JP2003017756A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP2003017756A JP2003017756A JP2001195960A JP2001195960A JP2003017756A JP 2003017756 A JP2003017756 A JP 2003017756A JP 2001195960 A JP2001195960 A JP 2001195960A JP 2001195960 A JP2001195960 A JP 2001195960A JP 2003017756 A JP2003017756 A JP 2003017756A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- refractive index
- attachment
- light
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光素子が高屈折
率のアタッチメントに覆われてなる発光ダイオード（以
下、「ＬＥＤ」とも略する。）に関するものである。な
お、本明細書中ではＬＥＤチップそのものは「発光素
子」と呼び、ＬＥＤチップを搭載したパッケージ樹脂ま
たはレンズ系等の光学装置を含む発光装置全体を「発光
ダイオード」または「ＬＥＤ」と呼ぶこととする。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode (hereinafter abbreviated as "LED") in which a light emitting element is covered with an attachment having a high refractive index. In the present specification, the LED chip itself is referred to as a “light emitting element”, and the entire light emitting device including an optical device such as a package resin or a lens system on which the LED chip is mounted is referred to as a “light emitting diode” or “LED”. To do.
【０００２】[0002]
【従来の技術】一般に、発光素子は透明エポキシ樹脂
（屈折率ｎ＝１．５）によって封止されている。このよ
うに樹脂封止することによって、空気中に直接取り出す
場合に比べて、発光素子の結晶からの光取り出し効率を
約２倍にすることができる。かかる従来の発光ダイオー
ドの一例について、図３を参照して説明する。図３は従
来の発光ダイオードの構成を示す縦断面図である。2. Description of the Related Art Generally, a light emitting device is sealed with a transparent epoxy resin (refractive index n = 1.5). By resin-sealing in this way, the light extraction efficiency from the crystal of the light emitting element can be approximately doubled as compared with the case of directly extracting in air. An example of such a conventional light emitting diode will be described with reference to FIG. FIG. 3 is a vertical sectional view showing the structure of a conventional light emitting diode.
【０００３】図３に示されるように、この発光ダイオー
ド２１においては、ＧａＮ系の発光素子２２に電力を供
給する１対のリード２３ａ，２３ｂのうち一方のリード
２３ａの上に発光素子２２がマウントされており、発光
素子２２の上面には両方の電極が形成されている。これ
らの電極は、ワイヤ２４ａ，２４ｂによって１対のリー
ド２３ａ，２３ｂにそれぞれボンディングされて電気的
接続がとられている。これらの発光素子２２、ワイヤ２
４ａ，２４ｂ及び１対のリード２３ａ，２３ｂの先端部
分が、屈折率ｎ＝１．５の透明エポキシ樹脂２５によっ
て封止されるとともに光放射面２６が形成されている。
このように発光素子２２が透明エポキシ樹脂２５で封止
されることによって、光取り出し効率は空気中に直接取
り出す場合の約２倍になる。As shown in FIG. 3, in the light emitting diode 21, the light emitting element 22 is mounted on one of the pair of leads 23a and 23b for supplying electric power to the GaN-based light emitting element 22. Both electrodes are formed on the upper surface of the light emitting element 22. These electrodes are electrically connected to the pair of leads 23a and 23b by wires 24a and 24b, respectively. These light emitting elements 22 and wires 2
4a, 24b and the tip portions of the pair of leads 23a, 23b are sealed with a transparent epoxy resin 25 having a refractive index n = 1.5 and a light emitting surface 26 is formed.
By thus sealing the light emitting element 22 with the transparent epoxy resin 25, the light extraction efficiency is about twice that in the case of direct extraction into the air.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これで
もまだ発光素子２２の結晶中に残存して熱に変換される
光の割合は依然大きい。しかし、封止に適した材料には
硬化前の流動性、充填性、硬化後の透明性、強度等の条
件があり、透明エポキシ樹脂２５以上の高屈折率でかか
る条件を満たす材料は今のところなく、樹脂封止によっ
てこれ以上の光取り出し効率の向上を図ることは困難で
ある。However, even with this, the proportion of the light remaining in the crystal of the light emitting element 22 and converted into heat is still large. However, materials suitable for encapsulation have conditions such as fluidity before curing, filling properties, transparency after curing, strength, etc., and materials that satisfy such conditions with a high refractive index of transparent epoxy resin 25 or higher are currently available. However, it is difficult to further improve the light extraction efficiency by resin sealing.
【０００５】そこで、本発明は、発光素子を樹脂封止す
る代わりに高屈折率の光学的アタッチメントを接続する
ことによって発光素子からの光取り出し効率を向上させ
ることができる発光ダイオードを提供することを課題と
するものである。Therefore, the present invention provides a light emitting diode capable of improving the light extraction efficiency from the light emitting element by connecting an optical attachment having a high refractive index instead of sealing the light emitting element with resin. This is an issue.
【０００６】[0006]
【課題を解決するための手段】請求項１の発明にかかる
発光ダイオードは、発光素子と、屈折率１．７以上でか
つ前記発光素子と同等以下の範囲の屈折率を有する材料
からなるアタッチメントとを備え、前記アタッチメント
と前記発光素子の発光面とは、屈折率１．７以上でかつ
前記発光素子と同等以下の範囲の屈折率材料からなる光
学的接合手段により光学的に接合されているものであ
る。A light emitting diode according to the invention of claim 1 comprises a light emitting element and an attachment made of a material having a refractive index in the range of 1.7 or more and equal to or less than the light emitting element. Wherein the attachment and the light emitting surface of the light emitting element are optically joined by an optical joining means made of a refractive index material having a refractive index of 1.7 or more and equal to or less than the light emitting element. Is.
【０００７】かかる構成のＬＥＤにおいては、発光素子
の光は発光面に接合された屈折率１．７以上でかつ発光
素子と同等以下の範囲の屈折率材料からなる光学的接合
手段によって高い光取り出し効率で取り出され、さらに
屈折率１．７以上でかつ発光素子と同等以下の範囲の屈
折率を有する材料からなるアタッチメントによって高い
光取り出し効率で取り出されて、アタッチメントの表面
から外部へ放射される。これによって、発光素子から外
部へ取り出される光取り出し効率は、発光素子を透明エ
ポキシ樹脂で封止した場合に比べて著しく向上する。In the LED having such a structure, the light of the light emitting element is highly extracted by the optical joining means made of the refractive index material bonded to the light emitting surface in the range of the refractive index of 1.7 or more and the range of the light emitting element or less. It is efficiently extracted, and further, it is extracted with high light extraction efficiency by an attachment made of a material having a refractive index of 1.7 or more and a refractive index in the range equal to or less than that of the light emitting element, and radiated to the outside from the surface of the attachment. As a result, the efficiency of extracting light from the light emitting element to the outside is significantly improved as compared with the case where the light emitting element is sealed with a transparent epoxy resin.
【０００８】このようにして、発光素子を樹脂封止する
代わりに高屈折率の光学的アタッチメントを接合するこ
とによって発光素子からの光取り出し効率を向上させる
ことができる発光ダイオードとなる。In this way, a light emitting diode can be obtained in which the light extraction efficiency from the light emitting element can be improved by joining an optical attachment having a high refractive index instead of sealing the light emitting element with resin.
【０００９】請求項２の発明にかかる発光ダイオード
は、高屈折率材料で形成された発光素子と、屈折率１．
７以上でかつ前記発光素子と同等以下の範囲の屈折率を
有する高範囲屈折率材料からなるアタッチメントとを備
え、前記アタッチメントと前記発光素子の発光面とは直
接融着されているものである。A light emitting diode according to a second aspect of the present invention includes a light emitting element formed of a high refractive index material and a refractive index of 1.
An attachment made of a high range refractive index material having a refractive index of 7 or more and equal to or less than that of the light emitting element is provided, and the attachment and the light emitting surface of the light emitting element are directly fused.
【００１０】アタッチメントを構成する高屈折材料によ
っては、融点が低くて発光素子の発光面に直接融着する
ことができるものがある。この場合には、間に光学的接
合手段を挟む必要がないので構成が簡単になるととも
に、界面が１つになるので発光素子からアタッチメント
への光取り出し効率がより向上する。Some high refractive materials forming the attachment have a low melting point and can be directly fused to the light emitting surface of the light emitting element. In this case, since it is not necessary to sandwich an optical joining means between them, the structure is simplified, and since there is one interface, the light extraction efficiency from the light emitting element to the attachment is further improved.
【００１１】このようにして、発光素子を樹脂封止する
代わりに高屈折率の光学的アタッチメントを直接接合す
ることによって発光素子からの光取り出し効率をより向
上させることができる発光ダイオードとなる。In this way, a light emitting diode can be obtained in which the light extraction efficiency from the light emitting element can be further improved by directly joining a high refractive index optical attachment instead of sealing the light emitting element with resin.
【００１２】請求項３の発明にかかる発光ダイオード
は、請求項１または請求項２の構成において、前記発光
素子は底面に両方の電極を備えているものである。A light emitting diode according to a third aspect of the present invention is the light emitting diode according to the first or second aspect, wherein the light emitting element has both electrodes on a bottom surface.
【００１３】かかる構成のＬＥＤにおいては、発光面側
に電極がないのでアタッチメントの取り付けが容易にな
り、またアタッチメントに接続される発光面の面積も増
える。これによって、発光素子からの光取り出し効率を
さらに向上させることができるとともに、アタッチメン
トの取り付けが容易な発光ダイオードとなる。In the LED having such a structure, since there is no electrode on the light emitting surface side, the attachment can be easily attached, and the area of the light emitting surface connected to the attachment also increases. As a result, the efficiency of extracting light from the light emitting element can be further improved, and the attachment of the attachment is facilitated.
【００１４】請求項４の発明にかかる発光ダイオード
は、請求項１乃至請求項３のいずれか１つの構成におい
て、前記アタッチメントは略発光素子の発光面を原点と
する半球状の外形を有するものである。A light emitting diode according to a fourth aspect of the present invention is the light emitting diode according to any one of the first to third aspects, wherein the attachment has a hemispherical outer shape whose origin is substantially the light emitting surface of the light emitting element. is there.
【００１５】かかる構成のＬＥＤにおいては、発光素子
の発光面からアタッチメントに取り出された光は、発光
面を原点とする半球状のアタッチメントの放射面へ略垂
直入射し、高い効率で外部放射される。これによって、
発光素子からの光取り出し効率を一段と向上させること
ができる。In the LED having such a structure, the light extracted from the light emitting surface of the light emitting element to the attachment is substantially vertically incident on the emission surface of the hemispherical attachment whose origin is the light emitting surface and is radiated to the outside with high efficiency. . by this,
The light extraction efficiency from the light emitting element can be further improved.
【００１６】請求項５の発明にかかる発光ダイオード
は、請求項１乃至請求項４のいずれか１つの構成におい
て、前記発光素子は窒化ガリウム（ＧａＮ）を発光層と
するものである。According to a fifth aspect of the present invention, in the light emitting diode according to any one of the first to fourth aspects, the light emitting element uses gallium nitride (GaN) as a light emitting layer.
【００１７】窒化ガリウムは耐熱性が高いため、光学的
接合手段の選択の自由度が大きくなるという利点があ
る。したがって、窒化ガリウムの屈折率（ｎ＝２．４）
にできるだけ近い光学的接合手段を選んで発光面に接合
することによって、光取り出し効率をさらに向上させる
ことができる。なお、両方の電極を底面に設けて窒化ガ
リウムの上に基板が載っている場合でも（この場合は基
板が発光面になる）、基板の屈折率にできるだけ近い光
学的接合手段を選ぶことができるので光取り出し効率を
さらに向上させることができる。Since gallium nitride has high heat resistance, it has an advantage that the degree of freedom in selecting an optical joining means is increased. Therefore, the refractive index of gallium nitride (n = 2.4)
It is possible to further improve the light extraction efficiency by selecting an optical joining means as close as possible to the above and joining it to the light emitting surface. Even when both electrodes are provided on the bottom surface and the substrate is placed on gallium nitride (in this case, the substrate serves as the light emitting surface), an optical joining means that is as close as possible to the refractive index of the substrate can be selected. Therefore, the light extraction efficiency can be further improved.
【００１８】このようにして、窒化ガリウムを発光層と
する発光素子を用いることによって、光学的接合手段の
選択の自由度が大きくなって、光取り出し効率をさらに
向上させることができる発光ダイオードとなる。In this way, by using the light emitting element using gallium nitride as the light emitting layer, the degree of freedom in selecting the optical joining means is increased, and the light emitting diode can be further improved in the light extraction efficiency. .
【００１９】請求項６の発明にかかる発光ダイオード
は、請求項１乃至請求項５のいずれか１つの構成におい
て、前記アタッチメントは二酸化チタン（ＴｉＯ2 ）か
らなるものである。According to a sixth aspect of the present invention, in the light emitting diode according to any one of the first to fifth aspects, the attachment is made of titanium dioxide (TiO 2 ).
【００２０】二酸化チタン（ＴｉＯ2 ）は屈折率がｎ＝
２．４と大きく透明性にも優れているので、アタッチメ
ントの構成材料として適している。窒化ガリウム（Ｇａ
Ｎ）の屈折率もｎ＝２．４であるので、両者の間にｎ＝
２．４に近い光学的接合手段を挟んで接合することによ
って、窒化ガリウムの発光層からの光取り出し効率が非
常に大きくなって、光出力の大きい発光ダイオードとな
る。また、その他の発光素子例えば砒素化ガリウム（Ｇ
ａＡｓ）を発光層とする発光素子等でも、砒素化ガリウ
ムの屈折率がｎ＝３．９と大きいので、屈折率の大きい
二酸化チタンをアタッチメントとして用いることによっ
て、従来の透明エポキシ樹脂による封止に比べて格段に
光取り出し効率を向上させることができる。Titanium dioxide (TiO 2 ) has a refractive index of n =
Since it is as large as 2.4 and has excellent transparency, it is suitable as a constituent material of an attachment. Gallium nitride (Ga
Since the refractive index of N) is also n = 2.4, n =
By joining with the optical joining means close to 2.4, the light extraction efficiency of gallium nitride from the light emitting layer becomes very large, and a light emitting diode with a large light output is obtained. In addition, other light emitting elements such as gallium arsenide (G
Even in a light-emitting element having a light emitting layer of aAs), gallium arsenide has a large refractive index of n = 3.9, and thus titanium dioxide having a large refractive index is used as an attachment to seal with a conventional transparent epoxy resin. In comparison, the light extraction efficiency can be significantly improved.
【００２１】[0021]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.
【００２２】実施の形態１
まず、本発明の実施の形態１について、図１を参照して
説明する。図１は本発明の実施の形態１にかかる発光ダ
イオードの全体構成を示す縦断面図である。First Embodiment First, a first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a vertical cross-sectional view showing the overall structure of the light emitting diode according to the first embodiment of the present invention.
【００２３】図１に示されるように、本実施の形態１の
ＬＥＤ１は、アルミニウム基板９の上に絶縁層８を挟ん
で回路パターン７を形成し、この回路パターン７の上に
ＧａＮ系発光素子２をマウントしている。発光素子２は
サファイア（Ａｌ2Ｏ3 ）基板４を下にして窒化ガリウ
ム（ＧａＮ）の発光層３を上にしてマウントされてお
り、したがって両方の電極は上面に形成されている。こ
れら両方の電極は、それぞれワイヤ６によって互いに絶
縁された回路パターン７にボンディングされて電気的接
続がとられている。このようにして電気的接続がなされ
た発光素子２の発光面に、光学的接合手段としての高屈
折率樹脂（ｎ＝１．７）１０を介して、高屈折率ガラス
（ｎ＝１．９）によって形成された外形が半球状のアタ
ッチメント５の中心部分が接続されている。As shown in FIG. 1, in the LED 1 according to the first embodiment, a circuit pattern 7 is formed on an aluminum substrate 9 with an insulating layer 8 interposed therebetween, and a GaN-based light emitting device is formed on the circuit pattern 7. 2 is mounted. The light emitting device 2 is mounted with the sapphire (Al 2 O 3 ) substrate 4 down and the light emitting layer 3 of gallium nitride (GaN) up, so that both electrodes are formed on the top surface. Both of these electrodes are electrically connected to each other by bonding to a circuit pattern 7 which is insulated from each other by a wire 6. A high-refractive index glass (n = 1.9) is provided on the light-emitting surface of the light-emitting element 2 electrically connected in this manner through a high-refractive index resin (n = 1.7) 10 as an optical joining means. The central portion of the attachment 5 having a hemispherical outer shape formed by (1) is connected.
【００２４】これによって、屈折率ｎ＝２．４の発光層
３から発せられた光は、ｎ＝１．７の高屈折率樹脂１０
を通過して、ｎ＝１．９のアタッチメント５の中に入
る。このように屈折率が高く維持されているため、発光
層３から発せられた光は高い光取り出し効率でアタッチ
メント５に至り、発光層３を原点とする半球状に形成さ
れたアタッチメント５の放射面に略垂直に入射するので
極めて高い効率で外部放射される。このようにして、本
実施の形態１のＬＥＤ１においては、高い光取り出し効
率を得ることができる。なお、２本のワイヤ６が接続さ
れている部分のみは、アタッチメント５内に予め空間が
設けられている。As a result, the light emitted from the light emitting layer 3 having a refractive index n = 2.4 is high-refractive index resin 10 having a refractive index n = 1.7.
Passing through and entering the attachment 5 with n = 1.9. Since the refractive index is maintained high as described above, the light emitted from the light emitting layer 3 reaches the attachment 5 with high light extraction efficiency, and the emission surface of the attachment 5 formed in a hemispherical shape with the light emitting layer 3 as the origin. Since it is incident almost perpendicularly to, it is radiated to the outside with extremely high efficiency. In this way, in the LED 1 of the first embodiment, high light extraction efficiency can be obtained. A space is provided in advance in the attachment 5 only at the portion where the two wires 6 are connected.
【００２５】このようにして、本実施の形態１のＬＥＤ
１においては、発光素子２を樹脂封止する代わりに高屈
折率の光学的アタッチメント５を高屈折率の光学的接合
手段１０で接続することによって発光素子からの光取り
出し効率を向上させることができる。なお、上記実施の
形態では、発光素子と、アタッチメントとを光学的接合
手段を介して接続すると説明したが、この接合手段は接
着性の材料を用いても良いし、アタッチメントの保持部
を備えれば、接着性の材料でなくても良い。Thus, the LED of the first embodiment
In 1, the light extraction efficiency from the light emitting element can be improved by connecting the high refractive index optical attachment 5 with the high refractive index optical joining means 10 instead of sealing the light emitting element 2 with resin. . In the above embodiment, the light emitting element and the attachment are described to be connected via the optical joining means, but this joining means may be made of an adhesive material, or may be provided with a holding portion for the attachment. For example, the material need not be an adhesive material.
【００２６】実施の形態２
次に、本発明の実施の形態２について、図１を参考にし
ながら説明する。Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG.
【００２７】本実施の形態２のＬＥＤが実施の形態１の
ＬＥＤ１と異なるのは、光学的接合手段１０として高屈
折率ガラスバインダー（ｎ＝２．０）を用いて、アタッ
チメント５として二酸化チタン（ＴｉＯ2 ）（ｎ＝２．
４）によって形成された外形が半球状のアタッチメント
を装着した点である。これによって、屈折率ｎ＝２．４
の発光層３から発せられた光は、ｎ＝２．０の高屈折率
ガラスバインダー１０を通過して、ｎ＝２．４のアタッ
チメント５の中に入る。このように屈折率がより高く維
持されているため、発光層３から発せられた光は非常に
高い光取り出し効率でアタッチメント５に至り、発光層
３を原点とする半球状に形成されたアタッチメント５の
放射面に略垂直に入射するので極めて高い効率で外部放
射される。このようにして、本実施の形態２のＬＥＤに
おいては、さらに高い光取り出し効率を得ることができ
る。The LED of the second embodiment is different from the LED 1 of the first embodiment in that a high-refractive index glass binder (n = 2.0) is used as the optical joining means 10 and titanium dioxide ( TiO 2 ) (n = 2.
This is the point where the attachment formed in 4) has a hemispherical outer shape. As a result, the refractive index n = 2.4
The light emitted from the light emitting layer 3 passes through the high-refractive index glass binder 10 having n = 2.0 and enters the attachment 5 having n = 2.4. Since the refractive index is kept higher as described above, the light emitted from the light emitting layer 3 reaches the attachment 5 with a very high light extraction efficiency, and the attachment 5 formed in a hemispherical shape with the light emitting layer 3 as the origin. Since it is incident almost perpendicularly to the radiation surface of, the external radiation is extremely efficient. In this way, in the LED of the second embodiment, higher light extraction efficiency can be obtained.
【００２８】実施の形態３
次に、本発明の実施の形態３について、図２及び図３を
参照して説明する。図２は本発明の実施の形態３にかか
る発光ダイオードの全体構成を示す縦断面図である。図
３は各界面における光路の変化を示す説明図である。Third Embodiment Next, a third embodiment of the present invention will be described with reference to FIGS. FIG. 2 is a vertical sectional view showing the overall structure of the light emitting diode according to the third embodiment of the present invention. FIG. 3 is an explanatory diagram showing changes in the optical path at each interface.
【００２９】図２に示されるように、本実施の形態３の
ＬＥＤ１１においては、発光素子２をフリップタイプと
してマウントしている。即ち、アルミニウム基板１９の
上に絶縁層１８を挟んで回路パターン１７が形成され、
この回路パターン１７の上にＧａＮ系発光素子２が、サ
ファイア（Ａｌ2Ｏ3 ）基板４を上にして窒化ガリウム
（ＧａＮ）の発光層３を下にしてマウントされており、
したがって両方の電極１６は底面に形成されている。こ
れら両方の電極１６は、回路パターン１７に直接接続さ
れて電気的接続がとられている。As shown in FIG. 2, in the LED 11 of the third embodiment, the light emitting element 2 is mounted as a flip type. That is, the circuit pattern 17 is formed on the aluminum substrate 19 with the insulating layer 18 interposed therebetween.
The GaN-based light emitting device 2 is mounted on the circuit pattern 17 with the sapphire (Al 2 O 3 ) substrate 4 facing upward and the light emitting layer 3 of gallium nitride (GaN) facing downward.
Therefore, both electrodes 16 are formed on the bottom surface. Both of these electrodes 16 are directly connected to the circuit pattern 17 for electrical connection.
【００３０】このようにして電気的接続がなされた発光
素子２の発光面に、光学的接合手段としての高屈折率樹
脂（ｎ＝１．７）２０を介して、高屈折率ガラス（ｎ＝
１．９）によって形成された外形が半球状のアタッチメ
ント１５の中心部分が接続されている。これによって、
屈折率ｎ＝２．４の発光層３から発せられた光は、まず
ｎ＝１．７のサファイア（Ａｌ2Ｏ3 ）基板４の中に入
り、ｎ＝１．７の高屈折率樹脂２０を通過して、ｎ＝
１．９のアタッチメント１５の中に入る。このように屈
折率が高く維持されているため、発光層３から発せられ
た光は高い光取り出し効率でアタッチメント１５に至
り、発光層３を原点とする半球状に形成されたアタッチ
メント１５の放射面に略垂直に入射するので極めて高い
効率で外部放射される。このようにして、本実施の形態
３のＬＥＤ１１においては、高い光取り出し効率を得る
ことができる。On the light emitting surface of the light emitting element 2 electrically connected in this way, a high refractive index glass (n = n) is provided through a high refractive index resin (n = 1.7) 20 as an optical joining means.
The central portion of the attachment 15 having a hemispherical outer shape formed by 1.9) is connected. by this,
Light emitted from the light emitting layer 3 having a refractive index n = 2.4 first enters the sapphire (Al 2 O 3 ) substrate 4 having a refractive index n = 1.7, and the high refractive index resin 20 having a refractive index n = 1.7 is used. N =
Enter the attachment 15 of 1.9. Since the refractive index is maintained high as described above, the light emitted from the light emitting layer 3 reaches the attachment 15 with high light extraction efficiency, and the emission surface of the hemispherical attachment 15 having the light emitting layer 3 as the origin. Since it is incident almost perpendicularly to, it is radiated to the outside with extremely high efficiency. In this way, in the LED 11 of the third embodiment, high light extraction efficiency can be obtained.
【００３１】実施の形態４
次に、本発明の実施の形態４について、図２を参考にし
ながら説明する。Fourth Embodiment Next, a fourth embodiment of the present invention will be described with reference to FIG.
【００３２】本実施の形態４のＬＥＤが実施の形態３の
ＬＥＤ１１と異なるのは、発光素子２が屈折率ｎ＝２．
５の炭化珪素（ＳｉＣ）基板４の上に窒化ガリウムをエ
ピタキシャル成長させて発光層３を形成したものである
点である。これによって、屈折率ｎ＝２．４の発光層３
から発せられた光は、まずｎ＝２．５の炭化珪素基板４
の中に入り、ｎ＝１．７の高屈折率樹脂２０を通過し
て、ｎ＝１．９のアタッチメント１５の中に入る。この
ように発光面となる炭化珪素基板４が高い屈折率を有し
ているために、発光層３から発せられた光は一段と高い
光取り出し効率でアタッチメント１５に至り、発光層３
を原点とする半球状に形成されたアタッチメント１５の
放射面に略垂直に入射するので極めて高い効率で外部放
射される。このようにして、本実施の形態４のＬＥＤに
おいては、一段と高い光取り出し効率を得ることができ
る。The LED of the fourth embodiment is different from the LED 11 of the third embodiment in that the light emitting element 2 has a refractive index n = 2.
The gallium nitride is epitaxially grown on the silicon carbide (SiC) substrate 4 of No. 5 to form the light emitting layer 3. As a result, the light emitting layer 3 having the refractive index n = 2.4
The light emitted from the silicon carbide substrate 4 is n = 2.5.
Inside, and passes through the high-refractive-index resin 20 with n = 1.7, and then into the attachment 15 with n = 1.9. Since the silicon carbide substrate 4 serving as the light emitting surface has a high refractive index as described above, the light emitted from the light emitting layer 3 reaches the attachment 15 with much higher light extraction efficiency, and the light emitting layer 3 is emitted.
Since the light is incident on the radiation surface of the attachment 15 formed in a hemispherical shape whose origin is at, substantially vertically, it is radiated to the outside with extremely high efficiency. In this way, in the LED of the fourth embodiment, much higher light extraction efficiency can be obtained.
【００３３】上記各実施の形態においては、発光層３を
窒化ガリウムとした発光素子を用いた場合について説明
したが、窒化ガリウム以外の砒素化ガリウム（ＧａＡ
ｓ）等の素材を発光層とした発光素子を用いても良い。
また、アタッチメント５，１５によって形成される光放
射面を半球状とした場合について説明したが、光放射面
としては、平坦面を始めとして他にも種々の形状とする
ことができる。一般に、発光素子内は発光素子が発光し
た光の吸収率が高いので、発光素子内から光を取り出す
だけでも効果を得ることができる。In each of the above embodiments, the case where the light emitting element in which the light emitting layer 3 is gallium nitride is used is described, but gallium arsenide (GaA) other than gallium nitride is used.
A light emitting element having a light emitting layer made of a material such as s) may be used.
Further, although the case where the light emitting surface formed by the attachments 5 and 15 is a hemispherical shape has been described, the light emitting surface may have various shapes other than the flat surface. In general, since the light emitting element has a high absorptance of the light emitted by the light emitting element, the effect can be obtained only by extracting the light from the light emitting element.
【００３４】さらに、上記各実施の形態に固有の効果と
して、耐熱性の高い窒化ガリウムを発光層とした発光素
子を用いているために、光学接続剤の選択の自由度が大
きくなり、より高屈折率の光学接続剤を用いることによ
って、光取り出し効率をより高くすることができるとい
う利点がある。Further, as an effect peculiar to each of the above-mentioned embodiments, since the light emitting element using gallium nitride having a high heat resistance as the light emitting layer is used, the degree of freedom in selection of the optical connecting agent is increased, and the higher effect is obtained. The use of an optical connecting agent having a refractive index has an advantage that the light extraction efficiency can be further increased.
【００３５】発光ダイオードのその他の部分の構成、形
状、数量、材質、大きさ、接続関係等についても、上記
各実施の形態に限定されるものではない。The configuration, shape, quantity, material, size, connection relationship, etc. of the other parts of the light emitting diode are not limited to those in the above-mentioned respective embodiments.
【００３６】[0036]
【発明の効果】以上説明したように、請求項１の発明に
かかる発光ダイオードは、発光素子と、屈折率１．７以
上でかつ前記発光素子と同等以下の範囲の屈折率を有す
る材料からなるアタッチメントとを備え、前記アタッチ
メントと前記発光素子の発光面とは、屈折率１．７以上
でかつ前記発光素子と同等以下の範囲の屈折率材料から
なる光学的接合手段により光学的に接合されているもの
である。As described above, the light emitting diode according to the invention of claim 1 is composed of a light emitting element and a material having a refractive index in the range of 1.7 or more and equal to or less than the light emitting element. An attachment is provided, and the attachment and the light emitting surface of the light emitting element are optically joined by an optical joining means made of a refractive index material having a refractive index of 1.7 or more and a range of the same or less than that of the light emitting element. There is something.
【００３７】かかる構成のＬＥＤにおいては、発光素子
の光は発光面に接合された屈折率１．７以上でかつ発光
素子と同等以下の範囲の屈折率材料からなる光学的接合
手段によって高い光取り出し効率で取り出され、さらに
屈折率１．７以上でかつ発光素子と同等以下の範囲の屈
折率を有する材料からなるアタッチメントによって高い
光取り出し効率で取り出されて、アタッチメントの表面
から外部へ放射される。これによって、発光素子から外
部へ取り出される光取り出し効率は、発光素子を透明エ
ポキシ樹脂で封止した場合に比べて著しく向上する。In the LED having such a structure, the light of the light emitting element is highly extracted by the optical joining means made of the refractive index material joined to the light emitting surface in the range of the refractive index of 1.7 or more and the same or less than that of the light emitting element. It is efficiently extracted, and further, it is extracted with high light extraction efficiency by an attachment made of a material having a refractive index of 1.7 or more and a refractive index in the range equal to or less than that of the light emitting element, and radiated to the outside from the surface of the attachment. As a result, the efficiency of extracting light from the light emitting element to the outside is significantly improved as compared with the case where the light emitting element is sealed with a transparent epoxy resin.
【００３８】このようにして、発光素子を樹脂封止する
代わりに高屈折率の光学的アタッチメントを接合するこ
とによって発光素子からの光取り出し効率を向上させる
ことができる発光ダイオードとなる。In this way, a light emitting diode can be obtained in which the light extraction efficiency from the light emitting element can be improved by joining an optical attachment having a high refractive index instead of sealing the light emitting element with resin.
【００３９】請求項２の発明にかかる発光ダイオード
は、高屈折率材料で形成された発光素子と、屈折率１．
７以上でかつ前記発光素子と同等以下の範囲の屈折率を
有する高範囲屈折率材料からなるアタッチメントとを備
え、前記アタッチメントと前記発光素子の発光面とは直
接融着されているものである。A light emitting diode according to a second aspect of the present invention includes a light emitting element formed of a high refractive index material and a refractive index of 1.
An attachment made of a high range refractive index material having a refractive index of 7 or more and equal to or less than that of the light emitting element is provided, and the attachment and the light emitting surface of the light emitting element are directly fused.
【００４０】アタッチメントを構成する高屈折材料によ
っては、融点が低くて発光素子の発光面に直接融着する
ことができるものがある。この場合には、間に光学的接
合手段を挟む必要がないので構成が簡単になるととも
に、界面が１つになるので発光素子からアタッチメント
への光取り出し効率がより向上する。Some high-refractive-index materials forming the attachment have a low melting point and can be directly fused to the light-emitting surface of the light-emitting element. In this case, since it is not necessary to sandwich an optical joining means between them, the structure is simplified, and since there is one interface, the light extraction efficiency from the light emitting element to the attachment is further improved.
【００４１】このようにして、発光素子を樹脂封止する
代わりに高屈折率の光学的アタッチメントを直接接合す
ることによって発光素子からの光取り出し効率をより向
上させることができる発光ダイオードとなる。In this way, a light emitting diode can be obtained in which the light extraction efficiency from the light emitting element can be further improved by directly joining the optical attachment having a high refractive index instead of sealing the light emitting element with resin.
【００４２】請求項３の発明にかかる発光ダイオード
は、請求項１または請求項２の構成において、前記発光
素子は底面に両方の電極を備えているものである。According to a third aspect of the present invention, in the light emitting diode according to the first or second aspect, the light emitting element is provided with both electrodes on the bottom surface.
【００４３】かかる構成のＬＥＤにおいては、請求項１
または請求項２に記載の効果に加えて、発光面側に電極
がないのでアタッチメントの取り付けが容易になり、ま
たアタッチメントに接続される発光面の面積も増える。
これによって、発光素子からの光取り出し効率をさらに
向上させることができるとともに、アタッチメントの取
り付けが容易な発光ダイオードとなる。According to the LED having such a structure,
Alternatively, in addition to the effect described in claim 2, since there is no electrode on the light emitting surface side, the attachment can be easily attached, and the area of the light emitting surface connected to the attachment is increased.
As a result, the efficiency of extracting light from the light emitting element can be further improved, and the attachment of the attachment is facilitated.
【００４４】請求項４の発明にかかる発光ダイオード
は、請求項１乃至請求項３のいずれか１つの構成におい
て、前記アタッチメントは略発光素子の発光面を原点と
する半球状の外形を有するものである。A light emitting diode according to a fourth aspect of the present invention is the light emitting diode according to any one of the first to third aspects, wherein the attachment has a hemispherical outer shape whose origin is substantially the light emitting surface of the light emitting element. is there.
【００４５】かかる構成のＬＥＤにおいては、請求項１
乃至請求項３のいずれか１つに記載の効果に加えて、発
光素子の発光面からアタッチメントに取り出された光
は、発光面を原点とする半球状のアタッチメントの放射
面へ略垂直入射し、高い効率で外部放射される。これに
よって、発光素子からの光取り出し効率を一段と向上さ
せることができる。According to the LED having the above structure,
In addition to the effect according to any one of claims 3 to 3, the light extracted from the light emitting surface of the light emitting element to the attachment is substantially vertically incident on the emission surface of the hemispherical attachment whose origin is the light emitting surface, Externally radiated with high efficiency. Thereby, the light extraction efficiency from the light emitting element can be further improved.
【００４６】請求項５の発明にかかる発光ダイオード
は、請求項１乃至請求項４のいずれか１つの構成におい
て、前記発光素子は窒化ガリウム（ＧａＮ）を発光層と
するものである。According to a fifth aspect of the present invention, in the light emitting diode according to any one of the first to fourth aspects, the light emitting element uses gallium nitride (GaN) as a light emitting layer.
【００４７】請求項１乃至請求項４のいずれか１つに記
載の効果に加えて、窒化ガリウムは耐熱性が高いため、
光学的接合手段の選択の自由度が大きくなるという利点
がある。したがって、窒化ガリウムの屈折率（ｎ＝２．
４）にできるだけ近い光学的接合手段を選んで発光面に
接合することによって、光取り出し効率をさらに向上さ
せることができる。なお、両方の電極を底面に設けて窒
化ガリウムの上に基板が載っている場合でも（この場合
は基板が発光面になる）、基板の屈折率にできるだけ近
い光学的接合手段を選ぶことができるので光取り出し効
率をさらに向上させることができる。In addition to the effect according to any one of claims 1 to 4, gallium nitride has high heat resistance.
There is an advantage that the degree of freedom in selecting the optical joining means is increased. Therefore, the refractive index of gallium nitride (n = 2.
By selecting an optical joining means as close as possible to 4) and joining it to the light emitting surface, the light extraction efficiency can be further improved. Even when both electrodes are provided on the bottom surface and the substrate is placed on gallium nitride (in this case, the substrate serves as the light emitting surface), an optical joining means that is as close as possible to the refractive index of the substrate can be selected. Therefore, the light extraction efficiency can be further improved.
【００４８】このようにして、窒化ガリウムを発光層と
する発光素子を用いることによって、光学的接合手段の
選択の自由度が大きくなって、光取り出し効率をさらに
向上させることができる発光ダイオードとなる。In this way, by using the light emitting device using gallium nitride as the light emitting layer, the degree of freedom in selecting the optical joining means is increased, and the light emitting diode can further improve the light extraction efficiency. .
【００４９】請求項６の発明にかかる発光ダイオード
は、請求項１乃至請求項５のいずれか１つの構成におい
て、前記アタッチメントは二酸化チタン（ＴｉＯ2 ）か
らなるものである。According to a sixth aspect of the present invention, in the light emitting diode according to any one of the first to fifth aspects, the attachment is made of titanium dioxide (TiO 2 ).
【００５０】請求項１乃至請求項５のいずれか１つに記
載の効果に加えて、二酸化チタン（ＴｉＯ2 ）は屈折率
がｎ＝２．４と大きく透明性にも優れているので、アタ
ッチメントの構成材料として適している。窒化ガリウム
（ＧａＮ）の屈折率もｎ＝２．４であるので、両者の間
にｎ＝２．４に近い光学的接合手段を挟んで接合するこ
とによって、窒化ガリウムの発光層からの光取り出し効
率が非常に大きくなって、光出力の大きい発光ダイオー
ドとなる。また、その他の発光素子例えば砒素化ガリウ
ム（ＧａＡｓ）を発光層とする発光素子等でも、砒素化
ガリウムの屈折率がｎ＝３．９と大きいので、屈折率の
大きい二酸化チタンをアタッチメントとして用いること
によって、従来の透明エポキシ樹脂による封止に比べて
格段に光取り出し効率を向上させることができる。In addition to the effect according to any one of claims 1 to 5, titanium dioxide (TiO 2 ) has a large refractive index of n = 2.4 and is excellent in transparency, so that the attachment Suitable as a constituent material of. Since the refractive index of gallium nitride (GaN) is also n = 2.4, the optical extraction means of gallium nitride can be extracted from the light emitting layer by bonding by sandwiching an optical bonding means close to n = 2.4 between them. The efficiency is extremely high, and the light emitting diode has high light output. Further, in other light emitting elements such as a light emitting element using gallium arsenide (GaAs) as a light emitting layer, the refractive index of gallium arsenide is as large as n = 3.9, so titanium dioxide having a large refractive index should be used as an attachment. As a result, the light extraction efficiency can be remarkably improved as compared with the conventional sealing with a transparent epoxy resin.
【図１】 図１は本発明の実施の形態１にかかる発光ダ
イオードの全体構成を示す縦断面図である。FIG. 1 is a vertical cross-sectional view showing an overall configuration of a light emitting diode according to a first embodiment of the present invention.
【図２】 図２は本発明の実施の形態３にかかる発光ダ
イオードの全体構成を示す縦断面図である。FIG. 2 is a vertical cross-sectional view showing the overall structure of a light emitting diode according to a third embodiment of the present invention.
【図３】 図３は従来の発光ダイオードの構成を示す縦
断面図である。FIG. 3 is a vertical cross-sectional view showing the structure of a conventional light emitting diode.
【符号の説明】 １，１１ 発光ダイオード ２ 発光素子 ３ 発光層 ５，１５ アタッチメント １０，２０ 光学的接合手段 １６ 両方の電極[Explanation of symbols] 1,11 Light emitting diode 2 light emitting element 3 light emitting layer 5,15 attachment 10, 20 Optical joining means 16 both electrodes
Claims (6)
記発光素子と同等以下の範囲の屈折率を有する材料から
なるアタッチメントとを備え、 前記アタッチメントと前記発光素子の発光面とは、屈折
率１．７以上でかつ前記発光素子と同等以下の範囲の屈
折率材料からなる光学的接合手段により光学的に接合さ
れていることを特徴とする発光ダイオード。1. A light emitting device, and an attachment made of a material having a refractive index of 1.7 or more and a refractive index in a range equal to or less than that of the light emitting device, wherein the attachment and the light emitting surface of the light emitting device are A light-emitting diode, which is optically joined by an optical joining means made of a material having a refractive index of 1.7 or more and equal to or less than that of the light emitting element.
屈折率１．７以上でかつ前記発光素子と同等以下の範囲
の屈折率を有する高範囲屈折率材料からなるアタッチメ
ントとを備え、 前記アタッチメントと前記発光素子の発光面とは直接融
着されていることを特徴とする発光ダイオード。2. A light emitting device formed of a high refractive index material,
An attachment made of a high range refractive index material having a refractive index of 1.7 or more and a refractive index in the range equal to or less than that of the light emitting element, wherein the attachment and the light emitting surface of the light emitting element are directly fused. A light emitting diode characterized by the above.
ていることを特徴とする請求項１または請求項２に記載
の発光ダイオード。3. The light emitting diode according to claim 1, wherein the light emitting device is provided with both electrodes on a bottom surface thereof.
光面を原点とする半球状の外形を有することを特徴とす
る請求項１乃至請求項３のいずれか１つに記載の発光ダ
イオード。4. The light emitting diode according to claim 1, wherein the attachment has a hemispherical outer shape whose origin is the light emitting surface of the light emitting element.
を発光層とするものであることを特徴とする請求項１乃
至請求項４のいずれか１つに記載の発光ダイオード。5. The light emitting device is gallium nitride (GaN)
5. The light emitting diode according to claim 1, wherein the light emitting layer is a light emitting layer.
ｉＯ2 ）からなるものであることを特徴とする請求項１
乃至請求項５のいずれか１つに記載の発光ダイオード。6. The attachment is titanium dioxide (T
iO 2 ).
The light emitting diode according to claim 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001195960A JP2003017756A (en) | 2001-06-28 | 2001-06-28 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001195960A JP2003017756A (en) | 2001-06-28 | 2001-06-28 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003017756A true JP2003017756A (en) | 2003-01-17 |
Family
ID=19033849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001195960A Pending JP2003017756A (en) | 2001-06-28 | 2001-06-28 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003017756A (en) |
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| WO2006112417A1 (en) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those |
| KR100708937B1 (en) | 2005-10-05 | 2007-04-17 | 삼성전기주식회사 | High brightness light emitting diode |
| WO2007123239A1 (en) * | 2006-04-24 | 2007-11-01 | Asahi Glass Company, Limited | Light emitting device |
| WO2008041771A1 (en) * | 2006-10-05 | 2008-04-10 | Asahi Glass Co., Ltd. | Glass coated light emitting element, wiring board with light emitting element, method for producing wiring board with light emitting element, lighting device and projector |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380988A (en) * | 1976-12-27 | 1978-07-17 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS6196780A (en) * | 1984-10-17 | 1986-05-15 | Stanley Electric Co Ltd | Coating method of lead chip |
| JPH11163417A (en) * | 1997-09-26 | 1999-06-18 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
| JP2002141556A (en) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light emitting diode with improved light extraction efficiency |
| JP2002176200A (en) * | 2000-09-12 | 2002-06-21 | Lumileds Lighting Us Llc | Light emitting diode having improved light extraction efficiency |
-
2001
- 2001-06-28 JP JP2001195960A patent/JP2003017756A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5380988A (en) * | 1976-12-27 | 1978-07-17 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS6196780A (en) * | 1984-10-17 | 1986-05-15 | Stanley Electric Co Ltd | Coating method of lead chip |
| JPH11163417A (en) * | 1997-09-26 | 1999-06-18 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
| JP2002141556A (en) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light emitting diode with improved light extraction efficiency |
| JP2002176200A (en) * | 2000-09-12 | 2002-06-21 | Lumileds Lighting Us Llc | Light emitting diode having improved light extraction efficiency |
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| US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
| US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
| KR101186646B1 (en) | 2004-08-05 | 2012-09-28 | 서울반도체 주식회사 | Light emitting diode |
| JP2013225692A (en) * | 2005-03-14 | 2013-10-31 | Philips Lumileds Lightng Co Llc | Wavelength-converted semiconductor light emitting device |
| WO2006112417A1 (en) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | Glass-sealed light-emitting device, circuit board with glass-sealed light-emitting device, and methods for manufacturing those |
| US7872417B2 (en) | 2005-04-15 | 2011-01-18 | Asahi Glass Company, Limited | Glass-sealed light emitting element, circuit board with the glass-sealed light emitting element, and methods for manufacturing those |
| KR100708937B1 (en) | 2005-10-05 | 2007-04-17 | 삼성전기주식회사 | High brightness light emitting diode |
| US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
| WO2007123239A1 (en) * | 2006-04-24 | 2007-11-01 | Asahi Glass Company, Limited | Light emitting device |
| US7872281B2 (en) | 2006-10-05 | 2011-01-18 | Asahi Glass Company, Limited | Glass-coated light-emitting element, light-emitting element-attached wiring board, method for producing light-emitting element-attached wiring board, lighting device and projector |
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| WO2008041771A1 (en) * | 2006-10-05 | 2008-04-10 | Asahi Glass Co., Ltd. | Glass coated light emitting element, wiring board with light emitting element, method for producing wiring board with light emitting element, lighting device and projector |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| JP2011077491A (en) * | 2009-03-26 | 2011-04-14 | Toyoda Gosei Co Ltd | Method for manufacturing led lamp |
| US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
| JP2016525288A (en) * | 2013-07-26 | 2016-08-22 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | LED dome with internal high index pillar |
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| CN113826224B (en) * | 2021-07-01 | 2024-02-27 | 泉州三安半导体科技有限公司 | Light-emitting device |
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