JP2002522920A5 - - Google Patents

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Publication number
JP2002522920A5
JP2002522920A5 JP2000565562A JP2000565562A JP2002522920A5 JP 2002522920 A5 JP2002522920 A5 JP 2002522920A5 JP 2000565562 A JP2000565562 A JP 2000565562A JP 2000565562 A JP2000565562 A JP 2000565562A JP 2002522920 A5 JP2002522920 A5 JP 2002522920A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000565562A
Other languages
Japanese (ja)
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JP2002522920A (ja
Filing date
Publication date
Priority claimed from US09/373,295 external-priority patent/US6277740B1/en
Application filed filed Critical
Publication of JP2002522920A publication Critical patent/JP2002522920A/ja
Publication of JP2002522920A5 publication Critical patent/JP2002522920A5/ja
Pending legal-status Critical Current

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JP2000565562A 1998-08-14 1999-08-13 集積回路トレンチ構造およびその作製方法 Pending JP2002522920A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9661698P 1998-08-14 1998-08-14
US60/096,616 1998-08-14
US09/373,295 US6277740B1 (en) 1998-08-14 1999-08-12 Integrated circuit trenched features and method of producing same
US09/373,295 1999-08-12
PCT/US1999/018430 WO2000010197A1 (en) 1998-08-14 1999-08-13 Integrated circuit trenched features and method of producing same

Publications (2)

Publication Number Publication Date
JP2002522920A JP2002522920A (ja) 2002-07-23
JP2002522920A5 true JP2002522920A5 (US20050276830A1-20051215-C00018.png) 2006-09-21

Family

ID=26791884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000565562A Pending JP2002522920A (ja) 1998-08-14 1999-08-13 集積回路トレンチ構造およびその作製方法

Country Status (5)

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US (3) US6277740B1 (US20050276830A1-20051215-C00018.png)
JP (1) JP2002522920A (US20050276830A1-20051215-C00018.png)
KR (1) KR100653337B1 (US20050276830A1-20051215-C00018.png)
AU (1) AU5560499A (US20050276830A1-20051215-C00018.png)
WO (1) WO2000010197A1 (US20050276830A1-20051215-C00018.png)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165247A (en) * 1997-02-24 2000-12-26 Superior Micropowders, Llc Methods for producing platinum powders
US6780765B2 (en) * 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
WO2001027983A1 (fr) * 1999-10-15 2001-04-19 Ebara Corporation Procede et appareil destines a former une interconnexion
US6646302B2 (en) * 2000-11-21 2003-11-11 Cornell Research Foundation, Inc. Embedded metal nanocrystals
EP1223615A1 (en) 2001-01-10 2002-07-17 Eidgenössische Technische Hochschule Zürich A method for producing a structure using nanoparticles
US6645444B2 (en) 2001-06-29 2003-11-11 Nanospin Solutions Metal nanocrystals and synthesis thereof
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6936181B2 (en) * 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
AU2002365267B2 (en) * 2001-10-24 2007-06-14 The Regents Of The University Of California Semiconductor liquid crystal composition and methods for making the same
US7147894B2 (en) * 2002-03-25 2006-12-12 The University Of North Carolina At Chapel Hill Method for assembling nano objects
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US7534488B2 (en) * 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US6887297B2 (en) * 2002-11-08 2005-05-03 Wayne State University Copper nanocrystals and methods of producing same
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
WO2004081111A1 (en) * 2003-03-11 2004-09-23 Dow Global Technologies Inc. High dielectric constant composites
US7901656B2 (en) * 2003-03-21 2011-03-08 Wayne State University Metal oxide-containing nanoparticles
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7682970B2 (en) 2003-07-16 2010-03-23 The Regents Of The University Of California Maskless nanofabrication of electronic components
US20050014317A1 (en) * 2003-07-18 2005-01-20 Pyo Sung Gyu Method for forming inductor in semiconductor device
KR100523917B1 (ko) * 2003-07-18 2005-10-25 매그나칩 반도체 유한회사 반도체 소자의 인덕터 형성 방법
WO2005017962A2 (en) * 2003-08-04 2005-02-24 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
US7098505B1 (en) 2004-09-09 2006-08-29 Actel Corporation Memory device with multiple memory layers of local charge storage
US20060068025A1 (en) * 2004-09-29 2006-03-30 Eastman Kodak Company Silver microribbon composition and method of making
KR100671234B1 (ko) * 2004-10-07 2007-01-18 한국전자통신연구원 전송매체를 이용한 통신장치 및 그 방법
WO2006076606A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
WO2006076610A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US8383014B2 (en) 2010-06-15 2013-02-26 Cabot Corporation Metal nanoparticle compositions
US7749299B2 (en) 2005-01-14 2010-07-06 Cabot Corporation Production of metal nanoparticles
WO2006076614A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation A process for manufacturing application specific printable circuits (aspc's) and other custom electronic devices
US7533361B2 (en) * 2005-01-14 2009-05-12 Cabot Corporation System and process for manufacturing custom electronics by combining traditional electronics with printable electronics
US7824466B2 (en) 2005-01-14 2010-11-02 Cabot Corporation Production of metal nanoparticles
US8167393B2 (en) 2005-01-14 2012-05-01 Cabot Corporation Printable electronic features on non-uniform substrate and processes for making same
JP4247627B2 (ja) * 2005-02-10 2009-04-02 セイコーエプソン株式会社 光学素子の製造方法
US20060213957A1 (en) * 2005-03-26 2006-09-28 Addington Cary G Conductive trace formation via wicking action
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
TW200741960A (en) * 2005-05-13 2007-11-01 Cambrios Technologies Corp Seed layers, cap layers, and thin films and methods of making thereof
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US8206505B2 (en) * 2005-11-29 2012-06-26 Sergei Nikolaevich Maximovsky Method for forming nano-dimensional clusters and setting ordered structures therefrom
US8404313B1 (en) 2006-03-22 2013-03-26 University Of South Florida Synthesis of nanocrystalline diamond fibers
US7625814B2 (en) * 2006-03-29 2009-12-01 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7485561B2 (en) * 2006-03-29 2009-02-03 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7718033B1 (en) * 2006-07-12 2010-05-18 The United States Of America As Represented By The United States Department Of Energy One-step method for the production of nanofluids
JP5207163B2 (ja) * 2007-03-30 2013-06-12 Nltテクノロジー株式会社 埋込配線の形成方法、表示装置用基板及び当該基板を有する表示装置
US8282754B2 (en) * 2007-04-05 2012-10-09 Avery Dennison Corporation Pressure sensitive shrink label
US20110198024A1 (en) * 2007-04-05 2011-08-18 Avery Dennison Corporation Systems and Processes for Applying Heat Transfer Labels
WO2008124581A1 (en) 2007-04-05 2008-10-16 Avery Dennison Corporation Pressure sensitive shrink label
US8404160B2 (en) 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
EP2003939A1 (en) * 2007-06-14 2008-12-17 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method for preparing a pattern for a 3-dimensional electric circuit
US8506849B2 (en) * 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
CN102365713B (zh) 2009-03-27 2015-11-25 应用纳米技术控股股份有限公司 增强光和/或激光烧结的缓冲层
US8422197B2 (en) 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
EP2752366A1 (en) 2010-01-28 2014-07-09 Avery Dennison Corporation Label applicator belt system
US20130164457A1 (en) * 2011-12-27 2013-06-27 Rigaku Innovative Technologies, Inc. Method of manufacturing patterned x-ray optical elements
WO2014011578A1 (en) 2012-07-09 2014-01-16 Applied Nanotech Holdings, Inc. Photosintering of micron-sized copper particles
DE102021204294A1 (de) * 2021-04-29 2022-11-03 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Verfüllen einer Rückseitenkavität einer Halbleiteranordnung

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466850A (en) 1980-12-29 1984-08-21 General Electric Company Method for fabricating a one-time electrically activated switch
JPS57207178A (en) * 1981-06-12 1982-12-18 Nec Home Electronics Ltd Partial plating method
US4613648A (en) 1984-03-29 1986-09-23 E. I. Du Pont De Nemours And Company Castable ceramic compositions
US4569876A (en) 1984-08-08 1986-02-11 Nec Corporation Multi-layered substrate having a fine wiring structure for LSI or VLSI circuits
US4655864A (en) 1985-03-25 1987-04-07 E. I. Du Pont De Nemours And Company Dielectric compositions and method of forming a multilayer interconnection using same
US4726991A (en) 1986-07-10 1988-02-23 Eos Technologies Inc. Electrical overstress protection material and process
US4923739A (en) 1987-07-30 1990-05-08 American Telephone And Telegraph Company Composite electrical interconnection medium comprising a conductive network, and article, assembly, and method
US5073518A (en) 1989-11-27 1991-12-17 Micron Technology, Inc. Process to mechanically and plastically deform solid ductile metal to fill contacts of conductive channels with ductile metal and process for dry polishing excess metal from a semiconductor wafer
US5453297A (en) 1990-05-11 1995-09-26 Board Of Trustees Operating Michigan State University Process for producing finely divided metals deposited on oxidized metals
US5624741A (en) 1990-05-31 1997-04-29 E. I. Du Pont De Nemours And Company Interconnect structure having electrical conduction paths formable therein
US5151168A (en) 1990-09-24 1992-09-29 Micron Technology, Inc. Process for metallizing integrated circuits with electrolytically-deposited copper
JPH04134827A (ja) * 1990-09-27 1992-05-08 Toshiba Corp 半導体装置の製造方法
JP2539712B2 (ja) * 1991-09-19 1996-10-02 喜清 荻野 窒化物粉体
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5294567A (en) 1993-01-08 1994-03-15 E. I. Du Pont De Nemours And Company Method for forming via holes in multilayer circuits
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
JP3724592B2 (ja) 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
EP0659911A1 (en) 1993-12-23 1995-06-28 International Business Machines Corporation Method to form a polycrystalline film on a substrate
DE69510477T2 (de) 1994-03-14 2000-03-16 Studiengesellschaft Kohle Mbh Verfahren zur Herstellung von hoch verstreuten Metall-Kolloiden und von auf einem Substrat gebundenen Metall-Clusters durch elektrochemische Reduktion von Metallsalzen
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5670279A (en) 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5559057A (en) 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
JPH08153690A (ja) * 1994-09-29 1996-06-11 Sony Corp 半導体装置、半導体装置の製造方法、及び配線形成方法
US5953629A (en) 1995-06-09 1999-09-14 Vacuum Metallurgical Co., Ltd. Method of thin film forming on semiconductor substrate
JPH09134891A (ja) * 1995-09-06 1997-05-20 Vacuum Metallurgical Co Ltd 半導体基板への薄膜形成方法
EP0865078A1 (en) 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
US5928405A (en) 1997-05-21 1999-07-27 Degussa Corporation Method of making metallic powders by aerosol thermolysis
US6194316B1 (en) 1998-08-10 2001-02-27 Vacuum Metallurgical Co., Ltd. Method for forming CU-thin film
US6214259B1 (en) 1998-08-10 2001-04-10 Vacuum Metallurgical Co., Ltd. Dispersion containing Cu ultrafine particles individually dispersed therein
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6319814B1 (en) 1999-10-12 2001-11-20 United Microelectronics Corp. Method of fabricating dual damascene

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