JP2003051482A - Device and method for substrate processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide substrate processing technology capable of decreasing the consumption of an organic solvent. SOLUTION: While nitrogen gas is being supplied from a 1st supply nozzle 40 and a 2nd supply nozzle 50, after a wafer W is cleaned in a processing tank 20, pure water is discharged from the processing tank 20. Then IPA vapor (vapor of organic solvent) is jetted out of the 1st supply nozzle 40 to form an air current area AR of the IPA vapor and the wafer W is lifted so as to pass through the air current area AR. Consequently, the IPA vapor is blown to the substrate W. Thus, the IPA vapor can be supplied efficiently to the wafer W, so the consumption of the organic solvent can be reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate which has been cleaned with pure water, a glass substrate for a liquid crystal display device,
The present invention relates to a substrate processing technique for performing a drying process on a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter, simply referred to as "substrate").

[0002]

2. Description of the Related Art Conventionally, in a substrate manufacturing process,
After sequentially performing a treatment with a chemical solution such as hydrofluoric acid and a cleaning treatment with pure water, while drawing the substrate out of the pure water, vapor of an organic solvent such as isopropyl alcohol (hereinafter referred to as “IPA”) is supplied to the periphery of the substrate. 2. Description of the Related Art A substrate processing apparatus that performs a drying process is used. In particular, in recent years, when the structure of the pattern formed on the substrate is becoming more complicated and finer, the lifting and drying method in which the substrate is lifted from pure water while supplying IPA vapor is becoming mainstream.

In the conventional substrate-drying-type substrate processing apparatus, as shown in FIG. 9, a processing tank 92 for performing a cleaning process with pure water is housed in a container 90. After the cleaning process of the substrate W in the processing tank 92 is completed, the substrate W is lifted from the processing tank 92 by the elevating mechanism 93 while supplying the nitrogen gas into the container 90, and then, as shown by an arrow FI9 in FIG. The IPA vapor is discharged from 91. As a result, the inside of the container 90 is filled with the IPA vapor, and the substrate W
The IPA is condensed on the substrate, and the IPA is dried, whereby the substrate is dried.

[0004]

However, in the above-mentioned lifting and drying type substrate processing apparatus, the container 9 is used.
It is necessary to supply IPA vapor to all
It cannot be said that PA vapor is efficiently supplied to the substrate,
There has been a problem that the consumption of IPA is high.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing technique capable of reducing the consumption amount of an organic solvent.

[0006]

In order to solve the above-mentioned problems, the invention of claim 1 is a substrate processing apparatus for performing a substrate drying process after a substrate cleaning process with pure water is completed. A processing tank that stores water and performs a cleaning process by immersing the substrate in pure water, a container that stores the processing tank, and a substrate that holds the substrate in the processing tank while being stored in the processing tank A drainage means for draining pure water, an organic solvent discharge means for discharging a vapor of an organic solvent to form an airflow region of the organic solvent in the container, and the cleaning from the processing tank drained by the drain means. And a lifting means for lifting the substrate after the treatment, and when the substrate is lifted by the lifting means, the substrate passes through the air flow region of the organic solvent.

According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect of the present invention, an inert gas inflow means for inflowing an inert gas into the processing bath is provided, and the inert gas inflow means is provided. The draining means drains pure water while allowing an inert gas to flow into the treatment tank.

According to a third aspect of the invention, in the substrate processing apparatus according to the first or second aspect of the invention, the organic solvent discharging means is provided in the vicinity of the opening of the processing tank, Has a discharge part that discharges the vapor of the organic solvent in a substantially horizontal direction above.

Further, in a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the first to third aspects of the invention, the air flow region of the organic solvent is one of the paths through which the substrate is lifted by the lifting means. It is formed about a part.

The invention of claim 5 is the substrate processing apparatus according to any one of claims 1 to 4, wherein the vapor of the organic solvent is vapor of isopropyl alcohol.

According to a sixth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fifth aspects, the lifting means collectively lifts a plurality of substrates spaced apart from each other. .

Further, the invention of claim 7 is a substrate processing method using a substrate processing apparatus having a processing tank capable of storing pure water and a container for housing the processing tank. A treatment step of immersing the substrate in the stored pure water to perform a cleaning treatment, a drainage step of draining the pure water stored in the treatment tank while holding the substrate in the treatment tank, and an organic solvent Of the organic solvent discharge step of forming a gas flow region of the organic solvent in the container, and a lifting step of lifting the substrate after the cleaning process from the drained processing tank, the substrate, When the substrate is lifted, the substrate passes through the air flow region of the organic solvent.

Further, the invention of claim 8 is the substrate processing method according to the invention of claim 7, wherein the draining step has a step of draining pure water while inflowing an inert gas into the processing tank. .

Further, in a ninth aspect of the invention, in the substrate processing method according to the seventh or eighth aspect of the invention, the organic solvent discharging step includes a discharging portion provided near an opening of the processing tank. There is a discharging step of discharging the vapor of the organic solvent in a substantially horizontal direction above the processing tank.

Further, the invention of claim 10 is the substrate processing method according to any one of claims 7 to 9, wherein in the step of discharging the organic solvent, the substrate is lifted up in the air current region of the organic solvent. Forming a part of the route to be formed.

The invention of claim 11 is the substrate processing method according to any one of claims 7 to 10, wherein the vapor of the organic solvent is vapor of isopropyl alcohol.

According to a twelfth aspect of the present invention, in the substrate processing method according to any one of the seventh to eleventh aspects of the present invention, in the lifting step, a plurality of substrates spaced apart from each other are collectively lifted. .

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION <Principal Configuration of Substrate Processing Apparatus> FIG.
FIG. 3 is a front view of the substrate processing apparatus 1 according to the embodiment of the present invention. Further, FIG. 2 is a cross-sectional view seen from the position II-II in FIG. In order to clarify the directional relationship between them, FIG. 1 and each of the following figures are appropriately provided with an XYZ orthogonal coordinate system in which the XY plane is the horizontal plane and the Z-axis direction is the vertical direction.

The substrate processing apparatus 1 is an apparatus for drying a substrate W, which has been cleaned with pure water, with IPA which is an organic solvent, and mainly includes a container 10, a processing tank 20, and a lifting mechanism 30. , The first supply nozzle 40 and the second
And a supply nozzle 50.

The processing tank 20 is a tank for storing a chemical solution such as hydrofluoric acid or pure water (hereinafter collectively referred to as a “processing solution”) and sequentially performing surface treatment on the substrate. It is housed inside. A treatment liquid discharge nozzle (not shown) is arranged near the bottom of the treatment bath 20, and the treatment bath 20 is supplied from a treatment liquid supply source (not shown) via the treatment liquid discharge nozzle.
A processing liquid can be supplied inside. The processing liquid is supplied from the bottom of the processing tank 20 and overflows from the overflow surface, that is, the opening 20p of the processing tank 20. Further, in the processing tank 20, it is also possible to discharge the processing liquid stored in the processing tank 20 by opening a drain valve 47 (see FIG. 3) described later.

The container 10 has therein a processing tank 20, a lifting mechanism 30, a first supply nozzle 40, and a second supply nozzle 50.
It is a housing for housing the like. The upper part 11 of the container 10 can be opened / closed by a conceptually illustrated slide type opening / closing mechanism 12 (the opening / closing mechanism 12 is not shown in FIGS. 2 to 8 below). When the upper portion 11 of the container 10 is open, the substrate W can be loaded and unloaded through the open portion. On the other hand, when the upper part 11 of the container 10 is closed, the inside thereof can be made a closed space.

The lifting mechanism 30 is a mechanism for immersing a set of a plurality of substrates W (lots) in the processing liquid stored in the processing bath 20. The lifting mechanism 30 includes a lifter 31, a lifter arm 32, and three holding bars 3 that hold the substrate W.
3, 34, and 35 are provided. 3 holding bars 33, 3
A plurality of holding grooves for holding the substrate W in an upright posture by fitting the outer edge portion of the substrate W into each of the grooves 4 and 35 are arranged in the X direction at predetermined intervals. Each holding groove is a notch-shaped groove. 3 holding rods 33, 34, 3
5 is fixed to the lifter arm 32, and the lifter arm 3
The lifter 2 is vertically movable (Z direction) by a lifter 31.

With such a structure, the lifting mechanism 30 has three
A position (solid line position in FIG. 1) in which the plurality of substrates W held and arranged in parallel in the X direction by the holding rods 33, 34, and 35 of the book are immersed in the processing liquid stored in the processing bath 20. It is possible to move up and down along the path PT to and from the position where the processing liquid is pulled up (the position of the virtual line in FIG. 1). The lifter 31 can employ various known mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley or a belt as a mechanism for moving the lifter arm 32 up and down. Also, the lifting mechanism 30
1 in the phantom line position of FIG.
By opening the upper portion 11 of the substrate, the substrate W can be transferred between the substrate transfer robot outside the apparatus and the elevating mechanism 30.

An opening 20 is provided outside the processing tank 20.
Two first supply nozzles 40 are provided near p. The two first supply nozzles 40 are provided on both sides of the plurality of substrates W being lifted by the lifting mechanism 30. Each of the first supply nozzles 40 is a hollow tubular member extending along the X direction, and
A plurality of discharge holes 41 arranged at equal intervals in the direction are provided. Each of the plurality of ejection holes 41 is formed so that the ejection direction is parallel to the overflow surface.
Then, each of the first supply nozzles 40 discharges IPA vapor or nitrogen gas that is an inert gas from the plurality of discharge holes 41 in the horizontal direction (Y direction), and the IPA vapor is discharged above the processing tank 20. Alternatively, an atmosphere of nitrogen gas can be formed.

Further, two second supply nozzles 5 are provided inside the container 10 and outside and above the upper end of the processing tank 20.
0 is provided. The two second supply nozzles 50 are provided below the first supply nozzle 40, respectively. Each of the second supply nozzles 50 is a hollow tubular member extending along the X direction, and has a plurality of discharge holes 51 arranged at equal intervals in the X direction. Each of the plurality of ejection holes 51 is formed so that the ejection direction is directed to the opening 20p of the processing tank 20. Then, the second supply nozzle 50
Can discharge nitrogen gas from the plurality of discharge holes 51 toward the opening 20p of the processing tank 20 to form an atmosphere containing the nitrogen gas in the processing tank 20.

IPA vapor, nitrogen gas, etc. can be supplied to the first supply nozzle 40 and the second supply nozzle 50 from a supply mechanism outside the container 10. FIG. 3 is a schematic diagram showing the configuration of the piping and the like of the substrate processing apparatus 1. The first supply nozzle 40 is connected to the IPA supply source 42 and the nitrogen gas supply source 44 via a pipe. IPA valve 43
By opening the, the IPA vapor can be supplied from the IPA supply source 42 to the first supply nozzle 40. The IPA vapor supplied to the first supply nozzle 40 is discharged from each of the plurality of discharge holes 41 in a horizontal direction in a flow parallel to the main surface of the substrate W. At this time, nitrogen gas is used as the carrier gas.

Further, by opening the nitrogen gas valve 46, the nitrogen gas supply source 44 is connected to the first supply nozzle 40.
Nitrogen gas can be supplied to. First supply nozzle 4
The nitrogen gas supplied to 0 is discharged from each of the plurality of discharge holes 41 in a horizontal direction in a flow parallel to the main surface of the substrate W.

That is, if the nitrogen gas valve 46 is closed and the IPA valve 43 is opened, the IPA vapor can be supplied from the first supply nozzle 40 in parallel with the overflow surface of the processing tank 20, and conversely the IPA valve 43 is closed. Then, by opening the nitrogen gas valve 46, nitrogen gas can be supplied in parallel with the overflow surface of the processing tank 20.

The second supply nozzle 50 is a nitrogen gas supply source 4.
4 and a pipe. Nitrogen gas valve 45
To open the second gas from the nitrogen gas supply source 44 by opening
Nitrogen gas can be supplied to the supply nozzle 50. The nitrogen gas supplied to the second supply nozzle 50 is discharged from each of the plurality of discharge holes 51 toward the opening 20p of the processing tank 20 while forming a flow parallel to the main surface of the substrate W.

The bottom of the processing tank 20 and the drain line outside the apparatus are connected via a pipe, and a drain valve 47 is inserted in the pipe. By opening the drain valve 47, the processing liquid in the processing tank 20 is discharged.

The inside of the container 10 and the exhaust line outside the apparatus are connected via a pipe, and the exhaust valve 4 is connected to the pipe.
8 and an exhaust (pressure reduction) pump 49 are inserted. By opening the exhaust valve 47 and driving the exhaust pump 49, the atmosphere in the container 10 is exhausted.

The IPA valve 43, the nitrogen gas valves 45 and 46, the drainage valve 47, and the exhaust valve 4 shown in FIG.
8 and the exhaust pump 49 are controlled in operation by the control unit 60. The control unit 60 and the drainage valve 47 function as drainage means.

<Drying Process in Substrate Processing Apparatus 1> FIG.
3 is a flowchart illustrating a substrate processing operation in the substrate processing apparatus 1. Further, FIG. 5 to FIG. 8 are views for explaining the manner of processing in the substrate processing apparatus 1. Hereinafter, the processing procedure of the substrate processing apparatus 1 will be described with reference to FIGS.
Will be described with reference to.

When the substrate W is processed by the substrate processing apparatus 1, the elevating mechanism 30 first receives a plurality of substrates W from a substrate transfer robot (not shown). Then, the container 10 is sealed, and the elevating mechanism 30 lowers the plurality of substrates W collectively held at a distance from each other in the X direction to carry the substrates W into the processing bath 20.
It is immersed in pure water stored in the processing tank 20 from p (step S1). At this stage, the pure water is continuously supplied to the processing tank 20, and the pure water continues to overflow from the overflow surface at the upper end of the processing tank 20. The pure water overflowing from the processing tank 20 is recovered by a recovery unit provided outside the upper end of the processing tank 20 and discharged to a drain line outside the apparatus.

In step S2, a cleaning process is performed on the substrate. Here, while maintaining a state in which a plurality of substrates W are immersed in pure water stored in the processing tank 20, a chemical solution or pure water is sequentially supplied to the processing tank 20 to perform etching or cleaning processing in a predetermined order. (The state of FIG. 5). Even at this stage, the chemical liquid or pure water continues to overflow from the upper end of the processing tank 20, and the overflowing processing liquid is recovered by the recovery unit.

In the state of FIG. 5, nitrogen gas is horizontally discharged from the first supply nozzle 40 as shown by an arrow FN41 in FIG. 5, and an arrow FN42 in FIG.
As shown in, the nitrogen gas is discharged from the second supply nozzle 50 toward the opening 20p of the processing tank 20. As a result, the inside of the container 10 becomes a nitrogen atmosphere, and the processing of the substrate W proceeds under the nitrogen atmosphere.

When the surface treatment on the substrate W progresses, the final finish cleaning treatment is finally reached. In the present embodiment, the finish cleaning process is performed by storing pure water in the processing tank 20 and immersing the plurality of substrates W in the pure water, as in the normal cleaning process. Nitrogen gas is also supplied in the final stage of the finish cleaning process, the nitrogen gas is discharged from the first supply nozzle 40 and the second supply valve 50, and the finish cleaning process is performed in a nitrogen atmosphere. .

In step S3, the pure water stored in the processing tank 20 is drained. That is, when the cleaning process of the substrate W in the processing bath 20 (step S2) is completed, as shown in FIG. 6, the pure water stored in the processing bath 20 is held while the substrate W is held in the processing bath 20. Drain. Again, FIG.
The nitrogen gas is horizontally discharged from the first supply nozzle 40 as shown by the middle arrow FN51, and the arrow FN in FIG.
As indicated by 52, the nitrogen gas is discharged from the second supply valve 50 toward the opening 20p of the processing tank 20 to cause the nitrogen gas to flow into the processing tank 20. This makes it possible to prevent the occurrence of watermarks on the substrate W. Further, as the nitrogen gas flows into the processing bath 20, the entire surface of the substrate W is covered with nitrogen.

When the substrate W is exposed to the atmosphere in the container 10 by draining the substrate W while holding it in the processing bath 20 as described above, that is, by lowering the interface (water surface) in the processing bath 20. In comparison with the case where the substrate W is exposed by pulling the substrate W from pure water, there is no shaking (vibration) of the substrate W associated with the pulling, so that particles that may be generated near the interface are not regenerated on the substrate. Adhesion can be effectively prevented. In particular, when it is desired to increase the exposure speed of the substrate W to the atmosphere, a method of holding the substrate W and draining it is effective.

In step S4, the IPA vapor flow area A
Form R. That is, after the drainage (step S3) in the treatment tank 20 is completed, the IPA vapor is ejected from the first supply nozzle 40, which functions as an ejection portion, in a substantially horizontal direction above the treatment tank 20, and the IPA vapor airflow area AR (A virtual line portion in FIG. 7) is formed. The flow area AR of the IPA vapor is the first
In the vicinity of the supply nozzle 40, there is an IPA vapor zone having a flow velocity above a certain level in the discharge direction of the discharge hole 41. The nitrogen gas flow FN62 is continuously supplied from the second supply nozzle 50 into the processing tank 20.

In step S6, the substrate W is removed from the processing bath 20.
Withdraw. At this time, the elevating mechanism 30 that functions as a lifting unit is driven to collectively lift the plurality of substrates W spaced apart from each other from the processing bath 20. Here, as shown in FIG. 7, the container 10 is operated by the first supply nozzle 40.
A plurality of substrates W in the airflow area AR formed locally
Passes through. In this way, the IPA vapor is directly blown onto the substrate W in the IPA vapor airflow region AR formed on a part of the lifting path PT (see FIG. 1), and the plurality of substrates W are dried. In this case, not the mixed gas, but a single gas, that is, only IPA acts on the substrate W exposed to the nitrogen gas, and the entire surface of the substrate W is covered with IPA.

As the substrate W passes through the airflow region AR in this manner, the IPA vapor can be efficiently supplied to the substrate W, so that the consumption amount of the IPA vapor can be reduced. That is, since the IPA vapor is preferentially supplied to a part of the space inside the container 10, the IPA consumption can be significantly reduced as compared with the conventional method of supplying the IPA vapor to the entire space inside the container 10. .

When the substrate W passes through the IPA vapor flow region AR, nitrogen gas is horizontally discharged from the first supply nozzle 40 as shown by an arrow FN71 in FIG. The nitrogen gas flow FN72 is supplied from the second supply nozzle 50 to the processing tank 20.
Supply in. Then, the first supply nozzle 40 and the second
While supplying nitrogen gas into the container 10 from the supply nozzle 50, the exhaust pump 49 is driven to exhaust the IPA vapor to the outside of the container 10 as indicated by an arrow EX in FIG. Thereby, the drying of the substrate W is completed, and the concentration of the IPA vapor used in the drying of the substrate W and remaining in the container 10 can be reduced and removed.

After that, the substrate W is further lifted by the lifting mechanism 30, and when the substrate W reaches the imaginary line position in FIG. 1, the lifting mechanism 30 is stopped and the lifting of the substrate W is completed. At this point, the gas supply from the first supply nozzle 40 and the second supply nozzle 50 is stopped.
Then, when the substrate W is lifted up to the position of the imaginary line in FIG. 1, the substrate W is transferred to the substrate transfer robot and the series of processes is completed.

By the above-described operation of the substrate processing apparatus 1, the substrate W is pulled up so as to pass through the airflow area AR of the IPA vapor, and the IPA vapor is directly supplied to the substrate W, so that the supply amount of IPA is reduced. The drying efficiency is improved.
Moreover, since the substrate W is dried while passing through the airflow region AR of the IPA vapor, more uniform drying is possible.

<Modification> In the above embodiment, heated nitrogen gas may be supplied.

[0047]

As described above, according to the first to twelfth aspects of the present invention, when the substrate having been cleaned is lifted from the drained processing tank, the substrate passes through the air flow region of the organic solvent. Therefore, the consumption of the organic solvent can be reduced. Further, since the pure water is drained while holding the substrate in the processing tank, it is possible to suppress reattachment of particles to the substrate.

In particular, in the inventions of claims 2 and 8, since the deionized water is discharged while the inert gas is allowed to flow into the treatment tank before the airflow region of the organic solvent is formed, Substrate drying with steam can be started properly.

Further, in the inventions of claims 3 and 9, since the vapor of the organic solvent is discharged from the discharge part provided in the vicinity of the opening of the processing tank toward the opening, the vapor of the organic solvent is discharged onto the substrate. Can be efficiently supplied.

Further, in the inventions of claims 4 and 10, since the air flow region of the organic solvent is formed in a part of the path through which the substrate is lifted, the vapor of the organic solvent can be appropriately supplied to the substrate.

Further, in the inventions of claims 5 and 11, since the vapor of the organic solvent is the vapor of isopropyl alcohol, the substrate can be efficiently dried.

Further, in the sixth and twelfth aspects of the present invention, a plurality of substrates spaced apart from each other are collectively lifted, so that the substrate processing can be efficiently performed.

[Brief description of drawings]

FIG. 1 is a front view of a substrate processing apparatus 1 according to an embodiment of the present invention.

FIG. 2 is a sectional view as seen from the position II-II in FIG.

FIG. 3 is a schematic diagram showing a configuration of piping and the like of the substrate processing apparatus 1.

FIG. 4 is a flowchart illustrating a substrate processing operation in the substrate processing apparatus 1.

FIG. 5 is a diagram illustrating a processing state in the substrate processing apparatus 1.

FIG. 6 is a diagram illustrating a state of processing in the substrate processing apparatus 1.

FIG. 7 is a diagram illustrating a state of processing in the substrate processing apparatus 1.

FIG. 8 is a diagram illustrating a processing state in the substrate processing apparatus 1.

FIG. 9 is a diagram illustrating a state of substrate drying processing according to a conventional example.

[Explanation of symbols]

1 Substrate processing equipment 10 container 20 treatment tanks 30 lifting mechanism 40 First supply nozzle 50 Second supply nozzle FN nitrogen gas flow FI IPA vapor flow W board

Claims (12)

[Claims] 1. A substrate processing apparatus for performing a substrate drying process after a substrate cleaning process with pure water is completed, the process comprising storing pure water, immersing the substrate in the pure water, and performing the cleaning process. A tank, a container that houses the processing tank, a drainage unit that drains pure water stored in the processing tank while holding the substrate in the processing tank, and discharges vapor of an organic solvent, An organic solvent discharge means for forming an air current region of an organic solvent in the container, and a lifting means for lifting the substrate after the cleaning processing from the processing tank drained by the draining means, the substrate by the lifting means The substrate processing apparatus, wherein the substrate passes through an airflow region of an organic solvent when the substrate is lifted. 2. The substrate processing apparatus according to claim 1, further comprising an inert gas inflow means for inflowing an inert gas into the processing tank, wherein the inert gas inflow means inactivates the inert gas in the processing tank. The substrate processing apparatus, wherein the drainage means drains pure water while allowing gas to flow in. 3. The substrate processing apparatus according to claim 1, wherein the organic solvent discharging unit is provided in the vicinity of the opening of the processing tank, and is arranged substantially horizontally in the horizontal direction above the processing tank. A substrate processing apparatus comprising: a discharge unit that discharges solvent vapor. 4. The substrate processing apparatus according to claim 1, wherein the organic solvent airflow region is formed in a part of a path along which the substrate is lifted by the lifting means. Substrate processing equipment. 5. The substrate processing apparatus according to claim 1, wherein the vapor of the organic solvent is vapor of isopropyl alcohol. 6. The substrate processing apparatus according to claim 1, wherein the lifting means collectively lifts a plurality of substrates spaced apart from each other. . 7. A substrate processing method using a substrate processing apparatus having a treatment tank capable of storing pure water and a container for accommodating the treatment tank, wherein the pure water stored in the treatment tank is used. A treatment step of immersing the substrate for cleaning, a drainage step of draining pure water stored in the treatment tank while holding the substrate in the treatment tank, and discharging a vapor of an organic solvent, An organic solvent discharge step of forming an air current region of the organic solvent in the container, and a lifting step of lifting the substrate after the cleaning treatment is completed from the drained processing tank, and when the substrate is lifted, the substrate The method for treating a substrate is characterized in that the gas passes through an air flow region of the organic solvent. 8. The substrate processing method according to claim 7, wherein the draining step includes a step of draining pure water while allowing an inert gas to flow into the processing bath. Method. 9. The substrate processing method according to claim 7, wherein the organic solvent discharging step is substantially horizontal above the processing tank from a discharging portion provided near an opening of the processing tank. And a discharge step of discharging a vapor of an organic solvent in a direction. 10. The substrate processing method according to claim 7, wherein the organic solvent discharging step forms an airflow region of the organic solvent for a part of a path along which the substrate is lifted. A substrate processing method, comprising: 11. The substrate processing method according to claim 7, wherein the vapor of the organic solvent is vapor of isopropyl alcohol. 12. The substrate processing method according to claim 7, wherein in the lifting step, a plurality of substrates spaced apart from each other are collectively lifted. .