JP2003077664A - Matrix organic el display - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a matrix organic EL display capable of confirming the position of a specified abnormal section even in a dark room in a short time without increasing the number of processes, increasing inspection cost, changing the performance of the whole device, and causing a problem or capable of moving a visual field up to a specific place quickly. SOLUTION: This matrix organic EL display has such configuration that a specific mark pattern 6 is formed per predetermined number of elements from an element which becomes the end part or a reference position in a light emission display region 2 in the vicinity of the element in the light emission display region 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matrix type organic E to which electroluminescence based on an organic material is applied.
Regarding the L display.

[0002]

2. Description of the Related Art Conventionally, in a matrix type organic EL display, when an abnormal part (a part to be managed) is confirmed in an inspection process in each process, the position (pixel number etc.) from the end is counted or Position management must be performed on a stage having an accuracy equal to or higher than the pitch, and there are problems that work efficiency is deteriorated and the inspection device becomes expensive.

Particularly, when an abnormal portion is found during a lighting inspection in a dark room, it is necessary to temporarily turn on the illumination and then confirm the position of the abnormal portion, which is very inefficient.

As a means for confirming such an abnormal portion, for example, in Japanese Patent No. 2762995, a mark is formed on at least one of a lower electrode and an upper electrode in order to indicate a position in a specific cell. An organic EL device is described.

A method of providing a specific pattern serving as a marker in another device, for example, a liquid crystal display, has already been studied. For example, JP 2001-3
Japanese Patent No. 3810 discloses a liquid crystal display panel including an identification mark having information in at least one pixel area of the pixel area.

However, the methods described in these publications can deal only with a defective defect in a light emitting pixel, or the pattern itself (such as an electrode or an element isolation layer).
This has been a cause of restricting the original pattern formation, deteriorating the aperture ratio, and using a device having a complicated configuration, thus increasing the device cost. Furthermore, there is a possibility that the performance of the entire device may be adversely affected (or limited).

[0007]

The object of the present invention is to specify without increasing the number of steps, in a short time, without increasing the inspection cost, without changing the performance of the entire device, and without any problem even in a dark room. It is an object of the present invention to provide a matrix type organic EL display capable of confirming the position of an abnormal place that has been generated or quickly moving the visual field to a specific place.

[0008]

That is, the above object is achieved by the following constitution of the present invention. (1) A matrix-type organic EL display in which a specific marker pattern is formed near a device in a light emitting display region for each predetermined number of devices from an end or a reference position device in the light emitting display region. (2) The matrix type organic EL display according to (1), wherein the marking pattern is formed at the same time as the structure formed in the first patterning process. (3) The matrix type organic EL display according to (1) or (2), wherein the marking pattern is made of the same material as the structure formed in the first patterning process. (4) The structure formed in the first patterning process is a wiring structure (2) or (3) above.
Matrix type organic EL display. (5) In the matrix type organic EL display according to (1), the marking pattern emits light in the same manner as the elements in the light emitting display area. (6) The matrix type organic EL display according to any one of the above (1) to (5), wherein the sign pattern is formed in a dummy pixel formation region around a display region.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION In the vicinity of an element in a light emitting display area of a matrix type organic EL display of the present invention, a specific marker pattern is provided every predetermined number of elements from an element at an end or a reference position in the light emitting display area. It has been formed.

As described above, by forming the marker pattern in the vicinity of the element in the light emitting display area, the position of any element in the light emitting display area can be easily confirmed, and the abnormal portion (location to be managed) can be easily identified. Therefore, the work efficiency in the inspection process is improved.

Here, the marker pattern is an end portion of the normal light emitting display area (that is, either end of the display,
Normally it is either left or right than top / bottom. Although the pixels are displayed in a specific number from the pixel of (1), when the reference pixel is not at the end of the light emitting display area, the display may be performed by counting from the reference pixel and the specific position.

Further, in particular, by forming the marker pattern at the same time as the structure formed in the first patterning process, it can be used for all inspections, corrections, etc. in the subsequent steps, and the work efficiency in these steps is improved. Is greatly improved.

Specifically, in the case of a matrix type organic EL display, first, a wiring electrode and an auxiliary electrode (electrode protective layer)
A wiring structure made of a metal material such as is formed and patterned to form the wiring structure. Then, after that, a transparent electrode such as ITO is formed and patterned, and further, an edge cover, an insulating layer,
An element isolation structure, an organic layer, an electron injection electrode, etc. are sequentially formed. Therefore, it is advisable to form the marking pattern at the same time when the wiring structure is patterned using the metal material such as the wiring electrode and the auxiliary electrode in the first patterning step. In this way, if the marker pattern is formed in the first patterning step, the marker pattern can be used when inspection is required in all the subsequent steps, and the work efficiency is significantly improved.

Therefore, the marking pattern is formed by a structure which is patterned and formed in the first patterning process, preferably the same material as the wiring structure made of a metal material such as a wiring electrode and an auxiliary electrode (electrode protection layer). Preferably.

The wiring electrodes are usually a common line, a segment line, and an organic EL element arranged between these wiring electrodes to form a grid-shaped circuit. Then, an arbitrary organic EL element selected by the coordinates of the X axis and the Y axis is caused to emit light.
Configure a simple matrix type display.

For the wiring electrodes, it is preferable to use Al or an alloy containing Al as a main component. As an Al alloy,
Al and Si or Sc, Nb, Zr, Hf, Nd, T
a, Cu, Si, Cr, Mo, Mn, Ni, Pd, Pt
And alloys with one or more transition elements among W and the like. At that time, Al is preferably 90 at% or more, and particularly preferably 95 at% or more.

The sheet resistance of the wiring electrode is 1Ω / □.
It is particularly preferably 0.5Ω / □ or less. The lower limit is not particularly limited, but is usually about 0.1Ω / □.

The thickness of the wiring electrode is not particularly limited, but is preferably 10 to 2000 nm, particularly 20 to 100 nm.
It is preferably 0 nm, more preferably about 100 to 500 nm.

Further, it is preferable that the wiring electrode has a two-layer structure of an electrode layer and an electrode protective layer. The electrode layer is
It is preferable that the resistivity of the metal material is lower than the electrical resistivity of the metal material of the electrode protective layer (high electrical conductivity). Specifically, the resistivity of the electrode layer at 20 ° C. is 20
It is less than or equal to μΩ · cm, especially less than or equal to 10 μΩ · cm. The lower limit value is not particularly limited, but is usually 2.5 to 5
It is about μΩ · cm. The resistivity of the electrode layer may exceed the electrical resistivity of the electrode protective layer.

Examples of such metal materials include Al, Al and transition metals, especially Sc, Nb,
Zr, Hf, Nd, Ta, Cu, Si, Cr, Mo, M
Preferable examples include aluminum-based alloys which may contain n, Ni, Pd, Pt, W, etc., preferably 10 at% or less in total, particularly 5 at% or less, particularly 2 at% or less. Aluminum has a low resistance, and a good effect can be obtained when it is used as an electrode layer.

The electrode protective layer preferably has sufficient etching resistance against the etchant of the hole injecting electrode. Specifically, nitrides such as titanium nitride, molybdenum nitride, tantalum nitride, and chromium nitride; silicide compounds such as cobalt silicide, chromium silicide, molybdenum silicide, tungsten silicide, and titanium silicide; titanium carbide, doped silicon carbide, chromium, and the like. It can be preferably mentioned. Of these, nitride and chromium are preferable, and titanium nitride and chromium are particularly preferable. Titanium nitride has high corrosion resistance,
It has a great effect as an electrode protective layer. Further, the above-mentioned silicide, oxide, etc. are usually present in a stoichiometric composition, but they may be slightly deviated from this.

The wiring electrode can be formed by a vapor deposition method, a sputtering method or the like. The conditions for sputtering and vapor deposition are
It is similar to the electron injection electrode.

Next, the marking pattern of the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing an example of the marking pattern of the present invention. In the figure, the matrix type organic EL display has a substrate 1 and a display unit 2 formed of scanning lines 5a and data lines 5b on the substrate 1, and in the vicinity of the display unit 2. It has a marking pattern 6. The marker pattern 6 is formed and arranged for each predetermined number of elements from the element at the end or the reference position in the light emitting display area 2. That is, in the illustrated example, the left end portion in the light emitting display area 2 is set to 00, and from there, the X direction, that is, 10 ... 230,240 for every 10 pixels in the data line.
And the number of pixels is displayed as a number.

At this time, if the marking pattern 6 is formed simultaneously with the structure formed in the first patterning process, for example, the scanning lines 5a and the data lines 5b which are wiring electrodes, this marking pattern is formed in the subsequent steps. It can be used and work efficiency is greatly improved. In the illustrated example, the wiring electrode patterns 5a and 5b and the marking pattern 6
Although they appear to overlap with each other, they are formed in such a position and size that they do not actually contact each other.

At this time, the marker pattern 6 is preferably formed and arranged in the dummy pixel formation region 7 around the light emitting display region 2. The dummy pixel formation region 7 is provided in order to secure a necessary repeated pattern in the pixel formation process in the light emitting display region 2, and is formed similarly to the pixels in the light emitting display region 2, but the light emitting display region 2 It is formed outside and is not actually driven. Therefore, by utilizing such a surplus area, it is not necessary to provide an extra space for the marker pattern 6 and the display is not made too large.

FIG. 2 is a schematic plan view showing another form of the display of the present invention. In this example, the marker pattern is represented by a symbol (arrow) instead of a numeral. Although the symbol is an arrow in this example, any symbol or design pattern may be used as long as it can index the position of a specific pixel. The other components are the same as those in FIG. 1, and the same components are designated by the same reference numerals and the description thereof will be omitted.

The marker pattern of the present invention may utilize a dummy electrode. That is, in order to suppress the reflection of external light by the electrodes or the wiring electrodes and improve the contrast, there are cases where the contrast is secured by a circularly polarizing plate having a polarizing layer and a retardation layer laminated. However, in the non-wiring part, even if there is a circularly polarizing plate, since there is no reflective layer, the structure inside the substrate can be seen within the range of the transmittance of the circularly polarizing plate. Could not be achieved, which was a hindrance to uniform appearance.

Therefore, a method of forming a dummy electrode in a region visible from the outside even in such a non-light emitting portion to make the appearance uniform is proposed by the present inventor in Japanese Patent Application No. 2000-401.
Considered in No. 492.

FIG. 3 is a schematic plan view showing a configuration example of such a dummy electrode. In the self-luminous display module of the illustrated example, a display section 2 in which light emitting areas to be pixels are gathered on a substrate 1 and a display opening section 8 or a region in which a polarizing layer and a retardation layer are arranged except for the display section 2. 3, that is, a blank area. Except for the display portion 2, the wiring electrodes 5a and 5b drawn from the display portion 2 are provided in the display opening 8 or the region 3 where the polarizing layer is arranged.
And a dummy metal layer 4.

As described above, the display unit 2 which can be recognized from the outside
By disposing the metal thin film in the display opening 8 or the region 3 where the polarizing layer and the retardation layer are arranged (cathode + wiring electrode + dummy metal layer), a circularly polarizing plate (not shown) The effect can be obtained uniformly, and a uniform display screen can be obtained. Further, when there is a recognizable gap between the wirings, it is more effective to form the dummy metal layers 4a and 4b between the wiring electrodes 5a and 5b. In the figure, the gap between the display section 2, the display opening 8 or the region 3 where the polarizing layer and the retardation layer are arranged and the dummy metal layer 4 is
It is exaggerated to make it easier to see, but it is actually difficult to see.

In the case of forming such a dummy metal layer (electrode) 4, for example, by providing the notch 4c at the position of the dummy electrode corresponding to a specific pixel as described above, the same effect as the above-mentioned marker pattern can be obtained. be able to. Also,
The pattern between the normal wirings 5 has a shape as shown in FIG. 4A. However, as shown in FIG. 4B, the wirings 5 are formed in the dummy metal layer 4 sandwiching the wiring 5 connected to a specific pixel. It is also possible to provide cutout portions 41 that face each other with sandwiching them and use this as a marking pattern. If such a dummy electrode is used as a marker pattern, the appearance is made uniform and the appearance is improved.
The effect of improving the inspection efficiency in the work process can also be obtained. Moreover, there is no need to provide a space for the sign pattern or a process, and the sign pattern can be formed at low cost and in a small space.

Further, the dummy metal layer is preferably made of the same material as the wiring electrode, the metal electrode (cathode), especially the wiring electrode. By using the same material, the dummy metal layer forming step and the wiring electrode / metal electrode forming step can be shared. Therefore, it is usually formed by the first patterning process, and the merit in the manufacturing process described above can be enjoyed.

For the details of the dummy metal layer, refer to the above specification.

In the present invention, the marking pattern may be formed similarly to the light emitting element (pixel). In this way, by forming the marker pattern in the same manner as the light emitting element, it is possible to emit light in the same manner as the element in the light emitting display area, and even in the inspection process in a dark environment such as when confirming the issuing state of the pixel. It can be used as a marker.

Even in this case, the marker pattern can be formed in the same step as the pixel, and it is not necessary to provide a new step. Also, the shape may be a number or a specific symbol as in the above.

When the marking pattern is formed in the same manner as the light emitting element (pixel), its wiring electrode may be formed in the same manner as the pixel. Then, similarly to a normal display, the marking wiring electrode is formed up to the electrode pad connection region at the end of the substrate to form a connection terminal. The formed labeling connection terminal is connected to an electrode pad (connector) arranged on the inspection process jig, and is supplied with power and emits light as necessary. However, when it is used as a product, it is not connected to the electrode of the connection pad and is not driven.

As described above, it is possible to easily emit light during the inspection process as needed, and when it is driven as an actual product, it is disconnected from the drive circuit and may be erroneously driven. It does not adversely affect.

Next, the organic EL element preferably used in the display module of the present invention will be described.

As the electron injecting electrode, a substance having a low work function is preferable, and examples thereof include K, Li, Na, Mg, La and C.
e, Ca, Sr, Ba, Al, Ag, In, Sn, Z
It is preferable to use a simple metal element such as n or Zr, or a binary or ternary alloy system containing them in order to improve stability. As an alloy system, for example, Ag / Mg (A
g: 0.1 to 50 at%), Al.Li (Li: 0.01
˜14 at%), In.Mg (Mg: 50-80 at%),
Al.Ca (Ca: 0.01 to 20 at%) and the like are preferable. The electron injection electrode may be used also as the wiring electrode, or may be formed separately. The electron injection electrode can be formed by a vapor deposition method or a sputtering method.

The thickness of the electron injecting electrode thin film may be a certain thickness or more capable of sufficiently injecting electrons, and is 0.1 nm or more,
The thickness is preferably 1 nm or more. The upper limit value is not particularly limited, but the film thickness is usually about 1 to 500 nm.

As the electron injecting layer for improving the luminous efficiency, an inorganic electron injecting layer having a high resistance is preferably provided. An insulating alkali metal compound such as LiF or Li ₂ O, Li ₂ MoO ₄ , RuO ₂ : Li ₂ O, or the like can be used for the high-resistance inorganic electron injection layer. When forming such an electron injection layer, the electron injection electrode may be a normal low resistance metal such as Al.

The high resistance inorganic electron injecting and transporting layer has a thickness of 0.2 to
It is preferable to have a film thickness of 30 nm, and 0.2 to 2
It is particularly preferable to have a film thickness of 0 nm. If the thickness of the high-resistance inorganic electron injecting and transporting layer is less than 0.2 nm or more than 30 nm, the electron injecting function cannot be sufficiently exhibited.

The hole injection electrode usually emits light from the substrate side.
The transparent light is semi-transparent and has a transparent structure.
Pole is preferred. As a transparent electrode, ITO (tin-doped acid)
Indium oxide), IZO (zinc-doped indium oxide)
), ZnO, SnO₂, In₂O ₃Etc.
Preferably ITO (tin-doped indium oxide), IZO
(Zinc-doped indium oxide) is preferred. ITO is
Usually In₂O₃And SnO in stoichiometric composition,
The amount of O may be slightly deviated from this.

The hole injecting electrode has an emission wavelength band, usually 3
50 ~ 800nm, especially the light transmittance for each emitted light is 50
% Or more, particularly preferably 60% or more. Normal,
Since the emitted light is extracted through the hole injecting electrode, if the transmittance thereof is low, the light emission itself from the light emitting layer is attenuated, and the luminance required as a light emitting element tends to be not obtained. However, when the emitted light is extracted from only one side, the side to be extracted may be the above or more.

The thickness of the hole injecting electrode may be a certain thickness or more capable of sufficiently injecting holes, preferably 5
The range of 0 to 500 nm, preferably 50 to 300 nm is preferable. The upper limit is not particularly limited, but if it is too thick, peeling or the like may occur. If the thickness is too thin, there are problems in film strength during production, hole transport ability, and resistance value.

The hole injecting electrode layer can be formed by a vapor deposition method or the like, but is preferably formed by a sputtering method.

The organic layer of the organic EL element is as follows.

A fluorescent substance, which is a compound having a light emitting function, is used for the light emitting layer. Examples of such a fluorescent substance include at least one selected from compounds such as those disclosed in JP-A-63-264692, such as quinacridone, rubrene, and styryl dyes. Further, a quinoline derivative such as a metal complex dye having 8-quinolinol such as tris (8-quinolinolato) aluminum or a derivative thereof as a ligand,
Tetraphenyl butadiene, anthracene, perylene,
Examples include coronene and 12-phthaloperinone derivatives. Furthermore, the phenylanthracene derivative described in JP-A-8-12600 and the tetraarylethene derivative described in JP-A-8-12969 can be used.

Such a fluorescent substance can be used as a dopant in combination with a host substance capable of emitting light by itself. In that case, the content of the fluorescent substance in the light emitting layer is 0.01 to 10% by mass, and further 0.1 to 5%.
It is preferably mass%. When used in combination with the host material, the emission wavelength characteristic of the host material can be changed, light emission shifted to a long wavelength is possible, and the light emission efficiency and stability of the device are improved.

The host substance is preferably a quinolinolato complex, and more preferably an aluminum complex having 8-quinolinol or its derivative as a ligand. Such an aluminum complex is disclosed in JP-A-63-26469.
No. 2, JP-A-3-255190, and JP-A-5-7077.
No. 3, JP-A-5-258859, JP-A-6-2158.
Those disclosed in No. 74 and the like can be mentioned.

Specifically, first, tris (8-quinolinolato) aluminum, bis (8-quinolinolato) magnesium, bis (benzo {f} -8-quinolinolato) zinc, bis (2-methyl-8-quinolinolato) aluminum. Oxide, tris (8-quinolinolato) indium,
Tris (5-methyl-8-quinolinolato) aluminum, 8-quinolinolatolithium, tris (5-chloro-)
8-quinolinolato) gallium, bis (5-chloro-8-)
Quinolinolato) calcium, 5,7-dichloro-8-quinolinolato aluminum, tris (5,7-dibromo-)
8-hydroxyquinolinolato) aluminum, poly [zinc (II) -bis (8-hydroxy-5-quinolinyl) methane], and the like.

Further, it may be an aluminum complex having another ligand in addition to 8-quinolinol or its derivative, and examples thereof include bis (2-methyl-
8-quinolinolato) (phenolato) aluminum (III)
, Bis (2-methyl-8-quinolinolato) (ortho-
Cresolato) aluminum (III), bis (2-methyl-)
8-quinolinolato) (meta-cresolato) aluminum
(III), bis (2-methyl-8-quinolinolato) (para-cresolato) aluminum (III), bis (2-methyl-8-quinolinolato) (ortho-phenylphenolato)
Aluminum (III), bis (2-methyl-8-quinolinolato) (meta-phenylphenolato) aluminum (II
I), bis (2-methyl-8-quinolinolato) (para-
Phenylphenolato) aluminum (III), bis (2-
Methyl-8-quinolinolato) (2,3-dimethylphenolato) aluminum (III), bis (2-methyl-8-quinolinolato) (2,6-dimethylphenolato) aluminum (III), bis (2-methyl-) 8-quinolinolato)
(3,4-dimethylphenolato) aluminum (III),
Bis (2-methyl-8-quinolinolato) (3,5-dimethylphenolato) aluminum (III), bis (2-methyl-8-quinolinolato) (3,5-di-tert-butylphenolato) aluminum (III) ), Bis (2-methyl-8)
-Quinolinolato) (2,6-diphenylphenolato) aluminum (III), bis (2-methyl-8-quinolinolato) (2,4,6-triphenylphenolato) aluminum (III), bis (2-methyl-) 8-quinolinolato)
(2,3,6-Trimethylphenolato) aluminum (I
II), bis (2-methyl-8-quinolinolato) (2,
3,5,6-Tetramethylphenolato) aluminum (I
II), bis (2-methyl-8-quinolinolato) (1-naphtholato) aluminum (III), bis (2-methyl-8)
-Quinolinolato) (2-naphtholato) aluminum (II
I), bis (2,4-dimethyl-8-quinolinolato)
(Ortho-phenylphenolato) aluminum (III),
Bis (2,4-dimethyl-8-quinolinolato) (para-
Phenylphenolato) aluminum (III), bis (2,
4-Dimethyl-8-quinolinolato) (meta-phenylphenolato) aluminum (III), bis (2,4-dimethyl-8-quinolinolato) (3,5-dimethylphenolato) aluminum (III), bis (2,2 4-dimethyl-8
-Quinolinolato) (3,5-di-tert-butylphenolato) aluminum (III), bis (2-methyl-4-ethyl-8-quinolinolato) (para-cresolato) aluminum (III), bis (2-methyl) -4-methoxy-8-quinolinolato) (para-phenylphenolato) aluminum (III), bis (2-methyl-5-cyano-8-quinolinolato) (ortho-cresolato) aluminum (III),
Bis (2-methyl-6-trifluoromethyl-8-quinolinolato) (2-naphtholato) aluminum (III) and the like.

In addition, bis (2-methyl-8-quinolinolato) aluminum (III) -μ-oxo-bis (2-
Methyl-8-quinolinolato) aluminum (III), bis (2,4-dimethyl-8-quinolinolato) aluminum
(III) -μ-oxo-bis (2,4-dimethyl-8-quinolinolato) aluminum (III), bis (4-ethyl-
2-Methyl-8-quinolinolato) aluminum (III)-
μ-oxo-bis (4-ethyl-2-methyl-8-quinolinolato) aluminum (III), bis (2-methyl-4)
-Methoxyquinolinolato) aluminum (III) -μ-oxo-bis (2-methyl-4-methoxyquinolinolato)
Aluminum (III), bis (5-cyano-2-methyl-)
8-quinolinolato) aluminum (III) -μ-oxo-
Bis (5-cyano-2-methyl-8-quinolinolato) aluminum (III), bis (2-methyl-5-trifluoromethyl-8-quinolinolato) aluminum (III) -μ
It may be -oxo-bis (2-methyl-5-trifluoromethyl-8-quinolinolato) aluminum (III) or the like.

Other host materials are disclosed in Japanese Patent Laid-Open No. Hei 8
The phenylanthracene derivative described in JP-A-12600 and the tetraarylethene derivative described in JP-A-8-12969 are also preferable.

The light emitting layer may also serve as the electron injecting and transporting layer. In such a case, it is preferable to use tris (8-quinolinolato) aluminum or the like.

As the electron injecting and transporting compound, it is preferable to use a quinoline derivative, and further, a metal complex having 8-quinolinol or its derivative as a ligand, particularly tris (8-quinolinolato) aluminum (Alq3). It is also preferable to use the above-mentioned phenylanthracene derivative or tetraarylethene derivative.

As the compound for the hole injecting and transporting layer, it is preferable to use an amine derivative having strong fluorescence, for example, a triphenyldiamine derivative, a styrylamine derivative, or an amine derivative having an aromatic condensed ring.

An electron injecting and transporting layer and a hole injecting and transporting layer may be provided separately from the light emitting layer. In this case, the electron injecting / transporting compound and the hole injecting / transporting compound may be used. Further, the electron injecting and transporting layer and the hole injecting and transporting layer can be formed using an inorganic substance (oxide such as silicon, germanium, strontium, rubidium, etc.).

After forming each layer of the organic EL element, SiO
A protective film may be formed using an inorganic material such as _X , Teflon (registered trademark), an organic material such as a fluorocarbon polymer containing chlorine, or the like. The protective film may be transparent or opaque, and the thickness of the protective film is about 50 to 1200 nm. The protective film is
In addition to the reactive sputtering method described above, a general sputtering method,
It may be formed by a vapor deposition method, a PECVD method, or the like.

As a substrate for forming the organic EL structure, the marking pattern, the wiring electrode, the dummy metal layer, etc., an amorphous substrate such as glass or quartz, a crystalline substrate such as S, or the like.
Examples include i, GaAs, ZnSe, ZnS, GaP, InP, and the like, and a substrate in which a crystalline, amorphous, or metal buffer layer is formed on these crystalline substrates can also be used. Further, as the metal substrate, Mo, Al, Pt, I
r, Au, Pd or the like can be used. Further, a resin material such as plastic or a flexible material can be used. The substrate material is preferably a glass substrate or a resin material. When the substrate is on the light extraction side, it is preferable that it has the same light transmittance as that of the electrode.

Alkali glass is preferable as the glass material from the viewpoint of cost, but in addition, glass compositions such as soda lime glass, lead alkali glass, borosilicate glass, aluminosilicate glass, and silica glass are also preferable. In particular, soda glass, which is a glass material having no surface treatment, can be used at low cost.

The emission color may be controlled by using a color filter film, a color conversion film containing a fluorescent substance, or a dielectric reflection film on the substrate, or the emission color may be adjusted by adjusting the combination of the organic layers of the emission layer. May be controlled.

Further, in order to prevent deterioration of the organic layers and electrodes, it is preferable to seal the organic EL structure with a sealing plate or the like. The sealing plate adheres and seals the sealing plate using an adhesive resin layer in order to prevent the infiltration of moisture. The sealing gas is preferably an inert gas such as Ar, He or N ₂ . The water content of the sealing gas is preferably 100 ppm or less, more preferably 10 ppm or less, and particularly preferably 1 ppm or less. There is no particular lower limit to this water content,
Usually, it is about 0.1 ppm.

The material of the sealing plate is preferably a flat plate, and examples thereof include glass, ceramic, metal, resin, and the like, with glass being particularly preferable. The sealing plate may be held at a desired height by adjusting the height with a spacer. Examples of the material of the spacer include resin beads, silica beads, glass beads, glass fibers and the like, and glass beads are particularly preferable.

When a recess is formed in the sealing plate,
Spacers may or may not be used. When used, the size is preferably in the range of 2 to 40 μm.

The spacer may be mixed in the sealing adhesive in advance, or may be mixed at the time of bonding. The content of the spacer in the sealing adhesive is preferably 0.01
-30 mass%, more preferably 0.1-5 mass%.

The adhesive is not particularly limited as long as it has stable adhesive strength and good airtightness, but it is preferable to use a cation curing type ultraviolet curing epoxy resin adhesive. .

The organic EL element forming each pixel is driven by direct current, pulsed or the like. The applied voltage is usually about 2 to 30V.

[0069]

[Example] [Example 1] Aluminum was formed as a wiring electrode on a glass substrate to a film thickness of 300 nm by a sputtering method, patterned by photolithography, and TiN was similarly formed to a film thickness of 40 nm. , Patterned. At that time, patterning was performed in the same manner to prepare a sample (# 1) having a number as shown in FIG. 1 and a sample (# 2) having a symbol (arrow) as shown in FIG.
At this time, the marker was attached every 10 pixels from the uppermost pixel on the right end. In addition, as a comparative sample (# 0), a sample in which no marking pattern was formed was prepared. This is the first patterning process in the manufacturing process for this display. Further, the marker pattern can be formed in the dummy pixel formation region, and no new occupied area is required.

Next, an ITO transparent electrode (hole injection electrode) was formed into a film with a thickness of about 100 nm by a sputtering method. Obtained I
The TO thin film was patterned and etched by a photolithography method to form a hole injection electrode layer forming a pattern of 64 × 256 dots (pixels).

Further, except for the light emitting portion, an edge cover was formed (patterned) using a photoresist.

After that, an element isolation structure was formed to isolate each electron injecting electrode.

After the surface of the substrate on which the ITO transparent electrode, the TiN electrode protective layer, the electrode layer and the like are formed is washed with UV / O ₃ , an organic layer as shown in, for example, Japanese Patent Application No. 9-41663. An element isolation structure having an eaves structure with a shielding function was formed.

Then, it was fixed to a substrate holder of a vacuum vapor deposition apparatus, and the pressure inside the tank was reduced to 1 × 10 ⁻⁴ Pa or less. 4,
4 ', 4 "-tris (-N- (3-methylphenyl)-
N-phenylamino) triphenylamine (hereinafter, m-
MTDATA) was vapor-deposited at a vapor deposition rate of 0.2 nm / sec. To a thickness of 40 nm to form a hole injecting layer, and then N, N′-diphenyl-N, N′-m-tolyl-4 was prepared while keeping a reduced pressure. , 4′-diamino-1,1′-biphenyl (hereinafter,
TPD) was vapor deposited at a vapor deposition rate of 0.2 nm / sec. To a thickness of 35 nm to form a hole transport layer. Further, while maintaining the reduced pressure, tris (8-quinolinolato) aluminum (hereinafter,
Alq3) was vapor-deposited at a vapor deposition rate of 0.2 nm / sec. To a thickness of 50 nm to form an electron injection / transport / light-emitting layer.

Next, while maintaining the reduced pressure, the EL element structure substrate was transferred from the vacuum vapor deposition apparatus to the sputtering apparatus, and the AlLi electron injection electrode (Li concentration: 7.2 at%) was formed to a thickness of 50 nm at a sputtering pressure of 1.0 Pa. It was formed into a film. At that time, Ar was used as the sputtering gas, the input power was 100 W, the size of the target was 4 inches, and the distance between the substrate and the target was 90 mm.

Further, while keeping the reduced pressure, this EL element substrate was transferred to another sputtering apparatus, and a DC sputtering method using an Al target was performed at a sputtering pressure of 0.3 Pa.
l A protective electrode was formed to a thickness of 200 nm. At this time, Ar was used as the sputtering gas, the input power was 500 W, the target size was 4 inches, and the distance between the substrate and the target was 9 W.
It was set to 0 mm. The mask was removed when all film formation was completed.

Finally, a glass sealing plate was attached, and a circularly polarizing plate was attached to the opposite surface to obtain an organic EL display.

With respect to 100 organic EL display samples formed in this way, the work efficiency (time) in the inspection process, the apparatus cost, etc. were compared. As a result, in each of the samples (# 1 and 2) on which the pattern was formed and arranged, the average working time was reduced by about 50% per one abnormal place as compared with the comparative sample (# 0). Further, it has been found that when the conventional device is inspected by using the device having the highly accurate inspection stage in order to obtain the same work efficiency, the cost of the inspection device is increased about twice.

In addition, since the marker pattern is formed in the first patterning process in all the steps, the working time is reduced as required in each step, and the total working time is about 50% in total. Diminished. Further, it has been found that when the conventional device is inspected by using the device having the highly accurate inspection stage in order to obtain the same work efficiency, the cost of the inspection device is increased about twice.

[Example 2] Aluminum was formed as a wiring electrode on a glass substrate to a film thickness of 300 nm by a sputtering method and patterned by photolithography, and TiN was similarly formed to a film thickness of 40 nm. Patterned. At that time, aluminum was similarly formed as a dummy metal layer in the non-light-emitting region other than the wiring electrode formation region and patterned. At the same time, a marker pattern having a shape as shown in FIG. 4 was formed. The patterning shape of the peripheral portion at that time was patterned so as to overlap with the attachment position of the circularly polarizing plate (for example, a product of a polarizing plate Sumikaran manufactured by Sumitomo Chemical Co., Ltd. and a retardation plate Sumikalite). Also,
The gap with other electrodes and structures was set to about 15 to 30 μm.

A display was prepared and evaluated in the same manner as in Example 1 except for the above. As a result, almost the same results as in Example 1 were obtained except that the effect of uniforming the appearance on the display surface was obtained.

[Embodiment 3] Instead of forming the marking patterns (# 1, 2) in Embodiment 1, a marking pattern as shown in FIGS.
3, 4) was formed. At this time, the wiring electrode was connected in the same manner as the pixel, and wiring was performed up to the pad connection terminal portion to form a terminal pattern.

In the obtained display, since the marker pattern is formed in the same step as the pixel forming step, the same effect as when the marker pattern is formed in the first patterning process cannot be obtained.

However, in the process of disposing the display in a dark room and inspecting the light emitting state of the pixel using the jig, light was emitted in the same manner as the pixel and functioned as an extremely highly visible marker. Therefore, the average working time in this process was reduced by about 50% per abnormal site. Further, it has been found that when the conventional device is inspected by using the device having the highly accurate inspection stage in order to obtain the same work efficiency, the cost of the inspection device is increased about twice.

In the inspection, the produced organic EL display sample was continuously scanned by pulse driving in the atmosphere so that each pixel had a constant current density of 10 mA / cm ² .

[Example 4] The label of Example 1 and Example 3
And the labels of and were formed at different positions. When this sample was evaluated in the same manner as in Examples 1 and 3, it was found that the effects of Examples 1 and 3 could be obtained simultaneously.

As described above, it is understood that the work efficiency in the inspection process is improved by inserting the specific pattern. In particular, it can be seen that even in a situation such as a lighting inspection under a dark room, by causing the specific pattern to emit light, the abnormal part can be identified smoothly.

[0088]

As described above, according to the present invention, without increasing the number of steps, in a short time, and without increasing the inspection cost,
Confirm the location of the abnormal location that has been specified without changing the performance of the entire device, or even in a dark room, or
It is possible to provide a matrix type organic EL display capable of quickly moving the field of view to a specific place.

[Brief description of drawings]

FIG. 1 is a schematic plan view showing a first embodiment of a matrix type organic EL display of the present invention.

FIG. 2 is a schematic plan view showing a second embodiment of a matrix type organic EL display of the present invention.

FIG. 3 is a schematic plan view showing a state where dummy electrodes are formed in the matrix type organic EL display of the present invention.

FIG. 4 is a partial plan view showing an example in which a dummy electrode is applied as a marking pattern.

[Explanation of symbols] 1 substrate 2 Light emitting display area 3 Area where the polarizing layer and retardation layer are arranged 4 Dummy metal layer 5 wiring electrodes 6 sign patterns 7 Dummy pixel formation area 8 display openings

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05B 33/26 H05B 33/26 ZF term (reference) 3K007 AB13 AB17 AB18 BA06 BB01 BB04 BB06 CA01 CB01 DA00 DB03 EB00 FA01 FA02 5C094 AA43 BA27 CA19 EA03 GB10 5G435 AA17 BB05 CC09 KK05 KK09 KK10

Claims (6)

[Claims] 1. A matrix type organic EL display in which a specific marker pattern is formed near a device in a light emitting display area for each predetermined number of devices starting from an end or a reference position in the light emitting display region. 2. The matrix type organic EL display according to claim 1, wherein the sign pattern is formed at the same time as a structure formed in a first patterning process. 3. The matrix type organic EL display according to claim 1, wherein the sign pattern is made of the same material as the structure formed in the first patterning process. 4. The structure formed in the first patterning process is a wiring structure.
Matrix type organic EL display. 5. The matrix type organic EL device according to claim 1, wherein the marker pattern emits light in the same manner as the devices in the light emitting display area.
display. 6. The matrix type organic EL display according to claim 1, wherein the mark pattern is formed in a dummy pixel formation region around a display region.