JP2003086357A - Light emitting element and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic light emitting element with high reliability, of which a barrier film can be directly formed on a laminated structure, enabled to make the size small, and eliminate the drop of the emission rate of the light emitted outward, without deterioration caused by moisture absorption, without barrier film crack caused by film stress, and to provide a display device and lighting device using the same. SOLUTION: A buffer layer composed of organic compound is formed on a laminated structure formed by laminating at least an electrode, an organic light emitting layer, and an opposing electrode.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention comprises a light emitting region containing an organic material consisting of a hole transport layer, a light emitting layer and an electron injection layer between a pair of electrodes, and by injecting carriers from both electrodes into the light emitting layer. The present invention relates to an organic electroluminescence device (hereinafter, referred to as an organic EL device) that causes a light emitting layer to emit light.

[0002]

2. Description of the Related Art A flat panel display using an organic EL device and a flat panel light source have been actively researched and developed as next-generation display materials.

In an organic EL element, for example, as shown in FIG. 3, a transparent electrode 12 is formed on a glass substrate 10 using a transparent conductive material (ITO, SnO2, InO3, ZnO) which constitutes an anode. On the transparent electrode 12, the light emitting region 18 containing the organic material containing the organic material (the hole transport layer 1
4, a metal electrode 50 made of MgAg, Ca, Al, MgIn or the like, which constitutes a cathode, is formed on the light emitting layer 16, the electron transport layer 17) and the light emitting region 18. Then, the holes injected from the transparent electrode 12 into the light emitting layer 16 and the electrons injected from the metal electrode 50 into the light emitting layer recombine in the light emitting layer 16 to emit light. As shown in FIG. 3, the light emitted from the light emitting layer 16 passes through the transparent electrode and goes out through the glass substrate 10. Also, an opaque metal electrode 5
The light that has traveled to the 0 side is reflected by the transparent electrode 50, travels from there to the glass substrate side, passes through the glass substrate, and exits to the outside.
However, when the emitted light generated in such an EL element is emitted to the outside through the glass substrate 10, the emission rate is about 20%, and the remaining 80% is about the emission layer 1.
8 and the glass substrate 10 are guided and absorbed by the metal surface or emitted from the edge of the substrate.

E has been proposed in order to efficiently take out the light emission generated in the device to the outside of the device to improve the light emission efficiency.
The structure of the L element is shown in FIG.

As shown in FIG. 4, a transparent conductive material (ITO, SnO2, InO) forming an electrode is formed on a glass substrate 10.
3, ZnO, etc.) or MgAg, Ca, Al, Mg
An electrode 12 made of a metal material such as In is formed, and a light emitting region 18 containing an organic material is formed on the electrode 12.
A transparent electrode 51 is formed on (the hole transport layer 14, the light emitting layer 16, the electron transport layer 17) and the light emitting region 18. The transparent electrode 60 is not made of an opaque metal material as shown in FIG. 3, but is made of a transparent conductive film material made of ITO, SnO2, InO3, ZnO, or a complex of these oxides.

By using a transparent conductive film material for the transparent electrode 51, the light emitting region 1 is formed from the side of the cathode electrode which is the upper electrode of the device.
The emitted light generated in 8 can be taken out. Figure 4
As shown in, the light emitted from the light emitting layer 16 passes through the transparent cathode electrode 51 and goes out. When the electrode 12 is made of an opaque metal material, the light that has traveled to the anode electrode 12 side is reflected by the anode electrode 12, travels to the transparent electrode 60 side, and passes through the transparent electrode 60 to the outside. When the electrode is made of a transparent conductive film material, for example, by combining it with a reflective layer (scattering layer) (not shown) on glass, the light emitting layer 1
The light emitted at 6 and traveling to the anode electrode 12 side is reflected by the anode electrode 12 and proceeds to the transparent electrode 51 side from this, and the transparent electrode 6
It goes out through 0.

Since the emitted light generated in such an organic EL element is not emitted to the outside through the glass substrate 10, the emission rate to the outside is increased as compared with the configuration of FIG.

[0008]

However, in the organic EL device as shown in FIGS. 3 and 4, for example, device deterioration due to entry of moisture or oxygen into the electron injection layer or the organic layer constituting the light emitting region. There is a problem that it will occur. Since a structural change occurs due to the reaction with moisture or oxygen, a dark spot where a part of the element does not emit, grows, or causes a decrease in luminous efficiency. For example, in the case of a display using an EL element, the display quality is It gets worse. Therefore, in order to improve the durability and reliability of the organic EL element, the entire organic EL element must be sealed in order to prevent the reaction between the material used for the electron injection layer and the organic layer and moisture and oxygen. is there.

As shown in FIGS. 3 and 4, by covering the light emitting element with the caps 51 and 52 made of glass or aluminum, invasion of water is prevented, but the miniaturization (thinning) of the light emitting element is hindered. In addition, there is a problem that the ratio of emitted light to the outside is reduced.

Conventionally, two methods have been mainly studied so far regarding the sealing of the organic EL element. One is to seal a glass cap or the like to the organic EL element, and the other is to form a protective film on the outer surface of the organic EL element by using a vacuum film forming technique such as a vapor deposition method. .

As a method for sealing an organic EL element by sealing a glass cap or the like, a glass plate is provided outside the back electrode and the back electrode and the glass are used, as already used in the inorganic electroluminescence element. There is a method of enclosing silicone oil between the plates.

Regarding the method of forming a protective film and sealing the organic EL element, for example, in JP-A-6-96858, GeO, SiO, AlF3 or the like is applied to the outer surface of the organic EL element by the ion plating method. A method of forming is disclosed.

Further, Japanese Patent Application Laid-Open No. 7-212455 discloses a method of forming a protective film composed of a water-absorbing substance having a water absorption rate of 1% or less and a moisture-proof substance having a water absorption rate of 0.1% or less.

Further, in JP-A-10-41067, a film thickness 3 comprising a laminated film of at least two layers having an insulating compound as the lowermost layer is formed on the outer surface of the organic EL element.
A method of forming a protective film of μm to 30 μm is disclosed.

Generally, when a display or the like using an organic EL element is manufactured, a switching element and a light emitting region having a different emission color are separately formed on a substrate in addition to a laminated body constituting the organic EL element. The organic material (rib) and the like are formed. In this case, it is inevitable that many irregularities are formed on the substrate surface. To prevent the invasion of water and oxygen,
When an organic EL element is formed on the substrate and a protective film is formed on the laminated structure, the barrier film caused by the film stress is generated due to the unevenness on the substrate such as the switching element, the electrode, and the organic EL element formed on the substrate. There were problems such as cracking, peeling, and element destruction. Membrane stress increases by being laminated in multiple layers. Further, there is a problem that the barrier film is cracked or peeled off due to the dust adhering to the substrate, and the device is destroyed.

When forming a protective film on an EL element, there are problems that the organic EL element may be damaged or electrostatic breakdown may occur depending on the method of forming the barrier film.

The present invention has been made to solve the above-mentioned problems, and at least an electrode, an organic light emitting layer, and
By forming a buffer layer made of an organic compound on the laminated structure on which the counter electrode is formed, it becomes possible to directly form the barrier film on the laminated structure, and deterioration of the organic EL element due to entry of moisture or oxygen and It is an object of the present invention to realize a highly reliable and reliable organic EL element free from cracks in a barrier film due to film stress and deterioration of a light emitting element, and a display device and a lighting device using the same.

[0018]

A light emitting device of the present invention is a light emitting device having an electrode formed on a substrate, an organic light emitting layer, and a counter electrode, the light emitting device being formed on the counter electrode. The invention is characterized in that a buffer layer and at least one barrier film are formed on the buffer layer.

In a preferred embodiment of the present invention, the buffer layer has an organic material.

In a preferred embodiment of the present invention, the buffer layer has a film thickness of 0.3 μm or more and 5 μm or less.

Further, in a preferred aspect of the present invention, the buffer layer has a film thickness that is at least twice as large as the unevenness of the laminate structure formed on the substrate.

Further, in a preferred aspect of the present invention, the buffer layer covers the laminated structure and the unevenness of the surface of the laminated structure is 0.5 μm or less.

In a preferred embodiment of the present invention, the buffer layer has conductivity and has a volume resistance value of 10 ¹² Ω · cm or less.

In a preferred embodiment of the present invention, the barrier film contains at least one kind of oxide film, nitride film, metal thin film and diamond-like carbon film. In addition,
The oxide film has Si or Al.

Further, in a preferred embodiment of the present invention, the buffer layer has an oxide film.

In a preferred embodiment of the present invention, the oxide film is made of SiOx.

In a preferred embodiment of the present invention, S
The iOx layer has a film thickness of 15 nm or more and 1000 nm or less.

The display device of the present invention is a display device using any one of the light emitting elements described above.

The certifying device of the present invention is an illuminating device using any one of the light emitting elements described above.

The method for manufacturing a light emitting device of the present invention comprises a step of forming an electrode on a substrate, a step of forming an organic light emitting layer on the electrode, and a step of forming a counter electrode on the organic light emitting layer. A method of manufacturing a light emitting device, characterized in that it comprises at least a step of forming a buffer layer on the surface of the counter electrode and a step of forming at least one barrier film on the buffer layer.

In a preferred embodiment of the present invention, it is continuously carried out in a vacuum without being taken out into the atmosphere even once.

In a preferred embodiment of the present invention, the step of forming a buffer layer on the counter electrode and the step of forming at least one barrier film on the buffer layer include:
It is carried out under a temperature condition of 100 ° C. or lower.

[0033]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) The first embodiment of the present invention will be described below. 1 is a sectional view showing a first embodiment of a light emitting device according to the present invention. In FIG. 1, 101
Is a substrate, 102 is an electrode, 103 is a light emitting layer, 104 is a counter electrode, 105 is a buffer layer, 106 is a barrier film having a barrier property, and 107 is a switching element covered with ribs.

In this embodiment, at least a light emitting region 103 of an organic EL element and a counter electrode 104 are formed by vapor deposition on a glass substrate on which a switching element 107 made of a thin film transistor and a pixel electrode 102 made of ITO are formed. Form a structure. Light emitting area 103
Is composed of, for example, a light emitting layer (thickness 500A) made of Alq ₃ or the like and a hole transport layer (thickness 500A) (not shown) made of TPD. In this case, the counter electrode 104 has a high reflectance and has a function of causing the light emitting layer to efficiently emit light.
1 layer (thickness 1000 A).

The switching element 107 may be covered with an organic material for partitioning different light emitting regions, and in this case, there is a height difference of about 1.5 μm from the substrate surface.

The buffer layer 105 is formed by forming an organic conductive material of polyaniline sulfonic acid (PAS) on the counter electrode 104 to a thickness of about 3 μm by a spin coating method, and then heat treating it to harden it. As a result, the height difference on the surface of the laminated structure is about 0.5 μm.

The sheet resistance of the buffer layer is 10 ⁶ Ω · c.
It is about m.

A barrier film 106 is formed on the barrier layer. The barrier film is made of aluminum nitride and is formed at 3000 A by the sputtering method. The barrier film 106 has an excellent water vapor barrier property, and is 0.5 or less g / m ² / day.

The element structure used in the present invention is not particularly limited, and the following structure can be adopted. For example, there may be mentioned anode / light emitting layer / cathode anode / hole injection layer / light emitting layer / cathode anode / light emitting layer / electron injection layer / cathode anode / hole injection layer / light emitting layer / cathode. In the device having these configurations, each layer may be a laminate of a plurality of layers, or may be a mixture of a plurality of materials. These structures are roughly divided into substrate / electrode / light emitting region (hole injection layer, light emitting layer) / counter electrode.

Materials used for the light emitting layer include benzimidazole-based, benzothiazole-based, benzoxazole-based materials, metal chelated oxinoid-based compounds,
Examples thereof include stilhelsen compounds. The hole injection layer includes a fluorenone derivative, an anthraquinodimethane derivative, a diphenylquinone derivative, a thiopyran dioxide derivative, a heterocyclic tetracarboxylic acid, a carbodiimide, a fluorenylidene methane derivative, an anthraquinodimethane derivative, an anthrone derivative, and an oxalic acid derivative. A diazole derivative, a metal complex of a quinolinol derivative, a phthalocyanine, a distyrylpyrazine derivative and the like are considered.

In the case of an organic EL element, the light emitting layer is mainly formed by a resistance heating vapor deposition method, but an electron beam vapor deposition method, a sputtering method or the like may be used.

In the organic EL element, when the substrate to which the organic light emitting layer is attached is heated to a high temperature, the organic layer is deteriorated.
The counter electrode 104 needs to be formed at a low temperature. Further, when a metal thin film such as ITO is formed on the organic light emitting layer as a counter electrode by an evaporation method, a sputtering method, an electron beam evaporation method, or the like, a buffer layer is formed on the organic layer in order to reduce damage to the organic layer. It is preferable to form the transparent electrode after that. For the buffer layer, a thermally stable organic compound such as copper phthalocyanine may be used.

Since the counter electrode 104 is formed at a low temperature,
The adhesion between the counter electrode 104 and the base film is poor, and the counter electrode 10
4 peeling is likely to occur. In order to improve the adhesion between the counter electrode and the base film, it is preferable to form the counter electrode on the surface that has been subjected to a surface treatment such as plasma ashing.

In this case, the counter electrode 104 has only to have a high reflectance and a function of efficiently emitting light from the light emitting layer, and it is preferable to use a metal film of Al or an Al compound, silver or a silver compound. Further, as the silver compound, it is preferable to use an alloy of silver / palladium / copper (AgPdCu) or an alloy of silver / gold / copper (AgAuCu). Further, in the case of a so-called current injection type organic EL element in which an organic compound is used as a light emitting layer, the reflective electrode usually serves as a cathode, and a material having a high electron injection efficiency, that is, a material having a low work function is often used. As the cathode of the organic EL element, for example, an Al-Li alloy, a Mg-Ag alloy, or the like,
An alloy of a metal having a low work function but high reactivity (Li, Mg, etc.) and a metal having a low reactivity and stable (Al, Ag, etc.) may be used. Alternatively, a laminated electrode of a metal having a low work function such as Li / Al or LiF / Al or a compound thereof and a metal having a high work function, a laminated electrode of a metal such as ITO / Al / ITO and a transparent conductive film, and the like can be used.

When light is extracted from the counter electrode side to extract light, the counter electrode is preferably transparent or semitransparent. In this case, for example, ITO, Zn
Electrodes made of oxides such as O, MgAg metal thin films,
A laminated electrode including an oxide film and a metal thin film formed in a mesh shape can also be used.

As the method of forming the electrode 102, indium oxide, ITO containing tin oxide in indium oxide, or
A transparent conductive film such as ZnO or a metal electrode such as Al may be used, and a method such as sputtering, electron beam evaporation, or resistance heating evaporation may be used.

Any substrate can be used as long as it can be used for the light emitting device of the present invention, and a glass or polycarbonate sheet, a resin film such as polymethylmethacrylate, polyethylene terephthalate, or a silicon substrate can be used.

The buffer layer 105 is not limited to the above materials, and may be, for example, an organic material mixed with a conductive filler.

The method of forming the buffer layer 105 is not limited to the above method, and a vacuum evaporation method or the like may be used in addition to a coating method such as a printing method. Further, the curing method is not limited to heat curing, and UV curing by UV irradiation, EB curing by electron beam irradiation, or the like may be used.

The thickness of the buffer layer is preferably 0.3 μm or more and 5 μm or less, more preferably 0.3 μm.
It is preferably m or more and 10 μm or less.

Further, it is preferable that the height difference of the laminated structure formed on the substrate is twice or more.

Table 1 shows the results of the durability test in the present embodiment.

The barrier film 106 is not limited to aluminum nitride, but an inorganic film made of oxides or nitrides such as SiO _x and Al ₂ O ₃ and a diamond-like carbon film (DLC).
Other than the film, a metal film such as Al may be used.

Further, it may be a multilayer film of an organic layer and an inorganic layer, or a laminated film of inorganic films.

Further, the method of forming the barrier film 106 is not limited to the above method, and sputtering, electron beam evaporation, resistance heating evaporation, CVD, coating type, etc., vacuum arc method, electron shower method, anodic oxidation method, etc. You can use it.

In the first embodiment, by forming the buffer layer 105 on the laminated structure formed on the substrate, the unevenness of the surface of the laminated structure is reduced and the barrier formed thereon. It is possible to prevent the film from cracking.
Further, it is possible to reduce the influence of the stress applied to the laminated structure by the barrier film and the stress caused by other external factors on the laminated structure, and it is possible to prevent element destruction such as peeling of the counter electrode.

The conductivity of the buffer layer 105 is 10 ¹² Ω.
-It is preferably not more than cm. More preferably, 10 ¹⁰ Ω
cm or less.

It is said that the buffer layer 105 having electroconductivity can prevent the electrostatic breakdown of the EL element in addition to the effect as the auxiliary electrode of the counter electrode and the damage at the time of forming the barrier film, for example. There is also an effect.

As a result, it is possible to obtain a thin, lightweight, long-lifetime and highly reliable light emitting element, display device and lighting device.

(Second Embodiment) The second embodiment of the present invention will be described below. 2 is a sectional view showing a second embodiment of a light emitting device according to the present invention. In FIG. 2, 201
Is a substrate, 202 is an electrode, 203 is a light emitting layer, 204 is a counter electrode, 205 is a buffer layer, 206 is a barrier film having a barrier property, 207 is a switching element, and 208 is SiO.
_Two layers, 209 are reflective layers.

In this embodiment mode, the step of forming a light-emitting element is performed in a vacuum without being taken out into the air even once.

In this embodiment mode, the reflective layer 209, the switching element 207 including a thin film transistor, and I
A laminated structure in which at least a light emitting region 203 of an organic EL element and a counter electrode 204 are formed by a vapor deposition method is formed on a glass substrate on which a pixel electrode 202 made of TO is formed.

The light emitting region 203 is composed of, for example, a light emitting layer (thickness 500A) made of Alq ₃ or the like and a hole transport layer (thickness 500A) (not shown) made of TPD. Counter electrode 20
4 is a metal thin film (50A) made of MgAg in this case.
Transparent or translucent indium oxide (film thickness 1
000A) is laminated.

The switching element 207 is covered with an organic material for partitioning different light emitting regions and has a height difference of about 1 μm from the substrate surface.

The SiO ₂ layer (20
0A) is formed by a sputtering method without heating and can improve the adhesiveness with the buffer layer 205.

The buffer layer 205 is an organic material obtained by adding an ion-conductive conductivity-imparting agent obtained by compounding an acrylic material, for example, a polymer containing polyalkylene glycol as a main component with a perchlorate such as lithium perchlorate. After forming a conductive material on SiO ₂ by 5 μm on 208 by a printing method,
It is cured by electron beam irradiation. As a result, the height difference on the surface of the laminated structure is about 20 nm.
The formation of the buffer layer 205 has an effect of flattening the surface shape on the substrate. The sheet resistance of the buffer layer is about 10 ⁵ Ω · cm.

A barrier film 206 is formed on the barrier layer. For the barrier film, SiOx and acrylic resin are alternately used.
It is composed of a multi-layer film in which layers are laminated. SiOx has a barrier property, and 800 A is formed by the sputtering method. The acrylic resin is formed to a thickness of about 0.3 μm by vapor deposition polymerization. The barrier film 206 has an excellent water vapor barrier property and is 0.0
It is 5 or less g / m ² / day.

The light emitting region 203 made of an organic material has poor heat resistance and the counter electrode 20 formed on the light emitting region 203.
3, SiOx layer 208, buffer layer 206, and barrier film 2
06 is preferably formed at a temperature of 100 ° C. or lower.

Since the counter electrode 204 is formed at a low temperature,
The adhesion between the counter electrode 104 and the base film is poor, and the counter electrode 20
4 peeling is likely to occur. Further, since each laminated film such as the buffer layer and the barrier film formed on the counter electrode 204 is also formed at a low temperature, the adhesiveness of the interface between the respective layers is poor, and the film interface is likely to be peeled off due to the stress of each film. By forming a SiOx film between the counter electrode 204 and the buffer layer 205,
This has the effect of improving the adhesion between the counter electrode 204 and the buffer layer 205.

In the case of taking out emitted light from the counter electrode side and taking out the light above, the counter electrode is preferably transparent or semitransparent. In this case, for example, an electrode made of an oxide such as ITO or ZnO, a MgAg metal thin film, or a laminated electrode of an oxide film and a metal thin film formed in a mesh shape can be used.

As a method of forming the electrode 202, indium oxide, ITO containing tin oxide in indium oxide, or
A transparent conductive film such as ZnO or a metal electrode such as Al may be used, and a method such as sputtering, electron beam evaporation, or resistance heating evaporation may be used.

Any substrate can be used as long as it can be used for the light emitting device of the present invention, and glass or resin sheet such as polycarbonate sheet, polymethylmethacrylate, polyethylene terephthalate, or silicon substrate can be used.

The buffer layer 205 is not limited to the above materials, and may be, for example, an organic material mixed with a conductive filler.

The method of forming the buffer layer 205 is not limited to the above method.

In the case of taking out emitted light from the counter electrode side and taking out light, it is preferable that the buffer layer and the barrier film are transparent or semitransparent.

In the case of taking out the emitted light from the counter electrode side and taking out the light above, it is preferable that the buffer layer and the barrier film are transparent or semitransparent.

In this embodiment mode, the step of forming a light-emitting element is preferably performed in a vacuum without being taken out into the air even once. This makes it possible to obtain a highly reliable light emitting element without taking in water, oxygen, and the like.

For example, the barrier film 206 is not limited to SiOx, but may be an inorganic film made of an oxide such as AlON or Al ₂ O ₃ , a nitride, or a diamond-like carbon (DLC) film.

Further, it may be a multilayer film of an organic layer and an inorganic layer, or a laminated film of an inorganic film.

The method for forming the barrier film 206 is not limited to the above method, and sputtering, electron beam evaporation, resistance heating evaporation, CVD, coating type, vacuum arc method, electron shower method, anodic oxidation method, etc. may be used. You can use it.

[0082]

[Table 1]

Table 1 shows the result of the durability test in the present embodiment.

By covering with a glass cap or the like, the barrier property can be further improved.

In the second embodiment, by forming the SiOx film and the buffer layer 205 on the laminated structure formed on the substrate, surface irregularities of the laminated structure are reduced and formed on it. It is possible to prevent cracks in the barrier film. Further, it is possible to reduce the influence of the stress applied to the laminated structure by the barrier film and the stress caused by other external factors on the laminated structure, and it is possible to prevent element destruction such as peeling of the counter electrode. Further, since the buffer layer 205 has conductivity, there is an effect that the electrostatic breakdown of the element can be prevented in addition to the effect as the auxiliary electrode of the counter electrode.

As a result, it is possible to obtain a thin, lightweight, long-lifetime and highly reliable light emitting element, display device and lighting device.

[0087]

According to the present invention, a barrier layer made of an organic compound is formed on a laminated structure in which at least an electrode, an organic light emitting layer and a counter electrode are formed on a substrate, so that a barrier is directly formed on the laminated structure. It becomes possible to form a film, and a highly reliable organic EL device that is free from deterioration of the organic EL device due to moisture absorption, cracks of the barrier film due to film stress, and deterioration of the light emitting device.
An object is to realize an element, a display device using the element, and a lighting device.

Further, it is no longer necessary to provide the cap 52 made of glass or aluminum, which has been conventionally covered on the organic EL light emitting element in order to prevent the entry of moisture, so that the light emitting element can be downsized and the outside of the emitted light can be eliminated. It is possible to eliminate the decrease in the injection rate to the.

As a result, it is possible to obtain a thin, lightweight, long-lifetime and highly reliable light emitting element, display device and lighting device.

Further, in addition to the effect of the buffer layer 105 having conductivity as an auxiliary electrode of the counter electrode, for example,
There is also an effect that it is possible to prevent electrostatic breakdown of the EL element, such as preventing damage at the time of forming the barrier film, and improve the yield.

By forming a SiOx film between the counter electrode 204 and the buffer layer 205, the counter electrode 204
This has the effect of improving the adhesion of the buffer layer 205.

Therefore, it is an object of the present invention to realize a highly reliable organic EL element in which peeling of each film interface due to each film stress does not occur, and a display device and a lighting device using the same.

[Brief description of drawings]

FIG. 1 is a sectional view of a light emitting device according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a light emitting device according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a conventional general organic EL light emitting device.

FIG. 4 is a cross-sectional view showing a conventional general organic EL light emitting device.

[Explanation of symbols]

101 substrate 102 electrodes 103 light emitting area 104 counter electrode 105 buffer layer 106 barrier film

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 3K007 AB11 AB15 AB18 BA06 BB07                       CB01 CB02 CC01 DA01 DB03                       EB00 FA01 FA02                 5C094 AA15 AA31 AA36 AA42 AA43                       BA03 BA27 CA19 DA07 DA09                       DA13 EA04 EA05 EA06 EA07                       EA10 FA01 FA02 FA04 FB01                       FB02 FB12 FB15 FB20 GB10                       JA05 JA08 JA20                 5G435 AA14 AA17 AA18 BB05 CC09                       GG32 GG42 HH01 HH12 HH20                       KK05

Claims (15)

[Claims] 1. A light emitting device comprising an electrode formed on a substrate, an organic light emitting layer and a counter electrode, wherein a buffer layer formed on the counter electrode and at least 1 on the buffer layer. A light-emitting element having a barrier film of at least one layer formed. 2. The light emitting device according to claim 1, wherein the buffer layer contains an organic substance. 3. The light emitting device according to claim 1, wherein the buffer layer has a film thickness of 0.3 μm or more and 5 μm or less. 4. The light emitting device according to claim 1, wherein the buffer layer has a film thickness that is at least twice as large as the unevenness of the laminate structure formed on the substrate. 5. The light emitting device according to claim 4, wherein the buffer layer covers the laminated structure, and the unevenness of the surface of the laminated structure is 0.5 μm or less. 6. The buffer layer has conductivity and has a volume resistance value of 1
The light emitting device according to claim 1, wherein the light emitting device has a resistance of 0 ¹² Ω · cm or less. 7. The barrier film is at least one of an oxide film, a nitride film, a metal thin film, and a diamond-like carbon film.
7. The light emitting device according to claim 1, comprising at least one kind. 8. The light emitting device according to claim 1, wherein the buffer layer has an oxide film. 9. The light emitting device according to claim 8, wherein the oxide film is made of SiOx. 10. The SiOx layer has a thickness of 15 nm or more and 1000 or more.
The film thickness is less than or equal to nm.
The light emitting device according to. 11. A display device using the light emitting device according to claim 1. 12. An illuminating device using the light emitting device according to claim 1. 13. A method of manufacturing a light emitting device, comprising the steps of forming an electrode on a substrate, forming an organic light emitting layer on the electrode, and forming a counter electrode on the organic light emitting layer. And a step of forming a buffer layer at least on the surface of the counter electrode, and a step of forming at least one barrier film on the buffer layer. 14. The method for manufacturing a light emitting device according to claim 13, wherein the process is continuously performed in a vacuum without being taken out into the atmosphere even once. 15. The step of forming a buffer layer on the counter electrode and the step of forming at least one barrier film on the buffer layer are performed under a temperature condition of 100 ° C. or lower. The method for manufacturing a light emitting device according to claim 13.