JP2002359413A - 強磁性トンネル磁気抵抗素子 - Google Patents
強磁性トンネル磁気抵抗素子Info
- Publication number
- JP2002359413A JP2002359413A JP2001163757A JP2001163757A JP2002359413A JP 2002359413 A JP2002359413 A JP 2002359413A JP 2001163757 A JP2001163757 A JP 2001163757A JP 2001163757 A JP2001163757 A JP 2001163757A JP 2002359413 A JP2002359413 A JP 2002359413A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferromagnetic
- magnetoresistive element
- tunnel magnetoresistive
- ferromagnetic tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 18
- 230000005291 magnetic effect Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 19
- 230000010287 polarization Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 62
- 239000010410 layer Substances 0.000 description 13
- 230000005415 magnetization Effects 0.000 description 7
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005316 antiferromagnetic exchange Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 102100036738 Guanine nucleotide-binding protein subunit alpha-11 Human genes 0.000 description 1
- 101100283445 Homo sapiens GNA11 gene Proteins 0.000 description 1
- 101000777456 Mus musculus Disintegrin and metalloproteinase domain-containing protein 15 Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Semiconductor Memories (AREA)
- Measuring Magnetic Variables (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001163757A JP2002359413A (ja) | 2001-05-31 | 2001-05-31 | 強磁性トンネル磁気抵抗素子 |
| US10/478,203 US7220498B2 (en) | 2001-05-31 | 2002-05-24 | Tunnel magnetoresistance element |
| EP08102546A EP1925946A3 (de) | 2001-05-31 | 2002-05-24 | Tunnel-Magnetwiderstandselement |
| PCT/JP2002/005049 WO2002099905A1 (fr) | 2001-05-31 | 2002-05-24 | Element de magnetoresistance tunnel |
| EP02730704A EP1391942A4 (de) | 2001-05-31 | 2002-05-24 | Tunnel-magnetwiderstandselement |
| KR1020037015607A KR100886602B1 (ko) | 2001-05-31 | 2002-05-24 | 터널자기저항소자 |
| US11/673,919 US7514160B2 (en) | 2001-05-31 | 2007-02-12 | Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001163757A JP2002359413A (ja) | 2001-05-31 | 2001-05-31 | 強磁性トンネル磁気抵抗素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002359413A true JP2002359413A (ja) | 2002-12-13 |
Family
ID=19006666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001163757A Pending JP2002359413A (ja) | 2001-05-31 | 2001-05-31 | 強磁性トンネル磁気抵抗素子 |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP1925946A3 (de) |
| JP (1) | JP2002359413A (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8319263B2 (en) | 2004-03-12 | 2012-11-27 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US8394649B2 (en) | 2004-09-07 | 2013-03-12 | Canaon Anelva Corporation | Method of production of a magnetoresistance effect device |
| JP2018505555A (ja) * | 2015-05-13 | 2018-02-22 | コリア ユニバーシティ リサーチ アンド ビジネス ファウンデーションＫｏｒｅａ Ｕｎｉｖｅｒｓｉｔｙ Ｒｅｓｅａｒｃｈ Ａｎｄ Ｂｕｓｉｎｅｓｓ Ｆｏｕｎｄａｔｉｏｎ | 磁気メモリ素子 |
| US10608169B2 (en) | 2017-01-03 | 2020-03-31 | Korea University Research And Business Foundation | Magnetic tunnel junction device with spin-filter structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2774774B1 (fr) * | 1998-02-11 | 2000-03-03 | Commissariat Energie Atomique | Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance |
| GB2343308B (en) * | 1998-10-30 | 2000-10-11 | Nikolai Franz Gregor Schwabe | Magnetic storage device |
-
2001
- 2001-05-31 JP JP2001163757A patent/JP2002359413A/ja active Pending
-
2002
- 2002-05-24 EP EP08102546A patent/EP1925946A3/de not_active Withdrawn
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10680167B2 (en) | 2004-03-12 | 2020-06-09 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US11968909B2 (en) | 2004-03-12 | 2024-04-23 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
| US8405134B2 (en) | 2004-03-12 | 2013-03-26 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US8319263B2 (en) | 2004-03-12 | 2012-11-27 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US9123463B2 (en) | 2004-03-12 | 2015-09-01 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US9608198B2 (en) | 2004-03-12 | 2017-03-28 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US11737372B2 (en) | 2004-03-12 | 2023-08-22 | Godo Kaisha Ip Bridge 1 | Method of manufacturing a magnetoresistive random access memory (MRAM) |
| US10367138B2 (en) | 2004-03-12 | 2019-07-30 | Japan Science And Technology Agency | Magnetic tunnel junction device |
| US11233193B2 (en) | 2004-03-12 | 2022-01-25 | Japan Science And Technology Agency | Method of manufacturing a magnetorestive random access memeory (MRAM) |
| US8934290B2 (en) | 2004-09-07 | 2015-01-13 | Canon Anelva Corporation | Magnetoresistance effect device and method of production of the same |
| US8394649B2 (en) | 2004-09-07 | 2013-03-12 | Canaon Anelva Corporation | Method of production of a magnetoresistance effect device |
| JP2018505555A (ja) * | 2015-05-13 | 2018-02-22 | コリア ユニバーシティ リサーチ アンド ビジネス ファウンデーションＫｏｒｅａ Ｕｎｉｖｅｒｓｉｔｙ Ｒｅｓｅａｒｃｈ Ａｎｄ Ｂｕｓｉｎｅｓｓ Ｆｏｕｎｄａｔｉｏｎ | 磁気メモリ素子 |
| US10886460B2 (en) | 2017-01-03 | 2021-01-05 | Korea University Research And Business Foundation | Magnetic tunnel junction device with spin-filter structure |
| US10608169B2 (en) | 2017-01-03 | 2020-03-31 | Korea University Research And Business Foundation | Magnetic tunnel junction device with spin-filter structure |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1925946A3 (de) | 2010-10-20 |
| EP1925946A2 (de) | 2008-05-28 |
| EP1925946A8 (de) | 2010-06-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20031021 |