JP2003041377A - CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE - Google Patents

CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE

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Publication number
JP2003041377A
JP2003041377A JP2001234795A JP2001234795A JP2003041377A JP 2003041377 A JP2003041377 A JP 2003041377A JP 2001234795 A JP2001234795 A JP 2001234795A JP 2001234795 A JP2001234795 A JP 2001234795A JP 2003041377 A JP2003041377 A JP 2003041377A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
less
magnetic disk
water temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001234795A
Other languages
Japanese (ja)
Inventor
Shinya Abe
慎哉 安部
Masahiro Miyazaki
雅洋 宮崎
Kiyoshi Tada
清志 多田
Hiroshi Hatayama
博史 畑山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2001234795A priority Critical patent/JP2003041377A/en
Publication of JP2003041377A publication Critical patent/JP2003041377A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Chemically Coating (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce a quantity of adhering water and variations of the quantity originating in rinsing water after a plating step, in a cleaning method for a Ni-P plated substrate such as a magnetic disk substrate. SOLUTION: The method for cleaning the Ni-P plating substrate in a process of performing Ni-P plating on an aluminum substrate and then immersing the plating substrate in rinse water, comprises keeping the temperature (T) of the above rinse water at 50 deg.C or higher, and controlling a raising speed (V) of raising the above plating substrate from the above rinse water, according to the rinse water temperature (T). As for the relation of the rinse water temperature (T) and the raising speed (V), the above raising speed (V) is preferably 0.015 m/sec or less against 60 deg.C or lower of the above rinse water temperature (T), similarly 0.02 m/sec or less against 60 deg.C or higher but lower than 70 deg.C, 0.025 m/sec or less against 70 deg.C or higher but lower than 80 deg.C, and 0.05 m/sec or less against 80 deg.C or higher.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、アルミニウムサ
ブストレートにNi−PめっきされたNi−Pめっき基
材の洗浄方法、ならびに磁気ディスク装置の記憶媒体の
基板として用いられる磁気ディスク基板の製造方法およ
びこの方法によって製造される磁気ディスク基板に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a Ni-P plated base material plated with Ni-P on an aluminum substrate, and a method for manufacturing a magnetic disk substrate used as a substrate for a storage medium of a magnetic disk device. The present invention relates to a magnetic disk substrate manufactured by this method.

【0002】なお、この明細書において、「アルミニウ
ム」の語はアルミニウムおよびその合金の両者を含む意
味で用いられる。
In this specification, the term "aluminum" is used to include both aluminum and its alloys.

【0003】[0003]

【従来の技術】アルミニウムのめっき製品の一つにNi
−Pめっきされた磁気ディスク基板があり、基板表面に
磁性膜を形成して磁気ディスク装置の記録媒体として用
いられている。
2. Description of the Related Art Ni is one of aluminum plated products.
There is a magnetic disk substrate plated with -P, and a magnetic film is formed on the surface of the substrate to be used as a recording medium of a magnetic disk device.

【0004】前記磁気ディスク基板に対しては、磁気デ
ィスク装置における記録密度の高容量化に伴い、表面粗
さが小さく欠陥のないものが求められている。このた
め、従前では問題にならなかった微小サイズの欠陥につ
いても、除去が必要となる。
With respect to the magnetic disk substrate, it is required that the surface roughness is small and there is no defect as the recording density of the magnetic disk device is increased. Therefore, it is necessary to remove even a minute size defect which has not been a problem in the past.

【0005】例えば、上述のNi−Pめっきされた磁気
ディスク基板には、PED(PolishEnhanced Defecct)
と呼ばれる浅い凹み状の欠陥が発生する。前記Ni−P
めっき磁気ディスク基板は、アルミニウムサブストレー
トにNi−Pめっきを施した後、加熱処理してめっき処
理による応力を緩和し、さらに研磨するという工程を経
て製造される。研磨は、通常、有機高分子系の研磨布を
貼付した定盤を用い、アルミナ等の砥粒を含む研磨液を
供給しながら行われる。PEDは、最終工程であるこの
研磨仕上げ後に出現する欠陥であり、形状は不定形で深
さが数nm程度である。そして、研磨仕上げ後に欠陥と
して認識されるため、研磨の製品歩留まりを悪化させ生
産効率低下の原因となっている。
For example, PED (Polish Enhanced Defecct) is used for the above-mentioned Ni-P plated magnetic disk substrate.
A shallow dent-shaped defect called a defect occurs. The Ni-P
The plated magnetic disk substrate is manufactured through a step of performing Ni-P plating on an aluminum substrate, followed by heat treatment to relieve stress due to the plating treatment and further polishing. Polishing is usually performed using a surface plate to which an organic polymer polishing cloth is attached, while supplying a polishing liquid containing abrasive grains such as alumina. PED is a defect that appears after this final polishing step, and has an irregular shape and a depth of about several nm. Then, since it is recognized as a defect after polishing finish, it deteriorates the product yield of polishing and causes a decrease in production efficiency.

【0006】PEDの発生には、基板に付着している水
分とその後の加熱条件が関与していると推測される。
It is presumed that the moisture adhering to the substrate and the subsequent heating conditions are involved in the generation of PED.

【0007】[0007]

【発明が解決しようとする課題】一般的なめっき工程で
は、アルミニウム基板に対し、脱脂、エッチング、ジン
ケート処理、Ni−Pめっき、純水洗浄、乾燥、焼鈍の
一連の処理を順次行う。量産工程では、治具で多数の基
板を吊し、自動搬送ロボットによって、脱脂から純水洗
浄までの各処理液槽への浸漬、引き上げ、次処理槽への
搬送を連続して行い、さらに純水洗浄後に乾燥および焼
鈍を行う。このとき、各処理液槽へは治具ごとアルミニ
ウム基板を浸漬するが、治具や基板に処理液が残留した
り、高い液温により蒸発した成分が治具に結露し、結露
水が落下して基板に付着するなどの現象により、処理液
や結露水が基板上に付着する。基板上にこのような水分
が局部的に付着すると、その後の乾燥工程によっても基
板の乾燥状態が一様にならない。このような局部的な付
着水による基板面の不均一性がPEDの発生に関与して
いると推測される。
In a general plating process, a series of treatments such as degreasing, etching, zincate treatment, Ni-P plating, pure water cleaning, drying and annealing are sequentially performed on an aluminum substrate. In the mass production process, a large number of substrates are hung by jigs, and the automatic transfer robot continuously dips and lifts each processing solution tank from degreasing to washing with pure water and transfers it to the next processing tank. After washing with water, drying and annealing are performed. At this time, the aluminum substrate together with the jig is immersed in each treatment liquid tank.However, the treatment liquid remains on the jig or the substrate, or the components evaporated due to the high liquid temperature condense on the jig and the condensed water falls. The processing liquid or dew condensation water adheres to the substrate due to a phenomenon such as adhesion of the substrate to the substrate. If such moisture locally adheres to the substrate, the dried state of the substrate will not be uniform even in the subsequent drying process. It is speculated that the non-uniformity of the substrate surface due to such localized water adhesion is involved in the occurrence of PED.

【0008】このため、現状のめっき量産工程におい
て、付着水の減少および均一化を図りうる洗浄方法が模
索されている。
Therefore, in the current plating mass production process, a cleaning method capable of reducing and making uniform the adhered water is being sought.

【0009】また、めっき後の加熱処理も応力緩和のた
めに不可欠である。通常、加熱は大気中で行われ、15
0℃以下では部分的に水分が付着していてもほとんどP
EDは発生しない。しかし、200℃以上になるとPE
D発生率が上昇し、250℃以上では不均一に水分が付
着しているとほぼ100%発生している。加熱温度は、
爾後の磁性膜スパッタ工程条件により決定されることが
多く、記録密度の高容量化に伴い磁性膜の結晶微細化を
狙って200℃以上の高温に設定する傾向にあって、加
熱温度を低くすることは事実上不可能である。
Further, heat treatment after plating is also essential for stress relaxation. Usually, heating is done in the atmosphere, 15
At 0 ° C or below, almost P
ED does not occur. However, at temperatures above 200 ° C PE
The occurrence rate of D increased, and at 250 ° C. or higher, almost 100% occurred when water was unevenly attached. The heating temperature is
It is often determined by the subsequent magnetic film sputtering process conditions, and tends to be set to a high temperature of 200 ° C. or higher aiming at finer crystal structure of the magnetic film as the recording density is increased, and the heating temperature is lowered. It is virtually impossible.

【0010】この発明は、上述の技術背景に鑑み、現状
のめっき量産工程において、付着水の減少および均一化
を図りうるNi−Pめっき基材の洗浄方法、PEDの発
生が抑制された磁気ディスク基板およびめっき後の加熱
温度の引き下げを行うことなくPEDの発生を抑制しう
る磁気ディスク基板の製造方法の提供を目的とする。
In view of the above technical background, the present invention is a cleaning method for a Ni-P plated base material capable of reducing and uniforming adhered water in the current plating mass production process, and a magnetic disk in which generation of PED is suppressed. An object of the present invention is to provide a method for manufacturing a magnetic disk substrate that can suppress the generation of PED without lowering the heating temperature after the substrate and plating.

【0011】[0011]

【課題を解決するための手段】発明者らは、PEDの発
生過程を解明し、PEDの原因となる付着水そのものを
制御できる洗浄方法を見出し、この発明の完成に至っ
た。
The inventors have clarified the generation process of PED, found a cleaning method capable of controlling the adhered water itself which causes PED, and completed the present invention.

【0012】Ni−Pめっき基材あるいはNi−Pめっ
き基板を用いる磁気ディスク基板において、付着水に起
因するPEDは下記の過程を経て発生する。
In a magnetic disk substrate using a Ni-P plated base material or a Ni-P plated substrate, PED due to the adhered water is generated through the following process.

【0013】めっき直後のNi−Pめっき基材(基板)
は、めっき膜の表面が水酸化膜に覆われている。このよ
うなめっき基材(基板)を大気中で加熱すると、加熱温
度200℃付近から皮膜の酸化が始まり、250℃以上
で顕著に酸化膜が成長する。酸化膜の成長には、加熱雰
囲気中の酸素および水分の他、めっき基材(基板)表面
に付着している水分が影響を及ぼす。めっき基材(基
板)表面に部分的な付着水があると、その水分付着部分
は非付着部分、あるいは付着量の少ない部分よりも厚い
酸化膜が生成する。酸化膜は脆く、加熱後に行われる研
磨によって一気に剥ぎ取られるように除去され、結果的
に酸化膜が厚く成長した水分付着部分が凹みとなり、P
EDが発生する。
Ni-P plated base material (substrate) immediately after plating
The surface of the plating film is covered with the hydroxide film. When such a plating base material (substrate) is heated in the atmosphere, the film starts to oxidize at a heating temperature of around 200 ° C, and an oxide film grows remarkably at 250 ° C or higher. The growth of the oxide film is affected by oxygen and water in the heating atmosphere and water adhering to the surface of the plating base material (substrate). If there is partial adhered water on the surface of the plating base material (substrate), a thicker oxide film is formed at the water adhered portion than at the non-adhered portion or the portion having a small adhered amount. The oxide film is fragile, and is removed so that it is peeled off all at once by the polishing performed after heating. As a result, the water-adhered portion where the oxide film has grown thick becomes a dent, and P
ED occurs.

【0014】従って、Ni−Pめっき基材(基板)に付
着する水分量が少なくかつ均一であれば、加熱しても厚
い酸化膜に成長せず、あるいは生成した酸化膜が均一で
あれば、その後の研磨工程においてPEDの発生を抑制
することができる。
Therefore, if the amount of water adhering to the Ni-P plated base material (substrate) is small and uniform, a thick oxide film does not grow even if heated, or if the generated oxide film is uniform. Generation of PED can be suppressed in the subsequent polishing process.

【0015】即ち、この発明のNi−Pめっき基材の洗
浄方法は、アルミニウムサブストレートにNi−Pめっ
きを施した後に、該めっき基材を洗浄水に浸漬して洗浄
する方法において、前記洗浄水温度(T)を50℃以上
とするとともに、前記洗浄水から前記めっき基材を引き
上げる引き上げ速度(V)を洗浄水温度(T)に応じて
制御することを基本要旨とする。
That is, the cleaning method of the Ni-P plated base material of the present invention is a method of applying Ni-P plating to an aluminum substrate and then immersing the plated base material in cleaning water for cleaning. The basic idea is to set the water temperature (T) to 50 ° C. or higher and to control the pulling rate (V) for pulling up the plating base material from the washing water according to the washing water temperature (T).

【0016】また、この発明の磁気ディスク基板の製造
方法は、アルミニウムサブストレートにNi−Pめっき
を施した後、該めっき基板を洗浄水に浸漬して洗浄し、
その後加熱処理し、さらに研磨する磁気ディスク基板の
製造方法において、前記洗浄工程における洗浄水温度
(T)を50℃以上とするとともに、前記洗浄水から前
記めっき基板を引き上げる引き上げ速度(V)を洗浄水
温度(T)に応じて制御することを基本要旨とする。
Further, in the method for manufacturing a magnetic disk substrate of the present invention, after the aluminum substrate is plated with Ni-P, the plated substrate is immersed in cleaning water for cleaning,
In the method for manufacturing a magnetic disk substrate, which is then heat treated and further polished, the cleaning water temperature (T) in the cleaning step is set to 50 ° C. or higher, and the pulling rate (V) for lifting the plated substrate from the cleaning water is cleaned. The basic gist is to control according to the water temperature (T).

【0017】また、この発明の磁気ディスク基板は、上
述の方法で製造されたことを要旨とする。
The gist of the magnetic disk substrate of the present invention is that it is manufactured by the method described above.

【0018】この発明のNi−Pめっき基材の洗浄方法
においては、Ni−Pめっき後の浸漬洗浄工程で50℃
以上の洗浄水で湯洗するとともに、洗浄水温度(T)に
応じて洗浄水からの引き上げ速度(V)を制御すること
により、付着水量および付着むらを可及的に減少させて
いる。洗浄による付着水量および付着むらが少ないほ
ど、その後の加熱工程における酸化膜の成長が抑制され
るとともに、不可避的に生成される酸化膜の厚みが均一
になる。
In the method for cleaning the Ni-P plated base material of the present invention, the immersion cleaning step after Ni-P plating is performed at 50 ° C.
By washing with hot water as described above and controlling the pulling rate (V) from the wash water according to the wash water temperature (T), the amount of attached water and the unevenness of attachment are reduced as much as possible. The smaller the amount of adhered water and the unevenness of adherence due to the cleaning, the more the growth of the oxide film in the subsequent heating step is suppressed, and the more inevitably the thickness of the oxide film generated becomes uniform.

【0019】洗浄水からの引き上げ速度(V)は、遅い
ほどめっき基材表面からの水切れが良く残留する付着水
量が減少し、付着むらも減少する。また、洗浄水温度
(T)が高いほど水切れが良いため、引き上げ速度
(V)を速くしても付着水量と付着均一性を保つことが
できる。これらの点から、洗浄水温度(T)が高いほ
ど、また引き上げ速度(V)が遅いほど、付着水量およ
び付着むらを減少させることができ、ひいてはPEDの
発生を抑制することができる。
The slower the pulling rate (V) from the cleaning water, the better the water drainage from the surface of the plating base material, and the less the amount of adhered water remaining, and the less the uneven adhesion. Further, the higher the washing water temperature (T) is, the better the water drainage is. Therefore, even if the pulling rate (V) is increased, the amount of adhered water and the adherence uniformity can be maintained. From these points, the higher the cleaning water temperature (T) and the slower the pulling rate (V), the more the amount of adhered water and the unevenness of adherence can be reduced, and the occurrence of PED can be suppressed.

【0020】ただし、引き上げ速度(V)を遅くすれば
処理時間がかかって生産性が悪くなり、洗浄水温度
(T)を高くすればエネルギーコストが高くなる。ま
た、前記洗浄水温度(T)が50℃未満になると、前記
効果が得られる引き上げ速度(V)が遅くなりすぎて生
産性が低下するため、洗浄水温度(T)の下限値を50
℃とする。この発明では、洗浄水温度(T)を50℃以
上とした上で、付着水量および付着むらを効率良く減少
させうる引き上げ速度(V)を洗浄水温度(T)に応じ
て制御している。また、酸化膜の成長を可及的に抑制す
るために、洗浄水には不純物を除去した純水の使用が好
ましい。
However, if the pulling rate (V) is slowed down, it takes a long processing time to deteriorate the productivity, and if the washing water temperature (T) is raised, the energy cost becomes high. Further, if the washing water temperature (T) is lower than 50 ° C., the pulling rate (V) at which the above effect is obtained becomes too slow and productivity is lowered. Therefore, the lower limit of the washing water temperature (T) is set to 50.
℃. In this invention, the cleaning water temperature (T) is set to 50 ° C. or higher, and the pulling rate (V) that can efficiently reduce the amount of adhered water and the uneven adhesion is controlled according to the cleaning water temperature (T). Further, in order to suppress the growth of the oxide film as much as possible, it is preferable to use pure water from which impurities have been removed as the cleaning water.

【0021】即ち、洗浄水温度(T)と引き上げ速度
(V)との関係は、下記の範囲が好ましい。
That is, the relationship between the cleaning water temperature (T) and the pulling rate (V) is preferably in the following range.

【0022】前記洗浄水温度(T)が60℃未満のとき
は前記引き上げ速度(V)を0.015m/sec以下
とし、同じく60℃以上70℃未満のときは0.02m
/sec以下、70℃以上80℃未満のときは0.02
5m/sec以下とし、80℃以上のときは0.05m
/sec以下とする。なお、引き上げ速度(V)が0.
05m/secを超えて速くなると、洗浄水温度(T)
を上げても十分に付着水量を減少させることが困難であ
るため、引き上げ速度(V)の上限値として0.05m
/secを推奨する。
When the washing water temperature (T) is lower than 60 ° C., the pulling rate (V) is 0.015 m / sec or less, and when the temperature is 60 ° C. or higher and lower than 70 ° C., 0.02 m.
/ Sec or less, 0.02 when 70 ° C or higher and lower than 80 ° C
5m / sec or less, 0.05m when the temperature is 80 ° C or higher
/ Sec or less. The pulling rate (V) was 0.
If the speed exceeds 05 m / sec, the temperature of the washing water (T)
Since it is difficult to sufficiently reduce the amount of attached water even if the pressure is raised, the upper limit of the pulling speed (V) is 0.05 m.
/ Sec is recommended.

【0023】また、特に好ましい洗浄水温度(T)と引
き上げ速度(V)との関係は、前記洗浄水温度(T)が
60℃未満のときは前記引き上げ速度(V)は0.01
m/sec以下であり、同じく60℃以上70℃未満の
ときは0.015m/sec、70℃以上80℃未満の
ときは0.02m/sec以下、80℃以上のときは
0.035m/sec以下である。さらに、処理効率を
優先すると、70℃以上の洗浄水を用いて引き上げ速度
(V)を上記範囲内で最大限速くすることが好ましい。
A particularly preferable relationship between the wash water temperature (T) and the pulling rate (V) is that the pulling rate (V) is 0.01 when the wash water temperature (T) is less than 60 ° C.
m / sec or less, also 0.015 m / sec when the temperature is 60 ° C or higher and lower than 70 ° C, 0.02 m / sec or lower when the temperature is 70 ° C or higher and lower than 80 ° C, and 0.035 m / sec when the temperature is 80 ° C or higher. It is the following. Further, if the treatment efficiency is prioritized, it is preferable to maximize the pulling rate (V) within the above range by using washing water at 70 ° C. or higher.

【0024】この発明のNi−Pめっき基材の洗浄方法
において、アルミニウムサブストレートの材質、Ni−
Pめっき方法は限定されず、従来用いられていたものと
同等品、同等の方法や前処理および後処理を適宜用いる
ことができる。
In the method for cleaning a Ni-P plated substrate according to the present invention, the material of the aluminum substrate, Ni-
The P plating method is not limited, and an equivalent product, an equivalent method, pretreatment and posttreatment used conventionally can be appropriately used.

【0025】具体的には、前記アルミニウムサブストレ
ートとして、JIS 5000系のAl−Mg系合金を
推奨でき、特にJIS 5086アルミニウム合金を推
奨できる。前記アルミニウムサブストレートの形状は何
ら限定されず、板、管、棒、ブロック等適宜用いうる。
さらに、これらの材料を研削、洗浄、熱処理することも
任意に行い得る。
Specifically, as the aluminum substrate, a JIS 5000 series Al-Mg type alloy can be recommended, and a JIS 5086 aluminum alloy can be particularly recommended. The shape of the aluminum substrate is not limited at all, and a plate, a tube, a rod, a block or the like may be used as appropriate.
Further, grinding, cleaning, and heat treatment of these materials can be optionally performed.

【0026】また、前記アルミニウムサブストレートに
Ni−Pめっきする際の前処理として、脱脂洗浄、エッ
チング、ジンケート処理を例示できる。さらに、めっき
後の浸漬洗浄後、後処理として乾燥、加熱を例示でき
る。
Examples of pretreatments for plating the aluminum substrate with Ni-P include degreasing cleaning, etching, and zincate treatment. Furthermore, after the immersion cleaning after plating, drying and heating can be exemplified as the post-treatment.

【0027】この発明のNi−Pめっき基材の洗浄方法
は、後述の磁気ディスク基板の製造方法に好適に適用さ
れる他、付着水量や付着むらを減少させる必要のあるあ
らゆるNi−Pめっき基材に適用できる。
The cleaning method of the Ni-P plated base material of the present invention is suitably applied to the magnetic disk substrate manufacturing method described later, and any Ni-P plating group which needs to reduce the amount of adhered water and the adherence unevenness. It can be applied to wood.

【0028】この発明の磁気ディスク基板の製造方法
は、アルミニウムサブストレートに対し、Ni−Pめっ
き、浸漬洗浄、加熱、研磨の一連の処理を実施するに際
し、浸漬洗浄工程として、上述のNi−Pめっき基材の
洗浄方法を適用したものである。従って、めっき後の浸
漬洗浄工程において洗浄水温度(T)に応じてめっき基
板の引き上げ速度(V)を制御することにより、付着水
量および付着むらを可及的に減少させ、その後の加熱工
程における酸化膜の成長を抑制するとともに、不可避的
に生成される酸化膜の厚みを均一なものとし、研磨によ
るPEDの発生を抑制する。
In the method of manufacturing a magnetic disk substrate of the present invention, when the aluminum substrate is subjected to a series of treatments of Ni-P plating, immersion cleaning, heating and polishing, the above-mentioned Ni-P is used as the immersion cleaning step. The method of cleaning the plating base material is applied. Therefore, by controlling the pulling rate (V) of the plated substrate in accordance with the cleaning water temperature (T) in the immersion cleaning step after plating, the amount of adhered water and the unevenness of adhesion can be reduced as much as possible, and in the subsequent heating step. In addition to suppressing the growth of the oxide film, the thickness of the unavoidably generated oxide film is made uniform, and the occurrence of PED due to polishing is suppressed.

【0029】前記磁気ディスク基板の製造方法の浸漬洗
浄工程において、洗浄水温度(T)と洗浄水温度に対応
する基板の引き上げ速度(V)は、上述したNi−Pめ
っき基材の洗浄方法に準じる。また、アルミニウムサブ
ストレートの材質、Ni−Pめっき方法、めきの前処
理、洗浄後の乾燥についても上述したNi−Pめっき基
板材の洗浄方法に準じる。また、アルミニウムサブスト
レートは、材料合金板を適宜研削、洗浄、熱処理した上
で用いることも任意である。
In the immersion cleaning step of the method for manufacturing a magnetic disk substrate, the cleaning water temperature (T) and the substrate withdrawing speed (V) corresponding to the cleaning water temperature are the same as those for the Ni-P plating substrate cleaning method described above. Follow. Also, the material of the aluminum substrate, the Ni-P plating method, the pretreatment of the plating, and the drying after cleaning are in accordance with the cleaning method of the Ni-P plated substrate material described above. Further, the aluminum substrate may be optionally used after the material alloy plate is appropriately ground, washed and heat treated.

【0030】次いで、上述の方法によって浸漬洗浄され
ためっき基板を加熱する。この発明の磁気ディスク基板
の製造方法は、加熱雰囲気や温度を規定するものではな
い。洗浄後の付着水が低減かつ均一化されているため、
大気中で加熱しても酸化膜の成長が抑制されるとともに
不可避的に生成される酸化膜の厚みが均一化し、ひいて
はPEDの発生を抑制することができる。無論、真空ま
た酸素濃度および水分濃度を低減した不活性雰囲気とい
った非酸化雰囲気中での加熱を排除するものではなく、
酸化膜のさらなる成長抑制を図ることもできる。大気中
の加熱であれば、前記非酸化雰囲気加熱よりも加熱設備
を簡略化できる。
Next, the plating substrate that has been immersed and washed by the above method is heated. The method of manufacturing a magnetic disk substrate according to the present invention does not specify the heating atmosphere or temperature. Since the adhered water after cleaning is reduced and uniformed,
Even when heated in the atmosphere, the growth of the oxide film is suppressed, the thickness of the oxide film that is unavoidably generated is made uniform, and the occurrence of PED can be suppressed. Of course, it does not exclude heating in a non-oxidizing atmosphere such as a vacuum or an inert atmosphere in which the oxygen concentration and the water concentration are reduced,
It is also possible to further suppress the growth of the oxide film. If heating is performed in the atmosphere, the heating equipment can be simplified as compared with the non-oxidizing atmosphere heating.

【0031】加熱温度は200〜300℃が好ましい。
200℃以上で加熱することより、爾後に形成される磁
性膜の結晶を微細化させて記録密度の高容量化を図るこ
とができる。一方300℃を超える高温で加熱すると、
前工程でめっきしたNi−Pの結晶化が始まるために、
酸化膜の有無に拘わらず磁気ディスク基板としての適性
を欠くおそれがある。加熱時間も規定されないが、30
〜90分の範囲が好ましい。
The heating temperature is preferably 200 to 300 ° C.
By heating at 200 ° C. or higher, the crystals of the magnetic film to be formed later can be made finer and the recording density can be increased. On the other hand, when heated at a high temperature of over 300 ° C,
Since crystallization of Ni-P plated in the previous step starts,
The suitability as a magnetic disk substrate may be lost regardless of the presence or absence of an oxide film. No heating time is specified, but 30
The range of up to 90 minutes is preferred.

【0032】さらに、加熱処理されたNi−Pめっき基
板を研磨する。研磨は、粗研磨、仕上研磨を適宜行う。
例えば、有機高分子系の研磨布を貼付した定盤を用い、
アルミナ等の砥粒を含む研磨液を供給しながら行う。加
熱処理されたNi−Pめっき基板は酸化膜、特に局部的
に厚い酸化膜が形成されていないため、研磨してもPE
Dが発生せず、研磨によって優れた表面平滑性が得られ
る。
Further, the heat-treated Ni-P plated substrate is polished. As for polishing, rough polishing and finish polishing are appropriately performed.
For example, using a surface plate with an organic polymer-based polishing cloth attached,
It is performed while supplying a polishing liquid containing abrasive grains such as alumina. Since the heat-treated Ni-P plated substrate does not have an oxide film, especially a thick oxide film locally formed, PE film is not removed even if it is polished.
D does not occur, and excellent surface smoothness can be obtained by polishing.

【0033】この発明の方法によって製造された磁気デ
ィスク基板は、要すれば配向性制御膜を形成した後に磁
性膜を形成し、要すればさらに保護膜および潤滑膜を形
成して、磁気ディスクとして用いられる。磁気ディスク
基板はPEDのない表面平滑性の優れたものであるか
ら、高密度記録が可能な磁気ディスクとなし得る。
The magnetic disk substrate manufactured by the method of the present invention is formed as a magnetic disk by forming a magnetic film after forming an orientation control film if necessary, and further forming a protective film and a lubricating film if necessary. Used. Since the magnetic disk substrate has excellent surface smoothness without PED, it can be a magnetic disk capable of high density recording.

【0034】[0034]

【実施例】まず、JIS 5086アルミニウム合金を
材料として、圧延および打ち抜き、表面研削、洗浄およ
び熱処理焼鈍を施して、直径84mm×厚さ0.8mmのア
ルミニウムサブストレートを多数製作した。
Example First, a large number of aluminum substrates having a diameter of 84 mm and a thickness of 0.8 mm were manufactured by using JIS 5086 aluminum alloy as a material, rolling and punching, surface grinding, cleaning and heat treatment annealing.

【0035】前記アルミニウムサブストレートに対し、
常法により脱脂洗浄後エッチングし、さらにジンケート
処理を施した。次いで、次亜りん酸塩を還元剤とした硫
酸ニッケル浴にて、浴温90℃、pH4.5、処理時間
2.0時間の条件でNi−Pめっきした。次いで、表1
の各温度(T)に設定した洗浄水を満たした洗浄槽に浸
漬し、表1の引き上げ速度(V)で洗浄槽から引き上
げ、その後乾燥させた。なお、前記洗浄水として逆浸透
膜装置を通して得た純水(比抵抗:8MΩ・cm)を使
用した。
With respect to the aluminum substrate,
After degreasing and cleaning by a conventional method, etching was performed, and further zincate treatment was performed. Then, Ni-P plating was performed in a nickel sulfate bath using hypophosphite as a reducing agent under the conditions of a bath temperature of 90 ° C., a pH of 4.5, and a treatment time of 2.0 hours. Then, Table 1
Was immersed in a cleaning tank filled with cleaning water set to each temperature (T), was pulled out from the cleaning tank at the pulling rate (V) in Table 1, and was then dried. Pure water (specific resistance: 8 MΩ · cm) obtained through a reverse osmosis membrane device was used as the washing water.

【0036】上述の浸漬洗浄、乾燥させたNi−Pめっ
き基板を、大気中でバッチ式の加熱炉内で250℃×1
時間加熱した。
The above-mentioned immersion-cleaned and dried Ni-P plated substrate was placed in the batch type heating furnace in air at 250 ° C. × 1.
Heated for hours.

【0037】次いで、前記Ni−Pめっき基板を粗研磨
し、洗浄後さらに仕上げ研磨を施して、磁気ディスク基
板を完成させた。
Next, the Ni-P plated substrate was roughly polished, washed, and then further finish-polished to complete a magnetic disk substrate.

【0038】上述の磁気ディスク基板について、光干渉
式形状測定装置(フェーズシフトテクノロジー社:オプ
ティフラット)にてPEDの有無を観察して評価した。
観察は各基板につき10枚の両面で20面に対して行
い、PEDが発生した面の数に基づいて発生率を算出し
て評価した。評価結果を表1に示す。
The above magnetic disk substrate was evaluated by observing the presence or absence of PED with an optical interference type shape measuring device (Optiflat, Phase Shift Technology Co., Ltd.).
The observation was performed on 20 sides of 10 sides of each substrate, and the generation rate was calculated and evaluated based on the number of sides where PED occurred. The evaluation results are shown in Table 1.

【0039】[0039]

【表1】 [Table 1]

【0040】これらの結果から、洗浄水温度(T)およ
び洗浄水からの引き上げ速度(V)を制御することによ
り、PEDが殆ど発生しない磁気ディスク基板を製造し
うることを確認した。
From these results, it was confirmed that by controlling the temperature (T) of the washing water and the pulling rate (V) from the washing water, it is possible to manufacture a magnetic disk substrate in which PED hardly occurs.

【0041】[0041]

【発明の効果】以上説明したように、請求項1のNi−
Pめっき基材の洗浄方法は、アルミニウムサブストレー
トにNi−Pめっきを施した後に、該めっき基材を洗浄
水に浸漬して洗浄する方法において、前記洗浄水温度
(T)を50℃以上とするとともに、前記洗浄水からの
引き上げ速度(V)が洗浄水温度(T)に応じて制御さ
れているから、洗浄水温度に応じて付着水量および付着
むらを効率良く減少させることができる。ひいては、付
着水に起因する酸化膜の成長を抑制できるとともに、不
可避的に生成される酸化膜の厚さのむらを減少させるこ
とができる。
As described above, the Ni-
A method for cleaning a P-plated substrate is a method in which an aluminum substrate is subjected to Ni-P plating, and then the plated substrate is immersed in cleaning water for cleaning, and the cleaning water temperature (T) is 50 ° C. or higher. In addition, since the pulling rate (V) from the cleaning water is controlled according to the cleaning water temperature (T), it is possible to efficiently reduce the amount of adhered water and the uneven adhesion according to the temperature of the cleaning water. As a result, it is possible to suppress the growth of the oxide film due to the adhered water and reduce the uneven thickness of the oxide film that is inevitably generated.

【0042】また、前記洗浄水温度(T)と引き上げ速
度(V)との関係を請求項2の範囲に規定することによ
り、さらに効率良く付着水量および付着むらを減少させ
ることができ、請求項3の範囲に規定することにより、
なお一層効率良く付着水量および付着むらを減少させる
ことができる。
Further, by defining the relationship between the cleaning water temperature (T) and the pulling rate (V) within the range of claim 2, it is possible to more efficiently reduce the amount of adhered water and the unevenness of adherence. By defining in the range of 3,
It is possible to more efficiently reduce the amount of adhered water and the unevenness of adherence.

【0043】さらに、前記アルミニウムサブストレート
にはJIS 5000系アルミニウム合金からなること
が好ましく、Ni−Pめっきの母材として適している。
Further, the aluminum substrate is preferably made of JIS 5000 series aluminum alloy and is suitable as a base material for Ni-P plating.

【0044】請求項5の磁気ディスク基板の製造方法
は、アルミニウムサブストレートにNi−Pめっきを施
した後、該めっき基板の浸漬洗浄工程において、洗浄水
温度(T)を50℃以上とするとともに、前記洗浄水か
らの引き上げ速度(V)が洗浄水温度(T)に応じて制
御されているから、洗浄水温度に応じて付着水量および
付着むらを効率良く減少させることができる。このた
め、洗浄後に行う加熱工程において、付着水に起因する
酸化膜の成長を抑制できるとともに、不可避的に生成さ
れる酸化膜の厚さのむらを減少させることができる。そ
して、加熱後の研磨工程においてPEDの発生を抑制す
ることができ、表面平滑性に優れた磁気ディスク基板を
製造することができる。ひいては、このような磁気ディ
スク基板に磁性膜を形成することによって、高密度記録
が可能な磁気ディスクとなし得る。
According to a fifth aspect of the present invention, in the method of manufacturing a magnetic disk substrate, after the Ni substrate is plated on the aluminum substrate, the washing water temperature (T) is set to 50 ° C. or higher in the immersion washing step of the plated substrate. Since the pulling rate (V) from the cleaning water is controlled according to the cleaning water temperature (T), the amount of adhered water and the uneven adhesion can be efficiently reduced according to the temperature of the cleaning water. Therefore, in the heating process performed after cleaning, it is possible to suppress the growth of the oxide film due to the adhered water and reduce the unevenness of the thickness of the oxide film that is inevitably generated. Then, generation of PED can be suppressed in the polishing step after heating, and a magnetic disk substrate having excellent surface smoothness can be manufactured. Further, by forming a magnetic film on such a magnetic disk substrate, a magnetic disk capable of high density recording can be obtained.

【0045】また、浸漬洗浄工程における洗浄前記洗浄
水温度(T)と引き上げ速度(V)との関係を請求項6
の範囲に規定することにより、さらに効率良く付着水量
および付着むらを減少させることができ、ひいては、表
面平滑性に優れた磁気ディスク基板を効率良く製造する
ことができる。またさらに、請求項7の範囲に規定する
ことにより、なお一層効率良く付着水量および付着むら
を減少させることができ、表面平滑性に優れた磁気ディ
スク基板を効率良く製造することができる。
Further, the relationship between the cleaning water temperature (T) and the pulling rate (V) in the immersion cleaning step is defined by claim 6.
By setting the range to, it is possible to more efficiently reduce the amount of adhered water and the unevenness of adherence, and it is possible to efficiently manufacture a magnetic disk substrate having excellent surface smoothness. Furthermore, by defining the scope of claim 7, it is possible to more efficiently reduce the amount of water adhered and the unevenness of adhesion, and it is possible to efficiently manufacture a magnetic disk substrate having excellent surface smoothness.

【0046】また、アルミニウムサブストレートがJI
S 5000系アルミニウム合金からなる場合は、磁気
ディスク基板として優れた特性を有する。
The aluminum substrate is JI
When made of an S 5000 series aluminum alloy, it has excellent properties as a magnetic disk substrate.

【0047】また、めっき基板の付着水量や付着むらが
低減されているから、前記加熱処理を大気中で行っても
酸化膜の成長が抑制されるとともに不可避的に生成され
る酸化膜の厚みが均一化され、ひいてはPEDの発生を
抑制することができる。また、大気中での加熱であるか
ら、加熱設備は簡略なもので済む。
Further, since the amount of water adhered to the plated substrate and the unevenness of the adhesion are reduced, the growth of the oxide film is suppressed and the thickness of the oxide film unavoidably generated is reduced even if the heat treatment is performed in the atmosphere. It can be made uniform, and eventually the occurrence of PED can be suppressed. Further, since the heating is performed in the atmosphere, the heating equipment can be simple.

【0048】また、前記加熱処理を200〜300℃で
行う場合は、爾後に形成される磁性膜の結晶を微細化さ
せて記録密度の高容量化を図ることができる。
When the heat treatment is carried out at 200 to 300 ° C., the crystal of the magnetic film formed thereafter can be made finer to increase the recording density and the capacity.

【0049】また、これらの磁気ディスク基板の製造方
法は、めっき後の浸漬洗浄工程における洗浄水温度およ
び引き上げ温度を制御するだけであるから、めっき方法
の変更や爾後の磁性膜形成条件に拘束される加熱温度の
引き下げを伴わずにPEDの発生を抑制しうる。
In addition, since these magnetic disk substrate manufacturing methods only control the cleaning water temperature and the pulling temperature in the immersion cleaning step after plating, they are restricted by changes in the plating method and magnetic film forming conditions after the plating. The generation of PED can be suppressed without lowering the heating temperature.

【0050】上述の方法で製造された磁気ディスク基板
は、PEDの発生が抑制されて表面平滑性の優れた磁気
ディスク基板であり、この磁気ディスク基板に磁性膜を
形成することによって、高密度記録が可能な磁気ディス
クとなし得る。
The magnetic disk substrate manufactured by the above-mentioned method is a magnetic disk substrate which is suppressed in PED generation and has excellent surface smoothness. By forming a magnetic film on this magnetic disk substrate, high density recording is achieved. It can be used as a magnetic disk.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 多田 清志 栃木県小山市犬塚1丁目480番地 昭和電 工株式会社小山事業所内 (72)発明者 畑山 博史 栃木県小山市犬塚1丁目480番地 昭和電 工株式会社小山事業所内 Fターム(参考) 3B201 AA03 AB08 BB02 BB82 BB93 CC11 4K022 AA02 AA31 AA44 BA14 BA16 DA01 EA02 5D006 EA04 5D112 AA03 BD06 GA08    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kiyoshi Tada             Showaden 1-480 Inuzuka, Oyama City, Tochigi Prefecture             Koyama Works Co., Ltd. (72) Inventor Hiroshi Hatayama             Showaden 1-480 Inuzuka, Oyama City, Tochigi Prefecture             Koyama Works Co., Ltd. F-term (reference) 3B201 AA03 AB08 BB02 BB82 BB93                       CC11                 4K022 AA02 AA31 AA44 BA14 BA16                       DA01 EA02                 5D006 EA04                 5D112 AA03 BD06 GA08

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】 アルミニウムサブストレートにNi−P
めっきを施した後に、該めっき基材を洗浄水に浸漬して
洗浄する方法において、 前記洗浄水温度(T)を50℃以上とするとともに、前
記洗浄水から前記めっき基材を引き上げる引き上げ速度
(V)を洗浄水温度(T)に応じて制御することを特徴
とするNi−Pめっき基材の洗浄方法。
1. An Ni substrate on an aluminum substrate.
In a method of immersing the plating base material in cleaning water after performing plating, the cleaning water temperature (T) is set to 50 ° C. or higher, and a pulling rate for pulling up the plating base material from the cleaning water ( A method for cleaning a Ni-P plated substrate, characterized in that V) is controlled according to the temperature (T) of the cleaning water.
【請求項2】 前記洗浄水温度(T)が60℃未満のと
き、前記引き上げ速度(V)を0.015m/sec以
下とし、 前記洗浄水温度(T)が60℃以上70℃未満のとき、
前記引き上げ速度(V)を0.02m/sec以下と
し、 前記洗浄水温度(T)が70℃以上80℃未満のとき、
前記引き上げ速度(V)を0.025m/sec以下と
し、 前記洗浄水温度(T)が80℃以上のとき、前記引き上
げ速度(V)を0.05m/sec以下とする請求項1
に記載のNi−Pめっき基材の洗浄方法。
2. When the cleaning water temperature (T) is less than 60 ° C., the pulling rate (V) is 0.015 m / sec or less, and when the cleaning water temperature (T) is 60 ° C. or more and less than 70 ° C. ,
When the pulling rate (V) is 0.02 m / sec or less and the cleaning water temperature (T) is 70 ° C. or higher and lower than 80 ° C.,
The pulling rate (V) is 0.025 m / sec or less, and the pulling rate (V) is 0.05 m / sec or less when the cleaning water temperature (T) is 80 ° C. or higher.
The method for cleaning a Ni-P plated base material according to 1.
【請求項3】 前記洗浄水温度(T)が60℃未満のと
き、前記引き上げ速度(V)を0.01m/sec以下
とし、 前記洗浄水温度(T)が60℃以上70℃未満のとき、
前記引き上げ速度(V)を0.015m/sec以下と
し、 前記洗浄水温度(T)が70℃以上80℃未満のとき、
前記引き上げ速度(V)を0.02m/sec以下と
し、 前記洗浄水温度(T)が80℃以上のとき、前記引き上
げ速度(V)を0.035m/sec以下とする請求項
1に記載のNi−Pめっき基材の洗浄方法。
3. When the cleaning water temperature (T) is less than 60 ° C., the pulling rate (V) is 0.01 m / sec or less, and when the cleaning water temperature (T) is 60 ° C. or more and less than 70 ° C. ,
When the pulling rate (V) is 0.015 m / sec or less and the cleaning water temperature (T) is 70 ° C. or higher and lower than 80 ° C.,
The pulling rate (V) is 0.02 m / sec or less, and the pulling rate (V) is 0.035 m / sec or less when the cleaning water temperature (T) is 80 ° C. or higher. A method for cleaning a Ni-P plated substrate.
【請求項4】 前記アルミニウムサブストレートは、J
IS 5000系アルミニウム合金からなる請求項1〜
3のいずれかに記載のNi−Pめっき基材の洗浄方法。
4. The aluminum substrate is J
An IS 5000 series aluminum alloy.
4. The method for cleaning a Ni-P plated substrate according to any one of 3 above.
【請求項5】 アルミニウムサブストレートにNi−P
めっきを施した後、該めっき基板を洗浄水に浸漬して洗
浄し、その後加熱処理し、さらに研磨する磁気ディスク
基板の製造方法において、 前記洗浄工程における洗浄水温度(T)を50℃以上と
するとともに、前記洗浄水から前記めっき基板を引き上
げる引き上げ速度(V)を洗浄水温度(T)に応じて制
御することを特徴とする磁気ディスク基板の製造方法。
5. Ni-P on an aluminum substrate
In the method for producing a magnetic disk substrate, in which the plated substrate is immersed in cleaning water for cleaning after plating, then heat-treated, and further polished, the cleaning water temperature (T) in the cleaning step is set to 50 ° C. or higher. In addition, the method for producing a magnetic disk substrate is characterized in that the pulling rate (V) of pulling up the plated substrate from the washing water is controlled according to the washing water temperature (T).
【請求項6】 前記洗浄水温度(T)が60℃未満のと
き、前記引き上げ速度(V)を0.015m/sec以
下とし、 前記洗浄水温度(T)が60℃以上70℃未満のとき、
前記引き上げ速度(V)を0.02m/sec以下と
し、 前記洗浄水温度(T)が70℃以上80℃未満のとき、
前記引き上げ速度(V)を0.025m/sec以下と
し、 前記洗浄水温度(T)が80℃以上のとき、前記引き上
げ速度(V)を0.05m/sec以下とする請求項5
に記載の磁気ディスク基板の製造方法。
6. When the cleaning water temperature (T) is less than 60 ° C., the pulling rate (V) is 0.015 m / sec or less, and when the cleaning water temperature (T) is 60 ° C. or more and less than 70 ° C. ,
When the pulling rate (V) is 0.02 m / sec or less and the cleaning water temperature (T) is 70 ° C. or higher and lower than 80 ° C.,
The pulling rate (V) is 0.025 m / sec or less, and the pulling rate (V) is 0.05 m / sec or less when the cleaning water temperature (T) is 80 ° C. or higher.
A method of manufacturing a magnetic disk substrate according to.
【請求項7】 前記洗浄水温度(T)が60℃未満のと
き、前記引き上げ速度(V)を0.01m/sec以下
とし、 前記洗浄水温度(T)が60℃以上70℃未満のとき、
前記引き上げ速度(V)を0.015m/sec以下と
し、 前記洗浄水温度(T)が70℃以上80℃未満のとき、
前記引き上げ速度(V)を0.02m/sec以下と
し、 前記洗浄水温度(T)が80℃以上のとき、前記引き上
げ速度(V)を0.035m/sec以下とする請求項
5に記載の磁気ディスク基板の製造方法。
7. When the cleaning water temperature (T) is less than 60 ° C., the pulling rate (V) is 0.01 m / sec or less, and when the cleaning water temperature (T) is 60 ° C. or more and less than 70 ° C. ,
When the pulling rate (V) is 0.015 m / sec or less and the cleaning water temperature (T) is 70 ° C. or higher and lower than 80 ° C.,
The pulling rate (V) is 0.02 m / sec or less, and the pulling rate (V) is 0.035 m / sec or less when the cleaning water temperature (T) is 80 ° C. or higher. Manufacturing method of magnetic disk substrate.
【請求項8】 前記アルミニウムサブストレートは、J
IS 5000系アルミニウム合金からなる請求項5〜
7のいずれかに記載の磁気ディスク基板の製造方法。
8. The aluminum substrate is J
6. An IS 5000 series aluminum alloy.
7. The method for manufacturing a magnetic disk substrate according to any one of 7.
【請求項9】 前記加熱処理は、大気中で行う請求項5
〜8のいずれかに記載の磁気ディスク基板の製造方法。
9. The heat treatment is performed in the atmosphere.
9. A method of manufacturing a magnetic disk substrate according to any one of items 8 to 8.
【請求項10】 前記加熱処理は、200〜300℃で
行う請求項5〜9のいずれか記載の磁気ディスク基板の
製造方法。
10. The method for manufacturing a magnetic disk substrate according to claim 5, wherein the heat treatment is performed at 200 to 300 ° C.
【請求項11】 請求項5〜10に記載されたいずれか
の方法で製造されたことを特徴とする磁気ディスク基
板。
11. A magnetic disk substrate manufactured by the method according to any one of claims 5 to 10.
JP2001234795A 2001-08-02 2001-08-02 CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE Pending JP2003041377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001234795A JP2003041377A (en) 2001-08-02 2001-08-02 CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001234795A JP2003041377A (en) 2001-08-02 2001-08-02 CLEANING METHOD FOR Ni-P PLATED SUBSTRATE, MANUFACTURING METHOD FOR MAGNETIC DISK SUBSTRATE, AND MAGNETIC DISK SUBSTRATE

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Publication Number Publication Date
JP2003041377A true JP2003041377A (en) 2003-02-13

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270399A (en) * 1985-05-23 1986-11-29 Seiko Epson Corp Method for removing water after washing
JPS61288078A (en) * 1985-06-14 1986-12-18 Sony Corp Plating method
JPH0665748A (en) * 1992-08-25 1994-03-08 Dainippon Printing Co Ltd Electroless plating device
JPH06111298A (en) * 1992-10-01 1994-04-22 Mitsubishi Alum Co Ltd Disk board and manufacture thereof
JPH06212440A (en) * 1992-11-30 1994-08-02 Mitsubishi Kasei Corp Method for electroless plating on nonconductive base
JPH1110492A (en) * 1997-06-17 1999-01-19 Showa Alum Corp Magnetic disc substrate and manufacture thereof
JPH1176959A (en) * 1997-09-04 1999-03-23 Olympus Optical Co Ltd Finish cleaning
JPH11140577A (en) * 1997-11-10 1999-05-25 Nippon Light Metal Co Ltd Aluminum alloy substrate for magnetic disc
JPH11167714A (en) * 1997-12-03 1999-06-22 Showa Alum Corp Production of magnetic disk substrate
JP2000017446A (en) * 1998-07-07 2000-01-18 Nippon Light Metal Co Ltd Racking device and unracking device
JP2000173050A (en) * 1998-12-04 2000-06-23 Toyo Kohan Co Ltd Magnetic recording medium and its fabricating method

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270399A (en) * 1985-05-23 1986-11-29 Seiko Epson Corp Method for removing water after washing
JPS61288078A (en) * 1985-06-14 1986-12-18 Sony Corp Plating method
JPH0665748A (en) * 1992-08-25 1994-03-08 Dainippon Printing Co Ltd Electroless plating device
JPH06111298A (en) * 1992-10-01 1994-04-22 Mitsubishi Alum Co Ltd Disk board and manufacture thereof
JPH06212440A (en) * 1992-11-30 1994-08-02 Mitsubishi Kasei Corp Method for electroless plating on nonconductive base
JPH1110492A (en) * 1997-06-17 1999-01-19 Showa Alum Corp Magnetic disc substrate and manufacture thereof
JPH1176959A (en) * 1997-09-04 1999-03-23 Olympus Optical Co Ltd Finish cleaning
JPH11140577A (en) * 1997-11-10 1999-05-25 Nippon Light Metal Co Ltd Aluminum alloy substrate for magnetic disc
JPH11167714A (en) * 1997-12-03 1999-06-22 Showa Alum Corp Production of magnetic disk substrate
JP2000017446A (en) * 1998-07-07 2000-01-18 Nippon Light Metal Co Ltd Racking device and unracking device
JP2000173050A (en) * 1998-12-04 2000-06-23 Toyo Kohan Co Ltd Magnetic recording medium and its fabricating method

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