JP2003023136A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that an electrode for inputting and outputting data directly between a memory chip and a microcomputer chip in a semiconductor device is connected with an external terminal protruding outside the semiconductor device, so that a protective circuit of the electrode which is formed in each semiconductor chip turns to superfluous capacitance and resistance when high speed data are inputted and outputted between semiconductor chips, and deteriorates performance of the semiconductor device. SOLUTION: Thin metal wires 19, 20 connected with electrodes 23 for inputting and outputting data between the memory chip 14 and the microcomputer chip 15 are connected with a common lead 24, which is cut inside sealing resin 29 and isolated from an outer terminal 25. The common lead 24 and other lead 21 are bridged by insulating material 26, and the common lead 24 is in a floating state.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device on which a plurality of semiconductor chips are mounted, and in particular,
The present invention relates to a semiconductor device that protects against static electricity in the external world, which is a problem when data is input / output between semiconductor chips.

[0002]

2. Description of the Related Art In recent years, in home electric appliances, portable information terminals, etc., the downsizing and performance of the equipment have been advanced. In response to this, a semiconductor device has a plurality of semiconductor chips having different functions mounted on one semiconductor device to reduce the number of parts, and the semiconductor chips directly input and output data in the semiconductor device. The importance of "system-in-package technology" for building high-performance systems is increasing.

FIG. 2 is a diagram showing a conventional semiconductor device.

As shown in FIGS. 2A and 2B, the memory chip 1 and the microcomputer chip 2 are mounted on one semiconductor device. The memory chip 1 and the microcomputer chip 2 have a lead frame 3 for mounting the semiconductor device on the back surface of the chip.
The metal wires 6, 7 are connected to the electrodes 5 of the memory chip 1 and the microcomputer chip 2, respectively. Each metal wire is a lead frame 3
Connected to individual leads 8 of. The tips of the leads 8 serve as external terminals 9 that are exposed to the outside of the semiconductor device.

On the other hand, when data is directly input / output between the memory chip 1 and the microcomputer chip 2 in the semiconductor device,
A data input / output electrode 10 is formed on each semiconductor chip, and each data input / output electrode 10 has a common lead 11
Electrically connected via. The common lead 11 and the input / output electrodes 10 of each semiconductor chip are connected via metal wires 6 and 7, respectively, and the memory chip 1 and the microcomputer chip 2 are electrically connected via the common lead 11.
Here, the memory chip 1, the microcomputer chip 2, the electrodes 5 and the input / output electrodes 10 of the respective semiconductor chips are provided with a protection circuit 12 for preventing destruction due to external static electricity. In this state, the memory chip 1, the microcomputer chip 2, the thin metal wires 6 and 7, and the lead frame 3 are the sealing resin 1.
It is sealed with 3.

[0006]

In the conventional semiconductor device, in order to prevent damage due to static electricity received from the outside, a protection circuit composed of a diode, a resistor or the like is provided in the electrode portion in the semiconductor chip. The static electricity received from the outside world cannot be controlled after the semiconductor chip is sealed in the semiconductor device, mounted, and sold, and then incorporated into the device.Therefore, the protection circuit must have sufficient margin for durability against electrostatic energy. Designed. The higher the electrostatic energy absorbed by the protection circuit, the larger the diode and resistance, and the larger the scale.

Further, according to the conventional method, the electrode for directly inputting / outputting data between the memory chip and the microcomputer chip in the semiconductor device is connected to the external terminal protruding to the outside of the semiconductor device. It requires a protection circuit of the same scale as the electrode protection circuit. This protection circuit has a problem that it becomes an extra capacity or resistance when inputting / outputting data at high speed between semiconductor chips, and deteriorates the total performance of the semiconductor device.

The present invention solves the above-mentioned conventional problems by reducing the size of a protection circuit required when data is input and output between a plurality of semiconductor chips, and by inputting high-performance data. A semiconductor device that realizes output is realized.

[0009]

In order to solve the problems of the conventional semiconductor device, a semiconductor device of the present invention is a semiconductor device in which a plurality of semiconductor chips are sealed with a sealing resin. Electrodes for inputting / outputting data between elements are formed on each of the plurality of semiconductor chips, the thin metal wires connected to each of the electrodes are connected to a common lead, and the common lead is cut to It is separated from the external terminals protruding to the outer surface of the sealing resin.

The common lead cut and separated from the external terminal is cross-linked with the lead excluding the common lead by an insulating material.

Further, the size of the electrode protection circuit formed on each of the plurality of semiconductor elements for inputting and outputting data to and from each other is the same as the size of the electrode protection circuit excluding the electrodes for inputting and outputting the data. Smaller than.

The plurality of semiconductor elements are a first semiconductor element and a second semiconductor element, the first semiconductor chip is adhered to the front surface of the die pad, and the second semiconductor chip is attached to the rear surface of the die pad. It is glued.

Therefore, according to the present invention, the common lead connected to the thin metal wire connected to the electrode for inputting / outputting data between the semiconductor chips is cut inside the sealing resin, and the external terminal protrudes from the outer surface of the sealing resin. The common lead separated and cut from is cross-linked with another lead by an insulating material in the resin-sealed semiconductor device and fixed in a floating state. Further, in the semiconductor device, the electrode protection circuit that directly inputs and outputs data between semiconductor chips is an electrode provided for each chip to connect to the substrate of the device outside the semiconductor device, that is, between the chips. The size is smaller than the size of the electrode protection circuit that does not directly input / output data (including the case where the protection circuit is omitted altogether).

Therefore, the electrodes for directly inputting / outputting data between the semiconductor chips are less likely to be affected by static electricity from the outside after being sealed and mounted in the semiconductor device. In addition,
Since the static electricity received during the sealing and mounting of the semiconductor device can be sufficiently managed within the semiconductor manufacturer, the durability against electrostatic energy can be greatly reduced.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a semiconductor device of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a semiconductor device of this embodiment.

As shown in FIGS. 1A and 1B, in the semiconductor device of this embodiment, when the memory chip 14 and the microcomputer chip 15 are mounted in one semiconductor device, the semiconductor chip is stored in the memory chip 14. The microcomputer chip 15 performs a control process of the device by using the data, and has a function of storing the data input by the user who uses the device in the memory chip 14 through the microcomputer chip 15.

Memory chip 14 and microcomputer chip 15
Is attached to the die pad 17 of the lead frame 16 for mounting the package, and the respective electrodes 18 of the memory chip 14 and the microcomputer chip 15 are attached.
The thin metal wires 19 and 20 are connected to. Each thin metal wire 19, 20 is connected to an individual lead 21 of the lead frame 16. The tips of the leads 21 become the external terminals 22 protruding from the outer surface of the sealing resin of the semiconductor device.
When connecting to the board of the device outside the semiconductor device, each external terminal 22 is connected to the board of the device.

On the other hand, in the case of directly inputting / outputting data between the memory chip 14 and the microcomputer chip 15 in the semiconductor device, the metal thin wires 19, which are connected to the electrodes 23 for inputting / outputting data between the semiconductor chips, Reference numeral 20 is connected to a common lead 24, and data is mutually input and output between the memory chip 14 and the microcomputer chip 15 via the common lead 24.

The characteristic configuration of this embodiment is that the common lead 24 for inputting / outputting data between semiconductor chips is cut and separated from the external terminal 25. That is, the common lead 24 is cut inside the sealing resin and separated from the external terminals 25 protruding from the outer surface of the sealing resin of the semiconductor device. In this way, even if the common lead 24 is cut, there is no problem because it is not necessary to electrically connect to the outside.

The common leads 24 are the leads 21 excluding the common leads 24 for inputting / outputting data between semiconductor chips.
And is fixed in a floating state by being crosslinked with an insulating material 26 such as polyimide, and the influence of static electricity can be reduced.

With this structure, the influence of static electricity received from the outside of the semiconductor device is reduced. Electrodes 18 of memory chip 14 and microcomputer chip 15 respectively
Is provided with a protection circuit 27 for preventing damage due to static electricity received from the outside, the size of the protection circuit 28 for the data input / output electrodes 23 between semiconductor chips in the semiconductor device is as follows. The size is smaller than that of the electrode protection circuit 27 that does not input / output data between semiconductor chips. In this state, the memory chip 14, the microcomputer chip 15, the thin metal wires 19 and 20, the lead frame 1
6 is sealed with a sealing resin 29.

As described above, in the semiconductor device of this embodiment, the electrodes for inputting / outputting data between a plurality of semiconductor chips are electrically connected to the common lead via the thin metal wire.
Since the common lead is cut inside the encapsulation resin and separated from the external terminals protruding from the outer surface of the encapsulation resin, the influence of external static electricity can be suppressed, and data can be input and output mutually. The size of the protection circuit for the electrode can be reduced. Further, since the scale of the electrode protection circuit for inputting / outputting data between the semiconductor chips is reduced, the electric capacity and the resistance value are reduced, and a high-performance semiconductor device can be realized.

[0024]

According to the semiconductor device of the present invention, a thin metal wire connected to an electrode for inputting / outputting data between a plurality of semiconductor chips is connected to a common lead, and the common lead is cut in a sealing resin. Therefore, after the semiconductor chip is sealed and mounted in a semiconductor device, static electricity is not received from the external environment when the semiconductor device is incorporated into a device, and high-speed data input / output between semiconductor chips is prevented. The scale of the protection circuit can be reduced, and the total performance of the semiconductor device can be improved. Therefore, a high-performance semiconductor device can be realized without significantly increasing the number of steps and increasing the cost.

[Brief description of drawings]

FIG. 1 is a diagram showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a conventional semiconductor device.

[Explanation of symbols]

1 memory chip 2 Microcomputer chip 3 lead frame 4 die pad 5 electrodes 6 Thin metal wire of memory chip 7 Micro wire of microcomputer chip 8 leads 9 External terminal 10 Input / output electrodes 11 common lead 12 Protection circuit 13 Sealing resin 14 memory chips 15 Microcomputer chip 16 lead frame 17 die pad 18 electrodes 19 thin metal wires 20 thin metal wires 21 lead 22 External terminal 23 electrodes 24 common leads 25 external terminals 26 Insulating material 27 Protection circuit 28 Protection circuit 29 Sealing resin

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Motoaki Sato             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd.

Claims (4)

[Claims] 1. A semiconductor device in which a plurality of semiconductor chips are sealed with a sealing resin, wherein electrodes for mutually inputting and outputting data between the semiconductor elements are formed in each of the plurality of semiconductor chips. The thin metal wire connected to each of the electrodes is connected to a common lead, and the common lead is cut and separated from an external terminal protruding to an outer surface of the sealing resin. 2. The semiconductor device according to claim 1, wherein the common lead that is cut and separated from the external terminal is bridged with a lead other than the common lead by an insulating material. 3. The size of an electrode protection circuit formed on each of a plurality of semiconductor elements for inputting and outputting data to and from each other is the same as the size of the electrode protection circuit excluding the electrodes for inputting and outputting the data. The semiconductor device according to claim 1, which is smaller than the above. 4. The plurality of semiconductor elements are a first semiconductor element and a second semiconductor element, the first semiconductor chip is adhered to a front surface of a die pad, and the second semiconductor chip is attached to a rear surface of the die pad. The semiconductor device according to claim 1, wherein the semiconductor device is bonded.