JP2002530859A - Ｕｖウェハ加熱および光化学作用のための装置 - Google Patents
Ｕｖウェハ加熱および光化学作用のための装置Info
- Publication number
- JP2002530859A JP2002530859A JP2000583072A JP2000583072A JP2002530859A JP 2002530859 A JP2002530859 A JP 2002530859A JP 2000583072 A JP2000583072 A JP 2000583072A JP 2000583072 A JP2000583072 A JP 2000583072A JP 2002530859 A JP2002530859 A JP 2002530859A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- radiation
- lamp house
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 230000005855 radiation Effects 0.000 claims abstract description 49
- 239000000126 substance Substances 0.000 claims abstract description 47
- 238000012545 processing Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 48
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 20
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052724 xenon Inorganic materials 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 claims 7
- 239000002243 precursor Substances 0.000 claims 5
- 230000002093 peripheral effect Effects 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 230000009977 dual effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- -1 CuCl metal halides Chemical class 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000003302 UV-light treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000034303 cell budding Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1998/024491 WO2000030157A1 (en) | 1998-11-16 | 1998-11-16 | Equipment for uv wafer heating and photochemical processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002530859A true JP2002530859A (ja) | 2002-09-17 |
Family
ID=22268309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000583072A Pending JP2002530859A (ja) | 1998-11-16 | 1998-11-16 | Ｕｖウェハ加熱および光化学作用のための装置 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1131845A1 (zh) |
| JP (1) | JP2002530859A (zh) |
| KR (1) | KR20010107966A (zh) |
| CN (1) | CN1155990C (zh) |
| WO (1) | WO2000030157A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2815395B1 (fr) * | 2000-10-13 | 2004-06-18 | Joint Industrial Processors For Electronics | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
| DE10051125A1 (de) * | 2000-10-16 | 2002-05-02 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0209131B1 (en) * | 1985-07-17 | 1991-12-04 | Nec Corporation | Optical cvd method with a strong optical intensity used during an initial period and device therefor |
| NL8602356A (nl) * | 1985-10-07 | 1987-05-04 | Epsilon Ltd Partnership | Inrichting en werkwijze voor een axiaal symmetrische reactor voor het chemische uit damp neerslaan. |
| JPH0228322A (ja) * | 1988-04-28 | 1990-01-30 | Mitsubishi Electric Corp | 半導体基板の前処理方法 |
| AU5725690A (en) * | 1989-05-04 | 1990-11-29 | Regents Of The University Of California, The | Method and apparatus for processing materials |
| US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
-
1998
- 1998-11-16 KR KR1020017006177A patent/KR20010107966A/ko not_active Application Discontinuation
- 1998-11-16 WO PCT/US1998/024491 patent/WO2000030157A1/en not_active Application Discontinuation
- 1998-11-16 EP EP98960239A patent/EP1131845A1/en not_active Withdrawn
- 1998-11-16 CN CNB988143151A patent/CN1155990C/zh not_active Expired - Fee Related
- 1998-11-16 JP JP2000583072A patent/JP2002530859A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1337062A (zh) | 2002-02-20 |
| WO2000030157A1 (en) | 2000-05-25 |
| EP1131845A1 (en) | 2001-09-12 |
| CN1155990C (zh) | 2004-06-30 |
| KR20010107966A (ko) | 2001-12-07 |
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