JPS6196780A - Coating method of lead chip - Google Patents

Coating method of lead chip

Info

Publication number
JPS6196780A
JPS6196780A JP59217925A JP21792584A JPS6196780A JP S6196780 A JPS6196780 A JP S6196780A JP 59217925 A JP59217925 A JP 59217925A JP 21792584 A JP21792584 A JP 21792584A JP S6196780 A JPS6196780 A JP S6196780A
Authority
JP
Japan
Prior art keywords
refractive index
led chip
light beam
coating
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59217925A
Other languages
Japanese (ja)
Other versions
JPH0422352B2 (en
Inventor
Isato Oba
勇人 大場
Hiroo Sakai
酒井　弘生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP59217925A priority Critical patent/JPS6196780A/en
Publication of JPS6196780A publication Critical patent/JPS6196780A/en
Publication of JPH0422352B2 publication Critical patent/JPH0422352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F13/00—Illuminated signs; Luminous advertising
    • G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
    • G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To remarkably improve the utility rate of a light beam by sequentially or continuously varying the difference of the refractive index between an LED chip and air, coating, and effectively emitting the light beam from the ship externally. CONSTITUTION:An LED chip 1 is coated in a laminar state with a plurality of coating materials, the refractive indexes are sequentially stepwisely varied so that the refractive indexes decrease toward the surface layer. In other words, a 3-layer coating structure is formed of germanium glass 2 of refractive index n1=1.82, styrol resin 3 of refractive index n2=1.59 and methacrylic resin 4 of refractive index n3=1.49. However, n0 is the refractive index of LED ship 1, and n is the refractive index of air (n=1). Thus, since the coating is formed so that the difference of the refractive index between the LED chip and the air is sequentially stepwisely or continuously varied, the light beam from the LED chip can be effectively emitted, the light beam utility rate is remarkably enhanced, and the light beam of light and energy-saving type can be formed.

Description

【発明の詳細な説明】 （産業上の利用分野） この発明は、ＬＥＤチップのコーティング方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of coating an LED chip.

（従来の技術） 車両用灯具や表示装置等の光源としてＬＫＤが用いられ
、このＬＥＤは通常プリント基板やリードフレームにＬ
ＥＤチップをボンディングすると共に、透光性の合成樹
脂等でコーティングされた構造となっている。(Prior art) LKD is used as a light source for vehicle lamps, display devices, etc., and this LED is usually mounted on a printed circuit board or lead frame.
It has a structure in which the ED chip is bonded and coated with a transparent synthetic resin or the like.

（発明が解決しようとする問題点） 上記のようにコーティングされたＬＥＤは、ＬＥＤチッ
プやコーティングの屈折率と空気の屈折率とが大きく異
なるため、ＬＥＤチップからの光線が全反射して光の取
出し効率が低下している。コーティングを施さないで、
ＬＥＤチッゾから直接光を放射させる場合にも、ＬＥＤ
チップの屈折率と空気の屈折率との差によって同様の現
象が発生する。本発明は、このような従来の問題点を解
決するためになされたものである。(Problem to be Solved by the Invention) In an LED coated as described above, the refractive index of the LED chip or coating is significantly different from the refractive index of air, so the light rays from the LED chip are totally reflected and the light is The extraction efficiency is decreasing. without coating,
Even when emitting light directly from LED Chizzo, LED
A similar phenomenon occurs due to the difference between the refractive index of the chip and the refractive index of air. The present invention has been made to solve these conventional problems.

（問題点を解決するだめの手段） その問題点の解決にあたって、本発明はＬＥＤチップを
透光性の合成樹脂等でコーティングする方法において・
、ＬＥＤチップの屈折率と空気の屈折率との差を順次又
は連続的に変化させてコーティングすることを要旨とす
るものである。(Means for Solving the Problem) In order to solve the problem, the present invention provides a method for coating an LED chip with a transparent synthetic resin, etc.
The gist of this method is to perform coating by sequentially or continuously changing the difference between the refractive index of the LED chip and the refractive index of air.

（作　用） 上記の方法によって、ＬＥＤチップからの光線を外部に
有効に放射させ、光線の利用率を著しく向上させること
ができる。(Function) By the above method, the light beam from the LED chip can be effectively radiated to the outside, and the utilization rate of the light beam can be significantly improved.

（実施例） 以下、本発明の実施例を図面により説明すると、第１図
はＬＥＤチッグ１を複数のコーテイング材で層状にコー
ティングし、その屈折率を順次段階的に変化させた実施
例であり、表層に行くほど屈折率が小となっている。即
ち、図示の場合は、屈折率Ｊ＝１．８２のゲルマニウム
系ガラス２と、屈折率ｎ２＝　１．５９のスチロール樹
脂３と、屈折率ｎ３　＝　１．４９のメタクリル樹脂４
との三層コーティング構造にしである。但し、ｎｏはＬ
ＥＤチップ１の屈折率、ｎは空気の屈折率（ｎ＝１）で
ある。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings. Fig. 1 shows an example in which an LED chip 1 is coated with a plurality of coating materials in layers, and the refractive index is changed in a stepwise manner. , the refractive index decreases toward the surface layer. That is, in the case shown, germanium glass 2 with a refractive index J=1.82, styrene resin 3 with a refractive index n2=1.59, and methacrylic resin 4 with a refractive index n3=1.49.
It has a three-layer coating structure. However, no is L
The refractive index of the ED chip 1, n is the refractive index of air (n=1).

第３図は、本発明の他の実施例を示すもので、この場合
コーティング５は一層構造であるが、内部から表面に行
くにつれて屈折率が小となるように連続的に変化させた
ものであり、光ファイバーの製造と同じ方法で形成する
ことができる。FIG. 3 shows another embodiment of the present invention, in which the coating 5 has a single layer structure, but the refractive index is continuously changed from the inside to the surface so that it decreases. Yes, and can be formed using the same methods used to manufacture optical fibers.

（発明の効果） 以上説明した本発明方法によれば、ＬＩＩＣＤチップ抄 の屈折率と空気の屈折率との差を順次段階的に又は連続
的に変化させるようにコーティングしたので、ＬＥＤチ
ップからの光線を有効に放射させることができ、光線利
用率を著しく高め、明るくしかも省エネタイプの光源を
提供することができる。(Effects of the Invention) According to the method of the present invention explained above, since the coating is applied so that the difference between the refractive index of the LIICD chip and the refractive index of air is changed stepwise or continuously, It is possible to emit light rays effectively, significantly increasing the light utilization efficiency, and providing a bright and energy-saving light source.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明の実施例を示す説明図、第２図は、そ
の屈折率の段階的変化を示すグラフ図、第３図は、本発
明の池の実施例を示す説明図、第４図は、その屈折率の
連続的変化を示すグラフ図である。 １・・・・・・ＬＥＤチップ、 ２・・・・・・ゲルマニウム系ガラス、３・・・・・・
スチロール樹脂、４・・・・・・メタクリル樹脂、５・
・・・・・コーティング。 特許出願人　　スタンレー電気株式会社屈折率 屈折率FIG. 1 is an explanatory diagram showing an embodiment of the present invention, FIG. 2 is a graph diagram showing a stepwise change in the refractive index, and FIG. 3 is an explanatory diagram showing an embodiment of a pond according to the present invention. FIG. 4 is a graph showing continuous changes in the refractive index. 1...LED chip, 2...Germanium glass, 3...
Styrene resin, 4...methacrylic resin, 5.
·····coating. Patent applicant: Stanley Electric Co., Ltd. Refractive Index

Claims (1)

【特許請求の範囲】[Claims] 　ＬＥＤチップを透光性の合成樹脂等でコーティングす
る方法において、ＬＥＤチップの屈折率と空気の屈折率
との差を順次又は連続的に変化させてコーティングする
ことを特徴とするＬＥＤチツプのコーティング方法。A method of coating an LED chip with a light-transmitting synthetic resin, etc., characterized in that the coating is performed by sequentially or continuously changing the difference between the refractive index of the LED chip and the refractive index of air. .
JP59217925A 1984-10-17 1984-10-17 Coating method of lead chip Granted JPS6196780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59217925A JPS6196780A (en) 1984-10-17 1984-10-17 Coating method of lead chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59217925A JPS6196780A (en) 1984-10-17 1984-10-17 Coating method of lead chip

Publications (2)

Publication Number Publication Date
JPS6196780A true JPS6196780A (en) 1986-05-15
JPH0422352B2 JPH0422352B2 (en) 1992-04-16

Family

ID=16711873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59217925A Granted JPS6196780A (en) 1984-10-17 1984-10-17 Coating method of lead chip

Country Status (1)

Country Link
JP (1) JPS6196780A (en)

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331557U (en) * 1986-08-14 1988-03-01
JPH03222375A (en) * 1990-01-26 1991-10-01 Sharp Corp Light emitting diode array
JPH0463162U (en) * 1990-10-02 1992-05-29
EP0563991A2 (en) * 1992-04-03 1993-10-06 Eastman Kodak Company Light-emitting apparatus
DE19631736A1 (en) * 1996-08-06 1998-02-12 Stm Sensor Technologie Muenche Method and device for manufacturing lenses of micro-optical systems and light transmitter / light receiver system
JP2000150965A (en) * 1998-11-11 2000-05-30 Matsushita Electronics Industry Corp Semiconductor light emitting device
JP2003017756A (en) * 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd Light emitting diode
KR20030033273A (en) * 2001-10-19 2003-05-01 (주) 나노옵토테크놀러지 Chip type l.d.m
JP2003324215A (en) * 2002-04-30 2003-11-14 Toyoda Gosei Co Ltd Light emitting diode lamp
WO2003069685A3 (en) * 2002-02-14 2004-07-01 Enfis Ltd A light system
WO2004082036A1 (en) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
JP2005251875A (en) * 2004-03-02 2005-09-15 Toshiba Corp Semiconductor light emitting device
EP1538681A3 (en) * 2003-12-04 2005-09-21 Nitto Denko Corporation Process for producing optical semiconductor device
EP1580818A1 (en) * 2004-03-10 2005-09-28 Nitto Denko Corporation Process for producing optical semiconductor device
JP2005277127A (en) * 2004-03-25 2005-10-06 Stanley Electric Co Ltd Light-emitting device
EP1585179A1 (en) * 2004-04-05 2005-10-12 Nitto Denko Corporation Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet
EP1475846A3 (en) * 2003-05-06 2006-03-01 Seiko Epson Corporation Light emitting diode based light source with cooling liquid arrangement, and projection-type display apparatus
JP2006140362A (en) * 2004-11-15 2006-06-01 Nitto Denko Corp Optical semiconductor device sealing sheet and optical semiconductor device manufacturing method using the same
JPWO2004082036A1 (en) * 2003-03-10 2006-06-15 豊田合成株式会社 Solid element device and manufacturing method thereof
JP2006518111A (en) * 2003-02-14 2006-08-03 クリー　インコーポレイテッド Light emitting device incorporating a light emitting material
JP2007516601A (en) * 2003-09-08 2007-06-21 ナノクリスタル・ライティング・コーポレーション Efficient light packaging for LED lamps using high refractive index capsule materials
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
US7330319B2 (en) 2004-10-29 2008-02-12 3M Innovative Properties Company High brightness LED package with multiple optical elements
WO2008026699A1 (en) * 2006-08-30 2008-03-06 Kyocera Corporation Light-emitting device
JP2008085361A (en) * 2003-03-10 2008-04-10 Toyoda Gosei Co Ltd Solid element device
JP2008227502A (en) * 2007-03-13 2008-09-25 Cree Inc Graded dielectric layer
JP2008270791A (en) * 2007-03-28 2008-11-06 Kyocera Corp Light-emitting device and method of manufacturing the same
US7497597B2 (en) 2004-01-19 2009-03-03 Toyoda Gosei Co., Ltd. Light emitting apparatus
JP2009543321A (en) * 2006-07-06 2009-12-03 ティーアイアール テクノロジー エルピー Lighting device package
US7795625B2 (en) 2006-01-16 2010-09-14 Panasonic Corporation Semiconductor light-emitting device
CN102163682A (en) * 2010-01-28 2011-08-24 Lg伊诺特有限公司 Light emitting device package
JP2011187929A (en) * 2010-02-09 2011-09-22 Sony Corp Light emitting device and manufacturing method thereof
JP2011249856A (en) * 2011-09-14 2011-12-08 Toshiba Corp Semiconductor light-emitting device
JP4868427B2 (en) * 2008-11-13 2012-02-01 国立大学法人名古屋大学 Semiconductor light emitting device
JP2013225692A (en) * 2005-03-14 2013-10-31 Philips Lumileds Lightng Co Llc Wavelength-converted semiconductor light emitting device
KR20140074709A (en) * 2012-12-10 2014-06-18 삼성디스플레이 주식회사 Light emitting diode package and manufacturing method thereof
US9583683B2 (en) 2000-09-12 2017-02-28 Lumileds Llc Light emitting devices with optical elements and bonding layers
US9601672B2 (en) 2004-10-29 2017-03-21 3M Innovative Properties Company High brightness LED package

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113589A (en) * 1974-07-25 1976-02-03 Tokyo Shibaura Electric Co
JPS57164585A (en) * 1981-04-02 1982-10-09 Toshiba Corp Photosemiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113589A (en) * 1974-07-25 1976-02-03 Tokyo Shibaura Electric Co
JPS57164585A (en) * 1981-04-02 1982-10-09 Toshiba Corp Photosemiconductor device

Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331557U (en) * 1986-08-14 1988-03-01
JPH03222375A (en) * 1990-01-26 1991-10-01 Sharp Corp Light emitting diode array
JPH0463162U (en) * 1990-10-02 1992-05-29
EP0563991A2 (en) * 1992-04-03 1993-10-06 Eastman Kodak Company Light-emitting apparatus
EP0563991A3 (en) * 1992-04-03 1993-11-10 Eastman Kodak Co Light-emitting apparatus
DE19631736A1 (en) * 1996-08-06 1998-02-12 Stm Sensor Technologie Muenche Method and device for manufacturing lenses of micro-optical systems and light transmitter / light receiver system
US5945041A (en) * 1996-08-06 1999-08-31 Stm Sensor Technologie Munchen Gmbh Method and device for producing lenses of microoptical systems and optical emitter/receiver system
JP2000150965A (en) * 1998-11-11 2000-05-30 Matsushita Electronics Industry Corp Semiconductor light emitting device
US10312422B2 (en) 2000-09-12 2019-06-04 Lumileds Llc Light emitting devices with optical elements and bonding layers
US9583683B2 (en) 2000-09-12 2017-02-28 Lumileds Llc Light emitting devices with optical elements and bonding layers
JP2003017756A (en) * 2001-06-28 2003-01-17 Toyoda Gosei Co Ltd Light emitting diode
KR20030033273A (en) * 2001-10-19 2003-05-01 (주) 나노옵토테크놀러지 Chip type l.d.m
WO2003069685A3 (en) * 2002-02-14 2004-07-01 Enfis Ltd A light system
JP2003324215A (en) * 2002-04-30 2003-11-14 Toyoda Gosei Co Ltd Light emitting diode lamp
JP4791351B2 (en) * 2003-02-14 2011-10-12 クリー インコーポレイテッド Light emitting device incorporating a light emitting material
JP2006518111A (en) * 2003-02-14 2006-08-03 クリー　インコーポレイテッド Light emitting device incorporating a light emitting material
US8154047B2 (en) 2003-03-10 2012-04-10 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
JP2008085361A (en) * 2003-03-10 2008-04-10 Toyoda Gosei Co Ltd Solid element device
US7824937B2 (en) 2003-03-10 2010-11-02 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
JP4637160B2 (en) * 2003-03-10 2011-02-23 豊田合成株式会社 Method for manufacturing solid element device
JPWO2004082036A1 (en) * 2003-03-10 2006-06-15 豊田合成株式会社 Solid element device and manufacturing method thereof
WO2004082036A1 (en) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. Solid element device and method for manufacture thereof
US8685766B2 (en) 2003-03-10 2014-04-01 Toyoda Gosei Co., Ltd. Solid element device and method for manufacturing the same
EP1475846A3 (en) * 2003-05-06 2006-03-01 Seiko Epson Corporation Light emitting diode based light source with cooling liquid arrangement, and projection-type display apparatus
JP2007516601A (en) * 2003-09-08 2007-06-21 ナノクリスタル・ライティング・コーポレーション Efficient light packaging for LED lamps using high refractive index capsule materials
EP1538681A3 (en) * 2003-12-04 2005-09-21 Nitto Denko Corporation Process for producing optical semiconductor device
US7497597B2 (en) 2004-01-19 2009-03-03 Toyoda Gosei Co., Ltd. Light emitting apparatus
JP2005251875A (en) * 2004-03-02 2005-09-15 Toshiba Corp Semiconductor light emitting device
EP1580818A1 (en) * 2004-03-10 2005-09-28 Nitto Denko Corporation Process for producing optical semiconductor device
JP2005277127A (en) * 2004-03-25 2005-10-06 Stanley Electric Co Ltd Light-emitting device
US7221007B2 (en) 2004-04-05 2007-05-22 Nitto Denko Corporation Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet
EP1585179A1 (en) * 2004-04-05 2005-10-12 Nitto Denko Corporation Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet
CN100418212C (en) * 2004-04-05 2008-09-10 日东电工株式会社 Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet
US7330319B2 (en) 2004-10-29 2008-02-12 3M Innovative Properties Company High brightness LED package with multiple optical elements
US9601672B2 (en) 2004-10-29 2017-03-21 3M Innovative Properties Company High brightness LED package
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
EP1657756A3 (en) * 2004-11-15 2007-07-11 Nitto Denko Corporation Sheet for optical semiconductor element encapsulation and process for producing optical semiconductor device with the sheet
JP2006140362A (en) * 2004-11-15 2006-06-01 Nitto Denko Corp Optical semiconductor device sealing sheet and optical semiconductor device manufacturing method using the same
JP2013225692A (en) * 2005-03-14 2013-10-31 Philips Lumileds Lightng Co Llc Wavelength-converted semiconductor light emitting device
US7795625B2 (en) 2006-01-16 2010-09-14 Panasonic Corporation Semiconductor light-emitting device
EP2033235A2 (en) * 2006-05-26 2009-03-11 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
EP2033235A4 (en) * 2006-05-26 2012-05-23 Cree Inc Solid state light emitting device and method of making same
JP2009543321A (en) * 2006-07-06 2009-12-03 ティーアイアール テクノロジー エルピー Lighting device package
WO2008026699A1 (en) * 2006-08-30 2008-03-06 Kyocera Corporation Light-emitting device
JP2008227502A (en) * 2007-03-13 2008-09-25 Cree Inc Graded dielectric layer
JP2008270791A (en) * 2007-03-28 2008-11-06 Kyocera Corp Light-emitting device and method of manufacturing the same
US8405111B2 (en) 2008-11-13 2013-03-26 National University Corporation Nagoya University Semiconductor light-emitting device with sealing material including a phosphor
JP4868427B2 (en) * 2008-11-13 2012-02-01 国立大学法人名古屋大学 Semiconductor light emitting device
CN102163682A (en) * 2010-01-28 2011-08-24 Lg伊诺特有限公司 Light emitting device package
EP2355194A3 (en) * 2010-01-28 2014-05-14 LG Innotek Co., Ltd. Light emitting device package
JP2011187929A (en) * 2010-02-09 2011-09-22 Sony Corp Light emitting device and manufacturing method thereof
JP2011249856A (en) * 2011-09-14 2011-12-08 Toshiba Corp Semiconductor light-emitting device
KR20140074709A (en) * 2012-12-10 2014-06-18 삼성디스플레이 주식회사 Light emitting diode package and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0422352B2 (en) 1992-04-16

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