formed as shown in FIG. 1C. A silicon film 5 and a SiO ₂ film 6 laminated thereon are formed. Next in FIG.
As shown in (d), the SiO ₂ film 6 on the amorphous silicon film 5 is formed.
Are completely removed. FIG. 2 is a plan view of FIG. 1D viewed from one side of the substrate 4. The amorphous silicon film 5 is formed in a cross shape as shown in FIG. Amorphous silicon film 5
Has a catalyst substance addition region 9 to which a catalyst substance is added, a crystal growth region 10 in which a single crystal grain grows, a grain boundary induction region 11 in which unnecessary crystal grains grow, and a path 12.
Catalyst substance addition region 9, path 12 and crystal growth region 10
Are arranged in a straight line, and a pair of crystal grain boundary induction regions 11 are provided so as to project in a square direction from both sides of the path 12.

Next, as shown in FIG. 1E, a mask layer 13 is formed on the amorphous silicon film 5 and the entire substrate 4 by the CVD method or the like. As the mask layer 13, at least one of a silicon nitride film, a silicon oxide film, and a silicon carbide film having a film thickness of 50 nm or more is used. Next, the amorphous silicon film 5
A photolithography process and dry etching are performed so that the catalyst substance-added region 9, which is a part of, is exposed to the outside. As a result, a window 14 is formed in the mask layer 13 on the catalyst substance added region 9 of the amorphous silicon film 5 as shown in FIG. The catalyst substance-added region 9 of the amorphous silicon film 5 is exposed to the outside through the window 14 formed in the mask layer 13.

Next, Fe, Co, Ni, Ge, Ru, Rh, Pd, O, which are catalytic substances, are formed on the mask layer 13 and on the catalytic substance added region 9 which is the exposed portion of the amorphous silicon film 5.
at least 1 selected from s, Ir, Pt, Cu, Au
Add seed elements. The catalyst substance can be added to the catalyst substance addition region 9 by forming a catalyst substance film by a sputtering method, forming a catalyst substance film by an evaporation method, or applying a catalyst substance solution. Heating is performed after the catalyst is added to the catalyst substance addition region 9. As a result, nucleation occurs in the catalyst substance-added region 9 to which the catalyst substance has been added, and the catalyst substance diffuses into the region of the amorphous silicon film 5 to which the catalyst substance has not been added to cause crystallization, resulting in crystallinity. A silicon film is produced.

FIG. 4 is a plan view showing a state of crystal grains of the crystalline silicon film 15 obtained by crystallizing the amorphous silicon film 5. In the amorphous silicon film 5, crystal nuclei 16 are generated in the catalyst substance addition region 9 to which the catalyst substance is added, and crystals grow toward the crystal growth region 10. By providing the crystal grain boundary inducing regions 11 on both sides of the path 12 arranged between the crystal growth region 10 and the catalyst substance addition region 9, the catalyst substance addition region 9 grows to a region to which no catalyst is added. Crystal grains 17 grown on portions of the crystal grains near both sides of the path 12
Does not grow into the crystal growth region 10 but grows toward the crystal grain boundary induction region 11 provided in the path 12 and is driven to the edge of the crystal grain boundary induction region 11 and stops growing. On the other hand, the crystal grains growing in the approximate center of the path 12 are the crystal growth region 1
It grows to zero. According to the study by the applicants, when the crystal grains reach the crystal growth region 10, one crystal grain is finally selected, and a single crystal grain (single domain) having no large tilt grain boundary It has been found that 18 is formed in the crystal growth region 10. In the crystalline silicon film, the catalytic substance element is 1 × 10 ¹⁶ / cm ³ or more and 5 × 10 ¹⁹ / cm ³ or more.
It is contained at a concentration of not more than cm ³ . When the amount of the catalyst element existing in the crystal growth region 10 is less than 1 × 10 ¹⁶ / cm ³ , the amorphous silicon film 5 is less likely to be crystallized.
Further, if the element which is the catalyst present in the amorphous silicon film 5 is 5 ×
If the amount is more than 10 ¹⁹ / cm ³ , the amount of the catalytic substance remaining in the crystalline silicon film becomes excessive, and the step of removing the catalyst in order to prevent the deterioration of the electrical characteristics of the semiconductor device after crystallization is required. It will be difficult.

The crystalline silicon film manufactured by the above-described semiconductor manufacturing method is used as an active region of a semiconductor device.
When manufacturing a semiconductor device using a crystalline silicon film as an active region, only the crystal growth region 10 in which a single crystal grain is formed is used. That is, the catalyst substance addition region 9, the crystal grain boundary induction region 11 and the path 12 are removed by etching or the like. In the case where the insulating film is formed on the substrate on which the insulating film is formed, the traces of the removed catalyst substance-added region 9, the crystal grain boundary inducing region 11 and the path 12 are left on the insulating film. Further, the semiconductor device may be manufactured by using the manufactured cross-shaped crystalline silicon film as it is without removing the region other than the crystal growth region 10.

As a semiconductor device manufactured using the above crystalline silicon film, for example, a TFT can be cited. Forming a gate electrode, a source electrode, and a drain electrode on the crystalline silicon film so that the crystalline silicon film formed in large numbers in an island shape on the substrate by the above-described semiconductor manufacturing method becomes a channel which is an active region. Thus, a TFT having a planar structure can be manufactured. Further, after forming the gate electrode and the insulating film on the substrate, the island-shaped crystalline silicon film is formed on the insulating film by the above-described semiconductor manufacturing method, and the source electrode and the drain electrode are formed on the crystalline silicon film. by doing,
It is possible to manufacture a TFT having a staggered structure.

In this embodiment, the shape of the amorphous silicon film 5 is cruciform, but the path 1 provided in the amorphous silicon film 5 from the catalyst substance addition region 9 to the crystal growth region 10 is provided.
The shape is not limited to the cross shape as long as the crystal grain boundary induction regions 11 are provided on both sides of 2.

Specific examples of the present invention will be described below. (Example 1) Si ₂ was formed on a quartz substrate by a low pressure CVD method.
An amorphous silicon film having a film thickness of 100 nm is formed using H ₆ gas. Next, SiH ₄ gas and O ₂ are formed by the atmospheric pressure CVD method.
Using a gas, a SiO ₂ film having a film thickness of 100 nm is formed. Next, a resist is applied, a photolithography process of exposure and development is performed, and further dry etching is performed to form a cross-shaped amorphous silicon film. In this embodiment, the distance between the catalyst substance added region of the amorphous silicon film and the crystal grain boundary induction region is set to 5 μm. The area of the crystal grain boundary inducing regions formed on both sides of the path is 100 μm ² .

[0049] After this, an SiO ₂ film is removed entirely newly by using the SiH ₄ gas and O ₂ gas by atmospheric pressure CVD method, the film thickness to form a SiO ₂ film of 200 nm. This S
The iO ₂ film serves as a mask layer. Then, a photolithography process is performed to remove a part of the SiO ₂ film by 10: 1 BHF.
Etching with (buffered hydrofluoric acid), SiO ₂
A part of the film is opened to form a window to expose the catalyst substance added region of the amorphous silicon film.

The thickness 1nm nickel by sputtering on the mask layer and the exposed portion of the SiO ₂ film (N
i) After forming a thin film, it is heated to 600 ° C. As a result, a crystalline silicon film in which a single crystal grain is formed in the above crystal growth region can be manufactured.

When a TFT is manufactured by using the crystal growth region in which a single crystal grain is formed in the active region by the above method, the field effect mobility is about 250 cm ² / Vs and the threshold voltage is about 1.5V. TF with excellent electrical characteristics
It was possible to make T. Also, no abnormal increase in leakage current was observed during TFT operation, and 1p per unit W
A stable TFT having a value as low as A or less was able to be manufactured.

In this example, a nickel thin film was formed in the crystalline substance-added region of the amorphous silicon film by the sputtering method. You may.

In the present embodiment, the distance between the catalyst substance added region and the crystal grain boundary inducing region is set to 5 μm, but this distance is 1 μm or more and 20 μm or less,
Other lengths are possible. When the distance between the catalyst substance addition region and the crystal grain boundary induction region is less than 1 μm, a plurality of domains still form the crystal growth region even after passing through the entrances to the crystal grain boundary induction regions arranged on both sides of the path. The single domain does not grow in the crystal growth region. Further, if the distance between the catalyst substance addition region and the crystal grain boundary induction region is larger than 20 μm, a plurality of domains have grown to some extent by the time when reaching the entrance of the crystal grain boundary induction region. It is impossible to completely drive into the grain boundary induction region, and a single domain does not grow in the crystal growth region.

In this embodiment, the area of the crystal grain boundary inducing region is set to 100 μm ² , but this area is 10 μm.
It may be formed to have another area as long as it is m ² or more and 1000 μm ² or less. The area of the grain boundary induction region is 10μ
When it is smaller than m ^2, the domain driven to the crystal grain boundary induction region does not completely enter the crystal grain boundary induction region and grows as it is to the crystal growth region, so that no single domain grows in the crystal growth region. Further, if the area of the crystal grain boundary inducing region is larger than 1000 μm ² , the growth region becomes too large and the growth stops before reaching the crystal growth region.

In this embodiment, the amorphous silicon film is 100
The thickness of the crystalline silicon film obtained by crystallization of the amorphous silicon film is 10 nm or more, 200 nm.
Other thicknesses may be used as long as the thickness is less than or equal to nm. When the film thickness of the crystalline silicon film is thinner than 10 nm, problems such as defective film formation easily occur. Further, if the thickness of the crystalline silicon film is thicker than 200 nm, it becomes difficult to form a single domain.

In this embodiment, nickel is used as the catalyst substance and a nickel thin film is formed to a thickness of 1 nm. However, the catalyst substance is Fe, Co, Ni, Ge, Ru, Rh, Pd, O.
at least 1 selected from s, Ir, Pt, Cu, Au
A seed element may be used, and the catalyst substance layer may be formed to any thickness of 0.1 nm or more and 10 nm or less.

The catalyst substance layer covering the catalyst substance addition region has a thickness of 0.
When the thickness is less than 1 nm, the amount of the catalyst substance diffused from the catalyst substance layer to the amorphous silicon is insufficient, and a single domain cannot be formed. Further, the catalyst substance layer covering the catalyst substance addition region is 10
If the thickness is thicker than nm, the amount of the catalytic substance becomes excessive and the catalytic substance remains on the crystalline nitrogen film.

Further, in this embodiment, the heat treatment is carried out at a temperature of 600 ° C., but the heat treatment may be carried out at any temperature of 550 ° C. or higher and 650 ° C. or lower. When the temperature of the heat treatment is lower than 550 ° C., the crystallization of the amorphous silicon film is hard to proceed rapidly, and it takes time to crystallize. Further, when the temperature of the heat treatment is higher than 650 ° C., the amorphous silicon film is crystallized even in the region where the catalyst substance is not added, and the crystal of the crystalline silicon film becomes minute, resulting in crystal growth. No single domain can be grown in the region.

[0059]

As described above, according to the present invention, in the island-shaped amorphous silicon film laminated on the substrate, the catalyst substance added region to which the catalyst substance is added and the single crystal grain grows. And a crystal grain growth region, and a path having crystal grain boundary inducing regions on both sides between the catalyst substance addition region and the crystal growth region for growing unnecessary crystal grains is arranged. A crystalline silicon film can be formed by adding a catalyst substance to the catalyst substance addition region and heating. By providing the crystal grain boundary induction regions on both sides of the path, it is possible to grow unnecessary crystal grains in the crystal grain boundary induction region and to grow only a single crystal grain in the crystal growth region. Therefore, a crystalline silicon film having excellent performance, reliability and stability and good crystallinity can be easily formed from the amorphous silicon film. By using the crystal growth region as, for example, an active region of a semiconductor device, a semiconductor device having excellent electric characteristics can be manufactured.

[Brief description of drawings]

1A to 1D are diagrams showing a procedure of a semiconductor manufacturing method according to an embodiment of the present invention.

FIG. 2 is a plan view of FIG. 1D viewed from one side of a substrate 4.

FIG. 3 is a plan view of a substrate 4 having a window 14 formed in a mask layer 13.

FIG. 4 shows that the amorphous silicon film 5 is crystallized and the crystalline silicon film 15 is formed.
FIG. 6 is a plan view showing the state of crystal grains when the is manufactured.

FIG. 5 is a grain boundary of a crystalline silicon film produced by a conventional technique in which a catalyst substance is added to an amorphous silicon film to crystallize the amorphous silicon film. It is a figure which shows the distribution of.

[Explanation of symbols]

4 substrate 5 amorphous silicon film 6 SiO ₂ film 9 catalyst substance added region 10 crystal growth region 11 crystal grain boundary induction region 12 path 13 mask layer 14 window 16 crystal nucleus 17 crystal grain 18 single domain

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Claims (14)

[Claims] 1. A catalyst substance for promoting crystallization of silicon is added to a part of the surface of an island-shaped amorphous silicon film laminated on a substrate, and the catalyst substance is added by applying energy. A semiconductor manufacturing method for forming a crystalline silicon film by performing crystal growth from a catalyst substance addition region to a crystal growth region to which a catalyst substance is not added, wherein the island-shaped amorphous silicon film is A single crystal grain is grown in the crystal growth region with a shape in which a path having crystal grain boundary induction regions for growing unnecessary crystal grains on both sides is arranged between the material addition region and the crystal growth region. A method for manufacturing a semiconductor, comprising: 2. The method for producing a semiconductor according to claim 1, wherein the distance between the catalyst substance addition region and the crystal grain boundary induction region is 1 μm or more and 20 μm or less. 3. The area of each of the grain boundary induction regions is 10
^{2. The} method for producing a semiconductor according to claim 1, wherein the thickness is at least μm ² and at most 1000 μm ² . 4. The method for producing a semiconductor according to claim 1, wherein the crystalline silicon film has a film thickness of 10 nm or more and 200 nm or less. 5. The catalyst material of Fe, Co, Ni,
Ge, Ru, Rh, Pd, Os, Ir, Pt, Cu, A
The semiconductor manufacturing method according to claim 1, wherein at least one element selected from u is used. 6. The crystalline silicon film comprises Fe, Co, Ni,
Ge, Ru, Rh, Pd, Os, Ir, Pt, Cu, A
at least one element selected from u is 1 × 10 ¹⁶ / c
The method for manufacturing a semiconductor according to claim 1, wherein the semiconductor is contained at a concentration of m ³ or more and 5 × 10 ¹⁹ / cm ³ or less. 7. The Fe, Co, N in the catalyst substance addition region
i, Ge, Ru, Rh, Pd, Os, Ir, Pt, C
at least one element selected from u and Au is 0.1n
The semiconductor manufacturing method according to claim 1, wherein the film is formed with a film thickness of m or more and 10 nm or less. 8. The method of manufacturing a semiconductor according to claim 1, wherein energy is applied by performing heat treatment at a temperature of 550 ° C. or higher and 650 ° C. or lower. 9. Before the addition of the catalyst substance, at least one of a silicon nitride film, a silicon oxide film, and a silicon carbide film having a film thickness of 50 nm or more is formed on the surface of the amorphous silicon film excluding the catalyst substance addition region. The method for manufacturing a semiconductor according to claim 1, further comprising: 10. A semiconductor device comprising a crystalline silicon film formed on a substrate as an active region, wherein energy is applied to a substrate having an amorphous silicon film laminated in an island shape, Of the amorphous silicon film, a single crystal grain is passed through a grain boundary induction region for growing unnecessary crystal grains from a catalyst substance addition region in which a catalyst substance for promoting crystallization is added. A semiconductor device characterized in that the crystal growth region crystallized into a crystal growth region for growing only is used as an active region. 11. The semiconductor device according to claim 10, wherein the distance between the catalyst substance addition region and the crystal grain boundary induction region is 1 μm or more and 20 μm or less. 12. The semiconductor device according to claim 10, wherein one area of the crystal grain boundary inducing region is 10 μm ² or more and 1000 μm ² or less. 13. The crystalline silicon film having a thickness of 10 nm or more and 200 nm or less.
The semiconductor device described. 14. Fe, Co, N in the crystalline silicon film.
i, Ge, Ru, Rh, Pd, Os, Ir, Pt, C
At least one element selected from u and Au is 1 × 10
11. The semiconductor device according to claim 10, wherein the semiconductor device is contained at a concentration of ¹⁶ / cm ³ or more and 5 × 10 ¹⁹ / cm ³ or less.