JP2003045676A - Organic electroluminescent element - Google Patents
Organic electroluminescent elementInfo
- Publication number
- JP2003045676A JP2003045676A JP2001225847A JP2001225847A JP2003045676A JP 2003045676 A JP2003045676 A JP 2003045676A JP 2001225847 A JP2001225847 A JP 2001225847A JP 2001225847 A JP2001225847 A JP 2001225847A JP 2003045676 A JP2003045676 A JP 2003045676A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- organic
- layer
- organic electroluminescent
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 238000002347 injection Methods 0.000 claims description 29
- 239000007924 injection Substances 0.000 claims description 29
- 150000002894 organic compounds Chemical class 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- -1 Lewis acid compound Chemical class 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 6
- 150000002910 rare earth metals Chemical class 0.000 claims description 6
- 239000002841 Lewis acid Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000000295 emission spectrum Methods 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 3
- 229910001413 alkali metal ion Inorganic materials 0.000 claims 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- KWCQJEWFGWPEPS-UHFFFAOYSA-N 10,10,16,16-tetramethyl-5-(1,3-thiazol-2-yl)-3-oxa-13-azatetracyclo[7.7.1.02,7.013,17]heptadeca-1,5,7,9(17)-tetraen-4-one Chemical compound CC1(C)CCN2CCC(C)(C)C(C=3OC4=O)=C2C1=CC=3C=C4C1=NC=CS1 KWCQJEWFGWPEPS-UHFFFAOYSA-N 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000004776 molecular orbital Methods 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 150000004032 porphyrins Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910018572 CuAlO2 Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- CQXADFVORZEARL-UHFFFAOYSA-N Rilmenidine Chemical compound C1CC1C(C1CC1)NC1=NCCO1 CQXADFVORZEARL-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- JCYWCSGERIELPG-UHFFFAOYSA-N imes Chemical compound CC1=CC(C)=CC(C)=C1N1C=CN(C=2C(=CC(C)=CC=2C)C)[C]1 JCYWCSGERIELPG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- HEJPGFRXUXOTGM-UHFFFAOYSA-K iron(3+);triiodide Chemical compound [Fe+3].[I-].[I-].[I-] HEJPGFRXUXOTGM-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(IV) oxide Inorganic materials O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 description 1
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 description 1
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/19—Tandem OLEDs
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、平面光源や表示素
子に利用される有機エレクトロルミネッセント素子（以
下、有機ＥＬ素子と略記することがある。）に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device (hereinafter sometimes abbreviated as an organic EL device) used for a flat light source or a display device.
【０００２】[0002]
【従来の技術】対向する陽極電極と陰極電極との間に、
有機化合物からなる発光層を有する有機ＥＬ素子は、近
年、低電圧駆動の大面積表示素子を実現するものとして
注目されている。Tangらは、素子の高効率化のため、キ
ャリア輸送性の異なる有機化合物を積層し、ホールと電
子がそれぞれ陽極、陰極よりバランスよく注入される構
造とし、しかも有機層の層厚を２０００Å以下とするこ
とで、１０Ｖ以下の印加電圧で１０００cd／ｍ2 と外部
量子効率１％の実用化に十分な高輝度、高効率を得るこ
とに成功した（Appl． Phys．Lett．，51, 913 (1987).
）。しかしながら、従来の有機ＥＬ素子は、素子寿命
の観点では、表示ディスプレイ用途で必要とされる約１
００cd／ｍ2 程度の輝度でようやく１万時間を超える半
減寿命が達成されるに至ったにすぎず、照明用途等で必
要とされる約１０００cd／ｍ2 乃至約１００００cd／ｍ
2 程度の輝度で実用上必要な素子寿命を得ることは、現
段階では依然として難しいとされ、実際にそのような高
輝度、長寿命の有機ＥＬ素子は未だ実現していない。2. Description of the Related Art Between an anode electrode and a cathode electrode facing each other,
In recent years, an organic EL device having a light emitting layer made of an organic compound has been attracting attention as a device for realizing a large-area display device driven by a low voltage. In order to improve the efficiency of the device, Tang et al. Have a structure in which organic compounds having different carrier transport properties are stacked so that holes and electrons are injected from the anode and cathode in a well-balanced manner, and the layer thickness of the organic layer is 2000 Å or less. By doing so, we succeeded in obtaining high brightness and high efficiency, which is 1000 cd / m 2 and an external quantum efficiency of 1%, which is sufficient for practical use at an applied voltage of 10 V or less (Appl. Phys. Lett., 51, 913 (1987). ).
). However, from the viewpoint of device life, the conventional organic EL device has about 1% required for display display applications.
00cd / m 2 about half life more than last 10,000 hours in luminance only came to be achieved, about 1000 cd / m 2 to about 10000 cd / m required in lighting applications such as
It is said that it is still difficult to obtain a practically required device life at a brightness of about 2 at this stage, and in fact, such an organic EL device having high brightness and long life has not yet been realized.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、前記の事情
に鑑みてなされたものであり、その目的は従来の有機Ｅ
Ｌ素子では達成困難であった高輝度発光での長寿命を実
現した素子構造を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and its object is to obtain a conventional organic E
It is intended to provide an element structure that realizes a long life with high-luminance light emission, which is difficult to achieve with an L element.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、前記課題
を解決するため鋭意研究の結果、対向する陽極電極と陰
極電極の間に、複数の発光ユニットを、それぞれ等電位
面を形成する層で仕切って積層した構成とすることによ
って、この素子においては両電極間に所定電圧が印加さ
れたとき、各発光ユニットが直列的に接続されて、同時
に発光することになり、既知の有機ＥＬ素子では実現不
可能であった高い電流効率（又は量子効率）を実現でき
ることを見い出し、本発明を完成した。すなわち、本発
明の有機ＥＬ素子は、対向する陽極電極と陰極電極の間
に複数個の発光ユニットを有し、各発光ユニットがそれ
ぞれ１層の等電位面を形成する層によって仕切られてい
ることを特徴とする。Means for Solving the Problems As a result of intensive research for solving the above problems, the present inventors have formed a plurality of light emitting units between opposing anode electrodes and cathode electrodes to form equipotential surfaces. By adopting a constitution in which the layers are divided into layers and stacked, when a predetermined voltage is applied between both electrodes in this element, the light emitting units are connected in series and emit light at the same time. It was found that high current efficiency (or quantum efficiency) which could not be realized by the device can be realized, and the present invention was completed. That is, the organic EL element of the present invention has a plurality of light emitting units between the opposing anode electrode and cathode electrode, and each light emitting unit is partitioned by a layer forming one equipotential surface. Is characterized by.
【０００５】本明細書において、発光ユニットとは、有
機化合物からなる発光層を含む積層構造を有し、従来の
有機ＥＬ素子の構成要素のうち陽極電極と陰極電極を除
いた積層体部分を意味し、陽極と陰極との間に所定電圧
を印加したとき発光しうるものである。また、等電位面
を形成する層（以下、単に、等電位面と称することもあ
る）とは、電圧印加時に層内で厚さ方向にも、面方向に
も電位差が実質的にない層を意味する。In the present specification, the light emitting unit has a laminated structure including a light emitting layer made of an organic compound, and means a laminated body portion excluding the anode electrode and the cathode electrode among the constituent elements of the conventional organic EL element. However, it can emit light when a predetermined voltage is applied between the anode and the cathode. Further, a layer forming an equipotential surface (hereinafter, also simply referred to as an equipotential surface) means a layer having substantially no potential difference in the thickness direction and the surface direction within the layer when a voltage is applied. means.
【０００６】[0006]
【発明の実施の形態】次に、図面を参照して本発明を詳
細に説明する。本発明の有機ＥＬ素子は、前記のよう
に、既知の有機ＥＬ素子の基本構造である陽極電極／発
光ユニット（有機層、２層以上の積層構造が一般的）／
陰極電極のうち、両電極に挟まれた発光ユニットが２個
以上存在し、各発光ユニットが等電位面として機能する
層によって仕切られていることを特徴としている。従来
の有機ＥＬ素子は、図１に示すように、単一の発光ユニ
ットが電極に挟まれた構造となっており、陰極側から電
子（ｅ−）、陽極側からホール（ｈ＋）を注入して発光
ユニット内で再結合し、励起状態を生成し発光する。こ
れに対して、図２に示す本発明による有機ＥＬ素子は、
等電位面によって仕切られた複数の発光ユニット内で、
電子−ホール再結合が生じ、したがって複数の発光が電
極間で発生する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the drawings. As described above, the organic EL element of the present invention has a basic structure of a known organic EL element, that is, an anode electrode / light emitting unit (organic layer, generally a laminated structure of two or more layers) /
Among the cathode electrodes, there are two or more light emitting units sandwiched between the two electrodes, and each light emitting unit is characterized by being partitioned by a layer functioning as an equipotential surface. As shown in FIG. 1, a conventional organic EL element has a structure in which a single light emitting unit is sandwiched between electrodes, and electrons (e−) are injected from the cathode side and holes (h +) are injected from the anode side. Recombine in the light emitting unit to generate an excited state and emit light. On the other hand, the organic EL device according to the present invention shown in FIG.
In a plurality of light-emitting units partitioned by equipotential surfaces,
Electron-hole recombination occurs and thus multiple emissions are generated between the electrodes.
【０００７】本発明の有機ＥＬ素子において、等電位面
を形成する材料としては、一般に、可視光の透過率が５
０％以上の透明導電材料を使用するのが好ましい。可視
光の透過率が５０％未満であると、生成した光が等電位
面を通過する際に吸収され、複数個の発光ユニットを積
層しても高い電流効率が得られなくなる。透明導電材料
としては、例えば、ＩＴＯ（インジウム・すず酸化
物）、ＩＺＯ（インジウム・亜鉛酸化物）、ＳｎＯ2 、
ＺｎＯ2 、ＴｉＮ、ＺｒＮ、ＨｆＮ、ＴｉＯx 、ＶＯx
、ＣｕＩ、ＩｎＮ、 ＧａＮ、ＣｕＡｌＯ2 、ＣｕＧａ
Ｏ2 、ＳｒＣｕ2 Ｏ2 、ＬａＢ6 、ＲｕＯ2 などの導電
性無機化合物が挙げられる。また、透明性を確保出来る
程度の極薄の金属薄膜を等電位面として使用することが
できる。さらに、誘電体と金属膜を積層してなる構造の
ものを使用することもできる。それらの例としては、Ａ
ｕ／Ｂｉ2 Ｏ3 等の２層膜や、ＳｎＯ2 ／Ａｇ／ＳｎＯ
2 、ＺｎＯ／Ａｇ／ＺｎＯ、Ｂｉ2Ｏ3 ／Ａｕ／Ｂｉ2Ｏ
3 、ＴｉＯ2 ／ＴｉＮ／ＴｉＯ2 、ＴｉＯ2 ／ＺｒＮ／
ＴｉＯ2 等の多層膜が知られている。金属薄膜又は２層
以上の多層膜中の金属膜は、膜厚を１０ｎｍ以下とする
のが好ましく、０．５〜１０ｎｍとするのが好ましい。
この膜厚が１０ｎｍを超えると、光の透過率が５０％以
下になり、発光効率が下がってしまう。In the organic EL device of the present invention, an equipotential surface
In general, the visible light transmittance is 5
It is preferable to use 0% or more of a transparent conductive material. Visible
When the light transmittance is less than 50%, the generated light has an equipotential.
It is absorbed when passing through the surface and stacks multiple light emitting units.
Even if the layers are formed, high current efficiency cannot be obtained. Transparent conductive material
For example, ITO (indium tin oxide)
), IZO (indium / zinc oxide), SnO2,
ZnO2, TiN, ZrN, HfN, TiOx, VOx
, CuI, InN, GaN, CuAlO2, CuGa
O2, SrCu2O2 , LaB6, RuO2Conductivity such as
Inorganic compounds. Also, transparency can be secured
It is possible to use an extremely thin metal thin film as an equipotential surface.
it can. In addition, the structure of laminating dielectric and metal film
One can also be used. Examples of these are A
u / Bi2O3 2-layer film such as SnO2/ Ag / SnO
2, ZnO / Ag / ZnO, Bi2O3/ Au / Bi2O
3, TiO2/ TiN / TiO2, TiO2/ ZrN /
TiO2And other multilayer films are known. Metal thin film or 2 layers
The metal film in the above multilayer film has a film thickness of 10 nm or less.
Is preferable, and 0.5-10 nm is preferable.
When this film thickness exceeds 10 nm, the light transmittance is 50% or less.
As a result, the luminous efficiency is lowered.
【０００８】また、等電位面を形成する材料としては、
導電性有機物を使用することもできる。それらの例とし
ては、Ｃ60等のフラーレン類、オリゴチオフェン等の導
電性有機物、金属フタロシアニン類、無金属フタロシア
ニン類、金属ポルフィリン類、無金属ポルフィリン類等
の導電性有機化合物などが挙げられる。Further, as a material for forming the equipotential surface,
Conductive organic substances can also be used. Examples thereof include conductive organic compounds such as fullerenes such as C 60 , conductive organic substances such as oligothiophene, metal phthalocyanines, metal-free phthalocyanines, metal porphyrins and metal-free porphyrins.
【０００９】本発明において、発光ユニットとは、前述
のように、従来の有機ＥＬ素子を構成する要素のうち、
陽極と陰極とを除いた構成要素をさす。従来の有機ＥＬ
素子の構成としては、例えば、（陽極）／発光層／（陰
極）、（陽極）／ホール輸送層／発光層／（陰極）、
（陽極）／ホール輸送層／発光層／電子輸送層／（陰
極）、（陽極）／ホール注入層／ホール輸送層／発光層
／電子輸送層／電子注入層／（陰極）などが挙げられ
る。本発明による有機ＥＬ素子においては、各発光ユニ
ットが等電位面によって仕切られて、複数個（２個以
上）存在するものであれば、該発光ユニットは、いかな
る積層構造を有していてもよく、発光層、ホール輸送
層、ホール注入層、電子輸送層、電子注入層などに用い
る物質についても、特に制限はなく、従来これらの層の
形成に用いられた任意の物質であってよい。発光層に用
いられる発光材料についても、特に制限はなく、公知の
任意のものが使用され、例えば、各種の蛍光材料、燐光
材料などが挙げられる。In the present invention, the light emitting unit is, as described above, one of the elements constituting the conventional organic EL element.
The components except the anode and the cathode are referred to. Conventional organic EL
Examples of the structure of the device include (anode) / light emitting layer / (cathode), (anode) / hole transport layer / light emitting layer / (cathode),
(Anode) / hole transport layer / light emitting layer / electron transport layer / (cathode), (anode) / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / (cathode) and the like. In the organic EL device according to the present invention, the light emitting units may have any laminated structure as long as each light emitting unit is partitioned by an equipotential surface and a plurality (two or more) are present. The materials used for the light emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, the electron injection layer and the like are not particularly limited and may be any materials conventionally used for forming these layers. The light emitting material used in the light emitting layer is not particularly limited, and any known material may be used, and examples thereof include various fluorescent materials and phosphorescent materials.
【００１０】陰電極材料としては、一般的には仕事関数
の小さい金属、またそれらを含む合金、金属酸化物等が
用いられることが多い。具体的にはＬｉ等のアルカリ金
属、Ｍｇ、Ｃａ等のアルカリ土類金属、Ｅｕ等の希土類
金属等からなる金属単体、もしくは、これらの金属とＡ
ｌ、Ａｇ、Ｉｎ等との合金などが挙げられる。また、本
発明者らが提案した、陰電極と有機層との界面に金属ド
ーピング有機層を用いる構成（特開平１０−２７０１７
１号公報参照）では、陰電極は導電性材料であれば、そ
の仕事関数等の性質は別段、制限とはならない。また、
同様に本発明者らが特開平１１−２３３２６２号公報及
び特開２０００−１８２７７４号公報に開示した技術を
使用して、例えば、Ａｌ、Ｚｒ、Ｔｉ、Ｙ、Ｓｃ、Ｓｉ
などの金属、もしくはこれらの金属を含有する合金を陰
電極材料として使用することもできる。これらのうち、
特に、配線電極として一般に広く使用されているアルミ
ニウムが好ましい。また、陽極電極材料としては、例え
ば、ＩＴＯ（インジウム・すず酸化物）、ＩＺＯ（イン
ジウム・亜鉛酸化物）などの透明材料を使用する。As the negative electrode material, generally, a metal having a small work function, an alloy containing them, a metal oxide, etc. are often used. Specifically, a metal simple substance composed of an alkali metal such as Li, an alkaline earth metal such as Mg or Ca, a rare earth metal such as Eu, or these metals and A
Examples thereof include alloys with 1, 1, Ag, In and the like. Further, a structure proposed by the present inventors, in which a metal-doped organic layer is used at the interface between the negative electrode and the organic layer (Japanese Patent Laid-Open No. 10-27017).
According to Japanese Patent Laid-Open No. 1), the negative electrode is not particularly limited in its properties such as work function as long as it is a conductive material. Also,
Similarly, using the techniques disclosed by the present inventors in Japanese Patent Laid-Open Nos. 11-233262 and 2000-182774, for example, Al, Zr, Ti, Y, Sc, Si.
Metals such as, or alloys containing these metals can also be used as the negative electrode material. Of these,
In particular, aluminum, which is widely used as a wiring electrode, is preferable. As the anode electrode material, for example, a transparent material such as ITO (indium tin oxide) or IZO (indium zinc oxide) is used.
【００１１】この新しい素子構造を有する本発明の有機
ＥＬ素子は、次の点で従来の有機ＥＬ素子とは大きく異
なる特徴を持つ。まず、従来の有機ＥＬ素子において
は、素子内に注入された電子数と放出された光子数の比
率である量子効率の上限は理論上、１（＝１００％）で
あったが、本発明による有機ＥＬ素子においては、理論
上の限界はない。何故なら図２に示されるホール（ｈ
＋）注入は有機分子の基底状態の分子軌道からの電子の
引き抜きを意味しており、等電位面の陰極側に接する層
の基底状態の分子軌道から引き抜かれた電子は、陽極側
に接する層の励起状態の分子軌道に注入されることで発
光性励起状態を作り出すために再利用されるからであ
る。従って、等電位面として定義された層によって仕切
られた複数個の発光ユニットの量子効率の総和が本発明
の有機ＥＬ素子の量子効率となり、その値に上限は無
い。つまり、本発明の有機ＥＬ素子は、従来の有機ＥＬ
素子が複数個、金属導線によって直列に接続されている
状態と回路的には同一であるが、等電位面が透明な膜構
造であるため、依然として従来の有機ＥＬ素子と同様の
面状発光が可能である。The organic EL device of the present invention having this new device structure has the following features which are greatly different from those of the conventional organic EL device. First, in a conventional organic EL device, the upper limit of quantum efficiency, which is the ratio of the number of electrons injected into the device to the number of emitted photons, is theoretically 1 (= 100%). There is no theoretical limit in the organic EL element. Because the hole (h
+) Injection means the extraction of electrons from the ground state molecular orbital of the organic molecule, and the electrons extracted from the ground state molecular orbital of the layer in contact with the cathode side of the equipotential surface are the layers in contact with the anode side. Is injected into the molecular orbital of the excited state and is reused to create a luminescent excited state. Therefore, the sum of the quantum efficiencies of the plurality of light emitting units partitioned by the layer defined as the equipotential surface is the quantum efficiency of the organic EL device of the present invention, and there is no upper limit to the value. That is, the organic EL element of the present invention is a conventional organic EL device.
The circuit is the same as the state where a plurality of elements are connected in series by metal conductors, but since the equipotential surface is a transparent film structure, the planar light emission similar to that of the conventional organic EL element is still generated. It is possible.
【００１２】勿論、本発明の有機ＥＬ素子は、従来の有
機ＥＬ素子が複数個（ｎ個）、直列に接続された構造を
有するため、駆動電圧は各発光ユニットによって消費さ
れる電位降下分（Ｖn）の総和（Ｖ＝Ｖ1＋Ｖ2 ＋……Ｖ
n）であることは、言うまでもない。従って、従来の有
機ＥＬ素子の利点であるとされてきた１０Ｖ以下での低
駆動電圧は、発光ユニットの数（ｎ）が増えれば増える
ほど実現不可能となるのは、本発明の素子においては当
然である。にも拘わらず、本発明の有機ＥＬ素子は、従
来の有機ＥＬ素子と比較していくつかの優位点を有す
る。まず、有機ＥＬ素子の輝度は、電流密度にほぼ比例
するため、高輝度を得ようとすれば、必然的に高い電流
密度が必要である。一方、素子寿命は（駆動電圧ではな
く）電流密度に反比例し、従って高輝度発光は、素子寿
命を短くする。しかしながら、本発明の有機ＥＬ素子
は、例えばｎ倍の輝度を得たい場合は、電極間に存在す
る同一の構成の発光ユニットをｎ個とし、電流密度をほ
ぼ一定に保ったまま実現できる。この時、前述の通り駆
動電圧もｎ倍、もしくはそれ以上になるのは当然である
が、ｎ倍の高輝度が寿命を犠牲にせずに実現できること
の利点は、計り知れない。Of course, since the organic EL device of the present invention has a structure in which a plurality (n) of conventional organic EL devices are connected in series, the driving voltage is equal to the potential drop (consumption) of each light emitting unit. Sum of Vn) (V = V 1 + V 2 + ... V
It goes without saying that it is n). Therefore, in the device of the present invention, the low driving voltage of 10 V or less, which has been considered to be an advantage of the conventional organic EL device, cannot be realized as the number (n) of light emitting units increases. Of course. Nevertheless, the organic EL device of the present invention has some advantages over conventional organic EL devices. First, since the brightness of the organic EL element is almost proportional to the current density, a high current density is inevitably required to obtain high brightness. On the other hand, the device lifetime is inversely proportional to the current density (rather than the driving voltage), and thus high brightness light emission shortens the device lifetime. However, the organic EL element of the present invention can be realized, for example, when it is desired to obtain a brightness of n times, with n light emitting units having the same structure existing between the electrodes and keeping the current density substantially constant. At this time, it is natural that the driving voltage is n times or more as described above, but the merit that the n times higher brightness can be realized without sacrificing the life is immeasurable.
【００１３】その他に、例えば、単純マトリクス構造の
表示ディスプレイを応用例とした場合は、電流密度の減
少は、配線抵抗による電圧降下や基板の温度上昇を従来
の場合に比べて大きく低減出来る点で、本発明の素子構
造は有利である。また、発光素子部分の電圧が従来の素
子に比べて高いことは、配線抵抗による電圧降下分が輝
度減少にさほど影響を与えないことを意味し、ただでさ
え配線部分の電圧降下が小さい本発明の素子構造の特徴
と相俟って、従来の素子では不可能であった定電圧制御
による単純マトリクス構造の表示デバイスの実現が可能
であることも意味する。In addition, for example, when a display having a simple matrix structure is used as an application example, the decrease in current density can significantly reduce the voltage drop due to the wiring resistance and the substrate temperature increase as compared with the conventional case. The device structure of the present invention is advantageous. In addition, the fact that the voltage of the light emitting element portion is higher than that of the conventional element means that the voltage drop due to the wiring resistance does not significantly affect the luminance reduction, and the voltage drop of the wiring portion is small in the present invention. Combined with the characteristics of the element structure of 1., it also means that it is possible to realize a display device having a simple matrix structure by constant voltage control, which was impossible with conventional elements.
【００１４】[0014]
【実施例】図３は、本発明による有機ＥＬ素子の積層構
造を示す略示断面図である。ガラス基板（透明基板）１
上には、順に、陽極電極を構成する透明電極２、発光ユ
ニット３−１、等電位面４−１、発光ユニット３−２、
等電位面４−２、．．．．．、等電位面４−（ｎ−
１）、発光ユニット３−ｎと繰り返され、最後に陰極電
極５が積層されている。これらの要素（層）のうち、ガ
ラス基板（透明基板）１、透明電極２、発光ユニット
（３−ｎ、但しｎ＝１、２、３……）、陰極電極５は周
知の要素であり、等電位面（４−ｎ、但しｎ＝１、２、
３……）によって仕切られた、発光ユニット（３−ｎ、
但しｎ＝１、２、３……）が複数個、両電極間に存在
する点が本発明の有機ＥＬ素子の新しい点である。EXAMPLE FIG. 3 is a schematic sectional view showing a laminated structure of an organic EL device according to the present invention. Glass substrate (transparent substrate) 1
Above, in order, the transparent electrode 2 forming the anode electrode, the light emitting unit 3-1, the equipotential surface 4-1, the light emitting unit 3-2,
Equipotential surfaces 4-2 ,. ． ． ． ． , Equipotential surface 4- (n-
1) and the light emitting unit 3-n are repeated, and finally the cathode electrode 5 is laminated. Among these elements (layers), the glass substrate (transparent substrate) 1, the transparent electrode 2, the light emitting unit (3-n, where n = 1, 2, 3, ...) And the cathode electrode 5 are known elements, Equipotential surface (4-n, where n = 1, 2,
3 ...), the light emitting unit (3-n,
However, a new point of the organic EL element of the present invention is that a plurality of n = 1, 2, 3, ...) Exist between both electrodes.
【００１５】また、有機ＥＬ素子は、電極材料の持つ性
質の一つである仕事関数が素子の特性（駆動電圧等）を
左右するといわれている。本発明の有機ＥＬ素子におけ
る等電位面（４−ｎ）は、陽極電極方向に電子、陰極電
極方向にホールを注入しているため、上記の発光ユニッ
トの構成要素のうち特に電子注入（輸送）層とホール注
入（輸送）層の形成法は、各発光ユニットへの電荷（電
子及びホール）注入に際しての、エネルギー障壁を低減
するためには重要な要素となる。In the organic EL element, it is said that the work function, which is one of the properties of the electrode material, affects the characteristics (driving voltage etc.) of the element. The equipotential surface (4-n) in the organic EL element of the present invention injects electrons in the direction of the anode electrode and holes in the direction of the cathode electrode. The method of forming the layer and the hole injection (transport) layer is an important factor for reducing the energy barrier at the time of injecting charges (electrons and holes) into each light emitting unit.
【００１６】例えば、各等電位面（４−ｎ）から陽電極
側に電子注入をする際には、特開平１０−２７０１７１
号公報に開示されているように、発光ユニットを、等電
位面の陽極側に接する層として、有機化合物と電子供与
性（ドナー）ドーパントとして機能する金属との混合層
からなる電子注入層を有する構成とするのが好ましい。
ここで、ドナードーパントは、仕事関数が４．２ｅＶ以
下のアルカリ金属、アルカリ土類金属及び希土類金属の
うちから選択された１種以上の金属からなるのが好まし
い。これらの金属の詳細については、特開平１０−２７
０１７１号公報に記載されている。また、上記の電子注
入層中のドナードーパント金属のモル比率は、有機化合
物に対して０．１〜１０であるのが好ましい。このモル
比率が０．１未満では、ドーパントにより還元された分
子（以下、還元分子）の濃度が低過ぎ、ドーピング効果
が小さく、１０倍を超えると、膜中のドーパント濃度が
有機分子濃度をはるかに超え、還元分子の膜中濃度が極
端に低下するので、ドーピングの効果も下がってしま
う。上記のような電子注入層を有する構成の発光ユニッ
トとすることにより、等電位面を形成する材料の仕事関
数に拘わらず、エネルギー障壁のない、電子注入が実現
される。For example, when injecting electrons from each equipotential surface (4-n) to the positive electrode side, JP-A-10-270171 is used.
As disclosed in Japanese Patent Publication (Kokai) No. JP-A No. 2003-242242, the light emitting unit has an electron injection layer composed of a mixed layer of an organic compound and a metal functioning as an electron donating (donor) dopant, as a layer in contact with the equipotential surface on the anode side. It is preferable to have a structure.
Here, the donor dopant is preferably made of one or more metals selected from alkali metals, alkaline earth metals and rare earth metals having a work function of 4.2 eV or less. For details of these metals, see JP-A-10-27.
No. 0171. The molar ratio of the donor dopant metal in the electron injection layer is preferably 0.1-10 with respect to the organic compound. If the molar ratio is less than 0.1, the concentration of molecules reduced by the dopant (hereinafter referred to as reduced molecules) is too low, and the doping effect is small, and if it exceeds 10 times, the concentration of the dopant in the film is much higher than the concentration of organic molecules. And the concentration of reducing molecules in the film is extremely reduced, so that the doping effect is also reduced. By using the light emitting unit having the above-described electron injection layer, electron injection without an energy barrier is realized regardless of the work function of the material forming the equipotential surface.
【００１７】また、発光ユニットは、等電位面の陽極側
に接する層として、アルカリ金属、アルカリ土類金属及
び希土類金属のうちから選択される金属からなる膜厚が
５ｎｍ以下、好ましくは０．２〜５ｎｍの層からなる電
子注入層を有する構成であってもよい。この膜厚が５ｎ
ｍを超えると、光の透過率が減少してしまうと同時に、
反応性が高く、空気中で不安定な該金属が過剰に存在す
ることで、素子を不安定にすることも知られているので
好ましくない。さらに、特開平１１−２３３２６２号公
報及び特開２０００−１８２７７４号公報に記載の「有
機金属錯体（該錯体化合物中の金属イオンは、アルカリ
金属、アルカリ土類金属、希土類金属等の低仕事関数金
属から選択される）と該有機金属錯体中の金属イオンを
真空中で金属に還元する金属との組み合わせ」からなる
電子注入層を採用し、使用する還元金属（Ａｌ、Ｚｒ、
Ｓｉ、Ｔｉ等）の膜厚を透明性を確保出来る程度に極薄
にして、電子注入層としてもよい。Further, the light emitting unit has a film thickness of 5 nm or less, preferably 0.2, made of a metal selected from alkali metals, alkaline earth metals and rare earth metals as a layer in contact with the equipotential surface on the anode side. A structure having an electron injection layer made of a layer of ˜5 nm may be used. This film thickness is 5n
When it exceeds m, the light transmittance decreases, and at the same time,
It is also known that the presence of an excessive amount of the metal that is highly reactive and unstable in air makes the device unstable, which is not preferable. Furthermore, “organic metal complexes (metal ions in the complex compounds are low work function metals such as alkali metals, alkaline earth metals, and rare earth metals, and the like are described in JP-A Nos. 11-233262 and 2000-182774. And a metal that reduces metal ions in the organometallic complex to a metal in a vacuum ”, and the reduction metal (Al, Zr,
The electron injection layer may be made as thin as possible (Si, Ti, etc.) so as to ensure transparency.
【００１８】また例えば、各等電位面（４−ｎ）から陰
電極側にホール注入する際には、本発明者らが特開平１
１−２５１０６７号公報において提案した有機物をルイ
ス酸化学的に酸化しうる性質を有する電子受容性化合物
（ルイス酸化合物）がドープされたホール注入層を等電
位面の陰極側に接触する層として形成しておくと、等電
位面（４−ｎ）を形成する材料の仕事関数に拘わらず、
エネルギー障壁のない、ホール注入を実現することがで
きる。さらに、透明性を確保出来る極薄の電子受容性化
合物（ルイス酸化合物）層を形成して、ホール注入層と
してもよい。この場合、膜厚は３０ｎｍ以下とするのが
好ましく、０．５〜３０ｎｍの範囲とするのが好まし
い。膜厚が３０ｎｍを超えると、光の透過率が減少して
しまうと同時に、反応性が高く、空気中で不安定な該ル
イス酸化合物が過剰に存在することで、素子を不安定に
することも知られているので、好ましくない。Further, for example, when injecting holes from each equipotential surface (4-n) to the negative electrode side, the inventors of the present invention have disclosed in Japanese Patent Laid-Open No.
A hole injection layer doped with an electron-accepting compound (Lewis acid compound) having a property capable of Lewis organic oxidation, which is proposed in JP-A 1-251067, is formed as a layer in contact with the cathode side of an equipotential surface. That is, regardless of the work function of the material forming the equipotential surface (4-n),
Hole injection without an energy barrier can be realized. Furthermore, an extremely thin electron-accepting compound (Lewis acid compound) layer capable of ensuring transparency may be formed as a hole injection layer. In this case, the film thickness is preferably 30 nm or less, more preferably 0.5 to 30 nm. When the film thickness exceeds 30 nm, the light transmittance decreases, and at the same time, the presence of the Lewis acid compound, which is highly reactive and unstable in the air, makes the device unstable. Is also known and is not preferable.
【００１９】電子受容性化合物（ルイス酸化合物）とし
ては、特に制限はないが、例えば、塩化第２鉄、 臭化
第２鉄、 ヨウ化第２鉄、塩化アルミニウム、臭化アル
ミニウム、 ヨウ化アルミニウム、塩化ガリウム、臭化
ガリウム、ヨウ化ガリウム、塩化インジウム、臭化イン
ジウム、ヨウ化インジウム、５塩化アンチモン、５フッ
化砒素、３フッ化硼素等の無機化合物や、ＤＤＱ（ジシ
アノ−ジクロロキノン）、ＴＮＦ（トリニトロフルオレ
ノン）、ＴＣＮＱ（テトラシアノキノジメタン）、４Ｆ
−ＴＣＮＱ（テトラフルオロ−テトラシアノキノジメタ
ン等の有機化合物を使用することができる。ホール注入
層中の有機化合物と電子受容性化合物（ドーパント化合
物）のモル比率は、有機化合物に対して０．１〜１０の
範囲であるのが好ましい。ドーパントの比率が０．１未
満であるとドーパントにより酸化された分子（以下、酸
化分子と称することがある）の濃度が低過ぎ、ドーピン
グの効果が小さく、１０倍を超えると、膜中のドーパン
ト濃度が有機分子濃度をはるかに超え、酸化分子の膜中
濃度が極端に低下するので、ドーピングの効果も下が
る。The electron-accepting compound (Lewis acid compound) is not particularly limited, and examples thereof include ferric chloride, ferric bromide, ferric iodide, aluminum chloride, aluminum bromide and aluminum iodide. Inorganic compounds such as gallium chloride, gallium bromide, gallium iodide, indium chloride, indium bromide, indium iodide, antimony pentachloride, arsenic trifluoride, boron trifluoride, DDQ (dicyano-dichloroquinone), TNF (trinitrofluorenone), TCNQ (tetracyanoquinodimethane), 4F
An organic compound such as -TCNQ (tetrafluoro-tetracyanoquinodimethane can be used. The molar ratio of the organic compound and the electron-accepting compound (dopant compound) in the hole injection layer is 0. It is preferably in the range of 1 to 10. When the ratio of the dopant is less than 0.1, the concentration of molecules oxidized by the dopant (hereinafter sometimes referred to as oxidized molecules) is too low, and the doping effect is small. If it exceeds 10 times, the concentration of dopant in the film will far exceed the concentration of organic molecules, and the concentration of oxide molecules in the film will be extremely reduced, so that the doping effect will also be reduced.
【００２０】本発明に用いる発光ユニットにおいて、陰
極や陽極に直接接している層に関しては、それぞれ等電
位面の陽極側に接する層、等電位面の陰極側に接する層
と同一構成にしてもよいし、組成の異なる電子注入層や
ホール注入層を使用することもできる。もちろん、従来
の有機ＥＬ素子に使用されてきた電子注入層やホール注
入層をそのまま好適に使用することができる。In the light emitting unit used in the present invention, the layers in direct contact with the cathode and the anode may have the same structure as the layer in contact with the anode side of the equipotential surface and the layer in contact with the cathode side of the equipotential surface, respectively. However, an electron injection layer or a hole injection layer having a different composition can also be used. Of course, the electron injection layer and the hole injection layer used in the conventional organic EL element can be preferably used as they are.
【００２１】[0021]
【実施例】以下に実施例を挙げて本発明をさらに詳細に
説明するが、本発明はこれにより限定されるものではな
い。なお、有機化合物、金属及び透明導電膜の成膜に
は、日本ビーテック製真空蒸着機及びＦＴＳコーポレー
ション製ＮＦＴＳスパッタリング装置を使用した。膜厚
の測定には、テンコール社製Ｐ１０触針式段差計を用い
た。素子の特性評価には、ケースレー（keithley）社ソ
ースメータ２４００、トプコンＢＭ−８輝度計を使用し
た。素子のＩＴＯを陽極、Ａｌを陰極として直流電圧を
０．２Ｖ／２秒の割合でステップ状に印加し、電圧上昇
１秒後の輝度及び電流値を測定した。また、ＥＬスペク
トルは、浜松ホトニクスＰＭＡ−１１オプチカルマルチ
チャンネルアナライザーを使用して定電流駆動し測定し
た。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto. The organic compound, the metal, and the transparent conductive film were formed using a vacuum deposition machine manufactured by Nippon Betech and an NFTS sputtering device manufactured by FTS Corporation. A P10 stylus profilometer manufactured by Tencor Co. was used for measuring the film thickness. A source meter 2400 from Keithley and a Topcon BM-8 luminance meter were used to evaluate the characteristics of the device. A direct current voltage was applied stepwise at a rate of 0.2 V / 2 seconds using ITO of the device as an anode and Al as a cathode, and the brightness and current value after 1 second of voltage increase were measured. The EL spectrum was measured with a constant current drive using a Hamamatsu Photonics PMA-11 optical multi-channel analyzer.
【００２２】基準例（従来の有機ＥＬ素子の作製例）
図４に示した積層構造を有する従来の有機ＥＬ素子を下
記のようにして作製した。ガラス基板１上には、陽極透
明電極２として、シート抵抗２０Ω／□のＩＴＯ（イン
ジウム・すず酸化物、三容真空社製スパッタ蒸着品）が
所定パターンにコートされている〔図９の（ａ）参
照〕。その上に有機物成膜用金属マスク〔図９の
（ｂ）〕を介して正孔輸送性を有する下記式（１）：Reference Example (Preparation Example of Conventional Organic EL Element) A conventional organic EL element having the laminated structure shown in FIG. 4 was prepared as follows. On the glass substrate 1, ITO (indium tin oxide, a sputter-deposited product manufactured by Sanyo Vacuum Co., Ltd.) having a sheet resistance of 20 Ω / □ is coated in a predetermined pattern as the anode transparent electrode 2 [(a in FIG. 9A. )reference〕. Further, the following formula (1) having a hole transporting property through a metal mask for forming an organic substance film [(b) of FIG. 9]:
【化１】
で表されるαＮＰＤを１０-6torr下で、２Å／秒の蒸着
速度で６００Åの厚さに成膜し、ホール輸送層６を形成
した。[Chemical 1] The hole transport layer 6 was formed by depositing αNPD represented by the following formula at a deposition rate of 2Å / sec to a thickness of 600Å under 10 −6 torr.
【００２３】次に、前記ホール輸送層の上に、発光層７
として下記式（２）：Next, the light emitting layer 7 is formed on the hole transport layer.
As the following formula (2):
【化２】
で表されるトリス（８−キノリノラト）アルミニウム錯
体（以下、Alqと略記することがある）と、緑色発光蛍
光色素であるクマリン誘導体〔商品名：ＮＫＸ−１５９
５）（日本感光色素社製）〕を、この蛍光色素が１重量
％の濃度となるように各々の蒸着速度を調整して４００
Åの厚さに成膜した。[Chemical 2] And a tris (8-quinolinolato) aluminum complex represented by (hereinafter sometimes abbreviated as Alq) and a coumarin derivative that is a green-emitting fluorescent dye [trade name: NKX-159.
5) (manufactured by Nihon Senshi Dye Co., Ltd.)] was adjusted to 400% by adjusting each vapor deposition rate so that the concentration of this fluorescent dye was 1% by weight.
The film was formed to a thickness of Å.
【００２４】次に、前記発光層７の上に特開平１０−２
７０１７１号公報に記載の金属ドーピング電子注入層８
として、下記式（３）：Then, the light-emitting layer 7 is formed on the light-emitting layer 7 as described in JP-A-10-2.
No. 70171, Metal-Doped Electron Injection Layer 8
As the following formula (3):
【化３】
で示されるバソクプロインと金属セシウム（Cs）をモル
比で１：１となるように各々の蒸着速度を調整して３０
０Åの厚さに成膜した。[Chemical 3] The vapor deposition rate of bathocuproine and metallic cesium (Cs) shown in
A film was formed to a thickness of 0Å.
【００２５】次に、陰極電極５として陰極成膜用金属マ
スク〔図９の（ｄ）参照〕を介してＡｌを蒸着速度１０
Å／秒で１０００Åの厚さ蒸着した。この工程によって
発光領域は縦０．２ｃｍ、横０．２ｃｍの正方形状とな
る。この有機ＥＬ素子において、陽極電極であるＩＴＯ
と陰極電極であるＡｌとの間に、直流電圧を印加し、発
光層（Alq：ＮＫＸ−１５９５の共蒸着層）からの緑色
発光の諸特性を測定した。図５、図６、図７及び図８中
の○プロットは、この素子（基準例）の輝度（cd／
ｍ2 )−電圧（Ｖ）特性、輝度（cd／ｍ2 )−電流密度
（mA／ｍ2 )特性、輝度（cd／ｍ2 )−電流効率（cd／
Ａ)、電流密度（mA/ｃｍ2 )−電流効率（cd／Ａ）を示
すものである。また、代表的輝度値での諸特性を表１に
まとめた。Next, as the cathode electrode 5, Al is vapor-deposited at a deposition rate of 10 through a metal mask for cathode film formation [see (d) of FIG. 9].
A vapor deposition of 1000 Å was deposited at Å / sec. By this step, the light emitting region becomes a square shape having a length of 0.2 cm and a width of 0.2 cm. In this organic EL element, ITO which is an anode electrode
A direct-current voltage was applied between the cathode and Al as the cathode electrode, and various characteristics of green light emission from the light emitting layer (Alq: NKX-1595 co-deposited layer) were measured. Plots in FIG. 5, FIG. 6, FIG. 7 and FIG. 8 indicate the luminance (cd / cd) of this device (reference example).
m 2 ) -voltage (V) characteristic, luminance (cd / m 2 ) -current density (mA / m 2 ) characteristic, luminance (cd / m 2 ) -current efficiency (cd /
A) shows current density (mA / cm 2 ) -current efficiency (cd / A). In addition, various characteristics at typical luminance values are summarized in Table 1.
【００２６】[0026]
【表１】 [Table 1]
【００２７】実施例１
基準例と同じく、図９の（ａ）に示した所定パターンに
コートされているＩＴＯ上に有機物成膜用金属マスク
〔図９の（ｂ）〕を介して、発光ユニット３−１を成膜
した。すなわち、αＮＰＤを６００Å、Alq：ＮＫＸ−
１５９５＝１００：１の層を４００Å、バソクプロイン
と金属セシウム（Cs）の混合層を３００Åの厚さに順次
成膜した。次に、前記金属ドーピング層の上に等電位面
４−１として、ＩＴＯを本発明者らが特願２００１−１
４２６７２号で提案したスパッタリングの手法を用い
て、成膜速度４Å／秒で１００Åの厚さに成膜した。こ
の層（等電位面）は発光エリアと一致する様、縦０．２
ｃｍ、横０．２ｃｍの正方形状のみに成膜するため、金
属マスク〔図９の（ｃ）〕を用いて成膜した。次に、有
機物成膜用金属マスク（図９の（ｂ））にもどして前述
の工程をもう一度繰り返し発光ユニット３−２を成膜し
た。すなわち、αＮＰＤを６００Å、Alq：NKX-1595＝
１００：１の層を４００Å、バソクプロインと金属セシ
ウム（Cs）の混合層を３００Åの厚さに、順次成膜し
た。最後に、陰極電極５として陰極成膜用金属マスク
〔図９の（ｄ）〕を介して、Ａｌを蒸着速度１０Å／秒
で１０００Åの厚さに蒸着し、図９の（ｅ）に示したパ
ターンを有する有機ＥＬ素子を得た。該工程によって発
光領域は縦０．２ｃｍ、横０．２cmの正方形状とした。
この実施例１で得られた有機ＥＬ素子の鳥瞰図を図１１
に、積層構造を図１２に示す。この有機EL素子におい
て、陽極電極であるＩＴＯと陰極電極であるＡｌとの間
に、直流電圧を印加し、発光層（Alq：NKX-1595の共蒸
着層）からの緑色発光の諸特性を測定した。図５、図
６、 図７、図８中の□プロットは、この素子（実施例
１）の輝度（cd／ｍ2 )−電圧（Ｖ）特性、輝度（cd／
ｍ2 )−電流密度（mA／ｍ2 )特性、輝度（cd／ｍ2 )−
電流効率（cd／Ａ)、電流密度（mA/ｃｍ2 )−電流効率
（cd／Ａ）を示すものである。また、この実施例１で作
製した素子の代表的輝度値での諸特性を表２にまとめ
た。Example 1 Similar to the reference example, the light emitting unit was formed on the ITO coated in the predetermined pattern shown in FIG. 9A through the metal mask for forming an organic substance [FIG. 9B]. 3-1 was formed into a film. That is, αNPD is 600Å, Alq: NKX-
A layer of 1595 = 100: 1 was sequentially formed to a thickness of 400 Å, and a mixed layer of bathocuproine and metallic cesium (Cs) was sequentially formed to a thickness of 300 Å. Next, as the equipotential surface 4-1 on the metal doping layer, the inventors of the present invention applied ITO to Japanese Patent Application No. 2001-1.
Using the sputtering method proposed in No. 42672, a film was formed to a thickness of 100 Å at a film forming rate of 4 Å / sec. This layer (equipotential surface) has a vertical length of 0.2 to match the light emitting area.
The film was formed using a metal mask [(c) in FIG. 9] because the film is formed only in a square shape having a width of 0.2 cm and a width of 0.2 cm. Next, the light emitting unit 3-2 was formed into a film by returning to the organic film forming metal mask ((b) of FIG. 9) and repeating the above steps once again. That is, αNPD is 600Å, Alq: NKX-1595 =
A 100: 1 layer and a mixed layer of bathocuproine and metallic cesium (Cs) were sequentially formed to a thickness of 400Å and 300Å, respectively. Finally, as the cathode electrode 5, Al was vapor-deposited to a thickness of 1000 Å at a vapor deposition rate of 10 Å / sec through a metal mask for forming a cathode [(d) of FIG. 9], and the result is shown in FIG. 9 (e). An organic EL device having a pattern was obtained. Through this step, the light emitting region was formed into a square shape having a length of 0.2 cm and a width of 0.2 cm.
FIG. 11 is a bird's-eye view of the organic EL element obtained in this Example 1.
The laminated structure is shown in FIG. In this organic EL device, a direct current voltage was applied between ITO as an anode electrode and Al as a cathode electrode to measure various characteristics of green light emission from the light emitting layer (Alq: co-deposited layer of NKX-1595). did. The □ plots in FIGS. 5, 6, 7 and 8 indicate the luminance (cd / m 2 ) -voltage (V) characteristics and the luminance (cd / cd) of this device (Example 1).
m 2 ) -Current density (mA / m 2 ) characteristics, brightness (cd / m 2 )-
It shows current efficiency (cd / A), current density (mA / cm 2 ) -current efficiency (cd / A). Table 2 shows various characteristics of the device manufactured in Example 1 at typical brightness values.
【００２８】[0028]
【表２】 [Table 2]
【００２９】この様に発光ユニットが等電位面によって
仕切られて２個存在するこの有機ＥＬ素子は、基準例の
有機EL素子と比べて、ほぼ同輝度での電流効率（ひいて
は量子効率）を比較すると、ほぼ２倍の値を示した。ま
た、発光スペクトルを観察すると、ＮＫＸ−１５９５の
蛍光スペクトルとほぼ一致したが、スペクトルの半値幅
が基準例と比較して若干細くなった（図１０参照）の
は、２つの発光ユニットの内、最初に成膜した発光ユニ
ット３−１からの発光が陰極で反射され、その陰極での
反射光と、直接基板方向に放射された発光との位相がほ
ぼ一致したための、干渉効果によると考えられる。This organic EL element, in which two light-emitting units are partitioned by equipotential surfaces, is compared with the organic EL element of the reference example in current efficiency (and thus quantum efficiency) at almost the same brightness. Then, the value was almost doubled. In addition, when the emission spectrum was observed, it almost coincided with the fluorescence spectrum of NKX-1595, but the half-width of the spectrum was slightly narrower than that of the reference example (see FIG. 10). The light emitted from the light-emitting unit 3-1 formed first is reflected by the cathode, and the reflected light at the cathode and the light emitted directly toward the substrate are approximately in phase with each other, which is considered to be due to the interference effect. .
【００３０】[0030]
【発明の効果】本発明の有機ＥＬ素子は、電極間に複数
の発光ユニットを等電位面で仕切って配置することで、
電流密度を一定に保ったまま、従来の有機ＥＬ素子では
実現し得なかった高輝度領域での長寿命素子が実現可能
であり、照明を応用例とした場合は、電極材料の抵抗に
よる電圧降下を小さくできるので、大面積での均一発光
が可能となり、さらに、単純マトリクス構造の表示ディ
スプレイを応用例とした場合は、やはり、配線抵抗によ
る電圧降下や基板の温度上昇を大きく低減出来るので、
従来の素子では不可能と思われていた大面積単純マトリ
クス表示ディスプレイも実現可能となる。In the organic EL device of the present invention, by disposing a plurality of light emitting units between electrodes by dividing them by equipotential surfaces,
While maintaining a constant current density, it is possible to realize a long-life element in a high-brightness region that could not be realized with conventional organic EL elements. When using lighting as an application example, voltage drop due to the resistance of the electrode material Since it is possible to reduce the size, uniform light emission in a large area is possible, and when a display with a simple matrix structure is used as an application example, the voltage drop and the temperature rise of the substrate due to the wiring resistance can be greatly reduced.
A large area simple matrix display, which was thought to be impossible with conventional devices, can also be realized.
【図１】従来の有機ＥＬ素子の動作機構を示す説明図で
ある。FIG. 1 is an explanatory diagram showing an operating mechanism of a conventional organic EL element.
【図２】本発明の有機ＥＬ素子の動作機構を示す説明図
である。FIG. 2 is an explanatory diagram showing an operating mechanism of the organic EL element of the present invention.
【図３】本発明の有機ＥＬ素子の積層構造を示す略示断
面図である。FIG. 3 is a schematic cross-sectional view showing a laminated structure of an organic EL element of the present invention.
【図４】従来の有機ＥＬ素子の積層構造を示す略示断面
図である。FIG. 4 is a schematic cross-sectional view showing a laminated structure of a conventional organic EL element.
【図５】基準例と本発明の実施例１で作製した有機ＥＬ
素子の駆動電圧−輝度特性を示すグラフである。FIG. 5: Organic EL manufactured in Reference Example and Example 1 of the present invention
6 is a graph showing a drive voltage-luminance characteristic of an element.
【図６】基準例と本発明の実施例１で作製した有機ＥＬ
素子の駆動電圧−電流密度特性を示すグラフである。FIG. 6 is a reference example and an organic EL manufactured in Example 1 of the present invention.
7 is a graph showing a drive voltage-current density characteristic of the element.
【図７】基準例と本発明の実施例１で作製した有機ＥＬ
素子の輝度−電流効率特性を示すグラフである。FIG. 7: Reference example and organic EL produced in Example 1 of the present invention
It is a graph which shows the brightness-current efficiency characteristic of an element.
【図８】基準例と本発明の実施例１で作製した有機ＥＬ
素子の電流密度−電流効率特性を示すグラフである。FIG. 8: Organic EL manufactured in a reference example and Example 1 of the present invention
It is a graph which shows the current density-current efficiency characteristic of an element.
【図９】本発明の有機ＥＬ素子の製造工程図である。FIG. 9 is a manufacturing process drawing of the organic EL element of the present invention.
【図１０】基準例と本発明の実施例１で作製した有機Ｅ
Ｌ素子の発光スペクトル図である。FIG. 10: Organic E prepared in Reference Example and Example 1 of the present invention
It is an emission spectrum figure of L element.
【図１１】本発明の有機ＥＬ素子の断面構造を表す鳥瞰
図である。FIG. 11 is a bird's-eye view showing a cross-sectional structure of the organic EL element of the present invention.
【図１２】実施例１で作製した有機ＥＬ素子の積層構造
を示す略示断面図である。FIG. 12 is a schematic cross-sectional view showing a laminated structure of the organic EL element produced in Example 1.
１ 透明基板 ２ 透明陽極電極 ３−１ 発光ユニット ３−２ 発光ユニット ３−ｎ 発光ユニット ４−１ 等電位面 ４−２ 等電位面 ４−ｎ 等電位面 ５ 陰極電極 ６ ホール輸送層 ７ 発光層 ８ 電子注入層 1 transparent substrate 2 Transparent anode electrode 3-1 Light emitting unit 3-2 Light emitting unit 3-n light emitting unit 4-1 Equipotential surface 4-2 Equipotential surface 4-n equipotential surface 5 Cathode electrode 6 hole transport layer 7 Light-emitting layer 8 Electron injection layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０５Ｂ 33/26 Ｈ０５Ｂ 33/26 Ａ (72)発明者 水上 時雄 神奈川県藤沢市桐原町３番地 株式会社ア イメス内 Ｆターム(参考） 3K007 AB02 AB03 AB11 BA05 CA01 CB01 CB03 CC00 DA01 DB03 EB00 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H05B 33/26 H05B 33/26 A (72) Inventor Tokio Mizukami 3 Kirihara-cho, Fujisawa-shi, Kanagawa F term in IMES (reference) 3K007 AB02 AB03 AB11 BA05 CA01 CB01 CB03 CC00 DA01 DB03 EB00
Claims (16)
個の発光ユニットを有し、各発光ユニットがそれぞれ１
層の等電位面を形成する層によって仕切られていること
を特徴とする有機エレクトロルミネッセント素子。1. A plurality of light emitting units are provided between opposing anode and cathode electrodes, and each light emitting unit has one light emitting unit.
An organic electroluminescent element characterized by being partitioned by layers forming equipotential surfaces of the layers.
を形成する層が可視光の透過率５０％以上の透明導電材
料からなる有機エレクトロルミネッセント素子。2. The organic electroluminescent device according to claim 1, wherein the layer forming the equipotential surface is made of a transparent conductive material having a visible light transmittance of 50% or more.
を形成する層が可視光の透過率５０％以上の金属又は合
金からなる膜厚１０ｎｍ以下の層である有機エレクトロ
ルミネッセント素子。3. The organic electroluminescent device according to claim 1, wherein the layer forming the equipotential surface is a layer having a film thickness of 10 nm or less and made of a metal or an alloy having a visible light transmittance of 50% or more.
を形成する層が有機物からなる有機エレクトロルミネッ
セント素子。4. The organic electroluminescent device according to claim 1, wherein the layer forming the equipotential surface is made of an organic material.
ットが、等電位面の陽極側に接する層として、有機化合
物と電子供与性ドーパントとして機能する金属との混合
層からなる電子注入層を有する有機エレクトロルミネッ
セント素子。5. The device according to claim 1, wherein the light emitting unit has an electron injection layer made of a mixed layer of an organic compound and a metal functioning as an electron donating dopant, as a layer in contact with the anode side of the equipotential surface. Organic electroluminescent device.
性ドーパントが、仕事関数が４．２ｅＶ以下のアルカリ
金属、アルカリ土類金属及び希土類金属のうちから選択
された１種以上の金属からなる有機エレクトロルミネッ
セント素子。6. The device according to claim 5, wherein the electron donating dopant is one or more metals selected from alkali metals, alkaline earth metals and rare earth metals having a work function of 4.2 eV or less. Organic electroluminescent device.
子注入層中の電子供与性ドーパント金属のモル比率が、
有機化合物に対して０．１〜１０である有機エレクトロ
ルミネッセント素子。7. The device according to claim 5 or 6, wherein the electron donating dopant metal in the electron injection layer has a molar ratio of
An organic electroluminescent device, which is 0.1 to 10 relative to the organic compound.
ットが、等電位面の陽極側に接する層として、アルカリ
金属、アルカリ土類金属及び希土類金属のうちから選択
される金属からなる膜厚が５ｎｍ以下の層からなる電子
注入層を有する有機エレクトロルミネッセント素子。8. The device according to claim 1, wherein the light emitting unit has a film thickness of a metal selected from alkali metals, alkaline earth metals and rare earth metals as a layer in contact with the anode side of the equipotential surface. An organic electroluminescent device having an electron injection layer composed of a layer of 5 nm or less.
ットが、等電位面の陽極側に接する層として、アルカリ
金属イオン、アルカリ土類金属イオン及び希土類金属イ
オンのうちの少なくとも１種を含有する有機金属錯体化
合物に含有される金属イオンを真空中において金属に還
元しうる金属で還元して生成した金属と有機化合物とか
らなる電子注入層を有する有機エレクトロルミネッセン
ト素子。9. The device according to claim 1, wherein the light emitting unit contains at least one kind of alkali metal ion, alkaline earth metal ion and rare earth metal ion as a layer in contact with the anode side of the equipotential surface. An organic electroluminescent device having an electron injection layer composed of an organic compound and a metal produced by reducing a metal ion contained in an organometallic complex compound with a metal capable of being reduced to a metal in vacuum.
ニットが、等電位面の陰極側に接する層として、有機化
合物と、該有機物をルイス酸化学的に酸化しうる性質を
有する電子受容性化合物とを混合してなるホール注入層
を有する有機エレクトロルミネッセント素子。10. The device according to claim 1, wherein the light emitting unit is a layer in contact with the cathode side of the equipotential surface, and an organic compound and an electron accepting compound having a property of being capable of oxidizing the organic substance in a Lewis oxidative manner. An organic electroluminescent device having a hole injection layer formed by mixing and.
ル注入層中の有機物をルイス酸化学的に酸化しうる性質
を有する電子受容性化合物のモル比率が、有機化合物に
対して０．１〜１０である有機エレクトロルミネッセン
ト素子。11. The device according to claim 10, wherein the molar ratio of the electron-accepting compound having a property capable of Lewis-oxidatively oxidizing an organic substance in the hole injection layer is 0.1 to 10 with respect to the organic compound. Is an organic electroluminescent device.
ニットが、等電位面の陰極側に接する層として、電子受
容性化合物からなる膜厚３０ｎｍ以下のホール注入層を
有する有機エレクトロルミネッセント素子。12. The organic electroluminescent device according to claim 1, wherein the light emitting unit has, as a layer in contact with the cathode side of the equipotential surface, a hole injection layer made of an electron accepting compound and having a thickness of 30 nm or less. .
載の素子において、電子受容性化合物が無機ルイス酸化
合物又は有機化合物である有機エレクトロルミネッセン
ト素子。13. The organic electroluminescent device according to claim 10, wherein the electron-accepting compound is an inorganic Lewis acid compound or an organic compound.
発光ユニットが互いに異なる発光スペクトルを有する有
機エレクトロルミネッセント素子。14. The organic electroluminescent device according to claim 1, wherein the plurality of light emitting units have emission spectra different from each other.
ユニットからの発光の重ね合わせによって発光色が白色
である有機エレクトロルミネッセント素子。15. The organic electroluminescent device according to claim 1, wherein the emission color is white due to the superposition of light emitted from each light emitting unit.
発光ユニットのうち少なくとも一つの発光ユニットが燐
光発光材料を含む発光層を有する有機エレクトロルミネ
ッセント素子。16. The organic electroluminescent device according to claim 1, wherein at least one of the plurality of light emitting units has a light emitting layer containing a phosphorescent material.
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|---|---|---|---|
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