JPH11317183A - Image display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image display device having little color shift to a position shift in an X-direction, by forming a phosphor shape corresponding to distribution characteristics of electrons emitted. SOLUTION: This image display device has an electron emitting part 34 between a pair of element electrodes 32, 33 formed on a board 11, and also has an electron source in which plural electron emitting elements of a cold cathode type to emit electrons by a voltage applied between the element electrodes 32, 33 are disposed in a matrix shape and a phosphor to form an image by receiving radiation of the electrons emitted from the plural electron emitting elements. In this case, the shape of the phosphor is formed into a rhombus corresponding to a distribution characteristics of the electrons emitted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a display and a T
The present invention relates to an image forming apparatus such as a V display, and more particularly to an image display apparatus in which cold-cathode electron-emitting devices are arranged in a matrix.

[0002]

2. Description of the Related Art Generally, in an image forming apparatus for displaying an image by emitting electrons and colliding with a phosphor to emit light, an envelope for maintaining a vacuum atmosphere for emitting the electrons and an electron emitting device are provided. Electron source (electron-emitting device)
And an image forming member having a phosphor and the like which emits light by collision of electrons, an acceleration electrode for accelerating electrons toward the image forming member, and an acceleration voltage applied to the acceleration electrode. High-voltage power supply is required.

Conventionally, two types of electron-emitting devices are known, a thermionic electron-emitting device and a cold cathode electron-emitting device. Among them, cold cathode electrons are, for example, field emission devices (hereinafter referred to as “FE”).
Type ". ), Metal / insulating layer / metal type (hereinafter, “M
"IM type". ), A surface conduction electron-emitting device, and the like. Examples of the surface conduction electron-emitting device type include M.
I. Elinson, Radio Eng. Electron Phys. , 10,129
0 (1965).

The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a thin film having a small area formed on a substrate in parallel with the film surface. As this conduction type electron-emitting device, the above-mentioned Elinson (Elinso
n) etc., the one using an Au thin film [G. Dittmer `Thin Solid Films', 9, 3
17 (1972)] and those using an In ₂ O ₃ / SnO ₂ thin film [M. Hartwell and CGFonstad IEEE Trans. ED
Conf. ', 519 (1975)], using a carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, 22 (19)
83)] have been reported.

As a typical example of the device structure of these surface conduction electron-emitting devices, FIG. 18 shows a plan view of a device by M. Hartwell et al.
Is a conductive thin film made of a metal oxide formed by sputtering. This conductive thin film 174 is formed in an H-shaped planar shape as shown. An electron emission portion 175 is formed by subjecting the conductive thin film 174 to an energization process called energization forming described later. The interval L in the figure
Is set to 0.5 to 1 [mm], and W is set to 0.1 [mm]. In addition, for convenience of illustration, the electron emitting portion 175 is shown in a rectangular shape at the center of the conductive thin film 174, but this is a schematic shape, and the position and shape of the actual electron emitting portion are faithfully represented. Not necessarily.

In the above-described surface conduction electron-emitting device, such as the device by M. Hartwell et al., An electron-emitting portion 175 is formed by performing an energization process called energization forming on the conductive thin film 174 before electron emission. It was common to do. That is, energization forming is
A constant DC voltage or a DC voltage that increases at a very slow rate of, for example, about 1 V / minute is applied to both ends of the conductive thin film 174 to energize it, and the conductive thin film 174 is locally broken, changed, or altered. In other words, the purpose is to form the electron-emitting portion 175 in an electrically high-resistance state.

[0007] A crack is generated in a part of the conductive thin film 174 that is locally broken or deteriorated.

When an appropriate voltage is applied to the conductive thin film 174 after the energization forming, electrons are emitted in the vicinity of the crack.

An example of the FE type is, for example, WPDyke &
WWDolan`Field emission ', Advance in Electron Phy
sics, 8, 89 (1956) or CASpindt
`Physical Properties of thin-film field emission c
atheodes with molybdenum cones', J. Appl. Phys. , 4
7, 5248 (1976).

FIG. 19 shows a cross-sectional view of the above-mentioned device by CASpindt et al. As a typical example of the FE-type device configuration.

In FIG. 1, reference numeral 181 denotes a substrate, 182 denotes an emitter wiring made of a conductive material, 183 denotes an emitter cone, 184 denotes an insulating layer, and 185 denotes a gate electrode. The present device prints an appropriate voltage between the emitter cone 183 and the gate electrode 185, thereby forming the emitter cone 183.
The field emission is caused from the front end portion. Also,
As another element structure of the FE type, there is an example in which an emitter and a gate electrode are arranged on a substrate almost in parallel with the plane of the substrate, instead of the laminated structure shown in FIG. Other examples of the MIM type include, for example, C.I. A. Mead, Operation
n of tunnelemission Device
es, J .; ApplPhys. , 32, 646 (196
1) and the like are known. FIG. 20 shows a typical example of this MIM type element configuration. This figure is a sectional view, in which 191 is a substrate, 192 is a lower electrode made of metal, 183 is a thin insulating layer having a thickness of about 100 Å, and 194 is made of gold having a thickness of about 80 to 300 Å. The upper electrode. In the MIM type, electrons are emitted from the surface of the upper electrode 194 by applying an appropriate voltage between the upper electrode 194 and the lower electrode 191.

The above-described cold cathode device can obtain electrons at a lower temperature than the hot cathode device, and therefore does not require a heater for heating. Therefore, the structure is simpler than that of the hot cathode element, and a fine element can be produced. Further, even if a large number of elements are arranged on the substrate at a high density, problems such as thermal melting of the substrate hardly occur. In the case of a hot cathode device, there is an advantage that the response speed is high.

For this reason, research for applying the cold cathode device has been actively conducted.

For example, surface conduction type electrons have the advantage of being able to form a large number of devices over a large area because of their simple structure and easy manufacture among cold cathode devices. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied. In particular, regarding application to an image forming apparatus, for example, US Pat.
As disclosed in P5,066,883, JP-A-2-257551 and JP-A-4-28137, a surface conduction electron-emitting device is combined with a phosphor that emits light by irradiation with an electron beam. The image display device used in this study has been studied. An image forming apparatus using such a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display apparatuses. For example, as compared with a liquid crystal display device that has become widespread in recent years, it is excellent in that it is a self-luminous type and does not require a backlight, and has a wide viewing angle. In addition, a method of driving a plurality of FE types by arranging them is disclosed in, for example, U.S. Pat.
SP 4,904,895. Also, FE
Examples of applying the mold to an image display device include, for example, R. Meye
The flat panel display reported by R. et al. is known [R. Meyer: `Recent Development on Microtips Display
at LETI ', ech.Digest of 4th Int.Vacuum Micro-elect
ronics Conf., Nagahara. pp. 6-9 (199
1)].

An example in which a number of MIM types are arranged and applied to an image display device is disclosed in, for example, Japanese Patent Application Laid-Open No.
No. 5,557,838.

The present inventors have tried cold cathode devices of various materials, manufacturing methods and structures, including those described in the above-mentioned prior art. Furthermore, research has been conducted on a multi-electron beam source in which a large number of cold cathode devices are arranged, and on an image display device using the multi-electron beam source.

The inventors of the present application have tried a multi-electron beam source by an electric wiring method shown in FIG. 21, for example. That is, a large number of cold cathode devices are two-dimensionally arranged,
A multi-electron beam source in which these elements are wired in a matrix as shown.

In the figure, 201 is a schematic diagram of a cold cathode element, 202 is a wiring in the row direction, and 203 is a wiring in the column direction. The row wiring 202 and the column wiring 203 actually have finite electrical resistance, but are shown as wiring resistances 204 and 205 in the figure. The above-described wiring method is called simple matrix wiring.
For convenience of illustration, the matrix is shown as a 6 × 6 matrix, but the size of the matrix is not limited to this. For example, in the case of a multi-electron beam source for an image display device, a desired image display is performed. Elements that are sufficient for the operation are arranged and wired.

In a multi-electron beam source in which cold cathode elements are arranged in a simple matrix wiring, appropriate electric signals are applied to the row wiring 202 and the column wiring 203 to output a desired electron beam. For example, in order to drive an arbitrary one row of the cold cathode elements in the matrix, the selection voltage Vs is applied to the row direction wiring 202 of the selected row, and at the same time, the selection voltage Vs is applied to the row direction wiring 203 of the non-selected row. A non-selection voltage Vns is applied. In synchronization with this, a driving voltage Ve for outputting an electron beam is applied to the column wiring 202.

According to this method, if the voltage drop due to the wiring resistors 204 and 205 is ignored, a voltage of (Ve-Vs) is applied to the cold cathode element of the selected row, and the cold cathode element of the non-selected row is applied. A voltage of (Ve-Vns) is applied to the element. If the voltage values of Ve, Vs, and Vns are set to appropriate values, an electron beam having a desired intensity should be output only from the cold cathode elements in the selected row, and different driving in each of the column directions. When the voltage Ve is applied, electron beams of different intensities should be output from each of the elements in the selected row. Also, by changing the length of time during which the drive voltage Ve is applied, the length of time during which the electron beam is output can be changed.

Therefore, a multi-electron beam source in which cold cathode devices are arranged in a simple matrix wiring has various applications. For example, if an electric signal corresponding to image information is appropriately applied, it is suitable as an electron source for an image display device. Can be used.

Incidentally, in the conventional image forming apparatus,
The shape of the phosphor is, as shown in FIGS. 22 (a) and (b), most commonly a stripe shape or a circular shape as usually used for a CRT, or a rectangular or tortoise-shaped cross section. And some were arranged in a honeycomb.

In these arrangements, generally provided black stripes or black matrices are provided in order to improve the contrast and prevent the adjacent phosphors (image forming members) from protruding.

[0024]

However, in these phosphor arrangements, the beam is displaced in the X direction at the time of sealing with the electron source substrate and the face plate, and the beam applied due to a change in the voltage applied to the high voltage terminal. A shift may occur, and therefore, there is a problem that a black stripe cannot completely prevent the shift and a color shift occurs. Therefore, as a result of the study by the present inventors, it has been found that the conventional phosphor cannot be said to have an optimal shape.

Therefore, the present invention solves the above-mentioned problems by forming the shape of the phosphor in accordance with the distribution characteristics of the electrons emitted from the electron, and displays an image with little color shift with respect to the positional shift in the x direction. It is an object to provide a device.

[0026]

An image display apparatus according to the present invention for solving the above-mentioned problems has an electron emission portion between a pair of device electrodes formed on a substrate, and applies a voltage between the device electrodes. An image forming apparatus having an electron source in which a plurality of cold-cathode-type electron-emitting devices that emit electrons when applied are arranged in a matrix and a phosphor that forms an image by receiving irradiation of electrons emitted from the plurality of electron-emitting devices In this case, the shape of the phosphor is a rhombus that is a shape corresponding to the distribution characteristics of the electrons emitted.

[0027]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a display panel 10 used in the present embodiment, in which a part of the panel is cut away to show the internal structure.

In the figure, 15 is a rear plate, 16 is a side wall,
Reference numeral 17 denotes a face plate, which forms an airtight container for maintaining the inside of the display panel at a vacuum by 15 to 17. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in air or nitrogen atmosphere, 400-50
Sealing was achieved by firing at 0 degrees for 10 minutes or more.
A method of evacuating the inside of the airtight container to a vacuum will be described later.

The substrate 11 is fixed to the rear plate 15, and the cold cathode elements 12 are provided on the substrate 11 by n ×
m pieces are formed. (Here, n and m are integers of 2 or more, and are appropriately set according to the target number of display pixels.
For example, in a display device for displaying high-definition television, it is desirable to set the number to n = 3000 and m = 1000 or more. In the present embodiment, n =
3072, m = 1024). The n × m cold cathode elements are composed of m row-directional wirings 13 and n column-directional wirings 1.
4 and a simple matrix wiring.

The portion constituted by 11 to 14 is called a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail. In the present embodiment, the substrate 11 of the multi-electron beam source is fixed to the rear plate 15 of the hermetic container. However, if the substrate 11 of the multi-electron beam source has a sufficient strength, the hermetic container is used. May be used as the rear plate of the multi-electron beam source. Further, a fluorescent film 18 is formed on the lower surface of the face plate 17.

Since the present embodiment is a color display device, phosphors of three primary colors of red, green and blue used in the field of CRT are separately applied to a portion of the fluorescent film 18. The phosphors of each color are formed in a rhombic shape symmetrical with respect to the Y-axis and the X-axis, respectively, as shown in FIG. 2, corresponding to each of the electrons emitted from the individual electron-emitting devices of the electron source. , And are alternately spread with black conductors. The purpose of providing the black conductor is to reduce the shift of the display color due to the shift of the irradiation position of the electron beam, to prevent the reflection of external light to prevent the display contrast from lowering, and to charge up the fluorescent film by the electron beam. Prevention. Although graphite is used as a main component for the black conductor 22, any other material may be used as long as it is suitable for the above purpose.

A metal back 19, which is well known in the field of CRT, is provided on the surface of the phosphor 21 on the rear plate side. The purpose of providing the metal back 19 is to
8 is used as an electrode for applying an electron beam accelerating voltage in order to improve a light utilization rate by mirror-reflecting a part of the light emitted from the light emitting element 8, to protect the fluorescent film 18 from collision of negative ions, This is because the film 18 acts as a conductive path for the excited electrons. The metal back 19 was formed by forming the fluorescent film 18 on the face plate substrate 17, smoothing the surface of the fluorescent film, and vacuum-depositing Al thereon. When a fluorescent material for low voltage is used for the fluorescent film 18, the metal back 19 is not used.

Although not used in this embodiment, for the purpose of improving the conductivity of the fluorescent film for applying an acceleration voltage, for example, an IT
A transparent electrode made of O may be provided.

Further, Dx1 to Dxm and Dy1 to Dyn and Hv are electric connection terminals of an airtight structure provided for electrically connecting the display panel to an electric circuit (not shown). Dx1 to Dxm are electrically connected to the row wiring 13 of the multi-electron beam source, Dy1 to Dyn are column wiring 14 of the multi-electron beam source, and Hv is electrically connected to the metal back 19 of the face plate.

In order to evacuate the inside of the hermetic container, after the hermetic container is assembled, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is evacuated to a degree of vacuum of about 10 ^-7 Torr. I do. Thereafter, the exhaust pipe is sealed, but a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing in order to maintain the degree of vacuum in the airtight container. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the hermetic container is 1 × 10 ^-5 to 1 by the adsorbing action of the getter film. × 10 ^-7
The pressure is maintained at Torr.

The basic configuration and manufacturing method of the display panel according to the embodiment of the present invention have been described above.

Next, advantages of using a phosphor having a shape as shown in FIG. 2 will be described.

A cold cathode type electron-emitting device which has an electron-emitting portion between a pair of device electrodes formed on a substrate and emits electrons by applying a voltage between the device electrodes, for example, a surface conduction type electron-emitting device In the device, a voltage is applied to an electrode connected to the thin film in parallel with the substrate surface in order to flow a current parallel to the film surface of the thin film formed on the substrate, thereby emitting electrons. For this reason, the emitted electrons are affected by an electric field formed by applying a voltage, and are deflected to a high-potential electrode side or bent orbits. As a result, the shape of the electron beam spot when colliding with the image forming member becomes deformed or distorted.

FIG. 3A is an enlarged view of a display portion of one pixel in the image display device according to the present embodiment, and FIG. 3B is a side view for explaining electron emission. Common parts are indicated by the same numbers.

In FIG. 3A, reference numeral 39 denotes a spot shape formed on the face plate 17 by an electron beam. 35 is a glass plate, 18 is a fluorescent film, and 19 is a metal back. Reference numeral 30 denotes a power supply for driving the electron-emitting device of the present embodiment, and its output voltage is Vf. Reference numeral 34 denotes an accelerating voltage power supply for accelerating the electrons emitted from the electron-emitting device, and its output voltage is Va. 3
Reference numerals 2 and 33 denote element driving electrodes formed on the substrate 11, and 3
Reference numeral 2 denotes a low-potential-side electrode, and 33 denotes a high-potential-side electrode. Reference numeral 34 denotes an electron emission unit.

As shown in FIG. 3B, the electron emitting portion 34
It is considered that most of the emitted electrons reach the phosphor screen along a locus indicated by a dotted line.

Here, the reason why the beam spot 39 having the shape shown in FIG.
Element electrode 3 having a certain degree of spread in the direction and having a high potential
The reason for arriving at the image forming member (face plate) in a substantially fan-shaped shape having a large area on the three sides (X plus direction in the figure) has not been completely elucidated with respect to the electron emission mechanism of the surface conduction electron-emitting device. Therefore, although it is not clear, the present inventors believe that electrons having an initial velocity are emitted so as to be scattered in all directions from many experiments.

Also, of the electrons emitted in all directions, the direction toward the high potential element electrode 33 (X plus direction in the figure)
The electrons emitted to the tip 41 of the beam spot 39 reach the tip 41 of the beam spot 39, and the electrons emitted in the direction of the low-potential element electrode 32 (X minus direction in the figure) form a tail 42 of the beam spot 39.
It is believed to reach. However, beam spot 3
Since the brightness of the tail 42 of the 9 is lower than that of the other portions, it is estimated that the amount of electrons emitted toward the low potential element electrode 32 is very small.

Considering electrons having an initial velocity component in the Y direction, in FIG. 3, electrons emitted from the Y direction side of the electron emitting portion 34 are affected by the ends of the device electrodes 32 and 33. The point of arrival at the face plate 17 is gradually different from the electrons emitted from the vicinity of the center of the electron emitting portion 34 in the Y direction. Therefore, as shown in FIG. 4, the tip of the entire beam spot, that is, a portion formed by electrons emitted with an initial velocity component in the X plus direction (emitted at an initial velocity = 0 in the X direction) Since it is considered that the emitted electrons reach the central axis 43 of the beam spot, the electrons that have reached the portion in the X-plus direction from the central axis 43 have an initial velocity component in the X-plus direction when emitted from the electron emission portion 34. Has been found to be semicircular or semi-elliptical by computer simulation.

In any case, by applying a drive voltage Vf between the device electrodes 32 and 33 arranged in parallel on the substrate 11, a surface conduction type electron emission that emits electrons in a state where a substantially parallel electric field is generated in the substrate 11. In devices such as devices,
For example, if there is no correction such as a plurality of electron emitting portions 34 being arranged at axially symmetric positions surrounding the high-potential-side device electrode, or having a beam shape correcting electrode, the shape of the beam spot 39 is , Device electrode 32,
It is unavoidable that the shape becomes asymmetric with respect to the axis perpendicular to the direction of the voltage applied between 33. As such, the asymmetric shape of the beam spot 39 is not considered to be a particularly serious problem when applied to an image display device.

However, electron sources that emit electrons by forming an electric field substantially parallel to the substrate surface on which the electron-emitting devices are formed, such as the above-mentioned surface conduction electron-emitting devices, have electron emission characteristics. In the case of employing a beam spot that is asymmetric with respect to the axis perpendicular to the voltage application direction, the emitted electron beam cannot be used effectively, and it is disadvantageous in that the pixel density is further improved. Conceivable.

FIG. 5 is a view schematically showing a state in which a conventional stripe-shaped fluorescent film is irradiated with an electron source to an electron beam using a surface conduction electron-emitting device. Px,
Py is the length of the beam in the x and y directions, respectively. Py changes depending on the element length L in FIG.
By changing the distance between the Va and Vf anodes and the substrate, the beam shape in FIG. 5 changes.

Hereinafter, preferable conditions for the image forming apparatus will be described. Va changes the amount of electrons reaching the anode and changes the brightness of the beam, so that both Py and Px change. Desirable Va is several hundred volts to several tens of kV from the viewpoint of beam luminance, electric energy and the like.

An electric field in the Px direction is applied by Vf, and the beam width Px changes due to this effect. A voltage of up to 20 V is desirable for reasons such as driving power. Further, both Px and Py of the beam change depending on the distance between the anodes. Va,
Although it depends on Vf, 1 mm to 5 mm is desirable.

On the other hand, in the present embodiment, as shown in FIG. 6, it is formed in a rhombic shape symmetric with respect to each of the X axis and the Y axis. FIG. 6A shows a conventional stripe phosphor, and FIG. 6B shows a rhombus phosphor of the present invention. For comparison, the pitches of the phosphors in FIGS. It was done. In both cases, generally provided black stripes or black matrices are provided in order to improve the contrast and prevent the adjacent phosphors (image forming members) from protruding or the like. However, in the sealing between the electron source substrate and the face plate, the displacement in the X direction is large, or the beam is displaced due to a change in the voltage applied to the high-voltage terminal. There was sometimes.

As can be seen by comparing the portions shown as misaligned beams 61 in FIG. 6A and FIG. 6B, for the same amount of misalignment, the embodiment of the present invention The portion where the beam spot hits the phosphor is reduced. Therefore, the electron beam can be converted into light or the like with little color shift. In FIG. 6A, the distance between the phosphors in the X direction is a. However, when a = 0 as shown in FIG. 6C, the distance between the phosphors is approximately as shown in FIG. However, since the color misregistration is small and the pitch in the X direction is short, higher definition is achieved. By arranging the phosphors in the X direction by a half pitch as shown in FIG. 6D, the pitch in the Y direction can be shortened, and the definition in the Y direction can be further improved. Next, the configuration of the pixel shape and the electron emission direction in the present embodiment will be described in more detail. First, regarding the shape of the pixel, a black member called a black stripe or a black matrix, which is generally provided as described above, is first formed by a manufacturing method such as printing, and R.P. G. FIG. B. May be formed by printing or the like. That is, with respect to the pixel shape, an almost arbitrary pixel shape can be created by a method used in a conventional CRT, PDP, or the like.

The details will be described below.

FIG. 7 is a plan view of the electron source substrate, wherein 32 is a low-voltage side device electrode, 33 is a high-voltage side device electrode, 14 is a column wiring, 13 is a row wiring, 34 is an electron emitting portion, Is a connection electrode, and in this configuration, all electron beams have a fan shape spreading in the X plus direction.

FIG. 8 is a diagram in which the wirings in the Y direction are skipped one by one and the elements are shifted one by one in the x direction.

FIG. 9 shows a configuration in which image information provided from various image information sources such as a television broadcast can be displayed on a display panel 80 having a multi-electron source formed as described above. It is a block diagram showing an example of a multifunctional display.

In the figure, reference numeral 80 denotes a display panel according to the present embodiment. For example, the phosphor 1 has a phosphor having the shape shown in FIG. 9 is configured. 81 (a), 8
1 (b) is a drive circuit for the display panel 80, 81 (a) is a drive circuit in the X-axis direction, and 81 (b)
Indicates a drive circuit in the Y-axis direction. When the display device of the present embodiment receives a signal including both video information and audio information, such as a television signal, the display device naturally reproduces the audio simultaneously with the display of the video. A description of circuits and speakers relating to reception, separation, reproduction, processing, storage, and the like of audio information that is not directly related to the gist of the present invention will be omitted.

Hereinafter, the function of each unit will be described along the flow of the image signal.

First, the TV signal receiving circuit 92, for example,
This is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. Here, the format of the received TV signal is not particularly limited. For example, NTSC, PAL, SEC
Any processing method such as the AM method may be used. Also, a TV signal (for example, M
A so-called high-definition TV such as the USE system is a signal source suitable for taking advantage of the display panel 80 suitable for a large area and a large number of pixels. The TV signal received by the TV signal receiving circuit 92 is output to the decoder 84.

The V signal receiving circuit 93 is a circuit for receiving a TV pixel signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. This TV
Similarly to the TV signal receiving circuit 92, the signal receiving circuit 93 is not limited to a particular TV signal system.
The TV signal received by this circuit is also output to the decoder 84.

The image input interface circuit 91 is a circuit for taking in an image signal supplied from an image input device such as a TV camera or an image reading scanner.
The captured image signal is output to the decoder 84. The image memory interface circuit 90 is a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR). The captured image signal is output to the decoder 84. The image memory interface circuit 88 is a circuit for taking in an image signal from a device in which still image data is arranged, such as a so-called still image disk.
Is output to

The input / output interface circuit 85 is a circuit for connecting the display device of the present embodiment to an external computer, a computer network, or an output device such as a printer. In addition to inputting and outputting image data, character data, and graphic information, control signals and numerical data can be input and output between the CPU 86 included in the display device and external devices in some cases. is there.

The image generation circuit 87 displays an image based on image data and character / graphic information input from the outside via the input / output interface circuit 85, or image data and character / graphic information output from the CPU 86. This is a circuit for generating image data for use. This image generation circuit 8
7, a rewritable memory for storing, for example, image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code,
Various circuits necessary for generating an image, such as a processor for performing image processing, are incorporated. The display image data generated by the image generation circuit 87 is output to the decoder 84. In some cases, the display image data can be input / output through an external computer network or a printer via the input / output interface circuit 85.

The CPU 86 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image. For example, a control signal is output to the multiplexer 83,
An image signal to be displayed on the display panel is appropriately selected or combined. At that time, a control signal is generated to the display panel controller 82 in accordance with the image signal to be displayed, and the display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines on one screen, and the like are displayed. The operation of the device is appropriately controlled. Further, image data and character / graphic information are directly input to the image generation circuit, or image data and character / graphic information are input by accessing an external computer or memory via the input / output interface circuit 85. I do.
Note that the CPU 86 may be of course related to work for other purposes. For example, a computer such as a personal computer or a word processor may be connected to an external computer network via the input / output interface circuit 85 to perform operations such as numerical calculations in cooperation with external devices.

Reference numeral 94 denotes an input unit for allowing a user to input commands, programs, data, and the like to the CPU 86. For example, in addition to a keyboard and a mouse, a joystick, a barcode reader, a voice recognition device, etc. Equipment can be used.

The decoder 84 is a circuit for inversely converting various image signals input from the circuits 80 to 94 into three primary color signals or a luminance signal and I and Q signals. In addition,
As shown by a dotted line in FIG. 7, the decoder 84 preferably has an image memory therein. This is, for example, MUS
This is for handling a television signal that requires an image memory when inversely converting compressed image data, such as the E system. The provision of such an image memory facilitates the display of a still image. Alternatively, or in cooperation with the image generation circuit 87 and the CPU 86,
There is an advantage that image processing and editing such as image thinning, interpolation, enlargement, reduction, and composition can be easily performed.

The multiplexer 83 includes a CPU 86
A display image is appropriately selected based on a control signal input from the controller. That is, the multiplexer 83 is connected to the decoder 8
4, a desired image signal is selected from the input inversely converted image signals and output to the drive circuit 81. In that case, by switching and selecting the image signal within one screen display time, it is possible to divide one screen into a plurality of areas and display a different image for each area, as in a so-called multi-screen TV. is there. The display panel controller 82 is a circuit for controlling the operation of the drive circuits 81 (a) and 81 (b) based on the control signal input from the CPU 86.

First, as a basic operation of the display panel 80, for example, the display panel 8
A signal for controlling an operation sequence of a drive power supply (not shown) of 0 is output to the drive circuits 81 (a) and 81 (b). In addition, as a signal related to the driving method of the display panel 80, for example, a signal for controlling a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is output to the driving circuits 81 (a) and 81 (b). I do. In some cases, control signals for adjusting image quality such as brightness, contrast, color tone, and sharpness of a display image are supplied to the driving circuits 81 (a) and 81 (a).
There is also a case where output is performed for (b).

The driving circuits 81 (a) and 81 (b)
Is a circuit for generating a drive signal to be applied to the display panel 80, and includes an image signal input from the multiplexer 83 and a display panel controller 82
It operates based on a control signal input from the controller.

The function of each unit has been described above. With the configuration illustrated in FIG.
Image information input from various image information sources can be displayed on the display panel 80. That is, various image signals including television broadcasting are supplied to the decoder 84.
After being inversely converted in, the signal is appropriately selected in the multiplexer 83 and input to the drive circuits 81 (a) and 81 (b).

On the other hand, the display controller 82
Driving circuits 81 (a), 81 according to an image signal to be displayed
A control signal for controlling the operation of (b) is generated. The driving circuits 81 (a) and 81 (b) display an image on the display panel 80 based on the image signal and the control signal. These series of operations are generally controlled by the CPU.

Further, in the display device of the present embodiment, since the image memory incorporated in the decoder 84, the image generation circuit and the CPU are involved, only the information selected from a plurality of pieces of image information is displayed. Instead of image information to be displayed, for example, image processing such as enlargement, reduction, rotation, movement, edge enhancement, thinning, interpolation, color conversion, vertical and horizontal conversion of the image, and synthesis, deletion, connection, replacement, inset, etc. It is also possible to perform image editing. Although not particularly described in the description of the present embodiment, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Accordingly, the display device of the present embodiment can have the functions of a television broadcast display device, a computer terminal device, an office terminal device such as a word processor, a game machine, and the like in a single unit. It has a very wide range of applications for industrial or consumer use.

FIG. 9 shows only an example of the configuration of a display device using a display panel 80 using a surface conduction electron-emitting device as an electron beam source, and the present invention is not limited to this. . For example, among the components in FIG. 10, circuits relating to functions that are unnecessary for the intended use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied as a videophone, it is optimal to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present display device, in particular, a display panel using a surface conduction electron-emitting device as an electron beam source can be easily thinned, so that the depth of the entire display device can be reduced. In addition, the display panel using the surface conduction electron-emitting device as the electron beam source is easy to enlarge the screen, has high brightness, and has excellent viewing angle characteristics. It is possible to display with good visibility.

Next, a method of manufacturing the multi-electron beam source used for the display panel 80 of the present embodiment will be described. The multi-electron beam source used in the image display device of the present embodiment is not limited as long as it is an electron source in which surface conduction electron-emitting devices are arranged in a simple matrix, and the material, shape, and manufacturing method of the surface conduction electron-emitting device are not limited. However, the present inventors have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have excellent electron-emitting characteristics and can be easily manufactured. Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance, large-screen image display device. Therefore, the display panel 8 of the above embodiment is
In the case of No. 0, a surface conduction electron-emitting device having the electron-emitting portion or its peripheral portion formed of a fine particle film was used.

The basic structure, manufacturing method and characteristics of a preferred surface conduction electron-emitting device will be described first, and then the structure of an electron beam source in which a large number of devices are arranged in a simple matrix will be described.

A typical configuration of a surface conduction electron-emitting device in which an electron-emitting portion or its peripheral portion is formed from a fine particle film includes:
There are two types, a flat type and a vertical type. The surface conduction type electron-emitting device used in the present embodiment is optimally a flat type.

Therefore, the device configuration and manufacturing method of the planar type surface conduction electron-emitting device will be described.

FIG. 10 is a plan view (a) and a sectional view (b) for explaining the structure of a plane type surface conduction electron-emitting device.

In the figure, 101 is a substrate, and 102 and 103 are
The device electrodes correspond to the electrode pairs 32 and 33 shown in FIG. Reference numeral 104 denotes a conductive thin film, and 105 denotes an electron-emitting portion formed by an energization forming process, and corresponds to 34 in FIG. Reference numeral 105 denotes a thin film formed by a current activation process.

As the substrate 101, for example, various glass substrates such as quartz glass and blue plate glass, various ceramics substrates such as alumina, or a substrate in which an insulating layer made of, for example, SiO 2 is laminated on the various substrates described above. , Etc. can be used. Also, device electrodes 102 and 103 provided on the substrate 101 in parallel to the substrate surface are provided.
Is formed of a conductive material. For example, Ni, Cr, Au, Mo, W, Pt, Ti, Cu,
Materials may be appropriately selected from metals such as Pd and Ag, alloys of these metals, metal oxides such as In ₂ O ₃ —SnO ₂ , and semiconductors such as polysilicon. The electrodes can be easily formed by using a combination of a film forming technique such as vacuum deposition and a patterning technique such as photolithography and etching. However, other methods (for example, printing techniques) may be used. .

The shapes of the device electrodes 102 and 103 are appropriately designed according to the application purpose of the electron-emitting device. Generally, the electrode interval L is usually designed by selecting an appropriate value from the range of several hundreds of angstroms to several hundreds of micrometers. However, for application to a display device, it is preferable that the electrode spacing L be more than a few micrometers. It is in the range of ten micrometers. As for the thickness d of the device electrode, an appropriate numerical value is usually selected from a range of several hundred angstroms to several micrometers.

A fine particle film is used for the conductive thin film 104. The fine particle film described here refers to a film including a large number of fine particles as constituent elements (including an island-shaped aggregate). When the fine particle film is examined microscopically, usually, a structure in which the individual fine particles are spaced apart from each other, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.

The particle size of the fine particles used in the fine particle film is in the range of several Angstroms to several thousand Angstroms, and particularly preferably in the range of 10 Angstroms to 200 Angstroms.
Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, conditions necessary for achieving good electrical contact with the device electrode 102 or 103, conditions necessary for setting the electric resistance of the fine particle film itself to an appropriate value described later, and the like.

Specifically, it is set within the range of several angstroms to several thousand angstroms, and particularly preferably, it is between 10 angstroms and 500 angstroms.

Materials used for forming the fine particle film include, for example, Pd, Pt, Ru, Ag, A
u, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb and other metals, PdO, SnO ₂ , In
Oxides such as ₂ O ₃ , PbO, Sb ₂ O ₃ , HfB ₂ , Zr
And _{B 2, LaB 6, CeB 6} , YB 4, GdB borides such as _{4, TiC, ZrC, HfC,} TaC, SiC, and carbides such as WC, TiN, ZrN, nitrides such as HfN and,
Semiconductors such as Si and Ge, carbon, and the like can be cited, and are appropriately selected from these.

As described above, the conductive thin film 104 is formed of a fine particle film.
0 ³ was configured to be in the range of 10 ⁷ [Ω / sq].

The conductive thin film 104 and the device electrode 102
And 103 are preferably electrically connected to each other, and thus have a structure in which a part of each overlaps with the other. In the example of FIG. 11, the overlapping may be performed by stacking the substrate, the conductive thin film, and the device electrode in this order from the bottom.

The electron emitting portion 105 is formed of the conductive thin film 1
This is a crack-like portion formed in a part of the conductive film 04 and has a higher electrical property than the surrounding conductive thin film.
The crack is formed by performing a later-described energization forming process on the conductive thin film 104. Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 106 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 105 and its vicinity. The thin film 106 is formed by performing an energization activation process described later after the normal forming process.

The thin film 106 is made of either single crystal graphite or amorphous carbon or a mixture thereof, and has a thickness of 500 [angstrom] or less.
[Angstrom] is more preferable.
Since it is difficult to accurately show the actual position and shape of the thin film 106, it is schematically shown in FIG. In the plan view of FIG. 10A, an element in which a part of the thin film 106 has been removed is illustrated.

While the basic structure of the preferred device has been described above, the following device was used in the embodiment.

That is, blue glass is used for the substrate 101,
Ni thin films were used for the device electrodes 102 and 103. The thickness d of the device electrode was 10000 angstroms, and the electrode interval L was 2 micrometers. Pd or PdO is used as the main material of the fine particle film, and the thickness of the fine particle film is about 10
0 angstrom and width W were 100 micrometers.

Next, a description will be given of a method of manufacturing a suitable flat surface conduction electron-emitting device. FIGS. 10A to 10D
FIG. 11 is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device, and FIG. 11E is a cross-sectional view of a planar surface conduction electron-emitting device manufactured by this method.

First, as shown in FIG.
Element electrodes 102 and 103 are formed on the substrate 01.

In forming the electron-emitting device of this embodiment, the substrate 101 is sufficiently washed beforehand with a detergent, pure water, and an organic solvent, and then the material of the device electrode is deposited. For example, a vacuum film forming technique such as a vapor deposition method or a sputtering method may be used.) Thereafter, the deposited electrode material is patterned by using photolithography and etching techniques to form a pair of element electrodes shown in FIG. (102 and 103) are formed.

Next, a conductive thin film 104 is formed as shown in FIG. In forming, first, an organic metal solution is applied to the substrate (a), dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. Here, the organometallic solution is a solution of an organometallic compound whose main element is a material of fine particles used for a conductive thin film (specifically, in this embodiment, Pd is used as a main element.
Was used. In the embodiment, a dipping method is used as a coating method, but other methods such as a spinner method and a spray method may be used. In addition, as a method for forming a conductive thin film formed of a fine particle film, a method other than the method of applying an organometallic solution used in the present embodiment, for example, a vacuum deposition method, a sputtering method, or a chemical vapor deposition method Method may be used.

Next, as shown in FIG. 9C, an appropriate voltage is applied between the element electrodes 102 and 103 from the forming power supply 110 to conduct an energizing forming process, thereby forming the electron emitting portions 105.

The energization forming treatment is to energize the conductive thin film 104 made of a fine particle film, and to appropriately break, deform or alter the part of the conductive thin film 104 to change to a structure suitable for emitting electrons. Processing.

A portion of the conductive thin film made of the fine particle film, which has been suitably changed to emit electrons (that is, the electron emitting portion 1)
In (05), an appropriate crack is formed in the thin film. Note that the electric resistance measured between the device electrodes 102 and 103 after the formation is significantly increased as compared with before the electron emission portion 105 is formed. In order to explain the energizing method in more detail, FIG.
An example of an appropriate voltage waveform applied from 0 is shown. When forming a conductive thin film made of a fine particle film, a pulse voltage is preferable. In the case of the present embodiment, a triangular wave pulse having a pulse width T1 is applied at a pulse interval T2 as shown in FIG. It was applied continuously. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. Also, a monitor pulse Pm for monitoring the state of formation of the electron-emitting portion 105
Was inserted between triangular wave pulses at appropriate intervals, and the current flowing at that time was measured by the ammeter 111.

In the embodiment, for example, 10-5T
In a vacuum atmosphere of about orr, for example, the pulse width T
1 was set to 1 millisecond, the pulse interval T2 was set to 10 milliseconds, and the peak value Vpf was increased by 0.1 V for each pulse. Then, each time five triangular waves were applied, the monitor pulse Pm was inserted at a rate of once. In order not to adversely affect the forming process, the monitor pulse voltage Vpm
Was set to 0.1V. Then, the device electrodes 102 and 10
When the electric resistance during the period 3 becomes 1 × 10 6 Ω, that is, when the current measured by the ammeter 111 when the monitor pulse is applied becomes 1 × 10 −7 A or less, the energization related to the forming process is terminated. did.

The above method is a preferable method for the surface conduction electron-emitting device according to the present embodiment. For example, the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the element electrode interval L is changed. In such a case, it is desirable to appropriately change the energization conditions accordingly.

Next, as shown in FIG. 12D, an appropriate voltage is applied between the element electrodes 102 and 103 from the activating power supply 112, and a current activation process is performed to improve the electron emission characteristics. I do.

The energization activation process is a process of energizing the electron emitting portion 105 formed by the energization forming process under appropriate conditions and depositing carbon or a carbon compound in the vicinity thereof (see FIG. In 12, the deposit made of carbon or carbon compound is
13 schematically). Note that by performing such an energization activation process, the emission current at the same applied voltage can be typically increased by 100 times or more compared to before the activation process is performed.

Specifically, 10-4 to 10-5To
By periodically applying a voltage pulse in a vacuum atmosphere within the range of rr, carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere is deposited. The deposit 113 is any of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a compound thereof, and has a thickness of 500 Å or less, more preferably 300 Å or less.

FIG. 14A shows an example of an appropriate voltage waveform applied from the activation power supply 112 in order to describe the energization method at this time in more detail. In the present embodiment, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically, but specifically, the voltage Vac of the rectangular wave is 1
4V, pulse width T3 is 1 ms, pulse interval T4 is 1
For example, 0 millisecond. Note that the above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly. FIG.
An anode electrode 114 shown in (d) is for supplementing an emission current Ie emitted from the surface conduction electron-emitting device.
A DC high voltage power supply 115 and an ammeter 116 are connected. When the activation process is performed after the substrate 101 is incorporated into the display panel, the phosphor screen of the display panel is used as the anode electrode 114. Activation power supply 112
During the application of the voltage from, the emission current Ie is measured by the ammeter 116 to monitor the progress of the energization activation process, and controls the operation of the activation power supply 112. An example of the emission current Ie measured by the ammeter 116 is shown in FIG. 14B. When the pulse voltage is started to be applied from the activation power supply 115, the emission current Ie increases with time, but eventually saturates. Almost no increase. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 115 is stopped, and the energization activation process ends.

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. Is desirable.

As described above, the plane type surface conduction electron-emitting device shown in FIG. 12E was manufactured.

The element structure and manufacturing method of the planar surface conduction electron-emitting device have been described above. Next, the characteristics of the element used in the display device of the present embodiment will be described.

FIG. 14 shows typical (emission current Ie) vs. (device applied voltage Vf) characteristics and (device current If) vs. (device applied voltage Vf) characteristics of the elements used in the display device of the present embodiment. Here is a simple example. Note that the emission current Ie is significantly smaller than the device current If, and it is difficult to show them on the same scale, and these characteristics are changed by changing design parameters such as the size and shape of the device. The two graphs are shown in arbitrary units.

The elements used in the display device of this embodiment are as follows:
The emission current Ie has three characteristics described below.

First, a certain voltage (this is referred to as a threshold voltage V
Called th. ) When a voltage of the above magnitude is applied to the element, Ie sharply increases. On the other hand, at a voltage lower than the threshold voltage Vth, the emission current Ie is hardly detected. That is, with respect to the emission current Ie, a clear threshold voltage Vth
It is a non-linear element having.

Secondly, since the emission current Ie changes depending on the voltage Vf applied to the element, the emission current Ie depends on the voltage Vf.
The magnitude of e can be controlled.

Third, since the response speed of the current Ie emitted from the element is faster with respect to the voltage Vf applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time during which the voltage Vf is applied. Can control.

Because of the characteristics described above, the surface conduction electron-emitting device could be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, display can be performed by sequentially scanning the display screen by using the first characteristic. That is, the threshold voltage Vth is applied to the element being driven in accordance with the desired light emission luminance.
The above voltage is appropriately applied, and a voltage lower than the threshold voltage Vth is applied to the non-selected elements. By sequentially switching the electron-emitting devices to be driven in this manner, it is possible to sequentially scan the display screen and display. Also,
By using the second property or the third property,
Since the emission luminance can be controlled, gradation display can be performed.

Next, the structure of a multi-electron beam source in which the above-described surface conduction electron-emitting devices are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 17 is a cross-sectional view showing a cross-sectional shape along the line AA 'in FIG. 8, and shows a cross-sectional shape of one electron-emitting device of the multi-electron beam source used for the display panel 10 of the present embodiment. Is shown.

On the substrate 101, surface conduction type emission elements similar to those shown in FIG. 12E are arranged, and these elements are connected to the row-direction wiring 13 and the column-direction wiring 14, and are simply arranged. They are arranged in a matrix. Note that an insulating layer (not shown) is formed between the electrodes at the intersections of the row direction wirings 13 and the column direction wirings 14, so that electrical insulation is maintained.

The method of driving the electron source of the present embodiment prepared as described above will be described below.

For example, in the display device having the configuration shown in FIG. 1, a voltage (Vx) according to a scanning signal is input to the row direction wiring 13 by the driving circuit 81 (a), and the driving circuit is input to the column direction wiring 14. A voltage (referred to as Vy) according to the modulation signal is input from 81 (b), and Vx> Vy.
As described above, the area of the beam spot 39 increases as described above.

[0122]

EXAMPLES (Example 1) In this example, an electron source and an image forming apparatus were prepared according to the above-described embodiment.

The matrix configuration was formed as shown in FIG. 7, and the shape of the phosphor was formed as shown in FIG. 16 corresponding to FIG. 6B.

Referring to FIG. 3, in this embodiment, the voltage (Vf) applied between the device electrodes 32 and 33 is 1
4 V (Vx = -7 V, Vy = -7 V), and the distance between the element substrate 11 and the inner surface of the face plate 17 is 4 m.
m, acceleration voltage V of electrons applied to face plate 17
When a was 6 KV, the length of the beam spot 39 in the X direction was about 600 μm. In the conventional stripe-shaped phosphor of FIG. 6A and the phosphor of the present invention, the phosphor of which the beam hits a desired position differs from the phosphor of FIG. Although it is shown as shifted, as is clear from this figure, the portion where the beam hits the adjacent phosphor is different.

Therefore, by using the phosphor of the shape of the present invention, both the color shift of the beam and the decrease in the luminance due to the displacement in the X direction were smaller than those in the related art. (Embodiment 2) FIG. 6C is a plan view of a phosphor of an image forming apparatus according to a second embodiment of the present invention. This is an example in which one diamond-color phosphor is shifted by a half pitch in the X direction in the adjacent y-direction line, the pitch in the y direction is set to one pitch, and the phosphor is a diamond shorter in the X direction. The method of manufacturing the electron source and the method of manufacturing and driving the image forming apparatus in the second embodiment are the same as those in the first embodiment, and a description thereof will be omitted.
However, as for the arrangement of the electron sources, as shown in FIG. 8, the elements are arranged one by one in the x direction after the wiring in the Y direction is skipped one by one, and the phosphor is shown in FIG. One used.

As is apparent from comparison with the first embodiment, the pitch in the y direction is shorter in the second embodiment.

According to the arrangement of the phosphors (pixels) of the second embodiment, the pixel density in the Y direction can be increased to increase the use efficiency of the emitted electrons, and the luminance per unit area can be increased. In addition to having the same advantages as the first embodiment, the phosphors of each color are dispersed on a plane without being arranged in a specific direction of the screen. Thereby, the resolution particularly in the oblique direction is improved, and the resolution of the entire screen can be made uniform. As a result, an image forming apparatus suitable for graphic display and the like was obtained.

[0128]

As described above, according to the present invention,
Since the shape of the phosphor is a rhombus, which is a shape corresponding to the distribution characteristics of the electrons emitted from the electron source, the displacement in the X direction caused when the electron source substrate and the face plate are sealed, and the voltage applied to the high voltage terminal The color misregistration caused by the beam misregistration due to the change of the color is greatly reduced as compared with the related art.

[Brief description of the drawings]

FIG. 1 is an exemplary perspective view of a display panel of an image display device according to an embodiment of the present invention, in which a part of a display panel is cut away;

FIG. 2 is a plan view illustrating a phosphor array of a face plate of the display panel according to the embodiment of the present invention.

FIGS. 3A and 3B are a perspective view and a cross-sectional view of an electron emission test system using the surface conduction electron-emitting device shown in the plan view of this embodiment.

FIG. 4 is a schematic view showing the shape of an electron beam spot emitted from a planar surface conduction electron-emitting device of the present embodiment.

FIG. 5 is a schematic diagram showing a state of an electron beam spot on a conventional phosphor screen.

FIG. 6 is a comparison diagram of an electron beam irradiation position of a conventional phosphor and an electron beam irradiation position of the phosphor of the present invention.

FIG. 7 is a diagram showing a wiring example of an electron source.

FIG. 8 is a diagram showing another wiring example of an electron source.

FIG. 9 is a block diagram illustrating a configuration of a display device using the display panel of this embodiment.

FIGS. 10A and 10B are a plan view and a cross-sectional view, respectively, of a planar type surface conduction electron-emitting device used in the present embodiment.

FIG. 11 is a cross-sectional view showing a step of manufacturing the planar surface-conduction electron-emitting device of the embodiment.

FIG. 12 is a diagram showing an applied voltage waveform in energization forming processing in the present embodiment.

FIG. 13 is a diagram showing an applied voltage waveform (a) and a change in emission current Ie during the energization activation process in the present embodiment.

FIG. 14 is a graph showing typical characteristics of the surface conduction electron-emitting device used in the present embodiment.

FIG. 15 is a schematic diagram of a phosphor screen of the image forming apparatus according to the first embodiment of the present invention.

FIG. 16 is a schematic diagram of a phosphor screen of the image forming apparatus according to the second embodiment of the present invention.

FIG. 17 is a sectional view of the substrate of the multi-electron beam source shown by AA ′ in FIG. 7;

FIG. 18 is a view showing an example of a conventional surface conduction electron-emitting device.

FIG. 19 is a sectional view showing an example of a conventional FE element.

FIG. 20 is a diagram showing an example of a conventional MIM element.

FIG. 21 is an equivalent circuit diagram illustrating a wiring method of an electron-emitting device in this embodiment.

FIG. 22 is a schematic view of a phosphor screen of a conventional image device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Display panel 11 Substrate 12 Cold cathode element 13 Row wiring 14 Column wiring 15 Rear plate 16 Side wall 17 Face plate 18 Phosphor film 19 Metal back 21 Phosphor 22 Black conductor 30 Driving power supply 32 Element electrode (low potential side) Reference Signs List 33 element electrode (high potential side) 34 electron emission section 35 glass plate 36 power supply for acceleration voltage 37 connection electrode 39 spot formed by electron beam 41 tip section 42 tail section 43 central axis 80 display panel having multiple electron sources 81 drive Circuit 82 Display panel controller 83 Multiplexer 84 Decoder 85 Input / output interface circuit 86 CPU 87 Image generation circuit 88, 89, 90 Image memory interface circuit 91 Image input interface circuit 92, 93 TV signal Receiving circuit 94 Input unit 101 Substrate 102, 103 Device electrode 104 Conductive thin film 105 Electron emission unit 106 Deposit 110 Forming power supply 111 Ammeter 112 Activation power supply 113 Deposit 114 Anode electrode 115 DC high voltage power supply 116 Ammeter 171 Substrate 174 Conductive thin film 175 Electron emission section 181 Substrate 182 Emitter wiring 183 Emitter cone 184 Insulating layer 185 Gate electrode 191 Substrate 192 Lower wiring 193 Insulating layer 194 Upper wiring 201 Schematic cold cathode element 202 Row wiring 203 Column wiring 204 Schematic Resistance of typical row direction wiring 205 Wiring resistance of typical column direction wiring

Claims (5)

[Claims] 1. A cold cathode type having an electron emission portion between a pair of opposed device electrodes having a linear gap formed on a substrate and emitting electrons by applying a voltage between the device electrodes. An image display device comprising: an electron source in which electron-emitting devices are arranged in a matrix; a phosphor that forms an image of electrons emitted from the plurality of electron-emitting devices; and a black conductor. An image display device, wherein a body is arranged corresponding to each of the electron-emitting devices, and the phosphor has a diamond shape. 2. The image forming apparatus according to claim 1, wherein said phosphor and said black conductor are arranged in the same shape. 3. The image forming apparatus according to claim 1, wherein the phosphors are arranged so as to be shifted by half a length of a pixel in a row direction for each row. 4. A phosphor member, wherein the planar shape of the phosphor is a rhombus, the periphery of the phosphor has a black stripe, and the phosphors are arranged in a short axis direction of the rhombus. 5. The phosphors of R, G, and B colors are sequentially arranged in the short-axis direction of the rhombus, and the short-axis interval between the adjacent phosphor and the short-axis in the long-axis direction of the rhombus is shifted by a half pitch. The fluorescent member according to claim 4, wherein: