JP2002540396A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002540396A5 JP2002540396A5 JP2000606984A JP2000606984A JP2002540396A5 JP 2002540396 A5 JP2002540396 A5 JP 2002540396A5 JP 2000606984 A JP2000606984 A JP 2000606984A JP 2000606984 A JP2000606984 A JP 2000606984A JP 2002540396 A5 JP2002540396 A5 JP 2002540396A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- profile
- depth
- profiler
- exploration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 description 167
- 238000005259 measurement Methods 0.000 description 102
- 239000002019 doping agent Substances 0.000 description 57
- 239000000463 material Substances 0.000 description 56
- 238000000034 method Methods 0.000 description 51
- 239000004065 semiconductor Substances 0.000 description 49
- 238000010438 heat treatment Methods 0.000 description 44
- 239000010410 layer Substances 0.000 description 37
- 239000002800 charge carrier Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 239000007943 implant Substances 0.000 description 29
- 230000008859 change Effects 0.000 description 26
- 238000009792 diffusion process Methods 0.000 description 25
- 238000004088 simulation Methods 0.000 description 22
- 239000000969 carrier Substances 0.000 description 17
- 230000006378 damage Effects 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 17
- 239000013078 crystal Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 12
- 230000003044 adaptive effect Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000523 sample Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000000638 stimulation Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 210000002381 plasma Anatomy 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 etc. Chemical class 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- 238000001028 reflection method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- YLJREFDVOIBQDA-UHFFFAOYSA-N tacrine Chemical compound C1=CC=C2C(N)=C(CCCC3)C3=NC2=C1 YLJREFDVOIBQDA-UHFFFAOYSA-N 0.000 description 1
- 229960001685 tacrine Drugs 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/274,821 US6323951B1 (en) | 1999-03-22 | 1999-03-22 | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US09/274,821 | 1999-03-22 | ||
| PCT/US2000/007357 WO2000057159A1 (en) | 1999-03-22 | 2000-03-20 | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002540396A JP2002540396A (ja) | 2002-11-26 |
| JP2002540396A5 true JP2002540396A5 (https=) | 2011-09-29 |
Family
ID=23049742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000606984A Pending JP2002540396A (ja) | 1999-03-22 | 2000-03-20 | 半導体ウェーハの活性ドーパントのプロファイルを決定するための装置及びその方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US6323951B1 (https=) |
| EP (1) | EP1192444A1 (https=) |
| JP (1) | JP2002540396A (https=) |
| AU (1) | AU3530000A (https=) |
| WO (1) | WO2000057159A1 (https=) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6885444B2 (en) | 1998-06-10 | 2005-04-26 | Boxer Cross Inc | Evaluating a multi-layered structure for voids |
| US6049220A (en) | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
| US6925346B1 (en) * | 1998-06-30 | 2005-08-02 | Jyoti Mazumder | Closed-loop, rapid manufacturing of three-dimensional components using direct metal deposition |
| US6323951B1 (en) * | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US6477685B1 (en) * | 1999-09-22 | 2002-11-05 | Texas Instruments Incorporated | Method and apparatus for yield and failure analysis in the manufacturing of semiconductors |
| JP2003512617A (ja) * | 1999-10-15 | 2003-04-02 | フェイ エレクトロン オプティクス ビー ヴィ | 材料、特に半導体中の電荷担体濃度の決定方法 |
| JP3288670B2 (ja) * | 2000-02-17 | 2002-06-04 | 科学技術振興事業団 | 試料の物理的性質の測定装置 |
| JP3288671B2 (ja) * | 2000-02-17 | 2002-06-04 | 科学技術振興事業団 | 試料の物理的性質の測定装置 |
| JP3288672B2 (ja) * | 2000-02-17 | 2002-06-04 | 科学技術振興事業団 | 試料の物理的性質の測定装置 |
| US6812047B1 (en) * | 2000-03-08 | 2004-11-02 | Boxer Cross, Inc. | Evaluating a geometric or material property of a multilayered structure |
| US6911349B2 (en) | 2001-02-16 | 2005-06-28 | Boxer Cross Inc. | Evaluating sidewall coverage in a semiconductor wafer |
| US6812717B2 (en) * | 2001-03-05 | 2004-11-02 | Boxer Cross, Inc | Use of a coefficient of a power curve to evaluate a semiconductor wafer |
| US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
| US6890772B2 (en) * | 2002-01-09 | 2005-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for determining two dimensional doping profiles with SIMS |
| AT411496B (de) * | 2002-01-25 | 2004-01-26 | Gornik Erich Dipl Ing Dr | Verfahren und einrichtung zum optischen testen von halbleiterbauelementen |
| US6971791B2 (en) * | 2002-03-01 | 2005-12-06 | Boxer Cross, Inc | Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough |
| US6958814B2 (en) * | 2002-03-01 | 2005-10-25 | Applied Materials, Inc. | Apparatus and method for measuring a property of a layer in a multilayered structure |
| US6677168B1 (en) * | 2002-04-30 | 2004-01-13 | Advanced Micro Devices, Inc. | Analysis of ion implant dosage |
| US6825933B2 (en) * | 2002-06-07 | 2004-11-30 | N&K Technology, Inc. | Computer-implemented reflectance system and method for non-destructive low dose ion implantation monitoring |
| US6777251B2 (en) * | 2002-06-20 | 2004-08-17 | Taiwan Semiconductor Manufacturing Co. Ltd | Metrology for monitoring a rapid thermal annealing process |
| US7106446B2 (en) * | 2002-06-21 | 2006-09-12 | Therma-Wave, Inc. | Modulated reflectance measurement system with multiple wavelengths |
| US7133128B2 (en) * | 2002-07-19 | 2006-11-07 | Interuniversitair Microelektronica Centrum (Imec) Vzw | System and method for measuring properties of a semiconductor substrate in a non-destructive way |
| ATE520140T1 (de) * | 2002-09-16 | 2011-08-15 | Imec | Geschaltete kapazität |
| US7126690B2 (en) * | 2002-09-23 | 2006-10-24 | Therma-Wave, Inc. | Modulated reflectance measurement system using UV probe |
| US6963393B2 (en) * | 2002-09-23 | 2005-11-08 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| US6836139B2 (en) | 2002-10-22 | 2004-12-28 | Solid State Measurments, Inc. | Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer |
| US7663385B2 (en) | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
| JP2004235648A (ja) * | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | 光電子デバイス用の半導体基板及びその製造方法 |
| DE10308646B4 (de) * | 2003-01-31 | 2008-07-10 | Osram Opto Semiconductors Gmbh | Halbleitersubstrat für optoelektronische Bauelemente und Verfahren zu dessen Herstellung |
| JP2004311580A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体評価装置及び半導体評価方法 |
| US7248367B2 (en) * | 2003-06-10 | 2007-07-24 | Therma-Wave, Inc. | Characterization of ultra shallow junctions in semiconductor wafers |
| US6891628B2 (en) * | 2003-06-25 | 2005-05-10 | N & K Technology, Inc. | Method and apparatus for examining features on semi-transparent and transparent substrates |
| DE10339991A1 (de) * | 2003-08-29 | 2005-03-31 | Advanced Micro Devices, Inc., Sunnyvale | Verbesserte Technik zum Einstellen einer Eindringtiefe während der Implantation von Ionen in ein Halbleitergebiet |
| US7280215B2 (en) * | 2003-09-24 | 2007-10-09 | Therma-Wave, Inc. | Photothermal system with spectroscopic pump and probe |
| US7142297B2 (en) | 2003-10-31 | 2006-11-28 | Synopsys Switzerland Llc | Method for simulating the movement of particles |
| US7190458B2 (en) * | 2003-12-09 | 2007-03-13 | Applied Materials, Inc. | Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity |
| US7136163B2 (en) * | 2003-12-09 | 2006-11-14 | Applied Materials, Inc. | Differential evaluation of adjacent regions for change in reflectivity |
| US7078711B2 (en) * | 2004-02-13 | 2006-07-18 | Applied Materials, Inc. | Matching dose and energy of multiple ion implanters |
| US7026175B2 (en) * | 2004-03-29 | 2006-04-11 | Applied Materials, Inc. | High throughput measurement of via defects in interconnects |
| US7190177B2 (en) * | 2004-08-18 | 2007-03-13 | The Curators Of The University Of Missouri | Method and apparatus for nondestructive sample inspection |
| US7250313B2 (en) * | 2004-09-30 | 2007-07-31 | Solid State Measurements, Inc. | Method of detecting un-annealed ion implants |
| US7666464B2 (en) * | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| US7379185B2 (en) | 2004-11-01 | 2008-05-27 | Applied Materials, Inc. | Evaluation of openings in a dielectric layer |
| US20060237811A1 (en) * | 2004-11-10 | 2006-10-26 | Boone Thomas | Non-destructive, in-line characterization of semiconductor materials |
| US20060114478A1 (en) * | 2004-11-26 | 2006-06-01 | Applied Materials, Inc. | Evaluating effects of tilt angle in ion implantation |
| GB0427318D0 (en) * | 2004-12-14 | 2005-01-19 | Imec Inter Uni Micro Electr | Method and device for the independent extraction of carrier concentration level and electrical junction depth in a semiconductor substrate |
| GB0518200D0 (en) * | 2005-09-07 | 2005-10-19 | Imec Inter Uni Micro Electr | A method and device to quantify active carrier profiles in ultra-shallow semiconductor structures |
| JP2008058108A (ja) | 2006-08-30 | 2008-03-13 | Honda Motor Co Ltd | 磁歪式トルクセンサの製造方法と電動パワーステアリング装置 |
| US7821637B1 (en) | 2007-02-22 | 2010-10-26 | J.A. Woollam Co., Inc. | System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing |
| US20080318345A1 (en) * | 2007-06-22 | 2008-12-25 | Persing Harold M | Plasma ion implantation process control using reflectometry |
| US7713757B2 (en) * | 2008-03-14 | 2010-05-11 | Applied Materials, Inc. | Method for measuring dopant concentration during plasma ion implantation |
| US20100002236A1 (en) | 2008-06-27 | 2010-01-07 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Method for determining the doping profile of a partially activated doped semiconductor region |
| US8384904B2 (en) * | 2009-03-17 | 2013-02-26 | Imec | Method and apparatus for determining the junction depth of a semiconductor region |
| WO2010115994A1 (en) | 2009-04-10 | 2010-10-14 | Imec | Determining active doping profiles in semiconductor structures |
| US8115932B2 (en) * | 2009-05-28 | 2012-02-14 | Corning Incorporated | Methods and apparatus for measuring ion implant dose |
| US9691650B2 (en) * | 2009-09-29 | 2017-06-27 | Applied Materials, Inc. | Substrate transfer robot with chamber and substrate monitoring capability |
| US8535957B1 (en) * | 2010-06-30 | 2013-09-17 | Kla-Tencor Corporation | Dopant metrology with information feedforward and feedback |
| WO2012010647A1 (en) * | 2010-07-21 | 2012-01-26 | Imec | Method for determining an active dopant profile |
| TWI575630B (zh) * | 2011-06-10 | 2017-03-21 | 應用材料股份有限公司 | 脈衝循環器 |
| US10928317B2 (en) * | 2016-06-22 | 2021-02-23 | University Of Virginia Patent Foundation | Fiber-optic based thermal reflectance material property measurement system and related methods |
| DE102016008509A1 (de) * | 2016-07-13 | 2018-01-18 | Siltectra Gmbh | Laserkonditionierung von Festkörpern mit Vorwissen aus vorherigen Bearbeitungsschritten |
| JP2018133473A (ja) * | 2017-02-16 | 2018-08-23 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
| US10928311B2 (en) * | 2018-04-17 | 2021-02-23 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Rapid multiplexed infrared 3D nano-tomography |
| US11654635B2 (en) | 2019-04-18 | 2023-05-23 | The Research Foundation For Suny | Enhanced non-destructive testing in directed energy material processing |
| US11462382B2 (en) * | 2021-02-25 | 2022-10-04 | Nanya Technology Corporation | Ion implant apparatus and method of controlling the ion implant apparatus |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4273421A (en) | 1977-01-17 | 1981-06-16 | Motorola, Inc. | Semiconductor lifetime measurement method |
| US4211488A (en) | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
| US4255971A (en) | 1978-11-01 | 1981-03-17 | Allan Rosencwaig | Thermoacoustic microscopy |
| JPS567006A (en) * | 1979-06-22 | 1981-01-24 | Ibm | Method of extending measurement range of interference |
| US4513384A (en) * | 1982-06-18 | 1985-04-23 | Therma-Wave, Inc. | Thin film thickness measurements and depth profiling utilizing a thermal wave detection system |
| US5042952A (en) | 1984-05-21 | 1991-08-27 | Therma-Wave, Inc. | Method and apparatus for evaluating surface and subsurface and subsurface features in a semiconductor |
| US4579463A (en) | 1984-05-21 | 1986-04-01 | Therma-Wave Partners | Detecting thermal waves to evaluate thermal parameters |
| US4636088A (en) * | 1984-05-21 | 1987-01-13 | Therma-Wave, Inc. | Method and apparatus for evaluating surface conditions of a sample |
| EP0200301A1 (en) * | 1985-03-01 | 1986-11-05 | Therma-Wave Inc. | Method and apparatus for evaluating surface and subsurface features in a semiconductor |
| US4952063A (en) | 1985-03-01 | 1990-08-28 | Therma-Wave, Inc. | Method and apparatus for evaluating surface and subsurface features in a semiconductor |
| US4632561A (en) | 1985-04-30 | 1986-12-30 | Therma-Wave, Inc. | Evaluation of surface and subsurface characteristics of a sample |
| US4652757A (en) * | 1985-08-02 | 1987-03-24 | At&T Technologies, Inc. | Method and apparatus for optically determining defects in a semiconductor material |
| US4750822A (en) | 1986-03-28 | 1988-06-14 | Therma-Wave, Inc. | Method and apparatus for optically detecting surface states in materials |
| US4996659A (en) * | 1986-08-20 | 1991-02-26 | Hitachi, Ltd. | Method of diagnosing integrated logic circuit |
| EP0348738A3 (de) * | 1988-07-01 | 1991-04-03 | Siemens Aktiengesellschaft | Verfahren zur zerstörungsfreien Bestimmung elektronischer Inhomogenitäten in Halbleiterschichten |
| US5042951A (en) | 1989-09-19 | 1991-08-27 | Therma-Wave, Inc. | High resolution ellipsometric apparatus |
| US5074669A (en) | 1989-12-12 | 1991-12-24 | Therma-Wave, Inc. | Method and apparatus for evaluating ion implant dosage levels in semiconductors |
| US5159412A (en) | 1991-03-15 | 1992-10-27 | Therma-Wave, Inc. | Optical measurement device with enhanced sensitivity |
| US5377006A (en) | 1991-05-20 | 1994-12-27 | Hitachi, Ltd. | Method and apparatus for detecting photoacoustic signal |
| JPH05142147A (ja) * | 1991-07-29 | 1993-06-08 | Rikagaku Kenkyusho | 試料の界面評価法 |
| US5181080A (en) | 1991-12-23 | 1993-01-19 | Therma-Wave, Inc. | Method and apparatus for evaluating the thickness of thin films |
| US5228776A (en) | 1992-05-06 | 1993-07-20 | Therma-Wave, Inc. | Apparatus for evaluating thermal and electrical characteristics in a sample |
| US5379109A (en) | 1992-06-17 | 1995-01-03 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for non-destructively measuring local resistivity of semiconductors |
| JP3124413B2 (ja) * | 1993-06-17 | 2001-01-15 | 株式会社神戸製鋼所 | 半導体ウエハの少数キャリアのライフタイム測定装置 |
| JPH0755702A (ja) * | 1993-08-12 | 1995-03-03 | Hitachi Ltd | 結晶欠陥計測装置及びそれを用いた半導体製造装置 |
| GB9316856D0 (en) * | 1993-08-13 | 1993-09-29 | Philips Electronics Uk Ltd | A method of predicting distributed effects within a device such as a power semiconductor device |
| JP3420801B2 (ja) * | 1993-08-24 | 2003-06-30 | 日本分光株式会社 | 薄膜評価方法および評価装置 |
| DE59409758D1 (de) * | 1993-10-01 | 2001-06-28 | Infineon Technologies Ag | Simulationsverfahren für MOS-Schaltkreise |
| US5574562A (en) * | 1994-12-19 | 1996-11-12 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for evaluation of high temperature superconductors |
| US6008906A (en) * | 1995-08-25 | 1999-12-28 | Brown University Research Foundation | Optical method for the characterization of the electrical properties of semiconductors and insulating films |
| US5706094A (en) | 1995-08-25 | 1998-01-06 | Brown University Research Foundation | Ultrafast optical technique for the characterization of altered materials |
| US5966019A (en) | 1996-04-24 | 1999-10-12 | Boxer Cross, Inc. | System and method for measuring properties of a semiconductor substrate in a fabrication line |
| US5883518A (en) * | 1996-04-24 | 1999-03-16 | Boxer Cross, Inc. | System and method for measuring the doping level and doping profile of a region in a semiconductor substrate |
| US5877860A (en) * | 1996-05-13 | 1999-03-02 | Boxer Cross, Inc. | System and method for measuring the microroughness of a surface of a substrate |
| US6052185A (en) * | 1997-06-30 | 2000-04-18 | Active Impulse Systems Inc. | Method and apparatus for measuring the concentration of ions implanted in semiconductor materials |
| US5978074A (en) * | 1997-07-03 | 1999-11-02 | Therma-Wave, Inc. | Apparatus for evaluating metalized layers on semiconductors |
| US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
| US6054868A (en) * | 1998-06-10 | 2000-04-25 | Boxer Cross Incorporated | Apparatus and method for measuring a property of a layer in a multilayered structure |
| US6169601B1 (en) * | 1998-06-23 | 2001-01-02 | Ade Optical Systems | Method and apparatus for distinguishing particles from subsurface defects on a substrate using polarized light |
| US6184984B1 (en) * | 1999-02-09 | 2001-02-06 | Kla-Tencor Corporation | System for measuring polarimetric spectrum and other properties of a sample |
| US6323951B1 (en) * | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US6268916B1 (en) * | 1999-05-11 | 2001-07-31 | Kla-Tencor Corporation | System for non-destructive measurement of samples |
| US6694284B1 (en) * | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
-
1999
- 1999-03-22 US US09/274,821 patent/US6323951B1/en not_active Expired - Lifetime
-
2000
- 2000-03-20 AU AU35300/00A patent/AU3530000A/en not_active Abandoned
- 2000-03-20 WO PCT/US2000/007357 patent/WO2000057159A1/en not_active Ceased
- 2000-03-20 EP EP00913943A patent/EP1192444A1/en not_active Withdrawn
- 2000-03-20 JP JP2000606984A patent/JP2002540396A/ja active Pending
-
2001
- 2001-08-21 US US09/935,128 patent/US6426644B1/en not_active Expired - Lifetime
- 2001-11-26 US US09/994,441 patent/US6483594B2/en not_active Expired - Lifetime
-
2002
- 2002-08-19 US US10/223,952 patent/US6885458B2/en not_active Expired - Lifetime
-
2004
- 2004-07-02 US US10/884,673 patent/US20040239945A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002540396A5 (https=) | ||
| US6426644B1 (en) | Apparatus and method for determining the active dopant profile in a semiconductor wafer | |
| US6049220A (en) | Apparatus and method for evaluating a wafer of semiconductor material | |
| US6052185A (en) | Method and apparatus for measuring the concentration of ions implanted in semiconductor materials | |
| US6812717B2 (en) | Use of a coefficient of a power curve to evaluate a semiconductor wafer | |
| US7982867B2 (en) | Methods for depth profiling in semiconductors using modulated optical reflectance technology | |
| US20050122525A1 (en) | Use of scanning beam for differential evaluation of adjacent regions for change in reflectivity | |
| US7403023B2 (en) | Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered. | |
| US20080224036A1 (en) | Method and device to quantify active carrier profiles in ultra-shallow semiconductor structures | |
| US20050122515A1 (en) | Differential evalution of adjacent regions for change in reflectivity | |
| EP2251673B1 (en) | Method for determining the junction depth of a semiconductor region | |
| US7499168B2 (en) | Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications | |
| US4755049A (en) | Method and apparatus for measuring the ion implant dosage in a semiconductor crystal | |
| US7403022B2 (en) | Method for measuring peak carrier concentration in ultra-shallow junctions | |
| US20080182347A1 (en) | Methods for monitoring ion implant process in bond and cleave, silicon-on-insulator (SOI) wafer manufacturing | |
| WO2010115994A1 (en) | Determining active doping profiles in semiconductor structures | |
| WO2005057194A1 (en) | Differential evaluation of adjacent regions for change in reflectivity | |
| EP0944810A1 (en) | Improved method and apparatus for measuring the concentration of ions implanted in semiconductor materials |