JP2003046117A - Method for manufacturing semiconductor light-emitting element - Google Patents

Method for manufacturing semiconductor light-emitting element

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Publication number
JP2003046117A
JP2003046117A JP2001229698A JP2001229698A JP2003046117A JP 2003046117 A JP2003046117 A JP 2003046117A JP 2001229698 A JP2001229698 A JP 2001229698A JP 2001229698 A JP2001229698 A JP 2001229698A JP 2003046117 A JP2003046117 A JP 2003046117A
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Japan
Prior art keywords
conductivity type
layer
semiconductor layer
formed
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001229698A
Other languages
Japanese (ja)
Inventor
Tomoiku Honjiyou
智郁 本城
Original Assignee
Kyocera Corp
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp, 京セラ株式会社 filed Critical Kyocera Corp
Priority to JP2001229698A priority Critical patent/JP2003046117A/en
Publication of JP2003046117A publication Critical patent/JP2003046117A/en
Application status is Pending legal-status Critical

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Abstract

PROBLEM TO BE SOLVED: To solve the problem that the convexo-concaving of the surface of a film produced by an MOCVD method is difficult since thickness reduction is requested, though the convexo-concaving of the surface of a clad layer, etc., is easy since a film of at least several ten μm is formed there in a normal semiconductor light-emitting element. SOLUTION: On a semiconductor substrate, a one conductivity type semiconductor layer and an opposite conductivity type semiconductor layer are laminated in order so that the total of the film thickness of both of the layers is <=15 μm. One electrode is formed on the opposite conductivity type semiconductor layer, the other electrode is formed on the rear surface of the semiconductor substrate, the opposite conductivity type semiconductor layer additionally has light emitting layers and clad layers laminated in order, a film containing Zn is formed on an upper face, and thermal treatment is given after this to form a face given rough face treatment, thereby improving optical outside take-out efficiency.

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a semiconductor light emitting device.
Infrared light used for infrared communication or remote control
The present invention relates to a method for manufacturing a semiconductor light emitting device suitable for a conductor light emitting device.
Things. [0002] 2. Description of the Related Art A conventional infrared semiconductor light emitting device is shown in FIG.
You. FIG. 1 is a cross-sectional view of this device, where 11 is a semiconductor substrate.
A semiconductor layer of one conductivity type on the semiconductor substrate 11.
12 and the opposite conductivity type semiconductor layer 13 are epitaxially grown.
And a P-side electrode 14 is formed on the opposite conductivity type semiconductor layer 13.
Form. An N-side electrode 1 is provided on the back surface of the semiconductor substrate 11.
5 is formed. The P-side electrode 14 and the N-side electrode 15
By applying a voltage between them, the light emitted inside will be on the P side
Take outside from the part where electrode 14 is not provided or from the side.
Be sent out. In such an infrared semiconductor light emitting device,
Is a homojunction semiconductor light emitting device and other carriers
With high injection efficiency, high output and high response speed
Glue heterojunction structure semiconductor light emitting device or double head
2. Related Art A semiconductor light emitting device having a junction structure is known. A conventional infrared semiconductor light emitting device has a
Epitaxy by LPE method (Liquid Phase Epitaxy)
And grown. According to this method, one conductivity type
Each of the semiconductor layer 12 and the opposite conductivity type semiconductor layer 13 has a size of several tens μm.
m or more. In such a semiconductor light emitting device,
There has been proposed a technique for making the light emitting surface uneven. [0007] According to this proposal, it is necessary to make the surface uneven.
However, when viewed microscopically, there are various light extraction surfaces
Angled concavities and convexities are formed, thereby providing an effective solid angle
The degree increases, and the light extraction efficiency improves. [0008] The method of making the surface uneven as described above is as follows.
It is as follows. First, one conductivity type is placed on the semiconductor substrate 11.
The semiconductor layer 12 and the opposite conductivity type semiconductor layer 13 are sequentially epitaxied.
Then, an N-side electrode 15 is formed on the back surface,
Is provided with a P-side electrode 14, and thereafter, each element is subjected to dicing or the like.
After making a groove between the chips, immersing it in the etching solution
To make the surface uneven. This etching is the most advanced
Where the etching is more than tens of μm
I have. In this regard, Japanese Patent Application Laid-Open No. Hei 10-200156 has been proposed.
According to the gazette, a technique using a nitric acid-based etchant is disclosed.
Nitric acid has been suggested to be very effective depending on the composition of the solution.
As a result, irregularities can be produced on the semiconductor surface, and usually,
For an infrared semiconductor light emitting device composed of GaAs,
Use an etchant diluted with water or other acid to remove any irregularities on the surface.
Is going on. However, this etching solution was used.
In this case, the etching rate becomes very high,
To make the surface uneven, only about 10 μm
The above film is required. In addition, lower the etching rate
Then, since the surface does not become uneven, the luminous efficiency is increased.
You can't stop. Further, according to Japanese Patent Application Laid-Open No. 4-296723,
If it is, the Al composition of AlGaAs of the cladding layer is large.
(Al composition ratio of about 0.35 or more)
In this case, the surface can be roughened with hydrofluoric acid.
Although the surface roughness can not be achieved when the Al composition is small.
No. Also, Japanese Patent Application Laid-Open No. 3-24771 discloses
Use ammonia-hydrogen peroxide based etchant
Then, the case where the surface is made uneven is illustrated. However, these known surface irregularities
Are for thick films formed by the LPE method.
Therefore, it is not suitable for a thin film. That is, a film is formed by the LPE method as in the prior art.
Is easy to make thicker and thicker
This increases the spread of light emission and the surface
The surface is roughened by etching to improve the luminous efficiency.
I've been measuring up. [0015] SUMMARY OF THE INVENTION However, semiconductors
The layer is formed by MOCVD (Metalorganic Chemical Vapor Depo
sition), when the film is thinned,
It is difficult to do this with a well-known surface unevenness method.
Was. The MOCVD method will be further described.
In recent years, higher output and higher response speed have been demanded.
As a result, epitaxial films have become thinner.
I have. Attention is paid to the technology of forming a film by MOCVD.
Have been. According to this MOCVD method, the film thickness or
Semiconductors with increasingly complex structures that facilitate composition control
A light-emitting element can be manufactured. However, in this MOCVD method, LP
The deposition rate is extremely slow and the deposition time is significantly longer than the E method
It is not suitable for forming a thick film because it becomes longer
is there. In addition, in the MOCVD method,
The raw materials provided for film formation are only a part, and most are discarded.
Therefore, thickening the membrane is a significant cost
Was high. Accordingly, the present invention has been completed in view of the foregoing.
The purpose is to form a thin film by MOCVD or other methods.
Technology to sequentially form one conductivity type semiconductor layer and opposite conductivity type semiconductor layer
In addition to laminating, the light emitting surface is formed as a roughened surface.
To increase the effective solid angle and increase the light extraction efficiency
To provide a high-performance semiconductor light emitting device manufacturing method
is there. Another object of the present invention is to increase luminous efficiency.
To provide a method for manufacturing a semiconductor light emitting device. [0022] A semiconductor light emitting device according to the present invention.
The production method of (1) sequentially goes through the following steps (1) to (4).
Thus, the light emitting surface is characterized by being subjected to a roughening treatment. (1) Gallium arsenide-based one conductivity type semiconductor on semiconductor substrate
The layers and the opposite conductivity type semiconductor layer are sequentially laminated. (3) At least two layers of the opposite conductivity type semiconductor layer and the Zn-containing layer
To diffuse Zn into the opposite conductivity type semiconductor layer. (4) Removal of Zn-containing layer by etching treatment
In particular, the surface of the opposite conductivity type semiconductor layer is roughened. Another method of manufacturing a semiconductor light emitting device according to the present invention.
Is the reverse conductivity type of the gallium arsenide-based one conductivity type semiconductor layer.
The semiconductor layer is formed by MOCVD.
I do. Production of still another semiconductor light emitting device of the present invention
The method comprises the steps of: conducting a reverse conduction with the gallium arsenide-based one conductivity type semiconductor layer;
The total thickness of both the semiconductor layer and the semiconductor layer is 15 μm or less
It is characterized by the following. According to the present invention, according to the above-described structure, the reverse conductivity type semiconductor device is used.
Form a Zn-containing layer on the conductor layer and go through the heat treatment process
In the subsequent etching process, the opposite conductivity type semiconductor
The surface of the layer can be roughened. Further, according to the present invention, a semiconductor layer having a reverse conductivity type is provided.
By forming a Zn-containing layer on top of this,
Zn atoms are diffused at a high concentration in the opposite conductivity type semiconductor layer.
As a result, Zn atoms are efficiently diffused into the semiconductor layer.
And the current flowing inside is not concentrated under the electrode.
As a result, the luminous efficiency was improved. [0026] BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described in detail. Example 1 FIG. 1 shows a semiconductor light emitting device according to the present invention.
FIG. 3 is a cross-sectional view showing a film configuration of
No surface roughening treatment is performed. FIG.
Is a sectional view showing one embodiment of the semiconductor light emitting device of the present invention.
Yes, surface-roughened by etching
You. In FIG. 1, the roughness by heating and etching
The structure before the surface treatment is described. 1 is a substrate, 2 is a semiconductor layer of one conductivity type, and 3 is an inverted semiconductor layer.
A conductive semiconductor layer, 6 is a ZnO film that is the Zn-containing layer,
7 is SiOTwoIt is a membrane. The substrate 1 is made of gallium arsenide (GaAs), silicon
It is made of a single-crystal semiconductor substrate such as silicon (Si). The one conductivity type semiconductor layer 2 includes a buffer layer 2a,
It is composed of a child injection layer 2b. The buffer layer 2a has a thickness of about 0.5 to 3 μm.
And the electron injection layer 2b has a thickness of about 0.2 to 5 μm.
It is formed to a thickness. The buffer layer 2a is formed of gallium arsenide or the like.
The electron injection layer 2b is made of aluminum gallium arsenide (G
aAlAs) or the like. The electron injection layer 2b is of one conductivity type such as silicon.
1 × 10 semiconductor impurities16-1019atoms (atoms)
/ CmThree Content. At this time, the electron injection layer 2b
Al composition is expressed by (GaAs) 1-xAlx
And x = about 0.2 to 0.5. The opposite conductivity type semiconductor layer 3 comprises a light emitting layer 3a,
Layer 3b and an ohmic contact layer 3c.
You. The light emitting layer 3a has a thickness of about 0.2 to 1 μm.
The cladding layer 3b is formed to a thickness of 1 to 5 μm.
And the ohmic contact layer 3c is about 0.01 to 1 μm.
It is formed to the thickness of the degree. The light emitting layer 3a is made of aluminum gallium arsenide,
Made of gallium arsenide, etc., reverse conductivity of zinc (Zn)
1 × 10 type semiconductor impurities16-1018atoms / cm
Three Content. The cladding layer 3b has an electron confinement effect and light
In consideration of the extraction effect of aluminum arsenide (AlA)
s) and gallium arsenide (GaAs)
At different times. The cladding layer 3b is made of a reverse conductive material such as zinc (Zn).
1 × 1016-1020atoms / c
mThree Content. The Al composition of the cladding layer 3b is (GaAs)
When expressed as 1-xAlx, x = about 0.2 to 0.5
Form. The ohmic contact layer 3c is made of gallium arsenide.
Made of an element such as zinc, and the opposite conductivity type semiconductor impurity such as zinc.
× 1019-1020atoms / cmThree Content. A ZnO film 6 is further formed thereon by 500 to 2,000 mm.
The thickness is formed. Further, SiO 2 is deposited on the ZnO film 6.Two
The film 7 is formed with a thickness of 1000 to 2000 °. (Method of Manufacturing Semiconductor Light Emitting Element) Next, the present invention
The method of manufacturing the semiconductor light emitting device of the above will be described. Sequentially,
Through each of the steps (1) to (4). Step (1) and
By going through (2), a structure as shown in FIG. 1 is obtained.
You. Step (1): gallium arsenide on a semiconductor substrate
One-conductivity-type semiconductor layer and reverse-conductivity-type semiconductor layer are sequentially laminated
I do. That is, one conductivity type semiconductor is formed on the single crystal substrate 1.
The body layer 2 and the opposite conductivity type semiconductor layer 3 are successively formed by MOCVD.
They are formed by lamination. When these semiconductor layers 2 and 3 are formed,
Raise the substrate temperature to 700-900 ° C and increase the thickness of the semiconductor
Layers 2 and 3 are formed. In this case, TMG ((C
HThree )Three Ga), TEG ((CTwo H Five )Three Ga), Al
Shin (AsHThree ), TMA ((CHThree )Three Al), TE
A ((CTwo HFive )Three Al) is used to control the conductivity type.
As a gas for controlling, silane (SiHFour ), Sele
Hydrogen hydride (HTwo Se), DMZ ((CHThree )Two Zn)
And H is used as a carrier gas.TwoUsed by
Can be Step (2): Zn is contained on the opposite conductivity type semiconductor layer.
Form a layer. That is, the ZnO film 6 and the SiOTwoMembrane 7
Each is formed by a sputtering method or the like. This
In this case, the ZnO film 6 has a thickness of 500 to 2000TwoMembrane
It is formed with a thickness of 1000 to 2000 °. The ZnO layer expands Zn in the semiconductor layer.
Instead of this ZnO layer, a Zn layer or Z
It may be an nAs layer. Also, for each of these layers
SiO in eachTwoMay be mixed. Step (3): at least a semiconductor layer of the opposite conductivity type
And the Zn-containing layer. That is, the substrate is heated at 600 to 700 degrees.
By annealing for tens of minutes, Zn is diffused into the substrate. Step (4): Zn-containing layer and semiconductor of opposite conductivity type
Surface of the opposite conductivity type semiconductor layer by etching the layer
Is roughened. That is, the ZnO film 6 and the SiOTwoWith membrane 7
On the other hand, it is removed by wet etching using hydrofluoric acid, etc.
You. With such removal, ohmic contact
The layer 3c is also roughened. The above steps are the basic steps of the manufacturing method of the present invention.
Is a typical process and going through such a process
Thus, the semiconductor light emitting device of the present invention is obtained. Actually, the following steps are continuously performed.
It is. Semiconductor layers 2 and 3 are islands so that each element is isolated.
Is patterned. In this etching, a sulfuric acid-hydrogen peroxide-based
Wet etching using etchant or CClTwo F
Two This is performed by dry etching using gas or the like. Each element
If you use dicing or the like to separate the
May be omitted. Then, Au or the like is deposited by vapor deposition or sputtering.
The P-side electrode 4 is patterned by the
Electrode 5 is made of AuGe or the like by vapor deposition or sputtering
Formed by Thus obtained by the production method of the present invention
According to the semiconductor light-emitting device, the configuration described above corresponds to the configuration shown in FIG.
Then, by performing the surface roughening treatment by etching,
As shown, the clad layer 3b is in an uneven state. Surface roughness after such etching treatment
Is Ra = about 500 °, for example. By forming such a roughened surface,
There are various angles to the light extraction surface when viewed in black
Irregularities are formed, and the effective solid angle is increased.
Light extraction efficiency is improved, and as a result, semiconductor light emission
High output of the device was realized. In the present invention, thin films such as MOCVD are used.
When a semiconductor layer is formed by film formation technology,
After the surface roughening treatment, the conductive layer and the one conductive type semiconductor layer 2 have opposite conductivity.
The total film thickness of both layers with the semiconductor layer 3 is 15 μm or less
Is set to With the above setting, the cladding layer
Sufficient confinement effect to concentrate current under the electrode
An effect of current diffusion can be provided so as not to cause the diffusion. Furthermore, by setting the upper limit of the film thickness,
Membrane time can be shortened as required, lowering manufacturing costs.
I can do it. In step (3), Zn is solid-phase diffused.
As a result, a high-concentration P-type diffusion region is formed around the diffusion source.
As a result, the resistance is reduced. Further, the solid phase diffusion of Zn
The depth is shallow and surface roughness is limited to the outermost surface
Only occurs, the cladding layer 3b is etched away.
The carrier injection efficiency is high,
High power, high response speed double heterojunction structure semiconductor
The characteristics of the light emitting element are not impaired. In addition, as described above, the conventional semiconductor light emission
The device is fabricated by epitaxial growth using the LPE method.
The thickness of each clad layer etc. is several tens μm or less.
The upper film is formed, and this makes the surface uneven
Easy. However, MOCVD produced films
Since thinning is required, it is difficult to make the surface uneven,
Thus, the ZnO layer and the SiOTwoHeat treatment after film formation
Can be added to the surface even when the film is thin.
Convex processing can be performed stably, and high-density P
A dispersed region could be formed. FIG. 8 shows a semiconductor light emitting device (embodiment) according to the present invention.
Example 1) and a conventional semiconductor light emitting device (without surface irregularities)
It is a measurement result which compared light intensity. The buffer layer 2a is made of a gallium arsenide layer of 0.5
μm, and the electron injection layer 2b has an Al composition of x =
0.3 g of aluminum gallium arsenide with a thickness of 2 μm
Done. The light emitting layer 3a has a gallium arsenide layer having a thickness of 1 μm.
And the cladding layer 3b has an Al composition of x = 0.3.
Aluminum gallium arsenide is formed to a thickness of 2 μm.
The gallium arsenide layer is 0.01
It was formed to a thickness of μm. Thereafter, a ZnO film is formed at 1000 °Two
The film is formed using a 2000 ° sputtering method, and the
Thereafter, heat treatment was applied at 650 degrees for 25 minutes. After this heat treatment, the ZnO film and the SiOTwofilm
Is removed with, for example, hydrofluoric acid, the ZnO film and
Irregularities are formed at the interface with the gallium arsenide layer. The inventor
Is caused by interdiffusion between ZnO and GaAs.
It is considered that irregularities are formed on the surface. The P-side electrode 4 has a thick gold / chrome electrode.
The N-side electrode 5 is formed of gold-germanium-
It was made of nickel and formed to a thickness of about 1 μm. By performing such processing, a film is formed.
After that, the surface roughness Ra was about 50 °.
Surface roughness Ra = about 500 °
Was. The wafer manufactured in this manner is used as a wafer.
In this state, the emission intensity was measured and evaluated. The result
As a result, as shown in FIG. 8, the emission intensity is increased by about 20%.
I was able to. Example 2 FIG. 3 shows a semiconductor light emitting device according to the present invention.
FIG. 2 is a cross-sectional view showing a film configuration of
It was before the process was applied. FIG. 4 shows a semiconductor light emitting device of the present invention.
FIG. 3 is a cross-sectional view showing one embodiment of the element, and
This has been subjected to a roughening treatment. 1 and 2
The same reference numerals are given to the same materials as those of the semiconductor light emitting device shown. In FIG. 3, 1 is a substrate, and 2 is a half of one conductivity type.
Conductor layer, 3 is a reverse conductivity type semiconductor layer, 6 is a ZnO layer, 7 is S
iOTwoThe film 8 is a diffusion mask. Formation of one conductivity type semiconductor layer and opposite conductivity type semiconductor layer
The film is the same as described in Example 1, but then the Si
A diffusion mask 8 of N or the like is formed by a P-CVD method or the like.
You. Then, use photolithography to match the electrode shape
Patterning is performed so as to leave the diffusion mask 8. A ZnO film 6 is further formed thereon by 500-2000.
SiO, SiOTwoFilm 7 is formed with a thickness of 1000 to 2000 mm
I do. The semiconductor light emitting device of the present invention has the structure shown in FIG.
By performing a roughening treatment by heat treatment on the
As shown in the figure, the cladding layer 3b is in an uneven state. According to such a roughening treatment, the etching
The surface roughness after the grinding treatment is, for example, Ra = about 500 °.
You. Thus, such a roughened surface is formed.
This means that when viewed microscopically, there are various angles on the light extraction surface
The effective solid angle is large due to the formation of irregularities with degrees
This improves the light extraction efficiency,
As a result, high output of the semiconductor light emitting device was realized. In the present invention, thin films such as MOCVD are used.
When a semiconductor layer is formed by film formation technology,
After the surface roughening treatment, the conductive layer and the one conductive type semiconductor layer 2 have opposite conductivity.
The total film thickness of both layers with the semiconductor layer 3 is 15 μm or less
Is set to With the above setting, the cladding layer
Sufficient confinement effect to concentrate current under the electrode
An effect of current diffusion can be provided so as not to cause the diffusion. Furthermore, by setting the upper limit of the film thickness,
Membrane time can be shortened as required, lowering manufacturing costs.
I can do it. (Method of Manufacturing Semiconductor Light Emitting Element)
A method for manufacturing such a semiconductor light emitting device will be described. First, a semiconductor layer of one conductivity type is formed on a single crystal substrate 1.
2 and the opposite conductivity type semiconductor layer 3 are sequentially laminated by the MOCVD method.
Formed. When these semiconductor layers 2 and 3 are formed,
Raise the substrate temperature to 700-900 ° C and increase the thickness of the semiconductor
Layers 2 and 3 are formed. In this case, TMG ((C
HThree )Three Ga), TEG ((CTwo H Five )Three Ga), Al
Shin (AsHThree ), TMA ((CHThree )Three Al), TE
A ((CTwo HFive )Three Al) is used to control the conductivity type.
As a gas for controlling, silane (SiHFour ), Sele
Hydrogen hydride (HTwo Se), DMZ ((CHThree )Two Zn)
And H is used as a carrier gas.TwoUsed by
Can be After that, the diffusion mask 8 is made
Film formation using P-CVD method etc. with a thickness of 00-3000mm
I do. Then, use photolithography to match the electrode shape
Patterning to leave a diffusion mask. Next, the ZnO layer 6, SiOTwoMembrane 7
A film is formed by a sputtering method or the like. At this time, Z
The nO film 6 has a thickness of 500 to 2000 °, SiOTwoThe membrane is 1000
It is formed with a thickness of ~ 2000mm. Thereafter, the substrate is heated at a temperature of 600 to 700 degrees.
With sufficient annealing, Zn diffuses into the substrate
Next, the surface of the substrate is ground. Then, a ZnO film, SiOTwoHydrofluoric acid for membrane
Remove with. Next, semiconductor devices are separated so that each element is separated.
The layers 2 and 3 are patterned in an island shape. In this etching, a sulfuric acid hydrogen peroxide-based
Wet etching using etchant or CClTwo F
Two This is performed by dry etching using gas or the like. Each element
If you use dicing or the like to separate the
May be omitted. Then, Au or the like is deposited by vapor deposition or sputtering.
Patterning and patterning the electrode, and the back surface is AuG
e and the like are similarly formed by a vapor deposition method or a sputtering method. As described above, the solid phase diffusion of Zn is used.
To form a high-concentration P-type diffusion region around the diffusion source
Therefore, the resistance can be reduced. In addition, Zn solid
By using phase diffusion, shallow diffusion depth and rough surface
Occurs only on the outermost surface.
Key layer 3b is not affected by the etching.
Carrier injection efficiency, high output, and high response speed.
Impairing the characteristics of bull heterojunction semiconductor light emitting devices
Absent. Also, by making the surface uneven,
When viewed in b, the concave surface with various angles on the light extraction surface
The effective solid angle increases due to the formation of the convex,
Extraction efficiency is improved. This allows semiconductors
Higher output of the light emitting element can be realized. As described above, the conventional semiconductor light emitting device
Are manufactured by epitaxial growth using the LPE method.
By doing so, the cladding layer etc. each have a film of several tens of μm or more.
It is easy to make the surface uneven by this.
You. However, the film produced by the MOCVD method
Since thinning is required, it is difficult to make the surface uneven.
Thus, the ZnO layer and the SiOTwoHeat treatment after film formation
Can be added to the surface even when the film is thin.
Convex processing can be performed stably, and high-density P
A dispersed region could be formed. Also, by adopting such a structure,
Therefore, the current mainly flows through the Zn diffusion layer.
Current can be prevented from being concentrated on FIG. 8 shows a semiconductor light emitting device (embodiment) according to the present invention.
Example 2) and the emission intensity of the conventional semiconductor light emitting device were compared.
It is a measurement result. The buffer layer 2a has a gallium arsenide layer of 0.5
μm, and the electron injection layer 2b has an Al composition of x =
0.3 g of aluminum gallium arsenide with a thickness of 2 μm
Done. The light emitting layer 3a has a gallium arsenide layer having a thickness of 1 μm.
And the cladding layer 3b has an Al composition of x = 0.3.
Aluminum gallium arsenide is formed to a thickness of 2 μm.
The gallium arsenide layer is 0.01
It was formed to a thickness of μm. Thereafter, the diffusion preventing SiN film is deposited at 2000
1000Å ZnO film, SiOTwo2000 membrane spatter
The film is formed by using a tarring method, and then, at 650 degrees for 25 minutes.
Heat treatment was applied. The P-side electrode 4 is a gold / chrome electrode having a thickness of 1 μm.
And the N-side electrode 5 is made of gold-germanium-nickel.
And was formed to a thickness of about 1 μm. By performing such processing, a film is formed.
After that, the surface roughness Ra was about 50 °.
Surface roughness Ra = about 500 °
Was. The wafer manufactured in this way is
In this state, the emission intensity was measured and evaluated. The result
As a result, the emission intensity can be increased by about 20% as shown in FIG.
I was able to. Example 3 FIG. 5 shows a semiconductor light emitting device according to the present invention.
FIG. 2 is a cross-sectional view showing a film configuration of
It was before the process was applied. FIG. 6 shows the semiconductor light emission of the present invention.
FIG. 3 is a cross-sectional view showing one embodiment of the element, and
This has been subjected to a roughening treatment. Note that FIGS.
The same reference numerals are given to the same materials as those of the semiconductor light emitting device shown. In FIG. 5, 1 is a substrate, and 2 is a half of one conductivity type.
Conductor layer, 3 is a reverse conductivity type semiconductor layer, 6 is a ZnO layer, 7 is S
iOTwoThe film 8 is a diffusion mask. The formation of the one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer
The membrane is identical to that described in Part 1. Thereafter, a diffusion mask 8 of SiN or the like is
The film is formed using a CVD method or the like. Then use photolithography
Pattern so that a diffusion mask is left according to the electrode shape.
Perform the cleaning. A ZnO film is formed thereon at 500 to 2000 Å,
SiOTwoA film is formed with a thickness of 1000 to 2000 °. The semiconductor light emitting device of the present invention has the structure shown in FIG.
By performing a surface roughening treatment by heat treatment on the
As shown in the figure, the cladding layer 3b is in an uneven state. [0115] Such a roughening treatment is carried out by a production method described later.
As described in detail below, the surface roughness after the etching
In this case, Ra = about 500 °. Thus, such a roughened surface is formed.
This means that when viewed microscopically, there are various angles on the light extraction surface
The effective solid angle is large due to the formation of irregularities with degrees
This improves the light extraction efficiency,
As a result, high output of the semiconductor light emitting device was realized. In the present invention, thin films such as MOCVD are used.
When a semiconductor layer is formed by film formation technology,
After the surface roughening treatment, the conductive layer and the one conductive type semiconductor layer 2 have opposite conductivity.
The total film thickness of both layers with the semiconductor layer 3 is 15 μm or less
Is set to With the above setting, the cladding layer
Sufficient confinement effect to concentrate current under the electrode
An effect of current diffusion can be provided so as not to cause the diffusion. Furthermore, by setting the upper limit of the film thickness, the
Membrane time can be shortened as required, lowering manufacturing costs.
I can do it. (Method for Manufacturing Semiconductor Light-Emitting Element)
A method for manufacturing a semiconductor light emitting device will be described. First, simple
One conductivity type semiconductor layer 2 and reverse conductivity type semiconductor on crystal substrate 1
The layer 3 is formed by sequentially stacking layers by MOCVD or the like. When these semiconductor layers 2 and 3 are formed,
Raise the substrate temperature to 700-900 ° C and increase the thickness of the semiconductor
Layers 2 and 3 are formed. In this case, TMG ((C
HThree )Three Ga), TEG ((CTwo H Five )Three Ga), Al
Shin (AsHThree ), TMA ((CHThree )Three Al), TE
A ((CTwo HFive )Three Al) is used to control the conductivity type.
As a gas for controlling, silane (SiHFour ), Sele
Hydrogen hydride (HTwo Se), DMZ ((CHThree )Two Zn)
And H is used as a carrier gas.TwoUsed by
Can be After that, a diffusion mask of 1000
Deposits a film with a thickness of up to 3000 mm using P-CVD or the like
You. Then, use photolithography to match the electrode shape
Patterning is performed to leave a diffusion mask. Next, a ZnO layer or SiOTwoSpam each membrane
The film is formed by using a sputtering method or the like. At this time, ZnO
The film is 500 ~ 2000mm, SiOTwoThe membrane is 1000-20
It is formed with a thickness of 00 °. Here ZnO diffuses Zn
And Zn or ZnAs. Ma
In addition, each has SiOTwoMay be mixed.
SiOTwoWhen a mixed film ofTwoIf the ratio is large
Since the surface is less likely to be uneven, the Zn ratio increases.
So that Thereafter, the substrate is heated at a temperature of 600 to 700 degrees.
With sufficient annealing, Zn diffuses into the substrate
Next, the surface of the substrate is ground. Thereafter, the electrodes are brought into contact using photolithography.
Etch only the contacting part and remove other Zn
O film, SiOTwoA passivation film without removing the film
Use. Next, semiconductor devices are separated so that each element is separated.
The layers 2 and 3 are patterned in an island shape. In this etching, a sulfuric acid hydrogen peroxide-based
Wet etching using etchant or CClTwo F
Two This is performed by dry etching using gas or the like. Each element
If you use dicing or the like to separate the
May be omitted. Then, Au or the like is deposited by vapor deposition or sputtering.
Patterning and patterning the electrode, and the back surface is AuG
e and the like are similarly formed by a vapor deposition method or a sputtering method. As described above, the solid phase diffusion of Zn is used.
To form a high-concentration P-type diffusion region around the diffusion source
Thus, the resistance can be reduced. In addition, Zn solid
By using phase diffusion, shallow diffusion depth and rough surface
Occurs only on the outermost surface.
Key layer 3b is not affected by the etching.
Carrier injection efficiency, high output, and high response speed.
Impairing the characteristics of bull heterojunction semiconductor light emitting devices
Absent. By making the surface uneven, the
When viewed in b, the concave surface with various angles on the light extraction surface
The effective solid angle increases due to the formation of the convex,
Extraction efficiency is improved. This allows semiconductors
Higher output of the light emitting element can be realized. As described above, the conventional semiconductor light emitting device
Are manufactured by epitaxial growth using the LPE method.
By doing so, the cladding layer etc. each have a film of several tens of μm or more.
It is easy to make the surface uneven by this.
You. However, the film produced by the MOCVD method
Since thinning is required, it is difficult to make the surface uneven.
Thus, the ZnO layer and the SiOTwoHeat treatment after film formation
Can be added to the surface even when the film is thin.
Convex processing can be performed stably, and high-density P
A dispersed region could be formed. In addition, by adopting such a structure,
Therefore, the current mainly flows through the Zn diffusion layer.
Current can be prevented from being concentrated on FIG. 8 shows a semiconductor light emitting device (embodiment) according to the present invention.
Example 3) and the emission intensity of the conventional semiconductor light emitting device were compared.
It is a measurement result. The buffer layer 2a has a gallium arsenide layer of 0.5
μm, and the electron injection layer 2b has an Al composition of x =
0.3 g of aluminum gallium arsenide with a thickness of 2 μm
Done. The light emitting layer 3a has a gallium arsenide layer having a thickness of 1 μm.
And the cladding layer 3b has an Al composition of x = 0.3.
Aluminum gallium arsenide is formed to a thickness of 2 μm.
The gallium arsenide layer is 0.01
It was formed to a thickness of μm. Thereafter, the diffusion preventing SiN film is deposited at 2000
1000Å ZnO film, SiOTwo2000 membrane spatter
The film is formed by using a tarring method, and then, at 650 degrees for 25 minutes.
Heat treatment was applied. The P-side electrode 4 is a gold / chrome electrode having a thickness of 1 μm.
And the N-side electrode 5 is made of gold-germanium-nickel.
And was formed to a thickness of about 1 μm. By performing such processing, a film is formed.
After that, the surface roughness Ra was about 50 °.
Surface roughness Ra = about 500 °
Was. The wafer manufactured in this manner is
In this state, the emission intensity was measured and evaluated. The result
As a result, as shown in FIG. 8, the emission intensity is increased by about 30%.
I was able to do it. [0142] As described above, the semiconductor light emitting device of the present invention
According to the above, the total thickness of both layers is 15 μm or less on the semiconductor substrate.
The semiconductor layer of one conductivity type and the semiconductor layer of opposite conductivity type
Are sequentially stacked, and the opposite conductivity type semiconductor layer is
A layer containing Zn on the upper surface.
Forming and then heat treatment for surface roughening
The effective solid angle is increased and the light
Semiconductor light-emitting device with high efficiency
Could be provided. Further, according to the present invention, at the time of Zn solid phase diffusion,
In the case of using a diffusion source with a high Zn content, the surface becomes rough.
Surface roughening using the phenomenon of
To increase the effective solid angle and increase the light extraction efficiency
As a result, a high performance semiconductor light emitting device can be provided.
Was.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a film configuration of a semiconductor light emitting device before performing a surface roughening treatment by a heat treatment according to the present invention. FIG. 2 is a cross-sectional view illustrating a film configuration of a semiconductor light-emitting element that has been subjected to a surface roughening treatment by heat treatment according to the present invention. FIG. 3 is a cross-sectional view showing a film configuration of another semiconductor light emitting device before performing a surface roughening treatment by a heat treatment according to the present invention. FIG. 4 is a cross-sectional view showing a film configuration of another semiconductor light emitting device that has been subjected to a surface roughening treatment by a heat treatment according to the present invention. FIG. 5 is a cross-sectional view showing a film configuration of still another semiconductor light emitting device before performing a surface roughening treatment by a heat treatment according to the present invention. FIG. 6 is a cross-sectional view showing a film configuration of still another semiconductor light emitting device subjected to a surface roughening treatment by a heat treatment according to the present invention. FIG. 7 is a sectional view showing a conventional semiconductor light emitting device. FIG. 8 is an evaluation diagram showing light emission intensity of a semiconductor light emitting device. [Description of Signs] 1, 11 ... Semiconductor substrates 2, 12 ... One conductivity type semiconductor layers 3, 13 ... Reverse conductivity type semiconductor layers 4, 14 ... P side electrodes 5, 15 ... N-side electrode 6 Zn diffusion source (ZnO) 7 Cap film (SiO 2 ) 8 Diffusion prevention film 2 a Buffer layer 2 b Electron injection layer 3 a Light emitting layer 3 b ... clad layer 3c ... ohmic contact layer

Claims (1)

1. A method for manufacturing a semiconductor light emitting device, wherein a light emitting surface is subjected to a roughening treatment by sequentially performing the following steps (1) to (4). (1) A gallium arsenide-based one conductivity type semiconductor layer and a reverse conductivity type semiconductor layer are sequentially stacked on a semiconductor substrate. (2) A Zn-containing layer is formed on the opposite conductivity type semiconductor layer. (3) Heat is applied to at least both the opposite conductivity type semiconductor layer and the Zn-containing layer to diffuse Zn into the opposite conductivity type semiconductor layer. (4) The surface of the opposite conductivity type semiconductor layer is roughened while the Zn-containing layer is removed by etching. 2. The method according to claim 1, wherein the gallium arsenide-based one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer are formed by MOCVD. 3. The method according to claim 2, wherein the total thickness of both the gallium arsenide-based one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer is 15 μm or less.
JP2001229698A 2001-07-30 2001-07-30 Method for manufacturing semiconductor light-emitting element Pending JP2003046117A (en)

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