JP2002368428A - Board unit for high-frequency module, high-frequency module unit and their manufacturing methods - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce in size and cost of a package by thinning the package with a high accuracy and a high function. SOLUTION: A board unit for a high-frequency module comprises a base board 2 formed by flattening an uppermost layer by multilayer wiring on an organic base board 5 to a build-up forming surface 3, and a high-frequency circuit 4 formed with multilayer wiring layers 32 and 34 having passive elements via insulating layers 31 and 33 according to a thin film technique and a thick film technique on the build-up forming surface 3. An inductor element 37 for a high frequency is formed in an inner layer side wiring layer 31 of the circuit 4, and an inductor element 338 for a low frequency is formed in the front layer side wiring layer 34 formed thicker than the inner layer side wiring layer 31.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention is suitable for use in, for example, personal computers, audio equipment or various electronic devices such as various mobile devices and mobile phones.
The present invention relates to a high-frequency module substrate device having an information communication function, a storage function and the like to constitute a microminiature communication function module, a method for manufacturing the same, a high-frequency module device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, various types of information such as music, voice, images, etc., can be easily handled by a personal computer, a mobile computer, and the like with the digitization of data. In addition, such information is band-compressed by an audio codec technology or an image codec technology, and an environment for easily and efficiently distributing to various communication terminal devices by digital communication or digital broadcasting is being prepared. . For example, audio / video data (AV data) can be received indoors and outdoors via a mobile phone.

[0003] By the way, a data transmission / reception system includes:
Proposal of a suitable network system even in a small area such as a home has been utilized in various ways. As the network system, for example, a short-range wireless communication system in a 5 GHz band as proposed in IEEE 802.1a, a wireless LAN system in a 2.45 band as proposed in IEEE 802.1b, or a short-term called Bluetooh. Various next-generation wireless systems, such as a distance wireless communication system, have received attention. The data transmission / reception system makes effective use of such a wireless network system to easily transmit and receive various data at various places such as at home or outdoors without using a relay device, and to access the Internet network. Data can be transmitted and received.

On the other hand, in a data transmission / reception system, it is essential to realize a communication terminal device which is small, lightweight, portable and has the above-described communication function. In a communication terminal device, since it is necessary to perform a modulation / demodulation process of an analog high-frequency signal in a transmission / reception unit, generally, FIG.
The wireless communication transmission / reception circuit 100 according to the super heterodyne system for temporarily converting a transmission / reception signal as shown in FIG.

[0005] The wireless communication transmitting / receiving circuit 100 includes an antenna unit 101 having an antenna and a changeover switch for receiving or transmitting an information signal, and a transmission / reception switch 102 for switching between transmission and reception. Wireless communication transmitting / receiving circuit 10
In 0, a reception circuit unit 105 including a frequency conversion circuit unit 103, a demodulation circuit unit 104, and the like is provided. The wireless communication transmission / reception circuit 100 includes a transmission circuit unit 1 including a power amplifier 106, a drive amplifier 107, a modulation circuit unit 108, and the like.
09 is provided. The wireless communication transmission / reception circuit 100 includes a reference frequency generation circuit unit 100a that supplies a reference frequency to the reception circuit unit 105 and the transmission circuit unit 109.

[0006] In the wireless communication transmitting / receiving circuit 100, although not described in detail, various filters and local oscillators (VCOs) inserted between the respective stages are provided.
llator), SAW filter (saw tooth waveform filter)
r), and the number of passive components such as inductors, resistors, and capacitors specific to high-frequency analog circuits such as a matching circuit or a bias circuit are extremely large. In the wireless communication transmitting and receiving circuit 100, each circuit section is integrated into an IC, but it is difficult to incorporate a filter inserted between each stage into the IC, and therefore, an external matching circuit is also required. Become. Therefore, the wireless communication transmission / reception circuit 100 becomes large in size as a whole, which has been a major obstacle to reducing the size and weight of the communication terminal device.

On the other hand, as shown in FIG. 36, a radio communication transmission / reception circuit 110 of a direct conversion system for transmitting / receiving an information signal without performing conversion to an intermediate frequency is used for the communication terminal equipment. In the wireless communication transmission / reception circuit 110, the information signal received by the antenna unit 111 is supplied to the demodulation circuit unit 113 via the transmission / reception switch 112, and the baseband processing is directly performed. In the wireless communication transmitting / receiving circuit 110, the information signal generated by the source is directly modulated into a predetermined frequency band without being converted to the intermediate frequency in the modulation circuit section 114, and is transmitted to the antenna 115 via the amplifier 115 and the transmission / reception switch 112. It is transmitted from the unit 111.

Since the wireless communication transmitting / receiving circuit 110 transmits and receives information signals by performing direct detection without converting the intermediate frequency, the number of components such as filters is reduced and the overall configuration is simplified. Therefore, a configuration closer to one chip can be expected. However, the wireless communication transmitting / receiving circuit 110 also needs to be compatible with a filter or a matching circuit arranged at a subsequent stage. Further, in the wireless communication transmitting and receiving circuit 110, it is difficult to obtain a sufficient gain because the amplification is performed once in the high frequency stage, and it is necessary to perform the amplification operation also in the baseband section. Therefore, the wireless communication transmitting and receiving circuit 110 requires a DC offset canceling circuit and an extra low-pass filter, and further has a problem that the entire power consumption increases.

[0009]

As described above, the conventional wireless communication transmitting / receiving circuit is sufficient in both the superheterodyne system and the direct conversion system for the required specifications such as reduction in size and weight of communication terminal equipment. The properties could not be satisfied. For this reason, various attempts have been made for a wireless communication transmitting and receiving circuit to be miniaturized with a simple configuration based on, for example, a Si-CMS circuit or the like. That is, one of the attempts is to form a passive element having good characteristics on a Si substrate, to form a filter circuit, a resonator, and the like on an LSI, and to integrate a logic LSI in a baseband portion, so-called, This is a method of manufacturing a one-chip high frequency transmitting / receiving module.

However, in such a Si-substrate high-frequency transceiver module, it is extremely important how to form a passive element having good characteristics, particularly an inductor, on an LSI. For example, in the high-frequency transmitting / receiving module 120 shown in FIG. 37, a large concave portion 124 is formed corresponding to the inductor forming portion 123 of the Si substrate 121 and the SiO ₂ insulating layer 122. High frequency transceiver module 1
Reference numeral 20 denotes a second wiring layer 12 which forms the first wiring layer 125 facing the recess 124 and closes the recess 124.
6 are formed to form the inductor section 127.

As described above, the high-frequency transmitting / receiving module 120 has a structure in which the inductor portion 127 is floated in the air facing the concave portion 124, thereby reducing interference in the circuit and improving characteristics. However, the high-frequency transmitting / receiving module 120 includes the inductor unit 1
There is a problem in that the process of forming 27 is extremely troublesome, and the number of processes is increased, resulting in an increase in cost.

In the high-frequency transmitting / receiving module, as another measure, a part of the wiring pattern is raised from the substrate surface and floated in the air to form the inductor portion. However, such a high-frequency transmission / reception module also has a problem that the step of forming the inductor section is extremely troublesome, and the number of steps increases the cost.

On the other hand, in the one-chip high-frequency transmitting / receiving module, electric interference of the Si substrate interposed between the high-frequency circuit portion of the analog circuit and the baseband circuit portion of the digital circuit poses a serious problem. For this reason, as the high frequency transmitting / receiving module, for example, a Si substrate high frequency transmitting / receiving module 130 shown in FIG. 38 and a glass substrate high frequency transmitting / receiving module 140 shown in FIG. 39 have been proposed.

The high-frequency transmission / reception module 130 is formed by forming a SiO ₂ layer 132 on a Si substrate 131 and then forming a passive element forming layer 133 by lithography. In the high-frequency transmission / reception module 130, passive elements such as an inductor, a resistor, and a capacitor are formed in multiple layers by a thin-film forming technique or a thick-film forming technique together with a wiring pattern inside a passive element forming layer 133, although not described in detail. ing. The high-frequency transmitting / receiving module 130
Terminal portions 135 connected to the wiring pattern in the layer are formed on the passive element forming layer 133 via via holes 134 serving as relay through holes and the like, and these terminal portions 135 are formed by flip-chip mounting or the like such as a high-frequency IC or LSI. The circuit element 136 is directly mounted.

The high-frequency transmitting / receiving module 130 is mounted on, for example, a mother board provided with a baseband circuit section, so that the high-frequency circuit section and the baseband circuit section are separated by the Si substrate 131 and electromagnetic interference between the two is prevented. It becomes possible to suppress. However, in such a high-frequency transmitting / receiving module 130, the conductive Si substrate 131 effectively functions to form each highly accurate passive element in the passive element forming layer 133.
There is a problem that the Si substrate 131 hinders good high-frequency characteristics of each passive element, and the characteristics are deteriorated.

On the other hand, the high-frequency transmitting / receiving module 140
Si substrate 13 of high-frequency transceiver module 130 described above
In order to solve the problem caused by No. 1, a glass substrate 141 is used as a base substrate. The high-frequency transmitting / receiving module 140 also includes a passive element forming layer 142 formed on a glass substrate 141 by lithography. In the high-frequency transmitting / receiving module 140 as well, although not described in detail, passive elements such as an inductor portion, a resistor portion or a capacitor portion are formed in multiple layers inside the passive element forming layer 142 together with a wiring pattern by a thin film forming technique or a thick film forming technique. Have been. The high-frequency transmitting / receiving module 140
Terminal portions 144 connected to the internal wiring patterns via via holes 143 and the like are formed on the passive element forming layer 142, and circuit elements 145 such as high-frequency ICs and LSIs are directly mounted on these terminal portions 144 by a flip-chip mounting method or the like. It is composed.

Since the high-frequency transmitting / receiving module 140 uses the glass substrate 141 having no conductivity, the degree of capacitive coupling between the glass substrate 141 and the passive element forming layer 142 is suppressed, and a good high-frequency It is possible to form a passive element having characteristics. In order to mount the high-frequency transmitting / receiving module 140 on a mother board, for example, a terminal pattern is formed on the surface of the passive element forming layer 142, and the high-frequency transmitting / receiving module 140 is connected to the mother board by a wire bonding method or the like. Therefore, the high-frequency transmission / reception module 140 requires a terminal pattern forming step and a wire bonding step, and is disadvantageous for downsizing.

In the one-chip high-frequency transceiver module, a high-precision passive element forming layer is formed on the base substrate as described above. When a passive element formation layer is formed as a thin film on a base substrate, heat resistance against surface temperature rise during sputtering, retention of depth of focus during lithography, and contact alignment characteristics during masking are required. For this reason, the base substrate is required to have high-precision flatness and to have insulation, heat resistance, chemical resistance, and the like.

The Si substrate 131 and the glass substrate 141 have such characteristics, and enable the formation of low-cost and low-loss passive elements by a separate process from the LSI. In addition, Si
The substrate 131 and the glass substrate 141 can form a passive element with higher precision than a method of forming a pattern by printing used in the conventional ceramic module technology or a wet etching method of forming a wiring pattern on a printed wiring board. It is possible to reduce the element size by 1 /
It is possible to reduce the size to about 100. Furthermore, S
The i-substrate 131 and the glass substrate 141 can also increase the useable frequency band of the passive element to 20 GHz.

However, in such a high-frequency transmitting / receiving module, a pattern of a high-frequency signal system is formed via a wiring layer formed on the Si substrate 131 or the glass substrate 141 as described above, and a supply wiring or a control system of a power supply or a ground portion is formed. Signal wiring is performed. In the high-frequency transmission / reception module, this causes electric interference between the wirings, and causes a problem of an increase in cost due to the formation of the wiring layers in multiple layers.

Further, the above-mentioned high frequency transmitting / receiving modules 130 and 140 are mounted on an interposer substrate 151 to form a package 150 as shown in FIG. The package 150 has the high-frequency transmitting / receiving module 130 mounted on one main surface of the interposer substrate 151 and is entirely sealed with an insulating resin 152.
The package 150 includes a pattern wiring layer 153 and input / output terminals 154 formed on the front and back main surfaces of the interposer substrate 151, respectively.
A large number of electrode portions 155 are formed around the mounting area.

The package 150 includes a high-frequency transmitting / receiving module 130 mounted on an interposer substrate 151 and
5 is electrically connected by a wire 156 by a wire bonding method so as to supply power and transmit / receive a signal. Therefore, in the high-frequency transmission / reception module 130, a wiring pattern for connecting the mounted component together with the terminal portion 135, an electrode 138 to which the wire 156 is connected, and the like are formed on the surface layer on which the high-frequency IC 136, the chip component 137, and the like are mounted. The high-frequency transmitting / receiving module 140 can be packaged in the same manner.

High frequency transmitting / receiving modules 130 and 140
Is mounted on the interposer substrate 151 and packaged as described above, but there is a problem that the thickness and area of the package 150 are increased. Further, the high-frequency transmitting / receiving modules 130 and 140 have a problem that the cost of the package 150 is increased.

The package 150 includes a high-frequency IC mounted on the high-frequency transmitting / receiving
A shield cover that covers the circuit elements such as SI and reduces the influence of electromagnetic wave noise is attached. Package 15
In the case of No. 0, since heat generated from the circuit element is trapped in the shield cover and deteriorates the characteristics, it is necessary to provide a heat radiation structure. In the package 150, since the Si substrate 121 and the glass substrate 131 are used for the high-frequency transmitting / receiving modules 130 and 140, it is difficult to provide a heat radiation structure for dissipating heat from the substrate side, and there is a problem that the size increases. . Further, the package 150 includes the high-frequency transmitting / receiving modules 130, 14
However, the use of the relatively expensive Si substrate 121 or glass substrate 131 increases the cost.

Accordingly, the present invention provides a high-precision passive element and a high-density wiring layer on a base substrate to achieve high-precision, low-profile, small-sized, and low-priced inductors. The present invention has been proposed for the purpose of providing a high-frequency module substrate device, a method of manufacturing the same, and a high-frequency module device and a method of manufacturing the same, which allow the functional characteristics of the elements to be exhibited.

[0026]

According to the present invention, there is provided a high-frequency module substrate device according to the present invention, in which a multilayer wiring layer is formed on a main surface of a base substrate and a flat main surface of an uppermost layer is formed. A wiring pattern is composed of a base substrate portion having a build-up forming surface formed thereon, and a multilayer wiring portion formed by build-up on the build-up forming surface of the base substrate portion. And a high-frequency circuit section on which a passive element is formed. In the high-frequency module substrate device, an inductor element for a high-frequency band is formed and formed in an inner-layer wiring portion of a high-frequency circuit portion, and a low-frequency band is formed in a surface-layer wiring portion that is thicker than the inner-layer wiring portion. Is formed by film formation.

In the substrate device for a high-frequency module according to the present invention, a multi-layer wiring layer is formed on a main surface of a base substrate made of an organic substrate, and the uppermost layer is subjected to a flattening process to form a build-up forming surface. A wiring pattern is formed on each of the wiring portions via a dielectric insulating layer, comprising a base substrate portion formed by forming a multi-layered wiring portion formed on the build-up forming surface of the base substrate portion. And a high-frequency circuit section in which a passive element is formed as a film. In the high-frequency module substrate device, an inductor element for a high-frequency band is formed and formed in an inner-layer wiring portion of a high-frequency circuit portion, and a low-frequency band is formed in a surface-layer wiring portion that is thicker than the inner-layer wiring portion. Is formed by film formation.

According to the high frequency module substrate device of the present invention configured as described above, since the surface layer side wiring portion is formed by laminating the thin inner layer side wiring portion, a high precision high frequency circuit portion can be formed. It can be formed. According to the high frequency module substrate device, a high frequency band inductor element is formed and formed in the inner layer side wiring portion, and a low frequency band inductor element having a sufficient thickness is formed and formed in the surface layer side wiring portion. You.

As the thickness of the layer of the wiring portion to be formed is larger, the loss is reduced and a high Q value (resonance barometer) is output to improve the characteristics of the inductor element. On the other hand, the inductor element has such a characteristic that the propagation loss hardly changes above the skin effect thickness depending on the frequency due to the skin effect. The skin effect thickness of the inductor element decreases as the frequency increases.

Therefore, according to the high frequency module substrate device, the high frequency band inductor element formed in the thin film inner layer side wiring portion and the thick film surface layer side wiring portion having sufficient thickness are formed. The film-formed inductor element for the low frequency band functions as an inductor adapted to the high frequency signal and the low frequency signal, respectively. According to the high-frequency module substrate device, such a configuration achieves miniaturization and thinning, and also achieves high accuracy and high functionality.

According to the high-frequency module substrate device, the use of a relatively inexpensive organic substrate as the base substrate reduces the overall cost. Further, according to the high-frequency module device, by configuring the base substrate portion as a wiring portion of a power supply or a ground portion or a wiring portion of a control system,
Electrical isolation from the high-frequency circuit is achieved. Therefore, according to the high-frequency module device, the occurrence of electrical interference in the high-frequency circuit portion is suppressed, and the characteristics are improved. In addition, a power supply or a ground portion having a sufficient area can be formed on the base substrate portion. Since it is possible, power supply with high regulation is performed.

Further, a method of manufacturing a high-frequency module substrate device according to the present invention, which achieves the above-mentioned object, is a method for manufacturing a high-frequency module substrate device comprising a multi-layer substrate having at least one main surface having a multi-layer wiring layer formed thereon. A base substrate part manufacturing step having a step of forming a flat build-up forming surface by performing a planarization process, and forming a wiring pattern on the build-up forming surface of the base substrate via a dielectric insulating layer and forming a passive element. A high-frequency circuit section manufacturing step of forming a multi-layered wiring section formed by film formation to build up the high-frequency circuit section. In a method of manufacturing a high-frequency module substrate device, in a high-frequency circuit part manufacturing process, an inductor element for a high-frequency band is formed and formed on a dielectric insulating layer in a step of forming an inner-layer wiring portion, and a surface-layer wiring portion is formed. In the step, an inductor element for a low frequency band is formed and formed on the dielectric insulating layer having a thickness greater than that of the inner layer side wiring portion.

According to the method of manufacturing a substrate device for a high-frequency module according to the present invention having the above-described steps, a thin inner wiring portion is formed on the flattened build-up forming surface, and the inner wiring portion is formed. The surface layer side wiring section is formed by lamination based on the above, so that a high-precision high-frequency circuit section can be formed by lamination. According to the method of manufacturing a substrate device for a high-frequency module, an inductor element for a high-frequency band is formed and formed in the inner wiring portion, and an inductor element for a low-frequency band having a sufficient thickness is formed and formed in the surface wiring portion. Therefore, manufacturing of a high-frequency module substrate device that has been reduced in size and thickness and has higher accuracy and higher functionality, in which each inductor element functions as an inductor adapted to a high-frequency signal and a low-frequency signal, respectively. Is possible. According to the method of manufacturing a high-frequency module substrate device, the use of a relatively inexpensive organic substrate as the base substrate can reduce the overall cost. Further, according to the method of manufacturing the high-frequency module device, by configuring the base substrate portion as a wiring portion of a power supply or a ground portion or a wiring portion of a control system, electric interference of a high-frequency circuit portion in which electrical isolation is achieved is achieved. The generation is suppressed to improve the characteristics, and the power supply with sufficient area and the wiring of the ground part can be formed on the base substrate part, so that the power supply with high regulation is performed. A module device can be manufactured.

Further, the high-frequency module device according to the present invention, which achieves the above-mentioned object, comprises a high-frequency module substrate and an input / output terminal portion of a wiring pattern formed on a dielectric insulating layer of a surface wiring portion of the high-frequency module substrate. A mother for mounting the high-frequency module substrate by connecting at least one high-frequency integrated circuit element connected and mounted to the input terminal of a wiring pattern formed on the second main surface of the high-frequency module substrate; And a substrate. In the high-frequency module substrate, a multilayer wiring layer is formed on a main surface of a base substrate made of an organic substrate, and a flattened main surface of the uppermost layer forms a build-up forming surface and faces the build-up forming surface. A base substrate in which a wiring pattern having a power input terminal portion and a signal input terminal portion is formed on a second main surface to be formed, and a multilayer wiring portion formed by build-up on a build-up forming surface of the base substrate portion And a high-frequency circuit section in which a passive element is formed and a wiring pattern is formed on each wiring section via a dielectric insulating layer. In the high-frequency circuit portion, an inductor element for a high-frequency band is formed and formed in a wiring portion on an inner layer side, and an inductor element for a low-frequency band is formed in a wiring portion on a surface layer which is thicker than the wiring portion on the inner layer side. Is formed as a film.

In the high-frequency module device according to the present invention configured as described above, a thin inner layer side wiring portion is formed on the flat build-up forming surface of the base substrate portion, and the inner layer side wiring portion is used as a base. A high-frequency module substrate having a high-precision and thin high-frequency circuit section is provided by laminating the surface layer side wiring section. Further, in the high-frequency module device, a high-frequency band inductor element is formed and formed in the inner layer side wiring portion, and a low-frequency band inductor element having a sufficient thickness is formed and formed in the surface layer side wiring portion. A high-performance and high-performance high-frequency module substrate having a high-frequency circuit section in which an inductor element functions as an inductor adapted to a high-frequency signal and a low-frequency signal, respectively, is provided. Further, in the high-frequency module device, a base substrate portion made of an inexpensive organic substrate is configured as a wiring portion of a power supply or a ground portion having a sufficient area or a wiring portion of a control system, and is formed with high precision with this base substrate portion. There is provided a high-frequency module substrate which is electrically separated from the high-frequency circuit section to suppress the occurrence of electric interference and improve the characteristics.

The high-frequency module device is constructed by directly mounting a high-frequency integrated circuit element on a high-frequency module substrate having the above-described characteristics, and mounting this on a mother substrate. Therefore, the high-frequency module device constitutes a communication module package that achieves high precision, thinness, small size, and low cost, and is suitably used for portable electronic devices and the like.

Furthermore, a method for manufacturing a high-frequency module device according to the present invention, which achieves the above-described object, includes a high-frequency module substrate manufacturing step including a base substrate section manufacturing step and a high-frequency circuit section manufacturing step, and a high-frequency module mounting step. Having. The base substrate part manufacturing step of the high-frequency module substrate manufacturing step is to form a flat build-up by performing a flattening process on a top layer of a multi-layer organic substrate having a multilayer wiring layer formed on at least one main surface. Form a surface. In the high-frequency circuit part manufacturing process of the high-frequency module substrate manufacturing process, a wiring pattern is formed by forming a wiring pattern and a passive element on the build-up forming surface of the base substrate portion via a dielectric insulating layer. The high-frequency circuit section formed as described above is build-up formed. In the high-frequency circuit part manufacturing process, an inductor element for a high-frequency band is formed and formed on the dielectric insulating layer of the inner layer wiring part, and the surface layer side wiring part which is thicker than the dielectric insulating layer of the inner layer wiring part is formed. An inductor element for a low frequency band is formed on the dielectric insulating layer. In the method of manufacturing a high-frequency module device, the high-frequency module mounting step includes connecting terminal portions on the main surface corresponding to input / output terminal portions formed on the second main surface facing the build-up forming surface of the base substrate portion. The high frequency module substrate is mounted by connecting the input / output terminal portion and the connection terminal portion facing each other to the formed mother substrate.

According to the method of manufacturing a high-frequency module device according to the present invention having the above-described steps, a thin inner wiring portion is formed on the flat build-up forming surface of the base substrate portion, and this inner wiring portion is formed. A high-frequency module substrate having a high-precision and thin high-frequency circuit portion is manufactured by laminating a surface-side wiring portion as a base. According to the method of manufacturing a high-frequency module device, a high-frequency band inductor element is formed and formed in the inner layer side wiring portion, and a low-frequency band inductor element having a sufficient thickness is formed and formed in the surface layer side wiring portion. By doing so, a high-performance and high-performance high-frequency module substrate having a high-frequency circuit section in which each inductor element functions as an inductor adapted to a high-frequency signal and a low-frequency signal, respectively, is manufactured. Furthermore, according to the method of manufacturing the high-frequency module device, the base substrate portion made of an inexpensive organic substrate is configured as a power supply or ground portion wiring portion or a control system wiring portion having a sufficient area. A high-frequency module substrate is manufactured, which is electrically separated from a high-precision formed high-frequency circuit portion to suppress occurrence of electric interference and improve characteristics. According to the method of manufacturing the high-frequency module device, the high-frequency integrated circuit element is directly formed and mounted on the high-frequency module substrate having the above-described high characteristics, and the high-frequency integrated circuit element is mounted on the mother substrate. In addition, miniaturization and cost reduction are achieved, and it becomes possible to manufacture a communication module package suitably used for portable electronic devices and the like.

[0039]

Embodiments of the present invention will be described below in detail with reference to the drawings. In a high-frequency module substrate device (hereinafter abbreviated as a module substrate) 1 shown in FIG. 1 as an embodiment, a top-up layer is formed on a high-precision flat surface by a base substrate portion manufacturing process, and a build-up forming surface 3 And a high-frequency circuit unit 4 laminated on the build-up forming surface 3 by a high-frequency circuit unit manufacturing process using the base substrate unit 2 as a base.

The module substrate 1 has a base substrate 2
It constitutes a wiring section of a power supply system and a control system for the high-frequency circuit section 4 formed on the build-up formation surface 3 or a mounting surface for a mother board 93. Module board 1 has
As shown in FIG. 1, the high-frequency IC 90 and the chip component 91 are mounted using the surface 4 a of the high-frequency circuit unit 4 as a mounting surface, and the shield cover 92 is assembled to seal the entire surface. The module substrate 1 is mounted on a mother substrate 93 as a so-called one-chip component, and constitutes a high-frequency module device 94 which is suitably used for a portable device or the like and has a wireless transmission / reception function.

The base substrate portion 2 has a base substrate 5 made of a double-sided substrate shown in FIG. 3 as a core, and a high-frequency circuit portion 4 on which the high-frequency circuit portion 4 is formed by lamination on the first main surface 5a side through respective steps described later. Is formed. The base substrate section 2 includes a first pattern wiring layer 6 and a second pattern wiring layer 7 constituting a power supply circuit section, a ground section, and the like on the first main surface 5a and the second main surface 5b of the base substrate 5. While being formed, the second pattern wiring layer 7 constitutes a mounting portion on the motherboard 93.

The first to fourth resin-coated copper foils 8 to 11 are joined to the base substrate 2 with respect to the base substrate 5. As shown in FIG. 5, the first resin-coated copper foil 8 is joined to the first main surface 5 a side of the base substrate 5, and together with the base substrate 5, two layers of first pattern wiring are provided on the base substrate portion 2. The layer 6 is formed. The second copper foil 9 with resin is joined to the second main surface 5b side of the base substrate 5 as shown in FIG. The layer 7 is formed. Third copper foil with resin 1
The 0 and fourth copper foils 11 with resin are respectively bonded to the first pattern wiring layer 6 and the second pattern wiring layer 7.

The base substrate 5 has a low dielectric constant and a low Tan.
δ, ie, excellent high frequency characteristics and heat resistant temperature of 160 ° C
The above organic substrates, for example, polyphenylethylene (PPE), bismaleid triazine (BT-resi
n), polytetrafluoroethylene (trade name: Teflon), polyimide, liquid crystal polymer (LCP), polynorbornene (PNB), glass epoxy, phenol resin,
It is formed by using a base material made of polyolefin, ceramic or a mixture of ceramic and organic base material. The base substrate 5 has heat resistance and chemical resistance as well as mechanical rigidity. For example, an epoxy-based substrate FR-5 or the like that is more inexpensive than the above-described base material may be used. The base substrate 5 is formed by using an inexpensive organic base material used in the above-described general wiring substrate device, but compared with a Si substrate or a glass substrate which is relatively expensive due to being formed with high precision. Inexpensive, and material cost can be reduced. Of course, the base substrate 5 may use a Si substrate or a glass substrate as a material.

The structure and manufacturing process of the base substrate portion 2 will be described below with reference to the manufacturing process diagram shown in FIG. 2 and FIGS.
This will be described in detail with reference to FIG. The base substrate part manufacturing process
As shown in FIG. 3, the first wiring layer 1 having an appropriate pattern
The first wiring layer forming step s-1 for forming 2a and 12b is defined as a first step. Drilling or laser drilling is performed on the base substrate 5 to form a plurality of via holes 13 at predetermined positions. The base substrate 5 has a via hole 13 in which an inner wall is subjected to conduction processing by plating or the like.
After the conductive paste is embedded, a lid is formed by a plating method. Photolithographic processing is performed on the copper foil layer on the base substrate 5, and as shown in FIG.
The first wiring layers 12a and 12b are formed on the layers a and b, respectively. The first wiring layers 12a and 12b constitute a wiring portion or a ground plane of a power supply system or a control system.

As shown in FIG. 5, the base substrate portion manufacturing process is performed on the base substrate 5 on which the first wiring layers 12a and 12b are formed.
The first resin-attached copper foil joining step s-2 for joining the first resin-attached copper foil 8 and the second resin-attached copper foil 9 to the front and back principal surfaces 5a and 5b is referred to as a second step. The first resin-coated copper foil 8 and the second resin-coated copper foil 9 each have a resin layer 8b, 9b lined over one main surface of each of the copper foil layers 8a, 9a. Front and back principal surfaces 5 of base substrate 5
a and 5b with an adhesive resin (prepreg). In addition, when the resin layers 8b and 9b are formed of a thermoplastic resin such as LCP, the first resin-coated copper foil 8 and the second resin-coated copper foil 9 do not require an adhesive resin. Joined.

In the base substrate part manufacturing process, the first copper foil with resin 8 and the second copper foil 9 with resin are joined to the first wiring layers 12a and 12b, respectively, as shown in FIG. A via hole forming step s-3 for forming a plurality of via holes 8c and 9c is referred to as a third step. In the via-hole forming step s-3, the first resin-coated copper foil 8 and the second resin-coated copper foil 9 are subjected to photolithographic processing and then wet-etched to form openings as shown in FIG. The first wiring layers 12a and 12b are formed as a receiving hole by performing laser processing using these openings as masks, and holes are formed in the respective resin layers 8b and 9b. In the via hole forming step s-3, each hole is subjected to conduction processing by via plating or the like, and a conductive material is filled by plating or filling of a conductive paste to form via holes 8c and 9c.

In the base substrate part manufacturing process, the second wiring layers 14a and 14b having a predetermined pattern are formed on the copper foil layers 8a and 9a of the first resin-coated copper foil 8 and the second resin-coated copper foil 9, respectively. The second wiring layer forming step s-4 is referred to as a fourth step. Second
In the wiring layer forming step s-4, photolithographic processing is performed on the copper foil layers 8a and 9a, and the base substrate intermediate 15 on which the second wiring layers 14a and 14b are formed as shown in FIG. To produce The base substrate part intermediate body 15
The second wiring layers 14a and 14b correspond to the first wiring layer 12 described above.
Similar to a and 12b, a wiring section or a ground plane of a power supply system and a control system is configured. The base substrate intermediate 15 has a first wiring layer 12a and a second wiring layer 14a on the front and back main surfaces, respectively.
A first pattern wiring layer 6 composed of two layers, and a second pattern wiring layer 7 composed of two layers of a first wiring layer 12b and a second wiring layer 14b.

In the base substrate part manufacturing process, a flattening step is performed to make the front and back main surfaces of the base substrate part intermediate body 15 manufactured through the above-described steps a flat surface with high precision. In the base substrate part 2, the first pattern wiring layer 6 of the base substrate part intermediate body 15 forms a mounting surface of the high-frequency circuit part 4 as described later. The base substrate part 2 is manufactured by using the inexpensive double-sided substrate having the organic substrate as the base substrate 5 and manufacturing the base substrate part intermediate body 15 through the above-described process. The pattern is transferred to the first pattern wiring layer 6 and high precision flatness cannot be maintained.

Therefore, in the base substrate part manufacturing process, a flattening step for making the front and back main surfaces of the base substrate part intermediate body 15 a highly accurate flat surface is performed. That is, as shown in FIG. 8, the third substrate-attached copper foil 10 and the fourth
The second resin-coated copper foil bonding step s-5 for bonding the resin-coated copper foil 11 to the above-described resin-coated copper foil 11 is defined as a fifth step. These third resin-coated copper foils 1
The copper foil with resin 0 and the fourth resin foil 11 also have the same copper foil layer 10a as the copper foil with resin 8 and the copper foil with second resin 9 described above.
Resin layers 10b and 11b are lined on the entire one main surface of 11a. As shown in FIG. 9, the third resin-coated copper foil 10 and the fourth resin-coated copper foil 11 are bonded to the second wiring layers 14a and 14b with an adhesive resin using the resin layers 10b and 11b as bonding surfaces. You.

In the base substrate part manufacturing process, the third resin-coated copper foil 10 and the fourth resin-coated copper foil 11 are polished to form a high-precision flat surface on the uppermost layer. The polishing step s-6 for forming No. 3 is referred to as a sixth step. The polishing step s-6 is to polish the entire surface of the base substrate intermediate body 15 by polishing the entirety of the third resin-coated copper foil 10 and the fourth resin-coated copper foil 11 with an abrasive made of a mixed solution of alumina and silica, for example. The main surface is formed as a highly accurate flat surface. In the polishing step s-6, as shown in FIG. 10, polishing is performed on the third resin-coated copper foil 10 side, in other words, on the build-up forming surface 3 until the second wiring layer 14a is exposed to the outside. . In the polishing step s-6, polishing is performed on the fourth resin-coated copper foil 11 side such that the second wiring layer 14b is not exposed to the outside and a predetermined thickness Δx is left on the resin layer 11b. .

As described above, the base substrate portion 2 has the second wiring layer 14b formed on the main surface 5b side of the base substrate 5 and the second wiring layer 14b is
By limiting the grinding amount of the resin layer 11b, the structure is not exposed to the outside. With this configuration, in the high-frequency circuit part manufacturing process described below, the base substrate part 2 is configured such that the resin layer 11b made of a dielectric layer is used as the second wiring layer 14b.
From chemicals and mechanical or thermal loads. After the high-frequency circuit section 4 is formed, the second wiring layer 14b is cut and removed until the above-mentioned resin layer 11b is exposed to the outside, and is connected to each electrode section formed on the motherboard 93 to form an input / output terminal section. Constitute.

In the base substrate part manufacturing process, the base substrate 5 passes through the base substrate intermediate 15 through the above-described steps.
The base substrate section 2 on which the build-up forming surface 3 having good flatness accuracy is formed is manufactured. In the base substrate part manufacturing process, by making the process of manufacturing the base substrate intermediate body 15 the same as the conventional process of manufacturing a multilayer substrate, the manufacturing process of the multilayer substrate can be applied as it is, and mass productivity is high. It should be noted that the manufacturing process of the base substrate portion is not limited to the above-described process, and it is a matter of course that various conventional manufacturing processes of a multilayer substrate may be employed.

In the manufacturing process of the base substrate portion,
The fourth resin-coated copper foil 11 bonded to the base substrate 5 via the second resin-coated copper foil 9 is polished at the copper foil portion 11a. In the base substrate part manufacturing process, the joined constituent members are pressed by a press to be integrated. In the base substrate part manufacturing process, the familiarity between the metal press surface and the fourth resin-coated copper foil 11 is good,
High-precision pressing is performed. Therefore,
The fourth resin-attached copper foil 11 may be another resin-attached metal foil instead of copper-bonded since the copper foil portion does not constitute a wiring layer.

As another embodiment, the base substrate part manufacturing process shown in FIGS.
The method is characterized in that a base substrate 16 similar to the above-described base substrate 2 is manufactured by using the base 18. Double-sided board 17,
A substrate 18 is made of the same material as the base substrate 5 described above, which is generally used in a conventional multi-layer substrate manufacturing process. In the base substrate part manufacturing process, since the individual steps are the same as the respective manufacturing steps of the base substrate part 2 described above, detailed description of the individual components is omitted.

In the base substrate part manufacturing process, the conductor parts 17b and 17c bonded to the front and back main surfaces of the base material 17a are subjected to photolithographic processing on the double-sided substrate 17 shown in FIG. By performing patterning and etching, predetermined circuit patterns 19a and 19b are formed as shown in FIG. Via holes 20a are formed in the double-sided substrate 17 as shown in FIG. The first circuit pattern 19a and the second circuit pattern 19b correspond to the first circuit pattern of the base substrate 2 described above.
It corresponds to the wiring layer 12a and the second wiring layer 14a, respectively. In the second double-sided board 18 as well, predetermined circuit patterns 21a and 21b and via holes 22 are respectively formed on the conductor portions 18b and 18c on the front and back main surfaces of the base material 18a. These first circuit pattern 21a and second
The circuit pattern 21b corresponds to the first wiring layer 12b and the second wiring layer 14b of the base substrate portion 2 described above, respectively.

As shown in FIG. 13, in the base substrate part manufacturing process, the two double-sided substrates 17 and 18 are
To join. In the base substrate part manufacturing process, the base substrate intermediate body 24 shown in FIG. 14 is thereby manufactured.
The base substrate intermediate body 24 is formed by forming a first pattern wiring layer and a second pattern wiring layer composed of two wiring layers on the front and back main surfaces of the intermediate resin material 23 by the double-sided substrates 17 and 18, respectively.

In the base substrate part manufacturing step, a flattening processing step is performed on the base substrate intermediate body 24 in the same manner as in the above-described base substrate part 2 manufacturing step. In the base substrate part manufacturing process, as shown in FIG.
Of the resin-attached copper foil 25 and the second resin-attached copper foil 26. The first copper foil 25 with resin and the second copper foil 26 with resin also
A resin layer 25 is formed on the entire one main surface of the copper foil layers 25a and 26a.
b, 26b are lined. First copper foil 25 with resin
And the second resin-coated copper foil 26, as shown in FIG. 15, the second wiring layer 19b, with the resin layers 25b and 26b side as the joining surface.
21b are respectively bonded by an adhesive resin.

In the base substrate part manufacturing process, the first copper foil with resin 25 and the second copper foil with resin 26 are polished. In the base substrate part manufacturing process, as shown in FIG. 16, on the first double-sided substrate 17 side, the first resin-coated copper foil 25 is polished so that the second wiring layer 19b is exposed to the outside. Thus, the build-up forming surface 27 which is flattened with high precision is formed. In the base substrate part manufacturing step, the second resin-coated copper foil 26 is polished on the second double-sided substrate 18 side so that the circuit pattern 21b is not exposed to the outside by the resin layer 26b. In the base substrate part manufacturing process, the base substrate part 16 is manufactured through the above-described steps.

In the base substrate portion manufacturing process, as described above, after bonding the resin-coated copper foil to the front and back principal surfaces of the base substrate intermediate body, these resin-coated copper foils are polished to perform a flattening process. Although it was performed, it is not limited to such a step. FIGS. 17 to 1 show a third embodiment.
The base substrate part manufacturing process shown in FIG. 9 is characterized by including a process of applying a resin material 28 to the base substrate intermediate body 15 manufactured through the above-described manufacturing processes by dip coating. That is, in the base substrate part manufacturing process, the resin material 28 dissolved in a liquid state with an appropriate solvent is stored in the dip tank 29, and as shown in FIG.
5 is applied.

In the base substrate part manufacturing process, the base substrate intermediate 15 is taken out of the dip tank 29 at an appropriate pulling speed after an appropriate immersion time. In the base substrate part manufacturing process, the front and back main surfaces of the base substrate intermediate 15 taken out of the dip tank 29 are
The liquid resin material is hardened as shown in FIG.
b is formed at the same time. In the base substrate part manufacturing process, the base substrate intermediate body 15 on which the resin layers 28a and 28b are formed is held in a horizontal state and subjected to a baking process to evaporate excess organic components. In the base substrate part manufacturing process, the base substrate intermediate 15
Is subjected to the above-mentioned polishing, and the respective resin layers 28a,
By polishing a predetermined amount of 8b, the base substrate unit 30 shown in FIG. 19 is manufactured.

In the manufacturing process of the base substrate portion, the resin layer 28a having a predetermined film thickness accuracy with respect to the base substrate intermediate body 15 is controlled by controlling the concentration of the liquid resin material 28, the immersion time or the pulling speed. 28b can be formed. For the resin material 28, for example, a directional chemical etching method (RIE: Reactive Ion Etchi
ng) or a dry etching method such as a plasma etching method (PE: Plasma Etching).

In the base substrate 2 manufactured through the above-described steps, a multilayer high-frequency circuit section 4 is formed on the build-up forming surface 3 through a high-frequency element layer forming step as described later. As shown in FIG. 1, the high-frequency circuit unit 4 includes a first insulating layer 31, a first wiring layer 32, and a second insulating layer 33.
And the second wiring layer 34 are formed by lamination. In the high-frequency circuit section 4, the thickness T of the second wiring layer 34 is formed to be larger than the thickness t of the first wiring layer 32 as described in detail later, and the details will be described later in the first wiring layer 32. Through the formation process, the resistance element section 35, the capacitor element section 36, and the high-frequency inductor element section 37 are formed. In the high-frequency circuit section 4, a low-frequency inductor element section 38 is formed in a second wiring layer 34 through a forming process described in detail later.

As described above, the high-frequency circuit section 4 flattens the build-up forming surface 3 of the base substrate section 2 with high precision, thereby forming the resistance element section 35 and the capacitor element section 3.
6. The high-frequency inductor element section 37 or the low-frequency inductor element section 38 is formed with high precision. In a general organic substrate, the thickness of a conductor pattern formed on the surface thereof is relatively large, several tens of μm, and the accuracy of an element portion having a thickness of several μm formed thereon is deteriorated. The high-frequency circuit section 4 can form each element section with high precision on the build-up forming surface 3 of the base substrate section 2 which has been flattened with high precision as described above.

As shown in FIG. 1, the high-frequency circuit section 4
Except for the electrode portion 39 formed on the wiring layer 34 of FIG.
Of the protective layer 40. Base board part 2
Is the high-frequency circuit unit 4 described above on the build-up forming surface 3.
Is formed, and the resin layer 11b of the fourth resin-coated copper foil 11 covering the second wiring layer 14b is removed, and the entirety is removed except for the connection electrode portion 41 formed on the second wiring layer 14b. It is covered by a layer 42. The base substrate 2 and the high-frequency circuit 4 constitute a module substrate 1. The module substrate 1 is mounted on the mother substrate 93 via the electrode portion 41 with the main surface (mounting surface) 2a facing the build-up forming surface 3 of the base substrate 2 as a mounting surface,
The high-frequency IC 90 and the chip component 91 are connected to the electrode portion 39 formed on the second wiring layer 34 of the high-frequency circuit portion 4, and the high-frequency module device 94 shown in FIG. Constitute.

Next, the manufacturing process of the high-frequency circuit section 4 will be described in detail with reference to the manufacturing process diagrams shown in FIG. 2 and FIGS. The manufacturing process of the high-frequency circuit unit 4 is such that the first insulating layer 3 is formed on the flattened build-up forming surface 3 of the base substrate unit 2 manufactured through the above-described process.
1 and a first insulating layer forming step s-7 for forming
A base treatment step s-8 of performing a base treatment for forming a first wiring layer 32 having each element portion on the insulating layer 31 of FIG.
A first wiring layer forming step s- for forming the first wiring layer 32;
9 to manufacture the module substrate intermediate 43.

The manufacturing process of the high-frequency circuit section 4 includes a second insulating layer forming step of laminating and forming a second insulating layer 33 on the first wiring layer 32 with respect to the module substrate intermediate 43 described above. 10, a second wiring layer forming step s-11 for forming a second wiring layer 34 on the second insulating layer 33, and a protective layer for covering the second wiring layer 34 except for the electrode portions 39. 40
The module substrate 1 is manufactured through a first protective layer forming step s-12 for forming a substrate. Note that, in the manufacturing process of the high-frequency circuit unit 4, the polishing step of polishing the resin layer 28 b covering the second wiring layer 14 b of the base substrate unit 2 to expose the electrode unit 41 to the outside, and excluding the electrode unit 41 And the second wiring layer 1
And a protective layer forming step of forming a second protective layer 42 covering the first protective layer 4b.

The high-frequency circuit section 4 includes the base substrate section 2
Wiring layer 3 formed on build-up forming surface 3 of FIG.
Although it is configured with a two-layer structure of the second and second wiring layers 34, it may be configured with a multi-layered wiring layer. In the high-frequency circuit section 4, the high-frequency inductor element section 37 is formed and formed on the inner wiring layer, and the low-frequency inductor element section 38 is formed on the surface layer wiring layer.
Is formed as a film.

In the first insulating layer forming step s-7,
An insulating dielectric material is supplied on the build-up forming surface 3 of the base substrate portion 2 to form a first insulating layer 31 as shown in FIG.
Is formed as a film. An organic base material having a low dielectric constant and a low Tanδ like the base substrate 5, that is, excellent in high-frequency characteristics and excellent in heat resistance and chemical resistance and high heat resistance of at least 160 ° C. or more is used as the insulating dielectric material. . Specific examples of the insulating dielectric material include benzocyclobutene (BCB),
Polyimide, polynorbornene (PNB), liquid crystal polymer (LCP), bismaleide triazine (BT-resin), polyphenylethylene (PPE), epoxy resin, or acrylic resin is used. As a film forming method, a spin coating method, a curtain coating method, a roll coating method, a dip coating method, or the like that maintains uniformity of application and thickness controllability is applied.

In the first insulating layer forming step s-7,
As shown in FIG. 21, the first film formed on the base substrate portion 2
A large number of via holes 44 are formed in the insulating layer 31 of FIG. Each via hole 44 is formed corresponding to a predetermined electrode portion of the second wiring layer 14a exposed on the build-up formation surface 3, and exposes these electrode portions to the outside. When a photosensitive resin is used as the insulating dielectric material, each via hole 44 is formed by a photolithographic method by attaching a mask formed in a predetermined pattern to the first insulating layer 31. When a non-photosensitive resin is used as an insulating dielectric material, each via hole 44 is dry-etched such as directional chemical etching (RIE) using a photoresist or a metal film such as gold as a mask. Hole formation is performed by the method.

In the underlayer treatment step s-8, a first insulating layer 31 is formed on the first insulating layer 31 by, for example, a sputtering method.
A thin metal film for forming the wiring layer 32 is formed, and this metal thin film is subjected to an etching process to receive the receiving electrode 35a of the resistance element portion 35 and the capacitor element portion 36 as shown in FIG.
The lower electrode 36a is formed as a film. The metal thin film is, for example, C
A film is formed by a metal material such as u, Al, Pt, and Au. The metal thin film may be formed of, for example, Cr, N
A metal thin film of i, Ti, or the like may be formed and formed on these metal thin films.

The metal thin film preferably has etching selectivity when the first wiring layer 32 and the upper electrode 36b of the capacitor element portion 36 to be described later are patterned by wet etching. Since the first wiring layer 32 is subjected to wet etching using a mixed acid of nitric acid, sulfuric acid and acetic acid based on the Cu thin film as will be described later, the metal thin film is patterned and formed.
If the film is formed as a thin film, it is etched at the same time. Therefore, the metal thin film is preferably made of a metal material of Al, Pt, or Au having resistance to the above-described etching solution, and particularly, Al, which is relatively easy to pattern, is suitable.

For example, when Al is used as the metal thin film,
It is formed over the entire surface of the first insulating layer 31 with a thickness of about 2000 ° by a sputtering method. On the metal thin film, a photoresist is patterned by lithographic processing, and the receiving electrode 35 of the resistance element portion 35 is wet-etched using an etching solution such as phosphoric acid.
a and the lower electrode 36a of the capacitor element portion 36 are formed.

In the first wiring layer forming step s-9,
As shown in FIG. 23, a first insulating layer 31 and a tantalum nitride (TaN) layer 45 covering each electrode are formed. T
The aN layer 45 functions not only as a resistor but also as a base of a tantalum oxide (TaO) dielectric film formed by anodic oxidation when forming the capacitor element portion 36 as a film. The TaN layer 45 is formed to a thickness of about 2000 ° by, for example, a sputtering method.
The TaN layer 45 may be a Ta thin film.

In the first wiring layer forming step s-9,
As shown in FIG. 24, the lower electrode 36 of the capacitor element portion 36
a is exposed to the outside through the opening 46a to form an anodizing mask layer 46 for covering other portions. The mask layer 46 for anodization may be made of, for example, a photoresist that can be easily patterned, as long as the coated portion can maintain sufficient insulation with respect to an applied voltage at the time of anodization in the next step. It is formed with a thickness of several μm to several tens μm. The anodic oxidation mask layer 46 may be patterned using another insulating material capable of forming a thin film, for example, a silicon oxide material (SiO ₂ ).

In the first wiring layer forming step s-9,
After forming the anodic oxidation mask layer 46, anodization is performed to selectively anodize the TaN layer 45 corresponding to the lower electrode 36a of the capacitor element portion 36 exposed from the opening 46a. In the anodizing treatment, for example, ammonium borate is used as an electrolytic solution, and a voltage of 50 V to 200 V is applied. The applied voltage is appropriately adjusted so that the TaO dielectric film formed corresponding to the opening 45a of the mask layer 46 for anodic oxidation has a desired thickness. In the first wiring layer forming step s-9, the TaN layer 45 corresponding to the opening 46a is selectively oxidized by removing the mask layer 46 for anodic oxidation, and as shown in FIG. A TaO layer 46 serving as a dielectric material of the element section 36 is formed.

In the first wiring layer forming step s-9,
The TaN layer 45 formed on the entire surface is subjected to, for example, photolithography and dry etching to be patterned into desired sizes of the resistor element portion 35 and the capacitor element portion 36 as shown in FIG. . In the first wiring layer forming step s-9, an appropriately patterned TaN layer 45 for forming a film of the resistor element portion 35 and the capacitor element portion 36 is simultaneously formed by performing the above-described processing. I do. In the first wiring layer forming step s-9, when performing the anodic oxidation treatment on the TaN layer 45 described above, the TaN layer 45 is anodized over the entire surface without using the anodic oxidation mask layer 46. After Ta
The N + TaO layer may be patterned. In the first wiring layer forming step s-9, the surface of the TaN layer provided in the resistor element portion 35 is also anodically oxidized when such a process is performed. Is kept stable for a long time.

In the first wiring layer forming step s-9,
As shown in FIG. 27, the first wiring layer 32 and the TaN layer 4
5, the capacitor element portion 3 facing the lower electrode 36a
The upper electrode 36b and the high-frequency inductor element portion 37 are formed to form a module substrate intermediate 43.
Since the first wiring layer 32 forms the first layer of the high-frequency circuit section 4, it is formed of a Cu wiring having a small loss in a high-frequency band. The first wiring layer 32 is formed on the first insulating layer 31 having a thickness of about 10 μm by, for example, a plating method, a sputtering method, or a vapor deposition method.
It is formed with a thickness of μm. The first wiring layer 32
It is formed as a thin wiring layer with respect to a second wiring layer 34 described later. As described above, the high-frequency inductor element section 37 has a thin first effect due to a skin effect characteristic in which the propagation loss hardly changes when the frequency is greater than the frequency-dependent skin effect thickness and the inductor becomes thinner as the frequency increases.
The characteristics are improved by being formed in the wiring layer 32 of FIG. By performing the second insulating layer forming step s-10 on the module substrate intermediate body 43, the second insulating layer 33 is formed on the first wiring layer 32 as shown in FIG.
Are formed by lamination. The second insulating layer forming step s-10 includes:
This is a step similar to the above-described first insulating layer forming step s-7, in which the above-described organic base material having a low dielectric constant and a low tan δ, that is, excellent in high-frequency characteristics and excellent in heat resistance and chemical resistance is supplied. The film is formed by a film forming method such as a spin coating method, a curtain coating method, a roll coating method, or a dip coating method which maintains the coating uniformity and the thickness controllability.
Since the second insulating layer 33 is formed on the first wiring layer 32 formed as a thin film as described above, it can be formed with high thickness accuracy.

In the second insulating layer forming step s-10, a large number of via holes 47 are formed in the second insulating layer 33 as shown in FIG. Each via hole 47 exposes a predetermined electrode portion formed on the first wiring layer 32, an upper electrode 36 b of the capacitor element portion 36 or the high-frequency inductor element portion 37 to the outside of the second insulating layer 33.
Note that each via hole 47 is also provided in the first insulating layer 31 described above.
Is formed in the same manner as the via hole 44 of FIG.

The second wiring layer 34 is formed on the second insulating layer 33 by the second wiring layer forming step s-11 as shown in FIG. The second wiring layer 34 is also formed of a Cu wiring layer having a small loss in the high frequency band, and since the low frequency inductor element section 38 is formed, the loss of the low frequency inductor element section 38 is sufficiently reduced. Is formed with a large layer thickness. That is, as described above, the low frequency inductor element section 38 has a characteristic that the skin effect of the inductor has a characteristic that the propagation loss hardly occurs when the skin effect is greater than the frequency-dependent skin effect thickness, and that the higher the frequency, the thinner the skin effect. Large second wiring layer 3
4, the characteristics can be improved. The second wiring layer 34 has a thickness of 5 μm or more, preferably 10 μm or more when the module substrate 1 is used for the high-frequency module device 94 and the low-frequency inductor element section 38 functions in a frequency band of about several hundred MHz, for example. It is preferred that

In the second wiring layer forming step s-11, the above-described second wiring layer 34 is formed by, for example, a copper electrolytic plating method. A method for forming the second wiring layer 34 by the copper electrolytic plating method will be described with reference to the process chart shown in FIG. In the copper electrolytic plating step, a copper thin film layer 48 having a thickness of about 5000 ° acting as an electrode for electrolytic extraction is formed over the entire surface of the first insulating layer 34 as shown in FIG. Form. In the copper electrolytic plating step, for example, a Ni film having a thickness of about 250 ° is formed on the second insulating layer 34 in order to improve the adhesion of the formed copper thin film layer 48.
Preferably, a barrier layer such as a layer is formed in advance.

In the copper electrolytic plating step, as shown in FIG.
A plating resist layer 49 of about 2 μm is patterned. In the copper electrolytic plating step, electrolytic copper plating is performed using the copper thin film layer 48 as an electrode for electrolytic extraction, and a copper plating layer of about 10 μm or more is formed on the opening 49a of the plating resist layer 49 as shown in FIG. 50 is formed by lift-up. In the copper electrolytic plating step, the plating resist layer 49 is washed and removed, and an unnecessary copper thin film layer 48 is removed by, for example, a wet etching process as shown in FIG. A second wiring layer 34 having a predetermined pattern is formed. In addition,
In the copper electrolytic plating step, as described above, the low-frequency inductor element section 38 is formed along with the second wiring layer 34 having a predetermined pattern. The low frequency inductor element section 38 is also formed with a sufficient thickness having the above-described characteristics.

As shown in FIG. 30, the second wiring layer 34 is covered with a first protective layer 40 formed in a protective layer forming step s-12. Protective layer forming step s-12
The second wiring layer 34 is formed by using a protective layer material generally used for forming the protective layer, such as a solder resist or an interlayer insulating layer material, and by an appropriate method such as spin coating.
Is formed to cover the entire surface of the substrate. In the protection layer forming step s-12, the protection film layer is subjected to mask coating and photolithography to form the second wiring layer 34.
The first protective layer 40 that exposes the outside of the electrode portion 51 as an opening is formed. The surface of the first protective layer 40 constitutes the mounting surface 4a as described above. In the protective layer forming step s-12, an electrode is formed by performing electroless Ni-Au plating or Ni-Cu plating on the exposed electrode portion 51 as an additional processing step.

As described above, the second wiring layer 14b is formed on the side of the second main surface 5b of the base substrate 5 of the base substrate portion 2, and the resin layer 11b is used just before the second wiring layer 14b is exposed. Be coated. In the base substrate part 2,
After laminating and forming the high-frequency circuit section 4 on the build-up forming surface 3 through the above-described steps, a polishing process for polishing the resin layer 11b is performed in a step before the protective layer forming step s-12, and the second wiring layer 14b Is exposed. The base substrate portion 2 has the second main surface 5b in the above-described protective layer forming step s-12.
A second protective layer 42 is formed on the entire surface of the substrate. The base substrate 2 is mask-coated on the second protective layer 42,
Photolithography treatment is performed to expose the electrode portion 41 to the outside as an opening, and these are subjected to electroless Ni-Au plating or the like to form an electrode.

The module substrate 1 manufactured through the above steps is mounted on the mounting surface 4a of the high-frequency circuit section 4 via the electrode section 39 and the high-frequency IC 90 and the chip component 9 as described above.
1 is mounted by an appropriate mounting method such as a flip chip mounting method. In addition, the mounting surface 2a of the base substrate 2 of the module substrate 1 is mounted on the mother substrate 93 via the electrode portion 41 by a flip-chip mounting method or a solder ball. When the high-frequency IC 90 and the like are mounted on the module substrate 1, a shield cover 92 for eliminating the influence of electromagnetic noise is assembled, and the mounting surface 4a of the high-frequency circuit unit 4 is covered to form a high-frequency module device 94.

Since the high-frequency module device 94 has a structure in which the high-frequency circuit section 4 of the module substrate 1 is covered with the shield cover 92 as described above, the high-frequency IC 9 mounted on the high-frequency circuit section 4
0 and the heat generated from the chip component 91
2 may adversely affect the characteristics. Therefore, it is preferable to provide the high-frequency module device 94 with an appropriate heat dissipation structure.

The high-frequency module device 95 shown in FIG.
Is formed by filling a heat conductive resin material 70 between the upper surface of the high-frequency IC 90 and the inner surface of the shield cover 92 which generate a large amount of heat to form a heat dissipation structure. In the high-frequency module device 95, heat generated from the high-frequency IC 90 is transmitted to the shield cover 92 via the heat conductive resin material 70, and is radiated through the shield cover 92. The adverse effects are prevented. In the high-frequency module device 95, the relatively large-sized high-frequency IC 90 is held by the heat conductive resin material 70 and the shield cover 92, so that the mechanical mounting rigidity can be improved.

The high-frequency module device 96 shown in FIG.
Is configured to more efficiently radiate the heat generated from the high-frequency IC 90 and the chip component 91. In addition to the above-described heat conductive resin material 70, the base substrate 2 And a large number of cooling via holes 71 communicating with the high-frequency circuit section 4. Each cooling via hole 71 is formed by the same process when forming the above-described circuit connecting via holes in the base substrate portion 2 and the high-frequency circuit portion 4.

In the high-frequency module device 96, the heat generated from the high-frequency IC 90 is radiated from the shield cover 92 via the heat conductive resin material 70 as described above, and the base substrate portion via the cooling via hole 71. The heat is transmitted to the bottom surface of the device 2 and radiated to the outside. The high-frequency module device 96 performs more efficient heat radiation by radiating heat from above and below the module substrate 1. In addition, the high-frequency module device 96 may constitute a heat dissipation structure only with the cooling via hole 71. Further, the high-frequency module device 96 uses, for example, a copper foil portion 72 formed on the base substrate 5 with a large thickness of, for example, 50 nm, and a cooling via hole 71 is formed in the copper foil portion 72. By connecting them, heat radiation from the base substrate 5 may be performed.

High-frequency module device 97 shown in FIG.
The base substrate portion 2 is formed by a base substrate 73 made of a metal core having good conductivity such as copper or 42 alloy.
Is formed. The high-frequency module device 97 is configured such that the plurality of cooling via holes 71 described above are connected to the base substrate 73, respectively. In the high-frequency module device 97, heat is also radiated from the base substrate 73 through the cooling via hole 71, and more efficient heat radiation is performed by the configuration of the conductive resin material 70 for heat radiation and the structure of the cooling via hole 71 described above. And reliability is improved.

[0090]

As described above in detail, according to the present invention, a high-frequency circuit section in which passive elements are formed and formed on a base substrate section having a flattened build-up formation surface is formed. Since the high-frequency inductor element is formed and formed on the inner wiring layer of the high-frequency circuit portion, and the low-frequency inductor element is formed and formed on the surface wiring layer formed to be thicker than the inner wiring layer. In addition, each inductor element matches the loss characteristic and the skin effect characteristic associated with the thickness of each wiring layer to improve the characteristics. According to the present invention, by making the inner wiring layer thinner, it is possible to form a high-precision thin film of a passive element on the surface wiring portion. Can be achieved.

According to the present invention, a wiring portion such as a power supply and a ground portion and a wiring portion for a control system are formed on the base substrate portion, and a high-frequency signal circuit portion is formed on the high-frequency circuit portion. An inexpensive module substrate and a high-frequency module device, which achieve proper separation and suppress the occurrence of electrical interference to improve characteristics, can be obtained. According to the present invention, a power supply having a sufficient area and a wiring of a ground portion can be formed on a base substrate portion, so that a module substrate and a high-frequency module device that perform power supply with high regulation can be obtained. become.

According to the present invention, the main surface of the base substrate portion is subjected to high-precision flattening processing by using a relatively inexpensive organic substrate having a particularly insulative property as the base substrate to form a build-up forming surface. By directly forming a high-frequency circuit portion having a high-frequency element or a wiring layer formed by a thin-film technology or a thick-film technology on the build-up forming surface, high-precision and high-frequency characteristics are provided in a layer of the high-frequency circuit portion. Good passive elements are formed by a simple process. According to the present invention, the overall cost can be reduced by forming a multi-layer wiring layer on a base substrate made of an inexpensive material in the same manner as in a conventional multi-layer substrate process and forming the base substrate portion at low cost. The module substrate and the high-frequency module device having the above-mentioned structure can be obtained.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a main part of a high-frequency module device according to the present invention.

FIG. 2 is a manufacturing process diagram of a module substrate provided in the high-frequency module device.

FIG. 3 is a longitudinal sectional view of a base substrate used for the module substrate.

FIG. 4 is an explanatory view of a patterning step for the base substrate.

FIG. 5 is an explanatory view of a joining process of a first resin-attached copper foil and a second resin-attached copper foil.

FIG. 6 is a diagram illustrating a process of forming a via;

FIG. 7 is an explanatory diagram of a step of forming a first pattern wiring layer and a second pattern wiring layer.

FIG. 8 is an explanatory view of a joining process of a third resin-attached copper foil and a fourth resin-attached copper foil.

FIG. 9 is a process explanatory view in a state where a third resin-attached copper foil and a fourth resin-attached copper foil are joined.

FIG. 10 is an explanatory view of a polishing step of a third resin-attached copper foil and a fourth resin-attached copper foil.

FIG. 11 is a longitudinal sectional view of another base substrate used for a module substrate.

FIG. 12 is an explanatory diagram of a patterning step for the base substrate.

FIG. 13 is an explanatory diagram of a joining process of the base substrate.

FIG. 14 is a longitudinal sectional view of a base substrate intermediate.

FIG. 15 is an explanatory diagram of a step of bonding a resin-attached copper foil to a base substrate intermediate.

FIG. 16 is a longitudinal sectional view of a base substrate portion subjected to a polishing process.

FIG. 17 is an explanatory diagram of a dipping step.

FIG. 18 is a longitudinal sectional view of a base substrate intermediate.

FIG. 19 is a longitudinal sectional view of a base substrate portion subjected to a polishing process.

FIG. 20 is an explanatory diagram of a first insulating layer forming step of forming a first insulating layer on a base substrate portion.

FIG. 21 is an explanatory diagram of a via hole forming step.

FIG. 22 is an explanatory diagram of a step of forming a film of a receiving electrode of the resistance element portion and a lower electrode of the capacitor element portion.

FIG. 23 is an explanatory diagram of a step of forming a tantalum nitride layer.

FIG. 24 is an explanatory diagram of a step of forming a mask layer for anodic oxidation.

FIG. 25 is an explanatory diagram of a step of forming a TaO layer.

FIG. 26 is an explanatory diagram of a patterning step of a resistor element portion and a capacitor element portion.

FIG. 27 is a longitudinal sectional view of a module substrate intermediate.

FIG. 28 is an explanatory diagram of a step of forming a via hole.

FIG. 29 is an explanatory diagram of a step of forming a second wiring layer.

FIG. 30 is a vertical sectional view of a module substrate.

FIG. 31 is a process explanatory view of a copper electrolytic plating method for forming a second wiring layer.

FIG. 32 is a longitudinal sectional view of a main part of a high-frequency module device provided with a heat dissipation structure.

FIG. 33 is a vertical sectional view of a main part of a high-frequency module device provided with another heat dissipation structure.

FIG. 34 is a longitudinal sectional view of a main part of a high-frequency module device provided with another heat dissipation structure.

FIG. 35 is a configuration diagram of a high-frequency transmission / reception circuit based on a super heterodyne system.

FIG. 36 is a configuration diagram of a high-frequency transmitting / receiving circuit using a direct conversion method.

FIG. 37 is an explanatory diagram of an inductor unit provided in a conventional high-frequency transceiver module.

FIG. 38 is a longitudinal sectional view of a conventional high-frequency transceiver module using a silicon substrate.

FIG. 39 is a longitudinal sectional view of a high-frequency transmitting / receiving module using a conventional glass substrate.

FIG. 40 is a longitudinal sectional view of a package in which a conventional module substrate is mounted on an interposer substrate.

[Explanation of symbols]

1 module board, 2 base board section, 3 build-up forming surface, 4 high frequency circuit section, 5 base board, 6
First pattern wiring layer, 7 Second pattern wiring layer, 8
To 11 copper foil with resin, 12 first layer pattern wiring layer,
Reference Signs List 13 via hole, 14 second wiring layer, 15 base substrate part intermediate, 16 base substrate part, 17, 18 double-sided substrate, 19 circuit pattern, 20 via hole, 21
Circuit pattern, 22 Via hole, 23 Intermediate resin member, 24 Base substrate intermediate, 25, 26 Copper foil with resin, 27 Build-up forming surface, 28 Resin layer, 29
Dipping bath, 30 base substrate section, 31 first insulating layer, 32 first wiring layer, 33 second insulating layer, 34 second wiring layer, 35 resistor element section, 36 capacitor element section, 37 for high frequency Inductor element part, 38 Low frequency inductor element part, 39 electrode part, 40 first protective layer, 41 electrode part, 42 second protective layer, 43 module substrate intermediate, 44 via hole, 45 tantalum nitride layer (TaN layer) ), 46 tantalum oxide layer (TaO layer),
47 via hole, 48 copper thin film layer, 49 plating resist layer, 50 copper plating layer, 70 thermal conductive resin material, 7
DESCRIPTION OF SYMBOLS 1 Heat dissipation via hole, 72 copper foil part, 73 base substrate, 90 high frequency IC, 91 chip parts, 92 shield cover, 93 mother board, 94 to 97 high frequency module device

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/12 301 H01L 23/12 B (72) Inventor Hirokazu Nakayama 6-7 Kita Shinagawa, Shinagawa-ku, Tokyo No. 35 Sony Corporation F term (reference)

Claims (56)

[Claims] A base substrate having a multilayer wiring layer formed on a main surface of the base substrate and a flat main surface of the uppermost layer forming a build-up forming surface; and a build-up of the base substrate. It is composed of a multi-layer wiring part formed build-up on the formation surface, and a high-frequency circuit part in which a wiring pattern is formed on each wiring part via a dielectric insulating layer and a passive element is formed and formed. In the high-frequency circuit portion, an inductor element for a high-frequency band is formed and formed in a wiring portion on an inner layer side, and a low-frequency band inductor element is formed in a wiring portion on a surface layer which is thicker than the wiring portion on the inner layer side. A substrate device for a high-frequency module, wherein the inductor element is formed as a film. 2. A base substrate portion having a multi-layered wiring layer formed on a main surface of a base substrate made of an organic substrate, and a top-up layer subjected to a flattening process to form a build-up formation surface; It is composed of a multi-layer wiring portion formed by build-up on the build-up formation surface of the base substrate portion, and a wiring pattern is formed on each wiring portion via a dielectric insulating layer and a passive element is formed by film formation. A high-frequency circuit portion, wherein the high-frequency circuit portion has an inductor element for a high-frequency band formed in a film on the inner layer side wiring portion, and a surface layer on the surface layer side which is thicker than the inner layer side wiring portion. A substrate device for a high-frequency module, wherein an inductor element for a low-frequency band is formed and formed in a wiring portion. 3. A double-sided substrate formed on the basis of polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, benzocyclobutene, and a double-sided substrate formed of a mixture of a ceramic and an organic material. The high frequency module substrate device according to claim 2, wherein the substrate device is an organic substrate selected from a substrate and an epoxy-based double-sided substrate. 4. The dielectric insulating layer of the high-frequency circuit section is made of an organic material selected from polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, benzocyclobutene, an epoxy resin material, and an acrylic resin material. The high frequency module substrate device according to claim 1, wherein the substrate device is formed by: 5. The high-frequency module substrate device according to claim 1, wherein the wiring portion of the high-frequency circuit portion has the wiring pattern formed of a copper pattern. 6. The wiring part of the high-frequency circuit part is a thin-film copper pattern in which the pattern of the inner layer side wiring part is formed by a thin film technique, and the pattern of the surface layer side wiring part is formed by a thick film technique. The high-frequency module substrate device according to claim 5, wherein the substrate is a thick copper pattern. 7. The internal wiring part of the high-frequency circuit part includes:
A thin film resistor element portion is formed on the dielectric insulating layer by a thin film forming technique, and a part of the thin film resistor element portion is oxidized by anodic oxidation to form a thin film capacitor element as a high dielectric film. 3. A thin film resistor element is formed.
The substrate device for a high-frequency module according to item 1. 8. The wiring portion on the inner layer side of the high-frequency circuit portion,
A thin-film resistor element portion is formed on the dielectric insulating layer by a thin-film forming technique, and the entire surface of the thin-film resistor element portion is oxidized by anodic oxidation to form an oxide thin film with the high dielectric film of the thin-film capacitor element and the thin-film resistor. The high frequency module substrate device according to claim 1 or 2, wherein the thin film capacitor element and the thin film resistor element are formed in a simultaneous process by being patterned as a protective film of the body element. 9. The high-frequency module substrate device according to claim 7, wherein the thin film constituting the thin-film resistor layer is tantalum nitride or tantalum. 10. A protection layer is formed in the high-frequency circuit section by exposing an input / output terminal section of a wiring pattern formed on a dielectric insulating layer of the surface layer side wiring section to the outside. The high frequency module substrate device according to claim 1 or 2, wherein 11. A wiring pattern having a power input terminal portion and a signal input / output terminal portion on a second main surface opposite to the build-up formation surface, and the input / output terminal portion is formed on the base substrate. 3. The substrate device for a high-frequency module according to claim 1, wherein a protective layer is formed by exposing the protective layer to the outside. 12. The high frequency module substrate device according to claim 10, wherein the protective layer is formed of the same material or a solder resist as the dielectric insulating layer of the wiring portion. 13. A multi-layer wiring layer is formed on a main surface of a base substrate made of an organic substrate, and a flattened main surface of the uppermost layer forms a build-up formation surface and faces the build-up formation surface. A base substrate in which a wiring pattern having a power input terminal portion and a signal input terminal portion is formed on a second main surface to be formed; and a multilayer wiring formed by build-up on the build-up formation surface of the base substrate portion A high-frequency module substrate comprising: a high-frequency circuit portion comprising a wiring pattern formed on each wiring portion via a dielectric insulating layer and a passive element formed on each wiring portion; and a surface layer side of the high-frequency module substrate. At least one high-frequency integrated circuit element connected to and mounted on the input / output terminal of the wiring pattern formed on the dielectric insulating layer of the wiring part; A mother board on which the high-frequency module substrate is mounted by connecting the input terminal of the wiring pattern formed on the second main surface of the module substrate; A high frequency band inductor element is formed and formed, and a low frequency band inductor element is formed and formed in a surface layer side wiring portion having a thickness greater than that of the inner layer side wiring portion. High-frequency module device. 14. A high-frequency module substrate comprising: a base substrate formed of polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, and benzocyclobutene; and a mixture of a ceramic and an organic material. An organic substrate selected from a formed double-sided substrate or an epoxy-based double-sided substrate. The uppermost layer of a multilayer wiring layer formed on a main surface is subjected to a flattening process to form a flat build-up forming surface. The high-frequency module device according to claim 13, wherein: 15. The high-frequency circuit section of the high-frequency module substrate, wherein the dielectric insulating layer is formed of polyphenylethylene,
The high-frequency module device according to claim 13, wherein the high-frequency module device is formed of an organic material selected from bismaleide triazine, polyimide, liquid crystal polymer, polynorbornene, and benzocyclobutene, an epoxy resin material, and an acrylic resin material. 16. The high-frequency module device according to claim 13, wherein the high-frequency circuit portion of the high-frequency module substrate has a wiring pattern of the wiring portion formed by a copper pattern. 17. A high-frequency circuit portion of the high-frequency module substrate, wherein a copper pattern of the inner layer side wiring portion is formed by a thin film technology, and a copper pattern of the surface layer side wiring portion is formed by a thick film technology. The high-frequency module device according to claim 16, wherein: 18. A high-frequency circuit portion of the high-frequency module substrate, wherein a thin-film resistor element portion is formed on the inner-layer side wiring portion on the dielectric insulating layer by a thin-film forming technique. 14. The high-frequency module device according to claim 13, wherein the thin film capacitor element and the thin film resistor element are formed by oxidizing the part by an anodizing method to form a high dielectric film of the thin film capacitor element. 19. A high-frequency circuit section of the high-frequency module substrate, wherein a thin-film resistor element section is formed on the dielectric layer by an inner-layer wiring section by a thin-film forming technique. An oxide thin film oxidized by the anodic oxidation method is patterned as a high dielectric film of the thin film capacitor element and a protective film of the thin film resistor element, so that the thin film capacitor element and the thin film resistor element are formed in a simultaneous process. The high-frequency module device according to claim 13, wherein: 20. A thin film constituting the thin film resistor layer,
20. The high-frequency module device according to claim 18, wherein the high-frequency module device is tantalum nitride or tantalum. 21. A high-frequency circuit portion of the high-frequency module substrate, wherein a protection layer for exposing an input / output terminal portion of the wiring pattern formed on the surface layer side wiring portion to the outside is formed. The high-frequency module device according to claim 13. 22. A protection layer formed on the base substrate of the high-frequency module substrate by exposing an input / output terminal portion of the wiring pattern formed on the second main surface to the outside. The high-frequency module device according to claim 13. 23. The high-frequency module device according to claim 21, wherein the protection layer is formed of the same material or a solder resist as the dielectric insulating layer of the wiring portion. 24. The high-frequency module device according to claim 13, wherein a shield cover covering the entire surface including the high-frequency integrated circuit element is attached to the high-frequency circuit portion of the high-frequency module substrate. 25. The high frequency circuit portion of the high frequency module substrate is filled with a resin material having thermal conductivity between the high frequency integrated circuit element and the shield cover. The high-frequency module device as described in the above. 26. A high-frequency circuit portion of the high-frequency module substrate, wherein a plurality of heat-radiating via holes penetrating through the base substrate are formed at positions corresponding to the mounting area of the high-frequency integrated circuit element. 14. A heat radiating means connected to each heat radiating via hole is provided.
A high-frequency module device according to item 1. 27. The high-frequency module device according to claim 26, wherein said heat radiation means is constituted by a heat radiation pattern having a large thickness formed on said base substrate. 28. The high-frequency module device according to claim 26, wherein the base substrate is formed of a multilayer substrate including a metal plate, and the metal plate constitutes a heat radiating unit. 29. A base substrate having a step of forming a flat build-up formation surface by performing a flattening process on an uppermost layer of a multi-layer substrate having a multi-layer wiring layer formed on at least one main surface. Part manufacturing process, on the build-up forming surface of the base substrate, forming a wiring pattern through a dielectric insulating layer, respectively, and forming a wiring part formed by forming a passive element into a multilayer to form a high-frequency circuit part. And a high-frequency circuit part manufacturing step of build-up formation.In the high-frequency circuit part manufacturing step, in the step of forming an inner layer side wiring part, a high-frequency band inductor element is formed and formed on the dielectric insulating layer, In the step of forming the surface-side wiring portion, an inductor element for a low-frequency band is formed and formed on the dielectric insulating layer having a thickness greater than the dielectric insulating layer of the inner-layer side wiring portion. Method for producing a high frequency module substrate and wherein the. 30. A step of flattening the build-up forming surface in the step of manufacturing the base substrate portion, the step of bonding a resin-coated copper foil covering a surface wiring layer, and the step of bonding the high-frequency circuit portion to the resin-coated copper foil. Forming a via hole for connection with the substrate and polishing the resin-coated copper foil so as to expose a surface electrode portion of the surface wiring layer by a surface polishing method. 3. The method for manufacturing a substrate device for a high-frequency module according to item 1. 31. A step of flattening the uppermost layer in the step of manufacturing the base substrate portion, the step of covering the entire surface of the surface wiring layer with an insulating resin, and the step of exposing the surface electrode portion of the surface wiring layer by surface polishing. 30. The method according to claim 29, further comprising the step of polishing the insulating resin layer. 32. In the high frequency circuit part manufacturing process,
A step of forming the pattern of the inner wiring portion on the insulating resin layer as a thin copper pattern by a thin film technique, and a step of forming the pattern of the surface wiring portion on the insulating resin layer as a thick copper pattern by a thick film technique 30. The method of manufacturing a high-frequency module substrate device according to claim 29, further comprising: 33. A step of forming an inner-layer wiring portion in the step of manufacturing a high-frequency circuit portion, comprising the steps of: forming a dielectric insulating layer on a lower wiring layer with a dielectric insulating material; Forming a via hole, forming a thin-film resistor element on the dielectric insulating layer by a thin-film formation technique, and forming a part of the thin-film resistor element into an oxide film by anodic oxidation. 30. A thin film capacitor element and a thin film resistor element are formed in the inner layer side wiring portion in a simultaneous step by using the oxide film as a high dielectric film of a thin film capacitor element.
3. The method for manufacturing a substrate device for a high-frequency module according to item 1. 34. The step of forming the inner layer side wiring part in the step of manufacturing the high frequency circuit part includes the step of forming a dielectric insulating layer on a lower wiring layer with a dielectric insulating material, and the step of forming an interlayer connection at a predetermined position of the dielectric insulating layer. Forming a via hole, forming a thin film resistor element on the dielectric insulating layer by a thin film forming technique, and forming an oxide film by anodic oxidation on the entire surface of the thin film resistor element. 30. The thin film capacitor element and the thin film resistor element are formed in the inner layer side wiring portion at the same time by using an oxide film as a high dielectric film of the thin film capacitor element and a protective film of the thin film resistor element. 3. The method for manufacturing a substrate device for a high-frequency module according to item 1. 35. In the step of manufacturing the high-frequency circuit section, the dielectric insulating layer of each of the wiring sections is formed of an organic material selected from polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, and benzocyclobutene; 30. The method for manufacturing a high-frequency module substrate device according to claim 29, wherein the substrate device is formed of an epoxy resin material or an acrylic resin material. 36. The method according to claim 29, further comprising the step of forming a protective layer on a surface wiring portion of the high-frequency circuit portion, the protective layer exposing an input / output terminal portion of the wiring pattern to the outside. Of manufacturing a substrate device for a high-frequency module. 37. The base substrate having a wiring pattern having a power input terminal portion and a signal input / output terminal portion formed on a second main surface opposite to the build-up formation surface, wherein the input / output terminal portion is disposed outside. 30. The method for manufacturing a substrate device for a high-frequency module according to claim 29, further comprising a protective layer forming step of forming a protective layer exposed to the substrate. 38. An organic material selected from polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, and benzocyclobutene used for the dielectric insulating layer of each of the wiring portions, and an epoxy resin. 38. The method for manufacturing a high-frequency module substrate device according to claim 36, wherein the substrate device is formed of a material, an acrylic resin material, or a solder resist. 39. A step of forming an upper wiring portion having a dielectric insulating layer and a predetermined wiring pattern on a surface wiring portion of the high-frequency circuit portion, and forming a protective layer by exposing a predetermined electrode portion of the wiring pattern. Forming an upper wiring portion, and a high frequency integrated circuit device mounting step of directly mounting at least one high frequency integrated circuit device connected to the electrode portion on the upper wiring portion. A method for manufacturing a high-frequency module substrate device according to claim 29. 40. A step of filling a heat conductive resin material between the high frequency integrated circuit element and the shield cover, and attaching a shield cover covering the entire surface including the high frequency integrated circuit element to the high frequency circuit portion. The method for manufacturing a high-frequency module substrate device according to claim 39, further comprising a shield cover attaching step. 41. In the high frequency circuit part manufacturing process,
Forming a plurality of heat radiation via holes penetrating through the base substrate at positions corresponding to the mounting region of the high frequency integrated circuit element, wherein the heat radiation via holes are provided on the base substrate in the base substrate part manufacturing step 40. The method for manufacturing a high-frequency module substrate device according to claim 39, wherein the substrate device is connected to a heat radiating unit. 42. In the base substrate part manufacturing process,
42. The method for manufacturing a high-frequency module substrate device according to claim 41, wherein a heat radiation pattern having a large thickness is formed on the surface wiring portion. 43. A base having a step of forming a flat build-up formation surface by performing a flattening process on an uppermost layer of a base substrate made of a multi-layer organic substrate having a multi-layer wiring layer formed on at least one main surface. A substrate part manufacturing process, and a high frequency formed by forming a wiring part on a build-up forming surface of the base substrate part through a dielectric insulating layer, and forming a multilayer wiring part formed by forming passive elements. The circuit portion is formed by build-up, and the inner layer side wiring portion is formed by forming an inductor element for a high frequency band on the dielectric insulating layer, and the surface layer side wiring portion is formed from the dielectric insulating layer of the inner layer side wiring portion. A high-frequency module for manufacturing a high-frequency module substrate through a high-frequency circuit part manufacturing process of forming a low-frequency band inductor element on the dielectric insulating layer having a large thickness. A board manufacturing process, and a mother board having connection terminal portions formed on the main surface corresponding to input / output terminal portions formed on the second main surface facing the build-up formation surface of the base substrate, A high-frequency module mounting step of mounting the high-frequency module substrate by connecting the opposing input / output terminal portion and connection terminal portion to each other. 44. The step of flattening the build-up forming surface in the step of manufacturing the base substrate portion, the step of bonding a resin-coated copper foil covering a surface wiring layer, and the step of bonding the high-frequency circuit portion to the resin-coated copper foil. Forming a via hole for connection to the substrate and polishing the resin-coated copper foil so as to expose a surface electrode portion of the surface wiring layer by a surface polishing method. 3. The method for manufacturing a high-frequency module device according to item 1. 45. A step of flattening the uppermost layer in the step of manufacturing the base substrate portion, the step of covering the entire surface of the surface wiring layer with an insulating resin, and the step of exposing the surface electrode portion of the surface wiring layer by surface polishing. 44. The method for manufacturing a high-frequency module device according to claim 43, further comprising a step of polishing the insulating resin layer. 46. In the high frequency circuit part manufacturing process,
A step of forming the pattern of the inner wiring portion on the insulating resin layer as a thin copper pattern by a thin film technique, and a step of forming the pattern of the surface wiring portion on the insulating resin layer as a thick copper pattern by a thick film technique The method of manufacturing a high-frequency module device according to claim 43, further comprising: 47. The step of forming an inner-layer side wiring portion in the step of manufacturing a high-frequency circuit portion includes a step of forming a dielectric insulating layer with a dielectric insulating material on a lower wiring layer and an interlayer connection at a predetermined position of the dielectric insulating layer. Forming a via hole, forming a thin-film resistor element on the dielectric insulating layer by a thin-film formation technique, and forming a part of the thin-film resistor element into an oxide film by anodic oxidation. 44. The thin film capacitor element and the thin film resistor element are formed in the inner layer side wiring portion in a simultaneous step by using the oxide film as a high dielectric film of the thin film capacitor element.
3. The method for manufacturing a high-frequency module device according to item 1. 48. The step of forming an inner-layer wiring portion in the step of manufacturing a high-frequency circuit portion includes a step of forming a dielectric insulating layer on a lower wiring layer with a dielectric insulating material, and an interlayer connection at a predetermined position of the dielectric insulating layer. Forming a via hole, forming a thin film resistor element on the dielectric insulating layer by a thin film forming technique, and forming an oxide film by anodic oxidation on the entire surface of the thin film resistor element. 44. A thin film capacitor element and a thin film resistor element are formed in the inner layer side wiring portion at the same time by using an oxide film as a high dielectric film of the thin film capacitor element and a protective film of the thin film resistor element. 3. The method for manufacturing a high-frequency module device according to item 1. 49. In the high frequency circuit part manufacturing process, an organic material selected from the group consisting of polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, and benzocyclobutene; The method for manufacturing a high-frequency module device according to claim 43, wherein the high-frequency module device is formed of an epoxy resin material or an acrylic resin material. 50. The method according to claim 43, further comprising a protective layer forming step of forming a protective layer on a surface wiring portion of the high-frequency circuit portion to expose an input / output terminal portion of the wiring pattern outward. Of manufacturing a high-frequency module device. 51. A base substrate having a wiring pattern having a power input terminal portion and a signal input / output terminal portion formed on a second main surface opposite to the build-up forming surface, wherein the input / output terminal portion is disposed outside. The method for manufacturing a high-frequency module device according to claim 43, further comprising a protective layer forming step of forming a protective layer exposed to the outside. 52. An organic material selected from polyphenylethylene, bismaleidotriazine, polyimide, liquid crystal polymer, polynorbornene, and benzocyclobutene used for the dielectric insulating layer of each of the wiring portions, and an epoxy resin. 52. The method for manufacturing a high-frequency module device according to claim 50, wherein the high-frequency module device is formed of a material, an acrylic resin material, or a solder resist. 53. A step of forming an upper wiring portion having a dielectric insulating layer and a predetermined wiring pattern on a surface wiring portion of the high-frequency circuit portion, and forming a protective layer by exposing a predetermined electrode portion of the wiring pattern. Forming an upper wiring portion, and a high frequency integrated circuit device mounting step of directly mounting at least one high frequency integrated circuit device connected to the electrode portion on the upper wiring portion. A method for manufacturing a high-frequency module device according to claim 43. 54. A step of filling a heat conductive resin material between the high frequency integrated circuit element and the shield cover, and attaching a shield cover covering the entire surface including the high frequency integrated circuit element to the high frequency circuit portion. The method for manufacturing a high-frequency module device according to claim 43, further comprising a shield cover attaching step. 55. In the high frequency circuit part manufacturing process,
Forming a plurality of heat radiation via holes penetrating through the base substrate at positions corresponding to the mounting region of the high frequency integrated circuit element, wherein the heat radiation via holes are provided on the base substrate in the base substrate part manufacturing step 44. The method for manufacturing a high-frequency module device according to claim 43, wherein the method is connected to a heat radiating unit. 56. The method of manufacturing a base substrate part according to claim
The method for manufacturing a high-frequency module device according to claim 43, wherein a heat radiation pattern having a thickness of 50 µm or more is formed on the surface wiring portion.