JP2003006821A5 - - Google Patents

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Publication number
JP2003006821A5
JP2003006821A5 JP2002089170A JP2002089170A JP2003006821A5 JP 2003006821 A5 JP2003006821 A5 JP 2003006821A5 JP 2002089170 A JP2002089170 A JP 2002089170A JP 2002089170 A JP2002089170 A JP 2002089170A JP 2003006821 A5 JP2003006821 A5 JP 2003006821A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002089170A
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JP2003006821A (ja
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Priority claimed from US09/903,698 external-priority patent/US6704175B2/en
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Publication of JP2003006821A publication Critical patent/JP2003006821A/ja
Publication of JP2003006821A5 publication Critical patent/JP2003006821A5/ja
Pending legal-status Critical Current

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JP2002089170A 2001-03-28 2002-03-27 再生ヘッドおよび磁気バイアスの印加方法 Pending JP2003006821A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US27911301P 2001-03-28 2001-03-28
US60/279113 2001-03-28
US09/903,698 US6704175B2 (en) 2001-03-28 2001-07-13 Current perpendicular-to-the-plane magnetoresistance read head
US09/903698 2001-07-13

Publications (2)

Publication Number Publication Date
JP2003006821A JP2003006821A (ja) 2003-01-10
JP2003006821A5 true JP2003006821A5 (ja) 2005-06-30

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ID=26959461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002089170A Pending JP2003006821A (ja) 2001-03-28 2002-03-27 再生ヘッドおよび磁気バイアスの印加方法

Country Status (2)

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US (1) US6704175B2 (ja)
JP (1) JP2003006821A (ja)

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US7289304B2 (en) * 2004-10-29 2007-10-30 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure
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JP2006139886A (ja) * 2004-11-15 2006-06-01 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果型磁気ヘッド及びその製造方法
US7515388B2 (en) * 2004-12-17 2009-04-07 Headway Technologies, Inc. Composite hard bias design with a soft magnetic underlayer for sensor applications
US7446987B2 (en) * 2004-12-17 2008-11-04 Headway Technologies, Inc. Composite hard bias design with a soft magnetic underlayer for sensor applications
US7259942B2 (en) * 2005-01-10 2007-08-21 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector or emitter region
US7636223B2 (en) * 2005-01-10 2009-12-22 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure and a self-pinned layer structure
US7639459B2 (en) * 2005-01-10 2009-12-29 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure
US7710691B2 (en) * 2005-01-10 2010-05-04 Hitachi Global Storage Technologies Netherlands B.V. Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure in the collector region and a pinned layer structure in the emitter region
US7342753B2 (en) * 2005-01-20 2008-03-11 Hitachi Global Storage Technologies Netherlands B.V. In-stack biasing of the free layer of a magnetoresistive read element
US7414817B2 (en) * 2005-02-07 2008-08-19 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having a laminated hard magnet structure for free layer biasing
US7612970B2 (en) * 2005-02-23 2009-11-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor with a free layer stabilized by direct coupling to in stack antiferromagnetic layer
US7298597B2 (en) * 2005-03-29 2007-11-20 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling
US7529066B2 (en) * 2005-12-14 2009-05-05 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
US20070153432A1 (en) * 2005-12-29 2007-07-05 Tdk Corporation Magnetic head
US7698807B2 (en) * 2006-01-20 2010-04-20 Hitachi Global Storage Technologies, Netherlands B.V. Method of manufacturing a magnetic sensor by multiple depositions of varying geometry
JP4514721B2 (ja) 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
US7405909B2 (en) * 2006-03-14 2008-07-29 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to plane (CPP) magnetoresistive sensor with free layer biasing by exchange pinning at back edge
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JP4649433B2 (ja) * 2007-03-27 2011-03-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記憶装置及び磁気メモリ
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
US20110026169A1 (en) * 2009-07-28 2011-02-03 Hardayal Singh Gill Dual cpp gmr head using a scissor sensor
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JP2015169530A (ja) * 2014-03-06 2015-09-28 アルプス電気株式会社 磁気センサ
EP3023803B1 (en) * 2014-11-19 2020-03-18 Crocus Technology S.A. MLU cell for sensing an external magnetic field and a magnetic sensor device comprising the MLU cell
JP6523004B2 (ja) * 2015-03-24 2019-05-29 株式会社東芝 歪検知素子および圧力センサ

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US5627704A (en) 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
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US6005753A (en) 1998-05-29 1999-12-21 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias
US6023395A (en) * 1998-05-29 2000-02-08 International Business Machines Corporation Magnetic tunnel junction magnetoresistive sensor with in-stack biasing
JP2000057527A (ja) * 1998-08-04 2000-02-25 Alps Electric Co Ltd スピンバルブ型薄膜素子
US6473279B2 (en) * 2001-01-04 2002-10-29 International Business Machines Corporation In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads

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