JP2002353377A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of making lightweight and thinning. SOLUTION: A high polymer polyphenylene ether whose number average molecular weight is 10,000 or 30,000 and a phenol compound are redistributed and reacted under the existence of a radical initiator to produce a modified phenol product. A modified epoxy resin product reacts a phenol hydroxyl group in the modified phenol product and an epoxy compound. An epoxy composition containing an epoxy resin, a curing agent of the epoxy resin, silica powder whose average particle diameter is 0.1-10 μm, aluminum hydroxide powder whose average particle diameter is 0.1-10 μm is cured to form a laminated plate. A semiconductor chip 2 is mounted on a core material 1 formed of the laminated plate. The deflection of the core material 1 can be lessened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device (semiconductor package) used for producing an electronic circuit or the like.

[0002]

2. Description of the Related Art Conventionally, a wiring board (printed wiring board) having a circuit pattern is formed by performing a circuit forming process such as a subtractive method on a metal foil-clad laminate, and this wiring board is used as a core material of a semiconductor device. The semiconductor device can be formed by mounting a semiconductor chip on the core material and sealing the mounted semiconductor chip with a resin or the like. The insulating layer is formed of a polyimide resin (hereinafter, referred to as a BT resin) composed of bismaleimide and a triazine resin, because the metal foil-clad laminate applied to the core material has excellent high-frequency characteristics. That is, a prepreg is formed by impregnating a reinforcing substrate formed of a glass cloth or the like with a BT resin, and laminating a metal foil on a copper foil or the like on the prepreg, followed by heating and pressing to form a BT resin in the prepreg. Is cured and the reinforcing substrate and B
An insulating layer made of a cured product of the T resin is formed, and the insulating layer and the metal foil are bonded and integrated by the curing of the BT resin.
As described above, a metal foil-clad laminate (glass base material BT resin laminate) for a core material of a semiconductor device can be formed.

[0003]

However, the core material using the above cured BT resin as an insulating layer has low rigidity and has a large amount of deflection due to a load. When the amount of deflection of the core material is large, the bonding portion between the core material, which is a printed wiring board, and the semiconductor chip is separated by a mechanical impact, and the electrical connection may be short-circuited. The junction between the semiconductor device (semiconductor package) and the motherboard on which the semiconductor device (semiconductor package) is mounted may be peeled off and short-circuited due to expansion and contraction due to heat generated by the semiconductor device. Therefore, in order to reduce the amount of bending, the thickness of the core material must be increased, and there has been a problem that the semiconductor device cannot be reduced in weight. A core material having a cured product of BT resin as an insulating layer has a large linear expansion coefficient (coefficient of thermal expansion). In a case where a circuit pattern provided in an inner layer or an outer layer of the core material is connected by a via hole, a core material is used. There is a problem that via hole plating may be broken due to thermal expansion and contraction of the material, and via hole reliability (through hole reliability) is low.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor device which can be reduced in weight and which can enhance the reliability of via holes.

[0005]

The semiconductor device according to claim 1 of the present invention has a number average molecular weight of 10,000 to 3,000.
A polyphenolene ether and a phenolic compound in the presence of a radical initiator to produce a modified phenol product, and a modified epoxy obtained by reacting a phenolic hydroxyl group in the modified phenol product with an epoxy compound. Contains a resin product, an epoxy resin, a curing agent for the epoxy resin, silica powder having an average particle size of 0.1 to 10 μm, and aluminum hydroxide powder having an average particle size of 0.1 to 10 μm. The epoxy composition is cured to form a laminate, and the semiconductor chip 2 is mounted on a core material 1 formed from the laminate.

A semiconductor device according to a second aspect of the present invention is characterized in that, in addition to the configuration of the first aspect, the semiconductor device is a core material 1 having a via hole 3 for signal transmission.

A semiconductor device according to a third aspect of the present invention is characterized in that, in addition to the configuration of the first or second aspect, the semiconductor device is a core material 1 having at least one build-up layer 4. .

[0008]

Embodiments of the present invention will be described below.

The epoxy resin of the epoxy resin composition used in the present invention is not particularly limited as long as it is a known epoxy resin conventionally used for laminates. For example, bisphenol A type epoxy resin , Bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, isocyanurate type epoxy resin, hydantoin type epoxy resin, alicyclic epoxy resin, biphenyl type epoxy resin Resins, polyfunctional epoxy resins and the like can be mentioned, and these can be used alone or in combination of two or more. Further, a flame-retardant epoxy resin obtained by brominating the above-mentioned epoxy resin can also be used.

As the curing agent for the epoxy resin of the epoxy resin composition used in the present invention, amines such as commonly used primary and secondary amines and phenols containing polyphenols such as bisphenol A and bisphenol F are used. And acid anhydrides. They are,
Used alone or in combination. Further, for example, an imidazole-based curing accelerator can be added to the curing reaction of the epoxy resin as needed.

The epoxy resin composition used in the present invention redistributes a high molecular weight polyphenylene ether having a number average molecular weight of 10,000 to 30,000 and a phenolic compound in the presence of a radical initiator as being involved in the crosslinked structure of the epoxy resin. A modified phenol product comprising a low molecular weight polyphenylene ether having a phenolic hydroxyl group of a phenolic compound at a terminal is produced by reacting, and a modified epoxy resin product obtained by reacting the phenolic hydroxyl group of the modified phenol product with an epoxy compound is produced. It contains.

The above number average molecular weight is 10,000 to 30.
As a typical example of the high molecular weight polyphenylene ether of 000, poly (2,6-dimethyl-1,4 phenylene oxide) can be given. Such polyphenylene ethers are described, for example, in US Pat.
It can be produced by the synthesis method disclosed in the specification of No. 9568. The phenolic compound is preferably a polyfunctional phenol having two or more phenolic hydroxyl groups in the molecule, such as polyphenol bisphenol A, phenol novolak, and cresol novolak. Examples of the radical initiator include benzoyl peroxide (benzoyl peroxide), dicumyl peroxide, tert-butylcumyl peroxide, di-tert-butyl peroxide, and 2,5-dimethyl-2,5-dioxide. -Tert-butylperoxyhexyne-3,2,5-dimethyl-2,5-di-tert-
Butyl peroxyhexane, α, α'-bis (tert
Peroxides such as -butylperoxy-m-isopropyl) benzene [also referred to as 1,4 (or 1,3) -bis (tert-butylperoxyisopropyl) benzene]. In addition, although the radical initiator is not a peroxide, a commercially available initiator “Biscumyl” (trade name, manufactured by Nippon Oil & Fats Co., Ltd.) (1 minute half-life temperature 330 ° C.) can also be used.

When a polymer polyphenylene ether having a number average molecular weight of 10,000 to 30,000 is reacted with a phenolic compound in a solvent such as toluene or chloroform in the presence of a radical initiator, first, the polymer polyphenylene ether is radicalized, A redistribution reaction in which a low-molecular-weight polyphenylene ether whose straight chain is cleaved proceeds to proceed, and the activated polyphenylene ether reacts with the phenolic compound to produce a low-molecular-weight polyphenylene having a phenolic hydroxyl group of a phenolic compound at a terminal. A modified phenol product consisting of ether is formed. The number average molecular weight of this modified phenol product is from 1000 to 3000
Is limited to That is, if it exceeds 3,000, the melt viscosity of the semi-cured product of the epoxy resin composition of the present invention increases, and if it is less than 1,000, the mechanical strength and heat resistance of the laminate decrease.

In the above redistribution reaction, the amount of the radical initiator (particularly, benzoyl peroxide) is preferably 3 to 20 parts by weight based on 100 parts by weight of the polymer polyphenylene ether. Is preferably 3 to 20 parts by weight based on 100 parts by weight of the polymer polyphenylene ether. That is, when the amount of the radical initiator (particularly, benzoyl peroxide) and the amount of the phenolic compound are excessive, the redistribution reaction proceeds excessively and the number average molecular weight of the low-molecular-weight polyphenylene ether is reduced. Mechanical strength and heat resistance may be reduced. In addition, a radical initiator (particularly,
If the amounts of benzoyl peroxide) and the phenolic compound are too small, the redistribution reaction does not proceed and the number average molecular weight does not decrease. As a result, the polyphenylene ether does not take part in the crosslinked structure constituting the cured product of the epoxy resin, and may remain in a free form.

The above redistribution reaction comprises toluene, benzene,
80 to 120 ° C in an aromatic hydrocarbon solvent such as xylene
To 10 to 100 minutes. When an epoxy compound such as epichlorohydrin is reacted with a modified phenol product comprising a low-molecular-weight polyphenylene ether having a phenolic hydroxyl group of a phenolic compound at the end, which is formed through this redistribution reaction, a modified epoxy resin modified with polyphenylene ether is formed. Things are obtained.

The reaction conditions for the formation of the modified epoxy resin product are as follows. The epoxy compound has a molar ratio of epoxy group to the phenolic hydroxyl group of a low molecular weight polyphenylene ether having a phenolic hydroxyl group of a phenolic compound at the end. The reaction is carried out at a temperature of 80 to 120 ° C. for a reaction time of usually 1 hour to 10 hours, preferably 5 to 8 hours.
Implemented in time. In this reaction, a basic catalyst, for example, an aqueous solution of sodium hydroxide, potassium hydroxide or the like is used in the same amount as the phenolic hydroxyl group of the low molecular weight polyphenylene ether. The amount of the basic catalyst added is at least 1 equivalent, preferably 1.
It is at least 2 equivalents, particularly preferably at least 1.5 equivalents.
In this reaction, if necessary, the same solvent as the solvent used in the redistribution reaction may be added, and further, another solvent may be added.

After the formation reaction of the modified epoxy resin product, the resulting system is cooled, poured into a poor solvent with respect to polyphenylene ether such as methanol, and precipitated as a precipitate to be separated. The precipitate is further separated with water and methanol. Washing removes unreacted epoxy compound and basic catalyst.
The modified epoxy resin product has a low melt viscosity and a high fluidity, and further has a high compatibility with the various epoxy resins described above, and constitutes a homogeneous epoxy resin varnish. The modified epoxy resin product is also useful as a raw material for producing polyphenylene ether having terminal amine and polyphenylene ether having terminal carboxylic acid by further reacting polyamine or polycarboxylic acid.

Here, referring to the constituent substances of the modified epoxy resin product, a compound in which an epoxy group of an epoxy compound is introduced via a phenolic hydroxyl group of a phenolic compound bonded to a terminal of a low molecular weight polyphenylene ether is used as a component. And Therefore, this compound undergoes a crosslinking reaction by the curing agent for the epoxy resin, and as a result, the polyphenylene ether participates in the crosslinked structure.

The epoxy resin composition used in the present invention comprises, as an inorganic filler, silica powder having an average particle size of 0.1 to 10 μm, preferably 0.4 to 0.6 μm;
It contains aluminum hydroxide powder of 10 to 10 µm, preferably 2.0 to 4.0 µm. Silica powder is better than other inorganic powders in electrical insulation, heat resistance, dimensional stability, chemical resistance,
It is excellent in reinforcing property, and aluminum hydroxide is more excellent in flame retardancy and reinforcing property than other inorganic powders, and is inexpensive. Therefore, by using silica powder and aluminum hydroxide powder, compared to using other inorganic powders, the electric insulation, heat resistance, dimensional stability, chemical resistance, strength, and flame retardancy are excellent and inexpensive. It is possible to form a laminated plate and a core material.

If the average particle size of the silica powder or the aluminum hydroxide powder is less than 0.1 μm, the viscosity of the resin varnish described below will increase too much. If added, the amount of resin in the resin varnish becomes insufficient, and as a result, defects such as fraying occur in the formed laminate. The average particle size of the silica powder is 10
If it exceeds μm, the filter for removing foreign substances is likely to be clogged and the productivity is reduced, and if spherical silica is used, the cost of the material will be considerably increased, and the core material (laminate) The increase in the surface roughness of (1) decreases the strength of the terminal joint between the semiconductor chip and the core material (laminate). If the average particle size of the aluminum hydroxide powder exceeds 10 μm, the filter for removing foreign substances is likely to be clogged and the productivity is reduced, and the surface roughness of the core material (laminate) is reduced. As the size increases, the strength of the terminal joint between the semiconductor chip and the core material (laminate) decreases.

The epoxy resin composition used in the present invention can be prepared by mixing the above modified epoxy resin product, epoxy resin, a curing agent thereof, silica powder and aluminum hydroxide powder. It is preferable that the mixing ratio of the curing agent is set in the range of 0.03 to 0.4 equivalent with respect to 1 equivalent of the epoxy resin. The amount of the modified epoxy resin product is 5 to 65% by weight (parts by weight) based on 35 to 95% by weight (parts by weight) of the solid content of the epoxy resin and its curing agent. Is preferred. Further, the amount of the silica powder is preferably 30 to 50% by weight based on the modified epoxy resin product, the epoxy resin and the curing agent thereof, and the amount of the aluminum hydroxide powder is preferably the above-mentioned modified epoxy resin. Preferably, the amount is 10 to 20% by weight based on the resin product, the epoxy resin and the curing agent thereof.

The laminate used in the present invention is a single-sided or double-sided metal foil-clad laminate having an insulating layer containing a cured product of the above epoxy resin composition. The formation of such a laminate is performed as follows. First, the epoxy resin composition is dissolved in a solvent to prepare a resin varnish.
Solvents for this resin varnish include toluene, xylene,
Benzene, ketone, alcohols and the like can be used, and the mixing ratio of the epoxy resin composition and the solvent can be appropriately set in consideration of a desired viscosity and the like.

Next, a prepreg is formed by impregnating and drying the above-mentioned resin varnish in a reinforcing base material and semi-curing the epoxy resin composition in the reinforcing base material to a B-stage state. Examples of the reinforcing substrate include known materials such as glass cloth, aramid cloth, polyester cloth, pulp paper, and linter paper. The prepreg can be formed by a general method. For example, the reinforcing base material is impregnated with the resin varnish and adhered thereto by, for example, immersing the reinforcing base material in a resin varnish. Although the resin content of the prepreg is not particularly limited, it is 30 to 70% by weight.
It is preferred that In addition, at the time of impregnation, if the resin varnish is kept at 25 to 35 ° C., the modified epoxy resin product in the resin varnish, the curing reaction of the curing agent to the epoxy resin can be prevented, and the impregnation property to the base material can be increased, The properties of the plate can be improved. In heating and drying after impregnating the resin varnish, a temperature of 80 to 180 ° C is preferable. The reason is that if this heating and drying is insufficient, only the surface of the prepreg is dried and the solvent remains inside, causing distortion due to the difference in resin concentration between the surface and the inside of the prepreg, Fine cracks occur on the prepreg surface. Also, if the prepreg surface is excessively heated and dried, the viscosity of the prepreg surface changes rapidly during the drying process, causing uneven streaks and resin sagging on the prepreg surface, resulting in uneven adhesion between the metal foil and the prepreg. Large and small unevenness in the peeling strength of the foil, the heat resistance of the solder, and the dielectric properties occur.

Next, one or a plurality of prepregs thus produced and a metal foil are laminated to form a pressure-receiving body.
By heating and pressurizing the pressure-receiving body, the epoxy resin composition in the prepreg is cured to form an insulating layer composed of a cured material of the reinforcing base material and the epoxy resin composition, and the insulating layer is cured by curing the epoxy resin composition. And a metal foil are bonded together to obtain a laminate. As the metal foil, a copper foil, an aluminum foil, or the like can be used. In addition, since the above-mentioned pressing is performed for joining the metal foil and the prepreg and adjusting the thickness, the pressing conditions can be selected as needed. In addition, since the crosslinking reaction between the modified phenol product modified with polyphenylene ether, the epoxy resin, and the curing agent of the epoxy resin mainly depends on the reaction characteristics of the curing agent, the heating temperature and the heating time are set according to the type of the curing agent. Choose. For example, generally, a temperature of 150 to 300 ° C., a pressure of 4.9 MPa (50 kg / cm ² ), and a time of about 10 to 60 minutes are guidelines.

The metal foil-clad laminate thus obtained does not impair the properties of the epoxy resin and the polyphenylene ether, has excellent high-frequency properties such as dielectric properties, and furthermore has the heat resistance and adhesive strength that affect the solder heat resistance. The processability such as through-holes and punching due to the strength of the substrate and the reliability of circuit formation due to the etching property are also excellent.

The laminate of the present invention can be formed by forming the above resin varnish into a film containing no reinforcing base material by a casting method, and using this sheet instead of a prepreg. When using this casting method, for example, a resin varnish is applied to a sheet insoluble in the solvent of a resin varnish such as a polyester sheet or a polyimide sheet to a thickness of 5 to 700 μm and dried sufficiently to melt the blended resin. It is superior in that a film can be produced more easily at a relatively low temperature than by extrusion molding. The above-mentioned sheet for casting the resin varnish is practical because the use of a sheet surface-treated with a release agent facilitates peeling.

The semiconductor device of the present invention can be formed by forming a core material from the above-mentioned laminate and mounting a semiconductor chip (semiconductor element) on the core material using a known method.

The semiconductor device shown in FIG. 1 uses a single-sided metal foil-clad laminate as a laminate. First, a circuit forming step such as a subtractive method is performed on the lower surface of the single-sided metal-foiled laminate. Forming a circuit pattern 5,
Next, a plurality of solder balls are joined on the circuit pattern 5 by using reflow or the like to form the core material 1 having a plurality of solder bumps 6 on the lower surface. Next, a semiconductor chip 2 such as an IC is mounted on the lower surface of the core material 1 and the mounted semiconductor chip 2 is sealed with a sealing resin 7, whereby a surface-mounted semiconductor device can be formed.

The semiconductor device shown in FIG. 2 uses a double-sided metal foil-clad laminate as a laminate. First, a circuit-forming step such as a subtractive method is performed on the double-sided metal-foil-clad laminate to form a double-sided metal foil-clad laminate. A circuit pattern 5 and a via hole (plated through hole) 3 for signal transmission for connecting these are formed, and then a plurality of solder balls are joined on the circuit pattern 5 on one side by using reflow or the like. Then, a multilayer core material 1 having a plurality of solder bumps 6 on the lower surface is formed. Next, a semiconductor chip 2 such as an IC is mounted on the upper surface of the core material 1, and the mounted semiconductor chip 2 is sealed with a sealing resin 7, whereby a surface-mounted semiconductor device can be formed.

The semiconductor device shown in FIG. 3 uses a double-sided metal foil-clad laminate as a laminate. First, a double-sided metal foil-clad laminate is subjected to a circuit forming process such as a subtractive method to form a double-sided metal foil-clad laminate. The circuit pattern 5 is formed. Next, the build-up layer 4 is formed on one surface of the laminate on which the circuit pattern 5 is formed. The build-up layer 4 is formed by laminating a metal foil such as a copper foil or the like via the insulating member 8 such as a prepreg or a film on the surface of the laminate on which the circuit pattern 5 is formed, and then integrating the layers by heating and pressing. Can be formed. After forming a multi-layered laminate in this way, by performing the same circuit forming process as described above, a signal for forming the circuit pattern 5 on the metal foil of the build-up layer 4 and connecting the plurality of circuit patterns 5 is formed. A via hole (plating through hole) 3 for transmission is formed, and then a plurality of solder balls are bonded on the lowermost circuit pattern 5 by using reflow or the like, thereby forming a plurality of solder bumps 6 on the lower surface. To form a multilayer core material 1. Next, a semiconductor chip 2 such as an IC is provided on the lower surface of the core material 1.
Is mounted, and the mounted semiconductor chip 2 is sealed with a sealing resin 7.
By performing sealing, a semiconductor device of a surface mount type can be formed. The above build-up layer 4 may be formed on both sides of the laminate on which the circuit pattern 5 is formed, if necessary.

In the semiconductor device of the present invention, the epoxy composition is cured to form a laminate, and the core material 1 formed from the laminate is used. Compared to using a core material
The rigidity of the core material 1 can be increased, and the amount of deflection can be reduced. Therefore, the thickness of the core material 1 can be made thinner and lighter than before. Further, the core material 1 used in the present invention can have a smaller linear expansion coefficient than the core material formed from the glass base material BT resin laminate, and therefore, the thermal expansion and contraction of the core material is reduced, and the plating of the via hole is performed. Can improve via hole reliability (through hole reliability) without disconnection.

[0032]

The present invention will be described below in detail with reference to examples.

Example 1 First, the number average molecular weight Mn = 2
0000 polymer polyphenylene ether (hereinafter referred to as PPE
(Manufactured by Japan GE Plastics Co., Ltd.) 100
100 parts of toluene was added to 6 parts by weight of benzoyl peroxide and 6 parts of bisphenol A, a phenolic compound, and the mixture was stirred at 90 ° C. for 60 minutes, and redistributed to give phenolic terminal A modified phenol product consisting of a low molecular weight PPE having the phenolic hydroxyl group of the compound was obtained in solution. This denatured phenol product was subjected to gel permeation chromatography (column configuration: Super manufactured by Tosoh Corporation).
As a result of measuring the molecular weight distribution by rHM-M (1) + SuperHM-H (1), the number average molecular weight was 2300.
Met.

Next, 8 parts of epichlorohydrin and 8 parts of an aqueous sodium hydroxide solution (50%) were added, and the mixture was stirred at 100 ° C. for 4 hours to react the phenolic hydroxyl group in the above-mentioned modified phenol product with an epoxy compound, thereby modifying the compound. The product was an epoxy resin product.

The modified epoxy resin product was cooled to room temperature, and precipitated by adding 1 liter of methanol. The precipitate was washed with 1 liter of methanol, twice with 1 liter of water, and again with 1 liter of methanol. This solid was dried under reduced pressure at 70 ° C. to obtain a sample. This sample was dissolved in a solvent of carbon tetrachloride to give 1.5
A% carbon tetrachloride solution, using a quartz cell having an optical path length of 10mm was measured infrared spectrum, the value of absorbance of the phenolic hydroxyl groups before and after the reaction (3622cm ^-1), P
When the reaction rate between the phenolic hydroxyl group of bisphenol A bound to PE and epichlorohydrin was determined, 91% of the phenolic hydroxyl groups had reacted.

Next, 90 parts by weight of the above modified epoxy resin product and 135 parts by weight of an epoxy resin (a brominated bisphenol A type epoxy resin “YDB-500” manufactured by Toto Kasei Co., Ltd.) 1 part by weight of a curing agent (dicyandiamide), 1 part by weight of a catalyst (2-ethyl-4-methylimidazole), and 286 parts by weight of a solvent (toluene) are placed in a separable flask and stirred at room temperature for 30 minutes. Air cooling was performed to obtain a resin liquid at 25 ° C. Next, 225 parts by weight of silica powder ("SO-C2"
(Sphere), average particle size of 0.5 μm) and 80 parts by weight of aluminum hydroxide powder (“CL-30” manufactured by Sumitomo Chemical Co., Ltd.).
3) and an average particle size of 3 μm) were added to the above resin solution by a disper, and then the mixture was stirred with the disper at 1,000 to 1,500 rpm for 5 minutes. Thereafter, the mixture was stirred in a basket mill for 1 hour to obtain a resin varnish containing the epoxy resin composition of the present invention as a component. This varnish had a low initial viscosity, had no precipitation phenomenon, and had excellent storage stability.

Next, after 24 hours, the resin varnish was
A prepreg having a resin content of 65% by weight was obtained by impregnating a m-thick E glass cloth, drying at 140 ° C. for 4 minutes, and semi-curing to a B-stage shape. Next, an 18 μm copper foil was placed on one side of this prepreg to form a pressure-receiving body, and heated and pressed at 190 ° C. at a pressure of 20 kg / cm ² for 100 minutes, and a copper foil laminated on one side having a thickness of 0.8 mm. A copper-clad laminate was obtained.

Next, after forming a circuit pattern 5 by subjecting the above single-sided copper-clad laminate to a circuit forming process by a subtractive method, a solder resist (“Taiyo Ink”) is applied to the laminate on which the circuit pattern 5 is formed. PSR40
00AUS5 ”) is formed by patterning, and then a plurality of solder balls (“ SMIC spark balls ”manufactured by Senju Metal) are joined on the circuit pattern 5 by reflow, so that a plurality of solder balls are formed on the lower surface. The core material 1 having the bumps 6 was formed.

Next, a semiconductor chip 2 such as an IC (a comb-shaped aluminum wiring test element group (TEG) element manufactured by Matsushita Electric Works) is bonded and mounted on the lower surface of the core material 1 using a silver paste and mounted. 2 is a sealing resin 7 (Panasealer CV5, a liquid sealing material manufactured by Matsushita Electric Works)
193AN ”) (liquid sealing by potting method)
Then, a surface-mounted semiconductor device as shown in FIG. 1 was formed.

Example 2 A prepreg obtained in the same manner as in Example 1 was provided with 18 μm copper foil on both surfaces to form a pressure-receiving body, and heated and pressed at 190 ° C. at a pressure of 20 kg / cm ² for 100 minutes. A double-sided copper-clad laminate having a thickness of 0.8 mm and a copper foil laminated on both sides was obtained. Next, a circuit forming process is performed on the double-sided copper-clad laminate by a subtractive method to form circuit patterns 5 on both sides and via holes for signal transmission for connecting these circuit patterns 5 (plating through holes). After forming the circuit pattern 3, a solder resist similar to the above is patterned and formed on the laminate on which the circuit pattern 5 is formed, and then a plurality of solder balls similar to the above are formed on the circuit pattern 5 by reflow. By joining, a multilayer core material 1 having a plurality of solder bumps 6 on the lower surface was formed. Thereafter, a surface-mounted semiconductor device as shown in FIG.

Example 3 A circuit pattern 5 was formed on both sides by subjecting a double-sided copper-clad laminate obtained in the same manner as in Example 2 to a circuit forming step by a subtractive method. The build-up layer 4 was formed on one side of the laminated plate on which was formed. The build-up layer 4 has an insulating film of 0.06 mm thickness (“ABF-H” made by Ajinomoto) and a thickness of 18
A copper foil having a thickness of μm was placed thereon, laminated using a vacuum laminator, and then cured by oven curing. After forming a multi-layered laminate in this way, by performing the same circuit forming process as described above, a signal for forming the circuit pattern 5 on the copper foil of the build-up layer 4 and connecting the plurality of circuit patterns 5 is formed. A via hole (plated through hole) 3 for transmission was formed. Thereafter, a solder resist similar to the above is patterned and formed on the multilayer laminate on which the circuit pattern 5 is formed, and then a plurality of the solder balls are formed on the lowermost circuit pattern 5 by reflow. By joining, a multilayer core material 1 having a plurality of solder bumps 6 on the lower surface was formed. After this,
A surface-mounted semiconductor device as shown in FIG. 3 was formed in the same manner as in Example 1.

Comparative Example 1 A semiconductor device was formed in the same manner as in Example 1 except that a laminated plate using BT resin (HL-830 manufactured by Mitsubishi Gas Chemical Company) was used.

Comparative Example 2 A semiconductor device was formed in the same manner as in Example 2 except that the laminated plate of Comparative Example 1 was used.

Comparative Example 3 A semiconductor device was formed in the same manner as in Example 3 except that the laminated plate of Comparative Example 1 was used.

With respect to the semiconductor devices of Examples 1 to 3 and Comparative Examples 1 to 3, the amount of deflection due to the load was measured, and the reliability of the via holes of the semiconductor devices of Examples 2, 3 and Comparative Examples 2, 3 were measured. The semiconductor device is placed on a two-point support rod with a fulcrum distance of 100 mm,
The amount of change in deflection when a load was applied to the center of the semiconductor device was measured. The load was 0.5 kg and 1.0 kg. In addition, via hole reliability is determined by performing a T / C temperature cycle (a temperature change cycle between −55 ° C. and 125 ° C.) on the above semiconductor device and then changing the T / C when the conduction resistance value of the via hole changes by 20% from the initial value. The number of temperature cycles was measured. Table 1 shows the results.

[0046]

[Table 1]

As is clear from Table 1, Examples 1 to 3
Has a smaller amount of bending than Comparative Examples 1 to 3. Also,
In Comparative Examples 2 and 3, the via hole reliability was good at 1000 cycles, but in Examples 2 and 3, the via hole reliability was good even at 1500 cycles.

[0048]

As described above, the invention of claim 1 of the present invention provides a modified phenol by redistributing a high-molecular polyphenylene ether having a number average molecular weight of 10,000 to 30,000 and a phenolic compound in the presence of a radical initiator. A modified epoxy resin product in which a product is produced, and a phenolic hydroxyl group in the modified phenol product is reacted with an epoxy compound, an epoxy resin, a curing agent for the epoxy resin, and an average particle size of 0.1 to 10 μm silica powder,
An epoxy composition containing an aluminum hydroxide powder having an average particle size of 0.1 to 10 μm is cured to form a laminate, and a semiconductor chip is mounted on a core material formed from the laminate. The amount of bending of the core material can be reduced, and the thickness of the core material can be reduced to reduce the weight.

Further, according to the invention of claim 2 of the present invention, since the core material has via holes for signal transmission, by using a core material having a small thermal expansion and contraction, it is possible to prevent disconnection in the plating of the via holes. And the reliability of the via hole can be improved.

According to the third aspect of the present invention, since the core material has at least one build-up layer, the core material can be reinforced by the build-up layer, and the amount of bending can be further reduced. Things.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing an example of another embodiment of the above.

FIG. 3 is a sectional view showing an example of another embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 core material 2 semiconductor chip 3 via hole 4 build-up layer

Claims (3)

[Claims] 1. A number average molecular weight of 10,000 to 3000.
A polyphenolene ether and a phenolic compound in the presence of a radical initiator to produce a modified phenol product, and a modified epoxy obtained by reacting a phenolic hydroxyl group in the modified phenol product with an epoxy compound. Contains a resin product, an epoxy resin, a curing agent for the epoxy resin, silica powder having an average particle size of 0.1 to 10 μm, and aluminum hydroxide powder having an average particle size of 0.1 to 10 μm. A semiconductor device comprising: curing a cured epoxy composition to form a laminate; and mounting a semiconductor chip on a core material formed from the laminate. 2. The semiconductor device according to claim 1, wherein the semiconductor device is a core material having a via hole for signal transmission. 3. The semiconductor device according to claim 1, wherein the semiconductor device is a core material having at least one buildup layer.