JP2003014855A - Radiation detector and detecting system - Google Patents

Radiation detector and detecting system

Info

Publication number
JP2003014855A
JP2003014855A JP2001194951A JP2001194951A JP2003014855A JP 2003014855 A JP2003014855 A JP 2003014855A JP 2001194951 A JP2001194951 A JP 2001194951A JP 2001194951 A JP2001194951 A JP 2001194951A JP 2003014855 A JP2003014855 A JP 2003014855A
Authority
JP
Japan
Prior art keywords
radiation
photoelectric conversion
circuit
processing
detecting apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001194951A
Other languages
Japanese (ja)
Other versions
JP2003014855A5 (en
JP4408593B2 (en
Inventor
Shinichi Takeda
慎市 竹田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001194951A priority Critical patent/JP4408593B2/en
Publication of JP2003014855A publication Critical patent/JP2003014855A/en
Publication of JP2003014855A5 publication Critical patent/JP2003014855A5/ja
Application granted granted Critical
Publication of JP4408593B2 publication Critical patent/JP4408593B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the weight of a radiation detector. SOLUTION: The radiation detector comprises a photoelectric conversion elements for converting light based on radiation into charges and control elements for controlling read out of the converted charges arranged on a plane in a pixel area wherein a substrate having a circuit for driving the control elements and a substrate having a circuit for processing the charges read out by the control element are disposed along one side of the pixel area while being superposed in the incident direction of light and a material for shielding radiation to the drive circuit and the processing circuit is provided above the substrate on the upper side.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、 放射線検出装置
及びシステムに関し、特に、医療用のX線検出装置や、
産業用の被破壊装置などの放射線検出装置及びシステム
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation detection apparatus and system, and more particularly to a medical X-ray detection apparatus and
The present invention relates to a radiation detection device and system such as an industrial destructible device.

【0002】[0002]

【従来の技術】従来、ファクシミリや複写機、スキャナ
あるいはX線検出装置等の読み取り装置として、縮小光
学系とCCD型センサーを組み合わせたシステムは、近
年になり水素化アモルファスシリコン(以下「a−S
i」と称する。)に代表される光電変換半導体材料の開
発により、光電変換素子及び信号処理部を大面積の基板
に形成し、情報源と等倍の光学系で読み取る密着型セン
サーの開発が進んでいる。
2. Description of the Related Art Conventionally, as a reading device such as a facsimile, a copying machine, a scanner or an X-ray detecting device, a system in which a reduction optical system and a CCD type sensor are combined has recently become a hydrogenated amorphous silicon (hereinafter referred to as "a-S").
i ". By the development of the photoelectric conversion semiconductor material typified by 1), the development of the contact type sensor in which the photoelectric conversion element and the signal processing unit are formed on a large-area substrate and read by an optical system of the same size as the information source is in progress.

【0003】特に、a−Siは光電変換材料としてだけ
でなく、薄膜電界効果型トランジスタ(以下「TFT」
と称する。)の半導体材料としても用いることができる
ので、光電変換半導体層とTFTの半導体層とを同時に
形成することができる利点を有している。
In particular, a-Si is not only used as a photoelectric conversion material, but also as a thin film field effect transistor (hereinafter referred to as "TFT").
Called. Since it can also be used as the semiconductor material of (1), it has an advantage that the photoelectric conversion semiconductor layer and the semiconductor layer of the TFT can be simultaneously formed.

【0004】図8は、従来の放射線検出装置におけるの
模式的回路図である。図9(A)〜図9(C)は従来の
放射線検出装置の概略の構成図であり、図9(A)は模
式的平面図、図9(B)及び図9(C)はそれぞれ図9
(A)のA−A’の模式的断面図、B−B’の模式的断
面図である。
FIG. 8 is a schematic circuit diagram of a conventional radiation detecting apparatus. 9 (A) to 9 (C) are schematic configuration diagrams of a conventional radiation detection apparatus, FIG. 9 (A) is a schematic plan view, and FIGS. 9 (B) and 9 (C) are diagrams respectively. 9
It is a schematic sectional drawing of AA 'of (A), and a schematic sectional drawing of BB'.

【0005】図8に示すように光電変換装置3の各画素
はフォトダイオード等からなる光電変換素子Pと薄膜ト
ランジスタ(TFT)等による信号転送素子Tで構成さ
れている。光電変換装置3の光電変換素子Pや信号転送
素子T及び配線Vs,Sig,Vgは、ガラス基板上に
薄膜半導体プロセスによって作製されている。
As shown in FIG. 8, each pixel of the photoelectric conversion device 3 is composed of a photoelectric conversion element P including a photodiode and a signal transfer element T including a thin film transistor (TFT). The photoelectric conversion element P, the signal transfer element T, and the wirings Vs, Sig, and Vg of the photoelectric conversion device 3 are manufactured on the glass substrate by a thin film semiconductor process.

【0006】フォトダイオードのカソード電極はバイア
スラインVsに接続されバイアス電圧が印加されてい
る。TFTのソース電極はデータラインSigNに、ゲ
ート電極はゲートラインVgNにそれぞれ接続されてい
る。この例において光電変換装置の駆動に必要な配線は
バイアスライン、データライン、ゲートラインである。
The cathode electrode of the photodiode is connected to the bias line Vs and a bias voltage is applied. The source electrode of the TFT is connected to the data line SigN, and the gate electrode thereof is connected to the gate line VgN. In this example, the wiring necessary for driving the photoelectric conversion device is a bias line, a data line, and a gate line.

【0007】またフォトダイオードのアノード電極とT
FTのドレイン電極とは各画素で相互に接続されてい
る。この例ではバイアスラインとデータラインは垂直上
方向、ゲートラインは水平左方向に引き回され、光電変
換装置の各々一辺に引き出される。
The anode electrode of the photodiode and T
The drain electrode of the FT is connected to each other in each pixel. In this example, the bias line and the data line are routed vertically upward, and the gate line is routed horizontally leftward so as to be routed to one side of each photoelectric conversion device.

【0008】更に、バイアスラインとデータラインとは
電気回路基板である読み出し装置1に、またゲートライ
ンはもう一方の電気回路基板であるゲート駆動装置2に
接続される。
Further, the bias line and the data line are connected to the reading device 1 which is an electric circuit board, and the gate line is connected to the gate driving device 2 which is the other electric circuit board.

【0009】電気回路基板である読み出し装置1は、配
線パターンで形成されたPCB(Print Circuit Boar
d)上に、光電変換素子を駆動させる為の各種電位等を
作る電源回路、その電源を制御する為の制御回路、光電
変換素子からの信号を受取る信号処理回路等が備わって
おり、上部を鉛等の重金属からなる放射線遮蔽部材5で
覆っている。制御回路は、半導体素子からなる各種アン
プIC、各種ロジックIC、レギュレータIC等の電子
部品21からなる。
The reading device 1 which is an electric circuit board has a printed circuit board (PCB) formed by a wiring pattern.
d) Above, a power supply circuit that creates various potentials for driving the photoelectric conversion element, a control circuit for controlling the power supply, a signal processing circuit that receives a signal from the photoelectric conversion element, and the like are provided. It is covered with a radiation shielding member 5 made of a heavy metal such as lead. The control circuit includes electronic parts 21 such as various amplifier ICs, various logic ICs, regulator ICs, etc., which are semiconductor elements.

【0010】また、もう一方の電気回路基板であるゲー
ト駆動装置2は読出し装置1と同様に、PCB上に信号
転送素子を駆動させる為の各種回路を備え、PCB上に
回路を構成する為の半導体素子からなる各種IC等の電
子部品22が搭載されている。そして、上部を放射線遮
蔽部材5で覆っている。光電変換装置と各々の電気回路
基板は、フレキシブル配線板等の配線部材101,10
2によってそれぞれ接続されている。
Further, the gate drive device 2 which is the other electric circuit board is provided with various circuits for driving the signal transfer element on the PCB, similarly to the readout device 1, and the circuit is constructed on the PCB. Electronic components 22 such as various ICs made of semiconductor elements are mounted. Then, the upper part is covered with the radiation shielding member 5. The photoelectric conversion device and each of the electric circuit boards include wiring members 101, 10 such as flexible wiring boards.
2 are connected to each other.

【0011】光電変換装置3の上には画素領域を覆うよ
うに、X線を可視光に変換するための蛍光板からなる放
射線可視光変換装置4が配置されている。
On the photoelectric conversion device 3, a radiation-visible light conversion device 4 composed of a fluorescent plate for converting X-rays into visible light is arranged so as to cover the pixel region.

【0012】蛍光板へ入射したX線は、可視光に変換さ
れ、変換された可視光は光電変換装置3の光電変換素子
に入射し電気信号として蓄積され光電変換される。光電
変換された信号は、信号転送素子によって読出し装置1
に読み出され、さらに信号処理回路等により処理されX
線画像データを得ることができる。
The X-rays incident on the fluorescent plate are converted into visible light, and the converted visible light is incident on the photoelectric conversion element of the photoelectric conversion device 3 and is accumulated as an electric signal and photoelectrically converted. The photoelectrically converted signal is read by the signal transfer element 1
Read out, and further processed by a signal processing circuit etc. X
Line image data can be obtained.

【0013】[0013]

【発明が解決しようとする課題】しかし、従来の技術
は、鉛等の重金属からなる放射線遮網部材を備えてお
り、これが放射線検出装置の軽量化を妨げていた。特
に、読み出し装置等が光電変換装置の周囲を覆うように
形成されている放射線検出装置では、放射線遮蔽部材を
それだけ多く設けなければならないので、その重さに耐
えられるだけの丈夫な支持部材を設ける等の必要が生じ
コストを低くおさえるのも困難であった。また、放射線
検出装置が重いと、運搬等の移動時の取扱いが困難とな
るので、装置の軽量化が望まれている。
However, the conventional technique has a radiation shielding member made of a heavy metal such as lead, which hinders the weight reduction of the radiation detecting device. Particularly, in a radiation detection device in which the reading device and the like are formed so as to cover the periphery of the photoelectric conversion device, it is necessary to provide as many radiation shielding members as possible, so a strong supporting member that can withstand the weight thereof is provided. However, it was difficult to keep the cost low. Further, when the radiation detection device is heavy, it becomes difficult to handle it during transportation or the like. Therefore, it is desired to reduce the weight of the device.

【0014】そこで、本発明は、放射線検出装置の軽量
化を図ることを課題とする。
Therefore, an object of the present invention is to reduce the weight of the radiation detecting apparatus.

【0015】[0015]

【課題を解決するための手段】上記課題を解決するた
め、本発明は、放射線に基づく光を電荷に変換する画素
領域と、前記画素領域で変換された電荷を処理する処理
領域とを備えた放射線検出装置において、前記画素領域
の一方の辺に沿って前記処理領域を配置し、前記処理領
域の上部に放射線を遮蔽する遮蔽材を設けていることを
特徴とする。
In order to solve the above-mentioned problems, the present invention comprises a pixel region for converting light based on radiation into electric charges, and a processing region for processing the electric charges converted in the pixel regions. In the radiation detection apparatus, the processing region is arranged along one side of the pixel region, and a shielding material that shields radiation is provided above the processing region.

【0016】また、本発明は、放射線に基づく光を電荷
に変換する光電変換素子と、前記光電変換素子で変換さ
れた電荷の読み出しを制御する制御素子とが画素領域に
平面上に配列された放射線検出装置において、前記画素
領域の一方の辺に沿って、前記制御素子を駆動する駆動
回路を有する基板と、前記制御素子によって読み出され
た電荷を処理する処理回路を有する基板とを、前記光の
入射方向に対して重ねて配置し、上側の基板の上部に前
記駆動回路及び前記処理回路への放射線を遮蔽する遮蔽
材を設けていることを特徴とする。
Further, according to the present invention, a photoelectric conversion element for converting light based on radiation into an electric charge and a control element for controlling readout of the electric charge converted by the photoelectric conversion element are arranged in a plane on a pixel region. In the radiation detection device, a substrate having a drive circuit for driving the control element and a substrate having a processing circuit for processing the charges read by the control element are provided along one side of the pixel region, It is characterized in that it is arranged so as to overlap with the incident direction of light, and a shielding material for shielding the radiation to the drive circuit and the processing circuit is provided on the upper substrate.

【0017】さらに、本発明の放射線検出システムは、
上記いずれかの放射線検出装置を備えることを特徴とす
る。
Furthermore, the radiation detection system of the present invention comprises:
It is characterized by comprising any one of the radiation detecting devices described above.

【0018】[0018]

【発明の実施の形態】以下、本発明の実施形態について
図面を用いて説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【0019】(実施形態1)図1(A),図1(B)は
本発明の実施形態1の放射線検出装置の概略の構成図で
あり、図1(A)は模式的平面図、図1(B)は図1
(A)のA−A’の模式的断面図である。
(Embodiment 1) FIGS. 1 (A) and 1 (B) are schematic configuration diagrams of a radiation detecting apparatus according to Embodiment 1 of the present invention. FIG. 1 (A) is a schematic plan view and a drawing. Figure 1 (B) is
It is a schematic sectional drawing of AA 'of (A).

【0020】電気回路基板である読み出し装置1は、配
線パターンで形成されたPCB(Print Circuit Boar
d)上に、光電変換素子を駆動させる為の各種電位等を
作る電源回路、その電源を制御する為の制御回路、光電
変換素子からの信号を受取る信号処理回路等が備わって
おり、上部を鉛等の重金属からなる放射線遮蔽部材5で
覆っている。制御回路は、半導体素子からなる各種アン
プIC、各種ロジックIC、レギュレータIC等の電子
部品21からなる。
The reading device 1, which is an electric circuit board, has a printed circuit board (PCB) formed of a wiring pattern.
d) Above, a power supply circuit that creates various potentials for driving the photoelectric conversion element, a control circuit for controlling the power supply, a signal processing circuit that receives a signal from the photoelectric conversion element, and the like are provided. It is covered with a radiation shielding member 5 made of a heavy metal such as lead. The control circuit includes electronic parts 21 such as various amplifier ICs, various logic ICs, regulator ICs, etc., which are semiconductor elements.

【0021】また、もう一方の電気回路基板であるゲー
ト駆動装置2は読出し装置1と同様に、PCB上に信号
転送素子を駆動させる為の各種回路を備え、PCB上に
回路を構成する為の半導体素子からなる各種IC等の電
子部品22が搭載されている。そして、上部を放射線遮
蔽部材5で覆っている。光電変換装置3と各々の読み出
し装置1は、フレキシブル配線板等の配線部材101に
よって接続されている。また、光電変換装置3とゲート
駆動装置2は、配線部材202によって接続されてい
る。
The gate drive device 2, which is the other electric circuit board, is provided with various circuits for driving the signal transfer elements on the PCB, similarly to the readout device 1, and the circuit is constructed on the PCB. Electronic components 22 such as various ICs made of semiconductor elements are mounted. Then, the upper part is covered with the radiation shielding member 5. The photoelectric conversion device 3 and each reading device 1 are connected by a wiring member 101 such as a flexible wiring board. The photoelectric conversion device 3 and the gate drive device 2 are connected by a wiring member 202.

【0022】光電変換装置3の上には画素領域を覆うよ
うに、X線を可視光に変換するための蛍光板からなる放
射線可視光変換装置4が配置されている。
On the photoelectric conversion device 3, a radiation visible light conversion device 4 composed of a fluorescent plate for converting X-rays into visible light is arranged so as to cover the pixel region.

【0023】蛍光板へ入射したX線は、可視光に変換さ
れ、変換された可視光は光電変換装置3の光電変換素子
に入射し電気信号として蓄積され光電変換される。光電
変換された信号は、信号転送素子によって読出し装置1
に読み出され、さらに信号処理回路等により処理されX
線画像データを得ることができる。
The X-rays incident on the fluorescent plate are converted into visible light, and the converted visible light is incident on the photoelectric conversion element of the photoelectric conversion device 3 and is accumulated as an electric signal and photoelectrically converted. The photoelectrically converted signal is read by the signal transfer element 1
Read out, and further processed by a signal processing circuit etc. X
Line image data can be obtained.

【0024】本実施形態では、ゲート駆動装置2を、光
電変換装置3のバイアスライン及びデータラインが引き
出される辺、即ち、読み出し装置1と平面的に同一辺側
に配置している。更に、読み出し装置1とゲート駆動装
置2の2つの電気回路基板は、重なるよう配置されてい
る。
In the present embodiment, the gate driving device 2 is arranged on the side where the bias line and the data line of the photoelectric conversion device 3 are drawn out, that is, on the same side as the reading device 1 in plan view. Further, the two electric circuit boards of the reading device 1 and the gate driving device 2 are arranged so as to overlap each other.

【0025】放射線遮蔽部材5は、読み出し装置1とゲ
ート駆動装置2の2つの電気回路基板上のX線入射方向
に設けられており、2つの電気回路基板のX線爆射を抑
制している。こうして、広範囲に放射線遮蔽部材を配置
することなく半導体素子からなる電子部品21,22の
X線爆射を抑制している。
The radiation shielding member 5 is provided in the X-ray incident direction on the two electric circuit boards of the reading device 1 and the gate driving device 2, and suppresses the X-ray exposure of the two electric circuit boards. . Thus, the X-ray exposure of the electronic components 21 and 22 made of semiconductor elements is suppressed without disposing the radiation shielding member in a wide range.

【0026】また、図4に示すように、光電変換装置3
と読み出し装置1とを接続する配線部材101と光電変
換装置3の同一辺に配線部材102を配置し、光電変換
装置3の平面的に同一辺に配線部材101及び102を
配置している。
Further, as shown in FIG. 4, the photoelectric conversion device 3
The wiring member 101 for connecting the reading device 1 and the wiring member 102 is arranged on the same side of the photoelectric conversion device 3, and the wiring members 101 and 102 are arranged on the same side of the photoelectric conversion device 3 in plan view.

【0027】すなわち、接続線である配線部材を光電変
換装置3の画素領域の一方の辺を横切るように配置して
いる。
That is, the wiring member, which is a connection line, is arranged so as to cross one side of the pixel region of the photoelectric conversion device 3.

【0028】配線部材202に代えて配線部材102を
用いてゲート駆動装置2と光電変換装置3とを接続する
と、引き回し長さが縮小でき、より低コストの配線部材
で作製でき、且つ放射線検出装置を小型化できる。
When the wiring member 102 is used instead of the wiring member 202 to connect the gate driving device 2 and the photoelectric conversion device 3, the wiring length can be reduced, and the wiring member can be manufactured at a lower cost, and the radiation detecting device can be manufactured. Can be downsized.

【0029】(実施形態2)図2(A),図2(B)は
本発明の実施形態2の放射線検出装置の概略の構成図で
あり、図2(A)は模式的平面図、図2(B)は図2
(A)のA−A’の模式的断面図である。なお、図2に
おいて、図1と同様の部分には同一符号を付している。
(Embodiment 2) FIGS. 2A and 2B are schematic configuration diagrams of a radiation detecting apparatus according to Embodiment 2 of the present invention. FIG. 2A is a schematic plan view and a drawing. 2 (B) is Figure 2
It is a schematic sectional drawing of AA 'of (A). In FIG. 2, the same parts as those in FIG. 1 are designated by the same reference numerals.

【0030】図2に示すように、本実施形態では、放射
線遮蔽部材5は、各電気回路基板1,2上の電子部品2
1,22の上部にのみ部分的に配置されているので、放
射線遮蔽部材5を配置する領域が更に小さくなる。
As shown in FIG. 2, in the present embodiment, the radiation shield member 5 includes the electronic component 2 on each of the electric circuit boards 1 and 2.
Since the radiation shielding member 5 is partially disposed only on the upper portions of the first and second portions 22, the area where the radiation shielding member 5 is disposed is further reduced.

【0031】なお、図2では、電子部品21,22を近
い位置に設け、その周囲上部に放射線遮蔽部材5を3箇
所設ける様子を図示しているが、無論、電子部品21,
22の各々の上部にのみ放射線遮蔽部材5を配置しても
よい。
In FIG. 2, the electronic components 21 and 22 are provided at close positions, and the radiation shielding member 5 is provided at three positions above the periphery of the electronic components 21 and 22.
The radiation shielding member 5 may be arranged only on the top of each of the 22.

【0032】また、特に図示していないが、図4におい
ても同様に放射線遮蔽部材5を配置でき、同様の効果が
得られる。
Although not particularly shown, the radiation shielding member 5 can be similarly arranged in FIG. 4 and the same effect can be obtained.

【0033】(実施形態3)図3(A),図3(B)は
本発明の実施形態3の放射線検出装置の概略の構成図で
あり、図3(A)は模式的平面図、図3(B)は図3
(A)のA−A’の模式的断面図である。なお、図3に
おいて、図1と同様の部分には同一符号を付している。
(Embodiment 3) FIGS. 3 (A) and 3 (B) are schematic configuration diagrams of a radiation detecting apparatus according to Embodiment 3 of the present invention. FIG. 3 (A) is a schematic plan view and a drawing. Figure 3 (B) is
It is a schematic sectional drawing of AA 'of (A). In FIG. 3, the same parts as those in FIG. 1 are designated by the same reference numerals.

【0034】図3において、9は読み出し及びゲート駆
動装置であり、同一電気回路基板上に電子部品21,2
2が例えばそれぞれ表裏に搭載されている。また、読み
出し及びゲート駆動装置9と光電変換装置3のバイアス
ライン及びデータラインは、配線部材101によって接
続されている。また、ゲートラインは、配線部材202
によって接続されている。
In FIG. 3, reference numeral 9 is a reading and gate driving device, and electronic components 21 and 2 are provided on the same electric circuit board.
2 are mounted on the front and back, respectively. Further, the reading and gate driving device 9 and the bias line and data line of the photoelectric conversion device 3 are connected by a wiring member 101. The gate line is the wiring member 202.
Connected by.

【0035】さらに、読み出し及びゲート駆動装置9の
X線入射方向上には、放射線遮蔽部材5が電子部品2
1,22を覆うように部分的に配置されている。このた
め、部材や工数の低減により、低コスト化が図れる。
Further, the radiation shielding member 5 is provided on the electronic component 2 in the X-ray incident direction of the reading and gate driving device 9.
It is partially arranged so as to cover 1, 22. Therefore, the cost can be reduced by reducing the number of members and man-hours.

【0036】なお、電子部品21,22の搭載位置は、
図3に示すものに限定するものではなく、たとえば表裏
逆の搭載や、同一面上の混載も可能である。
The mounting positions of the electronic components 21 and 22 are as follows.
The present invention is not limited to the one shown in FIG.

【0037】また、図5に示すように、図4と同様に、
光電変換装置3と読み出し装置1とを接続する配線部材
101と光電変換装置3の同一辺に配線部材102を配
置し、光電変換装置3の平面的に同一辺に配線部材10
1及び102を配置するような構成もできる。
Further, as shown in FIG. 5, as in FIG.
The wiring member 102 that connects the photoelectric conversion device 3 and the reading device 1 and the wiring member 102 are arranged on the same side of the photoelectric conversion device 3, and the wiring member 10 is arranged on the same side of the photoelectric conversion device 3 in plan view.
A configuration in which 1 and 102 are arranged is also possible.

【0038】すなわち、接続線である配線部材101,
102を光電変換装置3の画素領域の一方の辺を横切る
ように配置している。
That is, the wiring member 101, which is a connection line,
102 is arranged so as to cross one side of the pixel region of the photoelectric conversion device 3.

【0039】配線部材202に代えて配線部材102を
用いてゲート駆動装置2と光電変換装置3とを接続する
と、更に引き回し長さが縮小でき、より低コストの配線
部材で作製でき、且つ放射線検出装置を小型化できる。
When the wiring member 102 is used instead of the wiring member 202 to connect the gate driving device 2 and the photoelectric conversion device 3, the wiring length can be further reduced, and the wiring member can be manufactured at a lower cost, and radiation detection can be performed. The device can be downsized.

【0040】(実施形態4)図6(A)〜図6(C)は
本発明の実施形態4の放射線検出装置の概略の構成図で
あり、図6(A)は模式的平面図、図6(B)は図6
(A)のA−A’の模式的断面図である。図6(B)は
図6(A)のA−A’の模式的断面図である。なお、図
6において、図1と同様の部分には同一符号を付してい
る。
(Embodiment 4) FIGS. 6 (A) to 6 (C) are schematic configuration diagrams of a radiation detecting apparatus according to Embodiment 4 of the present invention, and FIG. 6 (A) is a schematic plan view, FIG. 6 (B) is shown in FIG.
It is a schematic sectional drawing of AA 'of (A). FIG. 6B is a schematic cross-sectional view taken along the line AA ′ of FIG. In FIG. 6, the same parts as those in FIG. 1 are designated by the same reference numerals.

【0041】本実施形態では、図3等を用いて説明した
ように、電子部品21,22を同一電気回路基板上に搭
載し、読出し及びゲート駆動装置9と光電変換装置3と
を接続するための配線部材111,112を、光電変換
装置3の画素領域の一方の辺を横切るように配置してい
る。
In the present embodiment, as described with reference to FIG. 3 and the like, in order to mount the electronic components 21 and 22 on the same electric circuit board and connect the reading and gate driving device 9 and the photoelectric conversion device 3 to each other. The wiring members 111 and 112 are arranged so as to cross one side of the pixel region of the photoelectric conversion device 3.

【0042】さらに、本実施例においては、読み出し及
びゲート駆動装置9と光電変換装置3のバイアスライン
及びデータラインを接続する配線部材(電子部品搭載配
線部材111,112)にも電子部品21,22を搭載
し、電気回路基板並びに配線部材上の電子部品が重なる
ように配置されている。
Further, in this embodiment, the electronic components 21 and 22 are also used as wiring members (electronic component mounting wiring members 111 and 112) for connecting the read / gate driving device 9 and the bias lines and data lines of the photoelectric conversion device 3. Is mounted, and the electronic circuit board and the electronic components on the wiring member are arranged so as to overlap each other.

【0043】こうして、読み出し及びゲート駆動装置9
を小型化し且つ、放射線遮蔽部材5を更に縮小でき、更
なる軽量化を図ることができる。
Thus, the reading and gate driving device 9
And the radiation shielding member 5 can be further reduced in size, and the weight can be further reduced.

【0044】(実施形態5)図7は、本発明の実施形態
5の放射線診断システムの模式的な構成図である。X線
チューブ6050で発生したX線6060は患者あるい
は被験者6061の胸部6062を透過し、実施形態1
から4で説明した放射線検出装置(イメージセンサ)6
040に入射する。この入射したX線には患者6061
の体内部の情報が含まれている。X線の入射に対応して
蛍光体は発光し、これを光電変換して電気的情報を得
る。この情報は、ディジタルに変換されイメージプロセ
ッサ6070により画像処理され制御室のディスプレイ
6080で観察できる。
(Fifth Embodiment) FIG. 7 is a schematic configuration diagram of a radiation diagnostic system according to a fifth embodiment of the present invention. The X-ray 6060 generated by the X-ray tube 6050 passes through the chest 6062 of the patient or the subject 6061, and
Radiation detector (image sensor) 6 described in 4 to 4
It is incident on 040. This incident X-ray has a patient 6061
Contains information about the inside of the body. The phosphor emits light in response to the incidence of X-rays and photoelectrically converts this to obtain electrical information. This information is converted to digital, image processed by the image processor 6070 and viewed on the display 6080 in the control room.

【0045】また、この情報は電話回線6090等の伝
送手段により遠隔地へ転送でき、別の場所のドクタール
ームなどディスプレイ6081に表示もしくは光ディス
ク等の保存手段に保存することができ、遠隔地の医師が
診断することも可能である。またフィルムプロセッサ6
100によりフィルム6110に記録することもでき
る。
Further, this information can be transferred to a remote place by a transmission means such as a telephone line 6090, can be displayed on a display 6081 such as a doctor room in another place, or can be stored in a storage means such as an optical disc. It is also possible to diagnose. Also the film processor 6
It is also possible to record by 100 on the film 6110.

【0046】なお、本実施形態では、光電変換装置を、
X線診断システムへ適用する場合について説明したが、
X線以外のα線、β線、γ線等を用いた非破壊検査装置
などの放射線撮像システムにも適用することができる。
In this embodiment, the photoelectric conversion device is
I explained the case of applying it to the X-ray diagnostic system.
It can also be applied to a radiation imaging system such as a nondestructive inspection apparatus using α rays, β rays, γ rays, etc. other than X rays.

【0047】[0047]

【発明の効果】以上説明したように、本発明によれば、
広範囲に放射線遮蔽部材を配置することなく半導体素子
からなる電子部品のX線爆射を抑制することができ、安
定した高画質且つ信頼性の高い、軽量な放射線検出装置
を得ることができる。
As described above, according to the present invention,
It is possible to suppress X-ray exposure of electronic components made of semiconductor elements without disposing a radiation shielding member in a wide range, and to obtain a stable, high image quality, highly reliable, and lightweight radiation detection device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施形態1の放射線検出装置の模式的
構成図である。
FIG. 1 is a schematic configuration diagram of a radiation detection apparatus according to a first exemplary embodiment of the present invention.

【図2】本発明の実施形態2の放射線検出装置の模式的
構成図である。
FIG. 2 is a schematic configuration diagram of a radiation detecting apparatus according to a second embodiment of the present invention.

【図3】本発明の実施形態3の放射線検出装置の模式的
構成図である。
FIG. 3 is a schematic configuration diagram of a radiation detecting apparatus according to a third embodiment of the present invention.

【図4】本発明の実施形態1の放射線検出装置の模式的
構成図である。
FIG. 4 is a schematic configuration diagram of a radiation detection apparatus according to the first exemplary embodiment of the present invention.

【図5】本発明の実施形態3の放射線検出装置の模式的
構成図である。
FIG. 5 is a schematic configuration diagram of a radiation detecting apparatus according to a third embodiment of the present invention.

【図6】本発明の実施形態4の放射線検出装置の模式的
構成図である。
FIG. 6 is a schematic configuration diagram of a radiation detecting apparatus according to a fourth embodiment of the present invention.

【図7】本発明の実施形態5の放射線検出システムの模
式的構成図である。
FIG. 7 is a schematic configuration diagram of a radiation detection system according to a fifth embodiment of the present invention.

【図8】従来技術の模式的回路図である。FIG. 8 is a schematic circuit diagram of a conventional technique.

【図9】従来技術の模式的構成図である。FIG. 9 is a schematic configuration diagram of a conventional technique.

【符号の説明】[Explanation of symbols]

1 読み出し装置(電気回路基板) 2 ゲート駆動装置(電気回路基板) 3 光電変換装置 4 放射線可視光変換装置 5 放射線遮蔽部材 9 読み出し及びゲート駆動装置(電気回路基板) 21,22 半導体からなる電子部品 101,102,202 配線部材 1 Readout device (electrical circuit board) 2 Gate drive device (electrical circuit board) 3 Photoelectric conversion device 4 Radiation visible light converter 5 Radiation shielding member 9 Readout and gate driver (electrical circuit board) 21,22 Electronic parts made of semiconductors 101, 102, 202 wiring members

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2G088 EE01 EE29 FF02 GG19 JJ05 JJ09 JJ29 4M118 AA10 AB01 BA04 BA05 CA02 CA11 CB06 CB11 FB03 FB09 GA10 GB01 GB11 GB20 HA21 HA22 HA26 5F088 BA15 BB03 BB07 EA04 EA06 EA20 HA10 HA15 KA08 LA08   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 2G088 EE01 EE29 FF02 GG19 JJ05                       JJ09 JJ29                 4M118 AA10 AB01 BA04 BA05 CA02                       CA11 CB06 CB11 FB03 FB09                       GA10 GB01 GB11 GB20 HA21                       HA22 HA26                 5F088 BA15 BB03 BB07 EA04 EA06                       EA20 HA10 HA15 KA08 LA08

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 放射線に基づく光を電荷に変換する画素
領域と、前記画素領域で変換された電荷を処理する処理
領域とを備えた放射線検出装置において、 前記画素領域の一方の辺に沿って前記処理領域を配置
し、前記処理領域の上部に放射線を遮蔽する遮蔽材を設
けていることを特徴とする放射線検出装置。
1. A radiation detection apparatus comprising: a pixel region that converts light based on radiation into an electric charge; and a processing region that processes the electric charge converted in the pixel region. A radiation detecting apparatus, wherein the processing region is arranged, and a shielding material that shields radiation is provided above the processing region.
【請求項2】 放射線に基づく光を電荷に変換する光電
変換素子と、前記光電変換素子で変換された電荷の読み
出しを制御する制御素子とが画素領域に平面上に配列さ
れた放射線検出装置において、 前記画素領域の一方の辺に沿って、前記制御素子を駆動
する駆動回路を有する基板と、前記制御素子によって読
み出された電荷を処理する処理回路を有する基板とを、
前記光の入射方向に対して重ねて配置し、上側の基板の
上部に前記駆動回路及び前記処理回路への放射線を遮蔽
する遮蔽材を設けていることを特徴とする放射線検出装
置。
2. A radiation detecting apparatus in which a photoelectric conversion element for converting light based on radiation into an electric charge and a control element for controlling readout of the electric charge converted by the photoelectric conversion element are arranged in a pixel region on a plane. A substrate having a drive circuit for driving the control element along one side of the pixel region, and a substrate having a processing circuit for processing charges read by the control element,
A radiation detecting apparatus, wherein the radiation detecting apparatus is disposed so as to be overlapped with respect to the light incident direction, and a shielding material that shields radiation to the driving circuit and the processing circuit is provided on an upper substrate.
【請求項3】 前記遮蔽材は、前記駆動回路及び前記処
理回路のそれぞれの位置に合わせて設けていることを特
徴とする請求項2記載の放射線検出装置。
3. The radiation detecting apparatus according to claim 2, wherein the shielding material is provided in accordance with respective positions of the drive circuit and the processing circuit.
【請求項4】 前記駆動回路及び前記処理回路は、前記
光の入射方向に対して重なる位置にあることを特徴とす
る請求項2又は3記載の放射線検出装置。
4. The radiation detection apparatus according to claim 2, wherein the drive circuit and the processing circuit are located at positions overlapping with each other in the incident direction of the light.
【請求項5】 前記駆動回路及び前記処理回路と前記制
御素子とを接続する接続線を、前記画素領域の一方の辺
を横切るように配線していることを特徴とする請求項2
から4のいずれか1項記載の放射線検出装置。
5. The connection line connecting the drive circuit and the processing circuit to the control element is wired so as to cross one side of the pixel region.
5. The radiation detection device according to any one of 4 to 4.
【請求項6】 前記駆動回路及び前記処理回路の一部
を、前記接続線にも搭載していることを特徴とする請求
項5記載の放射線検出装置。
6. The radiation detecting apparatus according to claim 5, wherein a part of the drive circuit and the processing circuit is also mounted on the connection line.
【請求項7】 請求項1から6のいずれか1項記載の放
射線検出装置を備えることを特徴とする放射線検出シス
テム。
7. A radiation detection system comprising the radiation detection apparatus according to claim 1. Description:
JP2001194951A 2001-06-27 2001-06-27 Radiation detection apparatus and system Expired - Fee Related JP4408593B2 (en)

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Country Link
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040079A1 (en) * 2009-09-29 2011-04-07 富士フイルム株式会社 Radiation image pickup device
US8592774B2 (en) 2009-06-05 2013-11-26 Canon Kabushiki Kaisha Radiographic apparatus
JP2015521283A (en) * 2012-05-07 2015-07-27 コーニンクレッカ フィリップス エヌ ヴェ Multi-layer horizontal computed tomography (CT) detector array having at least one thin photosensor disposed between at least two scintillator array layers
KR101914133B1 (en) * 2017-11-15 2018-11-01 (주)피코팩 Manufacturing method of X-ray detector
KR101914132B1 (en) * 2017-11-15 2018-11-01 (주)피코팩 X-ray detector and Manufacturing method thereof
WO2019187922A1 (en) * 2018-03-26 2019-10-03 富士フイルム株式会社 Radiation image capturing device
WO2024080346A1 (en) * 2022-10-14 2024-04-18 キヤノン株式会社 Radiography device and radiography system

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8592774B2 (en) 2009-06-05 2013-11-26 Canon Kabushiki Kaisha Radiographic apparatus
US8969820B2 (en) 2009-06-05 2015-03-03 Canon Kabushiki Kaisha Radiographic apparatus
WO2011040079A1 (en) * 2009-09-29 2011-04-07 富士フイルム株式会社 Radiation image pickup device
JP2011075327A (en) * 2009-09-29 2011-04-14 Fujifilm Corp Radiation image pickup device
JP2015521283A (en) * 2012-05-07 2015-07-27 コーニンクレッカ フィリップス エヌ ヴェ Multi-layer horizontal computed tomography (CT) detector array having at least one thin photosensor disposed between at least two scintillator array layers
KR101914133B1 (en) * 2017-11-15 2018-11-01 (주)피코팩 Manufacturing method of X-ray detector
KR101914132B1 (en) * 2017-11-15 2018-11-01 (주)피코팩 X-ray detector and Manufacturing method thereof
WO2019187922A1 (en) * 2018-03-26 2019-10-03 富士フイルム株式会社 Radiation image capturing device
JPWO2019187922A1 (en) * 2018-03-26 2020-12-03 富士フイルム株式会社 Radiation imaging device
WO2024080346A1 (en) * 2022-10-14 2024-04-18 キヤノン株式会社 Radiography device and radiography system

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