JP2007283438A - Blasting method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a blasting method having a high selection ratio, high processing rate of a layer to be processed, and small amount of shift. <P>SOLUTION: In the blasting method, a substrate or a laminate film to be laminated on the substrate is made to the layer to be processed, a resist layer is laminated on the processed surface so that the processed surface of the layer to be processed is partially exposed, and the layer to be processed is selectively processed by causing abrasive grains to collide with the side of the processed surface partially exposed by an air jet flow. The blasting method is characterized in that the abrasive grains are spherical or ellipsoidal. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technique of a blasting method for selectively processing abrasive particles by colliding with a substrate or a laminated film laminated on the substrate by an air jet.

Conventionally, fine abrasive grains (see FIG. 6) by an air jet are laminated on a substrate such as an optical waveguide substrate, a semiconductor substrate or a printed substrate, or an optical waveguide layer, a semiconductor layer or an electric circuit layer laminated on the substrate. (Hereinafter, “worked layer” will be described.) There is a technique of a blasting method that causes collision (see, for example, Patent Document 1). Usually, in the blast processing method, photolithography is performed to form a resist layer laminated on the processing surface of the processing layer into a desired pattern, and after forming the pattern, the abrasive grains collide with the processing surface of the processing layer by an air jet. A portion not covered with the resist layer is selectively processed.
JP-A-10-092775

  In the blast processing method, it is a problem to deeply process the layer to be processed, to accurately process the layer to be processed, and to shorten the processing time. However, it is difficult for conventional blasting methods including Patent Document 1 to solve all the above problems.

  FIGS. 7A and 7B are schematic views before and after performing the conventional blasting method. FIG. 7A shows a state before blasting, and FIG. 7B shows a state after blasting. FIG. 7 shows a substrate 10 as a layer to be processed, a processing surface 10a, a partially exposed processing surface 10a side (hereinafter referred to as a “processing portion”) 10b, a side surface of the processing portion 10b (hereinafter, “processing portion side surface”). 10c, the planned grinding location 11 indicating the location where grinding is planned, the resist layer 30 and the resist layer side surface 30b are shown. In the following description, a direction parallel to the processed surface 10a is defined as a lateral direction, and a direction perpendicular to the processed surface 10a is defined as a depth direction. In FIG. 7B, a part of the resist layer 30 in FIG. Further, in FIG. 7B, the amount of reduction in the lateral direction of the resist layer 30 after blasting is defined as a shift amount (hereinafter referred to as “shift amount”) A, and the amount by which the layer to be processed is ground in the depth direction. Is the processing depth (hereinafter referred to as “processing depth”) B, and the reduction amount of the film thickness of the resist layer 30 after blasting is referred to as the film thickness reduction amount (hereinafter referred to as “film thickness reduction amount”). Illustrated as C.

  In the conventional blasting method, the ratio of the processing rate of the substrate 10 to the processing rate of the resist layer 30 (hereinafter referred to as “selection ratio”) cannot be increased, and the film of the resist film 30 after blasting Since the thickness is reduced (see film thickness reduction amount C), the thickness of the resist layer 30 must be increased. In the conventional blasting method, the upper limit of the height of the selection ratio is limited to 10. For example, when a through hole is provided in a layer to be processed having a thickness of 1 mm, it is necessary to stack a thick resist layer 30 exceeding 110 μm. . If the resist layer 30 is thick, a pattern with high accuracy cannot be formed, and it becomes difficult to process the layer to be processed with high accuracy. Further, even if blasting is performed so as to form the planned grinding portion 11, the shift amount A increases as the processing depth B is increased, and the processing layer is processed deeply and the processing layer is processed with high accuracy. It becomes difficult to achieve both. Furthermore, in order to shorten the processing time, the processing rate may be increased. However, as the processing rate is increased, the shift amount A increases, the processing layer is processed deeply, the processing layer is processed with high accuracy, and It becomes difficult to achieve both reduction in processing time. As described above, in the conventional blasting method, it is difficult to deeply process the layer to be processed, to accurately process the layer to be processed, and to shorten the processing time.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a blasting method having a high selection ratio, a high processing rate of a layer to be processed, and a small shift amount.

  The inventors of the present invention diligently studied the above-mentioned problems, and when the sharp projection-like abrasive grains (hereinafter referred to as “projection-like abrasive grains”) are collided with the work layer by an air jet, the resist layer has a depth. It was speculated that the height of the selection ratio was limited by cutting in the direction. In addition, the present inventors presumed that when the protruding abrasive grains collide with the processing location, they are destroyed, the collision energy of the protruding abrasive grains diverges and decreases, and the processing rate of the layer to be processed decreases. Further, it was estimated that if the abrasive grains are the same size, the collision energy increases and the processing rate increases as the weight increases. Further, the present inventors, like the resist layer is shaved in the depth direction, the resist layer side face is shaved and receded in the lateral direction, and the side surface of the processing location is affected by the relationship between the protruding abrasive grains and the resist layer. It was estimated that the shift amount changed as the decrease amount increased or decreased. From the above estimation, the present inventors have found that the above problems can be solved by making the abrasive grains spherical or ellipsoidal, and have completed the present invention.

  Specifically, in the present invention, a substrate or a laminated film laminated on the substrate is used as a processing layer, and a resist layer is stacked on the processing surface so that a processing surface of the processing layer is partially exposed. In the blasting method of selectively processing the layer to be processed by causing the abrasive grains to collide with the partially exposed processing surface side, the abrasive grains are spherical or ellipsoidal It is a processing method.

  When the spherical or ellipsoidal abrasive grains are made to collide with a processing location, the selection ratio can be increased, the processing rate of the layer to be processed is increased, and the shift amount can be decreased. At this time, since the selection ratio can be increased and the shift amount can be reduced, the film thickness of the resist layer can be reduced, and the layer to be processed can be processed deeply and accurately. Therefore, it is possible to provide a blasting method having a high selection ratio, a high processing rate of the layer to be processed, and a small shift amount.

  In this invention, it is preferable that the said abrasive grain has the hardness more than the said to-be-processed layer.

  Since the abrasive grains have a hardness equal to or higher than that of the work layer, the work layer can be easily ground with the abrasive grains, so that the work rate of the work layer can be further increased. Therefore, it is possible to provide a blasting method with a higher processing rate of the layer to be processed.

In the present invention, the abrasive grains preferably _includes at least one Al ₂ O 3, WC or ZrO _2.

  Since the above material has high hardness and the work layer is easily ground with the abrasive grains, the work rate of the work layer can be further increased. Therefore, it is possible to provide a blasting method with a higher processing rate of the layer to be processed.

  In the present invention, the layer to be processed is preferably an optical waveguide substrate, a semiconductor substrate or a printed substrate, or an optical waveguide layer, a semiconductor layer, or an electric circuit layer laminated on the substrate.

The optical waveguide substrate, the semiconductor substrate or the printed circuit board, or the optical waveguide layer, the semiconductor layer, or the electric circuit layer laminated on the substrate are required to have particularly fine processing accuracy. Application of the blasting method according to is effective. Further, the optical waveguide substrate, the semiconductor substrate or the printed circuit board, or the optical waveguide layer laminated on the substrate, the semiconductor layer or the electric circuit layer, the layer to be processed is made of Al ₂ O ₃ , WC or ZrO _2. Since the hardness of the work layer is lower than the hardness of the abrasive grains and the work layer is easily ground with the abrasive grains, the work rate of the work layer is reduced. Can be higher.

  In the present invention, the resist layer preferably has a thickness of 1 μm or more and 400 μm or less.

  By making the resist layer thinner, the resolution of the resist layer can be increased, and processing with high accuracy becomes possible. Moreover, consumption of the resist material necessary for laminating the resist layer can be suppressed. Therefore, an economical blasting method can be provided.

  In the present invention, the ratio of the processing rate of the layer to be processed to the processing rate of the resist layer is preferably 10 or more and 400 or less.

  By making the selection ratio higher, the reduction of the upper surface and the side surface of the resist layer with respect to the processing layer is suppressed, the shift amount is reduced in the direction parallel to the processing surface, and the direction perpendicular to the processing surface Then you can deeply process. Accordingly, it is possible to provide a blasting method in which the processing accuracy of the processing layer is high and the processing depth is deeper.

  The present invention can provide a blasting method having a high selection ratio, a high processing rate of a layer to be processed, and a small shift amount.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to embodiment shown below.

(First embodiment)
In the first embodiment, a substrate or a laminated film laminated on the substrate is used as a processing layer, a resist layer is stacked on the processing surface so that a processing surface of the processing layer is partially exposed, and grinding is performed by an air jet. In the blasting method of selectively processing the layer to be processed by colliding grains with the partially exposed processing surface side, the abrasive grains are spherical or ellipsoidal. It is.

  A blasting method according to the first embodiment will be described with reference to FIG. FIG. 1 is a schematic process diagram illustrating a blasting method according to the first embodiment. FIG. 1 illustrates a substrate 10 as a layer to be processed, a processing surface 10a, a processing portion 10b, a resist layer 30, a pattern 30a, light 31, a photomask 32, a photomask pattern 32a, and an air jet 40.

  FIG. 1A shows a preparation process for blasting the substrate 10. In the preparatory step, cleaning for removing dirt such as dust, oxide film, and oil attached to the substrate 10 may be performed. The above-described cleaning is performed after the resist layer laminating step of FIG. 1B, which will be described later, after the pattern exposure step of FIG. 1C, after the pattern development step of FIG. It may be performed after the blasting process or after the resist layer removing process of FIG. Details of the substrate 10 will be described later.

  FIG. 1B shows a resist layer stacking step in which a resist layer 30 is stacked on the processed surface 10a. For example, as the resist layer 30, photosensitive materials such as Audil BF45Z (manufactured by Tokyo Ohka Kogyo Co., Ltd.), Audil BF410 (manufactured by Tokyo Ohka Kogyo Co., Ltd.), 55P036 (manufactured by Nichigo Morton Co., Ltd.), and 40P036 (manufactured by Nichigo Morton Co., Ltd.). The urethane rubber which has property can be mention | raise | lifted. Further, the resist layer 30 may be laminated on the processed surface 10a using a coating method or a spin coating method.

  FIG. 1C shows a pattern exposure process for forming a pattern 30 a on the resist layer 30. On the photomask 32, a photomask pattern 32a such as a semiconductor pattern, an optical waveguide pattern, or an electric circuit pattern is drawn in advance. When the resist layer 30 is irradiated with light 31 through the photomask 32, a pattern 30a is formed on the resist layer 30 according to the shape of the photomask pattern 32a. Thereby, a pattern 30 a such as a semiconductor pattern, an optical waveguide pattern, or an electric circuit pattern can be transferred to the resist layer 30.

  FIG. 1D shows a pattern development process for removing the pattern 30 a from the resist layer 30. For example, a chemical may be applied to the resist layer 30 and only the pattern 30a may be removed. The chemical is not particularly limited, but it is preferable that the chemical does not react with the substrate 10 other than the portion where the pattern 30a of the resist layer 30 is formed. Accordingly, a part of the processed surface 10a can be exposed according to the photomask pattern 32a of the photomask 32.

  In FIG. 1E, spherical or ellipsoidal abrasive grains (hereinafter, “spherical or ellipsoidal abrasive grains” are abbreviated as “spherical abrasive grains”) are caused to collide with the machining location 10 b by the air jet 40. It is a blasting process. For example, a blast device (not shown in FIG. 1) may spray spherical abrasive grains. Further, examples of the carrier gas that can be used as the air jet 40 include compressed air, carbon gas, nitrogen gas, and argon gas. The carrier gas is not particularly limited, but preferably does not react with the substrate 10, the resist layer 30, and the spherical abrasive grains. The spherical abrasive grains collide with the machining location 10b by the air jet 40 and grind the machining location 10b. Further, the portion of the processed surface 10a where the resist layer 30 is left is difficult to be ground with spherical abrasive grains. The jet speed of the air jet 40 is increased, the density of the spherical abrasive grains in the air jet 40 is increased, the difference between the hardness of the spherical abrasive grains and the hardness of the workpiece is increased, and the weight of the spherical abrasive grains is increased. As a result, the processing rate of the substrate 10 can be increased. Naturally, the longer the blasting time, the deeper the processing depth.

  In the blasting process of FIG. 1 (e), the cross section has a rectangular groove, a rectangular or cylindrical through hole (not shown in FIG. 1) or a bottom surface that penetrates the substrate 10 in the depth direction. A rectangular or cylindrical recess (not shown in FIG. 1) may be formed in the substrate 10.

  FIG. 2 is an enlarged image of abrasive grains used in the blasting method according to the first embodiment. In 1st Embodiment, it is preferable that the said abrasive grain has the hardness more than the said to-be-processed layer. In FIG. 1, since the spherical abrasive grains have a hardness equal to or higher than that of the substrate 10, the substrate 10 can be easily ground with the spherical abrasive grains, so that the processing rate of the substrate 10 can be further increased. Therefore, it is possible to provide a blasting method with a higher processing rate of the layer to be processed. Here, the hardness refers to Vickers hardness or New Mohs hardness, and the same applies to the following. The diameter of the spherical abrasive grains is preferably 0.1 μm or more and 100 μm or less. The details of the spherical abrasive will be described later.

  The advantage of the blast processing according to the first embodiment will be described with reference to FIG. 3A and 3B are schematic views before and after performing the blasting method according to the first embodiment. FIG. 3A shows a state before blasting, and FIG. 3B shows a state after blasting. FIG. 3 illustrates a substrate 10 as a layer to be processed, a processing surface 10a, a processing portion 10b, a processing portion side surface 10c, a resist layer 30, and a resist layer side surface 30b. FIG. 3B illustrates the shift amount X, the processing depth Y, and the film thickness reduction amount Z, and a part of the resist layer 30 in FIG. .

  Hereinafter, although presumed, the advantage of using a spherical abrasive grain is demonstrated. Since the abrasive grains according to the first embodiment are spherical or ellipsoidal, even if the spherical abrasive grains that collide with the resist layer 30 are bounced back by the resist layer 30, the resist layer 30 is difficult to be cut in the depth direction, and is selected. It is presumed that the ratio can be increased (see film thickness reduction amount Z in FIG. 3 and film thickness reduction amount C in FIG. 7). In addition, since the abrasive grains according to the first embodiment are spherical or ellipsoidal, the spherical abrasive grains that collide with the machining location 10b are not easily destroyed, and the collision energy of the spherical abrasive grains is not easily diminished and is not lowered. It is estimated that the processing rate of the substrate 10 can be increased. Alternatively, if the abrasive grains are the same size, the weight of the spherical abrasive grains is heavier than the weight of the conventional protruding abrasive grains, so that the collision energy of the spherical abrasive grains is increased and the processing rate of the substrate 10 is increased. It is estimated that Further, the resist layer side surface 30b is difficult to be scraped in the same manner as the resist layer 30 is hard to be shaved in the depth direction, and the processing portion side surface 10c is hardly reduced due to the relationship between the spherical abrasive grains and the resist layer 30, and the shift amount X (See the shift amount X in FIG. 3 and the shift amount A in FIG. 7).

  From the above, when the spherical abrasive grains are caused to collide with the machining location 10b, the selection ratio can be increased, the machining rate can be increased, and the shift amount X can be reduced. At this time, since the selection ratio can be increased and the shift amount X can be reduced, the thickness of the resist layer 30 can be reduced, and the substrate 10 can be processed deeply and with high accuracy. Therefore, it is possible to provide a blasting method having a high selection ratio, a high processing rate of the layer to be processed, and a small shift amount.

  In the first embodiment, the ratio of the processing rate of the layer to be processed to the processing rate of the resist layer is preferably 10 or more and 400 or less, and more preferably 110 or less. By increasing the selection ratio, reduction of the upper surface and side surfaces of the resist layer 30 with respect to the substrate 10 can be suppressed, the shift amount is reduced in the direction parallel to the processed surface 10a, and deeper in the direction perpendicular to the processed surface 10a. Can be processed. Accordingly, it is possible to provide a blasting method in which the processing accuracy of the processing layer is high and the processing depth is deeper.

  FIG. 1F shows a resist layer removing process for removing the resist layer 30. For example, a chemical may be applied to the resist layer 30 and the resist layer 30 may be removed. The chemicals are not particularly limited, but preferably do not react with the substrate 10. The substrate 10 can be selectively processed through the above steps.

  In 1st Embodiment, it is preferable that the said to-be-processed layer is an optical waveguide board | substrate, a semiconductor substrate, or a printed circuit board. Details of this point will be described later.

(Second Embodiment)
Hereinafter, the blasting method according to the second embodiment will be described with reference to FIG. FIG. 4 is a schematic process diagram illustrating a blasting method according to the second embodiment. FIG. 4 illustrates the substrate 10, the laminated film 20 as the layer to be processed, the processing surface 20a, the processing portion 20b, the resist layer 30, the pattern 30a, the light 31, the photomask 32, the photomask pattern 32a, and the air jet 40. . Hereinafter, differences from the blasting method according to the first embodiment will be described.

  FIG. 4A shows a laminated film laminating process in which the laminated film 20 is laminated on the laminated surface (not shown in FIG. 4) of the substrate 10. In the laminated film laminating step, the laminated film 20 is laminated on the substrate 10. Moreover, as a method of laminating the laminated film 20, a sputtering method, a vacuum evaporation method, a CVD method, an ion plating method, or a plating method can be given. Further, in the laminated film laminating step, the processed surface 20a may be cleaned.

In the second embodiment, the layer to be processed is preferably an optical waveguide layer, a semiconductor layer, or an electric circuit layer laminated on a substrate. Since the optical waveguide layer, the semiconductor layer or the electric circuit layer laminated on the substrate is required to have a particularly fine processing accuracy, it is effective to apply the blast processing method according to the second embodiment having a high selection ratio. Further, when the laminated film 20 is ground with spherical abrasive grains containing at least one of Al ₂ O ₃ , WC or ZrO ₂ , the hardness of the laminated film 20 and the substrate 10 of FIG. 1 is lower than the hardness of the spherical abrasive grains. Since the processing layer can be easily ground with the spherical abrasive grains, the processing rate of the processing layer can be further increased. In the first embodiment, the same advantages as described above can be obtained when the layer to be processed is an optical waveguide substrate, a semiconductor substrate, or a printed substrate.

Here, for example, as the optical waveguide substrate or optical waveguide layer, a substrate such as SiO ₂ , LiNbO ₃ , LiTaO ₃ , KNbO ₃ , KTiOPO ₄ or (LiNb _X Ta _1-X ) O ₃ (the substrate 10 in FIG. 1) is used. Or a laminated film 20 (provided that 0 ≦ X ≦ 1 is satisfied).

  Further, for example, as a semiconductor substrate or a semiconductor layer, a single crystal substrate such as Si or Ge (see the substrate 10 in FIG. 1) or a laminated film 20, a II-VI group compound such as CdTe, CdS, ZnSe, ZnO or the like (See the substrate 10 in FIG. 1) or the laminated film 20 or a substrate of a III-V group compound such as GaAs, GaAlAs, GaInNAs, InP, InGaAs, AlGaInN, AlInGaP, InGaAsP, InGaAlAs (the substrate 10 in FIG. 1). Or the laminated film 20 can be cited.

  Furthermore, for example, as a printed circuit board, a substrate such as glass epoxy, Teflon (registered trademark), polyimide, or ceramics (see the substrate 10 in FIG. 1) can be given. Further, for example, as the electric circuit layer, a laminated film 20 such as a metal layer or an insulating layer laminated on the printed circuit board can be exemplified.

  FIG. 4B shows a resist layer stacking step in which the resist layer 30 is stacked on the processed surface 20a.

  In the second embodiment, the resist layer preferably has a thickness of 1 μm or more and 400 μm or less, and more preferably 110 μm or less. By making the resist layer 30 thinner, the resolution of the resist layer 30 can be increased and high-precision processing becomes possible. Moreover, consumption of the resist material necessary for laminating the resist layer 30 can be suppressed. Therefore, an economical blasting method can be provided.

  FIG. 4E shows a blasting process in which the spherical abrasive grains are caused to collide with the exposed processing portion 20 b by the air jet 40.

In the second embodiment, the abrasive grains preferably _includes at least one Al ₂ O 3, WC or ZrO _2. Spherical _abrasive, Al ₂ O _3, WC or may be used as the main component one of ZrO _2, Al ₂ O _3, WC or may two or more of a mixture of ZrO ₂ as a main component. Since the above material has high hardness and the work layer is easily ground with spherical abrasive grains, the work rate of the work layer can be further increased. Therefore, it is possible to provide a blasting method with a higher processing rate of the layer to be processed. Here, the spherical abrasive grains only have to have a hardness equal to or higher than that of the laminated film 20, and the relationship between the hardness of the spherical abrasive grains and the hardness of the substrate 10 is not limited.

For example, when producing WC spherical abrasive grains, a mixture of WO ₃ and carburite is compression molded and carbonized in a two-stage rotary carbonization furnace to obtain WC powder. The molten WC powder is blown out in a mist form to produce WC spherical abrasive grains. Tungsten accounts for 92% or more of WC spherical abrasive grains, and most of the remainder is carbide. The spherical grain of WC has a particle size of 0.1 μm or more and 60 μm or less, a Vickers hardness of 1600 to 2000 (HV), and a new Mohs hardness of 10 to 12.

The spherical abrasive grains of ZrO ₂ have a Vickers hardness of 513 to 940 (HV) and a new Mohs hardness of 5 to 8. The Al ₂ O ₃ spherical abrasive grains have a Vickers hardness of 1800 to 2200 (HV) and a new Mohs hardness of 12 to 13.

  5A and 5B are schematic views before and after performing the blasting method according to the second embodiment. FIG. 5A shows a state before blasting, and FIG. 5B shows a state after blasting. Further, FIG. 5 illustrates the substrate 10, the laminated film 20 as the layer to be processed, the processed surface 20a, the processed portion 20b, the processed portion side surface 20c, the resist layer 30, and the resist layer side surface 30b. FIG. 5B shows the shift amount X, the processing depth Y, and the film thickness reduction amount Z, and a part of the resist layer 30 in FIG. .

  As in the first embodiment, when the spherical abrasive grains collide with the processing location 20b, the selection ratio can be increased, the processing rate of the laminated film 20 is increased, and the shift amount X can be reduced. . At this time, since the selection ratio can be increased and the shift amount X can be reduced, the thickness of the resist layer 30 can be reduced, and the laminated film 20 can be processed deeply and with high accuracy. Therefore, it is possible to provide a blasting method having a high selection ratio, a high processing rate of the layer to be processed, and a small shift amount.

  Note that two or more stacked films may be stacked on the substrate, and the stacked film positioned at the uppermost layer may be blasted as a layer to be processed (not shown in FIG. 5). At this time, the hardness of the spherical abrasive grains needs to be higher than the hardness of the laminated film located in the uppermost layer. Further, all laminated films may be blasted as processed layers. At this time, the hardness of the spherical abrasive grains needs to be higher than the hardness of all the laminated films. Alternatively, all the laminated films and the substrate may be blasted as processed layers. At this time, the hardness of the spherical abrasive grains needs to be higher than the hardness of all the laminated films and the substrate.

  The blasting method of the present invention can be used for fine processing for forming a pattern on a substrate or a laminated film laminated on the substrate.

It is a schematic process drawing explaining the blasting method which concerns on 1st Embodiment. It is an enlarged image of the abrasive grain used with the blast processing method concerning a 1st embodiment. It is the schematic before and behind implementing the blasting method which concerns on 1st Embodiment, (a) shows the state before blasting, (b) shows the state after blasting. It is a schematic process drawing explaining the blasting method which concerns on 2nd Embodiment. It is the schematic before and behind implementing the blasting method which concerns on 2nd Embodiment, (a) shows the state before blasting, (b) shows the state after blasting. It is an enlarged image of the abrasive grain used with the conventional blast processing method. It is the schematic before and behind implementing the conventional blasting method, (a) shows the state before blasting, (b) shows the state after blasting.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 10a, 20a Processing surface 10b, 20b Processing location 10c, 20c Processing location side surface 11 Planned grinding location 20 Laminated film 30 Resist layer 30a Pattern 30b Resist layer side surface 31 Light 32 Photomask 32a Photomask pattern 40 Air jet 50 Resist before processing Layer A, X shift amount B, Y Processing depth C, Z Film thickness reduction amount

Claims (6)

A substrate or a laminated film laminated on the substrate is used as a processing layer, a resist layer is stacked on the processing surface so that a processing surface of the processing layer is partially exposed, and the abrasive grains are partially exposed by an air jet. In the blasting method for selectively processing the layer to be processed by colliding with the processed surface side,
The blasting method, wherein the abrasive grains are spherical or ellipsoidal.   The blasting method according to claim 1, wherein the abrasive has a hardness equal to or higher than the layer to be processed. The blasting method according to claim 1, wherein the abrasive grains include at least one of Al ₂ O ₃ , WC, and ZrO ₂ .   4. The blast according to claim 1, wherein the layer to be processed is an optical waveguide substrate, a semiconductor substrate or a printed circuit board, or an optical waveguide layer, a semiconductor layer, or an electric circuit layer laminated on the substrate. Processing method.   5. The blasting method according to claim 1, wherein the resist layer has a thickness of 1 μm or more and 400 μm or less. The blasting method according to any one of claims 1 to 4, wherein a ratio of a processing rate of the processing layer to a processing rate of the resist layer is 10 or more and 400 or less.

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