JP2002343828A - Package of electronic component and method of packaging it - Google Patents

Package of electronic component and method of packaging it

Info

Publication number
JP2002343828A
JP2002343828A JP2001141301A JP2001141301A JP2002343828A JP 2002343828 A JP2002343828 A JP 2002343828A JP 2001141301 A JP2001141301 A JP 2001141301A JP 2001141301 A JP2001141301 A JP 2001141301A JP 2002343828 A JP2002343828 A JP 2002343828A
Authority
JP
Japan
Prior art keywords
electric structure
melted
terminal
heating
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001141301A
Other languages
Japanese (ja)
Other versions
JP3450838B2 (en
Inventor
Tosaku Nishiyama
東作 西山
Tsutomu Mitani
力 三谷
Hiroteru Takezawa
弘輝 竹沢
Yukihiro Ishimaru
幸宏 石丸
Takashi Kitae
孝史 北江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001141301A priority Critical patent/JP3450838B2/en
Publication of JP2002343828A publication Critical patent/JP2002343828A/en
Application granted granted Critical
Publication of JP3450838B2 publication Critical patent/JP3450838B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/2901Shape
    • H01L2224/29011Shape comprising apertures or cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a package, which raises the reliability of the connection of a chip carrier with a mother board, also reduces the cost of the package and can maintain the early performance of a small-sized and lightweight consumer electronic equipment extending over a long period, and to provide a method of packaging an electronic component. SOLUTION: In a packaging body, conductive projections 6, which are melted by heating, are provided on the electrodes 5 on at least one side of electrodes 4 on a first electric structure 1 and electrodes 5 on a second electric structure 3, an insulative bonding resin layer 7 exists between the structures 1 and 3 to bond the projections 6 to the electrodes 4 and 5 and the electrodes 4 and 5 on the structures 1 and 3 are electrically connected with each other through the projections 6 with are melted by the heating.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品における
実装体とその方法、特に半導体素子の実装されたチップ
キャリア等の電子部品とマザーボードの実装構造体と実
装方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of an electronic component and a method thereof, and more particularly to a mounting structure and a mounting method of an electronic component such as a chip carrier on which a semiconductor element is mounted and a motherboard.

【0002】[0002]

【従来の技術】半導体装置の中にBGA(ボール・グリ
ッド・アレイ)パッケージやLGA(ランド・グリッド
・アレイ)パッケージというものが提案されている。こ
れらは、半導体装置を実装したチップキャリアの外部接
続電極がチップキャリアの裏面にグリッド状に配置され
てなる半導体装置である。
2. Description of the Related Art Among semiconductor devices, a BGA (ball grid array) package and an LGA (land grid array) package have been proposed. These are semiconductor devices in which external connection electrodes of a chip carrier on which a semiconductor device is mounted are arranged in a grid on the back surface of the chip carrier.

【0003】この実装されてなる半導体装置は、従来の
QFP(クォータ・フラット・パッケージ)に比べる
と、外部接続電極がパッケージの裏面にあるので半導体
装置のサイズが大幅に小型化されるという利点がある。
[0003] The mounted semiconductor device has an advantage that the size of the semiconductor device is greatly reduced as compared with the conventional QFP (quarter flat package) because the external connection electrodes are provided on the back surface of the package. is there.

【0004】このBGAやLGA構造のCSP(チップ
・サイズ・パッケージ)等のパッケージの電極ピッチ
は、従来1.27mmという大きさのものが主に用いら
れていたが、電子機器の小型軽量化に伴い、0.8mm
〜0.5mmピッチのものが用いられるようになってき
た。
Conventionally, the electrode pitch of a package such as a CSP (chip size package) having a BGA or LGA structure is mainly 1.27 mm. Accompanying, 0.8mm
Those having a pitch of 0.5 mm have come to be used.

【0005】これらのピッチの端子電極を持つパッケー
ジは通常はBGA、LGAといったように予め半田ボー
ルをパッケージに搭載しておき、それをリフロー炉等で
加熱し半田付けすることによりマザーボードとの接続を
行ったり、逆にマザーボード側に電極上に半田ペースト
を印刷し、その上にパッケージを位置決め搭載し、リフ
ロー炉等を用いて加熱し半田付けすることにより電気的
な接続を行っている。
In a package having terminal electrodes of these pitches, solder balls such as BGA and LGA are usually mounted on the package in advance, and the solder balls are heated in a reflow furnace or the like and soldered to establish connection with the motherboard. On the other hand, an electrical connection is made by printing a solder paste on an electrode on the motherboard side, positioning and mounting a package thereon, and heating and soldering using a reflow furnace or the like.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、このよ
うなBGA、LGAといった単に半田だけを接続に用い
た技術では、更なる狭ピッチ化には限界があることが分
かっている。例えば、半田は高温では非常に粘度が低く
なり流れやすくなるために、半田の量を多くすると電極
間でショートしたり、また、逆に半田の量が少ないと接
続できない電極が出てきたり、繰り返し加熱と冷却を繰
り返す、例えば、コンピュータのCPUに用いたりする
機器に用いた場合、初期的には電気的な接続がなされて
いても、繰り返し使用していくと接続が破壊して機器が
動作しなくなったりと、機器の信頼性にも悪影響を与え
ることが知られている。その理由は、主にチップやその
キャリア基板とマザーボードとの熱膨張係数の差によ
り、半田接続部にせん断応力がかかり、特に応力のかか
りやすい接続が不十分なところで、接続が物理的に破壊
するためであった。
However, it has been found that there is a limit to further narrowing the pitch by using a technique such as BGA or LGA that uses only solder for connection. For example, solder has a very low viscosity at high temperatures and tends to flow.Therefore, if the amount of solder is large, short-circuiting occurs between the electrodes, and if the amount of solder is small, electrodes that cannot be connected come out or repeat. When used in equipment that repeats heating and cooling, for example, used in the CPU of a computer, even if an electrical connection is initially established, repeated use breaks the connection and the equipment operates. It has been known that the disappearance also has an adverse effect on the reliability of the device. The reason is that mainly due to the difference in the coefficient of thermal expansion between the chip or its carrier substrate and the motherboard, a shear stress is applied to the solder connection part, and the connection is physically broken, especially where the stress-prone connection is insufficient. It was because.

【0007】その改善例として例えば特開平8−236
654号公報が提案されているが、これは特に直径が
0.5mm〜1mmの半田ボールを用いたキャリア基板
の接続端子側に、樹脂層を設けて半田ボールを固定する
ことにより、チップキャリアと半田ボールの接続界面に
加わるせん断応力を緩和させようとするものである。
As an example of the improvement, see, for example, JP-A-8-236.
Japanese Patent Application Publication No. 654 is proposed. In particular, a resin layer is provided on the connection terminal side of a carrier substrate using a solder ball having a diameter of 0.5 mm to 1 mm, and the solder ball is fixed. The purpose is to reduce the shear stress applied to the connection interface of the solder balls.

【0008】しかしながらこの方法では、更に狭ピッチ
に接続した場合、マザーボードとキャリア基板の半田接
続部の面積が小さくなるために、接続部に多大なせん断
応力がかかることが避けられず、小型の電子機器等に使
用した場合、マザーボード側の半田接続の部分でせん断
破壊を起こし、電子機器が機能しなくなることがあっ
た。また、一般的には半田ボール等で半田付け実装した
後にアンダーフィルと呼ばれる、チップキャリアとマザ
ーボード間を接着する封止樹脂材料を、キャリア基板と
マザーボード間に流し込むことが知られているが、この
方法は封止樹脂材料を流し込む手間がかかり、かつ、完
全に封止樹脂を流し込むことが困難な上に、封止樹脂材
料の硬化に多大な時間がかかり、コスト増大の一因とな
り、民生用の電子機器では採用を見送られることが多か
った。したがってこの技術は長期に渡って信頼性を要求
される民生用の安価な電子機器には使われず、主に高価
な業務用の機器に使われることが多かった。
However, according to this method, when the connection is made at a narrower pitch, the area of the solder connection portion between the mother board and the carrier substrate is reduced, so that a large shear stress is unavoidably applied to the connection portion, and a small electronic device is required. When used in devices, the electronic devices sometimes fail due to shear failure at the solder connection portion on the motherboard side. Also, it is known that a sealing resin material for bonding between a chip carrier and a motherboard, which is generally called underfill after soldering and mounting with solder balls or the like, is poured between the carrier substrate and the motherboard. The method takes time and trouble to pour the sealing resin material, and it is difficult to completely pour the sealing resin. In addition, it takes a lot of time to cure the sealing resin material, which causes a cost increase, and Electronic devices were often forgotten. Therefore, this technology has not been used for inexpensive consumer electronic devices requiring reliability over a long period of time, and has been often used mainly for expensive commercial devices.

【0009】本発明は、チップキャリアとマザー基板の
接続信頼性を向上するとともにコストを安価にし、民生
用の小型・軽量の電子機器を長期に渡って初期の性能を
維持できる実装体と実装方法を提供することを目的とす
る。
The present invention is directed to a mounting body and a mounting method capable of improving the reliability of connection between a chip carrier and a mother substrate and reducing the cost, and maintaining the initial performance of a small and lightweight consumer electronic device for a long period of time. The purpose is to provide.

【0010】[0010]

【課題を解決するための手段】前記目的を達成するた
め、本発明の第1番目の電子部品の実装体は、第1の電
気構造物と第2の電気構造物の電極のうち少なくとも一
方に加熱により溶融する導電性の突起を備え、前記第一
の電気構造物と第2の電気構造物間には絶縁性の接着樹
脂層が存在し、前記加熱により溶融する導電性の突起に
より第1の電気構造物および第2の電気構造物の電極が
電気的に接続されていることを特徴とする。
In order to achieve the above object, a first electronic component package according to the present invention is provided on at least one of electrodes of a first electric structure and a second electric structure. A conductive protrusion that is melted by heating; an insulating adhesive resin layer is present between the first electrical structure and the second electrical structure; And the electrodes of the second electric structure are electrically connected to each other.

【0011】次に本発明の第2番目の電子部品の実装体
は、第1の電気構造物と第2の電気構造物が、加熱によ
り溶融する導電性の突起を介して電気的に接続した実装
構造体であって、第1の電気構造物の端子電極と第2の
電気構造物の端子電極間には加熱すると溶融し硬化する
絶縁性の接着性の樹脂により接着されており、前記突起
電極の溶融温度が前記接着樹脂の溶融温度よりも高く、
前記絶縁性の接着樹脂が溶融し、硬化してから、前記導
電性の突起が溶融し硬化することにより第1の電気構造
物の端子電極および第2の電気構造物の端子電極が電気
的に接続されることを特徴とする。
Next, in the second electronic component package according to the present invention, the first electric structure and the second electric structure are electrically connected to each other through conductive protrusions which are melted by heating. A mounting structure, wherein a terminal electrode of the first electric structure and a terminal electrode of the second electric structure are bonded by an insulating adhesive resin which melts and hardens when heated; The melting temperature of the electrode is higher than the melting temperature of the adhesive resin,
After the insulating adhesive resin is melted and hardened, the conductive projections are melted and hardened, so that the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure are electrically connected. It is characterized by being connected.

【0012】次に本発明の第1番目の実装方法は、第1
の電気構造物の端子電極または第2の電気構造物の端子
電極の少なくとも一方に設けた加熱により溶融する導電
性の突起が溶融しない間に、前記第1の電気構造物の端
子電極とおよび第2の電気構造物の端子電極の間に設け
た加熱することにより溶融し硬化する絶縁性の樹脂が軟
化し、前記突起状の電極が前記絶縁性の樹脂を突き破り
第1の電気構造物の端子電極と第2の端子電極が接触
し、前記軟化した接着性の絶縁樹脂が硬化した後に、前
記突起状の電極が溶融、硬化し第1の電気構造物の端子
電極と第2の電気構造物の端子電極を接続されることを
特徴とする。
Next, the first mounting method of the present invention is the first mounting method.
While the conductive protrusion provided on at least one of the terminal electrode of the electric structure or the terminal electrode of the second electric structure is not melted by heating, the terminal electrode of the first electric structure and the terminal electrode of the second electric structure are not melted. The insulating resin which is provided between the terminal electrodes of the electric structure 2 and melted and hardened by heating is softened, and the protruding electrode breaks through the insulating resin and the terminal of the first electric structure. After the electrode and the second terminal electrode are in contact with each other and the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to form the terminal electrode of the first electric structure and the second electric structure. Are connected.

【0013】次に本発明の第2番目の実装方法は、第1
の電気構造物の端子電極または第2の電気構造物の端子
電極の少なくとも一方に設けた加熱により溶融する導電
性の突起が溶融しない間に、第1の電気構造物の端子電
極とおよび第2の電気構造物の端子電極の間に設けた加
熱することにより溶融し硬化する絶縁性の樹脂が軟化
し、前記導電性の突起が前記絶縁性の樹脂を突き破り第
1の電気構造物の端子電極と第2の端子電極が接触し、
前記軟化した接着性の絶縁樹脂が硬化した後に、前記突
起状の電極が溶融、硬化し第1の電気構造物の端子電極
と第2の電気構造物の端子電極を接続する際に、第1の
電気構造物と第2の電気構造物を、両者の間に加熱によ
り溶融するシート状の樹脂をはさみ位置決め固定し、加
熱装置で加熱することにより、第1の電気構造物の端子
電極と第2の電気構造物の端子電極を接続することを特
徴とする。
Next, the second mounting method of the present invention is the first mounting method.
While the conductive protrusion provided on at least one of the terminal electrode of the electric structure and the terminal electrode of the second electric structure is not melted by the heating, the terminal electrode of the first electric structure and the terminal electrode of the second electric structure are not melted. The insulating resin, which is provided between the terminal electrodes of the electric structure and is melted and hardened by heating, is softened, and the conductive protrusion breaks through the insulating resin, and the terminal electrode of the first electric structure. And the second terminal electrode contact,
After the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to connect the terminal electrode of the first electric structure and the terminal electrode of the second electric structure. The sheet-like resin which is melted by heating is sandwiched and fixed between the electric structure and the second electric structure, and is fixed and heated by a heating device. 2 is characterized by connecting the terminal electrodes of the electric structure.

【0014】次に本発明の第3番目の実装方法は、第1
の電気構造物の端子電極または第2の電気構造物の端子
電極の少なくとも一方に設けた加熱により溶融する導電
性の突起が溶融しない間に、第1の電気構造物の端子電
極とおよび第2の電気構造物の端子電極の間に設けた加
熱することにより溶融し硬化する絶縁性の樹脂が軟化
し、前記導電性の突起が前記絶縁性の樹脂を突き破り第
1の電気構造物の端子電極と第2の端子電極が接触し、
前記軟化した接着性の絶縁樹脂が硬化した後に、前記突
起状の電極が溶融、硬化し第1の電気構造物の端子電極
と第2の電気構造物の端子電極を接続される際に、第1
の電気構造物と第2の電気構造物を、両者のどちらか一
方の面に、加熱により溶融する樹脂を塗布により形成
し、前記第1の電気構造物の端子電極と第2電気構造物
の端子電極を位置決め固定し、加熱装置で加熱すること
により、第1の電気構造物の端子電極と第2の電気構造
物の端子電極を接続することを特徴とする。
Next, a third mounting method of the present invention is the first mounting method.
While the conductive protrusion provided on at least one of the terminal electrode of the electric structure and the terminal electrode of the second electric structure is not melted by the heating, the terminal electrode of the first electric structure and the terminal electrode of the second electric structure are not melted. The insulating resin, which is provided between the terminal electrodes of the electric structure and is melted and hardened by heating, is softened, and the conductive protrusion breaks through the insulating resin, and the terminal electrode of the first electric structure. And the second terminal electrode contact,
After the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to connect the terminal electrode of the first electric structure and the terminal electrode of the second electric structure. 1
Forming an electric structure and a second electric structure by applying a resin that is melted by heating to one of the two surfaces, and forming a terminal electrode of the first electric structure and a second electric structure. The terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure are connected by positioning and fixing the terminal electrodes and heating with a heating device.

【0015】次に本発明の第4番目の実装方法は、第1
の電気構造物の端子電極または第2の電気構造物の端子
電極の、少なくとも一方に設けた加熱により溶融する導
電性の突起が、溶融しない間に、第1の電気構造物の端
子電極とおよび第2の電気構造物の端子電極の間に設け
た加熱することにより溶融し硬化する絶縁性の樹脂が軟
化し、前記導電性の突起が前記絶縁性の樹脂を突き破り
第1の電気構造物の端子電極と第2の端子電極が接触
し、前記軟化した接着性の絶縁樹脂が硬化した後に、前
記突起状の電極が溶融、硬化し第1の電気構造物の端子
電極と第2の電気構造物の端子電極を接続す際に、第1
の電気構造物と第2の電気構造物を、両者の間に加熱に
より溶融する樹脂のシートをはさみ位置決め固定し、超
音波振動を与えて加熱することにより、第1の電気構造
物の端子電極と第2の電気構造物の端子電極を接続する
ことを特徴とする。
Next, the fourth mounting method of the present invention is the first mounting method.
The conductive protrusions provided on at least one of the terminal electrode of the electric structure or the terminal electrode of the second electric structure are melted by heating while the terminal is not melted. The insulating resin that is provided between the terminal electrodes of the second electric structure and melted and hardened by heating is softened, and the conductive protrusions break through the insulating resin to form the first electric structure. After the terminal electrode and the second terminal electrode are in contact with each other and the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to form a terminal electrode of the first electric structure and the second electric structure. When connecting the terminal electrodes of
The electric structure and the second electric structure are positioned and fixed by sandwiching a sheet of a resin that is melted by heating between the two, and heated by applying ultrasonic vibration to the terminal electrodes of the first electric structure. And a terminal electrode of the second electric structure.

【0016】[0016]

【発明の実施の形態】前記本発明の実装体においては、
接着樹脂層は加熱すると溶融し硬化する絶縁性の接着樹
脂層であり、前記突起電極の溶融温度が前記接着樹脂の
溶融温度よりも高いことが好ましい。リフロー工程での
温度バラツキ等の実際の工程要因を考慮に入れると、約
10℃以上溶融温度(融点)の差があることが好まし
い。
BEST MODE FOR CARRYING OUT THE INVENTION In the package of the present invention,
The adhesive resin layer is an insulating adhesive resin layer that melts and hardens when heated, and preferably has a melting temperature of the protruding electrode higher than a melting temperature of the adhesive resin. Taking into account actual process factors such as temperature variation in the reflow process, it is preferable that there is a difference in melting temperature (melting point) of about 10 ° C. or more.

【0017】また本発明の第1番目の実装方法において
は、第1の電気構造物と第2の電気構造物の両側から加
圧することにより、少なくとも一方の端子電極に設けた
導電性の突起が、加熱することにより溶融する絶縁性樹
脂を突き破る。これにより、第1の電気構造物と第2の
電気構造物との間の電気的導通がはかれる。
Further, in the first mounting method of the present invention, by applying pressure from both sides of the first electric structure and the second electric structure, the conductive projection provided on at least one terminal electrode is formed. Breaks through the insulating resin that is melted by heating. Thus, electrical continuity between the first electric structure and the second electric structure is established.

【0018】また本発明の第1番目の実装方法において
は、第1の電気構造物の端子電極上および第2の電気構
造物の端子電極上の少なくとも一方に設けた加熱により
溶融する導電性の突起が半田であることが好ましい。
Further, in the first mounting method of the present invention, the conductive material which is melted by heating provided on at least one of the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure. It is preferable that the projection is made of solder.

【0019】また本発明の第2番目の実装方法において
は、第1の電気構造物の端子電極と第2の電気構造物の
端子電極間にはさみ、両者の間で加熱により溶融するシ
ート状の樹脂の、第1の電気構造物の端子電極と第2の
電気構造物の端子電極のどちらか一方に設けた突起状の
電極部に予め穴が設けられていることが好ましい。
Further, in the second mounting method of the present invention, a sheet-like material which is sandwiched between the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure and which is melted by heating between the two. It is preferable that a hole is provided in advance in a protruding electrode portion of the resin provided on one of the terminal electrode of the first electric structure and the terminal electrode of the second electric structure.

【0020】また本発明の第2番目の実装方法において
は、前記穴の中に導電性ペーストが充填されていること
が好ましい。
In the second mounting method of the present invention, it is preferable that the hole is filled with a conductive paste.

【0021】また本発明の第3番目の実装方法において
は、加熱装置の加熱温度および時間が、第1段階として
加熱により溶融する樹脂シートが溶融、硬化する温度お
よび時間に設定されており、第2段階として導電性を有
する突起が溶融する温度に設定されていることが好まし
い。
In the third mounting method of the present invention, the heating temperature and time of the heating device are set to the temperature and time at which the resin sheet melted by heating is melted and hardened as the first step. It is preferable that the temperature is set to a temperature at which the conductive projection melts in two stages.

【0022】また本発明の第3番目の実装方法において
は、第1の電気構造物の端子電極またいは第2の電気構
造物の端子電極の少なくとも一方に設ける導電性の突起
が少なくとも一部に金、銀または銅を含んだ材料である
ことが好ましい。
Further, in the third mounting method of the present invention, the conductive protrusion provided on at least one of the terminal electrode of the first electric structure or the terminal electrode of the second electric structure is provided at least partially. It is preferable that the material contains gold, silver, or copper.

【0023】[0023]

【実施例】以下、本発明の実施例について図面を示しな
がら説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0024】(実施例1)本発明の第一の実施例の内容
を説明するための、実装構造体の実装前の断面図を図1
に示す。
(Embodiment 1) FIG. 1 is a sectional view of a mounting structure before mounting to explain the contents of a first embodiment of the present invention.
Shown in

【0025】第1の電気構造物としてはセラミックでで
きたインターポーザ2上にシリコンでできた半導体ベア
チップ1を搭載したCSPと、第2の電気構造物として
はマザーボード3がある。半導体ベアチップ1はセラミ
ックでできたインターポーザ2に電気的に接続かつ物理
的に固定、取り付けられており、インターポーザ端子電
極4には導電性バンプ6が設けられている。また、基板
3には基板端子電極5が設けられ、基板端子電極5以外
の部分にはソルダーレジスト8が設けられており、電気
的に短絡することを防止している。またインターポーザ
端子電極4の面にもソルダーレジスト8が設けられてお
り、電気的に短絡することが防止されている。導電性バ
ンプ6の設けられた半導体ベアチップ1を搭載したイン
ターポーザ2は、マザーボード3の基板端子電極5と位
置決めされて、荷重9により溶融接着シート7を介して
仮固定される。この際にこの溶融接着シートは若干のタ
ック性を有することが望ましい。溶融接着シート7の材
質としては、140℃程度の熱を加えると一旦溶融した
後、硬化するホットメルト型の熱硬化性樹脂の接着シー
ト等が使用される。また、導電性バンプ6は200℃程
度の加熱により溶融する金属、例えば鉛と錫の合金であ
る半田や、導電性接着剤等が用いられる。
A first electric structure includes a CSP having a semiconductor bare chip 1 made of silicon on an interposer 2 made of ceramic, and a motherboard 3 as a second electric structure. The semiconductor bare chip 1 is electrically connected and physically fixed and attached to an interposer 2 made of ceramic. The interposer terminal electrode 4 is provided with a conductive bump 6. Further, the substrate 3 is provided with the substrate terminal electrode 5, and a solder resist 8 is provided on a portion other than the substrate terminal electrode 5 to prevent an electrical short circuit. The solder resist 8 is also provided on the surface of the interposer terminal electrode 4 to prevent an electrical short circuit. The interposer 2 on which the semiconductor bare chip 1 provided with the conductive bumps 6 is mounted is positioned with the substrate terminal electrodes 5 of the motherboard 3 and is temporarily fixed by the load 9 via the fusion bonding sheet 7. At this time, it is desirable that the molten adhesive sheet has some tackiness. As a material of the molten adhesive sheet 7, a hot-melt type thermosetting resin adhesive sheet which once melts and is cured when heat of about 140 ° C. is applied is used. The conductive bump 6 is made of a metal that is melted by heating at about 200 ° C., for example, a solder made of an alloy of lead and tin, a conductive adhesive, or the like.

【0026】図1のように位置決め、仮固定された実装
前の構造体は、リフロー炉、加熱炉等に挿入され、ま
ず、溶融接着シート7の溶融する温度である例えば15
0℃まで加熱される。その際に溶融接着シート7は加熱
により溶融し、ほぼ液状となる。その際に導電性バンプ
6の付いたインターポーザ2はマザーボード3と接着さ
れると同時に、導電性バンプ6は接着シート7の中に自
重によりめり込み導電性バンプ6はマザーボード7の基
板端子電極5と接触する。その後150℃の温度を維持
すると約30秒ほどで溶融接着シートは硬化し始め、約
1分でほぼ硬化し、インターポーザ2とマザーボード3
は接着される。
The structure before mounting, which is positioned and temporarily fixed as shown in FIG. 1, is inserted into a reflow furnace, a heating furnace, or the like, and first, for example, at a temperature at which the molten adhesive sheet 7 is melted, for example, at 15 ° C.
Heat to 0 ° C. At that time, the molten adhesive sheet 7 is melted by heating and becomes almost liquid. At this time, the interposer 2 with the conductive bumps 6 is adhered to the motherboard 3, and at the same time, the conductive bumps 6 are sunk into the adhesive sheet 7 by its own weight, and the conductive bumps 6 contact the substrate terminal electrodes 5 of the motherboard 7. I do. Thereafter, when the temperature of 150 ° C. is maintained, the molten adhesive sheet starts to be cured in about 30 seconds, and is almost cured in about 1 minute, and the interposer 2 and the motherboard 3
Are glued.

【0027】図2は本実施例の実装構造体の実装後の断
面を示す。インターポーザ2とマザーボード3を接着し
た後、230℃まで加熱温度を上げると導電性バンプは
溶融し、図2に示すように、基板端子電極5とインター
ポーザ端子電極4は接続される。この際、溶融接着シー
トは、ほぼ完全に硬化しているために導電性バンプが溶
融し、隣接する端子電極まで広がることはない。その
後、温度を下げることにより、導電性バンプ6によりイ
ンターポーザ2とマザーボード3は完全に溶融接着シー
トが硬化接着され、物理的に強固に固定されるととも
に、電気的にも完全に接続される。
FIG. 2 shows a cross section of the mounting structure of this embodiment after mounting. When the heating temperature is increased to 230 ° C. after bonding the interposer 2 and the motherboard 3, the conductive bumps are melted, and the substrate terminal electrode 5 and the interposer terminal electrode 4 are connected as shown in FIG. At this time, since the fusion bonding sheet is almost completely cured, the conductive bumps are not melted and do not spread to the adjacent terminal electrodes. After that, by lowering the temperature, the interposer 2 and the motherboard 3 are completely cured and adhered to the interposer 2 and the motherboard 3 by the conductive bumps 6, and are physically and firmly fixed, and are also completely electrically connected.

【0028】本実施例では半導体ベアチップ1の搭載さ
れたインターポーザ2の自重により、インターポーザ2
とマザーボード3は接着されるが、例えばインターポー
ザ2とマザーボード3に適切な圧縮荷重を加えることに
より、より確実な導電性バンプ6と基板端子電極5およ
びインターポーザ端子電極4の接続がなされる。
In this embodiment, the weight of the interposer 2 on which the semiconductor bare chip 1 is mounted is
The mother board 3 and the mother board 3 are bonded to each other. For example, by applying an appropriate compressive load to the interposer 2 and the mother board 3, the conductive bump 6 is more securely connected to the board terminal electrode 5 and the interposer terminal electrode 4.

【0029】この実施例ではバンプを直径50μm、高
さ50μm、またそのピッチは250μmとした。
In this embodiment, the bumps have a diameter of 50 μm, a height of 50 μm, and a pitch of 250 μm.

【0030】上記のように作成したサンプルの、信頼性
試験を行った。信頼性試験としては (1)−40℃(30分)〜+125℃(30分)の気
相ヒートサイクル試験 (2)−55℃(5分)〜+150℃(5分)に液相ヒ
ートサイクル試験 を行い、評価方法としては接続部の抵抗値をモニター
し、初期の抵抗と比較して10%以上抵抗値が上がった
点を終点として、熱サイクルの負荷がかかった際の寿命
を求めた。結果は後にまとめて表1に示す。
A reliability test was performed on the sample prepared as described above. (1) Gas phase heat cycle test from -40 ° C (30 minutes) to + 125 ° C (30 minutes) (2) Liquid phase heat cycle from -55 ° C (5 minutes) to + 150 ° C (5 minutes) A test was performed, and as a method of evaluation, the resistance value of the connection was monitored, and the life when the load of the thermal cycle was applied was determined with the point at which the resistance value increased by 10% or more compared to the initial resistance as an end point. . The results are summarized in Table 1 below.

【0031】(実施例2)図3に本発明の第2の実施例
を説明するための、実装構造体の実装前の断面図を示
す。溶融接着シートに予め導電性バンプ6の接続用の穴
10を設けた以外は実施例1と基本的に同じである。こ
の溶融接着シート7に設けられた穴10は半導体ベアチ
ップ1の搭載されたインターポーザ2とマザーボード3
が位置決め固定される前にレーザ加工、パンチング、ド
リル加工等により設ける。
(Embodiment 2) FIG. 3 is a cross-sectional view of a mounting structure before mounting to explain a second embodiment of the present invention. Example 2 is basically the same as Example 1 except that holes 10 for connecting the conductive bumps 6 are provided in advance on the fusion bonding sheet. The hole 10 provided in the fusion bonding sheet 7 is provided between the interposer 2 on which the semiconductor bare chip 1 is mounted and the motherboard 3.
Is provided by laser processing, punching, drilling, etc., before positioning is fixed.

【0032】本実施例では穴10を開けた溶融接着シー
ト7をマザーボード3に貼りつけた後、半導体ベアチッ
プ1の搭載されたインターポーザ2を位置決め仮固定し
たが、溶融接着シート7をマザーボード3に貼りつけた
後、レーザ加工等により穴10を設けてもよい。
In this embodiment, the fusion bonding sheet 7 having the holes 10 formed thereon is bonded to the motherboard 3 and then the interposer 2 on which the semiconductor bare chip 1 is mounted is temporarily fixed, but the fusion bonding sheet 7 is bonded to the motherboard 3. After attaching, the hole 10 may be provided by laser processing or the like.

【0033】加熱条件等の製造の工程は実施例1と基本
的に同様であるが、溶融接着シート7に穴10が空いて
いることにより、導電性バンプ6を設けたインターポー
ザ2の位置決めが容易である。また、導電性バンプ6と
基板端子電極5間の接触がより確実なものとなる。
The manufacturing steps such as the heating conditions are basically the same as those in the first embodiment, but the holes 10 are formed in the molten adhesive sheet 7 so that the positioning of the interposer 2 provided with the conductive bumps 6 is easy. It is. Further, the contact between the conductive bumps 6 and the substrate terminal electrodes 5 becomes more reliable.

【0034】また、穴10に導電性ペーストを充填した
接着シート7を用いることにより、さらに信頼性の向上
を図ることが可能である。この場合の導電性ペーストと
しては、様々な種類のものが使用できるが、熱硬化性の
樹脂をバインダとして含んだものが好ましい。また、導
電性バンプと同様に融点が接着樹脂よりも好ましくは約
10℃以上高いことが望ましい。なお、この導電性ペー
ストとしては、ソルダーペースト等も使用できる。この
ように穴に導電性ペーストを充填することにより、接続
信頼性をさらに向上させることができ、接続寿命を約
1.5倍近くまで向上させることが可能となる。
Further, by using the adhesive sheet 7 in which the conductive paste is filled in the holes 10, it is possible to further improve the reliability. Although various kinds of conductive pastes can be used in this case, those containing a thermosetting resin as a binder are preferable. Also, like the conductive bump, it is desirable that the melting point is higher than that of the adhesive resin by about 10 ° C. or more. In addition, a solder paste or the like can be used as the conductive paste. By filling the holes with the conductive paste, the connection reliability can be further improved, and the connection life can be improved to about 1.5 times.

【0035】実施例1と同様に、実施例2で作成したサ
ンプルの、信頼性試験を行った。信頼性試験としては (1)−40℃(30分)〜+125℃(30分)の気
相ヒートサイクル試験 (2)−55℃(5分)〜+150℃(5分)に液相ヒ
ートサイクル試験 を行い、評価方法としては接続部の抵抗値をモニター
し、初期の抵抗と比較して10%以上抵抗値が上がった
点を終点として、熱サイクルの負荷がかかった際の寿命
を求めた。結果は後にまとめて表1に示す。
In the same manner as in Example 1, the sample prepared in Example 2 was subjected to a reliability test. (1) Gas phase heat cycle test from -40 ° C (30 minutes) to + 125 ° C (30 minutes) (2) Liquid phase heat cycle from -55 ° C (5 minutes) to + 150 ° C (5 minutes) A test was performed, and as a method of evaluation, the resistance value of the connection was monitored, and the life when the load of the thermal cycle was applied was determined with the point at which the resistance value increased by 10% or more compared to the initial resistance as an end point. . The results are summarized in Table 1 below.

【0036】(比較例1)比較のために、信頼性を維持
する上で、構造上不利な、従来の実装構造体の例につい
て説明する。半導体ベアチップ1の搭載されたインター
ポーザ2は、マザーボード3と半田ボール11を介して
基板端子電極5およびインターポーザ端子電極4の間で
電気的に接続され、また物理的に固定されている。
Comparative Example 1 For comparison, a description will be given of an example of a conventional mounting structure that is structurally disadvantageous in maintaining reliability. The interposer 2 on which the semiconductor bare chip 1 is mounted is electrically connected between the board terminal electrodes 5 and the interposer terminal electrodes 4 via the motherboard 3 and the solder balls 11 and is physically fixed.

【0037】製造方法は、予め半田ボールを半導体ベア
チップ1を搭載したインターポーザ2のインターポーザ
端子電極4に仮接着しておき、それをマザーボード3上
に位置決め仮固定し、リフロー炉等で半田の溶融する温
度である、230℃付近まで加熱し、半田を溶融させ、
接続を行う。
In the manufacturing method, a solder ball is temporarily bonded in advance to the interposer terminal electrode 4 of the interposer 2 on which the semiconductor bare chip 1 is mounted, and the solder ball is temporarily fixed on the mother board 3 and the solder is melted in a reflow furnace or the like. Heat to a temperature of around 230 ° C, melt the solder,
Make a connection.

【0038】実施例1と同様に、比較例で作成したサン
プルの、信頼性試験を行った。信頼性試験としては (1)−40℃(30分)〜+125℃(30分)の気
相ヒートサイクル試験 (2)−55℃(5分)〜+150℃(5分)に液相ヒ
ートサイクル試験 を行い、評価方法としては接続部の抵抗値をモニター
し、初期の抵抗と比較して10%以上抵抗値が上がった
点を終点として、熱サイクルの負荷がかかった際の寿命
を求めた。信頼性試験の結果をまとめて表1に示す。
In the same manner as in Example 1, a reliability test was performed on the sample prepared in Comparative Example. (1) Gas phase heat cycle test from -40 ° C (30 minutes) to + 125 ° C (30 minutes) (2) Liquid phase heat cycle from -55 ° C (5 minutes) to + 150 ° C (5 minutes) A test was performed, and as a method of evaluation, the resistance value of the connection was monitored, and the life when the load of the thermal cycle was applied was determined with the point at which the resistance value increased by 10% or more compared to the initial resistance as an end point. . Table 1 summarizes the results of the reliability tests.

【0039】[0039]

【表1】 [Table 1]

【0040】本発明の構成である、実施例1および、実
施例2はいずれの試験も終点が2000サイクル以上で
あるのに対して、比較例はいずれの試験も1000サイ
クル以下で終点を迎えている。したがって本発明の実施
例にて作成したサンプルは長寿命である。
In Examples 1 and 2, which are the constitutions of the present invention, the end points of all the tests were 2,000 cycles or more, whereas the comparative examples reached the end points of 1,000 cycles or less. I have. Therefore, the sample prepared in the embodiment of the present invention has a long life.

【0041】本実施例では半導体ベアチップを搭載する
インターポーザとして、セラミックでできたものを用い
たが、樹脂でできたインターポーザを用いた場合も同様
に終点は2000サイクル以上となり、信頼性が極めて
高いことが確認された。
In this embodiment, an interposer made of ceramic is used as an interposer for mounting a semiconductor bare chip. However, when an interposer made of resin is used, the end point is also 2000 cycles or more, and the reliability is extremely high. Was confirmed.

【0042】以上のように本発明の実施例では非常に簡
単な工程で、極めて信頼性の高い狭ピッチな実装が可能
となり、特に他のSMD(表面実装部品)部品と同じ工
程で同時にCSP等の能動部品も実装可能なため、安価
で簡単に電子機器を製造することができその効果は極め
て大きい。
As described above, in the embodiment of the present invention, a very reliable and narrow pitch mounting becomes possible with a very simple process. In particular, the CSP and the like are simultaneously performed in the same process as other SMD (surface mounting component) components. Since the active components can also be mounted, electronic devices can be manufactured easily at low cost and the effect is extremely large.

【0043】なおこの溶融接着シートは適度に可撓性を
有することが望ましい。そのため本実施例では適度な可
撓性を有するシート材料を用いた。
It is desirable that the melted adhesive sheet has an appropriate flexibility. Therefore, in this embodiment, a sheet material having appropriate flexibility was used.

【0044】また、半導体ベアチップからインターポー
ザを通じてマザーボードへの放熱のため、シート材料に
熱伝導性フィラーを入れる等の工夫をすることにより、
高速で動作するMPU等の実装用等、更に用途が拡大す
る。
In order to radiate heat from the semiconductor bare chip to the motherboard through the interposer, a heat conductive filler may be added to the sheet material to improve heat dissipation.
Applications for mounting MPUs and the like that operate at high speed are further expanded.

【0045】また、このような熱伝導性フィラーを入れ
た樹脂材料を用いた場合でも、信頼性試験の終点は20
00サイクル以上を確保でき、セラミックや樹脂を用い
たインターポーザと同様に信頼性が高いことを確認し
た。
Even when a resin material containing such a thermally conductive filler is used, the end point of the reliability test is 20 points.
It was confirmed that 00 cycles or more could be secured, and the reliability was high as in the case of an interposer using ceramic or resin.

【0046】なお、実施例では、実装構造体として、イ
ンターポーザ上にベアチップの搭載された半導体装置を
ガラスエポキシ基板へ実装する場合のみを示したが、他
の表面実装部品やパッケージ部品等のプリント基板への
実装にも適用できることは明白である。またC4等のベ
アチップ実装にも適用できる。また、複数のフレキ、リ
ジッド基板等の接続にも利用できる。
In this embodiment, only the case where a semiconductor device having a bare chip mounted on an interposer is mounted on a glass epoxy substrate as a mounting structure is described, but other printed circuit boards such as surface mount components and package components are mounted. Obviously, it can also be applied to implementations on. Further, the present invention can also be applied to bare chip mounting such as C4. It can also be used to connect a plurality of flexible and rigid substrates.

【0047】[0047]

【発明の効果】本発明によれば、極めて簡単な工程で、
非常に信頼性の高い狭ピッチな実装が可能となり、特に
他のSMD(表面実装部品)部品と同じ工程で同時にC
SP等の能動部品も実装可能なため、安価で簡単に超小
型の携帯用電子機器等を製造することができ、その効果
は極めて大きい。
According to the present invention, in a very simple process,
Very reliable and narrow pitch mounting is possible, especially in the same process as other SMD (Surface Mounted Parts) components.
Since active components such as SPs can also be mounted, ultra-small portable electronic devices and the like can be manufactured at low cost and easily, and the effect is extremely large.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例の実装構造体の実装前の
断面図
FIG. 1 is a sectional view of a mounting structure according to a first embodiment of the present invention before mounting.

【図2】本発明の第1および第2の実施例の実装構造体
の実装後の断面図
FIG. 2 is a sectional view of the mounting structure according to the first and second embodiments of the present invention after mounting.

【図3】本発明の第2の実施例の実装構造体の実装前の
断面図
FIG. 3 is a sectional view of a mounting structure according to a second embodiment of the present invention before mounting.

【図4】比較例を説明するための実装構造体の実装後の
側面図
FIG. 4 is a side view after mounting of a mounting structure for explaining a comparative example;

【符号の説明】[Explanation of symbols]

1 半導体ベアチップ(シリコン) 2 インターポーザ(セラミック又は樹脂) 3 マザーボード 4 インターポーザ端子電極 5 基板端子電極 6 導電性バンプ 7 溶融接着シート 8 ソルダーレジスト 9 荷重 10 穴 11 半田ボール Reference Signs List 1 semiconductor bare chip (silicon) 2 interposer (ceramic or resin) 3 motherboard 4 interposer terminal electrode 5 substrate terminal electrode 6 conductive bump 7 fusion bonding sheet 8 solder resist 9 load 10 hole 11 solder ball

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/34 507 (72)発明者 竹沢 弘輝 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 石丸 幸宏 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 北江 孝史 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 4M109 AA01 BA03 CA22 EA11 5E319 AA03 AA07 AB05 AC01 BB04 BB20 CC12 CC33 CD13 GG01 GG15 5F044 KK17 KK18 LL05 LL11 QQ02 QQ03 5F061 AA01 BA03 CA22 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification FI FI Theme Court II (Reference) H05K 3/34 507 (72) Inventor Hiroki Takezawa 1006 Kadoma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. ( 72) Inventor Yukihiro Ishimaru 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. EA11 5E319 AA03 AA07 AB05 AC01 BB04 BB20 CC12 CC33 CD13 GG01 GG15 5F044 KK17 KK18 LL05 LL11 QQ02 QQ03 5F061 AA01 BA03 CA22

Claims (13)

【特許請求の範囲】[Claims] 【請求項1】第1の電気構造物と第2の電気構造物の電
極のうち少なくとも一方に加熱により溶融する導電性の
突起を備え、 前記第一の電気構造物と第2の電気構造物間には絶縁性
の接着樹脂層が存在し、 前記加熱により溶融する導電性の突起により第1の電気
構造物および第2の電気構造物の電極が電気的に接続さ
れていることを特徴とする電子部品の実装体。
1. An electrode for a first electric structure and an electrode of a second electric structure, wherein at least one of the electrodes has a conductive protrusion that is melted by heating, and the first electric structure and the second electric structure are provided. An insulating adhesive resin layer exists between the electrodes, and the electrodes of the first electric structure and the second electric structure are electrically connected by the conductive protrusions that are melted by the heating. Electronic components mounted.
【請求項2】前記接着樹脂層は加熱すると溶融し硬化す
る絶縁性の接着樹脂層であり、前記突起電極の溶融温度
が前記接着樹脂の溶融温度よりも高い請求項1に記載の
電子部品の実装体。
2. The electronic component according to claim 1, wherein the adhesive resin layer is an insulating adhesive resin layer that melts and hardens when heated, and a melting temperature of the protruding electrode is higher than a melting temperature of the adhesive resin. Implementation body.
【請求項3】第1の電気構造物と第2の電気構造物が、
加熱により溶融する導電性の突起を介して電気的に接続
した実装構造体であって、 第1の電気構造物の端子電極と第2の電気構造物の端子
電極間には加熱すると溶融し硬化する絶縁性の接着性の
樹脂により接着されており、前記突起電極の溶融温度が
前記接着樹脂の溶融温度よりも高く、 前記絶縁性の接着樹脂が溶融し、硬化してから、前記導
電性の突起が溶融し硬化することにより第1の電気構造
物の端子電極および第2の電気構造物の端子電極が電気
的に接続されることを特徴とする電子部品の実装体。
3. The first electric structure and the second electric structure,
A mounting structure electrically connected via conductive protrusions that are melted by heating, wherein the space between the terminal electrode of the first electric structure and the terminal electrode of the second electric structure is melted and cured when heated. The melting temperature of the protruding electrode is higher than the melting temperature of the adhesive resin, and the insulating adhesive resin is melted and hardened before the conductive A mounting body for an electronic component, wherein the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure are electrically connected by melting and curing the projections.
【請求項4】第1の電気構造物の端子電極または第2の
電気構造物の端子電極の少なくとも一方に設けた加熱に
より溶融する導電性の突起が溶融しない間に、前記第1
の電気構造物の端子電極とおよび第2の電気構造物の端
子電極の間に設けた加熱することにより溶融し硬化する
絶縁性の樹脂が軟化し、前記突起状の電極が前記絶縁性
の樹脂を突き破り第1の電気構造物の端子電極と第2の
端子電極が接触し、前記軟化した接着性の絶縁樹脂が硬
化した後に、前記突起状の電極が溶融、硬化し第1の電
気構造物の端子電極と第2の電気構造物の端子電極を接
続されることを特徴とする電子部品の実装方法。
4. The method according to claim 1, wherein the conductive projections provided on at least one of the terminal electrode of the first electric structure and the terminal electrode of the second electric structure which are melted by heating do not melt.
The insulating resin which is provided between the terminal electrode of the electric structure and the terminal electrode of the second electric structure and which is melted and cured by heating is softened, and the protruding electrode is formed of the insulating resin. After the terminal electrode of the first electric structure comes into contact with the second terminal electrode and the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to form the first electric structure. Wherein the terminal electrode of the second electric structure is connected to the terminal electrode of the second electric structure.
【請求項5】第1の電気構造物と第2の電気構造物の両
側から加圧することにより、少なくとも一方の端子電極
に設けた導電性の突起が、加熱することにより溶融する
絶縁性樹脂を突き破る請求項4に記載の電子部品の実装
方法。
5. An electrically conductive projection provided on at least one terminal electrode by applying pressure from both sides of the first electric structure and the second electric structure, thereby forming an insulating resin which is melted by heating. The method for mounting an electronic component according to claim 4, wherein the electronic component is pierced.
【請求項6】第1の電気構造物の端子電極上および第2
の電気構造物の端子電極上の少なくとも一方に設けた加
熱により溶融する導電性の突起が半田である請求項4に
記載の電子部品の実装方法。
6. The method according to claim 6, further comprising the steps of:
5. The electronic component mounting method according to claim 4, wherein the conductive protrusion which is provided on at least one of the terminal electrodes of the electric structure and is melted by heating is solder.
【請求項7】第1の電気構造物の端子電極または第2の
電気構造物の端子電極の少なくとも一方に設けた加熱に
より溶融する導電性の突起が溶融しない間に、第1の電
気構造物の端子電極とおよび第2の電気構造物の端子電
極の間に設けた加熱することにより溶融し硬化する絶縁
性の樹脂が軟化し、前記導電性の突起が前記絶縁性の樹
脂を突き破り第1の電気構造物の端子電極と第2の端子
電極が接触し、前記軟化した接着性の絶縁樹脂が硬化し
た後に、前記突起状の電極が溶融、硬化し第1の電気構
造物の端子電極と第2の電気構造物の端子電極を接続す
る際に、第1の電気構造物と第2の電気構造物を、両者
の間に加熱により溶融するシート状の樹脂をはさみ位置
決め固定し、加熱装置で加熱することにより、第1の電
気構造物の端子電極と第2の電気構造物の端子電極を接
続することを特徴とする電子部品の実装方法。
7. The first electric structure while at least one of the terminal protrusions of the first electric structure and the terminal electrodes of the second electric structure is not melted by the conductive protrusions which are melted by heating. The insulating resin, which is provided between the terminal electrode of the second electric structure and the terminal electrode of the second electric structure and is melted and cured by heating, is softened, and the conductive protrusions pierce the insulating resin to form the first resin. After the terminal electrode of the electric structure and the second terminal electrode are in contact with each other and the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to be in contact with the terminal electrode of the first electric structure. When connecting the terminal electrodes of the second electric structure, the first electric structure and the second electric structure are positioned and fixed by sandwiching a sheet-like resin which is melted by heating between the two. By heating the first electric structure. When mounting method of electronic components, characterized by connecting the terminal electrodes of the second electric structure.
【請求項8】第1の電気構造物の端子電極と第2の電気
構造物の端子電極間にはさみ、両者の間で加熱により溶
融するシート状の樹脂の、第1の電気構造物の端子電極
と第2の電気構造物の端子電極のどちらか一方に設けた
突起状の電極部に予め穴が設けられている請求項7に記
載の電子部品の実装方法。
8. A terminal of the first electric structure made of a sheet-like resin sandwiched between the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure and melted by heating between the two. 8. The electronic component mounting method according to claim 7, wherein a hole is provided in advance in a protruding electrode portion provided on one of the electrode and the terminal electrode of the second electric structure.
【請求項9】第1の電気構造物の端子電極と第2の電気
構造物の端子電極間にはさみ、両者の間で加熱により溶
融するシート状の樹脂の、第1の電気構造物の端子電極
と第2の電気構造物の端子電極のどちらか一方に設けた
突起状の電極部に予め穴が設けられ、前記穴の中に導電
性ペーストが充填されている請求項7に記載の電子部品
の実装方法。
9. A terminal of the first electric structure, which is sandwiched between the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure, and is made of a sheet-like resin which is melted by heating between the two. 8. The electronic device according to claim 7, wherein a hole is provided in a protruding electrode portion provided on one of the electrode and the terminal electrode of the second electric structure, and the hole is filled with a conductive paste. Component mounting method.
【請求項10】第1の電気構造物の端子電極または第2
の電気構造物の端子電極の少なくとも一方に設けた加熱
により溶融する導電性の突起が溶融しない間に、第1の
電気構造物の端子電極とおよび第2の電気構造物の端子
電極の間に設けた加熱することにより溶融し硬化する絶
縁性の樹脂が軟化し、前記導電性の突起が前記絶縁性の
樹脂を突き破り第1の電気構造物の端子電極と第2の端
子電極が接触し、前記軟化した接着性の絶縁樹脂が硬化
した後に、前記突起状の電極が溶融、硬化し第1の電気
構造物の端子電極と第2の電気構造物の端子電極を接続
される際に、第1の電気構造物と第2の電気構造物を、
両者のどちらか一方の面に、加熱により溶融する樹脂を
塗布により形成し、前記第1の電気構造物の端子電極と
第2電気構造物の端子電極を位置決め固定し、加熱装置
で加熱することにより、第1の電気構造物の端子電極と
第2の電気構造物の端子電極を接続することを特徴とす
る電子部品の実装方法。
10. The terminal electrode of the first electric structure or the second electrode.
Between the terminal electrode of the first electric structure and the terminal electrode of the second electric structure, while the conductive projection provided on at least one of the terminal electrodes of the electric structure does not melt. The provided insulating resin that is melted and hardened by heating is softened, the conductive protrusions pierce the insulating resin, and the terminal electrode of the first electric structure comes into contact with the second terminal electrode, After the softened adhesive insulating resin is cured, the protruding electrode is melted and cured to connect the terminal electrode of the first electric structure and the terminal electrode of the second electric structure. The first electrical structure and the second electrical structure,
Forming a resin that is melted by heating on one of the two surfaces by coating, positioning and fixing the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure, and heating with a heating device. A terminal electrode of the first electric structure and a terminal electrode of the second electric structure.
【請求項11】加熱装置の加熱温度および時間が、第1
段階として加熱により溶融する樹脂シートが溶融、硬化
する温度および時間に設定されており、第2段階として
導電性を有する突起が溶融する温度に設定されている請
求項10に記載の電子部品の実装方法。
11. The heating temperature and time of the heating device are set to the first
The mounting of the electronic component according to claim 10, wherein a temperature and a time at which the resin sheet melted by heating is melted and hardened as a step are set, and a temperature at which the conductive protrusions are melted is set as a second step. Method.
【請求項12】第1の電気構造物の端子電極またいは第
2の電気構造物の端子電極の少なくとも一方に設ける導
電性の突起が少なくとも一部に金、銀または銅を含んだ
材料である請求項10に記載の電子部品の実装方法。
12. A conductive projection provided on at least one of the terminal electrode of the first electric structure or the terminal electrode of the second electric structure is a material containing at least a part of gold, silver or copper. A method for mounting an electronic component according to claim 10.
【請求項13】第1の電気構造物の端子電極または第2
の電気構造物の端子電極の、少なくとも一方に設けた加
熱により溶融する導電性の突起が、溶融しない間に、第
1の電気構造物の端子電極とおよび第2の電気構造物の
端子電極の間に設けた加熱することにより溶融し硬化す
る絶縁性の樹脂が軟化し、前記導電性の突起が前記絶縁
性の樹脂を突き破り第1の電気構造物の端子電極と第2
の端子電極が接触し、前記軟化した接着性の絶縁樹脂が
硬化した後に、前記突起状の電極が溶融、硬化し第1の
電気構造物の端子電極と第2の電気構造物の端子電極を
接続す際に、第1の電気構造物と第2の電気構造物を、
両者の間に加熱により溶融する樹脂のシートをはさみ位
置決め固定し、超音波振動を与えて加熱することによ
り、第1の電気構造物の端子電極と第2の電気構造物の
端子電極を接続することを特徴とする電子部品の実装体
の実装方法。
13. The terminal of the first electric structure or the second electrode.
While the conductive projections provided on at least one of the terminal electrodes of the electric structure are melted by heating, the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure are not melted. The insulating resin that is melted and hardened by heating provided therebetween is softened, and the conductive protrusion breaks through the insulating resin, and the terminal electrode of the first electric structure and the second terminal are connected to each other.
After the terminal electrodes contact and the softened adhesive insulating resin is cured, the protruding electrodes are melted and cured, and the terminal electrodes of the first electric structure and the terminal electrodes of the second electric structure are separated. When connecting, the first electrical structure and the second electrical structure,
A resin sheet that is melted by heating is sandwiched and fixed between the two, and the terminal electrode of the first electric structure is connected to the terminal electrode of the second electric structure by heating by applying ultrasonic vibration. A mounting method of a mounted body of an electronic component, characterized in that:
JP2001141301A 2001-05-11 2001-05-11 Manufacturing method of electronic component package Expired - Fee Related JP3450838B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081602A1 (en) * 2004-02-24 2005-09-01 Matsushita Electric Industrial Co., Ltd. Electronic component mounting method, and circuit board and circuit board unit used therein
US7520791B2 (en) 2004-01-21 2009-04-21 Canon Kabushiki Kaisha Method of manufacturing airtight vessel for image displaying apparatus
JP2009295811A (en) * 2008-06-05 2009-12-17 Hallys Corp Interposer bonding method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7520791B2 (en) 2004-01-21 2009-04-21 Canon Kabushiki Kaisha Method of manufacturing airtight vessel for image displaying apparatus
WO2005081602A1 (en) * 2004-02-24 2005-09-01 Matsushita Electric Industrial Co., Ltd. Electronic component mounting method, and circuit board and circuit board unit used therein
JP2009295811A (en) * 2008-06-05 2009-12-17 Hallys Corp Interposer bonding method

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