JP2003089060A - Sand blasting method and abrasive component for sand blast machining - Google Patents

Abstract

PROBLEM TO BE SOLVED: To machine efficiently in a short time even if an abrasive of small particle size is used when drilling a hole in a machining substrate and performing sand blast machining such as pattern engraving and dicing and suppress the generation of static electricity to reduce the damage to the substrate by static electricity. SOLUTION: After masking a surface by resistant sand blast resist formed by printing such as screen printing or a photo process on the machining substrate, ceramic fine particles having specific gravity of 8 or more, hardness higher than that of the substrate to be machined, average particle diameter of 150 μm or less, and an electric resistance value of 1×10<-3> Ω/cm or less are used for the machining substrate as abrasive and are sprayed using high pressure gas of 0.02 MPa or more to suppress the generation of static electricity in a shorter time than a conventional method in order to perform pattern engraving on a surface of a basic material by sand blast machining.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a glass, a silicon wafer, a ceramic, a metal, which is used for electronic parts and the like.
Sand blasting method for performing pattern etching processing by sand blasting such as drilling, dicing, pattern engraving by spraying an abrasive using a high pressure gas on a substrate such as plastic or compound semiconductor or a film formed on the substrate And an abrasive composition for sandblasting.

[0002]

2. Description of the Related Art Conventionally, as a method for pattern cutting a substrate such as glass, silicon wafer, ceramic, metal, plastic, compound semiconductor by sandblasting, a dry film for sandblasting is generally used as shown in FIG. Then, in 2-1 a dry film for sandblasting is laminated on the substrate, in 2-2 a pattern such as a glass mask or a film mask is placed and exposed to ultraviolet rays, and in 2-3 the unexposed part is developed. After rinsing with a liquid to form a mask pattern on the substrate, a pattern cutting process is performed in 2-4 by spraying aluminum oxide powder or silicon carbide powder with a high pressure gas using a sandblasting device as shown in FIG. Came.

[0003]

However, in the method using the above-mentioned aluminum oxide or silicon carbide powder,
When the average particle size of the powder is larger than 150 μm, the sandblasting speed is fast and the processing can be done in a short time, but as is clear from Table 1, the processing speed decreases in proportion to the average particle size of the abrasive. The processing time is long and the processing cost tends to increase.

[0004]

[Table 1]

Glass, silicon wafer, ceramic,
When pattern cutting processing is performed on a substrate of metal, plastic, compound semiconductor, etc., the pattern width and the hole diameter to be cut tend to be small, and when cutting a small pattern, it is necessary to use powder with a fine particle diameter, Since the processing time tends to be very long, it is necessary to have a method capable of processing in a short time even if a fine abrasive is used.

In addition, when a highly insulating powder is used for making holes or pattern cutting a substrate for use in electronic parts, there is a problem that static electricity is generated and the processed substrate is destroyed by the static electricity.

[0007]

As a means for solving the above problems, in order to process a substrate in a short time, a ceramic powder having a hardness higher than that of the processed substrate, a specific gravity of 8 or more, and an average particle size of 150 μm or less is used. , By spraying onto a substrate such as glass, ceramic, metal, or plastic whose surface is masked with a sandblast resist resist formed by printing such as screen printing or a photo process using a high-pressure gas of 0.02 MPa or more. Pattern engraving is performed on the material surface.

The electrical resistance value is 1 × 10 ⁻³ Ω / c in order to prevent the processed substrate from being destroyed by the generation of static electricity during processing.
A conductive ceramic having a size of m or less is used.

[0009]

[Table 2]

[0010]

[Table 3]

It can be seen from Table 2 that when powder having a large specific gravity is used, it can be deeply processed in a short time even if the average particle diameter is as small as 10 μm. The use of small electrically conductive ceramic powders reduces the rate of static generation.

It has a specific gravity of 8 or more and an electric resistance value of 1 × 1.
In addition to W2C, WC, W2B5 and WSi2 listed in the table, W can be used as the ceramic powder of 0 ^-3 Ω / cm or less.
B, TaC, TaN, HfB2, TaB2, Mo2B,
Although there are MoB and the like, a ceramic containing tungsten is relatively inexpensive, has a large specific gravity and a small electric resistance, and is therefore preferable as an abrasive for sandblasting.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the sandblasting method of the present invention will be described below with reference to the drawings.

The blasting device used in the present invention is shown in FIG.
As described above, the blast device main body 31, the classification device 32 such as a cyclone, and the dust collector 35 are provided, and the abrasive material injection nozzle 20 is provided in the blast device main body.

The blasting device main body 31 is connected to the classifying device 32 by the main body conduit 34, the classifier is connected to the dust collector 35 and the dust collecting conduit 39, and the blasting device main body 31 is connected by the negative pressure from the dust collector 35. It is always in a negative pressure state with respect to the outside air, and the abrasive material injected from the abrasive material injection nozzle 20 is prevented from scattering from the blasting device main body 31.

The abrasive material sprayed from the abrasive material spray nozzle 20 with high pressure gas is blasted as a workpiece.
The abrasive flows from the blasting device main body 31 to the classifying device 32 due to the air flow due to the negative pressure generated by the dust collector 35, and the abrasives that can be used by the classifying device 32 such as a cyclone and the crushed abrasive and the work are scraped. The abrasive that can be separated into dust and used can be supplied to the abrasive tank 21 and supplied to the abrasive layer 12 of the abrasive supply device 10, and the crushed abrasive and the powder obtained by scraping the workpiece are collected by the dust collector 35. To be done.

The abrasive injection nozzle 20 has a nozzle drive unit 45.
Thus, the work substrate is moved at high speed in the left-right direction when viewed from the front of the main body, and the work substrate is slowly moved forward and backward by the roller conveyor 43 to uniformly cut the work substrate.

In the processing step, when a dry film for sandblasting is used as the masking pattern forming method, the dry film 11 for sandblasting is laminated on the processed substrate at 2-1 as shown in FIG.
Laminate at 2, and at 2-2, expose only the portion to be masked with ultraviolet rays to the ultraviolet rays, and place the portion to be processed by sandblasting with a glass mask or film mask 10 that is patterned so as not to be exposed to the ultraviolet rays. Two
At -3, the developer 14 is sprayed to remove the unexposed portion, and 2
-4, the specific gravity is 8 or more, the hardness is higher than that of the substrate to be processed, and the average particle size is 150 μm in the sandblasting device
Ceramic powder having an electric resistance value of 1 × 10 ⁻³ Ω / cm or less is used as an abrasive, and is 0.02MP.
Cutting is performed on the work substrate by spraying using a high pressure gas of a or higher.

At 2-5, the mask material on the substrate surface is removed by using a stripping solution.

When screen printing is used as a masking pattern forming method, a sandblasting resistant ink 2 is used on a screen plate on which a pattern is formed with a photosensitive emulsion on a screen plate, and a squeegee 5 is used to print on a processed substrate. Printing is performed, the ink is dried or cured, and then pattern cutting is performed by sandblasting.

As a sandblasting resistant ink for screen printing, a vinyl chloride paste resin is used as a raw material, a UV-curable urethane acrylate is used as a raw material, a two-component mixed type soft epoxy resin or urethane. There is one using resin as a raw material.

[0022]

EXAMPLES Examples of the sandblasting method of the present invention described above will be specifically described below.

BF-410 manufactured by Tokyo Ohka Kogyo Co., Ltd. as a dry film for sandblasting by using a DuPont laminator on a glass-epoxy resin laminated substrate having a thickness of 1 mm.
Is exposed to light with an exposure amount of 200 mJ using an exposure machine HMW-201B manufactured by Oak Co., Ltd. using a film mask, and developed with a 0.3% sodium carbonate aqueous solution using a small developing machine manufactured by Yako. Then, a hole pattern of 0.3 mm was formed on the substrate with a dry film for sandblasting.

Using a sandblasting apparatus as shown in FIG. 1, a processing pressure of 0.3 MPa, a nozzle distance of 50 mm, a nozzle speed of 10 m / min, and an average particle diameter of 18 μm as an abrasive material.
Sand blasting was performed using the tungsten carbide (WC).

It can be processed in about 1/8 the time as compared with the case where powder of aluminum oxide having an average particle size of 20 μm which has been generally used in the past is used as an abrasive, and when processed with aluminum oxide, static electricity is generated. A pinhole on the substrate was observed, but it was not seen at all when using tungsten carbide.

[0026]

EFFECT OF THE INVENTION A masking pattern is formed on the surface.
The specific gravity of the work substrate is 8 or more, and the hardness is higher than that of the processed substrate.
It has a high average particle size of 150 μm or less and an electrical resistance value of
1 x 10 ^-3Ceramic powder less than Ω / cm as abrasive
And use high pressure gas of 0.02MPa or more
Conventional aluminum oxide or carbonized by spraying
Compared to the case of using an abrasive such as silicon
Can be processed with minimal damage to the board due to
It becomes Noh.

[Brief description of drawings]

FIG. 1 is a side view showing an outline of a sandblasting device used in the present invention.

FIG. 2 is a process drawing when a photosensitive dry film is used as the masking of the present invention.

FIG. 3 is an explanatory diagram showing an outline of a masking method by screen printing according to the present invention.

[Explanation of symbols]

1 Processed Substrate 2 Sandblast Resistant Screen Ink 3 Screen Mesh 5 Squeegee 6 Abrasive Material + High Pressure Gas 10 Film Mask 11 Dry Film for Sandblasting 12 Dry Film for Sandblasting with Pattern 14 Developer 15 Stripping Solution 20 Abrasive Material Injection Nozzle 22 Laminate Roller 23 Spray nozzle 28 Abrasive material supply pipe (abrasive material supply hose) 30 Abrasive material supply device 31 Blast device main body 32 Classification device (cyclone) 33 Hopper 34 Main body conduit 35 Dust collector 39 Dust collecting conduit 40 Glass window 41 Abrasive material tank

Claims (2)

[Claims] 1. A base material such as glass, ceramic, metal, or plastic whose surface is masked by a sandblast resist resist formed by printing such as screen printing or a photo process, has a specific gravity of 8 or more and is processed into hardness. It is higher than the substrate, has an average particle size of 150 μm or less, and has an electric resistance value of 1 × 10 ⁻³ Ω / cm or less as a polishing material, and sprays it using a high-pressure gas of 0.02 MPa or more. A sand blasting method characterized by performing pattern engraving on the surface of a substrate by means of. 2. An abrasive composition containing the element tungsten as a chemical composition of the abrasive used in claim 1.