JP2003086638A - Method for manufacturing tape carrier for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a tape carrier for a semiconductor device capable of solving peeling residue in a photoresist peeling process to obtain excellent performance. SOLUTION: In a method for manufacturing a tape carrier for a semiconductor device, after a copper wire 21 is formed on an insulating tape base material 3 including a copper foil by using a photoresist pattern 10, when an unwanted photoresist 1 is removed by a solution, ultraviolet rays 30 are irradiated to increase a resist peeling speed. As the ultraviolet rays 30 which are irradiated on the photoresist 1, light of a wavelength of 300 nm or over, preferably about 320 to 430 nm, is used.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a tape carrier for a semiconductor device such as a TAB tape carrier which is a precision electronic component.

[0002]

2. Description of the Related Art TA which is an electronic component for semiconductor packages
The B tape carrier is generally formed by bonding a copper foil to an insulating tape base material made of a polyimide resin insulating film in which via holes and the like are provided in advance, with or without an adhesive layer,
It has a structure in which a predetermined wiring pattern is formed on the copper foil, and then a plating layer is formed on the copper lead, which is a terminal portion of the wiring pattern, so as to provide stable bonding.

In this TAB tape carrier, as a method for forming a predetermined wiring pattern on a copper foil attached to an insulating tape base material, copper wiring is formed on a resin insulating tape base material with a copper foil by using a photoresist. The forming method is generally used.

The conventional method of manufacturing the TAB tape carrier will be described with reference to FIG. 1 according to the embodiment of the present invention. First, the photoresist 1 is applied to the copper foil 2 bonded to the insulating tape base material 3. Coating (resist coating step (a)), exposing and developing this to form a predetermined photoresist pattern 10 (exposure and developing step (b)), and the via portion 6 and the like from the side where the copper foil 2 does not exist. A back coating agent 4 for filling is applied (back coating step (c)), and the copper foil 2 is etched using the photoresist pattern 10 to form a copper wiring pattern 20 (etching step (d)). After that, the unnecessary photoresist 1 is removed with a solution (resist stripping step (e)), and the copper wiring (copper lead) 21 is plated with tin or gold (plating portion 5) (plating step (f)). It is formed through.

In the method of manufacturing the TAB tape carrier, in the resist stripping step (e) for removing the photoresist 1 which is no longer needed after the formation of the wiring pattern 20, it is necessary to remove both the photoresist 1 and the back coat agent 4 at the same time. There is. Usually, a cresol-novolac resin is used as the photoresist material, and an acrylic resin is often used as the back coat agent 4. These resins can be removed with a low-concentration alkaline aqueous solution such as caustic soda or caustic potash. However, in order to improve the peeling speed of the photoresist 1, the photoresist 1 is irradiated with ultraviolet rays 30 before the peeling, and then the alkaline aqueous solution is used. Removal methods are often used.

[0006]

However, in the method of peeling by irradiating the photoresist 1 with the ultraviolet rays 30 before peeling, an extremely minute peeling residue may be generated, and this residue is removed after the copper wiring pattern 20. There is a problem that it adversely affects tin plating, gold plating, etc.

Therefore, an object of the present invention is to provide a method of manufacturing a tape carrier for a semiconductor device, which can solve the above-mentioned problems, eliminate peeling residues in a photoresist peeling step, and obtain good performance.

[0008]

In order to achieve the above object, the present invention is configured as follows.

According to the first aspect of the present invention, after copper wiring is formed on the insulating tape base material with a copper foil by using a photoresist pattern, ultraviolet rays are irradiated when the unnecessary photoresist is removed with a solution. In the method of manufacturing a tape carrier for a semiconductor device, which is configured to increase the resist peeling speed,
The wavelength of the ultraviolet light with which the photoresist is irradiated is 300
It is characterized by using light of nm or more.

According to a second aspect of the present invention, a photoresist pattern is formed on an insulating tape substrate with a copper foil, a back coat agent for protecting the copper foil such as a via portion is applied, and then a copper wiring is formed by etching. After that, when removing the unnecessary photoresist with a solution, in the method of manufacturing a tape carrier for a semiconductor device, which is irradiated with ultraviolet rays to increase the resist peeling rate, the ultraviolet rays with which the photoresist is irradiated has a wavelength Is characterized by using light of 300 nm or more.

According to a third aspect of the present invention, in the method of manufacturing a tape carrier for a semiconductor device according to the first or second aspect, the ultraviolet light with which the photoresist is irradiated has a wavelength range of about 32.
It is characterized by using light of 0 to 430 nm.

According to a fourth aspect of the present invention, in the method of manufacturing a tape carrier for a semiconductor device according to any one of the first to third aspects, the photoresist is a positive type photoresist.

According to a fifth aspect of the present invention, in the method of manufacturing a tape carrier for a semiconductor device according to the fourth aspect, a cresol-novolac resin is used as a material of the photoresist, and the solution is a low concentration caustic soda. It is characterized by using an alkaline aqueous solution such as caustic potash.

<Points of the Invention> In the method of forming a resist pattern by exposing and developing using a positive photoresist, the area where the resist is removed is irradiated with ultraviolet rays, and the irradiated area is exposed to an alkaline solution. It melts and a pattern is formed. Then, etching is performed to form a wiring pattern. The unnecessary resist is removed with an alkaline solution, an organic solvent or the like. When removing the resist, there is a method of increasing the alkali solubility by irradiating with ultraviolet rays before removing the resist in the same manner as in the developing step to increase the resist removing rate.

Although this method is an excellent method which enables the photoresist to be safely peeled off and the lead time to be shortened, the inventor has various methods for further improving the tape quality. As a result of the study, in the method of irradiating the photoresist with ultraviolet rays before the stripping and stripping, an extremely minute stripping residue may be generated, and this residue may have an adverse effect on various plating steps for the copper wiring pattern. Came to the conclusion. And these residues
The present invention has been accomplished by finding out that it is influenced by the irradiation wavelength of ultraviolet rays from the investigation of the spectral spectrum of ultraviolet rays.

That is, it was confirmed that the resist was denatured by the irradiation of ultraviolet rays of short wavelength and the peeling performance of the material was adversely affected.

For example, in the case of a tin-plated TAB tape carrier, a TAB tape carrier manufactured through a resist stripping step of irradiating a resist with ultraviolet rays having a wavelength region of less than 300 nm and a wavelength region of less than 300 nm are not included. The plating appearance of both was compared with an TAB tape carrier prepared in the same manner by irradiating the resist with ultraviolet rays, that is, ultraviolet rays having a wavelength of 300 nm or more, by observing them with an electron microscope. As a result, the result of irradiation of ultraviolet rays including a wavelength region of less than 300 nm had a higher ratio of appearance defects such as abnormal plating deposition than that of the present invention not including the wavelength region of less than 300 nm.

This means that on the surface of the copper wiring pattern from which the resist has been peeled off, there are extremely minute resist peeling residues that are difficult to identify by ordinary Fourier transform infrared spectroscopy, electron microscopy, etc. It is presumed that the copper substitution reaction was adversely affected.

Therefore, according to the present invention, when the positive type photoresist is stripped by the irradiation of ultraviolet rays, for example, the irradiation wavelength of the ultraviolet rays irradiated to increase the resist stripping rate is set to 3
The wavelength of the TAB tape carrier is set to be 00 nm or more, which enables stripping without generating a minute amount of the resist stripping residue, and has good performance.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to examples.

FIG. 1 shows a manufacturing process of a TAB tape carrier to which the present invention is applied. Photoresist 1 is applied to copper foil 2 attached to insulating tape base material 3 (resist coating step (a)), and this is exposed and developed to form a predetermined photoresist pattern 10 (exposure and development step ( b)),
A back coat agent 4 for filling the via portion 6 and the like is applied from the side where the copper foil 2 does not exist (back coat step (c)),
A copper wiring pattern 20 is formed by etching the copper foil 2 using the photoresist pattern 10 (etching step (d)), and then the unnecessary photoresist 1 is removed with an alkaline aqueous solution (resist stripping step ( e)), and is formed through a step (plating step (f)) of plating the copper wiring (copper lead) 21 with tin or gold (plating portion 5). Then, in the resist stripping step (e), in order to improve the stripping rate of the photoresist 1, the photoresist 1 is irradiated with ultraviolet rays 30 before stripping and removed with an alkaline aqueous solution. However, unlike the conventional manufacturing method, the ultraviolet light with which the photoresist 1 is irradiated has a wavelength of 300 nm or more, and preferably has a wavelength range of approximately 320 to 320 nm.
Light of 430 nm is used.

Example 1 In the method of manufacturing the TAB tape carrier shown in FIG. 1, a cresol-novolak photoresist 1 manufactured by Company A was added to a polyimide tape with a copper foil.
Was applied for 3 μm, exposed by ultraviolet irradiation, and developed to form a photoresist pattern 10. After that, via part 6
In order to protect the copper foil, the back coat agent 4 of Company B was applied to the polyimide surface to a thickness of 30 μm. After forming the copper wiring pattern 20 by etching, the photoresist surface was irradiated with ultraviolet rays 30 to remove the photoresist 1 and the back coat agent 4 (back coat resist) using a 2% caustic soda aqueous solution. Light having a wavelength range of about 320 to 430 nm was used for the ultraviolet rays 30 with which the photoresist was irradiated. At this time, the exposure amount was 500 mJ / cm ² . Then, tin plating (plating portion 5) was applied to produce a TAB tape carrier.

The appearance of the TAB tape carrier thus produced was examined using an electron microscope for the inner leads for connecting to the chip. The appearance of the inner lead was normal without any problems such as abnormal precipitation.

<Embodiment 2> As in Embodiment 1, a cresol-novolak-based photoresist 1 of Company A is applied to the polyimide tape with copper foil to a thickness of 3 μm, and is exposed and developed by ultraviolet irradiation to form a photoresist pattern 10. did.
Then, in order to protect the copper foil such as the via portion 6, the back coating agent 4 of Company B was applied to the polyimide surface to a thickness of 30 μm. After forming the copper wiring pattern 20 by etching, the photoresist surface was irradiated with ultraviolet rays 30 to remove the photoresist 1 and the back coat agent 4 (back coat resist) using a 2% caustic soda aqueous solution. The ultraviolet light 30 irradiating the photoresist 1 has a wavelength range of about 32
Light of 0 to 430 nm was used. At this time, the exposure amount was set to 1000 mJ / cm ² unlike in Example 1. Then, tin plating (plating portion 5) was applied to produce a TAB tape carrier.

With respect to the TAB tape carrier thus produced, the outer appearance of the inner lead for connecting to the chip was examined by using an electron microscope. The appearance of the inner lead was normal without any problems such as abnormal precipitation.

<Comparative Example 1> In the same manner as in Example 1, a cresol-novolak-based photoresist 1 of Company A was applied to a polyimide tape with a copper foil in a thickness of 3 μm, exposed to ultraviolet rays, and developed to form a photoresist pattern 10. After the formation, the back coat agent 4 of Company B was applied to the polyimide surface to a thickness of 30 μm. After forming the copper wiring pattern 20 by etching, the photoresist surface is irradiated with ultraviolet rays 30,
The photoresist and back coat agent 4 (back coat resist) were removed using a 2% aqueous sodium hydroxide solution.
At this time, unlike Example 1, the ultraviolet light 30 with which the photoresist 1 was irradiated was light having a wavelength range of about 250 to 430 nm. At this time, the exposure amount was 500 mJ / cm ² .
Then, tin plating (plating portion 5) was applied to produce a TAB tape carrier.

With respect to the TAB tape carrier thus produced, the outer appearance of the inner leads for connecting to the chips was examined by using an electron microscope. The appearance of the inner lead was normal without any problems such as abnormal precipitation.

<Comparative Example 2> As in Example 1, a cresol-novolak photoresist of Company A was applied to a polyimide tape with a thickness of 3 μm on a polyimide tape with a copper foil, exposed to ultraviolet rays, and developed to develop a photoresist pattern 10. Was formed. After that, on the polyimide surface, Company B, back coat agent 3
It was applied to a thickness of 0 μm. After forming the copper wiring pattern 20 by etching, ultraviolet rays 30 are applied to the photoresist surface.
And the photoresist 1 and the back coat agent 4 are irradiated.
The (back coat resist) was removed using a 2% aqueous sodium hydroxide solution. UV light 30 for irradiating the photoresist 1
For this, light in the wavelength region of about 250 to 430 nm was used. At this time, the exposure amount was set to 1000 mJ / cm ² as in Example 2. Then, tin plating (plating portion 5) was applied to produce a TAB tape carrier. When the appearance of the inner lead of the produced TAB tape carrier was examined using an electron microscope, abnormal precipitation occurred on a part of the inner lead, and a poor appearance was observed.

<Embodiment 3> A cresol-novolak-based photoresist 1 manufactured by Company C was applied to a polyimide tape with a copper foil.
A photoresist pattern 10 was formed by applying the resist to a thickness of μm, exposing it by ultraviolet irradiation, and developing it. Then, in order to protect the copper foil such as the via portion 6, a back coating agent 4 made by D company was applied to the polyimide surface to a thickness of 60 μm. After the copper wiring pattern 20 was formed by etching, the photoresist surface was irradiated with ultraviolet rays 30 to remove the photoresist 1 and the back coating agent 4 (back coating resist) using a 1% caustic soda aqueous solution. The wavelength region of the ultraviolet light 30 with which the photoresist 1 is irradiated is approximately 320 to 430 nm.
Light was used. At this time, the exposure amount was different from that in Example 1,
It was set to 500 mJ / cm ² . Then, tin plating (plating portion 5) was applied to produce a TAB tape carrier. The appearance of the inner lead of the produced TAB tape carrier was examined using an electron microscope. The appearance of the inner lead was normal without any problems such as abnormal precipitation.

Comparative Example 3 5 μm of Cresol-Novolak photoresist 1 manufactured by Company C was applied to a polyimide tape with copper foil.
A photoresist pattern 10 was formed by applying the coating solution to a thickness of m, exposing it to ultraviolet rays, and developing it. Then, in order to protect the copper foil such as the via portion 6, a back coating agent 4 made by D company was applied to the polyimide surface to a thickness of 60 μm. After the copper wiring pattern 20 was formed by etching, the photoresist surface was irradiated with ultraviolet rays 30 to remove the photoresist 1 and the back coating agent 4 (back coating resist) using a 1% caustic soda aqueous solution. As the ultraviolet rays 30 with which the photoresist 1 is irradiated, light having a wavelength range of about 220 to 430 nm was used. At this time, the exposure amount is 50 as in the third embodiment.
It was set to 0 mJ / cm ² . Then, tin plating (plating portion 5) was applied to produce a TAB tape carrier. Fabricated TA
When the appearance of the inner lead of the B tape carrier was examined using an electron microscope, abnormal precipitation was found in the outer appearance of the inner lead.

Even when ultraviolet rays including a wavelength region of less than 300 nm are irradiated as shown in Comparative Example 1, abnormal plating appearance or the like does not occur if optimum irradiation conditions are selected. The optimum irradiation condition here is a range of light quantity required for the photoresist to be alkali-solubilized and equal to or lower than the light quantity at which the photoresist starts to deteriorate. However, this wavelength region varies depending on the resist type, and depending on the specifications of the tape, there is a problem in that the line speed is not raised to the desired speed, and more than the optimum amount of light is irradiated, for example, due to device restrictions. There is. By irradiating the photoresist 1 with ultraviolet rays not containing a wavelength of less than 300 nm, that is, ultraviolet rays having a wavelength of 300 nm or more, the resist can be peeled off without being affected by these restrictions and without being affected by the irradiation light amount. Becomes

[0032]

As described above, according to the present invention, for example, when a positive photoresist is stripped by irradiation with ultraviolet rays, the ultraviolet rays irradiated to increase the resist stripping rate have an irradiation wavelength of 300 nm or more, Preferably about 3
Since light having a wavelength of 20 to 430 nm is used, it is possible to perform stripping without generating a minute amount of resist stripping residue, and it is possible to provide a TAB tape carrier having good performance.

[Brief description of drawings]

FIG. 1 is a schematic view showing each step from a resist coating step to a plating step in a TAB tape carrier manufacturing method of the present invention.

[Explanation of symbols]

1 photoresist 2 copper foil 3 Insulating tape base material 4 Back coat agent 5 plating part 6 Beer part 10 Photoresist pattern 20 copper wiring pattern 21 copper wiring 30 UV

Claims (5)

[Claims] 1. When a copper pattern is formed on an insulating tape base material with a copper foil by using a photoresist pattern and then the unnecessary photoresist is removed with a solution, ultraviolet rays are irradiated to increase the resist peeling rate. In the method of manufacturing a tape carrier for a semiconductor device as described above, the wavelength of the ultraviolet light with which the photoresist is irradiated has a wavelength of 300.
A method of manufacturing a tape carrier for a semiconductor device, characterized by using light of nm or more. 2. A photoresist pattern is formed on an insulating tape base material with a copper foil, a back coat agent for protecting the copper foil such as a via portion is applied, and after forming a copper wiring by etching, it is unnecessary. In the method for manufacturing a tape carrier for a semiconductor device, which is adapted to irradiate ultraviolet rays to increase the resist peeling rate when removing the photoresist which has been removed with a solution, the ultraviolet rays with which the photoresist is irradiated have a wavelength of 300
A method of manufacturing a tape carrier for a semiconductor device, characterized by using light of nm or more. 3. The method for manufacturing a tape carrier for a semiconductor device according to claim 1, wherein light having a wavelength region of about 320 to 430 nm is used for the ultraviolet light with which the photoresist is irradiated. Tape carrier manufacturing method. 4. The method for manufacturing a tape carrier for a semiconductor device according to claim 1, wherein the photoresist is a positive photoresist. 5. The method for manufacturing a tape carrier for a semiconductor device according to claim 4, wherein a cresol-novolak resin is used as a material of the photoresist, and the solution is a low-concentration alkaline aqueous solution of caustic soda, caustic potash, or the like. A method for manufacturing a tape carrier for a semiconductor device, comprising: