JP2000250464A - Image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an electron emitting element from malfunctioning owing to a ringing signal by making the resonance frequency of the ringing signal higher than the maximum value of the frequency that a driving signal has. SOLUTION: Let f0>fmax where f0 is the resonance frequency that a driving circuit including an electron source has and fmax is the maximum frequency that the driving signal has when an image is displayed. Further, the resonance frequency f0 is calculated from the calculation equation consisting of the inductive components Lro and Lco between lead-out parts for row and column wires and the connection part of the driving circuit, an inductive component Lmo between electron discharging elements in a simple matrix, and a capacitive component (Cmo) formed of the wire at an intersection of row and column wires and an inter-layer insulating layer. Further, the inductive components Lro and Lco between the lead-out parts for the row and column wires and the connection part of the driving circuit are <=200 nH and the distance between the lead-out parts and connection part is <=200 mm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image forming apparatus using an electron source having a large number of electron-emitting devices.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a hot cathode device and a cold cathode device, are known. Among them, as the cold cathode device, for example, a field emission type device (hereinafter referred to as FE type), a metal / insulating layer / metal type emission device (hereinafter referred to as MIM type), a surface conduction type emission device, and the like are known. .

[0003] As a surface conduction type emission element, for example,
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, 1290, (196
5) and other examples described later are known.

The surface conduction electron-emitting device utilizes a phenomenon in which an electron is emitted when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. As this surface conduction type emission element, Sn described by Elinson et al.
In addition to those using the O ₂ thin film, those using the Au thin film [G. Dittmer: "Thin Solid Fi
lms ", 9,317 (1972)] and In ₂ O ₃ /
According to SnO ₂ thin film [M. Hartwell an
d C.I. G. FIG. Fonstad: "IEEE Tran
s. ED Conf. , 519 (1975)] and those using carbon thin films [Hisashi Araki et al .: Vacuum, Vol. 26,
No. 1, 22 (1983)].

As a typical example of the element structure of these surface conduction electron-emitting devices, the above-mentioned M.P. FIG. 1 shows a plan view of the device by Hartwell et al. In FIG. 1, 3001
, A substrate; and 3004, a conductive thin film made of metal oxide formed by sputtering. The conductive thin film 3004 is formed in an H-shaped planar shape as shown. An electron emission portion 3005 is formed by performing an energization process called energization forming described later on the conductive thin film 3004. 1 is 0.5 to 1 mm, and W is 0.1 mm.
Is set with Note that, for convenience of illustration, the electron emitting unit 3
005 is shown in a rectangular shape at the center of the conductive thin film 3004, but this is a schematic one, and
The position and shape of 005 are not faithfully represented.

[0006] M. In the above-described surface conduction electron-emitting device, including the device by Hartwell et al., The conductive thin film 3004 is subjected to an energization process called energization forming before the electron emission, so that the electron emission portion 300
Generally, 5 is formed. The energization forming means that a constant DC voltage is applied to both ends of the conductive thin film 3004,
Alternatively, a current is applied by applying a direct current voltage that is boosted at a very slow rate of, for example, about 1 V / min, and locally destroys, deforms, or alters the conductive thin film 3004, and the electrons in an electrically high resistance state That is, forming the emission part 3005. The conductive thin film 30 that has been locally broken, deformed, or altered by the energization forming.
Cracks occur in a part of 04. When an appropriate voltage is applied to the conductive thin film 3004 after the energization forming, electrons are emitted in the vicinity of the crack.

[0007] Examples of the FE type include, for example,
W. P. Dyke & W. W. Dolan, "Field
Emission ", Advance in Ele
ctron Physics, 8, 89 (1956)
Or C.I. A. Spindt, "Physic
alproperties of thin-film
field emissioncathodes wi
th molbdenium cones ", JA
ppl. Phys. , 47, 5248 (1976).

As a typical example of the FE type device configuration, the above-mentioned C.I. A. FIG. 2 is a cross-sectional view of a device by Spindt et al.
Shown in In FIG. 2, reference numeral 3010 denotes a substrate, 3011 denotes an emitter wiring made of a conductive material, 3012 denotes an emitter cone, 3013 denotes an insulating layer, and 3014 denotes a gate electrode. This device comprises an emitter cone 3012 and a gate electrode 3
By applying an appropriate voltage during 014, field emission is caused from the tip of the emitter cone 3012.

As another element structure of the FE type, FIG.
There is also an example in which an emitter electrode and a gate electrode are arranged on a substrate almost in parallel with the substrate surface instead of the laminated structure as described above.

As an example of the MIM type, for example,
C. A. Mead, “Operation of tu
nnel-emission Devices, J. et al. A
ppl. Phys. , 32, 646 (1961).

FIG. 3 shows a typical example of an MIM type element configuration. FIG. 3 is a cross-sectional view. In FIG. 3, reference numeral 3020 denotes a substrate; 3021, a lower electrode made of a metal; 3022, a thin insulating layer having a thickness of about 100 angstroms; and 3023, an upper layer made of a metal having a thickness of about 80 to 300 angstroms. Electrodes. In the MIM type, electrons are emitted from the surface of the upper electrode 3023 by applying an appropriate voltage between the upper electrode 3023 and the lower electrode 3021.

The above-mentioned cold cathode device can obtain electrons at a lower temperature than the hot cathode device, and therefore does not require a heater for heating. Therefore, the structure is simpler than that of the hot cathode element, and a fine element can be produced. Also,
Even if a large number of elements are arranged on a substrate at a high density, problems such as thermal melting of the substrate hardly occur. In addition, unlike the hot cathode device, which operates by heating the heater, the response speed is slow, and the cold cathode device also has the advantage that the response speed is fast. For this reason, research for applying the cold cathode device has been actively conducted.

For example, the surface conduction electron-emitting device has the advantage of being able to form a large number of devices over a large area since it has a particularly simple structure and is easy to manufacture among cold cathodes. Therefore, for example, Japanese Patent Application Laid-Open No.
As disclosed in Japanese Patent Publication No. 332, a method for arranging and driving a large number of elements has been studied. As for the application of the surface conduction electron-emitting device, studies have been made on using it as an image forming apparatus such as an image forming apparatus and an image recording apparatus, and a charged beam source.

Particularly, as an application to an image display device, US Pat. No. 5,066,883 by the present applicant,
As disclosed in JP-A-257551 and JP-A-4-28137, an image display device using a combination of a surface conduction electron-emitting device and a phosphor which emits light by irradiation with an electron beam has been studied. An image display device using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image display devices. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle.

A method of driving a large number of FE types is disclosed in US Pat. No. 4,904,89 by the present applicant.
No. 5. Further, as an example in which the FE type is applied to an image display device, for example, R.F. The flat panel display reported by Meyer et al. Is known [R. Mey
er: “Recent Development on
Microtips Display at LET
I ", Tech. Digest of 4th In
t. Vacuum Microelectronic
s Conf. , Nagahama, pp. 6-9 (1
991)].

An example in which a number of MIM types are arranged and applied to an image display device is disclosed in, for example, Japanese Patent Application Laid-Open No.
No. 5738.

In particular, among the image display devices using the above-described electron-emitting devices, a flat display device having a small depth is noticed as a replacement for a cathode ray tube display device because it is space-saving and lightweight. ing.

[0018]

When a large number of electron-emitting devices are arranged and driven, a large number of two-dimensionally arranged electron-emitting devices are arranged in rows and columns in a matrix (simple wiring). It is effective to use an electron source with matrix wiring.

However, when a multi-electron beam source in which electron-emitting devices are arranged in a simple matrix is driven in a row-selective manner, a resonance phenomenon occurs due to a capacitance component and an inductive component in a connection portion between the matrix wiring and the driving circuit, and a driving signal is generated. The ringing waveform is superimposed on the image, and the driving condition of the electron-emitting device becomes unstable, and in some cases, an excessive signal is applied. In particular, since the electron-emitting devices classified as cold cathodes exhibit an extremely fast response, the electron-emitting operation is performed in response to the ringing signal, and the fluctuation of the electron-emission amount or, in some cases, the excessive signal amplitude causes the electron-emission amount. May be reduced.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an image forming apparatus using an electron source in which a plurality of electron-emitting devices are arranged in a matrix with a plurality of rows and columns in a row is provided. An object of the present invention is to prevent a malfunction of an electron-emitting device due to a ringing signal.

[0021]

Means for Solving the Problems Applicants have conducted intensive studies to improve the characteristics of an image forming apparatus using an electron-emitting device.
The drive signal to the electron-emitting device is applied stably by minimizing the connection wiring length with the driving circuit for driving the electron-emitting device connected thereto, thereby forming a higher quality image. I found out what can be done.

More specifically, the cause of the malfunction due to the ringing signal is that a capacitance component formed by the inter-wiring insulating layer and the wiring at the wiring intersection of the simple matrix wiring (the intersection of the row direction wiring and the column direction wiring). In addition, a ringing signal having a resonance frequency due to these two components, an inductive component due to the wiring of the simple matrix, the wiring extraction portion of the simple matrix wiring, and the connection portion with the driving circuit, is generated by the application of the driving signal, and is generated in the electron-emitting device. A drive signal having an excessive amplitude is instantaneously applied. Since the electron-emitting devices classified as the cold cathodes described above exhibit an extremely fast response,
The electron emission operation is performed in response to the ringing signal described above, and there is a possibility that the electron emission amount is reduced due to the fluctuation of the electron emission amount or, in some cases, the excessive signal amplitude.

Therefore, in the present invention, the resonance frequency of the ringing signal is designed to be higher than the maximum value of the frequency included in the drive signal, so that the ringing signal is not superimposed on the drive signal. It was made.

More specifically, the resonance frequency of the ringing is further increased by minimizing the connection wiring length between the simple matrix wiring and the circuit for driving the electron-emitting device connected thereto. Is solved by

That is, a first aspect of the present invention is that an electron source in which a plurality of electron-emitting devices are arranged in a matrix in a plurality of row and column direction wirings, and which is arranged to face the electron source and emits light upon incidence of electrons. In an image forming apparatus having at least a light emitting member to be driven and a driving circuit for driving the electron-emitting device by an image signal, the resonance frequency fo of the driving circuit including the electron source and the driving signal for displaying an image have An object of the present invention is to provide an image forming apparatus characterized in that fo> fmax is satisfied between the maximum frequency component fmax.

According to a second aspect of the present invention, in the above-described image forming apparatus, the resonance frequency fo is determined by determining an inductive component L between a row and column wiring lead-out portion and a driving circuit connection portion.
calculated from ro and Lco, an induction component Lmo between the electron-emitting devices on the simple matrix, and a capacitance component (Cmo) formed by the wiring at the intersection of the row wiring and the column wiring and the interlayer insulating layer,

[0027]

(Equation 2) Third, the inductive components Lro and Lco between the connection part of the drive circuit and the lead-out part of the row and column wiring in the second are 200 nH or less. 2, the distance between the connection part of the driving circuit and the extraction part of the row and column wiring is 200 mm or less. Fifth, in any one of the first to fourth aspects, the driving circuit It is preferably installed on one side or both sides of the take-out part, and is preferably installed on the back surface of the electron source substrate.

According to the structure of the present invention, there is provided an image forming apparatus which can stably drive an electron source of an image forming apparatus using a plurality of electron-emitting devices and can display a high-quality image. Becomes possible.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described by taking a case where a surface conduction electron-emitting device is used as an electron-emitting device as an example.

FIG. 4 is a perspective view showing a display panel portion in a flat-panel type image display device according to an example of the present invention, in which a part of the panel is cut away to show the internal structure.

In the figure, 1005 is a rear plate, 1006
Denotes a side wall, 1007 denotes a face plate (display substrate), and 1005 to 1007 form an airtight container for maintaining the inside of the display panel at a vacuum. When assembling the airtight container, it is necessary to seal the joints of the members in order to maintain sufficient strength and airtightness. For example, frit glass is applied to the joints, and 400 g is applied in the air or in a nitrogen atmosphere. Sealing can be performed by baking for 10 minutes or more at ~ 500 ° C. A method of evacuating the inside of the airtight container to a vacuum will be described later.

An electron source substrate 1001 is fixed to the rear plate 1005.
N × M surface conduction electron-emitting devices 1002 are formed thereon (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels. For example, high quality In a display device for displaying television,
It is desirable to set a number of N = 3000 and M = 1000 or more. In the embodiment described later, N = 3072, M
= 1024. ). The N × M surface conduction electron-emitting devices are arranged in a simple matrix by M row-directional wirings 1003 and N column-directional wirings 1004 electrically divided into two sections. Surface conduction type emission device 1002,
The portion constituted by the row direction wirings 1003 and the column direction wirings 1004 is called a multi-electron source or an electron source, and a multi-electron source substrate or an electron source substrate including the electron source substrate 1001.

In this embodiment, the multi-electron source substrate 1001 is fixed to the rear plate 1005 of the airtight container. However, if the electron source substrate 1001 has a sufficient strength, Alternatively, the electron source substrate 1001 itself may be used as the rear plate of the airtight container.

On the lower surface of the face plate 1007, a fluorescent film 1008 is formed as a light emitting member. Since this example is a color display device, phosphors of three primary colors of red, green, and blue used in the field of CRT are separately applied to a portion of the fluorescent film 1008. The phosphor of each color is separately applied in a stripe shape as shown in FIG. 5A, for example, and a black conductive material 1010 is provided between the stripes of the phosphor. The purpose of providing the black conductive material 1010 is to prevent the display color from being shifted even when the irradiation position of the electron beam is slightly shifted, and to prevent reflection of external light to prevent a decrease in display contrast. And preventing charge-up of the fluorescent film by an electron beam. Although graphite is used as a main component for the black conductive material 1010, any other material may be used as long as it is suitable for the above purpose.

FIG. 5 (A) shows how to paint the three primary color phosphors.
It is not limited to the striped arrangement shown in
For example, a delta arrangement as shown in FIG. 5B or another arrangement may be used. When a monochrome display panel is formed, a monochromatic phosphor is coated on the phosphor film 10.
08, and the black conductive material 1010 may not necessarily be used.

On the surface of the fluorescent film 1008 on the rear plate 1005 side, a metal back 100 known in the field of CRT is provided.
9 are provided. The purpose of providing the metal back 1009 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 1008, to protect the fluorescent film 1008 from the collision of negative ions, and to increase the electron beam acceleration voltage. To act as an electrode for applying
8 as a conductive path for the excited electrons. After forming the fluorescent film 1008 on the face plate 1007, the metal back 1009 is
Can be formed by performing a smoothing treatment on the surface of the substrate and then vacuum-depositing aluminum thereon. In addition,
When a phosphor for low voltage is used for the fluorescent film 1008,
The metal back 1009 is not normally used.

Although not used in this example, a transparent electrode made of, for example, ITO is provided between the face plate 1007 and the fluorescent film 1008 for the purpose of applying an acceleration voltage and improving the conductivity of the fluorescent film 1008. You may.

Dx1 to Dxm and Dy1 to Dyn and Hv
Is a terminal for electric connection of an airtight structure provided for electrically connecting the display panel to an electric circuit (not shown).
Dx1 to Dxm are the row wiring 1003 of the multi-electron source,
y1 to Dyn and Dz1 to Dzn are the column-directional wirings 1004 of the multi-electron source, and Hv is the metal back 1 of the face plate.
009 respectively.

In order to evacuate the inside of the hermetic container, after assembling the hermetic container, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is evacuated to a degree of vacuum of about 10 ^-7 Torr. After that, the exhaust pipe is sealed, but it is preferable to form a getter film (not shown) at a predetermined position in the airtight container immediately before or after sealing in order to maintain the degree of vacuum in the airtight container. . The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the airtight container is 1 × 10 ⁻⁵ to 1 × by the adsorbing action of the getter film. 10
^-7 Torr vacuum can be maintained.

The basic structure and manufacturing method of the display panel in the image forming apparatus according to an embodiment of the present invention have been described above. The present inventors assume that the electron-emitting devices having various materials, manufacturing methods and structures are multi-electron sources. We have been studying that and the image display device using this multi-electron source.

The present inventors have tried a multi-electron source by the electric wiring method shown in FIG. 6, for example. That is, it is a multi-electron source in which a large number of electron-emitting devices are two-dimensionally arranged, and these devices are arranged in a simple matrix as shown in the figure.

In FIG. 6, 4001 schematically shows an electron-emitting device, 4002 is a row-directional wiring, 4003
Is a column wiring. Since the row direction wiring 4002 and the column direction wiring 4003 actually have a finite electric resistance, the electric resistance
004 and 4005.

Although a 6 × 6 matrix is shown for convenience of illustration, the size of the matrix is not limited to this. For example, in the case of a multi-electron source for an image display device, a desired image display is performed. (E.g., a surface conduction electron-emitting device 40 in FIG. 6).
01) are arranged and wired.

In the multi-electron source in which the electron-emitting devices are wired in a simple matrix, an appropriate electric signal is applied to the row wiring 4002 and the column wiring 4003 in order to output a desired electron beam. For example, to drive one row of electron-emitting devices in the matrix, the selection voltage Vs is applied to the row-directional wiring 4002 of the selected row, and the non-selected row-directional wiring 4002 is simultaneously applied to the row-directional wiring 4002 of the unselected row. Selection voltage V
Apply ns. In synchronization with this, a driving voltage Ve for outputting an electron beam is applied to the column wiring 4003. According to this method, if the voltage drop due to the wiring resistances 4004 and 4005 is ignored, a voltage of Ve−Vs is applied to the electron-emitting devices in the selected row, and Ve−Vs is applied to the electron-emitting devices in the non-selected row. A voltage of Vns is applied. Ve, V
If s and Vns are set to voltages of appropriate magnitudes, an electron beam of a desired intensity should be output only from the electron-emitting devices in the selected row, and a different drive voltage Ve is applied to each of the column wirings. Then, electron beams having different intensities should be output from each of the electron-emitting devices in the selected row.
Further, since the response speed of the electron-emitting device is high, if the length of time for applying the drive voltage Ve is changed, the length of time for outputting the electron beam should be changed.

Therefore, a multi-electron source in which electron-emitting devices are arranged in a simple matrix is considered for various uses. For example, if a voltage signal corresponding to image information is appropriately applied, the multi-electron source can be applied as an electron source for an image display device. It is expected to be possible.

However, when a multi-electron source in which electron-emitting devices are arranged in a simple matrix wiring is driven by row selection as described above, as described above, the capacitance component and the inductive component at the connection between the matrix wiring and the driving circuit are obtained. As a result, a resonance phenomenon occurs, a ringing waveform is superimposed on the drive signal, and the drive conditions of the electron-emitting device become unstable, and in some cases, an excessive signal is added.

FIG. 7 shows an equivalent circuit when the row selection drive is performed. 5001 is a reference potential Vns (ground here),
5002 is a power supply for applying the selection potential Vs, 5003 is a power supply for applying the drive potential Ve, 5004 is a row direction wiring,
005 is a column direction wiring. Reference numeral 5006 denotes an inductive component Lr of an extraction portion of the row wiring 5004 and a connection cable portion to the power supply 5002, and 5007 denotes a column wiring 5005.
Component L at the connection portion with the power supply 5003
c, 5008 is a capacitance component Cm formed by the wiring at the intersection of the row wiring 5004 and the column wiring 5005 and the interlayer insulating layer, 5009 is an electron-emitting device, and 5010 is an inductive component of a wiring connecting between the devices. Lm. Note that the wiring resistances 4004 and 4005 described in FIG. 6 are omitted in FIG. In FIG. 7, the synthesis induction component L is
Lr + (Lm × n) + (Lc / n). Here, n is the total number of column wirings. Also, the combined capacitance component C
Is n × Cm. Therefore, this equivalent circuit is a circuit having a resonance frequency fo represented by the following equation.

[0048]

(Equation 3)

For this reason, as shown in FIG. 8, the application of the drive signal (FIG. 8 (a)) generates a ringing signal having a resonance frequency fo due to the Lc component, which instantaneously causes an excessively large amplitude in the electron-emitting device. (FIG. 8B) is applied. Here, the attenuation characteristic of the ringing waveform is mainly determined by the on-resistance R of the electron-emitting device, and follows the attenuation constant ζ represented by the following equation.

[0050]

(Equation 4)

On the other hand, as described above, the electron-emitting device classified as a cold cathode exhibits an extremely fast response. Therefore, since the electron emission operation is performed in response to the ringing signal, as described above, there is a possibility that the electron emission amount is reduced due to the fluctuation of the electron emission amount or, in some cases, an excessive signal amplitude.

Therefore, in the present invention, fo> f between the resonance frequency fo of the drive circuit including the electron source and the maximum frequency component fmax of the drive signal for displaying an image.
max is established so that the ringing signal does not activate the electron-emitting device.

The resonance frequency fo is determined by the inductive component Lro between the connection portion of the drive circuit and the extraction portion of the row and column wirings.
And Lco, the induction component Lmo between the electron-emitting devices on the simple matrix, and the capacitance component (Cmo) formed by the wiring at the intersection of the row wiring and the column wiring and the interlayer insulating layer,

[0054]

(Equation 5) And the relationship of fo> fmax can be confirmed based on this.

In order to easily satisfy the relationship of fo> fmax, it is preferable that the inductive components Lro and Lco between the row and column wiring lead-out portion and the connection portion of the drive circuit be 200 nH or less. In addition, it is preferable that the distance between the column wiring take-out part and the drive circuit connection part be 200 mm or less. In order to shorten the distance between the row and column wiring take-out section and the drive circuit connection section, the drive circuit is installed on the back surface of the electron source substrate, and one side of the row direction wiring take-out section or Preferably, it is connected on both sides.

[0056]

(Embodiment 1) FIG. 9 is a perspective view showing a part of a display panel in an image display device of the present embodiment. FIG.
In the figure, 1 is a substrate of a multi-electron source, 2 is a face plate (display substrate) provided with a phosphor that emits light by irradiating an electron beam, 3 is a cable connecting a wiring end of the electron source substrate 1 and a driving power source, Is a drive power supply.

In this embodiment, the length of the flat cable on the side of the row arrangement direction line 1003 shown in FIG.
The flat cable length on the side was about 100 mm and about 50 mm, respectively. In addition, each induction component is about 10
0 nH and about 50 nH.

The capacitance component of the multi-beam electron source at the intersection of the wires was measured by an LCR meter. As a result, when the intersection was 0.04 pF and n = 3072, 15
It was 4 pF (= C).

The row direction wiring 5004 described with reference to FIG.
The inductive component Lr of the take-out part and the connection cable part to the power supply 5002 is about 30 nH at the take-out electrode part of about 30 mm, and about 30 nH at the flat cable (about 100 mm) connecting the drive power supply and the take-out electrode part. 100
nH. Lr is estimated to be 130 nH.

The induction component (the induction component Lm × n of the wiring connecting the elements) in the matrix portion is about 280 nH.

The inductive component Lc of the extraction portion of the column direction wiring 5005 and the connection portion with the power supply 5003 is approximately 30 nH at the extraction electrode portion of about 30 mm, and a flat cable (about 50 mm) connecting the driving power supply and the extraction electrode portion. )
At about 50 nH. Lc / n is 0.0
It is estimated to be 8 nH.

Therefore, L = 130 + 280 + 0.08 =
410.08 nH, C = 154 pF, and the panel characteristic frequency was determined to be 22 MHz.

On the other hand, when the rise times of Vs and Ve in FIG. 7 were examined, they were about 60 nsec and 80 nsec, respectively, and the highest frequency component was about 17 Msec.
Hz. Therefore, the resonance frequency can be made higher than the highest frequency of the drive signal, and the occurrence of ringing can be sufficiently reduced.

The above description corresponds to the case where many electron-emitting devices are in the electron-emitting operation state in the case where row selection driving is performed.

On the other hand, when a specific image is displayed, that is, when only a small number of elements in the selected row are in an electron emission state, n in the equation of L is a substantially small number. In some cases, the component of Lc cannot be ignored. The maximum component of Lc / n is 80 nH (induction component for one column wiring), and the resonance frequency is determined to be 18.3 MHz.

Also in this case, the resonance frequency can be made higher than the highest frequency of the drive signal, and the occurrence of ringing can be sufficiently reduced.

In this embodiment, a flat cable is used as the connection line between the row / column wiring end and the drive power supply. However, the present invention is not limited to this, and a tab or a flexible cable may be used.

(Embodiment 2) This embodiment shows an example in which a multi-electron source in which a matrix wiring portion is divided into two groups is used.

As shown in FIG. 10, the N × M surface conduction electron-emitting devices 1002 are divided into two groups, and each group is divided into M / 2 row direction wirings 1003 and n column direction wirings 103.
04 is a simple matrix wiring.

In this embodiment, the flat cable length on the row direction wiring 1003 side and the flat cable length on the column direction wiring 1004 side are about 100 mm and about 50 mm, respectively. In addition, each of the inducing components was about 100 nH, about 5 nH.
0 nH.

In this case, the length of the flat cable on the side of the row direction wiring 1003 and the length of the flat cable on the side of the column direction wiring 1004 were measured using an LCR meter to measure the capacitance component at the intersection of the multi-electron sources. .04 pF and n = 3072, 154 pF (=
C).

The row direction wiring 5004 described with reference to FIG.
The inductive component Lr of the take-out part and the connection cable part to the power supply 5002 is about 30 nH at the take-out electrode part of about 30 mm, and about 30 nH at the flat cable (about 100 mm) connecting the drive power supply and the take-out electrode part. 100
nH. Lr is estimated to be 130 nH.

The induction component (the induction component Lm × n of the wiring connecting the elements) in the matrix portion is about 280 nH.

The induction component Lc of the extraction portion of the column wiring 5005 and the connection portion to the power supply 5003 is approximately 30 nH at the extraction electrode portion of about 30 mm, and a flat cable (about 50 mm) connecting the driving power supply and the extraction electrode portion. )
At about 50 nH. Lc / n is 0.0
It is estimated to be 8 nH.

Therefore, L = 130 + 280 + 0.08 =
It was 410.08 nH, C = 154 pF, and the panel characteristic frequency was determined to be 22 MHz.

On the other hand, when the rise times of Vs and Ve in FIG. 7 were examined, they were about 60 nsec and 80 nsec, respectively, and the maximum frequency component was about 17 Msec.
Hz. Therefore, the resonance frequency can be made higher than the highest frequency of the drive signal, and the occurrence of ringing can be sufficiently reduced.

The above corresponds to the case where many electron-emitting devices are in the electron-emitting operation state in the case where the row selection drive is performed.

On the other hand, when a specific image is displayed, that is, when only a small number of elements in the selected row are in the electron emission state, n in the equation of L is substantially a small number. May not be ignored. The maximum component of Lc / n is 80 nH (induction component for one column wiring), and in this case, the resonance frequency is 18.3 MHz.
Is required.

Also in this case, the resonance frequency can be made higher than the highest frequency of the drive signal, and the occurrence of ringing can be sufficiently reduced.

In this embodiment, a flat cable is used as the connection line between the end of the row / column wiring and the drive power supply. However, the present invention is not limited to this, and a tab or a flexible cable may be used.

As described above, the present method is also effective when the matrix is divided as described above.

[0082]

As described above, according to the present invention, it is possible to more stably drive an electron source of an image forming apparatus using a plurality of electron-emitting devices, and it is possible to perform an image displaying a high-quality image. It is possible to provide a forming apparatus.

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing a surface conduction electron-emitting device which is an example of a conventionally known cold cathode device.

FIG. 2 is a cross-sectional view schematically showing a field emission device (FE type) which is another example of a conventionally known cold cathode device.

FIG. 3 is a cross-sectional view schematically showing a metal / insulating layer / metal-type emission device (MIM type) which is still another example of a conventionally known cold cathode device.

FIG. 4 is a partially cutaway perspective view showing a display panel unit in a flat panel display according to an example of the present invention.

FIG. 5 is an explanatory diagram of a state in which phosphors are separately applied.

FIG. 6 is a diagram showing a wiring example for driving a large number of electron-emitting devices.

FIG. 7 is a diagram illustrating an equivalent circuit when row selection driving is performed.

FIG. 8 is a diagram showing a drive signal in which a normal drive signal and a ringing signal are superimposed.

FIG. 9 is a perspective view showing a part of the display panel in the flat panel display according to the first embodiment.

FIG. 10 is a partially cutaway perspective view showing a display panel unit in a flat panel display according to a second embodiment.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 substrate for electron source 2 face plate (display substrate) 3 cable 4 drive power supply 1001 substrate for electron source 1002 surface conduction electron-emitting device 1003 row direction wiring 1004 column direction wiring 1005 rear plate 1006 side wall 1007 face plate (display substrate) 1008 fluorescent film 1009 metal back 1010 black conductive material 4001 electron emitting element 4002 row direction wiring 4003 column direction wiring 4004 wiring resistance 4005 wiring resistance 5001 reference potential Vns 5002 power supply for applying selection potential Vs 5003 power supply for supplying driving potential Ve 5004 row wiring 5005 Column-direction wiring 5006 Inductive component Lr of the cable section connected to the lead-out part of the row-direction wiring and the power supply providing the selection potential Vs 5007 The lead-out part of the column-direction wiring and the connection part to the power supply providing the drive potential Ve Inductive component Lc 5008 Capacitance component Cm 5009 formed by the wiring at the intersection of the row wiring and the column wiring and the interlayer insulating layer Electron emitting element 5010 Inductive component L of the wiring connecting between the electron emitting elements
m

Claims (5)

[Claims] 1. An electron source in which a plurality of electron-emitting devices are arranged in a matrix with a plurality of row and column wirings, a light emitting member arranged to face the electron source, and emitting light upon incidence of electrons; And a driving circuit for driving the electron-emitting device, the resonance frequency fo of the driving circuit including the electron source, and the maximum frequency component f of the driving signal for displaying an image.
fo> fmax is established between the image forming apparatus and the image forming apparatus. 2. The image forming apparatus according to claim 1, wherein the resonance frequency fo is calculated by calculating inductive components Lro and Lco between a row and column wiring lead-out portion and a connection portion of a drive circuit, and a simple matrix. Induction component Lmo between the electron-emitting devices
And a capacitance component (Cmo) formed by the wiring at the intersection of the row wiring and the column wiring and the interlayer insulating layer. An image forming apparatus characterized by the following. 3. The image forming apparatus according to claim 2, wherein inductive components Lro and Lco between a row and column wiring take-out portion and a connection portion of the drive circuit are 200 nH or less. Image forming device. 4. The image forming apparatus according to claim 2, wherein a distance between a row and column wiring take-out portion and a connection portion of the drive circuit is 200 mm or less. 5. The image forming apparatus according to claim 1, wherein the drive circuit is provided on one side or both sides of a take-out portion of the row direction wiring, and a back surface of the electron source substrate. An image forming apparatus, wherein the image forming apparatus is installed in an image forming apparatus.