JP2002352950A - 発光装置およびその作製方法 - Google Patents

発光装置およびその作製方法

Info

Publication number
JP2002352950A
JP2002352950A JP2002031539A JP2002031539A JP2002352950A JP 2002352950 A JP2002352950 A JP 2002352950A JP 2002031539 A JP2002031539 A JP 2002031539A JP 2002031539 A JP2002031539 A JP 2002031539A JP 2002352950 A JP2002352950 A JP 2002352950A
Authority
JP
Japan
Prior art keywords
insulating film
film
emitting device
light emitting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002031539A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002352950A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Junya Maruyama
純矢 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002031539A priority Critical patent/JP2002352950A/ja
Publication of JP2002352950A publication Critical patent/JP2002352950A/ja
Publication of JP2002352950A5 publication Critical patent/JP2002352950A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2002031539A 2001-02-07 2002-02-07 発光装置およびその作製方法 Withdrawn JP2002352950A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002031539A JP2002352950A (ja) 2001-02-07 2002-02-07 発光装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-31594 2001-02-07
JP2001031594 2001-02-07
JP2002031539A JP2002352950A (ja) 2001-02-07 2002-02-07 発光装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008102211A Division JP4777380B2 (ja) 2001-02-07 2008-04-10 発光装置

Publications (2)

Publication Number Publication Date
JP2002352950A true JP2002352950A (ja) 2002-12-06
JP2002352950A5 JP2002352950A5 (enExample) 2005-08-18

Family

ID=26609090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002031539A Withdrawn JP2002352950A (ja) 2001-02-07 2002-02-07 発光装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2002352950A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038837A (ja) * 2003-06-30 2005-02-10 Semiconductor Energy Lab Co Ltd 発光装置
JP2005071920A (ja) * 2003-08-27 2005-03-17 Akiyoshi Mikami 複合発光装置
JP2005215478A (ja) * 2004-01-30 2005-08-11 Seiko Epson Corp Ｔｆｔ基板とその製造方法、有機ｅｌ表示装置、並びに電子機器
JP2006201453A (ja) * 2005-01-20 2006-08-03 Mitsubishi Electric Corp 表示装置及びその製造方法
US7126270B2 (en) 2003-06-30 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Reflector for a light emitting device
JP2006303473A (ja) * 2005-03-25 2006-11-02 Semiconductor Energy Lab Co Ltd 発光素子、発光装置ならびに前記発光素子を用いた電気器具
JP2007184604A (ja) * 2006-01-05 2007-07-19 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
WO2007088813A1 (ja) * 2006-01-31 2007-08-09 Kyocera Corporation Ｅｌ装置
US7306978B2 (en) 2003-09-19 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing thereof
US7816863B2 (en) 2003-09-12 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US8476827B2 (en) 2005-03-25 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electric appliance using the same
JP2014220259A (ja) * 2008-07-10 2014-11-20 株式会社半導体エネルギー研究所 モジュール

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535170B2 (en) 2003-06-30 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having light reflector with plurality of openings
US7126270B2 (en) 2003-06-30 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Reflector for a light emitting device
JP2005038837A (ja) * 2003-06-30 2005-02-10 Semiconductor Energy Lab Co Ltd 発光装置
JP2005071920A (ja) * 2003-08-27 2005-03-17 Akiyoshi Mikami 複合発光装置
US8283862B2 (en) 2003-09-12 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US7816863B2 (en) 2003-09-12 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US7737449B2 (en) 2003-09-19 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Light emitting device and method of manufacturing thereof
US7306978B2 (en) 2003-09-19 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing thereof
JP2005215478A (ja) * 2004-01-30 2005-08-11 Seiko Epson Corp Ｔｆｔ基板とその製造方法、有機ｅｌ表示装置、並びに電子機器
JP2006201453A (ja) * 2005-01-20 2006-08-03 Mitsubishi Electric Corp 表示装置及びその製造方法
JP2006303473A (ja) * 2005-03-25 2006-11-02 Semiconductor Energy Lab Co Ltd 発光素子、発光装置ならびに前記発光素子を用いた電気器具
US8476827B2 (en) 2005-03-25 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electric appliance using the same
JP2007184604A (ja) * 2006-01-05 2007-07-19 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
US8383449B2 (en) 2006-01-05 2013-02-26 Samsung Display Co., Ltd. Method of forming a thin film transistor having openings formed therein
JP2007234572A (ja) * 2006-01-31 2007-09-13 Kyocera Corp Ｅｌ装置
WO2007088813A1 (ja) * 2006-01-31 2007-08-09 Kyocera Corporation Ｅｌ装置
US7977873B2 (en) 2006-01-31 2011-07-12 Kyocera Corporation Electroluminescent device having protective layers for sealing
JP2014220259A (ja) * 2008-07-10 2014-11-20 株式会社半導体エネルギー研究所 モジュール
US10079330B2 (en) 2008-07-10 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device having an embedded pixel electrode
US10205062B2 (en) 2008-07-10 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device that is highly reliable, thin and is not damaged by external local pressure and electronic device
US11101407B2 (en) 2008-07-10 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device sealed in a fibrous body to improve manufacturability and electronic device including the light emitting device
US11557697B2 (en) 2008-07-10 2023-01-17 Semiconductor Energy Laboratory Co., Ltd. Flexible light emitting device comprising a polyimide resin
US11908976B2 (en) 2008-07-10 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device

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