JP2003085972A5 - - Google Patents

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Publication number
JP2003085972A5
JP2003085972A5 JP2001277675A JP2001277675A JP2003085972A5 JP 2003085972 A5 JP2003085972 A5 JP 2003085972A5 JP 2001277675 A JP2001277675 A JP 2001277675A JP 2001277675 A JP2001277675 A JP 2001277675A JP 2003085972 A5 JP2003085972 A5 JP 2003085972A5
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JP
Japan
Prior art keywords
input gate
reference voltage
signal
transition
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001277675A
Other languages
Japanese (ja)
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JP2003085972A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2001277675A priority Critical patent/JP2003085972A/en
Priority claimed from JP2001277675A external-priority patent/JP2003085972A/en
Publication of JP2003085972A publication Critical patent/JP2003085972A/en
Publication of JP2003085972A5 publication Critical patent/JP2003085972A5/ja
Pending legal-status Critical Current

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Claims (5)

入力信号のレベル遷移を検出するための入力ゲートと、
この入力ゲートの出力電圧の遷移を遅延させる遅延要素と、
前記入力ゲートの出力電圧を基準電圧と比較してタイミング信号を発生する比較回路と、
前記入力ゲートに与えられる電源電圧と同じ電源電圧を分圧して前記基準電圧を発生する基準電圧発生回路と、
を有することを特徴とするタイマ回路。
An input gate for detecting a level transition of the input signal;
A delay element that delays the transition of the output voltage of the input gate;
A comparator circuit that compares the output voltage of the input gate with a reference voltage to generate a timing signal;
A reference voltage generating circuit that divides a power supply voltage that is the same as the power supply voltage applied to the input gate to generate the reference voltage;
A timer circuit comprising:
前記入力ゲートは、前記入力信号の低レベル状態から高レベル状態への遷移を検出するためのCMOSインバータにより構成され、
前記遅延要素は、前記CMOSインバータの出力ノードとNMOSトランジスタとの間に挿入されている
ことを特徴とする請求項1記載のタイマ回路。
The input gate is constituted by a CMOS inverter for detecting a transition from a low level state to a high level state of the input signal,
2. The timer circuit according to claim 1, wherein the delay element is inserted between an output node of the CMOS inverter and an NMOS transistor.
前記入力ゲートは、前記入力信号の高レベル状態から低レベル状態への遷移を検出するためのCMOSインバータにより構成され、
前記遅延要素は、前記CMOSインバータの出力ノードとPMOSトランジスタとの間に挿入されている
ことを特徴とする請求項1記載のタイマ回路。
The input gate is constituted by a CMOS inverter for detecting a transition from a high level state to a low level state of the input signal,
2. The timer circuit according to claim 1, wherein the delay element is inserted between an output node of the CMOS inverter and a PMOS transistor.
前記基準電圧発生回路は、発生する基準電圧を外部から可変できる制御端子を有する
ことを特徴とする請求項1記載のタイマ回路。
2. The timer circuit according to claim 1, wherein the reference voltage generating circuit has a control terminal capable of changing a generated reference voltage from the outside.
メモリセルアレイと、このメモリセルアレイのワード線を選択駆動するロウデコーダと、前記メモリセルアレイのビット線データを検知増幅するセンスアンプと、前記メモリセルアレイのワード線の活性化タイミングを擬似的にモニターして疑似ワード線信号を生成する疑似ワード線回路と、前記疑似ワード線信号の出力から所定時間遅れて前記センスアンプを活性化するためのセンスアンプ活性化信号を発生するタイマ回路とを備え、
前記タイマ回路は、
前記疑似ワード線回路から発生される疑似ワード線信号を検出するための入力ゲートと、
この入力ゲートの出力電圧の遷移を遅延させる遅延要素と、
前記入力ゲートの出力電圧を基準電圧と比較してタイミング信号を発生する比較回路と、
前記入力ゲートに与えられる電源電圧と同じ電源電圧を分圧して前記基準電圧を発生する基準電圧発生回路と、
を有することを特徴とする半導体メモリ装置。
A memory cell array, a row decoder for selectively driving the word lines of the memory cell array, a sense amplifier for detecting and amplifying bit line data of the memory cell array, and the activation timing of the word lines of the memory cell array are monitored in a pseudo manner A pseudo word line circuit that generates a pseudo word line signal, and a timer circuit that generates a sense amplifier activation signal for activating the sense amplifier with a predetermined time delay from the output of the pseudo word line signal,
The timer circuit is
An input gate for detecting a pseudo word line signal generated from the pseudo word line circuit;
A delay element that delays the transition of the output voltage of the input gate;
A comparator circuit that compares the output voltage of the input gate with a reference voltage to generate a timing signal;
A reference voltage generating circuit that divides a power supply voltage that is the same as the power supply voltage applied to the input gate to generate the reference voltage;
A semiconductor memory device comprising:
JP2001277675A 2001-09-13 2001-09-13 Timer circuit and semiconductor memory Pending JP2003085972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001277675A JP2003085972A (en) 2001-09-13 2001-09-13 Timer circuit and semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001277675A JP2003085972A (en) 2001-09-13 2001-09-13 Timer circuit and semiconductor memory

Publications (2)

Publication Number Publication Date
JP2003085972A JP2003085972A (en) 2003-03-20
JP2003085972A5 true JP2003085972A5 (en) 2005-07-21

Family

ID=19102162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001277675A Pending JP2003085972A (en) 2001-09-13 2001-09-13 Timer circuit and semiconductor memory

Country Status (1)

Country Link
JP (1) JP2003085972A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006252721A (en) 2005-03-14 2006-09-21 Elpida Memory Inc Overdrive period controller unit and overdrive period determination method
FR2977077B1 (en) * 2011-06-27 2013-08-02 Commissariat Energie Atomique DELAY GENERATOR USING PROGRAMMABLE RESISTANCE BASED ON PHASE CHANGE MATERIAL
JP2024002737A (en) 2022-06-24 2024-01-11 ローム株式会社 Timer circuit, oscillator circuit, and semiconductor device

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