JP2011075327A - Radiation image pickup device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a radiation pickup device capable of stably acquiring radiation images which can be curved by photographing. <P>SOLUTION: A flexible insulating substrate 1 is provided with pixels 20 in a matrix form and is provided via an insulating film with both of a plurality of scanning wires 101, through which a control signal for switching a TFT switch 4 of each pixel 20 flow and a plurality of signal wires 3, through which electrical signals flow, according to an electric charge accumulated in the pixels according to the switching state of each TFT switch 4. The insulating substrate 1 is provided with both a gate IC 104 for outputting control signals and an amplifier IC 105 for detecting electrical signals flowing through the signal wires. A control circuit 120 for controlling the operation of the gate IC 104 and the amplifier IC 105 is provided on one side, or on two opposing sides of the insulating substrate 1 in the radiation image pickup device. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a radiation imaging apparatus, and more particularly to a radiation imaging apparatus that captures an image indicated by irradiated radiation.

  In recent years, a radiographic apparatus using a radiation imaging device such as an FPD (flat panel detector) that can arrange an X-ray sensitive layer on a TFT (Thin film transistor) active matrix substrate and convert X-ray information directly into digital data has been put into practical use. It has become. This radiation imaging device has an advantage that an image can be confirmed instantly and a moving image can be confirmed as compared with a conventional imaging plate, and is rapidly spreading.

  By the way, as radiation imaging elements are made thinner and lighter, it is finally required to realize a sheet shape that can be curved.

  Patent Document 1 discloses a technique for forming a scanning wiring driving circuit and a signal line driving circuit for driving a TFT in a flexible display substrate in an active matrix organic EL display (organic electroluminescence display). Yes.

JP 2000-298198 A

  However, when a scanning wiring driving circuit or a signal line driving circuit is formed in the substrate of the radiation imaging element having flexibility, the scanning wiring driving circuit or the signal line driving circuit is poor in yield, and scanning is performed when the scanning is curved. There is a problem in that a radiation image cannot be stably taken because the wiring in the wiring drive circuit and the signal line drive circuit is likely to be disconnected. For example, since the scanning wiring drive circuit can be composed of a shift register having a relatively small circuit scale, even if it is a poly-Si (polysilicon) TFT technology or an a-Si (amorphous silicon) TFT having a low mobility, a TFT array. Techniques for forming on a substrate have been proposed. However, compared to MOS transistors on a silicon substrate, poly-Si TFTs and a-Si TFTs formed by TFT manufacturing apparatuses have low mobility and a large minimum line width, so that a large area is required to realize a drive circuit. To do. The mobility and minimum line width of MOS transistors on silicon are 600cm2 / V · s and 0.1-0.5um, while 10-30cm2 / V · s and 3-5um for poly-Si TFTs and a-Si TFTs. 0.5cm2 / V · s, 4-6um. For this reason, the poly-Si TFT requires an area approximately 300 times that of the MOS transistor, and the a-Si TFT requires 12,000 times the area. Specifically, the area is about 100 μm × 1000 μm per gate line. Therefore, when it is applied to a flexible substrate, there is a problem that the yield drop due to disconnection is remarkable, and the TFT array cannot be manufactured stably, or the radiation image cannot be stably captured.

  In view of the above-described circumstances, an object of the present invention is to provide a radiation imaging apparatus that can bend and stably capture a radiation image.

  In order to achieve the above object, the radiation imaging apparatus according to the first aspect of the present invention has at least one side or two opposite sides on the outer edge in one direction in plan view, and each is irradiated with radiation to be detected. A plurality of pixels each having a switch element for accumulating the charges generated and reading the charges, and a plurality of scanning wirings through which a control signal for switching each switch element included in each pixel flows; A flexible insulating substrate provided with a plurality of signal wirings through an insulating film through which an electric signal corresponding to the electric charge stored in the pixel flows according to the switching state of each switch element; A first integrated circuit which is provided on the insulating substrate for each of the first number of scanning wirings and outputs the control signal to the first number of scanning wirings. A second integrated circuit which is provided on the insulating substrate for each predetermined second number of the signal wirings and detects an electrical signal flowing through the second number of signal wirings, and the insulating substrate. A control circuit which is provided on one side or two opposite sides and is electrically connected to the first integrated circuit and the second integrated circuit to control operations of the first integrated circuit and the second integrated circuit; It has.

  The radiation imaging apparatus of the present invention is generated by irradiating a flexible insulating substrate having at least one side or two opposite sides at one edge in a plan view with radiations to be detected. A plurality of pixels each provided with a switch element for accumulating charges and reading the charges are provided in a matrix. On this insulating substrate, a plurality of scanning wirings through which control signals for switching each switch element provided in each pixel flow, and an electrical signal corresponding to the charge accumulated in the pixel according to the switching state of each switch element flow. A plurality of signal wirings are provided via an insulating film.

  In the present invention, a first integrated circuit that outputs a control signal to the first number of scanning wirings is provided on the insulating substrate for each predetermined number of scanning wirings. A second integrated circuit that detects an electric signal flowing through the second number of signal wirings is provided for each of the determined second number of signal wirings.

  In the present invention, the operation of the first integrated circuit and the second integrated circuit is controlled by being electrically connected to the first integrated circuit and the second integrated circuit on one side or two opposite sides of the insulating substrate. A control circuit is provided.

  As described above, according to the present invention, pixels are provided in a matrix, and a plurality of scanning wirings through which control signals for switching the switch elements of the pixels flow and charges accumulated in the pixels according to the switching states of the switch elements A first integrated circuit that outputs a control signal and an electrical signal that flows through the signal wiring are detected on a flexible insulating substrate provided with a plurality of signal wirings through which an electrical signal corresponding to the current flows via an insulating film And a control circuit for controlling the operation of the first integrated circuit and the second integrated circuit is provided on one side of the insulating substrate or on the two opposite sides, so that the control circuit is connected to the insulating substrate. Therefore, the insulating substrate can be curved. In addition, the insulating substrate does not bend at the first integrated circuit and the second integrated circuit, but is bent at a portion between the first integrated circuit and the second integrated circuit, so that the insulating substrate is bent in the first integrated circuit and the second integrated circuit. Since no disconnection occurs in the wiring, a radiation image can be stably taken.

  In the present invention, the plurality of signal wirings are provided in parallel in the one direction, the plurality of scanning wirings are provided in parallel in a crossing direction with respect to the one direction, A plurality of second wirings that are provided in parallel in one direction and are provided via the first wiring and the insulating film, and are connected to the different first wirings through contact holes formed in the insulating film. Also good.

  In the present invention, the first integrated circuit and the second integrated circuit may be provided on a peripheral portion of the one side or two opposite sides on the insulating substrate.

  According to the present invention, the control circuit includes a first control circuit that controls an operation of the first integrated circuit and a second control circuit that controls an operation of the second integrated circuit, and the first integrated circuit, The first control circuit, the second integrated circuit, and the second control circuit may be provided to face the two sides of the insulating substrate.

  In the present invention, the plurality of signal lines are provided on the insulating substrate in parallel with the one direction, and the plurality of scanning lines are provided in parallel with the direction intersecting the one direction. Is provided in the peripheral portion in the one direction on the insulating substrate, the first integrated circuit is provided in the peripheral portion in the cross direction on the insulating substrate, and the connection wiring provided on the insulating substrate or The control circuit may be connected via external wiring outside the insulating substrate.

  The radiation imaging apparatus of the present invention has an excellent effect of being able to bend and stably capture a radiation image.

It is a top view which shows the detailed structure of the radiation imaging device which concerns on 1st Embodiment. It is a top view which shows the structure of the radiography apparatus which concerns on embodiment. It is sectional drawing which shows the structure of the radiography apparatus which concerns on embodiment. It is a top view which shows the structure of the 1-pixel unit of the radiation image pick-up element which concerns on 1st Embodiment. It is line sectional drawing of the radiation image pick-up element which concerns on 1st Embodiment. It is a perspective view which shows the state which removed the radiation imaging element and control part which concern on embodiment. It is a perspective view which shows the imaging state which curved the radiation imaging device which concerns on embodiment. It is a top view which shows the detailed structure of the radiation imaging device which concerns on 2nd Embodiment. It is a top view which shows the structure of 1 pixel unit of the radiation image pick-up element which concerns on 2nd Embodiment. It is a line sectional view of a radiation image sensor concerning a 2nd embodiment. It is a top view which shows the detailed structure of the radiation imaging device which concerns on 3rd Embodiment. It is an enlarged plan view of a radiation image sensor according to a third embodiment. It is a top view which shows the detailed structure of the radiation imaging device which concerns on 4th Embodiment. It is a top view which shows the detailed structure of the radiation imaging device which concerns on another form. It is a top view which shows the structure of 1 pixel unit of the radiation image pick-up element which concerns on other embodiment. It is a sectional view of a radiation imaging element according to another embodiment.

  Hereinafter, the case where the present invention is applied to a radiation imaging apparatus 100 that captures a radiation image using radiation such as X-rays will be described with reference to the drawings.

[First Embodiment]
First, the radiation imaging element 10 used in the radiation imaging apparatus 100 according to the first embodiment will be described.

  FIG. 1 shows a detailed configuration of a radiation imaging element 10 according to the present embodiment.

  In the radiation imaging element 10, a plurality of pixels 20 are provided in a matrix in a radiographic image capturing area E on a flexible insulating substrate 1 having a flat rectangular shape. Each pixel 20 includes a sensor unit 103 that accumulates charges generated by light irradiation, and a TFT switch 4 for reading out the charges accumulated in the sensor unit 103.

  The radiation imaging element 10 includes a plurality of scanning wirings 101 for turning on / off the TFT switch 4 and a plurality of signal wirings 3 for reading out the electric charges accumulated in the sensor unit 103 on the substrate 1. Is provided.

  In the radiation imaging device 10 according to the first embodiment, the signal wiring 3 is provided in parallel in each pixel column in one direction (lateral direction in FIG. 1) in the matrix arrangement of the plurality of pixels 20 provided. Yes.

  Further, in the radiation imaging element 10 according to the first exemplary embodiment, the first wiring 101 </ b> A is provided as the scanning wiring 101 in each pixel column in the crossing direction (vertical direction in FIG. 1) with respect to one direction of the matrix arrangement of the pixels 20. A second wiring 101B is provided in parallel in each pixel column in one direction in the matrix arrangement. Each of the second wirings 101B and each of the first wirings 101A is connected to the first wirings 101A that are different from each other with respect to each of the second wirings 101B. The wiring 101A and the n-th second wiring 101B are connected.

  The radiation imaging element 10 according to the present embodiment has a scintillator 30 (see FIG. 3) made of GOS or the like attached to the surface.

  In the radiation imaging element 10, the irradiated radiation such as X-rays is converted into light by the scintillator 30 and irradiated to the sensor unit 103. The sensor unit 103 receives the light emitted from the scintillator 30 and accumulates electric charges.

  Each signal wiring 3 has an electrical signal (image signal) indicating a radiation image according to the amount of charge accumulated in the sensor unit 103 when any TFT switch 4 connected to the signal wiring 3 is turned on. Flowing.

  In the radiation imaging element 10 according to the present embodiment, an amplifier IC (Integrated Circuit) 105 is provided side by side for each predetermined first number (for example, 256) of signal wirings 3 on one end side in the signal wiring direction. Yes. Each signal wiring 3 is connected to the amplifier IC 105 for each first number. In addition, the radiation imaging element 10 according to the present exemplary embodiment has gate ICs 104 alternately with the amplifier ICs 105 for each predetermined second number (for example, 256) of scanning wirings 101 on one end side in the signal wiring direction. Is provided. Each scanning wiring 101 is connected to the amplifier IC 105 for each second number. In FIG. 1 and FIGS. 8, 11, 13, and 14 to be described later, the connection portion between the signal wiring 3 and the amplifier IC 105 and the connection portion between the scanning wiring 101 and the gate IC 104 are omitted.

  The gate IC 104 outputs a control signal for turning on / off the TFT switch 4 to each scanning wiring 101.

  The amplifier IC 105 incorporates an amplification circuit for amplifying an input electric signal for each signal wiring 3. The amplifier IC 105 detects the amount of charge accumulated in each sensor unit 103 as information of each pixel 20 constituting the image by amplifying and detecting an electric signal input from each signal wiring 3 by an amplifier circuit. .

  2 and 3 are a plan view and a side view showing the configuration of the radiation imaging element 10 according to the present embodiment and the control unit 50 that drives the radiation imaging element 10.

  The radiation imaging element 10 is provided with a male interface (I / F) connector 110 at one end in the signal wiring direction. Each gate IC 104 and each amplifier IC 105 are connected to an I / F connector 110 via an interface (I / F) circuit 112.

  On the other hand, the control unit 50 transforms the control circuit 120 for controlling the operation of each gate IC 104 and each amplifier IC 105, the battery 122, and the electric power charged in the battery 122 to predetermined voltages, respectively. And a power supply circuit 124 that supplies the radiation imaging element 10.

  The control unit 50 includes a female I / F connector 126 and an output terminal 128 in the control circuit 120, and the I / F connector 110 of the radiation imaging element 10 is connected to the I / F connector 126. The control circuit 120 is electrically connected to each gate IC 104 and each amplifier IC 105 via the I / F connector 126, the I / F connector 110, and the I / F circuit 112, and a predetermined electric signal is detected by each amplifier IC 105. Is output from the output terminal 128, and a timing signal indicating the signal detection timing is output to each amplifier IC 105, and a control signal for turning on / off the TFT switch 4 is output to each gate IC 104. A timing signal indicating the output timing is output.

  Next, the radiation imaging device 10 according to the present embodiment will be described in more detail with reference to FIGS. 4 and 5. 4 is a plan view showing the structure of one pixel unit of the radiation imaging element 10 according to the present embodiment, and FIG. 5 is a sectional view taken along line AA of FIG. Yes.

  As shown in FIG. 5, in the radiation imaging element 10, the second wiring 101 </ b> B is formed on the substrate 1. The wiring layer in which the second wiring 101B is formed (hereinafter this wiring layer is also referred to as “first signal wiring layer”) is formed using Al or Cu, or a laminated film mainly composed of Al or Cu. However, it is not limited to these. On the second wiring 101B, a first insulating film 15A is formed on one surface so as to cover the second wiring 101B.

  On the first insulating film 15A, a first wiring 101A and a gate electrode 2 are formed, and the first wiring 101A and the gate electrode 2 are connected (see FIG. 4). The wiring layer in which the first wiring 101A and the gate electrode 2 are formed (hereinafter, this wiring layer is also referred to as “second signal wiring layer”) is made of Al or Cu, or a laminated film mainly composed of Al or Cu. However, the present invention is not limited to these. In the first insulating film 15A, a contact hole 19 (see FIG. 4) is formed at a position where the n-th first wiring 101A and the n-th second wiring 101B intersect, and the n-th first wiring 101A. And the n-th second wiring 101 </ b> B are connected through the contact hole 19.

On the first wiring 101 </ b> A and the gate electrode 2, a second insulating film 15 </ b> B is formed on one surface so as to cover the first wiring 101 </ b> A and the gate electrode 2. The portion of the second insulating film 15B located on the gate electrode 2 functions as a gate insulating film in the TFT switch 4. The insulating film 15B is made of, for example, SiN _X or the like, and is formed by, for example, CVD (Chemical Vapor Deposition) film formation.

  On the gate electrode 2 on the second insulating film 15B, the semiconductor active layer 8 is formed in an island shape. The semiconductor active layer 8 is a channel portion of the TFT switch 4 and is made of, for example, an amorphous silicon film.

  A source electrode 9 and a drain electrode 13 are formed on these upper layers. In the wiring layer in which the source electrode 9 and the drain electrode 13 are formed, the signal wiring 3 is formed together with the source electrode 9 and the drain electrode 13. The source electrode 9 is connected to the signal wiring 3 (see FIG. 4). The wiring layer in which the signal wiring 3 and the source electrode 9 are formed (hereinafter, this wiring layer is also referred to as “third signal wiring layer”) is made of Al or Cu, or a laminated film mainly composed of Al or Cu. However, it is not limited to these.

  An impurity doped semiconductor layer (not shown) made of doped amorphous silicon or the like is formed between the source electrode 9 and drain electrode 13 and the semiconductor active layer 8. These constitute the TFT switch 4 for switching.

A TFT protective film layer 11 is formed on almost the entire region (substantially the entire region) of the region on the substrate 1 that covers the semiconductor active layer 8, the source electrode 9, the drain electrode 13, and the signal wiring 3. ing. The TFT protective film layer 11 is made of, for example, SiN _X or the like, and is formed by, for example, CVD film formation.

A coating type interlayer insulating film 12 is formed on the TFT protective film layer 11. This interlayer insulating film 12 is made of a photosensitive organic material having a low dielectric constant (relative dielectric constant ε _r = 2 to 4) (for example, a positive photosensitive acrylic resin: a copolymer of methacrylic acid and glycidyl methacrylate). And a base polymer mixed with a naphthoquinonediazide-based positive photosensitive agent). In the radiation imaging element 10 according to the present exemplary embodiment, the capacitance between metals disposed in the upper layer and the lower layer of the interlayer insulating film 12 is suppressed by the interlayer insulating film 12. In general, such a material also has a function as a flattening film, and has an effect of flattening a lower step. Thereby, since the shape of the semiconductor layer 6 disposed in the upper layer is flattened, it is possible to suppress a decrease in absorption efficiency due to the unevenness of the semiconductor layer 6 and an increase in leakage current. A contact hole 16 is formed in the interlayer insulating film 12 and the TFT protective film layer 11 at a position facing the drain electrode 13.

  A lower electrode 14 of the sensor unit 103 is formed on the interlayer insulating film 12 so as to cover the pixel region while filling the contact hole 16, and the lower electrode 14 is connected to the drain electrode 13 of the TFT switch 4. ing. If the semiconductor layer 6 described later is as thick as about 1 μm, the material of the lower electrode 14 is not limited as long as it has conductivity. Therefore, there is no problem if it is formed using a conductive metal such as an Al-based material or ITO (indium tin oxide).

  On the other hand, when the film thickness of the semiconductor layer 6 is thin (around 0.2 to 0.5 μm), light is not sufficiently absorbed by the semiconductor layer 6, so that an increase in leakage current due to light irradiation to the TFT switch 4 is prevented. An alloy mainly composed of a light-shielding metal or a laminated film is preferable.

A semiconductor layer 6 that functions as a photodiode is formed on the lower electrode 14. In the present embodiment, a PIN structure photodiode in which an n ⁺ layer, an i layer, and a p ⁺ layer (n ⁺ amorphous silicon, amorphous silicon, and p ⁺ amorphous silicon) are stacked is employed as the semiconductor layer 6. To n ⁺ layer 6A, i layer 6B, and p ⁺ layer 6C are sequentially stacked. The i layer 6B generates charges (pairs of free electrons and free holes) when irradiated with light. The n ⁺ layer 6A and the p ⁺ layer 6C function as contact layers, and electrically connect the lower electrode 14 and an upper electrode 7 (described later) to the i layer 6B.

  In the present embodiment, the lower electrode 14 is made larger than the semiconductor layer 6. When the semiconductor layer 6 is thin (for example, 0.5 μm or less), it is preferable to cover the TFT switch 4 with a light shielding metal for the purpose of preventing light from entering the TFT switch 4.

  Further, in this embodiment, in order to suppress light entering the TFT switch 4 due to irregular reflection of light inside the device, the distance from the channel portion of the TFT switch 4 to the end portion of the lower electrode 14 made of a light-shielding metal is 5 μm. The above is secured.

  An upper electrode 7 is formed on the semiconductor layer 6. For the upper electrode 7, for example, a material having high light transmittance such as ITO or IZO (zinc oxide indium) is used.

  A protective insulating film 17 is formed on the interlayer insulating film 12, the semiconductor layer 6, and the upper electrode 7 so as to have an opening 27 </ b> A in a part corresponding to the upper electrode 7. The protective insulating film 17 is made of, for example, SiNx, like the TFT protective film layer 11, and is formed by, for example, CVD film formation.

  On the protective insulating film 17, the common electrode wiring 25 is formed of Al or Cu, or an alloy or a laminated film mainly composed of Al or Cu. The common electrode wiring 25 has a contact pad 27 formed in the vicinity of the opening 27 </ b> A and is electrically connected to the upper electrode 7 through the opening 27 </ b> A of the protective insulating film 17.

  In the radiation imaging element 10 formed in this way, a protective film is formed on the protective insulating film 17 with an insulating material having a lower light absorption as necessary, and an adhesive having a low light absorption is adhered to the surface. The scintillator 30 (refer FIG. 3) which consists of GOS etc. is affixed using resin.

  Next, the operation principle of the radiation imaging apparatus 100 having the above structure will be described.

  As shown in FIG. 6, the radiation imaging element 10 according to the present exemplary embodiment is connected to the control unit 50 by connecting the I / F connector 110 to the I / F connector 126 of the control unit 50.

  In the radiation imaging element 10 according to the present embodiment, an external connection terminal is provided on one side. As a result, the radiation imaging apparatus 100 can easily replace the radiation imaging element 10, for example, it can be replaced with a radiation imaging element 10 having optimum sensitivity characteristics according to the subject region.

  When the radiation imaging element 10 is irradiated with X-rays, the irradiated X-rays are absorbed by the scintillator 30 and converted into visible light. X-rays may be emitted from either the front side or the back side of the radiation imaging element 10. The light converted into visible light by the scintillator 30 is applied to the semiconductor layer 6 of the sensor unit 103 arranged in a matrix on the substrate 1.

The radiation imaging element 10 is provided with the semiconductor layer 6 separately for each pixel unit. A predetermined bias voltage is applied to the semiconductor layer 6 from the upper electrode 7 through the common electrode wiring 25, and when light is irradiated, charges are generated inside. For example, in the case of a PIN structure in which the semiconductor layer 6 is laminated in the order of the n ⁺ layer, the i layer, and the p ⁺ layer from the lower layer, a negative bias voltage is applied to the upper electrode 7. When the film thickness is about 1 μm, the applied bias voltage is about −5 to −10V.

If the semiconductor layer 6 is not irradiated with light with a bias voltage applied, only a current of several pA / mm ² or less flows. On the other hand, when the semiconductor layer 6 is irradiated with light (1 μW / cm ² ) with a bias voltage applied, a bright current of about several to several tens of nA / mm ² is generated. The generated charges are collected by the lower electrode 14. The lower electrode 14 is connected to the drain electrode 13 of the TFT switch 4, and the source electrode 9 of the TFT switch 4 is connected to the signal wiring 3. At the time of image detection, a negative bias is applied to the gate electrode 2 of the TFT switch 4 and held in the off state, and the collected charges are accumulated in the lower electrode 14.

  At the time of image reading, an ON signal (+10 to 20 V) is sequentially applied to the gate electrode 2 of the TFT switch 4 through the scanning wiring 101. As a result, when the TFT switch 4 is sequentially turned on, an electric signal corresponding to the amount of charge accumulated in the lower electrode 14 flows out to the signal wiring 3. The amplifier IC 105 detects the amount of electric charge accumulated in each sensor unit 103 based on the electrical signal that has flowed out to the signal wiring 3 as information of each pixel constituting the image. Thereby, the image information which shows the image shown with the X-ray irradiated to the radiation image pick-up element 10 can be obtained.

  Incidentally, in the radiation imaging element 10 according to the present embodiment, the pixels 20 are formed in a matrix on the flexible substrate 1, and the gate IC 104 and the amplifier IC 105 are arranged on one side of the substrate 1 in one direction. It is provided in the periphery. The radiation imaging element 10 is connected to the control unit 50 at one side in one direction where the gate IC 104 and the amplifier IC 105 are provided.

  Thereby, as shown in FIG. 7, the radiation imaging device 10 according to the present exemplary embodiment also includes the gate IC 104, the amplifier IC 105, and the control unit even when the radiation imaging device 10 is curved in one direction and the subject S is captured. 50 is not curved, and no disconnection occurs in the wiring in the gate IC 104, the amplifier IC 105, and the control unit 50, so that a radiation image can be stably captured.

[Second Embodiment]
Next, a second embodiment will be described.

  FIG. 8 shows a detailed configuration of the radiation imaging element 10 according to the second exemplary embodiment. The same parts as those in the first embodiment (see FIG. 1) are denoted by the same reference numerals, and description thereof is omitted here.

  In the radiation imaging element 10 according to the second exemplary embodiment, the scanning wiring 101 is provided in parallel in each pixel column in the crossing direction (vertical direction in FIG. 8) with respect to one direction of the matrix arrangement of the pixels 20.

  Further, the radiation imaging element 10 is provided with a gate IC 104 on one end side in the signal wiring direction, and each scanning wiring 101 is connected to a peripheral portion of the substrate 1 or a wiring (not shown) provided on the back surface of the substrate 1. It is connected to the gate IC 104.

  FIG. 9 is a plan view showing the structure of one pixel unit of the radiation imaging element 10 according to the second embodiment, and FIG. 10 is a sectional view taken along line AA of FIG. Yes. The same parts as those in the first embodiment (see FIGS. 4 and 5) are denoted by the same reference numerals, and the description thereof is omitted here.

  As shown in FIG. 10, in the radiation imaging element 10 according to the second embodiment, compared with the first embodiment, the first signal wiring layer and the first insulating film 15A are not formed. The second signal wiring layer and higher layers are included.

  As in the first embodiment, the radiation imaging element 10 according to the second embodiment is provided with a male I / F connector 110 at one end in the signal wiring direction, as shown in FIGS. It has been. Each gate IC 104 and each amplifier IC 105 are connected to an I / F connector 110 via an I / F circuit 112, and the I / F connector 110 is connected to an I / F connector 126 of the control unit 50 as shown in FIG. To the control unit 50.

  As described above, since the radiation imaging element 10 according to the second embodiment is provided with the connection terminal with the outside on one side, the radiation imaging element 10 can be easily replaced.

  In addition, the radiation imaging element 10 is provided with a gate IC 104 and an amplifier IC 105 on one side of the substrate 1 and is connected to the control unit 50 on the one side, so that the radiation imaging element 10 itself is integrated as shown in FIG. Even when the subject S is photographed in a curved direction, the gate IC 104, the amplifier IC 105, and the control unit 50 are not curved, and no disconnection occurs in the wiring in the gate IC 104, the amplifier IC 105, and the control unit 50. You can take an image.

[Third Embodiment]
Next, a third embodiment will be described.

  FIG. 11 shows a detailed configuration of the radiation imaging element 10 according to the third exemplary embodiment. The same parts as those in the first embodiment (see FIG. 1) are denoted by the same reference numerals, and description thereof is omitted here.

  In the radiation imaging element 10 according to the third exemplary embodiment, scanning wirings 101 are provided in parallel in each pixel column in the crossing direction (vertical direction in FIG. 11) with respect to one direction of the matrix arrangement of the pixels 20.

  The radiation imaging element 10 is provided with a gate IC 104 on one end side in the scanning wiring direction, and each scanning wiring 101 is connected to the gate IC 104.

  As shown in FIG. 12, each gate IC 104 is connected to the farthest amplifier IC 105 via a connection wiring 130 provided in the peripheral portion of the substrate 1, and the I / O via the amplifier IC 105 and the interface circuit 112. The F connector 110 is connected. As in the first embodiment, the radiation imaging element 10 according to the third embodiment has an I / F connector 110 connected to an I / F connector 126 of the control unit 50 as shown in FIG. , Connected to the control unit 50.

  As described above, since the radiation imaging element 10 according to the third embodiment is provided with a connection terminal with the outside on one side, the radiation imaging element 10 can be easily replaced.

  The radiation imaging element 10 is provided with a gate IC 104 on one end side in the scanning wiring direction. However, the substrate 1 has flexibility, and the radiation imaging element 10 itself is curved as shown in FIG. Even when imaging is performed, since the substrate 1 between the gate ICs 104 is curved and the gate IC 104 is not curved, and no disconnection occurs in the wiring in the gate IC 104, a radiographic image can be stably captured.

[Fourth Embodiment]
Next, a fourth embodiment will be described.

  FIG. 13 shows a detailed configuration of the radiation imaging element 10 according to the fourth exemplary embodiment. The same parts as those in the first embodiment (see FIG. 1) are denoted by the same reference numerals, and description thereof is omitted here.

  In the radiation imaging element 10 according to the fourth exemplary embodiment, the scanning wiring 101 is provided in parallel in each pixel column in the crossing direction (vertical direction in FIG. 13) with respect to one direction of the matrix arrangement of the pixels 20.

  Further, the radiation imaging element 10 is provided with an amplifier IC 105 on one end side in the scanning wiring direction, and each scanning wiring 101 is connected to the amplifier IC 105.

  The amplifier IC 105 is provided outside the substrate 1 and connected to the interface circuit 112 via an external wiring 132 such as a printed wiring board, and is connected to the I / F connector 110 via the interface circuit 112. As in the first embodiment, the radiation imaging element 10 according to the fourth embodiment has an I / F connector 110 connected to an I / F connector 126 of the control unit 50 as shown in FIG. , Connected to the control unit 50.

  As described above, the radiation imaging element 10 according to the fourth embodiment is provided with a connection terminal on the one side as in the first embodiment, so that the radiation imaging element 10 can be easily replaced. Become.

  The radiation imaging element 10 is provided with a gate IC 104 on one end side in the scanning wiring direction. However, the substrate 1 has flexibility, and the radiation imaging element 10 itself is curved as shown in FIG. Even when imaging is performed, since the substrate 1 between the gate ICs 104 is curved and the gate IC 104 is not curved, and no disconnection occurs in the wiring in the gate IC 104, a radiographic image can be stably captured.

  In the first and second embodiments, the case where the gate IC 104 and the amplifier IC 105 are provided on one side of the substrate 1 has been described. However, the present invention is not limited to this, and for example, FIG. As shown, the gate IC 104 and the amplifier IC 105 may be provided on two opposite sides of the substrate 1. In FIG. 14, a gate IC 104 is provided on one side of two opposing sides, and an amplifier IC 105 is provided on the other side. The control circuit 120 may be provided on one side of the two sides and connected to the other side via an external circuit, and controls the gate control circuit 120A that controls the gate IC 104 and the amplifier IC 105 as shown in FIG. The amplifier control circuit 120B may be provided on two opposite sides.

  In the first embodiment, as shown in FIG. 5, the first wiring 101A, the second wiring 101B, and the signal wiring 3 are separately formed in the first to third signal wiring layers. The present invention is not limited to this. For example, the second wiring 101B and the signal wiring 3 may be formed in the same signal wiring layer. In the radiation imaging element 10 of the first embodiment, when the second wiring 101B shown in FIG. 5 is formed in the same third signal wiring layer as the signal wiring 3, the first signal wiring layer and the first insulating film 15A are unnecessary. It becomes. In this case, it is necessary to ensure insulation between the second wiring 101B and the signal wiring 3.

  In the first embodiment, the case where the second wiring 101B and the signal wiring 3 are formed at the end portion of the pixel column in one direction as shown in FIG. 4 has been described. However, the present invention is not limited to this. For example, the signal wiring 3 may be formed at the end portion of the pixel column in one direction, and the second wiring 101B may be formed at the center portion of the pixel column in one direction to increase the distance. Thereby, the parasitic capacitance of the signal wiring 3 can be suppressed.

  FIGS. 15 and 16 show another example of the configuration of the radiation imaging element 10 applicable to the first embodiment. 15 is a plan view showing the structure of one pixel unit of the radiation imaging element 10, and FIG. 16 is a sectional view taken along line AA of FIG. The same parts as those in the first embodiment (see FIGS. 4 and 5) are denoted by the same reference numerals, and the description thereof is omitted here.

  As shown in FIG. 16, the radiation imaging element 10 is not formed with the first signal wiring layer and the first insulating film 15 </ b> A as compared with the first embodiment, and is higher than the second signal wiring layer. Consists of layers.

  The second wiring 101B is formed on the TFT protective film layer 11, and passes through the central portion of the pixel column in one direction.

  In the TFT protective film layer 11 and the second insulating film 15B, a contact hole 19 (see FIG. 15) is formed at a position where the n-th first wiring 101A and the n-th second wiring 101B intersect with each other. The first wiring 101A and the n-th second wiring 101B are connected through the contact hole 19. If another wiring layer is formed below the wiring layer on which the gate electrode 2 is formed, problems may occur in alignment between layers, yield, etc., so the second wiring 101B is formed on the TFT protective film layer 11 You may make it do.

  In each of the above embodiments, when the present invention is applied to the radiation image sensor 10 of the indirect conversion method in which radiation is once converted into light by the scintillator 30 and the converted light is converted into electric charge by the sensor unit 103 and accumulated. However, the present invention is not limited to this. For example, the present invention is applied to a direct-conversion type radiation imaging element that directly converts radiation into charges by a sensor unit using amorphous selenium or the like and stores the charges. Also good.

  In the above embodiment, the case where the present invention is applied to the radiation imaging apparatus 100 that detects an image by detecting X-rays as radiation has been described. However, the present invention is not limited to this, for example, In addition, particle beams and other electromagnetic waves (visible light, ultraviolet rays, infrared rays) and the like may be detected as radiation.

  In addition, it is needless to say that the configuration of the radiation imaging element 10 and the configuration of the radiation imaging apparatus 100 described in the above embodiment are examples, and can be appropriately changed without departing from the gist of the present invention.

1 Substrate (insulating substrate)
3 Signal wiring 4 TFT switch (switch element)
DESCRIPTION OF SYMBOLS 10 Radiation image sensor 20 Pixel 50 Control part 100 Radiography apparatus 101 Scan wiring 101A 1st wiring 101B 2nd wiring 103 Sensor part 104 Gate IC (1st integrated circuit)
105 Amplifier IC (second integrated circuit)
120 control circuit 120A gate control circuit (first control circuit)
120B Amplifier control circuit (second control circuit)
130 Connection wiring 132 External wiring

Claims (5)

It has at least one side or two opposite sides on the outer edge in one direction in a plan view, and includes a switch element for accumulating and reading out the charges generated by irradiation with the radiation to be detected. A plurality of pixels are provided in a matrix, a plurality of scanning wirings through which control signals for switching each switch element provided in each pixel flow, and a charge stored in the pixel according to the switching state of each switch element A flexible insulating substrate provided with a plurality of signal wirings through which an electric signal flows via an insulating film;
A first integrated circuit provided on the insulating substrate for each predetermined first number of scanning wirings and outputting the control signal to each of the first number of scanning wirings;
A second integrated circuit that is provided on the insulating substrate for each predetermined second number of the signal wirings and detects an electrical signal flowing through the second number of signal wirings;
Provided on the one side or two opposite sides of the insulating substrate, and electrically connected to the first integrated circuit and the second integrated circuit to operate the first integrated circuit and the second integrated circuit. A control circuit to control;
A radiography apparatus comprising: The plurality of signal wirings are provided in parallel in the one direction,
The plurality of scanning wirings are provided in parallel with a plurality of first wirings in a crossing direction with respect to the one direction, and are provided in parallel with the one direction through the first wirings and an insulating film. The radiation imaging apparatus according to claim 1, further comprising a plurality of second wirings connected to different first wirings through contact holes formed in the first and second wirings. The radiation imaging apparatus according to claim 1, wherein the first integrated circuit and the second integrated circuit are provided in a peripheral portion of the one side or two opposite sides on the insulating substrate. The control circuit includes a first control circuit that controls the operation of the first integrated circuit and a second control circuit that controls the operation of the second integrated circuit,
The first integrated circuit, the first control circuit, the second integrated circuit, and the second control circuit are provided to face the two sides of the insulating substrate. The radiation imaging apparatus according to item 1. In the insulating substrate, the plurality of signal wirings are provided in parallel in the one direction, and the plurality of scanning wirings are provided in parallel in a direction crossing the one direction,
The second integrated circuit is provided in the unidirectional peripheral portion on the insulating substrate,
The first integrated circuit is provided in a peripheral portion of the crossing direction on the insulating substrate, and is connected to the control circuit via a connection wiring provided on the insulating substrate or an external wiring outside the insulating substrate. The radiation imaging apparatus according to claim 1, connected to the radiographic apparatus.

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