JP3287713B2 - Image forming device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image forming apparatus having an electron-emitting device and an image forming member for forming an image by irradiating an electron beam, and more particularly, to an image forming apparatus having a phosphor as the image forming member. The present invention relates to a display device.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a hot cathode device and a cold cathode device, are known. Among these, among the cold cathode devices, for example, a surface conduction type emission device, a field emission type device (hereinafter referred to as FE type), a metal / insulating layer / metal type emission device (hereinafter referred to as MIM type), and the like are known. I have.

[0003] As a surface conduction type emission element, for example,
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, 1290 (1965)
Also, other examples described later are known.

The surface conduction electron-emitting device utilizes a phenomenon in which an electron is emitted when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. As this surface conduction type emission element, Sn described by Elinson et al.
In addition to those using the O ₂ thin film, those using the Au thin film [G. Dittmer: “Thin Solid Fi
lms ", 9,317 (1972)] and In ₂ O ₃ / S
nO ₂ thin film [M. Hartwell and
C. G. FIG. Fonstad: "IEEE Trans.
ED Conf. , 519 (1975)] and those using carbon thin films [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1
No. 22 (1983)].

As a typical example of the device configuration of these surface conduction electron-emitting devices, FIG. Hartwel
1 shows a plan view of an element according to the present invention. Referring to FIG.
And 304, a conductive thin film made of metal oxide formed by sputtering. The conductive thin film 304 is formed in an H-shaped planar shape as shown. An electron emission portion 305 is formed by subjecting the conductive thin film 304 to an energization process called energization forming described below. The interval L in the figure is set at 0.5 to 1 [mm], and W is set at 0.1 [mm]. Note that, for convenience of illustration, the electron emission unit 30
5 is shown in a rectangular shape at the center of the conductive thin film 304,
This is a schematic one and does not faithfully represent the actual position or shape of the electron-emitting portion.

[0006] M. In the above-described surface conduction electron-emitting device including the device by Hartwell et al., It is common to form an electron-emitting portion 305 by performing an energization process called energization forming on the conductive thin film 304 before performing electron emission. there were. That is, the energization forming means that a constant DC voltage or a DC voltage which is boosted at a very slow rate of, for example, about 1 V / min is applied to both ends of the conductive thin film 304 to energize the conductive thin film 304. Is locally destroyed, deformed, or altered to form the electron emission portion 305 in a state of high electrical resistance. Note that a crack is generated in a part of the conductive thin film 304 that has been locally broken, deformed, or altered. When an appropriate voltage is applied to the conductive thin film 304 after the energization forming, electrons are emitted in the vicinity of the crack.

[0007] Examples of the FE type are described in, for example, W.S. P.
Dyke & W. W. Dolan, "Field emi
session ", Advance in Electro
nPhysics, 8, 89 (1956) or C.I. A. Spindt, "Physical pr
operations of thin-film figure
ld emission cathodes with
molybdenium cones ", J. App.
l. Phys. , 47, 5248 (1976).

As a typical example of the FE type device configuration, FIG. A. 1 shows a cross-sectional view of a device by Spindt et al. In the figure, 310 is a substrate, 311 is an emitter wiring made of a conductive material, 312 is an emitter cone, 313 is an insulating layer, and 314 is a gate electrode. The present element applies an appropriate voltage between the emitter cone 312 and the gate electrode 314, thereby forming the emitter cone 31.
Field emission is caused from the front end of the second.

As another element configuration of the FE type, FIG.
There is also an example in which an emitter and a gate electrode are arranged on a substrate substantially in parallel with the plane of the substrate, instead of the laminated structure as in 1.

As an example of the MIM type, for example,
C. A. Mead, “Operation of tu
nnel-emission Devices, J. et al. A
ppl. Phys. , 32, 646 (1961). FIG. 3 shows a typical example of an MIM type device configuration.
It is shown in FIG. The figure is a sectional view, in which 320 is a substrate, 321 is a lower electrode made of metal, and 322 is a thickness of 1
A thin insulating layer of about 00Å, 323 has a thickness of 80 to 300Å
It is an upper electrode made of metal. In the MIM type, electrons are emitted from the surface of the upper electrode 323 by applying an appropriate voltage between the upper electrode 323 and the lower electrode 321.

The above-mentioned cold cathode device can obtain electrons at a lower temperature than the hot cathode device, and therefore does not require a heater for heating. Therefore, the structure is simpler than that of the hot cathode element, and a fine element can be produced. Also,
Even if a large number of elements are arranged on a substrate at a high density, problems such as thermal melting of the substrate hardly occur. In addition, unlike the hot cathode device, which operates by heating the heater, the response speed is slow, and the cold cathode device also has the advantage that the response speed is fast.

For this reason, research for applying the cold cathode device has been actively conducted.

For example, the surface conduction electron-emitting device has the advantage of being able to form a large number of devices over a large area because it has a particularly simple structure and is easy to manufacture among the cold cathode devices. Therefore, for example, Japanese Patent Application Laid-Open No.
As disclosed in JP-A-332-332, a method for arranging and driving a large number of elements has been studied.

As for the application of the surface conduction electron-emitting device, for example, an image forming apparatus such as an image display device and an image recording device, a charged beam source, and the like have been studied.

In particular, as an application to an image display device, for example, as disclosed in US Pat. No. 5,066,883, JP-A-2-257551 and JP-A-4-28137 by the present applicant, surface conduction is disclosed. An image display apparatus using a combination of a mold emission element and a phosphor that emits light by irradiation with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle.

A method of driving a large number of FE types is disclosed in US Pat. No. 4,904,8 by the present applicant.
No. 95. Further, as an example in which the FE type is applied to an image display device, for example, R.F. The flat panel display reported by Meyer et al. Is known. [R. M
eyer: “Recent Development
n Microtips Display at LE
TI ", Tech. Digest of 4th In
t. Vacuum Microele-troni
cs Conf. , Nagahama, pp .; 6-9
(1991)]

An example in which a number of MIM types are arranged and applied to an image display device is disclosed in, for example, Japanese Patent Application Laid-Open No.
No. 5,557,838.

[0018]

SUMMARY OF THE INVENTION The present inventors have developed various materials, including those described in the above-mentioned prior art.
We have tried cold cathode devices with manufacturing method and structure. Furthermore, research is being conducted on a multi-electron beam source in which a large number of cold cathode devices are arranged, and on an image display device using the multi-electron beam source.

The inventors have tried a multi-electron beam source by an electric wiring method shown in FIG. 28, for example. That is, it is a multi-electron beam source in which a large number of cold cathode devices are two-dimensionally arranged and these devices are wired in a matrix as shown.

In the figure, reference numeral 401 denotes a cold cathode element schematically, 402 denotes a wiring in a row direction, and 403 denotes a wiring in a column direction. The row wiring 402 and the column wiring 403 actually have finite electrical resistance, but are shown as wiring resistances 404 and 405 in the figure. The above-described wiring method is called simple matrix wiring.

Although a 6 × 6 matrix is shown for convenience of illustration, the size of the matrix is not limited to this. For example, in the case of a multi-electron beam source for an image display device, a desired image display Are arranged and wired only to perform the above.

In a multi-electron beam source in which cold cathode devices are arranged in a simple matrix wiring, an appropriate electric signal is applied to the row wiring 402 and the column wiring 403 in order to output a desired electron beam. For example, in order to drive an arbitrary one row of the cold cathode elements in the matrix, the selection voltage Vs is applied to the row direction wiring 402 of the selected row, and the non-selected row direction wiring 402 is simultaneously applied to the row direction wiring 402 of the non-selected row. A selection voltage Vns is applied. In synchronization with this, a driving voltage Ve for outputting an electron beam is applied to the column wiring 403. According to this method, if the voltage drop due to the wiring resistances 404 and 405 is neglected, the cold cathode element in the selected row has Ve−V
s is applied, and V CC is applied to the cold cathode elements in the non-selected rows.
A voltage of e-Vns is applied. If Ve, Vs, and Vns are set to appropriate voltages, electron beams of a desired intensity should be output only from the cold cathode elements in the selected row, and a different drive voltage Ve is applied to each of the column wirings. If applied, each of the elements in the selected row should output a different intensity electron beam. Further, if the length of time during which the drive voltage Ve is applied is changed, the length of time during which the electron beam is output should be changed.

Therefore, a multi-electron beam source in which cold cathode devices are arranged in a simple matrix has various applications. For example, if an electric signal corresponding to image information is appropriately applied, it is suitable as an electron source for an image display device. Can be used.

However, in a multi-electron beam source in which cold cathode devices are arranged in a simple matrix wiring, the following problems actually occur.

For example, FIG. 29 shows a cross section of an example of a conventional image display panel having a cold cathode element and a phosphor. In the figure, reference numeral 410 denotes a rear plate, 411 denotes a cold cathode element formed on the rear plate, 412 denotes a side wall, 413 denotes a face plate, and 414 denotes a phosphor formed on the inner surface of the face plate. A vacuum vessel is formed by the rear plate 410, the side wall 412, and the face plate 413. In such a display panel, display is performed by irradiating the phosphor 414 with the electron beam e ⁻ emitted from the cold cathode element 411 to emit visible light VL.

However, in such a display panel, there is a problem that the assembling accuracy at the time of manufacturing is insufficient, and the displayed image has insufficient brightness, unevenness, or color shift.

More specifically, when assembling the vacuum container, it is firmly adhered with an adhesive such as frit glass in order to have airtightness. However, in order to melt the frit glass, a high temperature of 400 ° C. or more is usually used. Need.
Even if the members are aligned with sufficiently high precision in advance, misalignment due to thermal expansion of the members and fixing jigs is likely to occur in this heating process, and once the members are bonded, the misalignment is corrected. That is virtually impossible.

For this reason, the substrate 41 on which the cold cathode device is formed
In many cases, an uncorrectable positional shift occurs in the positional relationship between 0 and the substrate 414 on which the phosphor is formed.

On the other hand, even if the substrate 410 on which the cold cathode device is formed and the substrate 413 on which the phosphor is formed are separate from the vacuum container and the structure is changed so that both substrates are fixed inside the vacuum container, the vacuum In the heating step for sealing the container, the positional relationship between the substrates is likely to shift due to thermal expansion.
Also in this structure, it is practically impossible to correct the position of the substrate fixed inside after the vacuum vessel is once sealed.

[0030] When the deviation in the positional relationship between the cold cathode devices and fluorescent material occurs, a cold cathode electron beams output from the element e ^- because the not exactly irradiate a predetermined phosphor, the end portion of the display image Chipping, lack of luminance, unevenness, color shift, and the like occur, causing a problem that image quality is significantly deteriorated. Further, since the direction and size of the positional deviation vary for each display panel, it is extremely difficult to provide a large number of display panels having uniform display performance.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to mainly displace the positional relationship between an electron-emitting device such as a cold cathode device and an image forming member such as a phosphor from a predetermined position. It is an object of the present invention to provide an image forming apparatus having means for preventing the image quality from being deteriorated even when assembled.

[0032]

According to the present invention, there is provided an electron beam source in which a plurality of electron-emitting devices are arranged in a matrix on a substrate, and a driving signal corresponding to an image signal is applied to the plurality of electron-emitting devices. A driving unit, an image forming member on which an image is formed by irradiation of an electron beam emitted from the electron emitting element, and a unit for applying a voltage to the image forming member,
The image forming member is a stripe-shaped (striped) member, and the plurality of electron-emitting devices include a negative electrode, an electron-emitting portion, and a positive electrode arranged in parallel on the substrate surface in a direction perpendicular to a direction in which the stripe extends. An image forming apparatus, wherein the driving signal is supplied to a driving unit that applies a driving signal to the electron emitting element according to a deviation of a relative position between the electron emitting element and the image forming member from a set value. An image forming apparatus includes means for correcting a color data array of an image signal.

Hereinafter, the present invention will be further described.

Hereinafter, for convenience of explanation, the direction in which the negative electrode, the electron-emitting portion, and the positive electrode of the electron-emitting device constituting the multi-electron beam source are arranged side by side will be referred to as the X direction, and the direction perpendicular thereto will be referred to as the Y direction. In addition, a stripe-shaped phosphor will be described as an example of the image forming member.

First, when the position of the phosphor with respect to the electron-emitting device is shifted in the Y direction with respect to the set value due to the positional relationship between the stripe-shaped phosphor and the electron-emitting device (perpendicular to each other) in the present invention, the electron beam Although the irradiation position is shifted from the set position, at least the adjacent stripe-shaped phosphor is not irradiated.

Thus, even if there is a displacement in the Y direction, it is possible to prevent the occurrence of color displacement.

Preferably, by making the phosphor region larger than the arrangement region of the electron beam source, the position of the phosphor with respect to the electron-emitting device is shifted in the Y direction with respect to the set value, in addition to the effect of the present invention. In this case, even if the electron beam is emitted from the electron-emitting device formed at the end of the predetermined region of the multi-electron beam source, the stripe-shaped phosphor is always irradiated.

Thus, even if there is a displacement in the Y direction, it is possible to prevent the occurrence of chipping at the end of the display image.

Further, as will be described later with reference to FIG. 15, even if there is a displacement in the X direction, it is possible to prevent the occurrence of chipping at the end of the displayed image.

[0040]

[0041]

[0042]

[0043]

[0044]

[0045]

[0046]

That is, in the present invention, when a position shift exceeding the arrangement pitch of the stripe-shaped phosphors occurs, the drive signal supplied to the electron-emitting device is shifted by the number of shifted pitches. For example, when a displacement exceeding 2 pitches but smaller than 3 pitches occurs in the X direction, the arrangement of image signals is adjusted by 2 pitches,
Effectively, a drive signal based on an image signal shifted by two elements from the initial setting is applied to the electron-emitting device. As a result, even when a displacement exceeding one pitch of the phosphor array pitch occurs, the correction amount of the electron beam trajectory can be reduced to one pitch or less. For this reason, when the trajectory of the electron beam is corrected, it is possible to prevent a change in the shape of a bright spot, a shift in luminance, and a decrease in the dynamic range of gradation.

[0048]

[0049]

Also, preferably, by using a horizontal field emission device as the electron emission device, the image display device according to the above invention can be realized with a simple configuration.

Preferably, by using a surface conduction electron-emitting device as the electron-emitting device, the image display device according to the above-described invention can be realized with a simple configuration and a simple manufacturing method.

[0052]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the image display apparatus of the present invention will be described. For convenience of explanation, the structure and manufacturing method of a display panel, the preferred structure and manufacturing method of an electron-emitting device, the structure of an electric circuit, and the procedure of correction are described in this order. State. (Reference Example 1)

(Structure and Manufacturing Method of Display Panel) First, the structure and manufacturing method of a display panel of an image display device to which the present invention is applied will be described with reference to specific examples.

FIG. 2 is a perspective view of a display panel used in the embodiment described below, in which a part of the panel is cut away to show the internal structure.

In the figure, 5 is a rear plate, 6 is a side wall, 7 is a face plate, and 5 to 7 form an airtight container for maintaining the inside of the display panel at a vacuum. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in air or nitrogen atmosphere, 10 at 400-500 degrees
Sealing was achieved by firing for at least minutes. A method of evacuating the inside of the airtight container to a vacuum will be described later.

The substrate 1 is fixed to the rear plate 5, and N × M electron-emitting devices 2 are formed on the substrate (N and M are positive integers of 2 or more; For example, in a display device for displaying high-definition television, it is desirable to set N = 3000 and M = 1000 or more. In Examples and Examples described below, N = 3072 and M = 1024.) The N
The × M electron-emitting devices are arranged in a simple matrix by M row-directional wirings 3 and N column-directional wirings 4. The portion constituted by 1 to 4 is referred to as a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail.

In this embodiment and the embodiments described below, the substrate 1 of the multi-electron beam source is fixed to the rear plate 5 of the airtight container. However, the substrate 1 of the multi-electron beam source has a sufficient strength. In the case of a multi-electron beam source substrate as a rear plate of an airtight container,
You may use itself.

The fluorescent film 8 is formed on the lower surface of the face plate 7. Since the present embodiment and the embodiments described below are color display devices, phosphors of three primary colors of red, green, and blue used in the field of CRT are separately applied to a portion of the fluorescent film 8. The phosphor of each color is, for example, as shown in FIG.
The black conductor 10 is provided between the stripes of the phosphor as shown in FIG. The purpose of providing the black conductor 10 is to prevent the display color from being shifted even if there is a slight shift in the electron beam irradiation position, and to prevent the reflection of external light to prevent the reduction of the display contrast. And preventing charge-up of the fluorescent film by the electron beam. Although graphite is used as a main component for the black conductor 10, any other material may be used as long as it is suitable for the above purpose.

A metal back 9 known in the field of CRTs is provided on the surface of the fluorescent film 8 on the rear plate side. The purpose of providing the metal back 9 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 8, to protect the fluorescent film 8 from the collision of negative ions, and to increase the electron beam acceleration voltage. To act as an electrode for applying
For example, the fluorescent film 8 may function as a conductive path for excited electrons. The metal back 9 was formed by forming the fluorescent film 8 on the face plate substrate 7, then smoothing the surface of the fluorescent film, and vacuum-depositing A1 thereon.
When a fluorescent material for low voltage is used for the fluorescent film 8, the metal back 9 is not used.

In order to apply an acceleration voltage and to improve the conductivity of the fluorescent film, the face plate substrate 7 and the fluorescent film 8 are used.
A transparent electrode made of, for example, ITO may be provided between the two.

Incidentally, Lh in the figure indicates the distance between the electron-emitting device 2 and the fluorescent film 8.

D _{x1 to} D _xm and D _{y1 to} D _yn and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel to an electric circuit (not shown). D _{x1 to} D _xm are the row wirings 3 of the multi-electron beam source
And D _{y1 to} D _yn are the row direction wirings 4 of the multi-electron beam source.
And Hv are electrically connected to the metal pack 9 of the face plate.

In order to evacuate the inside of the hermetic container, after the hermetic container is assembled, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is evacuated to a degree of vacuum of about 10 ^-7 [Torr]. Exhaust until After that, the exhaust pipe is sealed,
In order to maintain the degree of vacuum in the airtight container, a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after sealing. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the airtight container is 1 × 10 ⁻⁵ or 1 × due to the adsorption action of the getter film.
The degree of vacuum is maintained at 10 ^-7 [Torr].

Next, the setting position of the electron-emitting device 2 formed on the substrate 1 and the setting position of the stripe-shaped phosphor formed on the face plate 7 will be described with reference to FIG.

FIG. 1A is a schematic plan view of the substrate 1.

In the figure, reference numeral 2 denotes an electron-emitting device, and the arrow shown in the figure indicates the direction in which the electron-emitting device is formed. Details will be described later together with the typical structure.) For convenience of illustration, only 4 × 5 = 20 elements are shown, but in fact much more electron emitting elements are X
It is formed in a matrix along the direction and the Y direction.
Also, illustration of the row direction wiring and the column direction wiring is omitted.

FIG. 1B is a schematic plan view of the face plate 7.

In the drawing, reference numeral 11 denotes a stripe-shaped fluorescent material elongated in the Y 'direction (the drawing is a plan view seen from the display surface side of the display device, and is formed on the lower surface of the face plate 7). Although the phosphor 11 and the black conductor 10 are originally hidden and should not be seen, they are shown as if they were formed on the display surface side for convenience of explanation of the set position.) For convenience of illustration, only four stripes are shown, but in reality, much more stripe-shaped phosphors are formed as in the case of the electron-emitting device.

The rectangular mark AE formed on the substrate 1 and the cross mark AP formed on the face plate 7 are alignment marks.
Is used as a reference for positioning when sealing, or when detecting a positional shift between the substrate 1 and the face plate 7 after sealing. Needless to say, the shape, number, and position of the alignment marks need not be limited to the illustrated example.

The substrate 1 is designed such that the X direction coincides with the direction of the horizontal scanning line on the display screen, and the Y direction coincides with the direction of the vertical scanning line on the display screen. The face plate 7 is designed such that the X 'direction matches the direction of the horizontal scanning line on the display screen, and the Y' direction matches the direction of the vertical scanning line on the display screen. However, as described above, it is difficult to assemble the substrate 1 and the face plate 7 as designed without any displacement.
In rare cases, the values completely match the design values, but it is appropriate that a large number of actually assembled panels have some degree of misalignment. The setting positions of the electron-emitting device 2 and the phosphor 11 will be described in more detail.

The electron-emitting devices 2 are arranged at a pitch of Px in the X direction and at a pitch of Py in the Y direction. The phosphors 11 are arranged at a pitch of Px in the X 'direction. Note that the sizes of Px and Py were set in accordance with the resolution required for the display device.

When assembling the display panel, the alignment marks AP are aligned so that the crosses are inscribed in the rectangle of the alignment marks AE, but the position of the phosphor 11 is shifted from a position vertically above the electron-emitting device 2. Designed to work. That is, the alignment mark AE
The distance LE in the X direction from the device to the electron-emitting device 2 and the distance LP in the X ′ direction from the alignment mark AP to the phosphor 11 are not equal, but satisfy the relationship defined by the following equation [1]. Is set to

LP = LE + Lef [1]

Here, Lef is a numerical value determined by parameters such as a drive voltage applied to the electron-emitting device, a voltage applied to the phosphor, and a distance between the electron-emitting device and the phosphor. Lef will be described in detail later using Equation [3], but it is a distance which is deflected in the X direction to reach the electron beam phosphor.

The length PHy of the striped phosphor 11 in the Y ′ direction is set to be larger than the length EBy in the Y direction of the region where the electron-emitting devices 2 are formed on the substrate 1.

EBy <PHy [2]

By satisfying the expression (2), even if the stripe-shaped phosphors are displaced in the Y direction, it is possible to prevent color displacement and luminance reduction. This will be described later in detail with reference to FIG. In addition, PHy
Is larger than EBy, the tolerance for the displacement of the phosphor in the Y direction is increased. However, if PHy is too large, there is a disadvantage that the display panel becomes large. Therefore, it is desirable to statistically measure (or predict) the amount of displacement in the Y direction that occurs when the display panel is manufactured, and to set the minimum size within a range in which the displacement can be tolerated.

Therefore, in the first embodiment, PHy was set to 1.1 × EBy.

(Preferred Structure and Manufacturing Method of Electron-Emitting Device) As the electron-emitting device 2 used for the substrate shown in FIG. 1A, one having the following characteristics is selectively used. That is, in a driving state (a state in which a driving voltage for emitting an electron beam is applied to the electron-emitting device), the space around the electron-emitting portion of the electron-emitting device passes through the electron-emitting portion from the substrate plane to the phosphor screen. This is an element in which an asymmetric potential distribution is generated with respect to a normal line.

A specific description will be given with reference to FIG.

FIG. 4A is a cross-sectional view for explaining an electron-emitting device used in the present invention. In FIG. 4, reference numeral 20 denotes a substrate provided with the electron-emitting device, 21 denotes a positive electrode of the electron-emitting device,
2 is a negative electrode of the electron-emitting device, 23 is an electron-emitting portion of the electron-emitting device, 24 is a target of the electron beam, VF is a power supply for applying a drive voltage Vf [V] to the electron-emitting device, VA
Is a power supply for applying a target voltage Va [V] to the target 24 (note that in an actual image display device, the target 24 is a fluorescent material.
a> Vf. ).

The electron-emitting device used in the present invention includes at least the positive electrode 21, the negative electrode 22, and the electron-emitting portion 23 as constituent members, and these constituent members are formed side by side on the upper surface of the substrate 20. (In the following description, the upper surface of the substrate 20 is referred to as a substrate plane.)

For example, the electron-emitting devices shown in FIGS. 31 and 32 do not correspond to the electron-emitting devices arranged in the plane of the substrate because their constituent members are vertically stacked on the substrate plane. Emission elements are relevant.

In such an electron-emitting device, the electron beam emitted from the electron-emitting portion 23 generally has an initial velocity component in the direction from the negative electrode 22 to the positive electrode 21. Therefore, the electron beam does not travel in the vertical direction from the substrate plane.

Further, in the case of such an electron-emitting device, since the positive electrode 21 and the negative electrode 22 are arranged in a plane of the substrate, the potential distribution generated in the space above the electron-emitting portion 23 when a driving voltage is applied is The distribution is asymmetric with respect to a line passing through the emission part 23 and perpendicular to the substrate plane (that is, a dashed line in FIG. 4A). FIG. 4A shows a potential distribution between the electron-emitting device and the target 24 by a dotted line. As shown,
The equipotential surface is substantially parallel to the substrate plane near the target 24, but the drive voltage Vf near the electron-emitting device.
It becomes inclined due to the effect of [V]. Therefore, the electron beam emitted from the electron emitting portion 23 receives a force in the Z direction due to the oblique potential while flying in space,
Force is also applied in the direction, and the trajectory draws a curve as shown.

For the two reasons described above, the position where the electron beam irradiates the target 24 is shifted from the position vertically above the electron emitting portion by the distance Lef in the X direction. FIG. 4B is a plan view when the target 24 is viewed from above, and 25 in the figure schematically shows the electron beam irradiation position on the lower surface of the target.
(1) is a cross-sectional view taken along the dashed-dotted line JJ 'of (2). ).

Therefore, in order to generally express how the irradiation position of the electron beam on the target deviates from the position vertically above the electron-emitting portion, the vector E is conveniently used.
The direction and distance of the shift are expressed using f.

First, it can be said that the direction of the vector Ef is equal to the direction in which the negative electrode, the electron-emitting portion, and the positive electrode of the electron-emitting device are arranged on the plane of the substrate. For example, in the case of FIG. 4, since the negative electrode 22, the electron emitting portion 23, and the positive electrode 21 of the electron-emitting device are sequentially arranged on the substrate 20 along the X direction, the vector Ef has the same direction as the X direction. .

Note that, for convenience of illustrating the direction in which the electron-emitting devices are formed on the substrate plane and the direction of the vector Ef, these will be schematically represented by a method illustrated in FIG. FIG. 5A shows an example in which the negative electrode, the electron-emitting portion, and the positive electrode of the electron-emitting device 1 are formed on a substrate plane along the X direction, and FIG. It is an example formed in the direction of.

The magnitude of the vector Ef (that is, L
ef) is determined depending on the distance Lh between the electron-emitting device and the target, the drive voltage Vf of the electron-emitting device, the potential Va of the target, the type and shape of the electron-emitting device, etc. ] Formula.

[0091]

[Outside 1] Here, Lh [m] is the distance between the electron-emitting device and the target Vf [V] is the drive voltage applied to the electron-emitting device Va [V] is the voltage applied to the target K is the type and shape of the electron-emitting device Constants to be Determined When calculating the approximate numerical value by the equation [3], if the type or shape of the electron-emitting device to be used is unknown, K = 1 is substituted.

If the type and shape of the electron-emitting device are known, the constant K of the electron-emitting device is determined by experiment or computer simulation.

In order to obtain Lef with higher accuracy, it is desirable that K is not a constant but a function of Vf. However, a constant is sufficient for the accuracy required when designing an image display device. Often.

Next, the structure and manufacturing method of the electron-emitting device will be described specifically and in detail.

As described above, the electron-emitting device used in the present invention includes the positive electrode, the negative electrode, and the electron-emitting portion as constituent members.
Moreover, these members are formed side by side on the plane of the substrate (note that a part of the negative electrode may be an element that also serves as an electron emitting portion).

Examples of devices satisfying such requirements include a surface conduction electron-emitting device and a horizontal field emission device. Hereinafter, the surface conduction type emission device and the horizontal field emission device will be described in this order.

The surface conduction electron-emitting device includes, for example, the embodiment shown in FIG. 30 and an embodiment in which fine particles are provided near the electron-emitting portion. As for the former, various materials are already known as described in the section of the prior art, but all of them are suitable as the electron-emitting device used in the present invention. As for the latter, the material, structure, manufacturing method and the like will be described in detail later, but all are suitable as the electron-emitting device used in the present invention. That is, in carrying out the present invention,
When using a surface conduction emission device, the material of the device,
There are no particular restrictions on the configuration, manufacturing method, and the like.

As for the surface conduction electron-emitting device,
The vector Ef indicating the direction in which the electron beam is deflected has the direction shown in FIG. In the figure, (1) is a cross-sectional view, (2) is a plan view, and in the figure, 40 is a substrate, 41 is a positive electrode, 42 is a negative electrode, 43 is an electron-emitting portion, and VF is for applying a drive voltage to the element. Power supply.

Next, the horizontal field emission device refers to a field emission device in which a negative electrode, an electron emission portion, and a positive electrode are particularly arranged in parallel along the plane of the substrate. For example,
The element (conventional FIG. 2) is not included in the horizontal category because the negative electrode, the electron-emitting portion, and the positive electrode are provided in a direction perpendicular to the plane of the substrate. The element exemplified in 3) is included in the horizontal category. FIG. 7 is a perspective view showing an example in which a typical horizontal electron-emitting device is formed along the X direction on the plane of the substrate, in which 50 is a substrate, 51 is a positive electrode, 52 is a negative electrode, and 53 is an electron. This is the discharge section. There are various types of horizontal electron-emitting devices other than those illustrated in FIG. 7. In short, the electron beam trajectory is deflected from the vertical direction as described with reference to FIG. 4. If there is, it is suitable as an element used in the first configuration of the present invention. Therefore, for example, a configuration in which a modulating electrode for modulating the intensity of the electron beam may be added to the configuration shown in FIG. In addition, the electron emission portion 53 may be a part of the negative electrode 52 serving as the same, or may be a member added on the negative electrode. Materials used for the electron-emitting portion of the horizontal field emission device include, for example, high melting point metals and diamonds, but are not limited thereto as long as the material emits electrons well.

As for the horizontal field emission device,
The vector Ef indicating the direction in which the electron beam is deflected has the direction shown in FIG. In the figure, (1) is a cross-sectional view, (2) is a plan view, and in the figure, 50 is a substrate, 51 is a positive electrode, 52 is a negative electrode, 53 is an electron-emitting portion, and VF is for applying a drive voltage to the element. Power supply.

The electron emission device suitable for use in the present invention has been described above. In the display device of Reference Example 1, a surface conduction type emission device was used.

Next, the surface conduction electron-emitting device used in the display panel of Reference Example 1 will be described. The present inventors have found that a surface conduction electron-emitting device in which an electron-emitting portion or its peripheral portion is formed of a fine particle film has excellent electron-emitting characteristics and is easy to design and manufacture. That is,
It can be said that it is the most suitable element for use in a multi-electron beam source for a large-screen, high-brightness image display device. Then, when a display panel was prepared using a planar surface conduction electron-emitting device formed from a fine particle film, extremely good results were obtained. In addition, a display panel produced using a vertical surface conduction electron-emitting device formed from a fine particle film also obtained good results. Therefore, the planar and vertical surface conduction electron-emitting devices formed from the fine particle film will be described in detail below.

[0103] First the plane type surface conduction electron-emitting device will be described first device structure and manufacturing method of a flat SCE type electron-emitting device.

FIGS. 9A and 9B are a plan view and a sectional view, respectively, for explaining the structure of a planar surface conduction electron-emitting device. In the figure, 101 is a substrate, 102 is a positive electrode, 1
Numeral 03 denotes a negative electrode, numeral 104 denotes a conductive thin film, numeral 105 denotes an electron emitting portion formed by an energization forming process, and numeral 113 denotes a thin film formed by an energization activation process.

As the substrate 101, for example, various glass substrates such as quartz glass and blue plate glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO ₂ is formed on the various substrates described above. A laminated substrate or the like can be used.

The positive electrode 102 and the negative electrode 103 provided on the substrate 101 so as to be parallel to the substrate surface are made of a conductive material. For example, Ni, C
metals including r, Au, Mo, W, Pt, Ti, Cu, Pd, Ag, or alloys of these metals, or metal oxides including In ₂ O ₃ —SnO ₂ ,
A material may be appropriately selected from semiconductors such as polysilicon and the like. An electrode can be easily formed by using a combination of a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching. However, the electrode can be formed by other methods (for example, printing technique). I can't wait.

The shapes of the positive electrode 102 and the negative electrode 103 are appropriately designed according to the application purpose of the electron-emitting device. In general, the electrode spacing L is usually designed by selecting an appropriate value from the range of several hundreds of square meters to several hundred micrometers, but among them, for application to a display device, it is preferable that the electrode spacing L be more than several micrometers. It is in the range of ten micrometers. As for the thickness d, an appropriate value is usually selected from the range of several hundreds of square meters to several micrometers.

A fine particle film is used for the conductive thin film 104. The fine particle film described here refers to a film including a large number of fine particles as constituent elements (including an island-shaped aggregate). When the fine particle film is examined microscopically, a structure in which the individual fine particles are spaced apart, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is usually observed.

The particle size of the fine particles used for the fine particle film is in the range of several to several thousand degrees, and preferably in the range of 10 to 200 degrees. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, conditions necessary for electrically good connection with the element electrode 102 or 103,
Conditions necessary for performing the energization forming described below satisfactorily, conditions necessary for setting the electric resistance of the fine particle film itself to a value to be described later, and the like are included. Specifically, it is set in the range of several thousand to several thousand, but the most preferable one is between 10 and 500.

Further, it may be used to form a fine particle film.
For example, Pd, Pt, Ru, Ag,
Au, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb and other metals, PdO, Sn
O_Two, In_TwoO_Three, PBO, Sb_TwoO_ThreeEtc.
Oxides and HfB_Two, ZrB₁, LaB₆, CeB₆, Y
B _Four, GdB_FourBorides such as TiC, Z
rC, HfC, TaC, SiC, WC, etc.
Carbide, TiN, ZrN, HfN, etc.
Nitrides, semiconductors such as Si and Ge,
Carbon, etc., and are appropriately selected from these.
It is.

As described above, the conductive thin film 104 is formed of a fine particle film.
^It was set to be within the range of ³ to 10 ⁷ [Ohm / □].

Since it is desirable that the conductive thin film 104 and the positive electrode 102 and the negative electrode 103 are electrically connected well, a structure in which a part of the conductive thin film 104 and one part overlap each other is adopted. In the example of FIG. 9,
Although the substrate, the positive electrode, the negative electrode, and the conductive thin film are laminated in this order, the substrate, the conductive thin film, the positive electrode, and the negative electrode may be laminated in this order from the bottom in some cases.

The electron emitting portion 105 is formed of the conductive thin film 1
This is a crack-like portion formed in a part of the conductive film 04 and has a higher electrical property than the surrounding conductive thin film.
The crack is formed by performing a later-described energization forming process on the conductive thin film 104. Fine particles having a particle size of several to several hundreds of mm may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 105 and its vicinity. The thin film 113 is formed by performing an energization activation process described later after the energization forming process.

The thin film 113 is made of any one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof.
More preferably, it is 300 [Å] or less.

Since it is difficult to accurately show the actual position and shape of the thin film 113, it is schematically shown in FIG. Further, in the plan view (a), an element in which a part of the thin film 113 is removed is illustrated.

The basic structure of the preferred element has been described above. In this embodiment, the following element was used.

That is, blue glass was used for the substrate 101, and a Ni thin film was used for the positive electrode 102 and the negative electrode 103. The electrode thickness d was 1000 [Å], and the electrode interval L was 2 [micrometers].

Pd or P as the main material of the fine particle film
Using dO, the thickness of the fine particle film was set to about 100 [Å], and the width W was set to 100 [micrometer].

Next, a description will be given of a method of manufacturing a suitable flat surface conduction electron-emitting device.

FIGS. 10A to 10D are cross-sectional views for explaining the manufacturing process of the surface conduction electron-emitting device. The notation of each member is the same as that of FIG.

1) First, a positive electrode 102 and a negative electrode 103 are formed on a substrate 101 as shown in FIG.

When forming, the substrate 1
After sufficiently washing 01 with a detergent, pure water, and an organic solvent, the material of the device electrode is deposited (for example, a vacuum film forming technique such as a vapor deposition method or a sbutter method may be used). . Thereafter, the deposited electrode material is patterned by using a photolithography / etching technique to form a pair of electrodes (102 and 103) shown in FIG.

2) Next, a conductive thin film 104 is formed as shown in FIG.

In the formation, first, an organic metal solution is applied to the substrate (a), dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. . here,
The organic metal solution is a solution of an organic metal compound whose main element is a material of fine particles used for the conductive thin film (specifically, Pd was used as a main element in this reference example.
In this embodiment, the dipping method is used as the coating method, but other methods such as a spinner method and a spray method may be used. ).

As a method for forming a conductive thin film formed of a fine particle film, a method other than the method of applying an organic metal solution used in the present embodiment, for example, a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method In some cases, a deposition method or the like is used.

3) Next, an appropriate voltage is applied between the positive electrode 102 and the negative electrode 103 from the forming power supply 110 as shown in FIG.
An electron emitting portion 1105 is formed.

The energization forming treatment is to energize the conductive thin film 104 made of a fine particle film and to appropriately break, deform, or alter the part to change the structure into a structure suitable for emitting electrons. This is the process that causes In a portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 105), an appropriate crack is formed in the thin film. In addition,
After formation, the electrical resistance measured between the positive electrode 102 and the negative electrode 103 is significantly increased as compared to before the electron emission portion 105 is formed.

FIG. 11 shows an example of an appropriate voltage waveform applied from the forming power supply 110 in order to describe the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulse-like voltage is preferable. In the case of this embodiment, a pulse width T is used as shown in FIG.
One triangular wave pulse was continuously applied at a pulse interval T2. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. Also, monitor pulses Pm for monitoring the state of formation of the electron-emitting portion 105 are inserted at appropriate intervals between the triangular-wave pulses, and the current flowing at that time is measured by an ammeter 11.
Measured at 1.

In this embodiment, for example, 10 ⁻⁵ [t
orr], for example, the pulse width T1 is 1 [millisecond], the pulse interval T2 is 10 [millisecond], and the peak value Vpf is 0.1 [V] for each pulse.
The pressure was increased. Then, the monitor pulse Pm was inserted at a rate of one every time five triangular waves were applied. The monitor pulse voltage Vpm was set to 0.1 [V] so as not to adversely affect the forming process. The electric resistance between the positive electrode 102 and the negative electrode 103 is 1 × 1
When the current reaches 0 ⁶ [Ohm], that is, when the monitor pulse is applied, the current measured by the ammeter 1111 is 1 × 10 ^−7.
[A] When the following conditions were reached, the energization related to the forming process was terminated.

The above method is a preferable method for the surface conduction electron-emitting device of the present reference example. For example, the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the element electrode interval L is changed. In such a case, it is desirable to appropriately change the energization conditions accordingly.

4) Next, as shown in FIG.
An appropriate voltage is applied between the positive electrode 102 and the negative electrode 103 from the activation power supply 112 to perform an energization activation process to improve electron emission characteristics.

The energization activation process is a process of energizing the electron-emitting portion 105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof (in the figure). Shows a deposit made of carbon or a carbon compound as the member 113.) Note that by performing the energization activation process, the emission current at the same applied voltage can be typically increased by 100 times or more as compared with before the energization activation process.

Specifically, 10 ⁻⁴ to 10 ⁻⁵ [tor
r], a voltage pulse is periodically applied in a vacuum atmosphere to deposit carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere.
The deposit 113 is any of single crystal graphite, polycrystal graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 [Å] or less, more preferably 3 [３].
00 [Å] or less.

In order to explain the energization method in more detail, FIG. 12A shows an example of an appropriate voltage waveform applied from the activation power supply 112. In the present reference example, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically. Specifically, the voltage Vac of the rectangular wave is 14 [V], and the pulse width T3 is 1 [mm]. Second] and the pulse interval T4 is 10 [milliseconds]. The above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.

Reference numeral 114 shown in FIG. 9D denotes an anode electrode for capturing the emission current Ie emitted from the surface conduction electron-emitting device, and includes a DC high-voltage power supply 115 and an ammeter 1
16 is connected (when the activation process is performed after the substrate 101 is incorporated in the display panel, the phosphor screen of the display panel is used as the anode electrode 114).

While the voltage is applied from the activation power supply 112, the emission current Ie is measured by the ammeter 116 to monitor the progress of the energization activation process, and the operation of the activation power supply 112 is controlled. Emission current Ie measured by ammeter 116
FIG. 12B shows an example. When the pulse voltage is started to be applied from the activation power supply 112, the emission current Ie increases with the passage of time, but eventually saturates and hardly increases. In this way, when the emission current Ie is almost saturated, the application of the voltage from the activation power supply 112 is stopped,
The energization activation process ends.

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. desirable.

As described above, the planar type surface conduction electron-emitting device shown in FIG. 10E was manufactured.

Vertical surface conduction electron- emitting device Next, another typical structure of a surface conduction electron- emitting device in which the electron-emitting portion or its periphery is formed of a fine particle film,
That is, the configuration of the vertical type surface conduction electron-emitting device will be described.

FIG. 13 is a schematic cross-sectional view for explaining the basic structure of a vertical type. In FIG.
2 is a positive electrode, 203 is a negative electrode, 206 is a step forming member, 20
4 is a conductive thin film using a fine particle film, 205 is an electron emitting portion formed by energization forming processing, and 213 is a thin film formed by energization activation processing.

The difference between the vertical type and the flat type described above is that the positive electrode 202 is provided on the step forming member 206 and the conductive thin film 204 covers the side surface of the step forming member 206. . Therefore, the element electrode interval L in the planar type shown in FIG. 9 is set as the step height Lg of the step forming member 206 in the vertical type. In addition, the substrate 2
01, the positive electrode 202, the negative electrode 203, and the conductive thin film 204 using the fine particle film, the materials listed in the description of the flat type can be used in the same manner. For the step forming member 206, an electrically insulating material such as SiO ₂ is used.

Next, a method for manufacturing a vertical surface conduction electron-emitting device will be described. FIGS. 14A to 14F are cross-sectional views for explaining a manufacturing process.
Same as 3.

1) First, as shown in FIG. 14A, a negative electrode 203 is formed on a substrate 201.

2) Next, as shown in FIG. 14B, an insulating layer for forming a step forming member is laminated. The insulating layer may be formed by stacking, for example, SiO ₂ by a sputtering method, but another film forming method such as a vacuum evaporation method or a printing method may be used.

3) Next, as shown in FIG. 14C, a positive electrode 202 is formed on the insulating layer.

4) Next, as shown in FIG. 14D, a part of the insulating layer is removed by using, for example, an etching method to expose the negative electrode 203.

5) Next, as shown in FIG. 17E, a conductive thin film 204 using a fine particle film is formed. For the formation, as in the case of the flat type, a film forming technique such as a coating method may be used.

6) Next, similarly to the case of the planar type, the energization forming process is performed to form an electron emission portion (the same process as the planar type energization forming process described with reference to FIG. 10C). Just do it.)

7) Next, similarly to the case of the above-mentioned flat type, a current activation process is performed to deposit carbon or a carbon compound in the vicinity of the electron emission portion (the flat type current described with reference to FIG. The same processing as the activation processing may be performed.)

As described above, the vertical surface conduction electron-emitting device shown in FIG. 14F was manufactured.

(Characteristics of Surface Conduction Emission Device Used in Display Device) The element structure and manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described above. Next, the characteristics of the device used in the display device will be described. Is described.

FIG. 15 shows a typical example of (emission current Ie) versus (element applied voltage Vd) characteristics of an element used in a display device. Since the emission current Ie changes by changing design parameters such as the size and shape of the element, the graph is shown in arbitrary units.

The element used in the display device has the following three characteristics regarding the emission current Ie.

First, a certain voltage (this is referred to as a threshold voltage Vth
The emission current Ie sharply increases when a voltage having the above magnitude is applied to the element, but the emission current Ie is hardly detected at a voltage lower than the threshold voltage Vth.

That is, the non-linear element has a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the voltage Vd applied to the element, the emission current Ie varies with the voltage Vd.
The magnitude of e can be controlled.

Third, since the response speed of the current Ie emitted from the element is fast with respect to the voltage Vd applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time for applying the voltage Vd. Can control.

Because of the above characteristics, the surface conduction electron-emitting device could be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, display can be performed by sequentially scanning the display screen. That is, the threshold voltage Vth is applied to the element being driven according to the desired light emission luminance.
The above voltage is appropriately applied, and a voltage lower than the threshold voltage Vth is applied to the non-selected elements. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, by using the second characteristic or the third characteristic, the light emission luminance can be controlled, so that a gradation display can be performed.

A multi-element in which a large number of elements are arranged in a simple matrix wiring
Structure of Electron Beam Source Next, the structure of a multi-electron beam source in which the above-mentioned surface conduction electron -emitting devices are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 16 is a plan view of the multi-electron beam source used for the display panel of FIG. On the substrate, surface conduction type emission elements similar to those shown in FIG. 9 are arranged, and these elements are wired in a simple matrix by row-direction wiring electrodes 3 and column-direction wiring electrodes 4.
An insulating layer (not shown) is formed between the row-directional wiring electrodes 3 and the column-directional wiring electrodes 4 at the intersections of the electrodes, so that electrical insulation is maintained.

FIG. 17 is a sectional view taken along the line AA ′ of FIG.
Shown in

Incidentally, the multi-electron source having such a structure is as follows.
After the row direction wiring electrode 3, the column direction wiring electrode 4, the interelectrode insulating layer (not shown), the device electrode of the surface conduction type emission device and the conductive thin film are formed on the substrate 1 in advance, the row direction wiring electrode 3 is formed. In addition, power was supplied to each element via the column-directional wiring electrodes 4 to perform the energization forming process and the energization activation process.

(Configuration of Electric Circuit) Next, the configuration of the electric circuit of the image display device of Reference Example 1 will be described with reference to FIG.

FIG. 18 is a block diagram showing the basic configuration of an electric circuit. In the figure, reference numeral 71 denotes a display panel, 72 denotes a scanning signal generator, 73 denotes a modulation signal voltage converter, 74 denotes a pulse width modulator, and 75 denotes a pulse width modulator. Is a serial / parallel converter, 76 is a timing control circuit, 77 is an arithmetic unit, 78 is a memory, 79 is a decoder, 80 is a constant voltage source, 81 is a constant voltage source, 82 is a control voltage source, 83 is a constant voltage source, 84 is a data array converter.

The function of each section will be described below.

The structure of the display panel 71 has already been described with reference to FIG. Terminals Dx1 to Dx1 of the display panel 71
Dxm is electrically connected to the scanning signal generator 72, terminals Dy1 to Dyn are electrically connected to the modulation signal voltage converter 73, and terminal Hv is electrically connected to the constant voltage source 83, respectively.

The scanning signal generator 72 is a circuit for generating a scanning signal for sequentially scanning the multi-electron beam source built in the display panel 71 in accordance with the timing of displaying an image. Specifically, the terminal D of the display panel 71
The selection voltage Vs [V] is applied to one of the x1 to Dxm, and the non-selection voltage Vns [V] is applied to the remaining (m-1) lines. The scan timing control signal Tscan generated by the timing control circuit 76 is First, the terminal to which the selection voltage Vs is applied is sequentially scanned. The selection voltage Vs is 0
[V] was set and supplied from the ground level.
As the non-selection voltage Vns, a voltage obtained by multiplying the electron emission threshold voltage Vth of the electron emission element described in FIG. 108 by 0.8 is set and supplied from the constant voltage source 80.

The modulation signal voltage converter 73 is a voltage conversion circuit for converting the voltage of the modulation signal output from the pulse width modulator 74 into a voltage suitable for driving a multi-electron beam source. Specifically, the high level of the modulation pulse output from the pulse width modulator 74 is converted to Vf [V], and the low level is converted to Vns [V]. As Vf [V], a voltage obtained by multiplying the electron emission threshold voltage Vth of the electron-emitting device by 1.6 is set as a reference value, and is appropriately corrected according to the displacement between the phosphor and the electron-emitting device. Vf [V] was supplied from the control voltage source 82 to the modulation signal voltage converter 73. As Vns [V], a voltage obtained by multiplying the electron emission threshold voltage Vth of the electron emission element by 0.8 is set.
1 supplied this.

The constant voltage source 83 applies a voltage of Va [V] to the fluorescent film of the display panel 71 via the terminal Hv.

In order to determine the output voltage of each power supply, it is necessary to consider the following requirements.

The power (Ie × Va) required to achieve the desired luminance can be applied to the phosphor.

When the driving conditions are substituted into the above equation [3], the electron beam irradiates a predetermined position of the phosphor.

Vs and Vns are set so that crosstalk does not occur between the electron-emitting devices wired in a simple matrix.

Thus, in the image display device of Reference Example 1, Vns = 7.2 in consideration of the characteristics of the surface conduction electron-emitting device used for the multi-electron beam source and the light emission characteristics of the phosphor.
[V] and Vf (reference value) = 14.2 [V], and Va = 5 [kV] in accordance with the emission characteristics of the phosphor film.

The decoder 79 is a circuit for decoding an image signal inputted from the outside. In the first embodiment, a decoding circuit for an NTSC television signal is used.
The decoder 79 outputs a synchronization signal Sync and image data R, G, and B. The synchronization signal Sync includes a vertical synchronization signal and a horizontal synchronization signal, and R, G, and B are red,
It contains luminance data for each color of green and blue.

The data arrangement converter 84 is a circuit for arranging the luminance data of the three primary colors supplied from the decoder 79 in accordance with the pixel arrangement of the display panel 71. That is, according to the arrangement of the striped phosphors of the three primary colors, R,
G and B are sampled and arranged, and a serial signal Da
Output as ta.

The timing control circuit 76 includes a decoder 79
A timing control signal (T) for adjusting the operation timing of each unit based on the synchronization signal Sync supplied from the
read, Tsft, Tmod, Tscan and other signals not shown).

The memory 78 stores the correction value table 1 and the correction value table 2, and reads out the stored contents based on the read timing control signal Tread supplied from the timing control signal 76. Correction value table 1
And the contents of the correction value table 2 are correction coefficients determined based on the amount of misalignment between the electron-emitting devices and the striped phosphor on the display panel 71 after the assembly is completed.

That is, the content of the correction value table 1 is a parameter for correcting the trajectory of the electron beam so that the electron beam irradiates a predetermined position of the phosphor, and is specifically applied to the electron-emitting device. This is a correction coefficient for the voltage Vf. Correction coefficient Cor read from correction value table 1
1 is supplied to the control voltage source 82, and acts to correct the output voltage Vf of the control voltage source 82.

The content of the correction value table 2 is a parameter for correcting a change in light emission luminance caused when the voltage Vf applied to the electron-emitting device is corrected by the correction value table 1, and more specifically, an image. This is a correction coefficient for data Data. Correction coefficient C read from correction value table 2
or2 is supplied to the arithmetic unit 77 and acts to correct the image data Data.

The calculator 77 is a calculator for correcting the image data Data supplied from the data array converter 84 based on the correction coefficient Cor2 read from the correction value table 2 of the memory 78.

The serial / parallel converter 75 is a circuit for serially / parallel converting the corrected image data Data 'output from the arithmetic unit 77 in units of one line of an image (ie, n pixels). The shift register provided with was used. The serial / parallel converter 75 outputs n parallel signals D1 to Dn. In addition,
A timing control signal Tsft supplied from the timing control circuit 76, a shift clock for operating the shift register, and a latch clock for transferring the data of one line to the latch when the data for one line is accumulated in the shift register are included. I have.

The pulse width modulator 74 has n pulse width conversion circuits, and based on each of D1 to Dn supplied from the serial / parallel converter 75, the pulse width modulation signals D1 'to Dn'. Is output. That is, based on the corrected image data, a pulse having a longer (shorter) width is output as the luminance is higher (lower). Pulse width modulation signal D1 '
The timing for outputting .about.Dn 'is managed by a control signal Tmod supplied from the timing control circuit 76, whereby the synchronization between the scanning signal output from the scanning signal generator 72 and the pulse width modulation signal is adjusted. .

(Procedure for Correction) Next, a procedure for preventing the image quality from deteriorating due to the displacement between the electron-emitting device and the phosphor in the image display device of Reference Example 1 will be described.

First, before starting the operation as the image display device, it is necessary to previously store the correction value in the memory 78 shown in FIG. This procedure will be described with reference to the flowchart of FIG.

S81 First, the display panel was assembled. That is, after aligning the substrate on which the electron-emitting device was formed and the face plate on which the phosphor was formed, the vacuum vessel was sealed, and the display panel of FIG. 2 was assembled.

S82 Next, the assembled display panel was inspected, and the deviation of the relative position between the electron-emitting device and the phosphor from the set value was measured.
Specifically, the alignment marks on the substrate on which the electron-emitting devices were formed and the alignment marks on the face plate were observed using a stereoscopic microscope, and the amount of deviation was measured. In some cases, the electron emitting element may be experimentally driven to emit light from the phosphor, and the actual light emitting position may be compared with the designed light emitting position to evaluate the deviation.

S83 Next, based on the deviation from the set value of the electron-emitting device and the phosphor measured in S82, the correction value of the drive parameter was calculated using a computer. The correction values of the drive parameters will be described later with reference to FIGS.

S84 Next, the correction value calculated in S83 was stored in the memory 78 of FIG.

The procedure for storing the correction value in the memory 78 has been described above. Next, the correction values stored in the memory 78 will be described with reference to FIG. 1 and FIGS.

As described above, in rare cases, the electron-emitting device and the phosphor may be assembled without positional deviation as designed, but in most cases the positional deviation has occurred, and the direction of the positional deviation has occurred. It can be said that the amount differs from panel to panel. Therefore, we classify the types of misalignment,
The contents of the correction values in each case will be described.

FIG. 20 is a plan view schematically showing the irradiation position of the electron beam when there is no displacement . The substrate on which the electron-emitting device shown in FIG. 1A is formed and the substrate shown in FIG. This illustrates a case where the face plate on which the stripe-shaped phosphors are formed is assembled without misalignment as designed.

The XY coordinates in the figure indicate the direction in which the electron-emitting devices are arranged, and AP and AE indicate the alignment marks. As shown in this figure, if the electron beam irradiates a predetermined position of the stripe-shaped phosphor naturally when it is assembled without misalignment as designed,
No problems such as color shift and reduction in luminance occur. Therefore, the output voltage of control voltage source 82 in FIG. 18 may remain at the reference value set at the time of design, that is, Vf = 14.2 [V]. Therefore, the content of the correction value table 1 in the memory 78 may be a control signal for the control voltage source 82 to output 14.2 [V]. In addition, the image data Data
May be output as it is even through the arithmetic unit 77. Therefore, the content of the correction value table 2 may be set to 1, for example, when a multiplier / divider is used for the calculator 77.

FIG. 21 is a schematic view illustrating a case where the stripe-shaped phosphors are displaced by a distance of dif1 along the Y-direction arrangement of the electron-emitting devices. It is a top view. Although the irradiation position of the electron beam is shifted in the Y direction from the setting, as described in the equation [2], in the present embodiment, the stripe is longer than the length EBy in the Y direction in which the electron-emitting devices are arranged on the substrate. Since the length Phy of the phosphor is set to be long, problems such as color misregistration and reduction in luminance do not occur. Therefore, FIG.
The output voltage of the control voltage source 82 may remain at the reference value set at the time of design, that is, Vf = 14.2 [V]. Therefore, the content of the correction value table 1 in the memory 78 may be a control signal for the control voltage source 82 to output 14.2 [V]. Further, the image data Data may be output as it is even through the arithmetic unit 77. Therefore, the contents of the correction value table 2 are as follows:
For example, if a multiplier / divider is used for the arithmetic unit 77,
It should just be set to 1.

FIG. 22 is a schematic view illustrating a case where the stripe-shaped phosphors are displaced by a distance of dif2 along the arrangement of the electron-emitting devices in the X-direction. It is a top view. As shown in the figure, the electron beam irradiates the black conductor 10 and the adjacent phosphor, and thus insufficient brightness and color shift occur. But,
In the present embodiment, the drive voltage of the electron-emitting device is corrected to correct the electron beam irradiation position in the direction of arrow p in the figure, so that insufficient luminance and color shift can be prevented.

That is, utilizing the relation of the above equation [3],
This is to correct the deflection distance of the electron beam by the size of dif2.

[0199]

[Outside 2] dif2 [m] is a distance Lh [m] at which the phosphor is displaced from the set position in the X direction. Lh [m] is a distance between the electron-emitting device and the phosphor. Vf [V] is a reference value Vf '[ V] is the corrected driving voltage of the electron-emitting device Va [V] is the voltage applied to the phosphor K is a constant determined by the type and shape of the electron-emitting device

When equation [4] is solved for Vf ′,

[0201]

[Outside 3] Becomes

Therefore, the correction value is stored in the correction value table 1 in the memory 78 so that the output voltage of the control voltage source 82 is corrected from Vf to Vf 'calculated by the equation [4'].

On the other hand, when the drive voltage of the electron-emitting device is corrected from Vf to Vf ', the irradiation position of the electron beam is corrected, but the emission current Ie increases, so that the brightness of the entire display image changes. That is, referring to the electron emission characteristics of FIG. 15, the emission current increases from Ie1 to Ie1 '. For this reason, the luminance of the entire display image becomes Ie '/ Ie times brighter than the original design. Therefore, the image data Data is corrected to prevent a change in luminance. In the present embodiment, a multiplier / divider is used as the arithmetic unit 77, and Ie / Ie 'is stored as the correction value in the correction value table 2 of the memory 78.

By storing the above contents in the correction value table 1 and the correction value table 2 of the memory 78, when the phosphor is shifted in the Y direction, the irradiation position and the irradiation charge amount of the electron beam are corrected. It became possible to do. Although FIG. 22 illustrates the case where the displacement of the fluorescent material occurs only in the X direction, for example, when the displacement in the Y direction as illustrated in FIG. It is a matter of course that the value should be stored.

The angle of the phosphor (face plate) is shifted
When assembled Te Figure 23, the face plate is rotated, a schematic plan view illustrating a case where an angle relative to the substrate formed with the electron-emitting device assembled deviates from a predetermined angle.

As shown, the electron beam was applied to the black conductor 1
Irradiation with 0 or adjacent phosphors causes insufficient brightness and color shift. In addition, since the electron beam irradiation position shifts differently depending on the position of the display screen, the deterioration of the image quality is not uniform over the entire screen.

However, in this embodiment, the drive voltage of the electron-emitting device is corrected, and the electron beam irradiation position is corrected in the directions of arrows p1 to p4 in the figure, so that insufficient luminance and color shift can be prevented. That is, the deflection distance of the electron beam is corrected using the relationship of the above equation [3] as in the case of FIG.

However, instead of performing the same correction for all the electron-emitting devices as in the case of FIG. 22, the correction was performed line by line for each line of the electron-emitting devices arranged in the X direction.

That is, the correction value table 1 in the memory 78
The control voltage source 8 stores the correction value of the drive voltage for each line of the electron-emitting device, and reads out this in synchronization with the timing of driving the electron-emitting device line by line.
The output voltage of No. 2 was corrected.

Further, in order to prevent a change in luminance due to the correction of the irradiation position of the electron beam, it is necessary to perform different corrections for the image data Data for each electron emission element line. Therefore, the correction value for each line is stored in the correction value table 2 of the memory 78, and is read out in synchronization with the input image data Data and corrected by the arithmetic unit 77.

As described above, the correction value is calculated for each line and stored in the correction value table 1 and the correction value table 2 in the memory 78, so that when the angle of the phosphor is shifted, the irradiation of the electron beam is performed. It became possible to correct the position and the irradiation charge amount.

In the above-mentioned reference example, the correction is performed in units of one line of the electron-emitting device. However, if more precise correction is required, the correction is performed for each electron-emitting device. Is desirable. In that case, the memory 78
The drive voltage correction value for each element of the electron-emitting device is stored in the correction value table 1 of n, and n control voltage sources 82 of FIG.
4, the output signals D1 'to Dn' may be individually corrected for voltage. In addition, in the correction value table 2 of the memory 78, a brightness correction value for each of the electron-emitting devices is stored,
The arithmetic unit 77 may perform a correction operation for each pixel of the image signal.

The image display device of Reference Example 1 has been described. As is clear from the description, it was possible to provide a good display image regardless of whether the electron-emitting device and the phosphor were misaligned.

Reference Example 2 Next, another reference example of the image display device will be described. However, the configuration and manufacturing method of the display panel, and the preferable structure and manufacturing method of the electron-emitting device are the same as those in the first embodiment, and thus the description is omitted. Hereinafter, the configuration of the electric circuit and the procedure of correction in Reference Example 2 will be described.

(Configuration of Electric Circuit) The configuration of the electric circuit of Reference Example 2 will be described with reference to FIG.

FIG. 24 is a block diagram showing a basic configuration of an electric circuit. In FIG. 24, 71 is a display panel, 72 is a scanning signal generator, 73 is a modulation signal voltage converter, 74 is a pulse width modulator, and 75 is a pulse width modulator. Is a serial / parallel converter, 76 is a timing control circuit, 77 is an arithmetic unit, 79 is a decoder, 80
Denotes a constant voltage source, 81 denotes a constant voltage source, and 84 denotes a data array converter. The functions of these circuits are the same as those of the circuit of the first embodiment described with reference to FIG. 85 is a memory, 86
Is a constant voltage source, and 87 is a control voltage source.

Reference Example 2 is different from Reference Example 1 in that the irradiation position of the electron beam was corrected by correcting the voltage Vf applied to the electron-emitting device in Reference Example 1, whereas Reference Example 2 was different from Reference Example 1. The point is that the irradiation position of the electron beam is corrected by correcting the voltage Va applied to the phosphor.
Therefore, the electric circuit of FIG. 24 is configured so that the voltage Va applied to the phosphor can be corrected according to the displacement between the electron-emitting device and the phosphor.

That is, the correction value table 3 in the memory 85
Stores a correction value of the voltage Va applied to the phosphor, and the control voltage source 87 connected to the terminal Hv of the display panel 71 outputs the correction value Cor read from the correction value table 3.
3 to output a voltage. Note that the control voltage source 87
The output voltage of the reference value is set to 5 [kV], and the correction value Cor
This was corrected according to 3.

The output voltages of the constant voltage source 80 and the constant voltage source 81 are set to Vns = 7.2 [V], and the constant voltage source 86
Was set to Vf = 14.2 [V].

(Procedure of Correction) Also in the image display device of the reference example 2, the correction values are stored in advance in the correction value table 3 and the correction value table 4 of the memory 85 according to the procedure shown in the flowchart of FIG. .

Therefore, the contents of the correction value will be described.

When there is no displacement , as shown in FIG. 20, when no displacement occurs, the output voltage of the control voltage source 87 becomes the reference value, that is, V
a = 5 [kV] may be maintained. Therefore, the correction value table 3 may store the control signal Cor3 for the control voltage source 87 to output 5 [kV]. Further, the image data Data may be output as it is even through the arithmetic unit 77. Therefore, the content of the correction value table 4 may be set to 1, for example, when a multiplier / divider is used for the calculator 77.

In the case where the phosphor is displaced in the Y direction as shown in FIG. 21, when the phosphor is displaced along the Y direction, the irradiation position of the electron beam is displaced in the Y direction from the setting. However, as described in the equation [2], in the present embodiment, the length PHy of the stripe-shaped phosphor is set to be longer than the length EBy in the Y direction in which the electron-emitting devices are arranged on the substrate. However, problems such as color shift and decrease in luminance do not occur. Therefore, the output voltage of control voltage source 87 in FIG. 24 is a reference value set at the time of design, that is, Va = 5 [k
V]. Therefore, the content of the correction value table 3 in the memory 85 may be the control signal Cor3 for the control voltage source 87 to output 5 [kV]. Further, the image data Data may be output as it is even through the arithmetic unit 77. Therefore, the content of the correction value table 4 may be set to 1, for example, when a multiplier / divider is used for the calculator 77.

When the phosphors are displaced in the X-direction, as shown in FIG. 22, when the stripe-shaped phosphors are displaced by a distance of dif2 along the X-direction arrangement of the electron-emitting devices, In the reference example, the voltage applied to the phosphor is corrected to correct the electron beam irradiation position in the direction of arrow p in the figure, so that insufficient luminance and color shift can be prevented.

That is, utilizing the relationship of the above equation [3],
This is to correct the deflection distance of the electron beam by the size of dif2.

[0226]

[Outside 4] dif2 [m] is a distance Lh [m] at which the phosphor is displaced from the set position in the X direction. Lh [m] is a distance between the electron-emitting device and the phosphor. Vf [V] is a driving voltage Va [V] of the electron-emitting device. The voltage Va ′ [V] applied to the phosphor is a corrected voltage K applied to the phosphor, and a constant determined by the type and shape of the electron-emitting device.

[5] By solving the equation [5] for Va ',

[0228]

[Outside 5] Becomes

Therefore, in the correction value table 3 of the memory 85, a correction value is stored so as to correct the output voltage of the control voltage source 87 from Va to Va 'calculated by the equation [5'].

On the other hand, the applied voltage of the phosphor is changed from Va to Va '.
Is corrected, the irradiation position of the electron beam is corrected,
Since the power for exciting the phosphor changes from Ie * Va to Ie * Va ', the luminance of the entire display image changes. That is, the brightness of the entire display image is V
a '/ Va times. Therefore, the image data Da
Ta is corrected to prevent a change in luminance. In this embodiment, a multiplier is used as the arithmetic unit 77, and Va / Va 'is stored as a correction value in the correction value table 4 of the memory 85.

By storing the above contents in the correction value table 3 and the correction value table 4 of the memory 85, when the phosphor is shifted in the Y direction, the irradiation position of the electron beam and the excitation power of the phosphor are changed. Can be corrected. Although FIG. 22 illustrates a case where the displacement of the phosphor occurs only in the X direction, for example, when the displacement in the Y direction as illustrated in FIG. It is a matter of course that the value should be stored.

In the case where the phosphor (face plate) is assembled with the angle shifted, as shown in FIG. 23, the case where the face plate is rotated and the angle with respect to the substrate on which the electron-emitting devices are formed is shifted from a predetermined angle. In the present embodiment, the applied voltage Va of the phosphor is corrected to correct the electron beam irradiation position in the directions of arrows p1 to p4 in the drawing, so that insufficient luminance and color shift can be prevented. That is, the deflection distance of the electron beam is corrected using the relationship of the above equation [3] as in the case of FIG.

However, instead of performing the same correction for all the electron-emitting devices as in the case of FIG. 22, the correction was performed line by line for each line of the electron-emitting devices arranged in the X direction.

That is, the correction value table 3 in the memory 85
Stores the correction value of Va for driving each line of the electron-emitting device, and reads out this in synchronization with the timing of driving the electron-emitting device line by line.
The output voltage of the control voltage source 87 was corrected.

Further, in order to prevent a change in luminance due to the correction of the electron beam irradiation position, it is necessary to perform different corrections for the image data Data for each electron emission element line. Therefore, the correction value for each line is stored in the correction value table 4 of the memory 85, and is read out in synchronization with the input image data Data and corrected by the arithmetic unit 77.

As described above, the correction value is calculated for each line and stored in the correction value table 3 and the correction value table 4 of the memory 85, so that when the angle of the phosphor is shifted, the irradiation of the electron beam is performed. It became possible to correct the position and the excitation power of the phosphor.

The image display device of Reference Example 2 has been described. As is clear from the description, it was possible to provide a good display image regardless of whether the electron-emitting device and the phosphor were misaligned.

(Example) Next, a preferred example of the present invention will be described.

First, the correction method of this embodiment will be described with reference to FIG.
This will be described with reference to FIG. (1) to (3) of FIG. 25 are cross-sectional views showing the trajectories until the electron beam emitted from the electron-emitting device irradiates the phosphor, and 1 in the figure is a substrate for forming the electron-emitting device. , 7 are face plates. For convenience of explanation, only one electron-emitting device is shown in the figure.

(1) As a result of assembling the display panel,
The figure shows a case where the electron-emitting device and the phosphor did not deviate at all from the designed position in the X direction.
Is a distance designed in advance using the equation [3].

In such a case, in this embodiment, as in the first and second embodiments, no correction is made to the values of the applied voltage Vf of the electron-emitting device and the applied voltage Va of the phosphor. .

(2) As a result of assembling the display panel,
The phosphor moves di in the X direction with respect to the design position shown in (1).
This shows a case where the position is shifted by f. Note that dif here
2 is smaller than the arrangement pitch of the phosphors.

In such a case, the voltage applied to the electron-emitting device so that the electron beam from the G-electron-emitting device appropriately irradiates the G phosphor, as in the first embodiment. Correct Vf. Or, the reference example 2
Similarly, the voltage Va applied to the phosphor is corrected.

(3) When the display panel is assembled,
This shows a case where the phosphor is shifted in the X direction by dif3 as a result of the phosphor being shifted in parallel or the angle in the X direction. Here, it is assumed that dif3 is larger than the arrangement pitch PX of the phosphors.

In such a case, as in the case of (2), V
It is also possible in principle to correct the trajectory of the electron beam by the distance dif3 by correcting f or Va. However, when the correction rate of Vf or Va increases, the spot shape of the electron beam irradiating the phosphor may change, or a change in luminance accompanying the voltage correction may not be compensated for by image data correction. Then, the shape of the bright spot is deformed, the brightness of the entire image is shifted, or the dynamic range of gradation cannot be sufficiently secured.

Therefore, in the image display apparatus of this embodiment, in such a case, the correction of the electron beam trajectory by the voltage correction is limited to a distance within one pitch of the phosphor array, and the drive signal applied to the electron-emitting device is adjusted. Is replaced by a drive signal for a phosphor that is actually irradiated with an electron beam. Specifically, in the example of FIG. 25 (3), the correction distance of the electron beam trajectory by voltage correction is limited to dif4,
The drive signal for R is applied to the electron-emitting device set for G.

Therefore, a desirable configuration of a display panel and an electric circuit for performing such a correction method will be described.

The display panel of this embodiment has basically the structure shown in FIG. The face plate used for the display panel of this embodiment may be the one shown in FIG. 1 (2), but more preferably the face plate shown in FIG. 26 (2) is used.

FIGS. 26A and 26B are schematic plan views showing the setting positions of the electron-emitting devices and the striped phosphors of the display panel of this embodiment. FIG. 26A shows an electron-emitting device formed on the substrate 1. 2 shows an arrangement, and (2) shows an arrangement of the striped phosphors 11 and 11 ′ formed on the face plate 7. Alignment mark AE, distance LE, alignment mark AP, distance LP, distance EBy, distance PH
y, the arrangement pitch PX, and the arrangement pitch PY were designed according to the same guidelines as those in FIG. The face plate of FIG. 26 (2) is different from the face plate of FIG. 1 (2) in that a spare phosphor 11 'is provided. That is, in addition to the stripe-shaped phosphors 11 provided corresponding to the arrangement of the electron-emitting devices on the substrate in (1), spare phosphors 11 'indicated by oblique lines in the drawing are provided on both sides of the substrate. The reason for this is that in this embodiment, when the phosphor is shifted by one pitch or more in the X direction with respect to the electron-emitting device as described above, the correction of the irradiation position of the electron beam is kept within one pitch. This is because by providing the phosphor 11 ′, it is possible to prevent the image end from being chipped. In FIG. 26, the spare phosphors 11 'are provided one by one on the left and right, however, when a large displacement is expected,
A larger number may be provided. Spare phosphor 11 '
For the color of the phosphor 11 (R,
G, B).

Next, the electric circuit of the image display device of this embodiment will be described with reference to FIG.

FIG. 27 is a block diagram showing a basic configuration of an electric circuit. In the figure, 71 is a display panel, 72 is a scanning signal generator, 73 is a modulation signal voltage converter, 74 is a pulse width modulator, and 75 is a pulse width modulator. Is a serial / parallel converter, 76 is a timing control circuit, 77 is an arithmetic unit, 79 is a decoder, 80
Denotes a constant voltage source, 81 denotes a constant voltage source, 86 denotes a constant voltage source, and 87 denotes a control voltage source. The functions of these circuits are the same as those of the circuit of the second embodiment described with reference to FIG. Also, 88 is 3
A memory 89 storing one correction value table and 89 is a data array converter that operates based on the control signal Cor5.

In the circuit of FIG. 27, the irradiation position of the electron beam is corrected by correcting the voltage Va applied to the phosphor. That is, the correction value table 6 of the memory 88 stores the correction value of the voltage Va applied to the phosphor, and the control voltage source 87 connected to the terminal Hv of the display panel 71 is read from the correction value table 6. A voltage is output based on the corrected value Cor6. The correction value Cor6 is a value for correcting the irradiation position of the electron beam within one pitch. Specifically, the reference value of the output voltage of the control voltage source 87 was set to 5 [kV], and the output voltage was corrected according to the correction value Cor6. The output voltages of the constant voltage sources 80 and 81 were set to Vns = 7.2 [V], and the output voltage of the constant voltage source 86 was set to Vf = 14.2 [V].

Further, in the correction value table 7 of the memory 88, similarly to the correction value table 4 of FIG. 24, a correction coefficient for correcting the image data Data is stored.

In the correction value table 5 of the memory 88, array correction information for correcting the array performed by the data array converter 89 is stored.

When the displacement of the electron-emitting device and the phosphor in the X direction is within one pitch, the data array converter 89
According to the initially set color arrangement order, R,
G and B are arranged, but if the positional deviation exceeds one pitch, the arrangement order is changed.

With the above circuit configuration, the correction of the electron beam trajectory by the correction of the voltage Va applied to the phosphor is limited to a distance within one pitch of the phosphor array, and the driving signal applied to the electron-emitting device is actually changed to the electron. It has become possible to replace the drive signal for the phosphor for irradiating the beam.

In the circuit of FIG. 27, the fluorescent substance applied voltage V
Although the trajectory of the electron beam was corrected by correcting a, referring to FIG. 18, it is possible to easily realize a circuit that corrects the trajectory of the electron beam by correcting the voltage Vf applied to the electron-emitting device. It is possible.

The image display device of this embodiment has been described. As is clear from the description, it was possible to provide a good display image regardless of whether the electron-emitting device and the phosphor were misaligned. In particular, in the case of the present embodiment, it was possible to provide a good image even when the displacement between the phosphor and the electron-emitting device was a large distance exceeding one pitch.

[0259]

As described above, according to the present invention,
Even if the electron-emitting device and the phosphor are displaced from the set position when assembling the display panel, the edge of the displayed image is not chipped, and the luminance is insufficient and the image is not uniform in the screen. Nor. Also, the colors do not shift or mix.

That is, it is possible to prevent the image quality from deteriorating due to the displacement.

According to the present invention, effects such as prevention of image quality deterioration, reduction of characteristic variation for each display device, improvement of manufacturing yield, and the like were obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing setting positions of electron-emitting devices and phosphors in display panels of Reference Examples 1 and 2.

FIG. 2 is a perspective view of the image display device according to the embodiment of the present invention, in which a part of a display panel is cut away.

FIG. 3 is a plan view illustrating a phosphor array of a face plate of the display panel.

FIG. 4 is a sectional view (1) and a plan view (2) showing an electron beam trajectory of the electron-emitting device used in the present invention.

FIG. 5 is a schematic diagram showing a direction in which an electron-emitting device is formed.

FIG. 6 is a sectional view (1) and a plan view (2) for defining the direction of the surface conduction electron-emitting device.

FIG. 7 is a perspective view showing a typical horizontal field emission device.

FIG. 8 is a sectional view (1) and a plan view (2) for defining the direction of a horizontal field emission device.

FIG. 9A is a plan view of a planar type surface conduction electron-emitting device,
Sectional view (b).

FIG. 10 is a cross-sectional view showing a manufacturing process of the planar surface conduction electron-emitting device.

FIG. 11 is a diagram showing an applied voltage waveform during energization forming processing.

FIG. 12 shows an applied voltage waveform (a) during energization activation processing;
Change in emission current Ie (b).

FIG. 13 is a sectional view of a vertical surface conduction electron-emitting device.

FIG. 14 is a sectional view showing a manufacturing process of the vertical surface conduction electron-emitting device.

FIG. 15 is a graph showing typical characteristics of a surface conduction electron-emitting device.

FIG. 16 is a plan view of a substrate of the multi-electron beam source used in the embodiment.

FIG. 17 is a partial cross-sectional view of the substrate of the multi-electron beam source used in the example.

FIG. 18 is a block diagram of an electric circuit of Reference Example 1.

FIG. 19 is a flowchart illustrating a procedure for storing a correction value in a memory.

FIG. 20 is a plan view showing an irradiation position of an electron beam when the electron-emitting device and the phosphor are assembled without displacement.

FIG. 21 is a plan view showing an irradiation position of an electron beam in a case where the phosphor is assembled in a Y direction with respect to the electron-emitting device.

FIG. 22 is a plan view showing an irradiation position of an electron beam in a case where a phosphor is assembled with being shifted in an X direction with respect to an electron-emitting device.

FIG. 23 is a plan view showing an electron beam irradiation position when the phosphor is assembled with the angle of the phosphor shifted from the electron-emitting device.

FIG. 24 is a block diagram of an electric circuit of Reference Example 2.

FIG. 25 is a sectional view for explaining the correction method of the embodiment.

FIG. 26 is a schematic plan view for explaining setting positions of electron-emitting devices and phosphors in the display panel of the example.

FIG. 27 is a block diagram of an electric circuit according to an embodiment.

FIG. 28 is a diagram illustrating an electron-emitting device and a wiring method tried by the inventors.

FIG. 29 is a cross-sectional view illustrating a technical problem of the present invention in the display panel of the image display device.

FIG. 30 is a diagram showing an example of a conventionally known surface conduction electron-emitting device.

FIG. 31 is a diagram showing an example of a conventionally known FE element.

FIG. 32 is a view showing an example of a conventionally known MIM type element.

[Explanation of symbols]

1, 20, 40, 50, 101, 201, 301, 31
0, 320 Substrate 2, 401, 411 Electron-emitting device 3, 402 Row direction wiring 4, 403 Column direction wiring 5, 410 Rear plate 6, 412 Side wall 7, 413 Face plate 8, 414 Fluorescent film 9 Metal back 10 Black conductor DESCRIPTION OF SYMBOLS 11 Stripe-shaped fluorescent substance 21, 41, 51, 102, 202 Positive electrode 22, 42, 52, 103, 203 Negative electrode 23, 43, 53, 105, 205, 305 Electron emission part 24 Target (phosphor) 25 Electron beam irradiation position 104, 204, 304 Conductive film 112, 115 Power supply 113, 213 Deposit 114 Anode electrode 116 Ammeter 206 Step forming member 311 Emitter wiring 312 Emitter cone 313, 322 Insulating layer 314 Gate electrode 321 Lower electrode 323 Upper electrode

──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Naoto Nakamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-1-100843 (JP, A) (58) Field surveyed (Int.Cl. ⁷ , DB name) H01J 31/12

Claims (4)

(57) [Claims] An electron beam source having a plurality of electron-emitting devices arranged in a matrix on a substrate; a driving unit for applying a driving signal corresponding to an image signal to the plurality of electron-emitting devices; An image forming member on which an image is formed by irradiation of an electron beam emitted from the element; and a means for applying a voltage to the image forming member, wherein the image forming member is a stripe-shaped member; The device has a negative electrode, an electron-emitting portion, and a direction perpendicular to the direction in which the stripe extends.
An image forming apparatus in which a positive electrode is an element arranged side by side on the substrate surface, wherein a drive signal is supplied to the electron emitting element according to a deviation from a set value of a relative position between the electron emitting element and the image forming member. An image forming apparatus, comprising: means for correcting a color data array of an image signal supplied to a driving means for applying an image signal. 2. The image forming apparatus according to claim 1, wherein the electron-emitting device is a horizontal field emission device. 3. The image forming apparatus according to claim 1, wherein the electron-emitting device is a surface-conduction emission device. 4. The image forming apparatus according to claim 1, wherein the image forming member is a stripe-shaped phosphor.