JP2003100564A - Method of manufacturing solid electrolytic capacitor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid electrolytic capacitor with a large capacitance which can be directly connected to a semiconductor component and has a superior high-frequency characteristic. SOLUTION: One surface of an aluminium foil 3 is made porous, and a protective film 15 is formed on the other surface thereof except for a portion on which a connecting terminal 10 and a through hole electrode 7 are formed. The through hole 4 is formed in a portion in which a resist film is formed on the portion of the other surface and the protective film 15 on which the connecting terminal 10 is formed and the through hole electrode 7 is formed. An insulating film 5 is formed on the inner wall of the through hole 4. The resist film on the other side of the aluminium foil 3 is removed, and a dielectric coating film 2 is formed in the porous portion of the aluminium foil 3. Then the through hole electrode 7 is formed in the through hole 4. A solid electrolytic layer 6 and a collector layer 8 on top thereof are formed on the dielectric coating film 2. The resist film on the portion of the protective film 15 on which the connecting terminal 10 is formed is removed, and then the connecting terminal 10 is formed on the portion from which the resist film is removed and on the exposed surface of the through hole electrode 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid electrolytic capacitor used in various electronic devices.

[0002]

2. Description of the Related Art As a conventional solid electrolytic capacitor, one side or an intermediate core portion in the thickness direction of a porous valve metal sheet body made of aluminum or tantalum is used as an electrode portion, and Forming a dielectric oxide film on the surface of the part, providing a solid electrolyte layer such as a functional polymer on the surface, a current collector layer on the surface of the solid electrolyte layer,
An electrode layer made of metal is provided on the current collector layer to form a capacitor element, and the capacitor element is formed as a single body or a laminated body, and then the electrode portions or electrode layers of each capacitor element are collectively connected to an external terminal and then externally connected. The exterior was formed so as to expose the terminals.

[0003]

In the above-mentioned conventional solid electrolytic capacitor, a large capacity and an equivalent series resistance (hereinafter referred to as E
Although it can be lowered, it must be mounted on a circuit board via an external terminal like a general solid electrolytic capacitor. As described above, in the solid electrolytic capacitor which is surface-mounted on the circuit board like the semiconductor component, the ESR and the equivalent series inductance (hereinafter referred to as ESL) characteristics in the actual circuit configuration have the terminal length and the wiring length. Therefore, there is a problem in that it becomes large and inferior in high frequency response.

An object of the present invention is to provide a method of manufacturing a large-capacity solid electrolytic capacitor which eliminates the above-mentioned conventional drawbacks and can be directly connected to semiconductor parts and has excellent high frequency response. .

[0005]

In order to solve the above-mentioned problems, the invention according to claim 1 of the present invention provides a portion for forming a connection terminal and a through-hole electrode on the other surface of an aluminum foil having one surface made porous. After forming the protective film except for forming the resist film on one side except the part where the through-hole electrode is formed and the part where the connection terminal of the protective film is formed,
A through hole is formed in the part where the through hole electrode is formed, an insulating film is formed on the inner wall of this through hole, and then the resist film on one side of the aluminum foil is removed to form a dielectric film on the porous part of the aluminum foil. Then, after forming a through-hole electrode in the through-hole, a solid electrolyte layer is formed on the dielectric film, a current collector layer is further formed on the solid electrolyte layer, and subsequently a connection terminal of a protective film is formed. This is a method of manufacturing a solid electrolytic capacitor in which a connection terminal is formed on the exposed surface of the portion and the through hole electrode after removing the resist film on the part.It is a solid electrolytic capacitor that can be directly connected to semiconductor parts and has excellent high frequency characteristics. Capacitors can be easily produced.

According to a second aspect of the present invention, the protective film is formed on the other surface of the aluminum foil having one surface made porous, except for the portions where the connection terminals and the through-hole electrodes are formed, and the portions where the through-hole electrodes are formed are excluded. After forming a resist film on the side where the connection terminals of the protective film are formed and on the side where the through-hole electrode is formed, fill the through-hole with insulating resin and insulate the wall surface of the through-hole. 2nd insulating resin so that resin remains
Of the aluminum foil, then the resist film on one side of the aluminum foil is removed to form a dielectric film on the porous portion of the aluminum foil, and then a through-hole electrode is formed in the through-hole and then the dielectric film is formed. A solid electrolyte layer is formed on the coating, and a current collector layer is further formed on it.
The method for producing a solid electrolytic capacitor, comprising: subsequently removing a resist film in a portion of the protective film where a connection terminal is formed, and then forming a connection terminal on the exposed portion of the resist film and the exposed surface of the through-hole electrode. In addition to the function, the insulation reliability of the through hole can be made higher.

According to a third aspect of the present invention, the protective film is formed on the other surface of the aluminum foil having one surface made porous, except for the portion where the connection terminal is formed, and the one surface and the other surface having the protective film formed thereon. After forming a resist film on the entire surface of
A through hole is formed in the part where the through hole electrode is formed, an insulating film is formed on the inner wall of this through hole, and then the resist film on one side of the aluminum foil is removed to form a dielectric film on the porous part of the aluminum foil. Then, after forming a through-hole electrode in the through-hole, a solid electrolyte layer is formed on the dielectric film, a current collector layer is further formed on the solid electrolyte layer, and then a resist of a portion for forming a connection terminal is formed. A method of manufacturing a solid electrolytic capacitor, wherein a connection terminal is formed on the exposed surface of a through hole electrode and a portion where the resist film is removed after the film is removed, which is more excellent in productivity in addition to the function of claim 1. be able to.

According to a fourth aspect of the present invention, a protective film is formed on the other surface of the aluminum foil having one surface made porous, except for the portions where the connection terminals and the through-hole electrodes are formed, and the connection terminals on the one surface and the protection film are formed. After forming a resist film on the part to be formed, form a through hole on the part to form a through hole electrode, and after forming an insulating film on the inner wall of this through hole, remove the resist film on one side of the aluminum foil to remove the aluminum foil. A dielectric film is formed on the porous portion, and then a second resist film is formed on the entire surface of the other surface, and then a solid electrolyte layer is formed on the dielectric film and on the inner wall of the through hole. After removing the resist film, a through hole electrode is formed in the through hole, a current collector layer is further formed on the solid electrolyte layer, and then a portion of the protective film where the connection terminal is formed is formed. A method for producing a solid electrolytic capacitor, comprising: forming a connection terminal on the exposed surface of the through hole electrode and through hole electrode in the through hole and the exposed surface of the solid electrolyte layer after removing the strike film; The insulation between the connection terminals can be high.

The invention according to claim 5 uses any one of an epoxy resin, a polyimide resin, a silicon resin, an acrylic resin and a phenol resin as a protective film.
The method for producing a solid electrolytic capacitor as described in any one of 1 above, wherein the function can be maintained without being deteriorated when the aluminum foil is etched, the dielectric film is formed, or the solid electrolyte is formed in the subsequent step.

The invention according to claim 6 is the method for producing a solid electrolytic capacitor according to any one of claims 1 to 4, wherein a photosensitive resin or an organic film having adhesiveness is used as the resist film. Therefore, a thin and uniform resist film can be easily formed, and a pattern can be formed with high accuracy on a target portion on the aluminum foil.

The invention according to claim 7 uses any one of a dipping method, a spin coater, a screen printing method and a film bonding method as a method for forming a protective film and a resist film.
The method for producing a solid electrolytic capacitor as described in any one of 1 to 3, and the solid electrolytic capacitor can be reliably formed on an aluminum foil by selecting an optimum forming method depending on the resist used.

The invention according to claim 8 is the method for producing a solid electrolytic capacitor according to any one of claims 1 to 4, wherein an electrodeposition method is used as a method for forming an insulating film. It is possible to form a thin insulating film having a uniform thickness.

According to a ninth aspect of the present invention, an insulating resin is formed as a first layer by an electrodeposition method as a method for forming an insulating film, and thereafter an insulation is obtained by mixing microgel, carbon fine particles and titanium oxide fine particles. 5. The method for producing a solid electrolytic capacitor according to claim 1, wherein a conductive resin is formed as a second layer, wherein a portion not electrodeposited in the first layer is covered with a second layer. Then, by further mixing the resin with microgel, carbon fine particles, and titanium oxide fine particles, it is possible to form an insulating film having excellent edge portion coverage and insulation reliability.

The invention according to claim 10 uses any one of a laser processing method, a punching processing method, a drill processing method, an electric discharge processing method and an etching method as a method for forming a through hole. According to one of the methods for manufacturing a solid electrolytic capacitor, the through hole can be formed at low cost by selecting an optimum processing method depending on the through hole diameter and the number of holes.

The invention according to claim 11 uses any one of a laser machining method, a punching machining method, a drill machining method and an electric discharge machining method as a method for forming the second through hole. According to one of the methods for manufacturing a solid electrolytic capacitor, the second through hole can be formed at low cost by selecting an optimal processing method depending on the through hole diameter and the number of holes.

The invention according to claim 12 is the method for producing a solid electrolytic capacitor according to any one of claims 1 to 4, wherein the edge of the through hole on the surface on which the dielectric film is formed is chamfered. By improving the coverage of the insulating film, it is possible to reduce insulation failure.

The invention as set forth in claim 13 uses a method of filling a conductive adhesive and then curing it as a method of forming a through-hole electrode, and manufacturing the solid electrolytic capacitor according to any one of claims 1 to 4. It is a method, and the manufacturing process is easy and the productivity is excellent.

According to a fourteenth aspect of the present invention, the method of manufacturing a solid electrolytic capacitor according to any one of the first to fourth aspects uses a method of applying a conductive adhesive and curing the same as a method of forming a connection terminal. Therefore, it is possible to obtain a capacitor which has an easy manufacturing process and excellent productivity.

According to the fifteenth aspect of the present invention, the solid electrolytic capacitor according to any one of the first to fourth aspects is used, in which one of electroplating and electroless plating is used as a method of forming the connection terminal. This is a method, and the forming process is easy, and a large number of connection terminals can be formed with high homogeneity at one time.

The invention according to claim 16 uses a composition containing a pi-electron conjugated polymer and / or other conductive polymer as a material for forming the solid electrolyte layer.
4 is a method for manufacturing a solid electrolytic capacitor according to any one of 4 to 4, which has excellent heat resistance and can reduce ESR.

The invention of claim 17 is a method for forming a solid electrolyte layer, which comprises chemical polymerization of a conductive polymer and / or
Alternatively, it is the method for producing a solid electrolytic capacitor according to any one of claims 1 to 4, which uses a forming method by electrolytic polymerization, and the forming process is easy and the productivity is excellent.

The invention according to claim 18 is a method for forming a solid electrolyte layer, which comprises applying and suspending a suspension of a powder of a conductive polymer, and then electrolytically polymerizing the conductive polymer to form a solid electrolyte layer. The method for producing a solid electrolytic capacitor according to any one of claims 1 to 4 to be used, which can further reduce the stress on the dielectric film.

The invention according to claim 19 uses a method of thermally decomposing manganese nitrate to form manganese dioxide as a method of forming a solid electrolyte layer. A method of manufacturing a capacitor,
It can be reliably produced with established technology.

According to a twentieth aspect of the present invention, as a method of forming the solid electrolyte layer, a method of pyrolyzing manganese nitrate to form manganese dioxide and then electrolytically polymerizing a conductive polymer is used. 4 is a method for manufacturing a solid electrolytic capacitor described in any one of 4 to 4, it is possible to reliably produce a low ESR capacitor with established technology.

According to a twenty-first aspect of the invention, the solid electrolytic capacitor according to any one of the first to fourth aspects uses a suspension of carbon fine particles and a conductive adhesive as a method for forming the current collector layer. In the manufacturing method of No. 3, the ESR can be lowered by reducing the contact resistance with the solid electrolyte layer, and the capacitor capacitance can be efficiently extracted to the current collector layer.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a solid electrolytic capacitor of the present invention will be described below with reference to embodiments and drawings.

(Embodiment 1) The invention described in claims 1, 5 to 21 will be described with reference to Embodiment 1 of the present invention and FIGS.

FIG. 1 is a perspective view of a solid electrolytic capacitor according to Embodiment 1 manufactured by the method of the present invention.
FIG. 2 is a sectional view of the same, and FIG. 3 is an enlarged sectional view of the main part.

1 to 3, reference numeral 1 denotes a sheet-shaped capacitor element, in which a porous portion (not shown) in which one surface of an aluminum foil 3 is made porous by etching is formed, and further a plurality of through holes are formed. It has a hole 4 and a through-hole electrode 7 filled in the through-hole 4, and the through-hole electrode 7 and the aluminum foil 3 are electrically insulated by an insulating film 5. A protective film 15 is provided on the other surface of the aluminum foil 3, and the connection terminals 10 are formed at predetermined positions. The dielectric film 2 is formed on the surface of the porous part formed on one side of the aluminum foil 3, and the solid electrolyte layer 6 made of a conductive organic material is further formed on the surface of the dielectric film 2 to function as a capacitor together with the aluminum foil 3. To do. By making the surface porous, the area functioning as a capacitor is enlarged, and by filling the conductive organic material to the details of the porous dielectric coating 2, a large capacitance can be obtained. Further, a current collector layer 8 is formed on the surface of the solid electrolyte layer 6.
Is provided to facilitate the extraction of electrodes to the outside. Further, connection bumps can be formed on the exposed surfaces of the connection terminals 10 and the through-hole electrodes 7 if necessary.

By adopting such a structure, the terminal electrodes of the solid electrolytic capacitor can be formed on the same surface, the position of the terminal electrode is arbitrary, and other IC parts or the like are provided directly on the solid electrolytic capacitor. Can be placed. As a result, the wiring between components can be made very short, and ESR and ESL can be reduced. In addition, the flow of current in different directions is provided inside the solid electrolytic capacitor, which cancels the magnetic field and
An effect of significantly reducing SL can be obtained. By realizing such a structure, it is possible to obtain a solid electrolytic capacitor having excellent high frequency response.

Next, a method of manufacturing the solid electrolytic capacitor of the present invention will be described with reference to FIGS.

As the valve metal material, a foil obtained by processing a sheet of aluminum foil 3 having a porous portion 20 formed on one surface as shown in FIG. 4 is used. Next, as shown in FIG. 5, the connection terminal 10 and the through-hole electrode 7 are formed on the other surface of the aluminum foil 3.
The protective film 15 is formed except for the portion where is formed. At this time, as the material of the protective film 15, any one of epoxy resin, polyimide resin, silicon resin, acrylic resin, and phenol resin can be used, and can be formed by an optimum method depending on the material. As the coating method, dipping, spin coater,
Various methods such as screen printing and film adhesion can be selected.

Next, as shown in FIG. 6, a resist film 16 is formed on the aluminum foil 3 on which the protective film 15 is formed, except for the portions where the connection terminals 10 are formed and the portions where the through-hole electrodes 7 are formed on one surface of the aluminum foil 3. Form 17. Then, as shown in FIG. 7, a through hole 4 is formed at a predetermined position of the aluminum foil 3. In forming the through hole 4, the dimensional accuracy can be inexpensively selected by selecting an optimum method of the through hole diameter, the number of holes, or the like from any of a laser processing method, a punching processing method, a drill processing method, an electric discharge processing method and an etching processing method. Well-configured. Further, though not necessarily required, the through-hole hole 4 on one side having the protective film 5 formed thereon
By forming a chamfered portion on the edge of the dielectric film by wet etching or the like, the insulation reliability of the dielectric film 2 can be improved.

Next, as shown in FIG.
The insulating film 5 can be formed by forming an insulating paint on the inner wall of the electrode by an electrodeposition method. The insulating film forming process by the electrodeposition method can form the dense insulating film 5 uniformly, but the insulating film 5 can be formed slightly thin at the edge portion of the through hole 4 on the surface on which the dielectric film 2 is formed. There is a nature. As a means to solve this problem completely and realize higher insulation reliability, chamfering of the edge is effective, and in addition, insulation with a mixture of microgel, carbon fine particles and titanium oxide fine particles with high edge covering properties This can be solved by electrodeposition of the volatile resin. Here, the microgel has the effect of increasing the viscosity of the polymer by adding a polymer material having a particle size of 10 μm or less to the polymer, lowering the fluidity, and improving the edge covering property. However, 10
When electrodeposition is performed on the inner walls of fine through-holes 4 having a diameter of 0 μm or less, the mixed resin having a high edge-covering property alone may increase the thickness of the electrodeposition layer, and the through-holes 4 may be filled with the electrodeposited resin. . Therefore, the process of forming the insulating film 5 by electrodeposition is divided into two steps, and a resin having a high resistivity is thinly applied to the first layer, and then an insulation in which microgel having a high edge covering property, carbon fine particles and titanium oxide fine particles are mixed. By applying the conductive resin to the second layer, it is possible to form the insulating film 5 on the inner wall of the through hole 4 having a low insulation failure rate.

Next, as shown in FIG. 9, the resist film 17 is removed by a chemical solution, and as shown in FIG. 10, one surface of the aluminum foil 3 is dipped in a chemical conversion solution to form a dielectric film 2. After that, as shown in FIG. 11, the through hole 4 is filled with a conductive material to form the through hole electrode 7. Ag is used as an electrode material for forming the through-hole electrode 7.
It is possible to use a method in which a conductive adhesive containing conductive particles such as a paste or Cu paste is filled and then cured.

Further, as shown in FIG. 12, a solid electrolyte layer 6 is formed on the dielectric film 2. As a forming method, a composition containing a pi-electron conjugated polymer such as polypyrrole or polythiophene, and / or other conductive polymer is formed by chemical polymerization or electrolytic polymerization. The solid electrolyte layer 6 may be formed by electrolytic polymerization after pre-coating a conductive polymer by chemical polymerization, or may be formed only by chemical polymerization. Alternatively, the conductive polymer may be formed by electrolytic polymerization after applying and drying a suspension of the conductive polymer powder, or after impregnating manganese nitrate and thermally decomposing to form manganese dioxide. The conductive polymer may be formed by electrolytic polymerization. Furthermore, as a completely established solid electrolyte layer formation technology, there is a method of thermally decomposing manganese nitrate to form manganese dioxide. By making it a precise and freely controllable thickness, productivity and reliability can be improved. Can be improved.

Next, as shown in FIG. 13, the solid electrolyte layer 6 is formed.
A current collector layer 8 is formed on top. The current collector layer 8 has a laminated structure of a carbon layer and a silver paste layer using a suspension of carbon fine particles and a conductive adhesive, so that electric charges can be more efficiently extracted than the conductor polymer layer or manganese dioxide. is there.

Thereafter, as shown in FIG. 14, the resist 16 formed on the other surface is peeled off, and the removed aluminum foil 3 is removed.
The connection terminal 10 is formed in the opening. The connection terminal 10 can be formed by applying a conductive adhesive, electrolytic plating, or electroless plating. As the conductive adhesive, the one used for the through-hole electrode 7 can be used.

Further, as shown in FIG. 15, the exterior of the capacitor element 1 is covered with an epoxy resin 18 in order to improve the reliability by protecting it from electrical insulation, moisture resistance and external stress.
To form a finished capacitor element.

Even with the above-mentioned structure, the solid electrolytic capacitor of the present invention functions, but if it is desired to improve the reliability and electrical performance of the connection with the semiconductor component or electronic component connected to the capacitor portion, the connection terminal is required. It is desirable to form connection bumps 14 on the exposed surfaces of 10 and through-hole electrode 7.

By manufacturing the solid electrolytic capacitor by such a method, the solid electrolytic capacitor can be directly connected to the semiconductor component, and the solid electrolytic capacitor excellent in high frequency response can be easily produced.

(Embodiment 2) The invention according to claims 2 and 11 will be described with reference to Embodiment 2 of the present invention and FIGS. 16 and 17. FIG. 16 is a cross-sectional view showing the main manufacturing process of the solid electrolytic capacitor according to the second embodiment. In the previous step of the manufacturing method of the present invention, as in the first embodiment, the protective film 1 is formed at a predetermined position on the aluminum foil 3 whose one surface is etched.
5 (FIG. 5), and then the resist film 17 is formed (FIG. 6) except for the portion where the through hole 4 is formed, and then the through hole 4 is formed (FIG. 7). Subsequently, as shown in FIG. 16, after the insulating resin is completely filled in the through hole 4 by the electrodeposition method to form the insulating film 5, the laser is again applied so that the insulating resin remains on the inner wall of the through hole. A second through hole 4a is formed in the central portion of the insulating film 5 with a hole diameter smaller than that of the through hole 4 formed in the aluminum foil 3 by any one of the processing method, the punching method and the drilling method (FIG. 17). . By forming the insulating film 5 by such a method, it is possible to surely form the insulating film 5 on the inner wall of the fine through hole 4 with a uniform thickness.

Subsequent manufacturing steps are similar to those of the first embodiment to obtain a solid electrolytic capacitor (FIGS. 9-14).
Process). Further, by forming the connection bump 14 on the exposed surface of the connection terminal 10 and the through-hole electrode 7, it is possible to improve the reliability and electrical performance of the connection with the semiconductor component or the electronic component (FIG. 15).

As described above, the second embodiment
Since the through-hole electrode 7 becomes thin especially at the edge portion of the through-hole 4, the occurrence of insulation failure such as short-circuit with the aluminum foil 3 can be reduced, so that a solid electrolytic capacitor having excellent reliability can be produced. .

(Embodiment 3) The invention according to claim 4 will be described with reference to Embodiment 3 of the present invention and FIGS.

18 to 30 are sectional views showing the main manufacturing steps of the solid electrolytic capacitor of the present invention. In the manufacturing process of the present invention, as the valve metal material, an aluminum foil 3 having a porous portion 20 formed on one surface thereof as shown in FIG. 18 is used, and a portion on which the connection terminal 10 is formed on the other surface of the aluminum foil 3 is excluded. The protective film 15 is formed. Next, resist films 16 and 17 are formed (FIG. 19) on one surface and the other surface on which the protective film 15 is formed, and then through-holes 4 are formed (FIG. 2).
0). Subsequently, as shown in FIG. 21, an insulating resin 5 is formed inside the through hole 4 by an electrodeposition method, and then a step of removing the resist film 17 (FIG. 22) is performed to form the dielectric film 2 ( FIG. 23). The subsequent manufacturing process is performed in the same manner as in the first embodiment (FIGS. 24 to 29).
A solid electrolytic capacitor as shown in is obtained. Further, by forming the connection bumps 14 as in the first embodiment, a solid electrolytic capacitor having more excellent mountability can be obtained (FIG. 30).

As described above, the manufacturing method of the present invention can provide a manufacturing method by which a solid electrolytic capacitor having excellent insulation between electrodes can be obtained.

(Embodiment 4) The invention according to claim 4 will be described with reference to Embodiment 4 of the present invention and FIGS.

31 to 37 are sectional views showing the main manufacturing steps of the solid electrolytic capacitor of the present invention. In the manufacturing process of the present invention, the protective film 15 is formed at a predetermined position on the aluminum foil 3 on one side of which the porous portion is formed by etching as in the case of the first embodiment (FIG. 5). The resist films 16 and 17 except for the portions where the connection terminals 10 are formed and the portions where the through-hole holes 4 are formed on both surfaces.
After forming the through hole (FIG. 6), the through hole 4 is formed (FIG. 7), and thereafter, the insulating film 5 is formed on the inner wall of the through hole 4 (FIG. 8) and the resist film 17 is removed (FIG. 9). The dielectric film 2 is formed (FIG. 10).

Next, as shown in FIG. 31, a second resist film 19 is formed on the entire surface of the protective film 15 and the resist film 16 formed on the other surface of the aluminum foil 3, and then as shown in FIG. Then, the solid electrolyte layer 6 is formed on the dielectric film 2 and on the inner wall of the through hole 4, and then the second resist film 19 is peeled off from the aluminum foil 3 as shown in FIG.
Subsequent manufacturing steps are similar to those of the first embodiment (FIGS. 34 to 36), and a solid electrolytic capacitor as shown in FIG. 36 is obtained. Further, by forming the connection bumps 14 as in the first embodiment, a solid electrolytic capacitor having more excellent mountability can be obtained (FIG. 37).

By the manufacturing method of the present invention, it is possible to realize a manufacturing method of a solid electrolytic capacitor which can reduce the connection resistance between different kinds of electrode materials on the cathode side and short-circuit defects between the connection terminals.

[0052]

As described above, according to the method for producing a solid electrolytic capacitor of the present invention, a large capacity solid electrolytic capacitor which can be directly connected to a semiconductor component, is excellent in high frequency characteristics, and is excellent in insulation between electrodes is easily produced. be able to.

[Brief description of drawings]

FIG. 1 is a perspective view of a solid electrolytic capacitor according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the same.

FIG. 3 is an enlarged cross-sectional view of the relevant part.

FIG. 4 is a cross-sectional view of an aluminum foil with one side etched.

FIG. 5 is a cross-sectional view of the same aluminum foil with a protective film formed thereon.

FIG. 6 is a sectional view showing a state where a resist film is formed on the aluminum foil.

FIG. 7 is a sectional view showing a state where the through hole is formed.

FIG. 8 is a sectional view showing a state in which an insulating film is formed on the inner wall of the through hole.

FIG. 9 is a cross-sectional view showing a state where the resist film on one side is peeled off.

FIG. 10 is a sectional view showing a state in which the same dielectric film is formed.

FIG. 11 is a sectional view showing a state where a through-hole electrode is formed in the through-hole.

FIG. 12 is a sectional view showing a state in which a solid electrolyte layer is formed on the dielectric film.

FIG. 13 is a cross-sectional view showing a state where a current collector layer is formed on the solid electrolyte layer.

FIG. 14 is a sectional view showing a state in which the resist film is removed and a connection terminal is formed.

FIG. 15 is a cross-sectional view showing a state in which the same outer package and connection bumps are formed.

FIG. 16 is a cross-sectional view showing a state in which an insulating film is formed in a through hole according to the second embodiment.

FIG. 17 is a sectional view showing a state in which the second through hole is formed.

FIG. 18 is a cross-sectional view showing a state where protective films are formed on both sides of the aluminum foil according to the third embodiment.

FIG. 19 is a sectional view showing a state where a resist film is formed on the aluminum foil.

FIG. 20 is a sectional view showing a state where the through hole is formed.

FIG. 21 is a sectional view showing a state where an insulating film is formed on the inner wall of the through hole.

FIG. 22 is a cross-sectional view showing a state where the resist film on one surface is peeled off.

FIG. 23 is a sectional view showing a state in which the same dielectric film is formed.

FIG. 24 is a sectional view showing a state where a through-hole electrode is formed in the through-hole.

FIG. 25 is a sectional view showing a state in which a solid electrolyte layer is formed on the dielectric film.

FIG. 26 is a cross-sectional view showing a state where a current collector layer is formed on the solid electrolyte layer.

FIG. 27 is a cross-sectional view showing a state where the resist film on one side is removed.

FIG. 28 is a sectional view showing a state in which the connection terminal is formed.

FIG. 29 is a sectional view showing a state in which the same outer package is formed.

FIG. 30 is a cross-sectional view of a connection bump formed on the connection terminal.

FIG. 31 is a cross-sectional view showing a state in which a second resist film has been formed according to the fourth embodiment.

FIG. 32 is a cross-sectional view showing a state where the solid electrolyte layer is formed.

FIG. 33 is a sectional view showing a state in which the second resist film is peeled off.

FIG. 34 is a sectional view showing a state where a through-hole electrode is formed in the through-hole.

FIG. 35 is a cross-sectional view showing a state where a current collector layer is formed on the solid electrolyte layer.

FIG. 36 is a cross-sectional view showing a state where the resist film is removed and connection terminals are formed.

FIG. 37 is a cross-sectional view showing a state in which the same outer package is formed and connection bumps are formed on the connection terminals.

[Explanation of symbols]

1 Capacitor element 2 Dielectric film 3 aluminum foil 4 Through hole 4a Second through hole 5 insulating film 6 Solid electrolyte layer 7 Through-hole electrode 8 Current collector layer 10 connection terminals 15 Protective film 16, 17 resist film 18 Exterior 19 Second resist film 20 Porous part

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Katsumasa Miki             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Yuji Mido             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Ryo Kimura             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd.

Claims (21)

[Claims] 1. A protective film is formed on the other surface of an aluminum foil whose one surface is made porous except a portion where a connection terminal and a through-hole electrode are formed, and a connection between one surface and a protective film except a portion where a through-hole electrode is formed. After forming a resist film on the part where the terminal is formed, a through hole is formed on the part where the through hole electrode is formed, an insulating film is formed on the inner wall of this through hole, and the resist film on one side of the aluminum foil is removed to remove aluminum. A dielectric film is formed on the porous part of the foil, then a through hole electrode is formed in the through hole, and then a solid electrolyte layer is formed on the above dielectric film, and a current collector layer is further formed on the solid electrolyte layer. After removing the resist film at the part where the connection terminal of the protective film is to be formed, and then at the part where this resist film is removed and the exposed surface of the through-hole electrode, the connection end Manufacturing method of solid electrolytic capacitor forming child. 2. A protective film is formed on the other surface of the aluminum foil whose one surface is made porous except a portion where a connection terminal and a through hole electrode are formed, and a connection between the one surface and a protective film except a portion where a through hole electrode is formed. After forming a resist film in the part where the terminal is formed, form a through hole in the part where the through hole electrode is formed, and after filling this through hole with an insulating resin, the insulating resin is left on the wall surface of the through hole. Form a second through hole in
After that, the resist film on one surface of the aluminum foil is removed to form a dielectric coating on the porous portion of the aluminum foil, and then a through-hole electrode is formed in the through-hole, and then a solid electrolyte layer is formed on the above-mentioned dielectric coating. On the exposed surface of the through-hole electrode and the portion where the resist film is removed after removing the resist film on the portion of the protective film where the connection terminal is to be formed. Of manufacturing a solid electrolytic capacitor for forming a film. 3. A protective film is formed on the other surface of the aluminum foil whose one surface is made porous except a portion for forming a connection terminal, and a resist film is formed on one surface and the entire other surface on which the protective film is formed. After that, a through hole is formed in the portion where the through hole electrode is formed, an insulating film is formed on the inner wall of this through hole, and then the resist film on one side of the aluminum foil is removed to form a dielectric film on the porous portion of the aluminum foil. And then forming a through-hole electrode in the through-hole and then forming a solid electrolyte layer on the dielectric film, further forming a current collector layer thereon, and subsequently forming a connection terminal A method for manufacturing a solid electrolytic capacitor, which comprises forming a connection terminal on the exposed surface of a through-hole electrode and a portion where a connection terminal is formed after removing the resist film. 4. A protective film is formed on the other surface of the aluminum foil whose one surface is made porous except a portion where a connection terminal and a through-hole electrode are formed, and a resist film is formed on one surface and a portion where a connection terminal of the protective film is formed. After formation, a through hole is formed in the portion where the through hole electrode is formed, an insulating film is formed on the inner wall of this through hole, and then the resist film on one side of the aluminum foil is removed to form a dielectric film in the porous portion of the aluminum foil. After forming the body coating, and then forming the second resist film on the entire surface of the other surface, a solid electrolyte layer is formed on the dielectric coating and on the inner wall of the through hole, and then the second resist film is removed and then the through hole is formed. After forming a through-hole electrode in the hole, further forming a collector layer on the solid electrolyte layer, after removing the resist film of the portion forming the connection terminal of the protective film A method for producing a solid electrolytic capacitor, wherein a connection terminal is formed on a portion where a resist film is removed, a through hole electrode in a through hole and an exposed surface of a solid electrolyte layer. 5. The method for producing a solid electrolytic capacitor according to claim 1, wherein any one of epoxy resin, polyimide resin, silicon resin, acrylic resin and phenol resin is used as the protective film. 6. The method for producing a solid electrolytic capacitor according to claim 1, wherein a photosensitive resin or an organic film having adhesiveness is used as the resist film. 7. The method for producing a solid electrolytic capacitor according to claim 1, wherein any one of dipping, spin coater, screen printing and film bonding method is used as a method for forming the protective film and the resist film. 8. The method for producing a solid electrolytic capacitor according to claim 1, wherein an electrodeposition method is used as a method for forming an insulating film. 9. An insulating resin is formed as a first layer by an electrodeposition method as a method for forming an insulating film, and then an insulating resin obtained by mixing microgel, carbon fine particles and titanium oxide fine particles is used as a second layer. 5. The method for producing a solid electrolytic capacitor according to claim 1, wherein the solid electrolytic capacitor is formed as. 10. A laser machining method, a punching method, a drilling method, an electric discharge machining method, or an etching method is used as a method for forming a through hole.
5. The method for manufacturing a solid electrolytic capacitor as described in any one of 4 to 4. 11. The solid electrolysis according to claim 1, wherein any one of a laser machining method, a punching machining method, a drill machining method and an electric discharge machining method is used as a method for forming the second through hole. Capacitor manufacturing method. 12. The method for producing a solid electrolytic capacitor according to claim 1, wherein the edge of the through hole on the surface on which the dielectric film is formed is chamfered. 13. The method for producing a solid electrolytic capacitor according to claim 1, wherein a method of filling a conductive adhesive and curing the same is used as a method of forming a through-hole electrode. 14. The method of manufacturing a solid electrolytic capacitor according to claim 1, wherein a method of applying a conductive adhesive and curing the same is used as a method of forming the connection terminal. 15. A method of forming a connection terminal using either electroplating or electroless plating.
5. The method for manufacturing a solid electrolytic capacitor as described in any one of 4 to 4. 16. The solid electrolytic capacitor according to claim 1, wherein a composition containing a pi-electron conjugated polymer and / or a conductive polymer other than this is used as a material for forming the solid electrolyte layer. Production method. 17. The method for producing a solid electrolytic capacitor according to claim 1, wherein a method of forming a solid polymer layer by chemical polymerization and / or electrolytic polymerization of a conductive polymer is used as a method of forming the solid electrolyte layer. 18. The method for forming a solid electrolyte layer, which comprises applying and suspending a suspension of a conductive polymer powder, and then electrolytically polymerizing the conductive polymer to form the solid electrolyte layer.
4. The method for manufacturing the solid electrolytic capacitor as described in any one of 4 above. 19. The method for producing a solid electrolytic capacitor according to claim 1, wherein a method of thermally decomposing manganese nitrate to form manganese dioxide is used as a method of forming a solid electrolyte layer. 20. The method of forming a solid electrolyte layer according to claim 1, wherein a method of pyrolyzing manganese nitrate to form manganese dioxide and then electrolytically polymerizing a conductive polymer is used. A method for manufacturing a solid electrolytic capacitor as described in. 21. The solid electrolytic capacitor as claimed in claim 1, wherein a method of applying a suspension of carbon fine particles and a conductive adhesive is used as a method of forming the current collector layer. Production method.