JP2002372944A - Display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display device with which uniform and high quality display can be realized even at the tip part of a display section. SOLUTION: A column direction wiring detecting means provided in a modulation signal applying circuit 107 detects the amount of current which flows in single or a plurality of column direction wirings of display section 102 tip parts. A frame modulation signal applying circuit 108 applies voltage to frame column direction wiring in accordance with the detection result.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an image forming method and apparatus using an electron source in which a plurality of electron-emitting devices are arranged in a matrix on a two-dimensional plane.

[0002]

2. Description of the Related Art In recent years, research and development of thin large-screen display devices have been actively conducted. The present inventors are conducting research using a cold cathode as an electron source as a thin large-screen display device.

Conventionally, two types of electron-emitting devices, a hot cathode device and a cold cathode device, are known. Among them, as the cold cathode device, for example, a surface conduction type emission device, a field emission type device (hereinafter referred to as FE type), a metal / insulating layer / metal type emission device (hereinafter referred to as MIM type), and the like are known. .

[0004] As the surface conduction type emission element, for example, M.
I. Elinson, Radio Eng. ElectronPhys., 10, 1290, (1
965) and other examples described below.

[0005] The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. As this surface conduction type emission element, the above-mentioned Elinson is used.
In addition to those using a SnO ₂ thin film according to E. et al., Those using an Au thin film [G. Dittmer: “Thin Solid Films”, 9, 317
(1972)] and those based on In ₂ O ₃ / SnO ₂ thin films [M. Hartw
ell and CG Fonstad: “IEEE Trans. ED Conf.”, 5
19 (1975)], and those using carbon thin films [Hisashi Araki et al .:
Vacuum, Vol. 26, No. 1, 22 (1983)] and the like.

As a typical example of the device configuration of these surface conduction electron-emitting devices, FIG. 23 shows a plan view of the device by M. Hartwell et al. Described above. In the figure, reference numeral 3001 denotes a substrate, and reference numeral 3004 denotes a conductive thin film made of a metal oxide formed by sputtering. The conductive thin film 3004 is formed in an H-shaped planar shape as shown. An electron emission portion 3005 is formed by applying an energization process called energization forming to be described later to the conductive thin film 3004. The interval L in the figure is 0.5 to 1 [mm], and the width W is
It is set to 0.1 [mm]. For convenience of illustration, the electron-emitting portion 3005 is shown in a rectangular shape at the center of the conductive thin film 3004, but this is a schematic shape, and the position and shape of the actual electron-emitting portion are faithfully represented. Not necessarily.

In the above-described surface conduction electron-emitting device, such as the device by M. Hartwell et al., Before the electron emission, an electron emission portion 3005 is formed by subjecting the conductive thin film 3004 to an energization process called energization forming. Was common. That is, energization forming is
An electron-emitting portion is formed by energization. For example, a constant DC voltage or a DC voltage that increases at a very slow rate of, for example, about 1 V / min is applied to both ends of the conductive thin film 3004 and energized. And the conductive thin film 30
04 is locally destroyed or deformed or altered,
This is to form the electron-emitting portion 3005 in a state of being electrically high in resistance. Note that a crack is generated in a part of the conductive thin film 3004 that is locally broken, deformed, or altered. When an appropriate voltage is applied to the conductive thin film 3004 after the energization forming, electron emission is performed in the vicinity of the crack.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because of its simple structure and easy manufacture. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied.

As an example of the FE type, for example, WP Dyke
& WW Dolan, “Field emission”, Advance in Ele
ctron Physics, 8, 89 (1956), CA Spindt, “Phy
sical properties of thin-film field emission catho
des with molybdeniumcones ”, J. Appl. Phys., 47, 5
248 (1976).

FIG. 24 is a cross-sectional view of a device by CA Spindt et al. As a typical example of the FE type device configuration. In the figure, 3010 is a substrate, 3011 is an emitter wiring made of a conductive material, 3012 is an emitter cone, 3013 is an insulating layer, and 3014 is a gate electrode. This device comprises an emitter cone 3012 and a gate electrode 3
By applying an appropriate voltage during 014, field emission is caused from the tip of the emitter cone 3012. As another element configuration of the FE type, FIG.
There is also an example in which an emitter and a gate electrode are arranged on a substrate almost in parallel with the substrate plane instead of the laminated structure as described above.

Examples of the MIM type include, for example, C.I.
A. Mead, “Operation of tunnel-emission Devices,
J. Appl. Phys., 32,646 (1961) and the like are known.
FIG. 25 shows a typical example of this MIM type element configuration.
The figure is a cross-sectional view, in which 3020 is a substrate,
3021 is a lower electrode made of metal, 3022 is a thickness of 100
An insulating layer as thin as about Å, and 3023 has a thickness of 8
The upper electrode is made of a metal of about 0 to 300 angstroms. In the MIM type, electrons are emitted from the surface of the upper electrode 3023 by applying an appropriate voltage between the upper electrode 3023 and the lower electrode 3021.

The above-described cold cathode device can obtain electrons at a lower temperature than the hot cathode device, and therefore does not require a heater for heating. Therefore, the structure is simpler than that of the hot cathode element, and a fine element can be produced. Further, even when a large number of elements are arranged on a substrate at a high density, problems such as thermal melting of the substrate hardly occur. Also, unlike the response speed is slow because the hot cathode element operates by heating the heater,
In the case of a cold cathode device, there is also an advantage that the response speed is high. For this reason, research for applying the cold cathode device has been actively conducted.

For example, the surface conduction electron-emitting device has the advantage of being able to form a large number of devices over a large area because it has a particularly simple structure and is easy to manufacture among the cold cathode devices. Therefore, for example, Japanese Patent Application Laid-Open No.
As disclosed at 32, methods for arranging and driving a large number of elements are being investigated.

With respect to applications of the surface conduction electron-emitting device, for example, image forming apparatuses such as image display apparatuses and image recording apparatuses, and charged beam sources have been studied.

In particular, as an application to an image display device, for example, as disclosed in US Pat. No. 5,066,883, JP-A-2-257551, and JP-A-4-28137 by the present applicant, a surface conduction type emission device is used. An image display device using a combination of a phosphor that emits light upon irradiation with electrons has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is excellent in that it is a self-luminous type and does not require a backlight and has a wide viewing angle.

A method of arranging and driving a large number of FE elements is disclosed in, for example, US Pat. No. 4,904,89 by the present applicant.
5 is disclosed. As an example of applying the FE type to an image display device, a flat panel display device reported by R. Meyer et al. Is known. [R.Meyer: “Recent Developmen
t on Microtips Display at LETI ”, Tech.Digest of 4
th Int.Vacuum Microelectronics Conf., Nagahama, p
p. 6-9 (1991)].

An example in which a number of MIM types are arranged and applied to an image display device is disclosed in, for example, Japanese Patent Application Laid-Open No.
5738.

The inventors have tried cold cathode devices of various materials, manufacturing methods and structures, including those described in the above prior art. Further, research has been conducted on a multi-electron source in which a large number of cold cathode devices are arranged, and on an image display device using the multi-electron source.

The present inventors have tried a multi-electron source by an electrical wiring method shown in FIG. 22, for example. That is,
This is a multi-electron source in which a large number of cold cathode devices are two-dimensionally arranged, and these devices are wired in a matrix as shown in the figure.

In the figure, 4001 schematically shows a cold cathode element, 4002 shows a wiring in a row direction, and 4003 shows a wiring in a column direction. Row direction wiring 4002 and column direction wiring 4003
Actually have a finite electric resistance, but are shown as wiring resistances 4004 and 4005 in the figure. The above-described wiring method is called simple matrix wiring. Note that, for convenience of illustration, the matrix is shown as a 6 × 6 matrix, but the size of the matrix is not limited to this. For example, in the case of a multi-electron source for an image display device, a desired image is displayed. In this case, only enough elements are arranged and wired.

In a multi-electron source in which cold cathode elements are arranged in a simple matrix wiring, appropriate electric signals are applied to the row wiring 4002 and the column wiring 4003 in order to output desired electrons. For example, in order to drive an arbitrary one row of the cold cathode elements in the matrix, the selection voltage Vs is applied to the row direction wiring 4002 of the selected row, and the non-selected state is applied to the row direction wiring 4002 of the non-selected row. A selection voltage Vns is applied. In synchronization with this, a drive voltage Ve for outputting electrons is applied to the column wiring 4003. According to this method,
If the voltage drop due to the wiring resistances 4004 and 4005 is ignored, the voltage (Ve−Vs) is applied to the cold cathode element of the selected row.
Is applied, and the voltage (Ve
-Vns). These voltages Ve, Vs, Vn
If s is set to an appropriate value, electrons of a desired intensity should be output only from the cold cathode elements in the selected row,
If a different drive voltage Ve is applied to each of the column wirings, electrons of different intensities should be output from each of the elements in the selected row. Further, if the length of time during which the drive voltage Ve is applied is changed, the length of time during which electrons are output should be changed. Here, the element applied voltage (Ve-Vs) at the time of selection is hereinafter referred to as Vf. Further, as another method of obtaining electrons from a multi-electron source with a simple matrix wiring, instead of connecting a voltage source for applying a drive voltage Ve to a column-directional wiring, a current required to output desired electrons is obtained. There is also a method of connecting and driving a current source for supply. Here, the current flowing through the electron source is hereinafter referred to as an element current If, and the amount of emitted electrons is referred to as an emission current Ie.

Therefore, a multi-electron source in which cold cathode devices are arranged in a simple matrix wiring has various applications. For example, if an electric signal corresponding to image information is appropriately applied, it is suitably used as an electron source for an image display device. be able to.

[0023]

However, when a plurality of electron-emitting devices arranged in a matrix are connected to the column and row wirings, the following problems have occurred.

When a plurality of transmission lines are arranged in parallel as shown in FIG.
As shown in FIG. 26B, it is generally known that the impedance at both ends of the transmission line group decreases and the amount of current increases (end effect). In particular, the tendency is remarkable in a high frequency region. It is also known that the potential distribution between two parallel conductors is uniformly distributed at the center, while lines of electric force are distorted outward at the ends.

On the other hand, in a conventional display device, electron-emitting devices are arranged in a matrix, and a plurality of wirings in a column direction and a row direction are arranged in parallel. For this reason, there is a case where a current required to emit a desired amount of electrons flows simultaneously in the same direction on the wirings arranged in parallel.

At this time, at the both ends of the display unit, (1) a desired current value cannot be injected and a desired amount of electrons cannot be emitted because an end effect occurs. (2) Electric lines of electric force are not uniform. Irradiation of emitted electrons from the phosphor to the phosphor deviates from the intended position, and the display is uneven.

Japanese Patent Application Laid-Open No. 9-27270 discloses an arrangement in which electrodes are arranged around electron-emitting devices arranged in a matrix. According to this, there is an effect of alleviating display unevenness, but merely arranging the electrodes requires a wide area for arranging the electrodes around the display unit, which not only impairs the design as a display device, A large space other than the display unit is required, which hinders miniaturization of the device.

Further, a liquid crystal display device driven by arranging electrodes around a display section is disclosed in Japanese Patent Publication No. 2-30022 and Japanese Patent Publication No. 4-23275. However, these documents do not refer to the electron-emitting device, and drive the display element on the outer periphery of the display unit to adjust the appearance of the display unit, and do not correct the characteristics of the display element inside the display unit. .

The present invention has been made in view of the above prior art, and an object of the present invention is to provide an image display device having uniform image quality even at the end of the display section.

[0030]

In order to achieve the above object, a display device according to the present invention comprises a plurality of electron-emitting devices arranged in a matrix and a plurality of electron-emitting devices connected to the plurality of electron-emitting devices. Row direction wiring and column direction wiring, row direction wiring driving means for selecting at least one of the row direction wirings and applying a voltage, and column direction wiring driving for applying a voltage to the column direction wiring in accordance with an image signal Means, a frame column direction wiring provided around a display section comprising the row direction wiring and the column direction wiring, and a display section for applying a voltage to the frame column direction wiring independently of the column direction wiring driving means. Frame row direction wiring driving means capable of relaxing the distortion of the line of electric force at the end,
It is characterized by having.

A frame row direction wiring provided around a display section comprising the row direction wiring and the column direction wiring, and a voltage applied to the frame row direction wiring independently of the row direction wiring driving means. And a frame row direction wiring driving means capable of alleviating distortion of the electric lines of force at the ends.

A column direction wiring detecting means for detecting an amount of current flowing through one or a plurality of column direction wirings at an end of the display portion, and the frame column direction wiring driving means is controlled in accordance with a detection result by the column direction wiring detecting means. And a frame column direction wiring control means.

The frame column direction wiring control means causes a current amount calculated from a plurality of current amounts detected by the column direction wiring detection means and a plurality of stored coefficients to flow through the frame column direction wiring. Preferably, the frame column direction wiring driving means is controlled.

A column direction wiring detecting means for detecting an amount of current flowing through one or a plurality of column direction wirings at an end of the display section, and a frame row direction wiring driving means are controlled in accordance with a detection result by the column direction wiring detecting means. And frame row direction wiring control means.

Signal waveform detecting means for detecting a signal waveform applied to one or a plurality of column wirings at the end of the display unit, and controlling the frame column wiring driving means in accordance with the detection result by the signal waveform detecting means. And frame column direction wiring control means.

A high-frequency component detecting means for detecting a high-frequency component of a current waveform flowing through one or a plurality of column-direction wirings at an end portion of the display unit, and a frame-column-direction wiring driving means are controlled in accordance with a detection result by the high-frequency component detecting means. Frame column direction wiring control means.

The high frequency component detected by the high frequency component detecting means is preferably 1 MHz or more.

It is preferable that the frame row direction wiring driving means applies the same waveform to the frame row direction wiring as the signal waveform applied to the row direction wiring by the row direction wiring driving means when scanning is not selected.

The electron-emitting device is preferably a surface conduction electron-emitting device.

It is preferable that the electron emission elements are not connected to the frame column direction wiring or the frame row direction wiring.

[0041]

Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, the dimensions of the components described in this embodiment,
The material, shape, relative arrangement, and the like are not intended to limit the scope of the present invention only to them unless otherwise specified.

FIG. 1 shows a circuit configuration of a display device according to an embodiment of the present invention. In the figure, 101 is a rear plate, 102 is a display section, 103 is a frame section, 105 is a scanning signal applying circuit as row direction wiring driving means, 106 is a frame scanning signal applying circuit as frame row direction wiring driving means, 107 Is a modulation signal application circuit which is a column direction wiring driving means, 108 is a frame modulation signal application circuit which is a frame column direction wiring driving means, 109 is a high voltage power generation unit, 110 is a scanning signal control circuit which is a row direction wiring control means, 111 is a frame scanning signal control circuit which is a frame row direction wiring control means, 112 is a modulation signal control circuit which is a column direction wiring control means, 113 is a frame modulation signal control circuit which is a frame column direction wiring control means, and 114 is drive control Circuit, 11
5 is a graphic controller. Reference numeral 104 denotes a face plate, and 109 denotes a high-voltage power generation unit.

The data sent from the graphic controller 115 enters the scanning signal control circuit 110, the frame scanning signal control circuit 111, the modulation signal control circuit 112, and the frame modulation signal control circuit 113 through the drive control circuit 114, where the address data and the display data are displayed. Converted to data. Then, the scanning signal applying circuit 105 generates a scanning signal according to the address data, and the row direction wiring electrode 2 on the rear plate 101 is generated.
01 (see FIG. 2). Further, the modulation signal application circuit 107 generates a modulation signal according to the display data, and applies the modulation signal to the column direction wiring electrode 203 (see FIG. 2) of the rear plate 101.

Further, according to the address data output from the frame scanning signal control circuit 111, the frame scanning signal applying circuit 10
6 generates a frame scanning signal and applies it to the frame row direction wiring electrode 202 of the rear plate 101 (see FIG. 2). The frame modulation signal control circuit 113 generates frame data with reference to the display data at the end, the frame modulation signal application circuit 108 generates a frame modulation signal, and the frame row direction wiring electrodes 204 on the rear plate 101. (See FIG. 2). Modulation signal application circuit 10
Inside (not shown) of FIG. 7, there is a resistor which also serves as a current amount detection and a circuit protection, and measures the voltage at both ends to detect the amount of current injected into the column direction wiring 203. It has detection means. Note that the column direction wiring detection means does not necessarily need to be provided inside the modulation signal application circuit 107, and may be separately provided in a display device as appropriate.

This makes it possible to detect, for example, distortion of the lines of electric force in accordance with the detected amount of current flowing through the column wiring.

FIG. 2 shows an electrode pattern configuration of the rear plate 101. In the drawing, a row direction wiring electrode 201 and frame row direction wiring electrodes 202 are provided at both ends in the row direction, and the electrodes are arranged in the same shape in one direction. In the column direction, there are column direction wiring electrodes 203 and frame column direction wiring electrodes 204 at both ends thereof. Each electrode is arranged in one direction in the same shape.

The electrodes in the row and column directions are arranged side by side in a direction that is perpendicular or nearly perpendicular to each other to form a matrix electrode. Further, a surface conduction electron-emitting device, which will be described later, is arranged at the intersection of the row direction wiring electrode 201 and the column direction wiring electrode 203 to form the display unit 102.

FIG. 20 is an enlarged view of the display section 102. On the other hand, the frame portion 103 is not provided with a surface conduction electron-emitting device in order to reduce the processing time and suppress unnecessary emission of electrons.

FIG. 3 is a partial cross-sectional view of the display unit 102. 2A shows a cross section along the row direction wiring electrode 201, and FIG. 2B shows a cross section along the column direction wiring electrode 203. In the figure, 301 is an aluminum plate, 302 is a glass substrate,
203 is a column direction wiring electrode, 303 is an insulating layer, 201 is a row direction wiring electrode, 304 is a phosphor, and 305 is an anode electrode. A glass substrate 302 having a thickness of 3 mm is provided on an aluminum plate 301 having a thickness of 1 mm.
280 μm column-directional wiring electrodes 203 spaced 210 μm apart
They are arranged at a pitch of μm. There is an insulating layer having a thickness of 30 μm thereon, and further thereon a thickness of 15 μm and a width of 350 μm
Row direction wiring electrodes 201 are 840 μm apart by 490 μm
They are arranged at a pitch in the vertical direction with the column direction wiring electrodes 203. The face plate 104 including the phosphor 304 and the anode electrode 305 is arranged with a vacuum of about 2 mm therebetween.

FIG. 4A shows the scanning signal waveform of the driving waveform used in the present embodiment. In the figure, a waveform A is a scanning selection waveform of the row wiring electrode 201, and a voltage of -7 V is applied during a scanning selection period of about 30 μs. The waveform B is a scanning non-selection waveform, and a voltage of +7 V is applied during a scanning selection period of about 30 μs. Waveforms C and D are scanning non-selection waveforms of the frame electrode 202 in the row direction, from +7 V to +7.5 V (waveform C) when an adjacent row electrode is selected for scanning, and +7 V when not selected. (Waveform D) is applied. This is because the amount of current flowing into the scanning electrode differs depending on the display data.

FIG. 4B shows 480 row-directional wiring electrodes.
It is a timing chart when one frame row direction wiring electrode is arranged at each end. In FIG.
Reference numeral 80 denotes a scanning signal to be applied to the row direction wiring electrode, WS1, W
S2 indicates a frame scanning signal applied to the frame row direction wiring electrode. At this time, one frame is configured with a 1/480 duty for sequentially selecting 480 row-directional wiring electrodes.

In this embodiment, since the electrodes are arranged as shown in FIG. 3, when the adjacent row electrodes are selected for scanning, the frame scanning signal voltage is supplied from the modulation signal applying circuit 107 described above. With reference to the current data obtained. This is because most of the current flowing through the column-directional wiring electrodes flows into the row-directional wiring electrodes that are selected for scanning. Therefore, by referring to the current data, the amount of current flowing through the adjacent row electrodes can be predicted. , The frame scanning signal voltage is adjusted so as to reduce the distortion of the lines of electric force.

When an adjacent row electrode is not selected, almost no current flows. Therefore, the applied voltage is set to be the same as the voltage +7 V when scanning is not selected.

However, when the spacing between the row direction wiring electrodes 201 is large or when the spacing between the surface conduction electron-emitting device and the anode electrode is large, the contribution of the applied voltage to the degree of distortion of the lines of electric force is relatively small. Therefore, as a driving method different from that of the present embodiment, a voltage of +7 when scanning is not always selected is used.
The cost may be reduced by using a simple configuration in which V is added.

FIG. 5 shows a modulation signal waveform of a driving waveform used in the present embodiment. In the present embodiment, gradation display is performed by performing pulse width modulation in synchronization with rising. In the figure, a waveform A is a modulation signal waveform of the column-direction wiring electrode 203 and is a waveform at the time of performing 100% gradation display. A voltage of +7 V is applied during the scanning selection period. A waveform B is a waveform of a modulation signal of the column-direction wiring electrode 203, and is a waveform when a 50% gradation display is performed. A voltage of +7 V is applied to the graphic controller for a period determined by a built-in γ table for the purpose of an image quality adjustment function (not shown). The waveform C is a modulation signal waveform of the column-direction wiring electrode 203 and is 0%.
7 is a waveform when a gray scale display is performed. During the scanning selection period +
A voltage of 0 V is applied.

A waveform is applied to the frame column direction wiring electrode 204 with reference to the value of the current flowing through the neighboring column direction wiring electrode 203. As shown in FIG. 6, the amounts of current flowing through the column wiring electrodes d1, d2, d3, d4... Close to the frame column wiring electrodes are denoted by i1, i2, i3, i4. k2, k3, k4... are prepared. These coefficients k1, k2, k3, k4... Can be calculated from the physical shape and physical properties of the conductors and insulators by an electromagnetic field analysis technique, and the space between the frame column direction wiring electrodes and each column direction wiring electrode. Distance is the dominant parameter.

In this embodiment, since the electrodes are arranged as shown in FIG. 3, k1 = 1, k2 = 0.3, k3 = 0.1, k
4 was set to 0.04, and the terms after that were ignored. That is, k
A frame modulation signal waveform is applied so that a current amount calculated by 1 × i1 + k2 × i2 + k3 × i3 + k4 × i4 flows in a direction opposite to that in the display unit. A frame modulation signal A and modulation signals B, C, and C applied to column electrodes d1, d2, d3, and d4 close to the frame electrode.
D and E are shown in FIG. At this time, the modulation signal B is 10
A 0% gradation signal, a modulation signal C is a 50% gradation signal, a modulation signal D is an 80% gradation signal, and a modulation signal E is a 30% gradation signal. It was done. A waveform is applied to the other frame row direction wiring electrode in the same manner.

If the amount of current flowing through the column-direction wiring electrode is directly detected, a large-scale circuit configuration is obtained.
By detecting and referring to the modulation signal waveform applied to each column direction wiring electrode by the signal waveform detection means, the current amount i1, i2, i
3 and i4 are predicted in advance, and the frame modulation signal control circuit 11
The frame modulation signal may be generated by the frame modulation signal application circuit 108 based on the control of 3 or the like.

FIG. 8 shows the relationship between one horizontal scanning period (1H), the scanning signal, and the modulation signal. S is a scanning selection signal, NS is a scanning non-selection signal, WS is a frame scanning signal when an adjacent row electrode is not selected for scanning, D1 and D2 are modulation signals,
WD is a frame modulation signal.

The scanning selection signal rises almost simultaneously with the start of one horizontal scanning period. Then, after a predetermined FP time, the modulation signals start all at once. After the completion of all the modulation signals, the scanning selection signal falls at a predetermined time BP, and one horizontal scanning period is completed.

FIG. 9 shows a modulation signal waveform of another drive waveform used in the present embodiment. In the figure, a waveform A is a modulated signal waveform of the display unit 102 of the column-direction wiring electrode 203,
This is a waveform when a gradation display of 00% is performed. A voltage of +7 V is applied during the scanning selection period. A waveform B is a modulation signal waveform of the display section 102 of the column wiring electrode 203, and is a waveform when a 50% gradation display is performed. During the scanning selection period, +5. Determined by the γ table built in the graphic controller for the purpose of adjusting the image quality (not shown).
A voltage of 5 V is applied. The waveform C is the column-direction wiring electrode 203
Is a modulation signal waveform of the display section 102, and is a waveform at the time of displaying 0% gradation. A voltage of +0 V is applied during the scanning selection period.

In the case of such amplitude modulation, since the modulation signal application period is constant, the expected current waveform is subjected to a Fourier transform and an inverse transform in advance, so that, for example, the inside (not shown) of the modulation signal application circuit 107 can be obtained. Has a resistance which serves both as a current detection and a circuit protection, and has a column wiring detection means for detecting the amount of current injected into the column wiring 203 by measuring the voltage at both ends of the resistance. The high frequency component detecting means for differentiating this current amount and detecting the time change of the current exceeding a certain amount separates only the high frequency component of 1 MHz or more in which the end effect is remarkable, and generates a frame drive waveform referring to the high frequency component. You can also. As a result, a frame drive waveform with a smaller amplitude than when the entire region is referred to can be realized. This is shown in FIG. At this time, it is desirable to set the upper limit on the high frequency side as large as the processing speed allows, but in the present embodiment, the upper limit is set to 100 MHz.

FIG. 11 is an external perspective view of a display panel 1000 according to the present embodiment. FIG. 11 is a perspective view showing the internal structure of the display panel 1000 according to the present embodiment. Is cut out and shown.

In the figure, 1005 is a rear plate, 1006
Is a side wall, 1007 is a face plate, 1005
1007 form an airtight container for maintaining the inside of the display panel at a vacuum. When assembling the airtight container, it is necessary to seal the joints of the members in order to maintain sufficient strength and airtightness. For example, frit glass is applied to the joints, and 400 g is applied in the air or in a nitrogen atmosphere. Sealing was achieved by baking for 10 minutes or more at 500C to 500C. A method of evacuating the inside of the airtight container to a vacuum will be described later.

The rear plate 1005 has a substrate 1001
Are fixed, but N × M surface-conduction emission devices 1002 are formed on the substrate 1001 (where N and M are positive integers of 2 or more, and the desired number of display pixels) For example, in a display device for displaying high-definition television, N = 300.
It is desirable to set 0, M = 1000 or more.
In the present embodiment, N = 3072, M = 1024
And). The N × M surface conduction electron-emitting devices 1002
Are M row-directional wirings 1003 and N column-directional wirings 10
04 is a simple matrix wiring. 100
The portion constituted by 1 to 1004 is called a multi-electron source. The manufacturing method and structure of the multi-electron source will be described later in detail.

In this embodiment, the substrate 1001 of the multi-electron source is fixed to the rear plate 1005 of the hermetic container. However, when the substrate 1001 of the multi-electron source has a sufficient strength, The substrate 1001 of the multi-electron source may be used as the rear plate of the airtight container.

On the lower surface of the face plate 1007, a fluorescent film 1008 is formed. Since the display panel 1000 of this embodiment is for color display, phosphors of three primary colors of red (R), green (G), and blue (B) used in the field of CRT are provided on the fluorescent film 1008. It is painted separately. The phosphor of each color is separately applied in a stripe shape as shown in FIG. 12A, for example, and a black conductor 1010 is provided between the stripes of the phosphor of each color. The purpose of providing the black conductor 1010 is to prevent the display color from being shifted even if the electron irradiation position is slightly shifted, or to prevent the reflection of external light to prevent the reduction of the display contrast. This is to prevent charge-up of the fluorescent film by electrons. Although graphite is used as a main component for the black conductor 1010, any other material may be used as long as it is suitable for the above purpose.

FIG. 1 shows how to paint the three primary color phosphors.
The arrangement is not limited to the stripe arrangement shown in FIG. 2A, and may be, for example, a delta arrangement as shown in FIG. 12B or another arrangement. Note that when a monochrome display panel is manufactured, a single-color phosphor material may be used for the phosphor film 1008, and a black conductive material is not necessarily used.

A metal back 1009 known in the CRT field is provided on the surface of the fluorescent film 1008 on the rear plate side.
Is provided. The purpose of providing the metal back 1009 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 1008 so that the fluorescent film 1
In order to protect 008, to act as an electrode for applying a voltage for accelerating electrons, to act as a conductive path for excited electrons in the fluorescent film 1008, and the like.
This metal back 1009 was formed by forming a fluorescent film 1008 on a face plate substrate 1007, smoothing the surface of the fluorescent film, and vacuum-depositing aluminum thereon. Note that when a fluorescent material for low voltage is used for the fluorescent film 1008, the metal back 1009 is not used.

Although not used in the present embodiment,
For the purpose of applying acceleration voltage and improving the conductivity of the fluorescent film,
A transparent electrode made of, for example, ITO may be provided between the face plate substrate 1007 and the fluorescent film 1008.

Further, Dx1 to DxM, Dy1 to DyN and Hv
Is a terminal for electric connection of an airtight structure provided for electrically connecting the display panel 1000 and an electric circuit (not shown). Dx1 to DxM are the row direction wirings 100 of the multi-electron source.
3 and Dy1 to DyN are column direction wirings 1004 of the multi-electron source.
And Hv are electrically connected to the metal back 1009 of the face plate, respectively.

In order to evacuate the inside of the hermetic container, after assembling the hermetic container, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is evacuated to a degree of vacuum of about 10 ^-7 [torr]. Exhaust until Thereafter, the exhaust pipe is sealed, but a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing in order to maintain the degree of vacuum in the airtight container. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the hermetic container is 1 × 10 ⁻⁵ or 1 × by the adsorption action of the getter film. 10 ^-7
It is maintained at a vacuum of [torr].

As described above, the display panel 1 according to the embodiment of the present invention
000 has been described.

Next, the display panel 100 of this embodiment is described.
A method for manufacturing the multi-electron source used for the first embodiment will be described.
The multi-electron source used for the image display device of the present embodiment is
There is no limitation on the material, shape, or manufacturing method of the surface conduction electron-emitting device as long as it is an electron source in which the surface conduction electron-emitting devices are arranged in a simple matrix. However, the present inventors have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have excellent electron-emitting characteristics and can be easily manufactured. Therefore,
It can be said that this is most suitable for use in a multi-electron source of a high-brightness, large-screen image display device. Therefore, in the display panel of the above embodiment, a surface conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is used.

The basic structure, manufacturing method and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron source in which many devices are arranged in a simple matrix will be described.

(Suitable Device Configuration and Manufacturing Method of Surface Conduction Type Emission Device) A typical configuration of a surface conduction type emission device in which an electron emission portion or its peripheral portion is formed from a fine particle film is a flat type or a vertical type. Kinds are given.

(Planar surface conduction electron-emitting device) First, the structure and manufacturing method of a plane surface conduction electron-emitting device will be described. FIG. 13 is a plan view (a) and a cross-sectional view (b) for explaining the configuration of a planar surface conduction electron-emitting device. In the figure, 1101 is a substrate, 1102 and 1
103, a device electrode; 1104, a conductive thin film; 1105, an electron-emitting portion formed by an energization forming process;
Reference numeral 13 denotes a thin film formed by the activation process.

As the substrate 1101, for example, various glass substrates such as quartz glass and blue plate glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO ₂ on the above various substrates. Can be used.

The device electrodes 1102 and 1103 provided on the substrate 1101 in parallel with the substrate surface are formed of a conductive material. For example, N
i, Cr, Au, Mo, W, Pt, Ti, Cu, Pd,
A material such as Ag or the like, an alloy of these metals, a metal oxide such as In ₂ O ₃ —SnO ₂ , or a semiconductor such as polysilicon may be appropriately selected and used. . An electrode can be easily formed by using a combination of a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching. However, the electrode can be formed using other methods (for example, printing technique). I can't wait.

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode interval L is usually designed by selecting an appropriate value from the range of several hundreds of angstroms to several hundreds of micrometers. However, for application to a display device, it is preferable that the electrode spacing L be more than a few micrometers. It is in the range of ten micrometers. As for the thickness d of the device electrode, an appropriate numerical value is usually selected from a range of several hundred angstroms to several micrometers.

A fine particle film is used for the conductive thin film 1104. The fine particle film described here refers to a film including a large number of fine particles as constituent elements (including an island-shaped aggregate). When the fine particle film is examined microscopically, usually, a structure in which the individual fine particles are spaced apart from each other, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.

The particle size of the fine particles used in the fine particle film is in the range of several angstroms to several thousand angstroms, and particularly preferably in the range of 10 angstroms to 200 angstroms.
Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, conditions necessary for good electrical connection to the element electrode 1102 or 1103, conditions necessary for good energization forming described later, and electric resistance of the fine particle film itself to an appropriate value described later. Necessary conditions, etc. Specifically, it is set within a range of several Angstroms to several thousand Angstroms, and a preferable range is between 10 Angstroms and 500 Angstroms.

Examples of materials that can be used to form the fine particle film include Pd, Pt, Ru, Ag, and A.
u, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb and other metals, PdO, Sn
Oxides such as O ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB
_4, borides, including such GdB ₄ and, TiC, Zr
Carbides such as C, HfC, TaC, SiC, WC, etc .; nitrides such as TiN, ZrN, HfN, etc .; semiconductors such as Si, Ge, etc .; and carbon. Are appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film.
It was set to be included from 10 ² in the range of 10 ⁷ ohms / □].

The conductive thin film 1104 and the device electrode 11
02 and 1103 are desirably electrically connected favorably, and therefore have a structure in which a part of each overlaps. In the example of FIG. 13, the overlapping is performed in the order of the substrate, the device electrode, and the conductive thin film from the bottom, but in some cases, the substrate, the conductive thin film, and the device electrode are stacked in the order of the bottom. I can't wait.

The electron-emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has an electrically higher resistance than the surrounding conductive thin film. The crack is formed by performing a later-described energization forming process on the conductive thin film 1104.
Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 1113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process.

The thin film 1113 is made of any one of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 [Å] or less, but 300 [Å] or less. Is more preferred. The actual thin film 1113
It is difficult to accurately illustrate the position and shape of
Is schematically shown. In addition, in the plan view (a), an element in which a part of the thin film 1113 is removed is illustrated.

The basic structure of the preferred element has been described above. In the embodiment, the following element is used.
That is, blue glass is used for the substrate 1101, and the element electrode 1 is used.
Ni thin films were used for 102 and 1103. The thickness d of the device electrode is 1000 [angstrom], and the electrode interval L is 2
[Micrometer].

As a main material of the fine particle film, Pd or P
Using dO, the thickness of the fine particle film was set to about 100 [angstrom], and the width W was set to 100 [micrometer].

Next, a description will be given of a method of manufacturing a suitable flat surface conduction electron-emitting device. FIGS. 14A to 14D
Is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device, and the notation of each member is the same as in FIG.

(1) First, as shown in FIG.
Element electrodes 1102 and 1103 are formed over a substrate 1101. In forming these electrodes, the substrate 1101 is sufficiently washed in advance with a detergent, pure water, and an organic solvent, and then the material of the device electrode is deposited (for example, a deposition method such as an evaporation method or a sputtering method). Vacuum film forming technology may be used). Thereafter, the deposited electrode material is patterned by using a photolithography / etching technique, and a pair of device electrodes (1102 and 1102) shown in FIG.
Form 3).

(2) Next, a conductive thin film 1104 is formed as shown in FIG. This conductive thin film 1104
In forming (1), first, an organic metal solution is applied to the substrate (a), dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. Here, the organic metal solution is a solution of an organic metal compound containing, as a main element, a material of fine particles used for a conductive thin film (specifically, in this embodiment, Pd was used as a main element. In the embodiment, a dipping method is used as a coating method.
For example, a spinner method or a spray method may be used.

As a method of forming a conductive thin film made of a fine particle film, a method other than the method of applying an organometallic solution used in the present embodiment, for example, a vacuum deposition method, a sputtering method, or a chemical vapor deposition method In some cases, a deposition method or the like is used.

(3) Next, as shown in FIG. 10C, the forming electrodes 1110 and 1112 are supplied from the forming power supply 1110.
The electron emitting portion 1105 is formed by applying an appropriate voltage during the period 03 and performing the energization forming process.

This energization forming treatment is to energize the conductive thin film 1104 made of a fine particle film and to appropriately break, deform, or alter a part of the conductive thin film 1104 to obtain a structure suitable for emitting electrons. This is the process of changing.
A portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 110
In 5), an appropriate crack is formed in the thin film.
Note that the electrical resistance measured between the device electrodes 1102 and 1103 is significantly increased after the formation of the electron emission portions 1105 as compared to before the formation.

FIG. 15 shows an example of an appropriate voltage waveform applied from the forming power supply 1110 in order to explain the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulse-like voltage is preferable. In the case of the present embodiment, a triangular wave pulse having a pulse width T1 is continuously generated at a pulse interval T2 as shown in FIG. Was applied. At that time, the peak value Vpf of the triangular wave pulse is
The pressure was increased sequentially. Also, monitor pulses Pm for monitoring the state of formation of the electron-emitting portion 1105 are inserted between triangular-wave pulses at appropriate intervals, and the current flowing at that time is measured by the ammeter 1.
It was measured at 111.

In the embodiment, for example, 10 ⁻⁵ [to
rr], a pulse width T1
Was set to 1 [millisecond], the pulse interval T2 was set to 10 [millisecond], and the peak value Vpf was increased by 0.1 [V] for each pulse. Then, a monitor pulse Pm was inserted at a rate of one every time five triangular waves were applied. The monitor pulse voltage Vpm was set to 0.1 [V] so as not to adversely affect the forming process. The electric resistance between the device electrodes 1102 and 1103 is 1 × 10
When the current reached ⁶ [ohms], that is, when the current measured by the ammeter 1111 at the time of application of the monitor pulse became 1 × 10 ⁻⁷ [A] or less, the energization related to the forming process was terminated.

The above method is a preferable method for the surface conduction electron-emitting device of the present embodiment. For example, the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the element electrode interval L is changed In such a case, it is desirable to appropriately change the energization conditions accordingly.

(4) Next, as shown in FIG.
The device electrodes 1102 and 1103 are supplied from the activation power source 1112.
During the energization activation process, apply an appropriate voltage during
Improve electron emission characteristics. This energization activation process
This is a process of energizing the electron-emitting portion 1105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof.
(In the figure, a deposit made of carbon or a carbon compound is schematically shown as a thin film 1113). Note that by performing the energization activation process, the emission current at the same applied voltage can be typically increased by 100 times or more as compared with before the energization activation process.

Specifically, 10 ^-4 to 10 ^-5 [torr]
By applying a voltage pulse periodically in a vacuum atmosphere within the range of above, carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere is deposited. The thin film 1113 is any one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 Å or less, more preferably 300 Å or less.

FIG. 16A shows an example of an appropriate voltage waveform applied from the activation power supply 1112 in order to describe the energization method in more detail. In the present embodiment, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically, but specifically, the rectangular wave voltage Vac is 14
[V], pulse width T3 is 1 [millisecond], pulse interval T
4 is 10 [milliseconds]. The above-mentioned energization conditions are as follows:
This is a preferable condition for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the condition accordingly.

Reference numeral 1114 shown in FIG. 14D denotes an anode electrode for capturing the emission current Ie emitted from the surface conduction electron-emitting device. The anode electrode 1114 is connected to a DC high-voltage power supply 1115 and an ammeter 1116. (Note that the substrate 1101
When the activation process is performed after the display panel is incorporated in the display panel, the phosphor screen of the display panel is connected to the anode electrode 1114.
Used as). While the voltage is applied from the activation power supply 1112, the emission current Ie is measured by the ammeter 1116 to monitor the progress of the energization activation process, and the activation power supply 111
2 is controlled. FIG. 16B shows an example of the emission current Ie measured by the ammeter 1116. Power supply for activation 1
When the pulse voltage starts to be applied from 112, the emission current Ie increases with the passage of time, but eventually saturates and hardly increases. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 1112 is stopped, and the energization activation process ends.

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. Is desirable.

As described above, the planar surface conduction electron-emitting device shown in FIG. 14E was manufactured.

(Vertical Type Surface Conduction Emission Element) Next, another typical structure of a surface conduction type emission element in which the electron emission portion or its periphery is formed of a fine particle film, that is, a vertical type surface conduction type emission device. The configuration of the element will be described.

FIG. 17 is a schematic cross-sectional view for explaining a vertical basic structure of the present embodiment.
01 is a substrate, 1202 and 1203 are device electrodes, 1206
Denotes a step forming member, 1204 denotes a conductive thin film using a fine particle film, 1205 denotes an electron emitting portion formed by an energization forming process, and 1213 denotes a thin film formed by an energization activation process.

The difference between the vertical type and the flat type described above is that one of the element electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 is provided on the side surface of the step forming member 1206. It is in the point of coating. Therefore, the element electrode interval L in the planar type shown in FIG.
In the vertical type, the height is set as the step height Ls of the step forming member 1206. Note that the substrate 1201, the element electrode 120
2 and 1203, conductive thin film 120 using fine particle film
For 4, the materials listed in the description of the planar type can be used in the same manner. Step forming member 1
For 206, an electrically insulating material such as SiO ₂ is used, for example.

Next, a method of manufacturing a vertical surface conduction electron-emitting device will be described. FIGS. 18A to 18F are cross-sectional views for explaining a manufacturing process.
Is the same as

(1) First, as shown in FIG.
An element electrode 1203 is formed over a substrate 1201.

(2) Next, as shown in FIG. 13B, an insulating layer for forming a step forming member is laminated. The insulating layer may be formed by stacking, for example, SiO2 by sputtering.
For example, another film formation method such as a vacuum evaporation method or a printing method may be used.

(3) Next, as shown in FIG. 13C, an element electrode 1202 is formed on the insulating layer.

(4) Next, as shown in FIG. 14D, a part of the insulating layer is removed by using, for example, an etching method to expose the element electrode 1203.

(5) Next, as shown in FIG. 11E, a conductive thin film 1204 using a fine particle film is formed. For the formation, as in the case of the planar type, a film forming technique such as a coating method may be used.

(6) Next, as in the case of the flat type,
An electron emitting portion is formed by performing the energization forming process (the same process as the planar energization forming process described with reference to FIG. 14C may be performed).

(7) Next, as in the case of the flat type,
An energization activation process is performed to deposit carbon or a carbon compound in the vicinity of the electron-emitting portion (the same process as the planar energization activation process described with reference to FIG. 14D may be performed).

As described above, the vertical surface conduction electron-emitting device shown in FIG. 18F was manufactured.

(Characteristics of Surface Conduction Emission Device Used in Display Device) The element structure and manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described above. Next, the characteristics of the device used in the display device will be described. Is described.

FIG. 19 shows (emission current Ie) versus (element applied voltage Vf) characteristics of the element used in the display device of this embodiment.
And typical examples of (device current If) versus (device applied voltage Vf) characteristics. Note that the emission current Ie is significantly smaller than the device current If, and it is difficult to show the same current on the same scale. In addition, these characteristics are changed by changing design parameters such as the size and shape of the device. Therefore, 2
The graphs in the book are shown in arbitrary units.

The element used in the display device has the following three characteristics regarding the emission current Ie.

First, when a voltage higher than a certain voltage (hereinafter referred to as a threshold voltage Vth) is applied to the element, the emission current Ie sharply increases. On the other hand, when the voltage is lower than the threshold voltage Vth, the emission current Ie increases. Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the voltage Vf applied to the element, the emission current Ie depends on the voltage Vf.
Size can be controlled.

Third, since the response speed of the current Ie emitted from the element is fast with respect to the voltage Vf applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time for applying the voltage Vf. Can control.

Because of the above characteristics, the surface conduction electron-emitting device can be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, display can be performed by sequentially scanning the display screen by using the first characteristic. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the element under driving according to the desired light emission luminance, and the threshold voltage Vth is applied to the element in the non-selected state.
Apply less than voltage. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, since the emission luminance can be controlled by using the second characteristic or the third characteristic, gradation display can be performed.

(Structure of a Multi-Electron Source in which Many Devices are Wiring in a Simple Matrix) Next, the structure of a multi-electron source in which the above-described surface conduction electron-emitting devices are arranged on a substrate and wired in a simple matrix will be described.

FIG. 20 is a plan view of the multi-electron source used for the display panel 1000 shown in FIG. On the substrate 1001, surface conduction type emission elements similar to those shown in FIG. 13 are arranged, and these elements are wired in a simple matrix by row-direction wiring electrodes 1003 and column-direction wiring electrodes 1004. An insulating layer (not shown) is formed between the row-directional wiring electrodes 1003 and the column-directional wiring electrodes 1004 where they intersect, so that electrical insulation is maintained.

FIG. 21 shows a cross section taken along the line AA ′ of FIG.

The multi-electron source having such a structure is as follows.
After the row direction wiring electrode 1003, the column direction wiring electrode 1004, the interelectrode insulating layer (not shown), the device electrode of the surface conduction electron-emitting device and the conductive thin film are formed in advance on the substrate, the row direction wiring electrode 1003 and the column are formed. The device was manufactured by supplying power to each element via the directional wiring electrode 1004 and performing an energization forming process and an energization activation process.

[0130]

As described above, according to the present invention, by performing the frame driving, the edge effect is suppressed and the distortion of the lines of electric force is reduced, thereby providing a uniform image quality even at the edge of the display unit. I was able to.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a configuration of a display device of the present invention.

FIG. 2 is a schematic diagram showing wiring of a rear plate according to the present invention.

FIG. 3 is a partial sectional view of a rear plate and a face plate of the present invention.

FIG. 4 is a diagram showing a driving waveform used in the present invention.

FIG. 5 is a diagram showing a driving waveform used in the present invention.

FIG. 6 is a schematic diagram showing partial wiring of a rear plate according to the present invention.

FIG. 7 is a diagram showing a driving waveform used in the present invention.

FIG. 8 is a diagram showing a driving waveform used in the present invention.

FIG. 9 is a diagram showing another driving waveform used in the present invention.

FIG. 10 is a diagram showing another driving waveform used in the present invention.

FIG. 11 is a perspective view of a display panel of the present embodiment, in which a part of a display panel is cut away.

FIG. 12 is a plan view illustrating a phosphor array of a face plate of the display panel of the present embodiment.

FIGS. 13A and 13B are a plan view and a cross-sectional view, respectively, of a planar surface conduction electron-emitting device used in the present embodiment.

FIG. 14 is a cross-sectional view showing a step of manufacturing the planar surface conduction electron-emitting device of the present embodiment.

FIG. 15 is a diagram showing an applied voltage waveform during the energization forming process.

FIG. 16 shows an applied voltage waveform (a) in the energization activation process;
It is a figure showing change (b) of emission current Ie.

FIG. 17 is a sectional view of a vertical surface conduction electron-emitting device used in the present embodiment.

FIG. 18 is a cross-sectional view showing a manufacturing process of the vertical surface conduction electron-emitting device.

FIG. 19 is a graph showing typical characteristics of the surface conduction electron-emitting device used in the present embodiment.

FIG. 20 is a partial plan view of a substrate of the multi-electron source used in the present embodiment.

21 is a cross-sectional view of the substrate of the multi-electron source of FIG. 20 taken along the line AA ′ used in the present embodiment.

FIG. 22 is a diagram illustrating a wiring method of the electron-emitting device according to the present embodiment.

FIG. 23 is a plan view showing an example of a conventionally known surface conduction electron-emitting device.

FIG. 24 is a cross-sectional view showing an example of a conventionally known FE element.

FIG. 25 is a diagram showing an example of a conventionally known MIM type device.

FIG. 26 is a schematic diagram for explaining an end effect.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 101 Rear plate 102 Display part 103 Frame part 104 Face plate 105 Scan signal application circuit 106 Frame scan signal application circuit 107 Modulation signal application circuit 108 Frame modulation signal application circuit 109 High voltage power supply generator 110 Scan signal control circuit 111 Frame scan signal control circuit 112 Modulation signal control circuit 113 Frame modulation signal control circuit 114 Drive control circuit 115 Graphic controller 201 Row direction wiring electrode 202 Frame row direction wiring electrode 203 Column direction wiring electrode 204 Frame column direction wiring electrode

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H04N 5/68 H04N 5/68 B (72) Inventor Tadashi Aoki 3-30-2 Shimomaruko, Ota-ku, Tokyo F term (reference) in Canon Inc. 5C036 EE04 EF01 EF06 EF09 EG48 EH26 5C058 AA18 BA02 BA06 5C080 AA08 BB05 DD05 EE32 FF12 JJ02 JJ04 JJ04 JJ06

Claims (11)

[Claims] A plurality of electron-emitting devices arranged in a matrix; a row wiring and a column wiring connected to the plurality of electron-emitting devices; and a voltage selected by selecting at least one of the row wirings. A row-direction wiring driving unit that applies a voltage to the column-direction wiring according to an image signal, and a column-direction wiring driving unit that is provided around a display unit including the row-direction wiring and the column-direction wiring. Frame column direction wiring; frame column direction wiring driving means capable of applying a voltage to the frame column direction wiring independently of the column direction wiring driving means to reduce distortion of electric lines of force at the end of the display unit; A display device comprising: 2. A voltage is applied to a frame row direction wiring provided around a display section comprising the row direction wiring and the column direction wiring, and a voltage is applied to the frame row direction wiring independently of the row direction wiring driving means. 2. The display device according to claim 1, further comprising: a frame row direction wiring driving unit that can reduce distortion of lines of electric force at an end of the display unit. 3. 3. A column direction wiring detecting means for detecting an amount of current flowing through one or a plurality of column direction wirings at an end portion of a display portion, and said frame column direction wiring driving means according to a detection result by said column direction wiring detecting means. Column direction wiring control means for controlling
The display device according to claim 1, further comprising: 4. The frame column direction wiring control means transmits a current amount calculated from a plurality of current amounts detected by the column direction wiring detection unit and a plurality of stored coefficients to the frame column direction wiring. The display device according to claim 3, wherein the frame row direction wiring driving unit is controlled to flow. 5. A column-direction wiring detecting means for detecting an amount of current flowing through one or a plurality of column-direction wirings at an end portion of a display unit, and a frame-row-direction wiring driving means according to a detection result by the column-direction wiring detecting means. 3. The display device according to claim 1, further comprising: a frame row direction wiring control unit for controlling. 6. A signal waveform detecting means for detecting a signal waveform applied to one or a plurality of column wirings at an end of a display unit, and a frame column wiring driving means in accordance with a detection result by the signal waveform detecting means. The display device according to claim 1, further comprising: a frame column direction wiring control unit for controlling. 7. A high-frequency component detecting means for detecting a high-frequency component of a current waveform flowing in one or a plurality of column-direction wirings at an end of the display unit, and a frame-row-direction wiring driving means according to a detection result by the high-frequency component detecting means. 3. The display device according to claim 1, further comprising: a frame column direction wiring control unit configured to control the display. 8. The display device according to claim 7, wherein a high-frequency component detected by said high-frequency component detecting means is 1 MHz or more. 9. The frame row direction wiring driving means applies the same waveform to the frame row direction wiring as the signal waveform applied to the row direction wiring when the row direction wiring driving means does not select scanning. The display device according to claim 2. 10. The display device according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device. 11. The display device according to claim 1, wherein the frame column direction wiring or the frame row direction wiring is not connected to the electron-emitting device.