JP2003007843A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003007843A
JP2003007843A JP2001186606A JP2001186606A JP2003007843A JP 2003007843 A JP2003007843 A JP 2003007843A JP 2001186606 A JP2001186606 A JP 2001186606A JP 2001186606 A JP2001186606 A JP 2001186606A JP 2003007843 A JP2003007843 A JP 2003007843A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
epitaxial growth
layer
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2001186606A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003007843A5 (enExample
Inventor
Mitsuhiro Kameda
充弘 亀田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001186606A priority Critical patent/JP2003007843A/ja
Priority to US10/174,999 priority patent/US6552390B2/en
Publication of JP2003007843A publication Critical patent/JP2003007843A/ja
Publication of JP2003007843A5 publication Critical patent/JP2003007843A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001186606A 2001-06-20 2001-06-20 半導体装置 Abandoned JP2003007843A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001186606A JP2003007843A (ja) 2001-06-20 2001-06-20 半導体装置
US10/174,999 US6552390B2 (en) 2001-06-20 2002-06-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001186606A JP2003007843A (ja) 2001-06-20 2001-06-20 半導体装置

Publications (2)

Publication Number Publication Date
JP2003007843A true JP2003007843A (ja) 2003-01-10
JP2003007843A5 JP2003007843A5 (enExample) 2005-07-28

Family

ID=19026029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001186606A Abandoned JP2003007843A (ja) 2001-06-20 2001-06-20 半導体装置

Country Status (2)

Country Link
US (1) US6552390B2 (enExample)
JP (1) JP2003007843A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013236095A (ja) * 2013-07-08 2013-11-21 Renesas Electronics Corp 半導体装置
US8853846B2 (en) 2004-07-30 2014-10-07 Renesas Electronics Corporation Semiconductor device and a manufacturing method of the same
WO2015072295A1 (ja) * 2013-11-12 2015-05-21 日立オートモティブシステムズ株式会社 半導体装置
US9165922B2 (en) 2013-03-22 2015-10-20 Kabushiki Kaisha Toshiba Semiconductor device
JP2016158233A (ja) * 2015-02-24 2016-09-01 アイアンドティテック株式会社 多周波数送受信回路

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3993461B2 (ja) * 2002-05-15 2007-10-17 株式会社東芝 半導体モジュール
JP3979258B2 (ja) * 2002-05-21 2007-09-19 富士電機デバイステクノロジー株式会社 Ｍｉｓ半導体装置およびその製造方法
US6851621B1 (en) * 2003-08-18 2005-02-08 Honeywell International Inc. PDA diagnosis of thermostats
JP2005353703A (ja) * 2004-06-08 2005-12-22 Nec Compound Semiconductor Devices Ltd 電界効果型トランジスタ
JP5061538B2 (ja) * 2006-09-01 2012-10-31 株式会社デンソー 半導体装置
US7851314B2 (en) * 2008-04-30 2010-12-14 Alpha And Omega Semiconductor Incorporated Short channel lateral MOSFET and method
US8223580B2 (en) * 2008-06-17 2012-07-17 Ovonyx, Inc. Method and apparatus for decoding memory
TWI503893B (zh) * 2008-12-30 2015-10-11 Vanguard Int Semiconduct Corp 半導體結構及其製作方法
TWI456738B (zh) 2010-09-02 2014-10-11 大中積體電路股份有限公司 整合轉換器之半導體元件及其封裝結構
US8853780B2 (en) * 2012-05-07 2014-10-07 Freescale Semiconductor, Inc. Semiconductor device with drain-end drift diminution
US9490322B2 (en) 2013-01-23 2016-11-08 Freescale Semiconductor, Inc. Semiconductor device with enhanced 3D resurf
US9543379B2 (en) 2014-03-18 2017-01-10 Nxp Usa, Inc. Semiconductor device with peripheral breakdown protection
US9871135B2 (en) 2016-06-02 2018-01-16 Nxp Usa, Inc. Semiconductor device and method of making
JP6678549B2 (ja) * 2016-09-27 2020-04-08 株式会社 日立パワーデバイス 半導体装置およびその製造方法、並びに電力変換システム
TWI658568B (zh) * 2017-01-03 2019-05-01 Leadtrend Technology Corporation 高壓半導體元件以及同步整流控制器
US9905687B1 (en) 2017-02-17 2018-02-27 Nxp Usa, Inc. Semiconductor device and method of making

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811065A (en) 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
JPH0590400A (ja) * 1991-09-30 1993-04-09 Rohm Co Ltd 高耐圧素子内蔵半導体装置
JP3172642B2 (ja) 1994-11-01 2001-06-04 シャープ株式会社 半導体装置
US6064086A (en) * 1995-08-24 2000-05-16 Kabushiki Kaisha Toshiba Semiconductor device having lateral IGBT
KR100225411B1 (ko) * 1997-03-24 1999-10-15 김덕중 LDMOS(a lateral double-diffused MOS) 트랜지스터 소자 및 그의 제조 방법
US5925910A (en) 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
CN1163973C (zh) * 1999-03-01 2004-08-25 通用半导体公司 沟槽式双扩散金属氧化物半导体器件及其制造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853846B2 (en) 2004-07-30 2014-10-07 Renesas Electronics Corporation Semiconductor device and a manufacturing method of the same
US9153686B2 (en) 2004-07-30 2015-10-06 Renesas Electronics Corporation Semiconductor device including DC-DC converter
US9461163B2 (en) 2004-07-30 2016-10-04 Renesas Electronics Corporation Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same
US9793265B2 (en) 2004-07-30 2017-10-17 Renesas Electronics Corporation Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same
US10204899B2 (en) 2004-07-30 2019-02-12 Renesas Electronics Corporation Semiconductor device with first and second chips and connections thereof and a manufacturing method of the same
US9165922B2 (en) 2013-03-22 2015-10-20 Kabushiki Kaisha Toshiba Semiconductor device
JP2013236095A (ja) * 2013-07-08 2013-11-21 Renesas Electronics Corp 半導体装置
WO2015072295A1 (ja) * 2013-11-12 2015-05-21 日立オートモティブシステムズ株式会社 半導体装置
US10211337B2 (en) 2013-11-12 2019-02-19 Hitachi Automotive Systems, Ltd. Semiconductor device
JP2016158233A (ja) * 2015-02-24 2016-09-01 アイアンドティテック株式会社 多周波数送受信回路

Also Published As

Publication number Publication date
US6552390B2 (en) 2003-04-22
US20020195640A1 (en) 2002-12-26

Similar Documents

Publication Publication Date Title
US10446687B2 (en) Integrated circuit connection arrangement for minimizing crosstalk
US12052014B2 (en) Semiconductor device
JP2003007843A (ja) 半導体装置
US6707128B2 (en) Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode
US9484444B2 (en) Semiconductor device with a resistance element in a trench
US8227831B2 (en) Semiconductor device having a junction FET and a MISFET for control
US12159815B2 (en) Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
US11233052B2 (en) Method of manufacturing semiconductor integrated circuit
US9893065B2 (en) Semiconductor integrated circuit
US10727228B2 (en) Stacked integrated circuit
US10217765B2 (en) Semiconductor integrated circuit
US20050098845A1 (en) Semiconductor device with horizontal MOSFET and schottky barrier diode provided on single substrate
US20250006728A1 (en) Self-clamping resistor and circuit for transistor linear region current matching
US20240243198A1 (en) Semiconductor device, methods of manufacturing semiconductor device, and semiconductor module

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041220

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050419

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20050620