JP2002502549A - 巨大磁気抵抗性の全金属固体素子 - Google Patents

巨大磁気抵抗性の全金属固体素子

Info

Publication number
JP2002502549A
JP2002502549A JP53925797A JP53925797A JP2002502549A JP 2002502549 A JP2002502549 A JP 2002502549A JP 53925797 A JP53925797 A JP 53925797A JP 53925797 A JP53925797 A JP 53925797A JP 2002502549 A JP2002502549 A JP 2002502549A
Authority
JP
Japan
Prior art keywords
state device
solid
conductor
solid state
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP53925797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002502549A5 (enExample
Inventor
トロク、イー．ジェームズ
スピッツァー、リチャード
Original Assignee
インテグレイテッド マグニートエレクトロニクス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by インテグレイテッド マグニートエレクトロニクス filed Critical インテグレイテッド マグニートエレクトロニクス
Publication of JP2002502549A publication Critical patent/JP2002502549A/ja
Publication of JP2002502549A5 publication Critical patent/JP2002502549A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/166—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using transfluxors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Thin Magnetic Films (AREA)
JP53925797A 1996-05-02 1997-05-02 巨大磁気抵抗性の全金属固体素子 Pending JP2002502549A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1670496P 1996-05-02 1996-05-02
US60/016,704 1996-05-02
US08/846,410 1997-04-30
US08/846,410 US5929636A (en) 1996-05-02 1997-04-30 All-metal giant magnetoresistive solid-state component
PCT/US1997/007425 WO1997041601A1 (en) 1996-05-02 1997-05-02 All-metal, giant magnetoresistive, solid-state component

Publications (2)

Publication Number Publication Date
JP2002502549A true JP2002502549A (ja) 2002-01-22
JP2002502549A5 JP2002502549A5 (enExample) 2005-01-13

Family

ID=26688967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53925797A Pending JP2002502549A (ja) 1996-05-02 1997-05-02 巨大磁気抵抗性の全金属固体素子

Country Status (8)

Country Link
US (2) US5929636A (enExample)
EP (1) EP0896734B1 (enExample)
JP (1) JP2002502549A (enExample)
KR (1) KR100467117B1 (enExample)
AU (1) AU3117097A (enExample)
CA (1) CA2252926C (enExample)
DE (1) DE69735627T2 (enExample)
WO (1) WO1997041601A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2001175641A (ja) * 1999-10-19 2001-06-29 Motorola Inc デュアル・リード・ポートを含む埋め込みｍｒａｍ
JP2008517289A (ja) * 2004-10-18 2008-05-22 コミサリア、ア、レネルジ、アトミク 磁気抵抗センサーを用いた磁場測定方法および磁場測定装置
JP2016531481A (ja) * 2013-07-24 2016-10-06 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 磁気抵抗ミキサ

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US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
JPH11316919A (ja) 1998-04-30 1999-11-16 Hitachi Ltd スピントンネル磁気抵抗効果型磁気ヘッド
EP0971424A3 (en) * 1998-07-10 2004-08-25 Interuniversitair Microelektronica Centrum Vzw Spin-valve structure and method for making spin-valve structures
US6194774B1 (en) * 1999-03-10 2001-02-27 Samsung Electronics Co., Ltd. Inductor including bonding wires
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
US6507187B1 (en) * 1999-08-24 2003-01-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ultra-sensitive magnetoresistive displacement sensing device
DE10032272C2 (de) * 2000-07-03 2002-08-29 Infineon Technologies Ag Strom-Treiberanordnung für MRAM
US6538437B2 (en) * 2000-07-11 2003-03-25 Integrated Magnetoelectronics Corporation Low power magnetic anomaly sensor
US6483740B2 (en) * 2000-07-11 2002-11-19 Integrated Magnetoelectronics Corporation All metal giant magnetoresistive memory
US7248713B2 (en) 2000-09-11 2007-07-24 Micro Bar Technology, Inc. Integrated automatic telephone switch
DE10053206C1 (de) * 2000-10-26 2002-01-17 Siemens Ag Logikschaltungsanordnung
US6624490B2 (en) 2000-10-26 2003-09-23 The University Of Iowa Research Foundation Unipolar spin diode and the applications of the same
EP1370884A4 (en) * 2001-03-23 2004-08-25 Integrated Magnetoelectronics TRANSPINORIAL SAMPLER-LOCKER CIRCUIT AND ASSOCIATED APPLICATIONS
US6738284B2 (en) 2001-03-23 2004-05-18 Integrated Magnetoelectronics Corporation Transpinnor-based sample-and-hold circuit and applications
DE10118650A1 (de) * 2001-04-14 2002-10-17 Philips Corp Intellectual Pty Winkelsensor sowie Verfahren zum Erhöhen der Anisotropiefeldstärke einer Sensoreinheit eines Winkelsensors
JP3603872B2 (ja) * 2001-05-16 2004-12-22 松下電器産業株式会社 磁気センサとこれを用いた紙幣識別装置
US6688169B2 (en) 2001-06-15 2004-02-10 Textron Systems Corporation Systems and methods for sensing an acoustic signal using microelectromechanical systems technology
US6711437B2 (en) 2001-07-30 2004-03-23 Medtronic, Inc. Pacing channel isolation in multi-site cardiac pacing systems
US6700371B2 (en) * 2001-09-05 2004-03-02 Honeywell International Inc. Three dimensional conductive strap for a magnetorestrictive sensor
US6771472B1 (en) 2001-12-07 2004-08-03 Seagate Technology Llc Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments
US7046117B2 (en) * 2002-01-15 2006-05-16 Honeywell International Inc. Integrated magnetic field strap for signal isolator
US6859063B2 (en) * 2002-04-11 2005-02-22 Integrated Magnetoelectronics Corporation Transpinnor-based transmission line transceivers and applications
AU2003225048A1 (en) 2002-04-19 2003-11-03 Integrated Magnetoelectronics Corporation Interfaces between semiconductor circuitry and transpinnor-based circuitry
US8284970B2 (en) 2002-09-16 2012-10-09 Starkey Laboratories Inc. Switching structures for hearing aid
US7369671B2 (en) 2002-09-16 2008-05-06 Starkey, Laboratories, Inc. Switching structures for hearing aid
US6992919B2 (en) * 2002-12-20 2006-01-31 Integrated Magnetoelectronics Corporation All-metal three-dimensional circuits and memories
US7259545B2 (en) * 2003-02-11 2007-08-21 Allegro Microsystems, Inc. Integrated sensor
US7005852B2 (en) 2003-04-04 2006-02-28 Integrated Magnetoelectronics Corporation Displays with all-metal electronics
US7027319B2 (en) * 2003-06-19 2006-04-11 Hewlett-Packard Development Company, L.P. Retrieving data stored in a magnetic integrated memory
US7244997B2 (en) * 2003-07-08 2007-07-17 President And Fellows Of Harvard College Magneto-luminescent transducer
US20050083743A1 (en) * 2003-09-09 2005-04-21 Integrated Magnetoelectronics Corporation A California Corporation Nonvolatile sequential machines
US7177107B2 (en) * 2004-02-11 2007-02-13 Hitachi Global Storage Technologies Netherlands B.V. Preamplifier circuit with signal interference cancellation suitable for use in magnetic storage devices
EP1574850A1 (de) * 2004-03-08 2005-09-14 Siemens Aktiengesellschaft Vorrichtung zur zerstörungsfreien Erfassung von tiefen Defekten in elektrisch leitenden Materialien
US20050269612A1 (en) * 2004-05-11 2005-12-08 Integrated Magnetoelectronics Solid-state component based on current-induced magnetization reversal
JP4692805B2 (ja) * 2004-06-30 2011-06-01 Ｔｄｋ株式会社 磁気検出素子およびその形成方法
US7777607B2 (en) * 2004-10-12 2010-08-17 Allegro Microsystems, Inc. Resistor having a predetermined temperature coefficient
WO2006078720A2 (en) * 2005-01-19 2006-07-27 Integrated Magnetoelectronics Corporation Radiation detector
US7839605B2 (en) * 2005-11-13 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit
US7768083B2 (en) 2006-01-20 2010-08-03 Allegro Microsystems, Inc. Arrangements for an integrated sensor
US7911830B2 (en) * 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US7795862B2 (en) 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
US7816905B2 (en) * 2008-06-02 2010-10-19 Allegro Microsystems, Inc. Arrangements for a current sensing circuit and integrated current sensor
FR2942924B1 (fr) * 2009-03-06 2011-06-24 Thales Sa Transposeur de frequences hyperfrequences a dimensions reduites
WO2011103437A1 (en) * 2010-02-22 2011-08-25 Integrated Magnetoelectronics Corporation A high gmr structure with low drive fields
US9322889B2 (en) * 2011-12-30 2016-04-26 Nve Corporation Low hysteresis high sensitivity magnetic field sensor
EP2663095B1 (en) 2012-05-07 2015-11-18 Starkey Laboratories, Inc. Hearing aid with distributed processing in ear piece
HRP20181721T1 (hr) 2013-04-19 2018-12-28 Zetec, Inc. Sonda za inspekciju vrtložnih struja temeljena na magnetootpornim senzorima
US9632150B2 (en) * 2015-04-27 2017-04-25 Everspin Technologies, Inc. Magnetic field sensor with increased field range
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures
US10935612B2 (en) 2018-08-20 2021-03-02 Allegro Microsystems, Llc Current sensor having multiple sensitivity ranges
DE102019122671B4 (de) * 2019-08-22 2024-06-20 RUHR-UNIVERSITäT BOCHUM Passiver mikromechanischer Zähler
US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element
US11567108B2 (en) 2021-03-31 2023-01-31 Allegro Microsystems, Llc Multi-gain channels for multi-range sensor
EP4130772B1 (en) 2021-08-05 2025-07-23 Allegro MicroSystems, LLC Magnetoresistive element having compensated temperature coefficient of tmr
US11994541B2 (en) 2022-04-15 2024-05-28 Allegro Microsystems, Llc Current sensor assemblies for low currents
US12248039B2 (en) 2023-08-08 2025-03-11 Allegro Microsystems, Llc Interleaving sub-arrays of magnetoresistance elements based on reference directions to compensate for bridge offset

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JPH07153034A (ja) * 1993-11-26 1995-06-16 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子及びその製造方法
JPH08503778A (ja) * 1993-06-09 1996-04-23 インスティトゥート フュア ミクロシュトルクトウアテクノロギー ウント オプトエレクトロニク エー．ファウ． 磁性反転導体と一又は複数の磁気抵抗レジスタとからなる磁界センサ

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001175641A (ja) * 1999-10-19 2001-06-29 Motorola Inc デュアル・リード・ポートを含む埋め込みｍｒａｍ
JP2008517289A (ja) * 2004-10-18 2008-05-22 コミサリア、ア、レネルジ、アトミク 磁気抵抗センサーを用いた磁場測定方法および磁場測定装置
JP2016531481A (ja) * 2013-07-24 2016-10-06 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． 磁気抵抗ミキサ

Also Published As

Publication number Publication date
CA2252926A1 (en) 1997-11-06
US6031273A (en) 2000-02-29
EP0896734A4 (en) 1999-11-24
AU3117097A (en) 1997-11-19
WO1997041601A1 (en) 1997-11-06
EP0896734A1 (en) 1999-02-17
CA2252926C (en) 2002-08-06
EP0896734B1 (en) 2006-04-05
US5929636A (en) 1999-07-27
KR100467117B1 (ko) 2005-06-23
DE69735627D1 (de) 2006-05-18
DE69735627T2 (de) 2006-08-24
KR20000065205A (ko) 2000-11-06

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