JP3162968B2 - Electron source and driving method thereof, image forming apparatus using the same, and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source, a method of driving the same, an image forming apparatus using the same, and a method of manufacturing the same. More particularly, the present invention relates to an electron source having an electron-emitting device and a display device as an application thereof. And the like. Also,
The present invention relates to a driving method and a manufacturing method.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a hot cathode device and a cold cathode device, are known. Among them, the cold cathode device includes, for example, a field emission device (hereinafter, referred to as FE type) and a metal / insulating layer / metal type emission device (hereinafter, MI).
M-type), surface conduction electron-emitting devices, and the like.

As an example of the FE type, for example, WPDyke
& W.W.Dolan, "Field emission", Advance in Electron Ph
ysics, 8, 89 (1956) or CASpindt, "Physic
al properties of thin-film field emission cathodes
withmolybdenium cones ", J. Appl. Phys., 47, 5248 (197
6) are known. Further, as an example of the MIM type, for example, CAMead, "Operation of tunnel-emissio
n Devices, J. Appl. Phys., 32, 646 (1961) and the like are known.

[0004] Further, as a surface conduction type emission element, for example,
For example, M.I.Elinson, RadioEng.Electron Phys., 10,129
0, (1965) and other examples described later. Surface conduction
The type emission device is a thin film with a small area formed on a substrate.
Phenomenon in which electron emission occurs when a current flows in parallel to a plane
Is used. As this surface conduction type emission element
Is SnO by Elinson et al._Two Using thin film
In addition to those using Au thin film [G. Dittmer: "Thin Solid F
ilms ", 9,317 (1972)] and In_TwoO _Three / SnO_Two By thin film
Stuff [M.Hartwell and C.G.Fonstad: "IEEE Trans.EDCon
f. ", 519 (1975)] and those using carbon thin films [Hisashi Araki
Others: Vacuum, Vol. 26, No. 1, 22 (1983)]
ing.

[0005] As a typical example of the element structure of these surface conduction electron-emitting devices, FIG. Hartwell
1 shows a plan view of an element according to the present invention. In the figure, 3001
, A substrate; and 3004, a conductive thin film made of metal oxide formed by sputtering. The conductive thin film 3004 is formed in an H-shaped planar shape as shown. An electron emission portion 3005 is formed by performing an energization process called energization forming described later on the conductive thin film 3004. The interval L in the figure is 0.5 to 1 [mm], and W is 0 to 1 [mm].
It is set at 1 [mm].

[0006] For convenience of illustration, the electron emitting portion 3005 is shown.
Is shown in a rectangular shape at the center of the conductive thin film 3004,
This is a schematic one, and does not faithfully represent the actual position or shape of the electron-emitting portion. M. Hart
In the surface conduction electron-emitting device described above, including the device by Well et al.
In general, the electron-emitting portion 3005 is formed by performing an energization process called energization forming on 004. In other words, the energization forming means that a constant DC voltage or a DC voltage that increases at a very slow rate of, for example, about 1 V / min is applied to both ends of the conductive thin film 3004 to energize the conductive thin film 3004. Is locally destroyed, deformed, or altered to form an electron emitting portion 3005 in a state of high electrical resistance. Note that a crack is generated in a part of the conductive thin film 3004 that is locally broken, deformed, or altered. When an appropriate voltage is applied to the conductive thin film 3004 after the energization forming, electron emission is performed in the vicinity of the crack.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be formed over a large area because of its simple structure and easy manufacture. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied. As for the application of the surface conduction electron-emitting device, for example, image forming apparatuses such as image display apparatuses and image recording apparatuses, and charged beam sources have been studied.

In particular, as an application to an image display device, for example, US Pat.
As disclosed in US Pat. No. 2,575,551, an image display device using a combination of a surface conduction electron-emitting device and a phosphor that emits light by irradiation with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle.

[0009]

The present inventors have attempted surface conduction type emission devices having various materials, manufacturing methods and structures, including the above-mentioned conventional example. Further, a multi-electron beam source in which a large number of surface conduction electron-emitting devices are arranged, and
We have been studying image display devices using this multi-electron beam source.

The inventors have tried a multi-electron beam source by the electric wiring method shown in FIG. 2, for example. That is, it is a multi-electron beam source in which a large number of surface conduction emission devices are two-dimensionally arranged and these devices are wired in a matrix as shown in the figure. In the figure, 4001 schematically shows a surface conduction electron-emitting device, 4002 shows a row direction wiring, and 4003 shows a column direction wiring. Row direction wiring 400
2 and the column wiring 4003 actually have a finite electric resistance, but in the drawing, the wiring resistance 400
4 and 4005. The above-described wiring method is called simple matrix wiring.

Although a 6 × 6 matrix is shown for convenience of illustration, the size of the matrix is not limited to this. For example, in the case of a multi-electron beam source for an image display device, a desired image display is performed. Elements that are sufficient to perform are arranged and wired. In a multi-electron beam source in which the surface conduction electron-emitting devices are arranged in a simple matrix wiring, an appropriate electric signal is applied to the row wiring 4002 and the column wiring 4003 in order to output a desired electron beam. For example, to drive a surface conduction electron-emitting device of an arbitrary row in a matrix, a selection voltage Vs is applied to a row-directional wiring 4002 of a selected row, and at the same time, a row-directional wiring 4002 of an unselected row is applied. Applies a non-selection voltage Vns. In synchronization with this, a drive voltage Ve for outputting an electron beam is applied to the column wiring 4003. According to this method, if the voltage drop due to the wiring resistances 4004 and 4005 is ignored, a voltage of Ve−Vs is applied to the surface conduction type emission element of the selected row, and the surface conduction type emission element of the non-selected row is used. Is applied with a voltage of Ve−Vns. If Ve, Vs, and Vns are set to voltages of appropriate magnitudes, an electron beam of a desired intensity should be output only from the surface conduction electron-emitting device of the selected row, and a different drive voltage is applied to each of the column wirings. If Ve is applied, each of the elements in the selected row should output a different intensity electron beam. Further, since the response speed of the surface conduction electron-emitting device is high, if the length of time for applying the driving voltage Ve is changed, the length of time for outputting the electron beam should be changed.

Therefore, a multi-electron beam source in which surface conduction electron-emitting devices are arranged in a simple matrix has a variety of applications. For example, if an electric signal corresponding to image information is appropriately applied, the multi-electron beam source can be used as an electron source for an image display device. It can be suitably used. Next, characteristics of the surface conduction electron-emitting device will be described. FIG. 3 shows a typical example of the characteristics of the emission current Ie with respect to the applied voltage Vf of the surface conduction electron-emitting device.
The surface conduction electron-emitting device has the following two characteristics with respect to the emission current Ie. First, when a voltage higher than a certain voltage (hereinafter referred to as a threshold voltage Vth) is applied to the element, the emission current Ie rapidly increases.
At a voltage lower than th, the emission current Ie is hardly detected. Second, since the emission current Ie changes depending on the voltage Vf applied to the element, the magnitude of the emission current Ie can be controlled by the voltage Vf. Utilizing these characteristics, the applied voltage Vf
, The light emission luminance can be controlled, so that gradation display can be performed.

Next, with reference to FIG. 4, a description will be given of a gradation control method by voltage control in the case of a typical example of the characteristic of the emission current Ie with respect to the applied voltage Vf of the surface conduction electron-emitting device. In FIG. 4, in the case where the emission current Ie outputs n gradations (Ie1 to Ien) for n gradation display,
The required voltages (Vf1 to Vfn) required at that time are shown. Here, in order to control a large emission current (around Ien), it is necessary to control a minute voltage around the applied voltage Vfn.

This indicates that as the gradation becomes higher, it becomes more difficult to control the minute voltage of the high applied voltage section. For this reason, necessary gradation display cannot be performed in some cases, and this has been a major problem in applying such a multi-electron beam source to a display device or the like. On the other hand, when the surface conduction type emission device is subjected to energization forming to form an electron emission portion, an excessive current flows into the surface conduction type emission device, and a surface conduction type emission device having extremely poor electron emission characteristics is formed. There was a problem.

That is, an object of the present invention is to provide an electron source which overcomes the above-mentioned problems, a driving method thereof, an image forming apparatus using the same, and a manufacturing method thereof.

[0016]

In order to achieve the above object, an electron source and a method of driving the same, an image forming apparatus using the same, and a method of manufacturing the same according to the present invention have the following configurations. That is, in the method of driving the electron sources in which the plurality of surface conduction electron - emitting devices are connected to the row-direction wiring and the column-direction wiring and arranged in a matrix on the substrate, a mark for performing voltage modulation driving is provided.
Emission current vs. applied voltage increases linearity
To maintain the constant resistance state up to the specified voltage value,
In order to suppress the overcurrent of the surface conduction electron-emitting device,
When a voltage higher than the constant voltage value is applied,
Nonlinear element having piezo-current characteristics, and the nonlinear element
The surface conduction emission device connected in series to the
A voltage modulation signal is transmitted through the direction wiring and the column direction wiring.
Apply .

Another invention is directed to a plurality of surface conduction emission devices.
The element is connected to the row direction wiring and the column direction wiring, and
Voltage modulation drive with electron sources arranged in a matrix above
The relationship between the applied current and the emission current during
Maintain constant resistance state up to specified voltage value to increase
To suppress the overcurrent of the surface conduction electron-emitting device
When a voltage equal to or higher than the predetermined voltage value is applied,
A non-linear element having a voltage-current characteristic to maintain
It has a structure to be connected in series to the conduction type emission element .

[0018]

[0019]

According to another aspect of the present invention, there is provided the electron source described above, and an image forming member for forming an image by irradiating electrons emitted from the electron source. Another aspect of the present invention, a plurality of tables
Surface conduction electron-emitting device is connected to row-direction wiring and column-direction wiring
For producing electron sources arranged in rows and columns on a substrate
At the same time, maintaining the constant resistance state up to the predetermined applied voltage value
In order to suppress overcurrent, a voltage higher than the predetermined voltage value is used.
A non-linear element that is in a constant current state when
In series with the thin film for forming the electron emission part to be a surface conduction type emission device
Connected to each other and connected in series to the thin film for forming an electron emission portion.
And applying a pulse-like voltage signal to the nonlinear element
By doing so, the electron-emitting portion is formed on the thin film for forming the electron-emitting device.
And an energization forming step of forming

[0021]

Embodiments of the present invention will be described below in detail with reference to the drawings. First, a surface conduction electron-emitting device used in carrying out the present embodiment will be described. The material and structure of the surface conduction electron-emitting device used in this embodiment are not particularly limited, and may be, for example, those described in the related art. However, the inventors have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have excellent electron-emitting characteristics and can be easily manufactured. Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance, large-screen image display device. (Preferred form of surface conduction electron-emitting device) The basic structure of a preferable surface conduction electron-emitting device includes two structures of a planar type and a vertical type.

Next, a method of manufacturing the multi-electron beam source used for the display panel of the above embodiment will be described. The multi-electron beam source used in the image display device of the present embodiment is not limited as long as it is an electron source in which surface conduction electron-emitting devices are arranged in a simple matrix, and the material, shape, and manufacturing method of the surface conduction electron-emitting device are not limited. Therefore, first, a basic configuration, a manufacturing method, and characteristics of a preferable surface conduction type emission element are described,
After that, the structure of a multi-electron beam source in which many elements are arranged in a simple matrix will be described. (Suitable device configuration and manufacturing method of surface conduction type emission device) The typical configuration of the surface conduction type emission device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is a flat type or a vertical type.
Kinds are given. (Flat-type surface conduction electron-emitting device) First, an element configuration and a manufacturing method of a flat-type surface conduction electron-emitting device will be described. FIGS. 5 and 6 are a plan view (FIG. 5) and a cross-sectional view (FIG. 6) for explaining the configuration of the planar type surface conduction electron-emitting device. In the figure, 1101 is a substrate, 1102 and 1
103, a device electrode; 1104, a conductive thin film; 1105, an electron-emitting portion formed by an energization forming process;
Reference numeral 13 denotes a thin film formed by the activation process.

As the substrate 1101, for example, various glass substrates such as quartz glass and blue plate glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO ₂ is formed on the various substrates described above. A stacked substrate, a semiconductor substrate including a silicon substrate, or the like can be used. The device electrodes 1102 and 1103 provided on the substrate 1101 so as to be opposed to the substrate surface in parallel are formed of a conductive material. For example, Ni, Cr, Au, Mo, W, Pt, T
metals such as i, Cu, Pd, Ag and the like, alloys of these metals, metal oxides such as In ₂ O ₃ -SnO ₂ , and semiconductors such as polysilicon;
A material may be appropriately selected from the above and used. An electrode can be easily formed by using a combination of a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching. However, the electrode can be formed by other methods (for example, printing technique). I can't wait.

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode spacing L is usually designed by selecting an appropriate value from the range of several hundreds of angstroms to several hundreds of micrometers. It is in the range of ten micrometers. Further, regarding the thickness d of the device electrode,
Usually, an appropriate numerical value is selected from the range of several hundred angstroms to several micrometers.

A fine particle film is used for the conductive thin film 1104. The fine particle film mentioned here is a film containing many fine particles as a constituent element (including an island-shaped aggregate).
I mean If you examine the microparticle film microscopically, usually
A structure in which the individual fine particles are spaced apart, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.

The particle size of the fine particles used for the fine particle film is in the range of several Angstroms to several thousand Angstroms, and preferably in the range of 10 Angstroms to 200 Angstroms. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, the device electrode 11
02, or 1103, conditions necessary for satisfactorily performing energization forming described later, conditions necessary for setting the electric resistance of the fine particle film itself to an appropriate value described later. , And so on.

More specifically, the setting is made in the range of several angstroms to several thousand angstroms, and the most preferable is between 10 angstroms and 500 angstroms. Materials that can be used to form the fine particle film include, for example, Pd, Pt, R
u, Ag, Au, Ti, In, Cu, Cr, Fe, Z
metals such as n, Sn, Ta, W, Pb, etc .; PdO, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O
Oxides such as ₃ , HfB ₂ , ZrB
Boride such as ₂ , LaB ₆ , CeB ₆ , YB ₄ , GdB ₄ , TiC, ZrC, HfC, TaC,
Carbides such as SiC, WC, etc., TiN,
Nitrides such as ZrN, HfN, etc., Si,
Examples include semiconductors such as Ge, carbon, and the like, and are appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film.
It was set to be included in the range of 10 3 to 10 7 [Ohm / sq]. Note that since the conductive thin film 1104 and the device electrodes 1102 and 1103 are desirably electrically connected well, they have a structure in which a part of each of them overlaps. In the example of FIGS. 5 and 6B, the layers are stacked from the bottom in the order of the substrate, the element electrode, and the conductive thin film. However, in some cases, the layers are stacked in the order of the substrate, the conductive thin film, and the element electrode from the bottom. I can do it.

The electron-emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has a higher electrical property than the surrounding conductive thin film. The crack is formed by performing a later-described energization forming process on the conductive thin film 1104. Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIGS.

The thin film 1113 is a thin film made of carbon or a carbon compound and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process. The thin film 1113 is any one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 Å or less, and more preferably 300 Å or less. preferable.

Since it is difficult to accurately show the actual position and shape of the thin film 1113, it is schematically shown in FIGS. In the plan view (FIG. 5), an element in which a part of the thin film 1113 is removed is shown. The basic configuration of the preferred elements has been described above. In the embodiment, the following elements are used.

That is, blue glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of the device electrode was 1000 [angstrom], and the electrode interval L was 2 [micrometer]. Pd or PdO was used as the main material of the fine particle film, the thickness of the fine particle film was about 100 [angstrom], and the width W was 100 [micrometer].

Next, a description will be given of a method of manufacturing a suitable flat surface conduction electron-emitting device. 7A to 7E are cross-sectional views for explaining a manufacturing process of the surface conduction electron-emitting device. The notation of each member is the same as that in FIG. 1) First, as shown in FIG. 7A, device electrodes 1102 and 1103 are formed on a substrate 1101.

Before formation, the substrate 1
After sufficiently washing 101 with a detergent, pure water and an organic solvent,
The material of the device electrode is deposited. (As a deposition method, for example, a vacuum film forming technique such as a vapor deposition method or a sputtering method may be used.) Then, the deposited electrode material is patterned by using a photolithography / etching technique, and is shown in FIG. 7A. A pair of device electrodes (1102 and 110)
Form 3).

2) Next, as shown in FIG. 7B, a conductive thin film 1104 is formed. In formation, first, an organic metal solution is applied to the substrate of FIG. 7A, dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. Here, the organometallic solution is a solution of an organometallic compound whose main element is a material of fine particles used for the conductive thin film.
(Specifically, in the present embodiment, Pd is used as a main element. In the embodiment, a dipping method is used as a coating method, but other methods such as a spinner method and a spray method may be used. As a method for forming a conductive thin film made of a fine particle film, a method other than the method of applying an organometallic solution used in the present embodiment, for example, a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method Method may be used.

3) Next, as shown in FIG. 7C, an appropriate voltage is applied between the device electrodes 1102 and 1103 from a forming power supply 1110, and an energization forming process is performed to form an electron emission portion 1105. The energization forming process is a process of energizing the conductive thin film 1104 made of a fine particle film, and appropriately breaking, deforming, or altering a part of the conductive thin film 1104 to change the structure into a structure suitable for emitting electrons. That is. In a portion of the conductive thin film made of the fine particle film which has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 1105), an appropriate crack is formed in the thin film. Note that, after the formation of the electron emission portion 1105, the device electrode 110 is formed after the formation.
The electrical resistance measured between 2 and 1103 increases significantly.

FIG. 8 shows an example of an appropriate voltage waveform applied from the forming power supply 1110 in order to explain the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulse-like voltage is preferable. In the case of the present embodiment, a triangular wave pulse having a pulse width T1 is continuously generated at a pulse interval T2 as shown in FIG. Was applied. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. In addition, monitor pulses Pm for monitoring the state of formation of the electron-emitting portion 1105 were inserted at appropriate intervals between the triangular-wave pulses, and the current flowing at that time was measured by the ammeter 1111.

In the embodiment, for example, in a vacuum atmosphere of about 10 −5 [torr],
For example, the pulse width T1 is 1 [millisecond], the pulse interval T2
Was set to 10 [milliseconds], and the peak value Vpf was increased by 0.1 [V] for each pulse. Then, the monitor pulse Pm was inserted at a rate of one every time five triangular waves were applied. The monitor pulse voltage Vpm was set to 0.1 [V] so as not to adversely affect the forming process. Then, when the electric resistance between the element electrodes 1102 and 1103 becomes 1 × 10 6 [ohm], that is, the current measured by the ammeter 1111 when the monitor pulse is applied becomes 1 × 10 −7 [A] or less. At this stage, the energization related to the forming process was terminated.

The above method is a preferable method for the surface conduction electron-emitting device of the present embodiment. For example, the design of the surface conduction electron-emitting device such as the material and thickness of the fine particle film or the element electrode interval L is changed. In such a case, it is desirable to appropriately change the energization conditions accordingly. 4) Next, as shown in FIG.
After that, an appropriate voltage is applied between the device electrodes 1102 and 1103, and the activation process is performed to improve the electron emission characteristics.

The energization activation process is a process of energizing the electron emitting portion 1105 formed by the energization forming process under appropriate conditions and depositing carbon or a carbon compound in the vicinity thereof. (In the figure, a deposit made of carbon or a carbon compound is schematically shown as a member 1113.) By performing the activation process, the emission current at the same applied voltage is typically smaller than that before the activation. Specifically, it can be increased by 100 times or more.

Specifically, 10 minus the fourth power to 1
By applying a voltage pulse periodically in a vacuum atmosphere within the range of 0 to the fifth power [torr], carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere is deposited. The deposit 1113 is any of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500.
[Angstrom] or less, more preferably 300 [angstrom] or less.

FIG. 9A shows an example of an appropriate voltage waveform applied from the activation power supply 1112 in order to describe the energization method in more detail. In the present embodiment, the energization activation process is performed by periodically applying a rectangular wave of a constant voltage. Specifically, the voltage Vac of the rectangular wave is 14 [V], and the pulse width T3 is 1 [Millisecond], pulse interval T4 is 10
[Milliseconds].

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. Is desirable. 11 shown in FIG. 7D
Reference numeral 14 denotes an anode electrode for capturing an emission current Ie emitted from the surface conduction electron-emitting device, to which a DC high voltage power supply 1115 and an ammeter 1116 are connected. (If the activation process is performed after the substrate 1101 is incorporated into the display panel, the phosphor screen of the display panel is used as the anode electrode 1114.) The activation power supply 111
While the voltage is applied from step 2, the emission current I is measured by the ammeter 1116.
e to monitor the progress of the energization activation process,
The operation of the activation power supply 1112 is controlled. Ammeter 111
FIG. 9B shows an example of the emission current Ie measured in FIG.
When the pulse voltage is started to be applied from the activation power supply 1112, the emission current Ie increases with time, but eventually saturates and hardly increases. As described above, when the emission current Ie is almost saturated, the activation power supply 1112 is activated.
Is stopped, and the energization activation process ends.

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. Is desirable. As described above, the plane type surface conduction electron-emitting device shown in FIG. 7E was manufactured. (Vertical type surface conduction electron-emitting device) Next, another typical structure of a surface conduction electron-emitting device in which an electron-emitting portion or its periphery is formed of a fine particle film, that is, the structure of a vertical surface conduction electron-emitting device Will be described.

FIG. 10 is a schematic cross-sectional view for explaining the basic structure of the vertical type.
202 and 1203 are device electrodes, 1206 is a step forming member, 1204 is a conductive thin film using a fine particle film, 1205
Are electron-emitting portions formed by an energization forming process;
213 is a thin film formed by the activation process.
The difference between the vertical type and the flat type described above is that one of the element electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 is connected to the step forming member 1212.
06 is covered. Therefore, FIG.
The element electrode interval L in the planar type shown in FIG. 6 is set as the step height Ls of the step forming member 1206 in the vertical type. The substrate 1201, the device electrodes 1202 and 1
As for 203 and the conductive thin film 1204 using the fine particle film, the materials listed in the description of the flat type can be used in the same manner. For the step forming member 1206, an electrically insulating material such as SiO ₂ is used.

Next, a method of manufacturing a vertical surface conduction electron-emitting device will be described. 11A to 11F are cross-sectional views for explaining a manufacturing process, and the notation of each member is the same as FIG. 1) First, as shown in FIG. 11A, an element electrode 1203 is formed on a substrate 1201. 2) Next, as shown in FIG. 11B, an insulating layer for forming a step forming member is laminated. The insulating layer is made of, for example, Si
O ₂ may be deposited by a sputtering method, but another film formation method such as a vacuum evaporation method or a printing method may be used.

3) Next, as shown in FIG. 11C, a device electrode 1202 is formed on the insulating layer. 4) Next, as shown in FIG. 11D, a part of the insulating layer is removed by using, for example, an etching method, and the device electrode 1203 is removed.
To expose. 5) Next, as shown in FIG. 11E, a conductive thin film 1204 using a fine particle film is formed. For the formation, as in the case of the flat type, a film forming technique such as a coating method may be used.

6) Next, as in the case of the flat type, the energization forming process is performed to form an electron emitting portion.
(A process similar to the planar type energization forming process described with reference to FIG. 7C may be performed.) 7) Next, as in the case of the planar type, an energization activation process is performed, and carbon is deposited near the electron emission portion. Alternatively, a carbon compound is deposited. (The same process as the planar activation process described with reference to FIG. 7 may be performed.) As described above, the vertical surface conduction electron-emitting device shown in FIG. 11F was manufactured. (Characteristics of the surface conduction electron-emitting device used in the display device)
The device configuration and manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described. Next, the characteristics of the devices used in the display device will be described.

FIG. 12 shows typical examples of (emission current Ie) versus (device applied voltage Vf) characteristics and (device current If) versus (device applied voltage Vf) characteristics of the device used in the display device. . Note that the emission current Ie is significantly smaller than the element current If, and it is difficult to show the same current on the same scale.
Since these characteristics are changed by changing design parameters such as the size and shape of the element, the two graphs are shown in arbitrary units.

The element used in the display device has the following three characteristics with respect to the emission current Ie. Primarily,
When a voltage higher than a certain voltage (hereinafter referred to as a threshold voltage Vth) is applied to the element, the emission current Ie sharply increases. On the other hand, when the voltage is lower than the threshold voltage Vth, the emission current Ie is increased.
e is hardly detected.

That is, the non-linear element has a clear threshold voltage Vth with respect to the emission current Ie. Second, since the emission current Ie changes depending on the voltage Vf applied to the element, the magnitude of the emission current Ie can be controlled by the voltage Vf. Third, since the response speed of the current Ie emitted from the element with respect to the voltage Vf applied to the element is high, the amount of charge of electrons emitted from the element can be controlled by the length of time during which the voltage Vf is applied.

Because of the characteristics described above, the surface conduction electron-emitting device can be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, it is possible to sequentially scan and display the display screen. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the element being driven, and a voltage lower than the threshold voltage Vth is applied to the element in a non-selected state. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, by using the second characteristic or the third characteristic, the light emission luminance can be controlled, so that a gradation display can be performed. (Structure of a multi-electron beam source in which a large number of elements are arranged in a simple matrix) Next, the structure of a multi-electron beam source in which the above-mentioned surface conduction electron-emitting devices are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 13 is a plan view of a multi-electron beam source used for a display panel. Fig. 5-
Surface conduction type emission elements similar to those shown in FIG. 6 are arranged, and these elements are wired in a simple matrix by row-direction wiring electrodes 1003 and column-direction wiring electrodes 1004. Row direction wiring electrode 1003 and column direction wiring electrode 1004
An insulating layer (not shown) is formed between the electrodes at the intersections of the two to maintain electrical insulation.

FIG. 14 is a sectional view taken along the line AA ′ of FIG.
Shown in The multi-electron source having such a structure includes a row-direction wiring electrode 1003, a column-direction wiring electrode 1004, an interelectrode insulating layer (not shown), a device electrode of a surface conduction electron-emitting device, and a conductive thin film. Was formed, power was supplied to each element via the row-direction wiring electrodes 1003 and the column-direction wiring electrodes 1004 to perform the energization forming process and the energization activation process. (Configuration and Manufacturing Method of Display Panel) Next, the configuration and manufacturing method of the display panel of the image display device to which the present embodiment is applied will be described with reference to specific examples.

FIG. 15 is a perspective view of a display panel used in the embodiment, in which a part of the panel is cut away to show the internal structure. In the figure, 1005 is a rear plate, 1006 is a side wall, 1007 is a face plate, and 1005 to 1007 form an airtight container for maintaining the inside of the display panel in a vacuum. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in air or nitrogen atmosphere, Sealing was achieved by baking at 400 to 500 degrees for 10 minutes or more. A method of evacuating the inside of the airtight container to a vacuum will be described later. Rear plate 10
A substrate 1001 is fixed to the substrate 05, and N × M surface conduction electron-emitting devices 1002 are formed on the substrate. (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels. For example, in a display device for displaying high-definition television,
It is desirable to set N = 3000 and M = 1000 or more. In the present embodiment, N = 3072, M
= 1024. ) The NxM surface conduction electron-emitting devices are composed of M row-directional wirings 1003 and N column-directional wirings 1.
004 is a simple matrix wiring. Said 1
The part constituted by 001 to 1004 is called a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail.

In this embodiment, the substrate 1001 of the multi-electron beam source is provided on the rear plate 1005 of the hermetic container.
Is fixed, but the substrate 1 of the multi-electron beam source is
When 001 has sufficient strength, the substrate 1 of the multi-electron beam source is used as a rear plate of the hermetic container.
001 itself may be used. Also, face plate 1
On the lower surface of 007, a fluorescent film 1008 is formed.
Since the present embodiment is a color display device, the fluorescent film 10
08 is the red, green, blue,
The three primary color phosphors are separately applied. The phosphors of the respective colors are separately applied in stripes as shown in FIG. 16A, for example, and a black conductor 1 is provided between the stripes of the phosphors.
010 are provided. The purpose of providing the black conductor 1010 is to prevent the display color from shifting even if the electron beam irradiation position is slightly shifted, and to prevent the reflection of external light to prevent the display contrast from lowering. And preventing charge-up of the fluorescent film by the electron beam.
Although graphite is used as a main component for the black conductor 1010, any other material may be used as long as it is suitable for the above purpose.

FIG. 1 shows how to paint the three primary color phosphors.
The arrangement is not limited to the stripe arrangement shown in FIG. 6A, but may be, for example, a delta arrangement as shown in FIG. 16B or another arrangement. Note that when a monochrome display panel is manufactured, a single-color phosphor material may be used for the phosphor film 1008, and a black conductive material is not necessarily used.

A metal back 1009 known in the field of CRT is provided on the surface of the fluorescent film 1008 on the rear plate side.
Is provided. The purpose of providing the metal back 1009 is
A part of the light emitted from the fluorescent film 1008 is specularly reflected to improve the light utilization rate, or the fluorescent film 1008
8 to protect it, to act as an electrode for applying an electron beam acceleration voltage, and to act as a conductive path for excited electrons of the fluorescent film 1008. The metal back 1009 was formed by forming a fluorescent film 1008 on the face plate substrate 1007, smoothing the surface of the fluorescent film, and vacuum-depositing Al thereon.
Note that when a fluorescent material for low voltage is used for the fluorescent film 1008, the metal back 1009 is not used.

Although not used in the present embodiment,
For the purpose of applying acceleration voltage and improving the conductivity of the fluorescent film,
A transparent electrode made of, for example, ITO may be provided between the face plate substrate 1007 and the fluorescent film 1008. Dx1 to Dxm and Dy1 to Dyn and Hv are
It is an electric connection terminal having an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown). Dx1
Dxm is the row direction wiring 1003 of the multi-electron beam source,
Dy1 to Dyn are column direction wirings 1004 of the multi-electron beam source.
And Hv are electrically connected to the metal back 1009 of the face plate.

In order to evacuate the inside of the airtight container, after the airtight container is assembled, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the airtight container is evacuated to a degree of vacuum of about 10 ^-7 [Torr]. Exhaust until After that, the exhaust pipe is sealed,
In order to maintain the degree of vacuum in the airtight container, a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after sealing. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the hermetic container is 1 × 10 ⁻⁵ or 1 due to the adsorption action of the getter film.
The degree of vacuum is maintained at x10 ^-7 [Torr].

The basic structure and manufacturing method of the display panel according to one embodiment of the present invention have been described above. (Display / Driving) An electric circuit configuration for performing a display operation on the display panel prepared as described above will be exemplified below. FIG. 17 is a block diagram showing a schematic configuration of a driving circuit for performing television display based on an NTSC television signal. In the drawing, 101 is the display panel, 102 is a scanning circuit, 103 is a control circuit, 104 is a shift register, 105 is a line memory,
106 is a synchronization signal separation circuit, 107 is a modulation signal generator,
Vx and Va are DC voltage sources.

Hereinafter, the function of each unit will be described. First,
The display panel 101 is connected to an external electric circuit via terminals Dx1 to Dxm, terminals Dy1 to Dyn, and a high voltage terminal Hv. Among these, terminals Dx1 to Dxm are provided with a multi-electron beam source provided in the display panel, that is, a group of surface conduction type emission elements arranged in a matrix of M rows and N columns in one row (N elements).
A scanning signal for sequentially driving each is applied. On the other hand, to the terminals Dy1 to Dyn, a modulation signal for controlling the output electron beam of each element of the one row of surface conduction electron-emitting devices selected by the scanning signal is applied. Further, the high voltage terminal Hv is connected to the DC voltage source Va, for example, by one.
A DC voltage of 0 K [V] is supplied, which is an accelerating voltage for applying sufficient energy to the electron beam output from the surface conduction electron-emitting device to excite the phosphor.

Next, the scanning circuit 102 will be described.
This circuit includes M switching elements inside (in the figure, schematically indicated by S1 to Sm), and each switching element is connected to an output voltage of a DC voltage source Vx or 0 [V] (ground). Level) is selected and electrically connected to the terminals Dx1 to Dxm of the display panel 101. Each of the switching elements S1 to Sm outputs a control signal Tsc output from the control circuit 103.
It operates based on an, but in fact, for example, FE
It can be easily configured by combining switching elements such as T.

In the case of the present embodiment, the DC voltage source Vx is controlled based on the characteristics of the surface conduction electron-emitting device.
It is set to output a constant voltage of [V]. Also,
The control circuit 103 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Based on a synchronizing signal Tscan sent from a synchronizing signal separating circuit 106, which will be described next, each control signal Tscan, Tsft, and Tmry is generated for each unit. The timing of each control signal will be described later in detail with reference to FIG.

The synchronizing signal separating circuit 106 is a circuit for separating a luminance signal component as a synchronizing signal component from an NTSC television signal input from the outside. As is well known, a frequency separating (filter) is used. If a circuit is used, it can be easily configured. Synchronous signal separation circuit 1
The sync signal separated by 06 is composed of a vertical sync signal and a horizontal sync signal as is well known, but is shown here as a Tsync signal for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience.
Is input to

The shift register 104 is for serially / parallel converting the DATA signal inputted serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 103. Works. (That is, the control signal Tsft may be rephrased as a shift clock of the shift register 104.) The data of one line of the serial / parallel-converted image (corresponding to the drive data of N electron-emitting devices) is , Id1 to Idn are output from the shift register 104 as N parallel signals.

The line memory 105 is a storage device for storing data for one line of an image for a required time only, and stores information such that Id1 to Idn do not exist as appropriate in accordance with a control signal Tmry sent from the control circuit 103. . If not stored, they are output as I'd1 to I'dn and input to the modulation signal generator 107. The modulation signal generator 107 is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices in accordance with each of the image data I'd1 to I'dn.
The voltage is applied to the surface conduction electron-emitting devices in the display panel 101 through the terminals Dy1 to Dyn. Modulation signal generator 10
As 7, a voltage modulation type that generates a voltage pulse of a fixed length but modulates the peak value of the voltage pulse appropriately according to input data can be used.

The function of each unit shown in FIG. 17 has been described above. Before proceeding to the description of the overall operation, the operation of the display panel 101 will be described in more detail with reference to FIGS. For convenience of illustration, the number of pixels of the display panel will be described as 6 × 6 (that is, M = N = 6), but it goes without saying that the display panel 101 actually used has a much larger number of pixels. No.

FIG. 18 shows a multi-electron beam source in which surface conduction electron-emitting devices in which desired non-forming elements are connected in series in a matrix of 6 rows and 6 columns are wired in a matrix. D (1,1), D (1,1)
The position is indicated by (X, Y) coordinates such as 2) to D (6, 6). When an image is displayed by driving such a multi-electron beam source, one of the images parallel to the X axis is displayed.
In this method, an image is formed in a line-by-line manner in a line-sequential manner. To drive the electron-emitting devices corresponding to one line of the image, 0 [V] is applied to the terminals of the rows corresponding to the display lines among Dx1 to Dx6, and 7 [V] is applied to the other terminals. In synchronization with this, a modulation signal is applied to each terminal of Dy1 to Dy6 according to the image pattern of the line.

For example, a case where an image pattern as shown in FIG. 19 is displayed will be described. For convenience of explanation,
The luminance of the light emitting portion of the image pattern is equal, for example, 100
It is assumed to be equivalent to [Foot Lambert]. In the display panel 101, conventionally known P-22 is used as the phosphor, the accelerating voltage is set to 10 K [V], the repetition frequency of the screen display is set to 60 [Hz], and the surface conduction type electron-emitting device has the above characteristics. An emission element was used, but in this case, 10
In order to obtain a luminance of 0 [Foot Lambert], it is appropriate to apply a voltage of 14 [V] to the element corresponding to the luminescent pixel for 10 microseconds. (It should be noted that this numerical value should be changed if each parameter is changed.) Therefore, for example, a period during which the third line of the image in FIG. 19 emits light will be described. FIG. 20 shows the voltage values applied to the multi-electron beam source through the terminals Dx1 to Dx6 and the terminals Dy1 to Dy6 during the emission of the third line of the image. As is apparent from FIG. , D (2,3), D (3,3), D
An electron beam is output by applying 14 [V] to each of the surface conduction electron-emitting devices of (4, 3), while 7 [V] (the device shown by oblique lines in the figure) or 0 is applied to the other devices than the above three devices. [V]
(Shown by a white circle in the figure) is applied, but since this is lower than the threshold voltage of electron emission, no electron beam is output from these elements.

In the same manner, other lines are also shown in FIG.
The multi-electron beam source is driven according to the display pattern of FIG. 9, and this state is shown in time series in FIG.
It is a time chart. As shown in the figure, one screen is displayed by sequentially driving one line at a time from the first line, but by repeating this at a rate of 60 screens per second, a flicker-free image display is possible. Becomes

When the light emission luminance of the display pattern is changed, to increase (decrease) the luminance, the voltage peak value of the pulse of the modulation signal applied to the terminals Dy1 to Dy6 should be larger than 14 [V] ( Modulation) is possible. The method of driving the display panel 101 has been described above by taking a 6 × 6 multi-electron beam source as an example. Next, the overall operation of the apparatus in FIG. 17 will be described with reference to a time chart in FIG.

In FIG. 22, (1) shows the timing of the luminance signal DATA detected by the synchronizing signal separating circuit 106 from the NTSC signal input from the outside, and as shown in FIG. The second line and the third line are sent, and the control circuit 103
Outputs a shift clock Tsft to the shift register 104 as shown in FIG.

When one line of data is accumulated in the shift register 104, a memory write signal Tmry is output from the control circuit 103 to the line memory 105 using the tool shown in FIG. Drive data (for N elements) is written. As a result, the line memory 105
The output signals I'd1 to I'dn change at the timing shown in FIG.

On the other hand, there is no control signal Tscan for controlling the operation of the scanning circuit 102 as shown in FIG. That is, when driving the first line, only the switching element S1 in the scanning circuit 102 is set to 0.
[V], the other switching elements are 7 [V], and when driving the second line, only the switching element S2 is 0 [V], the other switching elements are 7 [V], and so on. The operation is controlled.

Further, in synchronization with this, the modulation signal generator 10
7 to the display panel 101, the modulation signal is output at the timing shown in FIG. With the operation described above, television display can be performed using the display panel 101. In the above description,
Although not particularly described, the shift register 104 and the line memory 105 may be of a digital signal type or an analog signal type. In short, if the serial / parallel conversion and storage of the image signal are performed at a predetermined speed, Good.
When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronizing signal separation circuit 106 into a digital signal. This can be easily performed by providing an A / D converter at the output of the 106. Needless to say, there is.

Further, in this embodiment, an example has been described in which television display is performed based on an NTSC television signal, but the application of the display panel according to the present invention is not limited to this. It can be widely used for other types of television signals or display devices that are directly or indirectly connected to various image signal sources such as computers, image memories, and communication networks. It is suitable for displaying a screen.

Next, a preferred embodiment of the present invention which has solved the above-mentioned problem will be described with reference to Embodiments 1 to 6. These embodiments relate to a method of driving an electron source in which a plurality of surface conduction electron-emitting devices are arranged in a matrix, in particular, a voltage-controlled driving method, which maintains a constant resistance state up to a certain voltage value. By driving through an element having a voltage-current characteristic, which becomes a constant current state when a voltage higher than the voltage value is applied, simple gamma correction can be performed. Further, FIGS.
This will be described in detail with reference to FIG.

FIG. 23 is a diagram showing an example of the device current If and the emission current Ie with respect to the applied voltage Vf of the surface conduction electron-emitting device. The surface conduction type emission element having this characteristic has a resistance of 300Ω.
Are connected in series, as shown in FIG.
Although the emission current amount decreases slightly, the linearity of the emission current Ie with respect to the applied voltage Vf increases, and the emission current can be easily controlled at a large applied voltage. Further, when a non-linear element (constant current element) having a voltage-current characteristic as shown in FIG. 25 is connected in series to the above-mentioned surface conduction type emission element, the emission current amount decreases as shown in FIG.
The linearity of the emission current Ie with respect to the applied voltage Vf was increased, and the emission current was easily controlled at a high applied voltage. Furthermore, the current that flows due to the constant current characteristics of the nonlinear element is limited, and even if a high voltage is applied due to noise or the like, excessive current does not flow through the surface conduction type emission element, and the element section is destroyed. Is preventing that.
This embodiment utilizes the above characteristics. <First Embodiment> FIG. 28 is a diagram showing a part of a schematic configuration of driving of an electron source according to the present embodiment.

In FIG. 28, reference numeral 14 denotes a surface conduction electron-emitting device. The surface conduction electron-emitting devices 14 are arranged in an M × N matrix. Reference numeral 18 denotes a constant current diode element, which is connected in series with the surface conduction type emission element 14. The electron source element 1 is formed by the surface conduction type emission element 14 and the constant current diode element 18. The electron source elements 1 are arranged on an M × N matrix, and constitute an electron source having a large number of surface conduction type emission elements 14.

Next, the electron source of this embodiment will be further described. FIG. 29 shows a plan view of a part of the electron source. FIG. 30 is a cross-sectional view taken along the line AA ′ in the figure. Further, a process for manufacturing the electron source of the present embodiment is shown in FIG. 31A.
-Shown in Figure 31K. In FIG. 29, reference numeral 12 denotes a row-direction wiring, which is composed of n wirings Dx1 to Dxn.
Reference numeral 13 denotes a column-direction wiring, which is composed of m wirings Dy1 to Dym.

FIG. 30 is a schematic sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a P-type silicon substrate on which a constant current diode is formed. The upper part of the electron source substrate structure is covered with an insulating layer 106 made of SiO ₂ , and a positive electrode 110 and a negative electrode 1 are formed.
11 are connected to aluminum wirings 113 and 114, respectively.

In FIG. 30, 101 is a P-type silicon substrate, 12 is a wiring in the row direction, and 13 is a wiring in the column direction. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by applying a current forming process to the thin film for forming the electron-emitting portion. On a P-type silicon substrate 101, two P
An N-type current path region sandwiched between the mold regions is formed, and the negative electrode 111 is connected to the two P regions and one end of the current path. The positive electrode 110 is connected to the other end of the current path to form a constant current diode 18.

The constant current element 18 is formed between the positive electrode 110 and the negative electrode 111. The positive electrode 110 is electrically connected to the electrode 116 of the surface conduction electron-emitting device 14 by the aluminum wiring 113. The other electrode 117 of the surface conduction electron-emitting device 14 is electrically connected to the column wiring 13 by the aluminum wiring 120. The negative electrode 111 of the constant current element is connected to the row
Is electrically connected to

Next, with reference to FIGS. 31A to 31K, an example of a manufacturing process of the functional element having the structure shown in FIG. 30 will be described. FIG. 31A to FIG. 31K are schematic cross-sectional views for explaining an example of this manufacturing process. The first step (FIG. 31A)
Then, a P-type silicon substrate 101 is prepared. Second
(See FIG. 31B), the P-type silicon substrate 101
The insulating layer 118 made of SiO ₂ is coated thereon, and is patterned using a photoresist.

In a third step (see FIG. 31C), an N-type impurity (a conductive material) is diffused into a desired region (102) of the silicon substrate 101. In a fourth step (see FIG. 31D), A current path (103) is formed by diffusing a P-type impurity (conductivity controlling substance). Since the current value of the constant current diode element is determined by the impurity concentration and the width of the current path, in order to obtain desired driving characteristics, special attention is paid to the control of the impurity concentration and the control of the diffusion depth. I have.

In the fifth step (see FIG. 31E), the SiO
_{The second} insulating layer 104 is covered, and a pattern is formed using a photoresist to form a portion connecting the positive electrode and the negative electrode. In the sixth step (see FIG. 31F), a positive electrode 110 is formed in a portion where only the N region of the current path is exposed, and a negative electrode 111 is formed in a portion where the two P regions and the current path are exposed. I do.

In the seventh step (see FIG. 31G), the column direction wiring 13 is arranged. In an eighth step (see FIG. 31H), an insulating layer 107 of SiO ₂ is further coated thereon.
Further, the patterning is performed. The SiO ₂ insulating layer 107 functions as an insulating layer of each part of the constant current element, and also serves as a base layer for forming a surface conduction electron-emitting device and a wiring electrode.

In the ninth step (see FIG. 31I), the positive electrode 110 of the constant current device and the electrode 116 of the surface conduction type emission device are used.
An aluminum wiring 113 for electrically connecting the electrodes, an aluminum wiring 114 for electrically connecting the negative electrode 111 and the row wiring 12, a column wiring 13 and an electrode 117 of the surface conduction type emission element. Wiring 12 to connect to
0 is placed.

In the tenth step (see FIG. 31J), the row-directional wiring 12 is formed so as to be electrically connected to the aluminum wiring 114. In the process described above, a silicon substrate was used to form a constant current element. However, the present invention is not limited to this. For example, a Ga-As substrate may be used. First
In step 1 (see FIG. 31K), the surface-conduction emission device 1
4 is formed. Next, a method of forming the surface conduction electron-emitting device 14 will be described in detail with reference to FIG.

FIG. 32 shows a part of a plan view of an electron emission portion forming thin film 32 mask for forming the surface conduction electron-emitting device 14 in this step. This mask has an inter-element gap G and an opening in the vicinity thereof, and deposits and patterns a Cr film (not shown) having a thickness of Å by vacuum evaporation. Then, organic Pd is spin-coated thereon by a spinner, and then heated and baked at 300 ° C. for 10 minutes to form a thin film of Pd for forming an electron emission portion. The electron emitting portion forming thin film thus formed is composed of fine particles containing Pd as a main element, and has a thickness of 100 Å and a sheet resistance of 5 × 10 4 Ω / □. In addition, 15b and 15c are element electrodes, respectively.

The fine particle film described here is a film in which a plurality of fine particles are aggregated as described above. The fine structure thereof is not limited to a state in which the fine particles are dispersed and arranged here,
Also refers to a film in which fine particles are adjacent to each other or overlapped (including islands). The particle diameter refers to the diameter of the fine particles whose particle shape can be changed in the above state. C
The r film (not shown) and the fired thin film for forming an electron emission portion are wet-etched with an acid etchant to form a desired pattern. The surface conduction electron-emitting device 14 is formed by performing the above-described forming process on the electron-emitting-portion-forming thin film thus formed.

By the steps described above, the row direction wiring 12, the interlayer insulating layer 106, the column direction wiring 13, the device electrodes 116 and 117, the electron emitting portion forming thin film 14, the diode device 18 and the like are formed on the same substrate. A simple matrix wiring substrate of the surface conduction electron-emitting device is formed (see FIG. 29).
Note that the above process is an example using a technique such as thin film, photolinography, and etching. However, the present invention is not limited to this. For example, printing that is a wiring forming technique may be used. Is also good.

The materials of the respective members also have a certain degree of freedom. For example, the wiring material may be any material that is usually used as an electrode material, such as Au, Ag, Cu, Al, Ni, W, Ti,
Cr and the like. In addition to _{MgO, TiO2, Ta 2 O 5} , Al 2 O 3 and these laminates of interlayer insulating layer 106 is also a silicon oxide film, and a mixture thereof. The element electrodes may be made of other conductive materials other than the above-mentioned wiring materials.

Next, an example in which the above-described manufacturing method is applied to the manufacture of an image forming apparatus will be described with reference to FIG. FIG. 33 is basically the same as the configuration of the display panel of FIG. 15 described above. In the present embodiment, however, the configuration of the above-described connection type of the surface conduction type emission element and the diode element is used as the configuration of the electron source element. The difference is in the use. Referring to FIG. 33, an electron source (corresponding to 271 in FIG. 33) in which a large number of planar surface conduction electron-emitting devices are formed is connected to rear plate 281.
After being fixed above, for example, 5 mm above the substrate 271,
A face plate 286 (formed by forming a fluorescent film 284 and a metal back 285 on the inner surface of a glass substrate 283) is disposed via a support frame 282. A frit glass is applied to the joint between the face plate 286, the support frame 282, and the rear plate 281 and is adhered by heating in air or a nitrogen atmosphere. The fixing of the substrate 11 to the rear plate 281 is also performed with frit glass. Reference numeral 274 denotes an electron source element composed of a surface conduction electron-emitting device and a diode device. 272, 27
Reference numeral 3 denotes a row direction wiring and a column direction wiring, respectively.

The fluorescent film 284 is made of only a phosphor in the case of monochrome, but in this embodiment, the phosphor adopts a stripe shape, a black stripe is formed first, and red, green, A blue phosphor is applied to form a phosphor film 284. As a material for the black stripe, a material mainly containing graphite, which is generally used, is used.

In the present embodiment, a slurry method is used as a method of applying a phosphor onto the glass substrate 283. Also, a metal back 2 is usually provided on the inner side of the fluorescent film 284.
85 are provided. The metal back 285 is manufactured by performing a smoothing process (usually called forming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then vacuum-coating Al.

The face plate 286 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 284 in order to further increase the conductivity of the fluorescent film 284. In this embodiment, only the metal back is provided. Is omitted because sufficient conductivity can be obtained. Further, when the above-mentioned sealing is performed, in the case of color, since the phosphors of each color and the electron-emitting devices must correspond to each other, sufficient alignment is performed.

The atmosphere in the glass container thus constructed is evacuated by a vacuum pump through an exhaust pipe (not shown) to reach a sufficient degree of vacuum. A voltage is applied between the device electrodes of the electron-emitting device 1 through DOYn, and the above-described forming process is performed on the electron-emitting forming thin film 14 to form an electron-emitting device having an electron-emitting portion.

Next, after the forming of all the surface conduction electron-emitting devices is completed, the exhaust pipe (not shown) is welded by heating with a gas burner at a degree of vacuum of about 1 × 10 ⁻⁶ Torr, and the envelope is heated. Was sealed. Finally, a getter process was performed to maintain the degree of vacuum after sealing. This involves heating a getter disposed at a predetermined position (not shown) in the image forming apparatus by a heating method such as high-frequency heating immediately before performing sealing,
A treatment for forming a vapor deposition film was performed. The getter was mainly composed of Ba or the like.

In the image forming apparatus of the present embodiment configured as described above, the scanning signals and the modulation signals are supplied to the respective electron-emitting devices through the external terminals DX1 to DXm and DY1 to DYn. The generation unit emits electrons by applying each, and through the high voltage terminal Hv,
Several k on metal back 285 or transparent electrode (not shown)
A high voltage of V or more is applied to accelerate the electron beam,
An image is formed by colliding with 84 to excite and emit light.

Although the above-described outline steps are necessary for manufacturing an image forming apparatus, the detailed parts such as the materials of the respective members are not limited to those described above. Needless to say, it is appropriately selected so as to be suitable. As described above, according to the present embodiment, when a plurality of surface conduction electron-emitting devices perform voltage modulation driving of the electron sources arranged in a matrix, a simple gamma correction is performed by the action of the nonlinear device. And at the same time, prevent the destruction of the element due to excessive current flowing. <Second Embodiment> In the first embodiment, a constant current diode is used as the constant current element formed in series with the surface conduction electron-emitting device. In the second embodiment, an example in which a transistor is used as the constant current element will be described. .

FIG. 34 is a diagram showing a part of a schematic configuration of driving the electron source according to the present embodiment. In FIG. 34, 14
Is a surface conduction electron-emitting device. Surface conduction type emission device 1
4 has an M × N matrix arrangement. Reference numeral 318 denotes a constant current element using a transistor, which is connected in series with the surface conduction electron-emitting device 14. The electron source element 1 is formed by the surface conduction electron-emitting element 14 and the constant current element 318 using a transistor. Electron source element 1
Are arranged on an M × N matrix and constitute an electron source having a large number of surface conduction electron-emitting devices 14.

Next, the electron source of this embodiment will be further described. FIG. 35 shows a plan view of a part of the electron source. FIG. 36 shows a cross-sectional view taken along the line AA ′ in the figure. Further, a process for manufacturing the electron source of the present embodiment is shown in FIG.
-Shown in Figure 37J. In FIG. 36, reference numeral 12 denotes a row-direction wiring, which is composed of n wirings Dx1 to Dxn.
Reference numeral 13 denotes a column-direction wiring, which is composed of m wirings Dy1 to Dym.

FIG. 36 is a schematic sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a P-type silicon substrate on which a transistor is formed. The upper part of the electron source substrate structure is covered with an insulating layer 406 made of SiO ₂ , and a positive electrode 410 and a negative electrode 411 are provided.
Are connected to aluminum wirings 413 and 414, respectively.

In FIG. 36, reference numeral 401 denotes a P-type silicon substrate, 12 denotes a row-direction wiring, and 13 denotes a column-direction wiring. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by applying a current forming process to the thin film for forming the electron-emitting portion. A transistor (MOSFET) 318 is formed on a P-type silicon substrate 401, and its drain electrode 405 and gate electrode 404 are both connected to a positive electrode 410.

The source electrode 403 is connected to the negative electrode 411. These constant current elements are connected to the positive electrode 410
And the positive electrode 410 is electrically connected to the electrode 416 of the surface conduction electron-emitting device 14 by the aluminum wiring 413. Surface conduction type emission device 14
The other electrode 417 of the
It is electrically connected to the column direction wiring 13. Further, negative electrode 411 of the constant current element is electrically connected to row direction wiring 12 by aluminum wiring 414.

Next, with reference to FIGS. 37A to 37J, an example of a manufacturing process of the functional element having the structure shown in FIG. 37 will be described. FIG. 37A to FIG. 37J are schematic cross-sectional views for explaining an example of the manufacturing process. The first step (FIG. 37A)
Then, a P-type silicon substrate 401 is prepared. Second
(See FIG. 37B), the P-type silicon substrate 401
An insulating layer 418 of SiO ₂ is coated thereon, and is patterned using a photoresist.

In the third step (see FIG. 37C), an N-type impurity (conductive material) is diffused into a desired region (402) of the silicon substrate 401. Since the drain current of a transistor is determined by the impurity concentration in the channel, the permittivity / thickness of the gate insulating film, the channel width, and the channel length, these controls are specially performed to obtain desired drive characteristics. Attention is paid.

In a fourth step (see FIG. 37D), a gate electrode 404 is formed. In the fifth step (see FIG. 37E), the insulating layer 407 of SiO ₂ is covered, and a pattern is formed using a photoresist. In a sixth step (see FIG. 37F), a source electrode 403 and a drain electrode 405 are formed. Further, the gate electrode 404 and the drain electrode 405
Is formed to form a positive electrode 410 to which the. The negative electrode 411 is the source electrode 403. Further, the column direction wiring 13 is arranged on the insulating layer 418.

In a seventh step (see FIG. 37G), an insulating layer 408 of SiO ₂ is further coated thereon and patterned. In the eighth step (see FIG. 37H),
An aluminum wiring 413 for electrically connecting the positive electrode 410 of the constant current element and the electrode 416 of the surface conduction type emission element;
An aluminum wiring 414 for electrically connecting the negative electrode 411 and the row wiring 12 and an aluminum wiring 420 for electrically connecting the column wiring 13 and the electrode 417 of the surface conduction electron-emitting device are arranged.

In the ninth step (see FIG. 37I), the row-directional wiring 12 is formed so as to be electrically connected to the aluminum wiring 414. In the process described above, a silicon substrate was used to form a constant current element. However, the present invention is not limited to this. For example, in a tenth process (see FIG. 37J), a Ga-As substrate may be used. The conduction type emission element 14 is formed. The forming method is the same as in the first embodiment.

In the process described above, an FET (field effect transistor) was formed on a semiconductor substrate in order to form a transistor, but a TFT (field effect thin film transistor) was formed on an insulating substrate such as a glass substrate. A thing may be used. <Third Embodiment> In the first and second embodiments, the constant current element formed in series with the surface conduction electron-emitting device is formed. However, in the third embodiment, the constant current element is provided at the end of the column direction wiring. An example in the case of forming is shown.

FIG. 38 is a diagram showing a part of a schematic configuration of driving the electron source according to the present embodiment. In FIG. 38, 14
Is a surface conduction electron-emitting device. In the present embodiment, the electron source element 1 is formed only by the surface conduction electron-emitting elements 14 and has an M × N matrix arrangement. Reference numeral 12 denotes a row direction wiring, and 13 denotes a column direction wiring. Reference numeral 518 denotes a constant current diode element, which is formed at an end of the row wiring 12. As described above, an electron source including a large number of surface conduction electron-emitting devices 14 arranged on an M × N matrix is configured.

Next, the electron source of this embodiment will be further described. FIG. 39 shows a plan view of a part of the electron source. FIG. 40 is a cross-sectional view taken along the line AA ′ in the figure. Further, a process for manufacturing the electron source of the present embodiment is shown in FIG.
-Shown in FIG. 41K; In FIG. 39, reference numeral 12 denotes a row-direction wiring, which includes n wirings Dx1 to Dxn.
Reference numeral 13 denotes a column-direction wiring, which is composed of m wirings Dy1 to Dym. Further, a constant current diode element is formed at an end of the column direction wiring 13.

FIG. 40 is a schematic sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a P-type silicon substrate on which a constant current diode is formed. In FIG. 40, 501 is a P-type silicon substrate, 12 is a row direction wiring, and 13 is a column direction wiring. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by subjecting a thin film for forming an electron-emitting portion to an energization forming process via a constant current element 518.

On a P-type silicon substrate 501, an N-type current path region sandwiched between two P-type regions is formed.
The negative electrode 511 is connected to the two P regions and one end of the current path. The positive electrode 510 is connected to the other end of the current path, forming a constant current diode element 518. These constant current elements include a positive electrode 510 and a negative electrode 51.
1, the positive electrode 510 and the negative electrode 511 are both electrically connected to the column wiring 13.

Next, with reference to FIGS. 41A to 41K, an example of a manufacturing process of the functional element having the structure shown in FIG. 40 will be described. FIG. 41A to FIG. 41K are schematic cross-sectional views for explaining an example of this manufacturing process. The first step (FIG. 41A)
), A P-type silicon substrate 501 is prepared. Second
In the step (see FIG. 41B), a P-type silicon substrate 501 is formed.
An insulating layer 505 of SiO ₂ is coated thereon, and is patterned using a photoresist.

In a third step (see FIG. 41C), an N-type impurity (conductive dominant) is diffused into a desired region (502) of the silicon substrate 501. In a fourth step (see FIG. 41D), A current path (503) is formed by diffusing a P-type impurity (conductivity controlling substance). Since the current value of the constant current diode element is determined by the impurity concentration and the width of the current path, in order to obtain desired driving characteristics, special attention is paid to the control of the impurity concentration and the control of the diffusion depth. I have.

In the fifth step (see FIG. 41E), the SiO
_{The second} insulating layer 504 is covered and patterned using a photoresist to form a portion connecting the positive electrode and the negative electrode. In the sixth step (see FIG. 41F), a positive electrode 510 is formed in a portion where only the N region of the current path is exposed, and a negative electrode 511 is formed in a portion where the two P regions and the current path are exposed. I do.

In the seventh step (see FIG. 41G), the column direction wiring 13 is arranged. In an eighth step (see FIG. 41H), an insulating layer 506 of SiO ₂ is further coated thereon.
Further, the patterning is performed. Ninth step (FIG. 41)
I), an aluminum wiring 512 for electrically connecting the row direction wiring 12 and the electrode 516 of the surface conduction electron-emitting device.
And the column direction wiring 13 and the electrode 517 of the surface conduction electron-emitting device
Aluminum wiring 513 for electrically connecting the same is arranged.

In the tenth step (see FIG. 41J), the row-directional wiring 12 is formed so as to be electrically connected to the aluminum wiring 512. In the process described above, a silicon substrate was used to form a constant current element. However, the present invention is not limited to this. For example, a Ga-As substrate may be used. First
In step 1 (see FIG. 41K), the surface-conduction emission device 1
4 is formed. The forming method is the same as in the first embodiment. Fourth Embodiment In the first embodiment, a constant current diode formed in series with a surface conduction electron-emitting device is used. In the fourth embodiment, an example in which a transistor is used as a constant current device will be described. .

FIG. 42 is a diagram showing a part of a schematic configuration of driving the electron source of the present embodiment. In FIG. 42, 14
Is a surface conduction electron-emitting device. In the present embodiment, an electron source element is formed only by the surface conduction electron-emitting devices 14 and has an M × N matrix arrangement. Reference numeral 12 denotes a row direction wiring, and 13 denotes a column direction wiring. Reference numeral 618 denotes a constant current element using a transistor, which is formed at an end of the row wiring 12. As described above, an electron source including a large number of surface conduction electron-emitting devices 14 arranged on an M × N matrix is configured.

Next, the electron source of this embodiment will be further described. FIG. 43 is a plan view of a part of the electron source. FIG. 44 is a sectional view taken along the line AA ′ in the figure. Further, a process for manufacturing the electron source of the present embodiment is shown in FIG.
-Shown in Figure 45K. In FIG. 43, reference numeral 12 denotes a row wiring, which is composed of n wirings Dx1 to Dxn.
Reference numeral 13 denotes a column-direction wiring, which is composed of m wirings Dy1 to Dym. A constant current element using a transistor is formed at an end of the column direction wiring 13.

FIG. 44 is a schematic cross section showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a P-type silicon substrate on which a constant current element 618 using a transistor is formed. FIG. In FIG.
601 is a P-type silicon substrate, 12 is a row-direction wiring, and 13 is a column-direction wiring. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by subjecting a thin film for forming an electron-emitting portion to an energization forming process via a constant current element 618.

A transistor (MOSFET) 618 is formed on a P-type silicon substrate 601, and its drain electrode 605 and gate electrode 604 are both connected to a positive electrode 610. The source electrode 603 is a negative electrode 611.
It is connected to the. The constant current element 618 includes a positive electrode 610
The positive electrode 610 is electrically connected to the column wiring 13 together with the negative electrode 611.

Next, with reference to FIGS. 45A to 45K, an example of a manufacturing process of the functional element having the structure shown in FIG. 44 will be described. FIGS. 45A to 45K are schematic cross-sectional views illustrating an example of the manufacturing process. The first step (FIG. 45A)
Then, a P-type silicon substrate 601 is prepared. Second
In the step (see FIG. 45B), the P-type silicon substrate 601
An insulating layer 605 of SiO ₂ is coated thereon, and is patterned using a photoresist.

In the third step (see FIG. 45C), an N-type impurity (conductive material) is diffused into a desired region (602) of the silicon substrate 601. Since the drain current of a transistor is determined by the impurity concentration in the channel, the permittivity / thickness of the gate insulating film, the channel width, and the channel length, these controls are specially performed to obtain desired drive characteristics. Attention is paid.

In a fourth step (see FIG. 45D), a gate electrode 604 is formed. In a fifth step (see FIG. 45E), the insulating layer 607 of SiO ₂ is covered, and a pattern is formed using a photoresist. In a sixth step (see FIG. 45F), a source electrode 603 and a drain electrode 605 are formed. Further, a gate electrode 604 and a drain electrode 605
Is formed to form a positive electrode 610 connected to the. The negative electrode 611 is the source electrode 603.

In the seventh step (see FIG. 45G), the column direction wiring 13 is arranged so as to be connected to each of the positive electrode 610 and the negative electrode 611. Eighth step (see FIG. 45H)
Then, an insulating layer 606 of SiO ₂ is further coated thereon and patterned. In the ninth step (see FIG. 45I), the aluminum wiring 6 for electrically connecting the electrode 616 of the surface conduction electron-emitting device to the row wiring 12 is formed.
12, column-directional wiring 13 and electrode 6 of surface conduction electron-emitting device
An aluminum wiring 613 for electrically connecting the semiconductor device 17 is arranged.

In the tenth step (see FIG. 45J), the row-direction wiring 12 is formed so as to be electrically connected to the aluminum wiring 612. In the process described above, a silicon substrate was used to form a constant current element. However, the present invention is not limited to this. For example, a Ga-As substrate may be used. First
In step 1 (see FIG. 45K), the surface conduction electron-emitting device 1
4 is formed. The forming method is the same as in the first embodiment.

In the steps described above, an FET (field effect transistor) was formed on a semiconductor substrate to form a transistor. However, a TFT (field effect thin film transistor) was formed on an insulating substrate such as a glass substrate. A thing may be used. <Fifth Embodiment> In the first and second embodiments, the constant current element formed in series with the surface conduction electron-emitting device is formed. In the fifth embodiment, the constant current element is provided at the end of the row direction wiring. An example in the case of forming is shown.

FIG. 46 is a diagram showing a part of a schematic configuration of driving the electron source of the present embodiment. In FIG. 46, 14
Is a surface conduction electron-emitting device. In the present embodiment, the electron source element 1 is formed only by the surface conduction electron-emitting elements 14 and has an M × N matrix arrangement. Reference numeral 12 denotes a row direction wiring, and 13 denotes a column direction wiring. A constant current diode element 718 is formed at an end of the row wiring 12. As described above, an electron source including a large number of surface conduction electron-emitting devices 14 arranged on an M × N matrix is configured.

Next, the electron source of this embodiment will be further described. FIG. 47 shows a plan view of a part of the electron source. FIG. 48 is a sectional view taken along the line AA ′ in the figure. Further, a process for manufacturing the electron source of the present embodiment is shown in FIG.
-Shown in Figure 49L; In FIG. 47, reference numeral 12 denotes a row-direction wiring, which is composed of n wirings Dx1 to Dxn.
Reference numeral 13 denotes a column-direction wiring, which is composed of m wirings Dy1 to Dym. Further, a constant current diode element is formed at an end of the row direction wiring 12.

FIG. 48 is a schematic sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a P-type silicon substrate on which a constant current diode is formed. In FIG. 48, 701 is a P-type silicon substrate, 12 is a row-direction wiring, and 13 is a column-direction wiring. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by subjecting the thin film on which the electron-emitting portion is formed to an energization forming process via the constant current element 718.

On a P-type silicon substrate 701, an N-type current path region sandwiched between two P-type regions is formed.
The negative electrode 711 is connected to the two P regions and one end of the current path. The positive electrode 710 is connected to the other end of the current path to form a constant current diode element 718. The constant current element 718 includes a positive electrode 710 and a negative electrode 711.
The positive electrode 710 and the negative electrode 711 are both electrically connected to the column wiring 13.

Next, with reference to FIGS. 49A to 49L, an example of a manufacturing process of the functional element having the structure shown in FIG. 48 will be described. FIG. 49A to FIG. 49L are schematic sectional views for explaining an example of this manufacturing process. The first step (FIG. 49A)
Next, a P-type silicon substrate 701 is prepared. Second
In the step (see FIG. 49B), a P-type silicon substrate 701 is formed.
An insulating layer 705 of SiO ₂ is coated thereon, and a pattern is formed using a photoresist.

In a third step (see FIG. 49C), an N-type impurity (conductive dominant) is diffused into a desired region (702) of the silicon substrate 701, and in a fourth step (see FIG. 49D) A current path (703) is formed by diffusing a P-type impurity (conductivity controlling substance). Since the current value of the constant current diode element is determined by the impurity concentration and the width of the current path, in order to obtain desired driving characteristics, special attention is paid to the control of the impurity concentration and the control of the diffusion depth. I have.

In the fifth step (see FIG. 49E), the SiO
_{The second} insulating layer 704 is covered, and a pattern is formed using a photoresist to form a portion connecting the positive electrode and the negative electrode. In the sixth step (see FIG. 49F), the N
The positive electrode 710 is formed in a portion where only the region is exposed, and the negative electrode 711 is formed in a portion where the two P regions and the current path are exposed.

In the seventh step (see FIG. 49G), the SiO
_{The second} insulating layer 707 is covered and patterned. In the eighth step (see FIG. 49H), in the column-direction wiring 1
Place 3. In a ninth step (see FIG. 49I), an insulating layer 706 of SiO ₂ is further coated thereon and patterned.

In a tenth step (see FIG. 49J), an aluminum wiring 712 for electrically connecting the row direction wiring 12 and the electrode 716 of the surface conduction electron-emitting device, and a column direction wiring 13
And an aluminum wiring 713 for electrically connecting the electrode 717 of the surface conduction electron-emitting device to the device. In an eleventh step (see FIG. 49K), the row-directional wiring 12 is
It is formed so as to be electrically connected to.

In the steps described above, a silicon substrate was used to form a constant current element. However, the present invention is not limited to this. For example, a Ga-As substrate may be used. First
In step 2 (see FIG. 49L), the surface-conduction emission device 1
4 is formed. The forming method is the same as in the first embodiment. <Sixth Embodiment> In the fifth embodiment, a constant current diode formed in series with a surface conduction electron-emitting device is used. In the sixth embodiment, an example in which a transistor is used as a constant current device will be described. .

FIG. 50 is a diagram showing a part of a schematic configuration of driving the electron source according to the present embodiment. In FIG. 50, 14
Is a surface conduction electron-emitting device, in which a thin film including an electron-emitting portion is formed by performing an energization forming process on the thin film for forming an electron-emitting portion (inside 14). In the present embodiment, the surface conduction electron-emitting device 14 is used.
Only the electron source elements are formed, and an M × N matrix arrangement is provided. Reference numeral 12 denotes a row direction wiring, and 13 denotes a column direction wiring. A constant current element 818 using a transistor is formed at an end of the row wiring 12. In this manner, an electron source including a large number of surface conduction electron-emitting devices 14 arranged on an M × N matrix is configured.

Next, the electron source of this embodiment will be further described. FIG. 51 shows a plan view of a part of the electron source. FIG. 52 shows a cross-sectional view taken along the line AA ′ in the figure. Further, a process for manufacturing the electron source of the present embodiment is shown in FIG.
A- It is shown in FIG. In FIG. 51, reference numeral 12 denotes a row direction wiring, which is composed of n wirings Dx1 to Dxn.
Reference numeral 13 denotes a column-direction wiring, which is composed of m wirings Dy1 to Dym. A constant current element using a transistor is formed at an end of the column direction wiring 12.

FIG. 52 is a schematic cross-sectional view showing an example of an electron source substrate in which a surface conduction electron-emitting device as an electron-emitting device is formed on a P-type silicon substrate on which a constant current element using a transistor is formed. It is. Referring to FIG.
Denotes a P-type silicon substrate, 12 denotes a row direction wiring, and 13 denotes a column direction wiring. In the surface conduction electron-emitting device 14, a thin film including an electron-emitting portion is formed by subjecting the thin film for forming an electron-emitting portion to an energization forming process via a constant current element 818.

A transistor (MOSFET) 818 is formed on a P-type silicon substrate 801, and its drain electrode 805 is connected to a positive electrode 810. The gate electrode 804 and the source electrode 803 are both connected to the negative electrode 811. These constant current elements are connected to the positive electrode 810.
And the negative electrode 811, and the positive electrode 810 is electrically connected to the column wiring 13 together with the negative electrode 811.

Next, with reference to FIGS. 53A to 53L, an example of a manufacturing process of the functional element having the structure shown in FIG. 52 will be described. FIG. 53A to FIG. 53L are schematic cross-sectional views for explaining an example of the manufacturing process. The first step (FIG. 53A)
Next, a P-type silicon substrate 801 is prepared. Second
In the step (see FIG. 53B), a P-type silicon substrate 801 is formed.
An insulating layer 805 made of SiO ₂ is coated thereon, and is patterned using a photoresist.

In the third step (see FIG. 53C), an N-type impurity (conductive material) is diffused into a desired region (802) of the silicon substrate 801. Since the drain current of a transistor is determined by the impurity concentration in the channel, the permittivity / thickness of the gate insulating film, the channel width, and the channel length, these controls are specially performed to obtain desired drive characteristics. Attention is paid.

In a fourth step (see FIG. 53D), a gate electrode 804 is formed. In a fifth step (see FIG. 53E), the insulating layer 807 of SiO ₂ is covered, and a pattern is formed using a photoresist. In a sixth step (see FIG. 53F), a source electrode 803 and a drain electrode 805 are formed. Further, a gate electrode 804 and a drain electrode 805
Is formed to form a positive electrode 810 connected to the. The negative electrode 811 is the source electrode 803.

In a seventh step (see FIG. 53G), an SiO ₂ insulating layer 809 is further coated thereon, and in an eighth step of patterning the same, a positive electrode 810 and a negative electrode 810 are formed. 811 are arranged so as to be connected to each of them. The ninth step (FIG. 53I)
), An insulating layer 808 of SiO ₂ is further coated thereon and patterned.

In the tenth step (see FIG. 53J), an aluminum wiring 812 for electrically connecting the electrode 816 of the surface conduction electron-emitting device to the row wiring 12 and a column wiring 13
An aluminum wiring 813 for electrically connecting the electrode 817 of the surface conduction electron-emitting device to the electrode 817 is arranged. In an eleventh step (see FIG. 53K), the row-directional wiring 12 is
It is formed so as to be electrically connected to.

In the process described above, a silicon substrate was used to form a constant current element. However, the present invention is not limited to this. For example, a Ga-As substrate may be used.
In the step (see FIG. 53L), the surface conduction type emission element 14
To form The forming method is the same as in the first embodiment. In the steps described above, in order to form a transistor,
Although the FET (field effect transistor) is formed on the semiconductor substrate, a TFT (field effect thin film transistor) formed on an insulating substrate such as a glass substrate may be used.

According to the embodiment described above, when a plurality of surface conduction electron-emitting devices perform voltage modulation driving of the electron sources arranged in a matrix, the emission current with respect to the applied voltage is controlled by the action of the nonlinear element. Can be increased, and simple gamma correction can be performed. next,
A preferred embodiment for solving the above-mentioned problem when forming the surface conduction electron-emitting device according to one embodiment of the present invention will be described below. <Seventh Embodiment> A seventh embodiment relates to a method of manufacturing an electron source in which a plurality of surface conduction electron-emitting devices are arranged in a matrix, and in particular, to a method of energization forming. A uniform element is formed by performing an energization forming process on the conductive film before the electron emission portion is formed through a non-linear element having non-linear voltage-current characteristics.

Since the connected non-linear element acts to block an excessive current flowing during energization forming, a surface conduction electron-emitting element having extremely poor electron emission characteristics due to an excessive current flowing through the conductive film is formed. Can be prevented. FIG. 54 is a block diagram showing a schematic configuration of an electric circuit for performing energization forming in the present embodiment.

In FIG. 54, reference numeral 14 denotes a surface conduction electron-emitting device which forms a thin film including an electron-emitting portion by performing an energization forming process on the thin film for forming an electron-emitting portion (inside 14). It is. The surface conduction electron-emitting devices 14 have an M × N matrix arrangement. 18
Is a constant current diode element, and the surface conduction type emission element 1
4 and connected in series. The electron source element 1 is formed by the surface conduction type emission element 14 and the constant current diode element 18. The electron source elements 1 are arranged on an M × N matrix, and constitute an electron source 3 (hereinafter, referred to as an electron source 3) having a large number of surface conduction emission elements 14. Reference numeral 4 denotes a pulse generation power supply which generates a forming pulse.

Reference numerals 5 and 6 denote switching circuits, and reference numeral 7 denotes a control circuit. The switching circuit 5 includes a switching element for switching between applying a forming pulse from the pulse generation power supply 4 to the terminals DX1 to DXm of the row direction wiring and grounding to a ground, and a column direction wiring for selecting an element for forming. And switch elements for selecting the terminals DY1 to DYn. The switching circuit 6 is composed of a switch element for switching between connecting the terminals DY1 to DYn of the column direction wiring to the ground or setting the state to the potential Vy. Further, the switching circuits 5 and 6 can simultaneously select a plurality of terminals. Further, the control circuit 7 controls the switching operation of the switching circuits 5 and 6, the pulse generation timing of the pulse generation power supply 4, and the boosting of the pulses.

The constant current diode element 18 has a voltage-current characteristic as shown in FIG. 55, and supplies a sufficient current to perform the forming when the energization forming process is performed on the thin film for forming the electron-emitting portion (inside 14). You can shed,
This is a device having a voltage-current characteristic that prevents a current from flowing into the electron-emitting-portion-forming thin film (inside the electron-emitting portion) such that the electron-emitting portion is destroyed or the electron-emitting characteristics of the surface-conduction emission device 14 are significantly deteriorated. .

In order to explain the energizing process in detail, FIG.
FIG. 57 shows an appropriate voltage waveform applied from the pulse generation source 4, and FIG. 57 shows an example of a current waveform flowing in the electron-emitting-portion-forming thin film (at the inside) at that time. In the present embodiment, as shown in FIG. 56, a triangular wave pulse having a pulse width T1 is continuously applied at a pulse interval T2. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. At that time,
Since the energization forming process is performed on the electron emitting portion forming thin film (inside 14) through the constant current diode element 18, the electron emitting portion forming thin film (inside 14) is formed as shown in FIG.
However, when only a current that is sufficient for the forming process as shown in (1) but does not deteriorate the element portion flows, the energization process is performed, and the surface conduction type emission device 14 is formed.

As described above, according to the present embodiment, the conductive film of the surface conduction electron-emitting device before the electron-emitting portion is formed is energized via the non-linear device having the non-linear voltage-current characteristics. Since the forming process is performed, the connected non-linear element acts to cut off an excessive current flowing during energization forming, so that a surface conduction type emission element having extremely poor electron emission characteristics due to an excessive current flowing through the conductive film. Can be prevented, and a uniform element can be formed. <Eighth Embodiment> In the eighth embodiment, a constant current diode formed in series with a surface conduction electron-emitting device is used. In the present embodiment, an example in which a transistor is used as a constant current device will be described. .

FIG. 58 is a block diagram showing a schematic configuration of an electric circuit for performing energization forming in the present embodiment. In FIG. 58, reference numeral 14 denotes a surface conduction electron-emitting device, which forms a thin film including an electron-emitting portion by performing an energization forming process on the thin film for forming an electron-emitting portion (inside the same). Surface conduction type emission device 14
Has an M × N matrix arrangement. Reference numeral 318 denotes a constant current element using a transistor, which is connected in series with the surface conduction electron-emitting device 14. The surface-conduction type emission device 14 and the constant current device 31 using the transistor.
8, the electron source element 1 is formed. The electron source element 1 is M
XN matrix, and a surface conduction electron-emitting device 1
An electron source 303 (hereinafter, referred to as an electron source 303) including a large number of electron sources 4 is configured. Reference numeral 304 denotes a pulse generation power supply, which generates a forming pulse.

305 and 306 are switching circuits, and 307 is a control circuit. Switching circuit 305
The pulse generation power supply 30 is connected to the terminals DX1 to DXm of the row direction wiring.
A switching element for switching between application of a forming pulse from No. 4 and grounding to ground, and a terminal DY1 of a column direction wiring for selecting an element for forming.
To DYn. The switching circuit 306 includes a switch element that switches between connecting the terminals DY1 to DYn of the column direction wiring to the ground or setting the terminal to the state of the potential Vy. The switching circuit 30
5, 306 can simultaneously select a plurality of terminals. Further, the control circuit 307 includes the switching circuit 30
5, 306, the pulse generation timing of the pulse generation power supply 304 and the boosting of the pulse.

Constant current element 318 using transistor
Connects the drain and the gate of the transistor, the characteristics between the source and the drain at that time have the voltage-current characteristics as shown in FIG. 11, and the thin film for forming the electron emission portion (inside of 14)
A sufficient current can be supplied to perform the forming when the energization forming process is performed. However, a current that causes destruction of the electron emission portion or significantly degrades the electron emission characteristics of the surface conduction electron-emitting device 14 is generated. Thin film for formation (14
This element has a voltage-current characteristic that prevents it from flowing to the inside.

The energization process has already been described with reference to FIGS.
7, the description is omitted. <Embodiment 9> In Embodiments 7 and 8, the constant current element formed in series with the surface conduction electron-emitting device is formed. In the present embodiment, the case where the constant current element is formed at the end of the column direction wiring is provided. An example is shown below.

FIG. 59 is a diagram showing a schematic configuration of an electric circuit for performing energization forming in the present embodiment. In FIG. 59, reference numeral 14 denotes a surface conduction electron-emitting device, which forms a thin film including an electron-emitting portion by performing an energization forming process on the thin film for forming an electron-emitting portion (inside of 14). In the present embodiment, the electron source element 1 is formed only by the surface conduction electron-emitting device 14, and M × M
It has an N matrix arrangement. 12 is a row direction wiring,
Reference numeral 13 denotes a column direction wiring. Reference numeral 518 denotes a constant current diode element, which is formed at an end of the row wiring 12. An electron source 453 (hereinafter referred to as an electron source 4) having a large number of the surface conduction electron-emitting devices 14 arranged on an M × N matrix in this manner.
53).

Reference numeral 454 denotes a pulse generating power supply for generating a forming pulse. 455 and 456 are switching circuits, and 457 is a control circuit. A switching circuit 455 for switching between applying a forming pulse from the pulse generation power supply 454 to the terminals DX1 to DXm of the row direction wiring or grounding to ground;
A switch element for selecting terminals DY1 to DYn of the column wiring to select an element for forming.
The switching circuit 456 includes terminals DY1 to D
It comprises a switch element for switching whether Yn is connected to the ground or at the potential Vy. The switching elements 455 and 456 can select a plurality of terminals at the same time. Further, the control circuit 457 performs a switching operation of the switching circuits 455 and 456 and the pulse generation power supply 4.
The pulse generation timing of 54 and the boosting of the pulse are controlled.

The energization process has already been described with reference to FIGS.
7, the description is omitted. <Embodiment 10> In this embodiment, an example is shown in which a transistor is formed as a constant current element at a column direction wiring end of a surface conduction electron-emitting device.

FIG. 60 is a diagram showing a schematic configuration of an electric circuit for performing energization forming in the present embodiment. In FIG. 60, reference numeral 14 denotes a surface conduction electron-emitting device, which forms a thin film including an electron-emitting portion by performing an energization forming process on the thin film for forming an electron-emitting portion (inside of 14). In the present embodiment, the electron source element 1 is formed only by the surface conduction electron-emitting device 14, and M × M
It has an N matrix arrangement. 12 is a row direction wiring,
Reference numeral 13 denotes a column direction wiring. Reference numeral 618 denotes a constant current element using a transistor, which is formed at an end of the row wiring 12. As described above, an electron source 553 (hereinafter, referred to as an electron source 553) including many surface conduction electron-emitting devices 14 arranged on an M × N matrix is configured.

A pulse generating source 554 generates a forming pulse. 555 and 556 are switching circuits, and 557 is a control circuit. The switching circuit 555 includes a switching element that switches between applying a forming pulse from the pulse generation power supply 554 to the terminals DX1 to DXm of the row direction wiring and grounding the ground, and a column direction wiring for selecting an element that performs the forming. And switch elements for selecting the terminals DY1 to DYn. The switching circuit 556 is composed of a switch element that switches between connecting the terminals DY1 to DYn of the column direction wiring to the ground or setting the terminals to the potential Vy. Further, the switching circuits 555 and 556 can select a plurality of terminals at the same time. Further, the control circuit 557 performs a switching operation of the switching circuits 555 and 556, and a pulse generation power supply 554.
The pulse generation timing and pulse boosting are controlled.

The energization process has already been described with reference to FIGS.
7, the description is omitted. <Eleventh Embodiment> In an eleventh embodiment, an example is shown in which a constant current diode is formed at the end of a row wiring.

FIG. 61 is a diagram showing a schematic configuration of an electric circuit for performing energization forming in the present embodiment. In FIG. 61, reference numeral 14 denotes a surface conduction electron-emitting device, which forms a thin film including an electron-emitting portion by performing an energization forming process on the thin film for forming an electron-emitting portion (inside). In the present embodiment, the electron source element 1 is formed only by the surface conduction electron-emitting device 14, and M × M
It has an N matrix arrangement. 12 is a row direction wiring,
Reference numeral 13 denotes a column direction wiring. A constant current diode element 718 is formed at an end of the row wiring 12. An electron source 653 (hereinafter referred to as an electron source 6) having a large number of the surface conduction electron-emitting devices 14 arranged on an M × N matrix in this manner.
53).

Reference numeral 654 denotes a pulse generation source, which generates a forming pulse. 655 and 656 are switching circuits, and 657 is a control circuit. The switching circuit 655 includes a switching element that switches between applying a forming pulse from the pulse generation power supply 654 to the terminals DX1 to DXm of the row direction wiring and grounding to ground, and a column direction wiring for selecting an element that performs forming. And switch elements for selecting the terminals DY1 to DYn. The switching circuit 656 includes a switch element that switches between connecting the terminals DY1 to DYn of the column direction wiring to the ground or setting the terminals to the potential Vy. Further, the switching circuits 655 and 656 can simultaneously select a plurality of terminals. In addition, the control circuit 657 performs a switching operation of the switching circuits 655 and 656, and a pulse generation power supply 654.
The pulse generation timing and pulse boosting are controlled.

The energization process has already been described with reference to FIGS.
7, the description is omitted. <Embodiment 12> In this embodiment, an example in which a transistor as a constant current element is formed at an end of a wiring in a row direction will be described.

FIG. 27 is a block diagram showing a schematic configuration of an electric circuit for performing energization forming in the present embodiment. In FIG. 27, reference numeral 14 denotes a surface conduction electron-emitting device, which forms a thin film including an electron-emitting portion by performing an energization forming process on the thin film for forming an electron-emitting portion (inside 14). In the present embodiment, the electron source element 1 is formed only by the surface conduction electron-emitting elements 14 and has an M × N matrix arrangement. Reference numeral 12 denotes a row direction wiring, and 13 denotes a column direction wiring. A constant current element 818 using a transistor is formed at an end of the row wiring 12. As described above, an electron source 753 (hereinafter, referred to as an electron source 753) including many surface conduction electron-emitting devices 14 arranged on an M × N matrix is configured.

Reference numeral 754 denotes a pulse generation source, which generates a forming pulse. 755 and 756 are switching circuits, and 757 is a control circuit. The switching circuit 755 includes a switching element for switching between applying a forming pulse from the pulse generation power supply 754 to the terminals DX1 to DXm of the row direction wiring and grounding to the ground, and a column direction wiring for selecting an element for forming. And switch elements for selecting the terminals DY1 to DYn. The switching circuit 756 is composed of a switch element that switches between connecting the terminals DY1 to DYn of the column direction wiring to the ground or setting the state to the potential Vy. Further, the switching circuits 755 and 756 can select a plurality of terminals simultaneously. Further, the control circuit 757 performs a switching operation of the switching circuits 755 and 756, and a pulse generation power supply 754.
The pulse generation timing and pulse boosting are controlled.

The energization process has already been described with reference to FIGS.
7, the description is omitted. As described above, according to the fourteenth to nineteenth embodiments, the energization forming process is performed on the conductive film of the surface conduction electron-emitting device before the electron emission portion is formed through the non-linear device having the non-linear voltage-current characteristics. Is performed, the connected non-linear element acts to cut off an excessive current flowing at the time of energization forming, so that a surface conduction type emission element having extremely poor electron emission characteristics due to an excessive current flowing through the conductive film. It is possible to prevent the formation, and a uniform element can be formed.

The present invention may be applied to a system including a plurality of devices such as a host computer, an interface, and a display device, or may be applied to a device including one device. Needless to say, the present invention is also applicable to a case where the present invention is achieved by supplying a program stored in a storage medium to a system or an apparatus. In this case, a recording medium storing the program according to the present invention constitutes the present invention. Then, by reading the program from the recording medium to a system or an apparatus, the system or the apparatus operates in a predetermined manner.

[0178]

As described above, according to the present invention, a plurality of electron-emitting devices maintain a constant resistance state up to a predetermined voltage value when driving a plurality of electron sources in a voltage modulation drive. When a voltage higher than the voltage value is applied, a non-linear element having a voltage-current characteristic that becomes a constant current state can perform a simple gamma correction by the action of a non-linear element, and at the same time, an element flows due to excessive current flowing. To prevent deterioration and destruction of the product.

In addition, since the conductive film before the electron-emitting portion of the electron-emitting device is formed through the non-linear device having the non-linear voltage-current characteristics, the energization forming process is performed. Since it acts to block an excessive current that flows sometimes, it is possible to prevent the formation of an electron-emitting device having extremely poor electron emission characteristics due to an excessive current flowing through the conductive film, and to form a uniform device. I can do it. Therefore, the image forming apparatus including the formed electron source can stably form a high-quality image.

[Brief description of the drawings]

FIG. 1 is an example of a conventionally known surface conduction electron-emitting device.

FIG. 2 is a diagram illustrating a wiring method of an electron-emitting device in which a problem has occurred.

FIG. 3 is a diagram showing a typical example of a characteristic of an emission current Ie with respect to an applied voltage Vf of a surface conduction electron-emitting device.

FIG. 4 is a diagram showing a case in which an emission current Ie produces n gradations (Ie
FIG. 3 is a diagram showing applied voltages (Vf1 to Vfn) necessary for the first to fifth Ien).

FIG. 5 is a plan view for explaining a configuration of a planar surface conduction electron-emitting device.

FIG. 6 is a cross-sectional view for explaining a configuration of a planar surface conduction electron-emitting device.

FIG. 7A is a cross-sectional view for explaining a manufacturing step of the surface conduction electron-emitting device.

FIG. 7B is a cross-sectional view for explaining the manufacturing process of the surface conduction electron-emitting device.

FIG. 7C is a cross-sectional view for explaining the manufacturing process of the surface conduction electron-emitting device.

FIG. 7D is a cross-sectional view for explaining the manufacturing process of the surface conduction electron-emitting device.

FIG. 7E is a cross-sectional view for explaining the manufacturing step of the surface conduction electron-emitting device.

FIG. 8 is a diagram illustrating an example of an applied voltage waveform during energization forming processing.

FIG. 9A is a diagram showing an example of an applied voltage waveform at the time of energization activation processing.

FIG. 9B is a diagram showing an example of a change in emission current Ie during the activation process.

FIG. 10 is a cross-sectional view of a vertical surface conduction electron-emitting device.

FIG. 11A is a cross-sectional view showing a step of manufacturing a vertical surface conduction electron-emitting device.

FIG. 11B is a cross-sectional view showing a step of manufacturing the vertical surface conduction electron-emitting device.

FIG. 11C is a cross-sectional view showing the manufacturing process of the vertical surface conduction electron-emitting device.

FIG. 11D is a cross-sectional view showing the manufacturing process of the vertical surface conduction electron-emitting device.

FIG. 11E is a cross-sectional view showing a step of manufacturing the vertical surface conduction electron-emitting device.

FIG. 11F is a cross-sectional view showing a step of manufacturing the vertical surface conduction electron-emitting device.

FIG. 12 is a diagram showing typical characteristics of a surface conduction electron-emitting device.

FIG. 13 is a plan view of a substrate of the multi-electron beam source.

FIG. 14 is a partial cross-sectional view of a substrate of the multi-electron beam source.

FIG. 15 is a perspective view in which a part of a display panel of the image display device is cut away.

FIG. 16A is a plan view illustrating a phosphor array of a face plate of a display panel.

FIG. 16B is a plan view illustrating another phosphor array of the face plate of the display panel.

FIG. 17 is a schematic configuration diagram of a drive circuit for performing television display based on an NTSC television signal.

FIG. 18 is a diagram showing a multi-electron beam source in which surface conduction type emission elements in which non-forming elements are connected in series in a 6 × 6 matrix are arranged in a matrix.

FIG. 19 is a diagram illustrating an example of an image pattern to be displayed.

20 is a diagram showing voltage values applied to the multi-electron beam source through terminals Dx1 to Dx6 and terminals Dy1 to Dy6 while emitting the third line of the image in FIG.

FIG. 21 is a timing chart showing how a multi-electron beam source is driven according to the display pattern of FIG.

FIG. 22 is a timing chart of the entire operation of the apparatus of FIG. 17;

FIG. 23 is a diagram showing an example of device current and emission current characteristics with respect to an applied voltage of a surface conduction electron-emitting device.

FIG. 24 is a diagram showing emission current characteristics with respect to applied voltage when the surface conduction electron-emitting device is driven via a resistance of 300Ω.

FIG. 25 is a diagram showing emission current characteristics with respect to an applied voltage of a nonlinear element.

FIG. 26 is a diagram showing electron emission current characteristics with respect to applied voltage when a surface conduction electron-emitting device is driven via a non-linear element.

FIG. 27 is a diagram showing a circuit configuration for executing energization forming processing of an electron source in which a transistor as a constant current element is formed at an end of a row direction wiring.

FIG. 28 is a diagram showing a part of a schematic configuration of driving an electron source.

FIG. 29 is a plan view of a multi-electron source.

FIG. 30 is a sectional view of a multi-electron source.

FIG. 31A is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31B is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source.

FIG. 31C is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source.

FIG. 31D is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31E is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31F is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31G is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31H is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31I is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source.

FIG. 31J is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 31K is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source.

FIG. 32 is a plan view showing a part of an electron-emitting-portion-forming thin film mask for forming a surface conduction electron-emitting device.

FIG. 33 is a diagram illustrating an example of a display panel of an image forming apparatus to which an electron source element having a connection configuration of a surface conduction type emission element and a low current diode element is applied.

FIG. 34 is a diagram illustrating a part of a configuration of driving an electron source using a transistor as a constant current element.

FIG. 35 is a plan view of the multi-electron source of FIG. 34.

FIG. 36 is a sectional view of the multi-electron source of FIG. 34;

FIG. 37A is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37B is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37C is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37D is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37E is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37F is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37G is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37H is an explanatory view of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 37I is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 34;

FIG. 37J is an explanatory view of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 34.

FIG. 38 is a diagram showing a part of a schematic configuration of driving a multi-electron source in which a constant current element is formed at a column direction wiring end;

FIG. 39 is a plan view of the multi-electron source in FIG. 38.

FIG. 40 is a cross-sectional view of the multi-electron source of FIG. 38.

FIG. 41A is an explanatory diagram of the manufacturing process of the nonlinear element portion of the multi-electron source in FIG. 38.

FIG. 41B is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38.

FIG. 41C is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38.

FIG. 41D is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38.

FIG. 41E is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38.

FIG. 41F is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 38;

FIG. 41G is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38.

41H is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38. FIG.

FIG. 41I is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 38;

FIG. 41J is an explanatory view of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38.

41K is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 38. FIG.

FIG. 42 is a diagram showing a part of a schematic configuration of driving a multi-electron source in which a transistor as a constant current element is formed at an end of a wiring in a column direction;

FIG. 43 is a plan view of the multi-electron source in FIG. 42.

FIG. 44 is a sectional view of the multi-electron source of FIG. 42;

FIG. 45A is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45B is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 42;

FIG. 45C is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45D is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45E is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45F is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45G is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45H is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 45I is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 42;

FIG. 45J is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 42;

FIG. 45K is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 42.

FIG. 46 is a diagram showing a part of a schematic configuration of driving a multi-electron source in which a constant current element is formed at a row direction wiring end;

FIG. 47 is a plan view of the multi-electron source in FIG. 46.

FIG. 48 is a sectional view of the multi-electron source of FIG. 46;

FIG. 49A is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49B is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49C is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49D is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49E is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49F is an explanatory view of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49G is an explanatory view of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49H is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 46;

FIG. 49I is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 46;

FIG. 49J is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 49K is an explanatory diagram of the manufacturing step for the nonlinear element portion of the multi-electron source in FIG. 46;

FIG. 49L is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 46.

FIG. 50 is a diagram showing a part of a schematic configuration of driving a multi-electron source in which a transistor as a constant current element is formed at a row direction wiring end;

FIG. 51 is a plan view of the multi-electron source in FIG. 50.

FIG. 52 is a sectional view of the multi-electron source of FIG. 50;

FIG. 53A is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53B is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53C is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53D is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53E is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 50.

FIG. 53F is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 50.

FIG. 53G is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53H is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53I is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53J is an explanatory diagram of the step of manufacturing the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53K is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 53L is an explanatory diagram of the manufacturing step of the nonlinear element portion of the multi-electron source in FIG. 50;

FIG. 54 is a diagram showing a circuit configuration for performing energization forming processing on a surface conduction electron-emitting device to which a constant current diode device is connected.

FIG. 55 is a diagram showing voltage-current characteristics of a constant current diode.

FIG. 56 is a diagram showing a voltage waveform applied from a pulse generation source when energization forming is performed on a surface conduction electron-emitting device to which a low current element is connected.

FIG. 57 is a diagram showing an example of a current waveform flowing through a thin film for forming an electron-emitting portion based on a voltage applied from a pulse generation source when energization forming is performed on a surface conduction electron-emitting device connected to a low current device.

FIG. 58 is a diagram showing a circuit configuration for performing energization forming processing on a surface conduction electron-emitting device to which a transistor is connected as a constant current device.

FIG. 59 is a diagram showing a circuit configuration for executing energization forming processing of an electron source in which a constant current diode element is formed at a column direction wiring end.

FIG. 60 is a diagram showing a circuit configuration for executing energization forming processing of an electron source in which a transistor as a constant current element is formed at an end of a wiring in a column direction.

FIG. 61 is a diagram showing a circuit configuration for executing energization forming processing of an electron source having a constant current diode element formed at a row direction wiring end.

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-28137 (JP, A) JP-A-6-68820 (JP, A) JP-A-4-249026 (JP, A) JP-A-8-108 234696 (JP, A) JP-A-8-180799 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 1/316 G09G 3/20 G09G 3/22 H01J 9/02 H01J 31/12 H01J 31/15

Claims (17)

(57) [Claims] In a method of driving an electron source in which a plurality of surface conduction electron - emitting devices are connected to a row-direction wiring and a column-direction wiring and arranged in a matrix on a substrate, a voltage-modulated driving method is used. Emission current vs. voltage
Is constant up to a specified voltage value to increase linearity.
While maintaining the resistance state, the overcurrent of the surface-conduction emission device is suppressed.
In order to control the voltage, a voltage higher than the predetermined voltage value is applied.
Nonlinear element with a voltage-current characteristic that maintains a constant current state
Element and the surface connected in series to the nonlinear element
A conduction type emission element, wherein the row direction wiring and the column direction wiring are provided;
A driving method of the electron source, wherein a voltage modulation signal is applied via the device. 2. The method according to claim 1, wherein the non-linear element is connected to a row-direction wiring end. 3. The method of driving an electron source according to claim 1, wherein said nonlinear element is connected to a column direction wiring end. Wherein said non-linear element, a driving method of the electron source according to any one of claims 1及至claim 3, characterized in that the constant current diode. Wherein said non-linear element, a driving method of the electron source according to any one of claims 1及至claim 3, characterized in that it is a transistor. 6. A plurality of surface conduction electron - emitting devices are connected to a row-direction wiring and a column-direction wiring, and emit electrons with respect to an applied voltage when voltage modulation driving is performed in an electron source arranged in a matrix on a substrate. Current relationships
Is constant up to a specified voltage value to increase linearity.
While maintaining the resistance state, the overcurrent of the surface-conduction emission device is suppressed.
In order to control the voltage, a voltage higher than the predetermined voltage value is applied.
Element with voltage-current characteristics that maintains a constant current state
Are connected in series to the surface conduction electron-emitting device.
An electron source characterized in that: 7. The electron source according to claim 6 , wherein the non-linear element is connected to a row direction wiring end. 8. The electron source according to claim 6 , wherein the non-linear element is connected to a column-direction wiring end. Wherein said non-linear element, an electron source according to any one of claims 6及至claim 8, which is a constant current diode. Wherein said non-linear element, an electron source according to any one of claims 6及至claim 8, characterized in that it is composed of transistors. 11. An image forming apparatus comprising: an electron source; and an image forming member that forms an image by irradiating the electron source emitted from the electron source, wherein the electron source is any one of claims 6 to 10 . An image forming apparatus comprising the electron source according to any one of the above. 12. The image forming member, image forming apparatus according to claim 11, characterized in that it comprises a phosphor. 13. plurality of surface conduction electron-emitting devices, it is connected to the row-directional wiring and the column wiring, the method of manufacturing an electron source arranged in a matrix on a substrate, constant resistance up to a predetermined applied voltage value State and overcurrent
In order to suppress, a voltage higher than the predetermined voltage value is applied.
Then, the non-linear element which becomes a constant current state is
The electron emitting portion forming thin film connected in series with the electron emitting portion forming thin film
Applying a pulsed voltage signal to the shape element
An electron emitting portion is formed on the thin film for forming an electron emitting device.
And an energizing forming step . 14. The method according to claim 13 , wherein the non-linear element is connected to a row wiring end. 15. The method according to claim 13 , wherein the non-linear element is connected to a column-direction wiring end. 16. The non-linear element, method of manufacturing an electron source according to any one of claims 13及至claim 15 which is a constant current diode. 17. The non-linear element, method of manufacturing an electron source according to any one of claims 13及至claim 15, characterized in that it is a transistor.