JP2002343753A - Simulation method and apparatus thereof, machining apparatus, machining system, and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately obtain desired film thickness distribution at a surface side to be machined of an object to be machined. SOLUTION: A preparation system 4 obtains the distribution of a target amount of polishing based on the film thickness of a wafer 2 measured by a measuring unit 3, assumes a control program for controlling a polishing apparatus 1, and predicts the distribution of the amount of polishing obtained after the wafer 2 is polished by the polishing apparatus 1 according to the assumed control program. At this time, the amount of polishing in a partial region is predicted with contact relative speed between the partial region of the surface to be machined of the wafer 2 and a polishing body 14 as one parameter, and at the same time with an index for indicating macro contact relative speed on a contact surface including the partial region as the other parameter. The preparation system 4 compares the distribution of the predicted amount of polishing with that of target one, thus judging the quality of the assumed control program. The polishing apparatus polishes the wafer 2 according to a conforming control program.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a simulation method and apparatus relating to polishing and other processing, a processing apparatus,
The present invention relates to a processing system and a semiconductor device manufacturing method.

[0002] The present invention relates to a method of manufacturing a semiconductor device such as an ULSI, for example, in a method of flattening and polishing a semiconductor device (for example, in forming a semiconductor element, a semiconductor wafer or a dielectric layer or a metal layer formed thereon). It is suitable for use in connection with the removal step) and the like.

[0003]

2. Description of the Related Art High density semiconductor devices have continued to evolve without showing any limitations.
Methods are being developed. One of them is a multilayer wiring, and technical problems associated with this include flattening a global (relatively large area) device surface and wiring between upper and lower layers.

[0004] Considering the reduction in the depth of focus at the time of exposure accompanying the shortening of the wavelength of lithography, there is a great demand for the accuracy of flattening the interlayer at least in the range of the exposure area. In addition, the requirement for so-called inlay (plug, damascene) for embedding a metal electrode layer is also large for realizing a multilayer wiring. In this case, it is necessary to remove and flatten an excessive metal layer after lamination. An attractive technique for efficient planarization of these large areas (at the die size level) is chemical mechanical polishing. This is because CMP (Ch
This is a polishing process called emical mechanical polishing (Planarization). CMP is a promising candidate for global planarization and electrode formation technology, in a process of removing the surface layer of a wafer by using chemical polishing in combination with physical polishing. Specifically, an appropriate tool is used by using an abrasive called a slurry in which abrasive grains (in general, silica, alumina, cerium oxide, etc.) are dispersed in a soluble solvent of the abrasive, such as an acid, an alkali, and an oxidizing agent. (A polishing body such as a polishing pad such as a polishing cloth) pressurizes the wafer surface, and rubs by relative motion to advance polishing.

[0005] This process has many problems as a device process technology. Among them, there are problems such as a large consumption of slurry and pads, and an increase in the size of the apparatus accompanying an increase in the wafer diameter. As a measure for solving these problems, a small-diameter pad method has been proposed in which polishing is performed while scanning the wafer surface with a pad smaller than the wafer. In this method, polishing with a small pad facilitates high-speed, low-load polishing, and flatness (ability to eliminate steps)
In addition, it is possible to solve the problem of the conventional apparatus that the polishing is not sufficient, and also has the advantage that the polishing process monitor (end point detection) can be easily performed because the polishing can be performed while a part of the wafer surface is always exposed. The ability to eliminate a step refers to a rate of selectively removing only the convex portions on the surface having irregularities.

In the completion of the CMP step, the remaining film state (thickness) needs to be uniform over the entire surface of the wafer. For this reason, in CMP, the importance of high-speed, low-load polishing, which is very effective in reducing erosion and dishing, is increasing.

On the other hand, in order to improve the process efficiency of the CMP polishing process and improve the accuracy of flatness, the polishing amount is accurately predicted, and the polishing conditions (control parameters of the polishing apparatus, etc.) are efficiently determined based on the predicted result. ) Is extremely important. Thus, for example, US Pat.
No. 9,423 also proposes a simulation relating to CMP.

[0008] Also, in polishing other than CMP, for example, polishing of optical members such as lenses, and general polishing such as grinding of wafers, the importance of simulation regarding polishing has been recognized. Has been proposed.

[0009]

In a simulation relating to polishing, prediction of a polishing amount is the basis. In various simulations related to polishing conventionally provided, the polishing amount is predicted by the following equation (1).
According to Preston's formula.
In Equation 1, h is the polishing amount (processing amount) of the polishing target (workpiece), η is the Preston constant, P is the load (pressure applied to the polishing target), and V is the relative contact between the tool and the polishing target. The speed (the contact relative speed of the partial region where the polishing amount is to be obtained) and t is the polishing time (processing time).

[0010]

H = ηPVt

The Preston's equation is an empirical rule, but it is said that the polishing amount can be obtained with very high accuracy, and is treated as a basic principle, and is the basis of any simulation related to polishing. Was. According to the Preston's formula of Equation 1, the polishing amount h of each partial region of the surface to be processed is, when the processing time t is constant,
If the contact relative speed V and the load P in the area are the same,
The magnitude of the macro relative contact speed of the contact surface between the work surface including the region and the tool (if the relative contact speed of the surrounding region is large even if the relative contact speed of the region is the same, the macro of the contact surface Should be constant regardless of the relative contact velocity.)

However, as a result of research conducted by the present inventor, contrary to such general technical knowledge, when the relative macroscopic contact speed between the workpiece surface and the tool is relatively small, the polishing amount is calculated by Preston's formula. Although it can be accurately predicted, when the macroscopic contact relative speed between the work surface and the tool is relatively large, the contact relative speed V, the load P, and the processing time t in a certain region of the work surface are the same. However, it was found that the actual amount of polishing greatly deviated from the amount of polishing obtained by Preston's equation. That is, the present inventor
It has been found that when the object to be polished is polished under a condition of high speed and low load, which has very great merits, the accuracy of the simulation of the polished amount is reduced, and this point is experimentally confirmed. As described above, when the accuracy of the simulation of the polishing amount is reduced, it becomes difficult to efficiently optimize the polishing conditions (control parameters of the polishing apparatus, etc.), and the process efficiency of the CMP polishing process can be improved. At the same time, the accuracy of the flatness decreases.

The situation described above applies not only to CMP but also to other polishing such as polishing of optical members such as lenses. In addition, the same applies to various processes such as grinding and abrasive grain processing, as long as the process involves friction, even if it is a process other than polishing.

The present invention has been made in view of the above circumstances, and a simulation method and apparatus capable of accurately predicting a processing amount distribution of a processing surface of a workpiece after polishing or other processing. The purpose is to provide.

Another object of the present invention is to provide a processing apparatus capable of accurately obtaining a desired surface shape of a processing surface of a workpiece or a desired film thickness distribution on the processing surface side.

Further, according to the present invention, a desired surface shape of a surface to be processed of a workpiece or a desired film thickness distribution on a surface to be processed can be obtained with high accuracy, and the efficiency of the processing step can be improved. An object of the present invention is to provide a processing system that can perform the processing.

Further, the present invention provides a method for manufacturing a semiconductor device, which can improve the process efficiency and improve the yield, and can manufacture a semiconductor device at a lower cost than a conventional semiconductor device manufacturing method. The purpose is to do.

[0018]

In this specification, the following means (1) to (33) are used as means for solving the above-mentioned problems.
Simulation method and apparatus related to machining, method and apparatus for creating control program for controlling machining apparatus, simulation program recording medium related to machining, program recording medium for creating control program, machining method and apparatus, machining A system, a semiconductor device manufacturing method, and a semiconductor device are disclosed.

The processing referred to in the present specification includes, in addition to polishing, grinding, and other types of abrasive processing, various other processing involving friction.

(1) The tool and the workpiece are relatively moved while applying a load between the tool and the workpiece, so that the workpiece is machined. In the simulation method for predicting the distribution of the amount of machining of a surface to be machined, for each partial region of the surface to be machined of the object, the machining amount of the partial region after machining the object to be machined, The contact relative speed with the tool as one of the parameters, and, the contact surface between the work surface and the tool, the contact surface including the partial area, an index indicating a macro contact relative speed, A simulation method characterized by predicting a machining amount of the partial area as another parameter.

(2) The index is a maximum value, a minimum value, or an average value of the relative contact speed over substantially the entire surface of the contact surface, or the rotation of at least one of the tool and the workpiece. The simulation method according to (1), wherein the number is a number.

(3) The processing of the workpiece is a chemical mechanical polishing performed by interposing an abrasive between the tool and the workpiece. 2) The simulation method described.

(4) As the relationship between the index and the processing amount of the partial area, the material constituting the workpiece of the workpiece, the type of the abrasive, and the material constituting the processing surface of the tool are provided. The simulation method according to the above (3), wherein a relationship determined according to at least one of the above and the structure is used.

(5) The tool and the workpiece are relatively moved while a load is applied between the tool and the workpiece, so that the workpiece is machined. In a simulation method for predicting a shape of a processing surface or a film thickness distribution on the processing surface side, the method according to any one of (1) to (1),
A simulation method, wherein the shape or the film thickness distribution of the workpiece is predicted using the simulation method according to any one of (4).

(6) A processing device for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece. A method for creating a control parameter or a control program, comprising: a measurement result of a shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side; and Based on the desired shape of the processing surface or the desired film thickness distribution on the processing surface side, the processing amount distribution of the processing surface required to obtain the desired shape or the desired film thickness distribution A step of obtaining a certain target machining amount distribution, an assumption step of assuming the control parameter or control program, and a control assumed in the estimation step using the simulation method according to any one of (1) to (5). Parameter or control A simulation step of predicting a processing amount distribution of the processing surface obtained after the processing object is processed by the processing apparatus according to a control program; a processing amount distribution predicted in the simulation step; and the target processing amount distribution. A determination step of determining whether the control parameter or the control program assumed in the assumption step is good or not by comparing the control step with the control step.

(7) If it is determined to be no in the determination step, the control parameters or the control program assumed in the assumption step are changed at least partially from those already assumed, and The method according to (6), wherein the assuming step, the simulation step, and the determination step are repeated in this order.

(8) The tool and the workpiece are relatively moved while applying a load between the tool and the workpiece, so that the workpiece is machined. In the simulation device for predicting the distribution of the processing amount of the processing surface, for each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece, the partial region, The contact relative speed with the tool as one of the parameters, and, the contact surface between the work surface and the tool, the contact surface including the partial area, an index indicating a macro contact relative speed, A simulation apparatus comprising, as another parameter, a prediction unit that predicts a processing amount of the partial region.

(9) The index is a maximum value, a minimum value, or an average value of the relative contact speed over substantially the entire surface of the contact surface, or the rotation of at least one of the tool and the workpiece. The simulation device according to (8), wherein the number is a number.

(10) The processing of the workpiece is chemical mechanical polishing performed by interposing an abrasive between the tool and the workpiece. 9) The simulation device according to the above.

(11) As the relationship between the index and the amount of processing of the partial area, the material forming the workpiece of the workpiece, the type of the abrasive, and the material forming the processing surface of the tool And (10) using a relationship determined according to at least one of the following:
The simulation device according to the above.

(12) The tool and the workpiece are relatively moved while applying a load between the tool and the workpiece, so that the workpiece is machined. In a simulation apparatus for predicting a shape of a work surface or a film thickness distribution on the work surface side, the above (1) to (1)
The shape or the film thickness distribution of the workpiece is determined by using the simulation method according to any one of (5) and the simulation apparatus according to any one of (8) to (11). A simulation device comprising a prediction unit for predicting.

(13) A processing device for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece. A creation device that creates a control parameter or a control program, the measurement result of a shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side, and a measurement result of the workpiece. Based on the desired shape of the processing surface or the desired film thickness distribution on the processing surface side, the processing amount distribution of the processing surface required to obtain the desired shape or the desired film thickness distribution Means for obtaining a certain target machining amount distribution, assuming means for assuming the control parameter or control program, and using the simulation method according to any one of (1) to (5), or
(12) The amount of processing of the processing surface obtained after the processing of the workpiece by the processing apparatus according to the control parameter or control program assumed by the assumption means, using the simulation apparatus according to any of (12). Simulation means for predicting the distribution, and comparing the machining amount distribution predicted by the simulation means with the target machining amount distribution to determine whether the control parameter or control program assumed by the estimating means is good or bad. And a means.

(14) In the case where the determination means makes a negative determination, the control parameters or the control program assumed by the assumption means are changed at least in part from those already assumed, and Assumed means,
The creation device according to (13), wherein the simulation unit and the determination unit include a unit that repeats the order in this order.

(15) While applying a load between the tool and the workpiece, the tool and the workpiece are relatively moved, so that the workpiece is processed using a processing apparatus for processing the workpiece. In the method for processing a workpiece, the method (6)
Or the control parameter or control program created by the creation method according to (7), or the above (1) to
(5) A machining method for machining the workpiece by operating the machining device according to a control parameter or a control program created by using the simulation method according to any one of (5) and (5).

(16) In a processing apparatus for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece, Or the control parameter or control program created by the creation method described in (7), or the control parameter or control program created by using the simulation method described in any of (1) to (5) above. A processing apparatus for processing a workpiece.

(17) The processing according to (16), wherein the processing of the workpiece is chemical mechanical polishing performed while an abrasive is interposed between the tool and the workpiece. Processing equipment.

(18) The processing according to (16) or (1), wherein the processing is performed under a condition that a part of the workpiece is not in contact with the tool for at least a certain time during the processing.
7) The processing apparatus according to the above.

(19) The processing apparatus according to any one of (16) to (18), wherein the diameter of the tool is smaller than that of the workpiece.

(20) The machining apparatus according to any one of (16) to (18), wherein the diameter of the tool is substantially the same as or larger than the workpiece.

(21) When the index indicating the macro contact relative speed of the contact surface between the workpiece surface and the tool is not set as one of the parameters, the accuracy of machining amount prediction is reduced. The processing apparatus according to any one of (16) to (20), wherein the processing is performed.

(22) Processing is performed under processing conditions in which the average value of the relative contact speed over substantially the entire contact surface between the workpiece surface and the tool during normal operation is 100 m / min or more. (16) to (2)
The processing device according to any one of 1). During the normal operation,
This is an operation except for near the rising period after the start of the operation and near the falling period before the end of the operation.

(23) The contact portion of the tool with the surface to be processed has a shape such that a portion where the relative speed of contact with the surface to be processed is reduced is removed. (16) The processing apparatus according to any one of (22) to (22).

(24) The tool according to (16) to (16), wherein a shape of a contact portion of the tool with the surface to be processed is a shape obtained by removing a portion near a rotation center of the tool.
The processing apparatus according to any one of (23).

(25) The tool and the workpiece are relatively moved while applying a load between the tool and the workpiece, so that the workpiece is processed and then the workpiece is processed. A computer-readable recording medium that records a program for causing a computer to execute a simulation function of predicting a processing amount distribution of a processing surface, wherein the simulation function is an individual processing surface of the processing target. For the partial area, the machining amount of the partial area after processing the workpiece, the relative speed of contact between the partial area and the tool as one of the parameters, and,
The index indicating the macro relative contact speed of the contact surface including the partial region, which is the contact surface between the workpiece surface and the tool, is used as another parameter to predict the machining amount of the partial region. A computer-readable recording medium, comprising:

(26) By relatively moving the tool and the workpiece while applying a load between the tool and the workpiece, the processing of the workpiece after the processing of the workpiece is performed. A computer-readable recording medium storing a program for causing a computer to implement a simulation function for predicting a shape of a processing surface or a film thickness distribution on the processing surface side, wherein the simulation function includes the processing For each partial region of the workpiece surface of the workpiece, the processing amount of the partial region after processing the workpiece, the contact relative speed between the partial region and the tool as one of the parameters, and, An index indicating a macro relative contact speed of a contact surface between the work surface and the tool and including the partial region is used as another parameter as a parameter of the partial region. Including the ability to predict workload,
A computer-readable recording medium characterized by the above-mentioned.

(27) A tool for processing the workpiece by controlling the relative movement between the tool and the workpiece while applying a load between the tool and the workpiece. A computer-readable recording medium storing a program for causing a computer to execute a creation process for creating a control parameter or a control program, wherein the creation process includes: (a) the workpiece before or after machining; Based on the measurement result of the shape of the surface to be processed or the film thickness distribution on the surface to be processed, and the desired shape of the surface to be processed of the workpiece or the desired film thickness distribution on the surface to be processed,
A step of obtaining a target processing amount distribution which is a processing amount distribution of the surface to be processed necessary to obtain the desired shape or the desired film thickness distribution; and (b) an assuming step of assuming the control parameter or control program. (C) a simulation step of predicting a machining amount distribution of the work surface obtained after the work is machined by the machining apparatus according to the control parameter or control program assumed in the estimation step; d) comparing the machining amount distribution predicted in the simulation step with the target machining amount distribution to determine whether the control parameter or the control program assumed in the assumption step is good or not, The simulation step includes, for each partial region of the processing surface of the workpiece, processing the partial region after processing the workpiece. The contact relative speed between the partial area and the tool as one of the parameters, and the macroscopic relative contact between the contact surface between the workpiece surface and the tool and including the partial area. A computer-readable recording medium, including a step of predicting a processing amount of the partial region using an index indicating a speed as another parameter.

(28) In the creation process, when it is determined that the control parameter or control program is not determined in the determination step, at least a part of a control parameter or a control program assumed in the assumption step is changed from the control parameter or control program that has already been assumed. The computer-readable recording medium according to (27), wherein the assumption step, the simulation step, and the determination step are repeated in this order.

(29) A processing device for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece; A measuring device that measures the shape of the processed surface of the workpiece or the film thickness distribution on the processed surface side, and a creating device that creates a control parameter or a control program for controlling the processing device, A processing system provided with: (a) a measurement result of the shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side by the measurement device; And obtaining the desired shape or the desired film thickness distribution on the basis of the desired shape of the processed surface of the work or the desired film thickness distribution on the processed surface side input by the input unit. Required for the machining surface distribution Means for obtaining a certain target machining amount distribution; (b) means for assuming the control parameter or control program; and (c) using the simulation method according to any of the above (1) to (5), or ,
The simulation device according to any one of (8) to (12), wherein the workpiece obtained after the workpiece is processed by the processing device in accordance with the control parameter or control program assumed by the assumption means. A simulation means for predicting a machining amount distribution of a machining surface,
(D) comparing the machining amount distribution predicted by the simulation means with the target machining amount distribution to determine whether the control parameter or control program assumed by the estimating means is good or not, The processing device processes the workpiece according to the control parameter or control program created by the creation device.
A processing system characterized by the following.

(30) The input of the measurement result from the measuring device to the creating device and the input of the control parameter or control program created by the creating device to the processing device are automatically or instructed. The processing system according to (29), wherein the processing is performed in response.

(31) The process (29) or (29), wherein the processing of the workpiece is chemical mechanical polishing performed while an abrasive is interposed between the tool and the workpiece. 30) The processing system according to the above.

(32) The processing apparatus according to any one of the above (16) to (24) or the processing apparatus according to the above (29) to (31)
A method of manufacturing a semiconductor device, comprising: flattening a surface of a semiconductor wafer using the processing system according to any one of the above.

(33) A semiconductor device manufactured by the semiconductor device manufacturing method according to (32).

As will be described in detail later, according to experiments by the inventor, when the macroscopic relative contact speed between the work surface of the work and the tool is relatively high, the partial area of the work surface is Even if the contact relative speed, load and processing time are the same,
It has been found that the actual processing amount greatly deviates from the processing amount obtained by Preston's equation. That is, taking the case of polishing a wafer as an example, when the wafer is polished at a considerably higher rotational speed than the condition of the normal polishing method, the polishing amount / contact relative speed is low regardless of the position of the wafer. It was observed that it was smaller compared to when rotating. Under the condition that the rotation speeds of the wafer (workpiece) and the polishing pad (tool) are increased, the proportional value (= polishing amount / contact relative speed) between the contact relative speed and the polishing amount shifts. It was found that the same effect as when the load was reduced was obtained. Mechanically, it is considered that a phenomenon called a hydroplane, in which a liquid film is formed between contacting objects during high-speed movement and friction is reduced, is involved.

In the simulation method (1),
In accordance with this phenomenon, not only is the contact relative speed between the partial region and the tool one of the parameters, but also the contact surface between the workpiece surface and the tool and the contact surface including the partial region,
The processing amount of the partial region is predicted using the index indicating the macro relative contact speed as another parameter.
Therefore, according to the simulation method (1), even if the macroscopic relative speed of contact between the workpiece surface and the tool is relatively large, it is possible to accurately predict the machining amount distribution of the workpiece surface.

It should be noted that, specifically, for example, the amount of processing of each region of the surface to be processed may be calculated by correcting the load actually applied according to the index. At this time, a relational expression (or a relational look-up table) between the index and the effective load (corrected load) is determined in advance by an experiment or the like, and is set by using this. May be calculated.

The above (2) is an example of an index indicating the macro relative contact speed of the contact surface, but the index is not necessarily limited to these examples. In general, when performing machining using rotation, using the rotation speed of at least one of the tool and the workpiece as a parameter, the maximum value of the contact relative speed over substantially the entire contact surface, This is almost the same as considering the minimum value or the average value as a parameter.

The simulation methods (1) and (2) can be applied not only to CMP but also to polishing of lenses and other various processes, but are suitable for CMP as described in (3). Can be applied to

Even if the materials listed in the above (4) are changed,
When the macro relative contact speed of the contact surface changes, the point at which the machining amount changes is the same, but the degree of the change may change depending on the factors exemplified in the above (4). For this reason, by using the relationship between the amount of processing and the macro contact relative speed of the contact surface determined according to such factors, it is possible to more accurately predict the distribution of the amount of processing.

According to the simulation method (5), since the simulation method according to any one of the above (1) to (4) is used, the macro relative contact speed between the workpiece surface and the tool is relatively small. Even if it is large, the shape of the work surface of the work or the film thickness distribution on the work surface side can be accurately predicted.

According to the production method of (6), the distribution of the amount of machining of the surface of the object to be machined obtained by the assumed control parameters or control program is determined by the method of (1) to (1).
The prediction is performed using any one of the simulation methods (5). Therefore, because this prediction is more accurate,
It is possible to efficiently optimize processing conditions (such as control parameters of the processing apparatus). As a result, the process efficiency as a whole can be improved, and the desired shape or the desired shape of the surface to be processed can be obtained by operating the processing apparatus in accordance with the control parameters or the control program created by the method (6). A desired film thickness distribution on the surface to be processed can be obtained with high accuracy. For example, when applied to CMP, high flatness can be ensured.

The control parameter or control program corresponds to, for example, a machining program in an NC machine tool, and its format may be appropriately determined depending on the machining device used.

According to the production method of (7), when the judgment is negative in the judgment step, the three steps are repeated while changing the assumed control parameter or control program, so that the processing conditions can be more efficiently obtained. Can be optimized.

According to the apparatuses (8) to (14), the simulation methods or the preparation methods (1) to (7) can be realized respectively.

According to the processing method (15), since the control parameters or the control program created based on the accurate prediction result are used, the desired surface shape of the processing surface of the workpiece or the processing surface side The desired film thickness distribution can be accurately obtained.

According to the processing apparatus of the above (16), the processing method of the above (15) is realized, and the desired surface shape of the processed surface of the workpiece or the desired film thickness distribution on the processed surface side is obtained. It can be obtained with high accuracy.

The processing apparatus of the above (16) can be applied not only to CMP but also to polishing of lenses and other various processing.
It can be suitably applied to MP.

For example, when the entire surface of the surface to be processed of a workpiece such as a wafer is always brought into contact with a tool such as a polishing body, and both are rotated in the same direction at the same rotation speed (constant speed forward), the processing is performed. Since the average contact relative speed for one rotation is constant over the entire surface to be processed of the workpiece, uniform polishing can be achieved by keeping the pressure constant over the entire surface.

However, in practice, a uniform processing amount is often not realized due to various influences (such as wafer warpage and holding method). Further, in some cases, it is required that the processing amount is not uniform over the entire surface in consideration of the initial film thickness difference of the film to be processed.

In this regard, as in the processing apparatus of the above (18), if a part of the workpiece is processed at least for a certain period of time during the processing without being in contact with the tool, This is preferable because a uniform processing amount can be obtained over the entire surface to be processed of the workpiece.

The processing apparatus of (18) can be achieved, for example, by employing a so-called small pad system which will be described later, or by using a so-called large pad system to allow a tool to protrude from a workpiece. Can also be achieved by

As in the processing apparatus of the above (19), the CMP
If a method called a small pad is adopted in the above, in addition to the advantage obtained by the processing device of (18),
Since it is possible to reduce the size of the device and to perform processing in which a part of the processing surface of the workpiece is always exposed,
Processing step monitoring (end point detection) can be performed easily. Not only that, high-speed and low-load processing is facilitated, and the flatness (the ability to eliminate a step) can be increased. And even if it speeds up, the above-mentioned advantage by the prediction accuracy of the processing amount by simulation being high can be obtained. That is, according to the aspect (19), while sufficiently obtaining the advantages of the conventionally recognized small pad system, the adverse effects associated with the high speed operation are eliminated, and an extremely great advantage is obtained.

As described above, it is preferable to use the small pad method. However, as in the processing apparatus (20), a method called a large pad in CMP may be used. Even in the large pad system, the advantage of speeding up is great, and the simulation accuracy is also increased, and the advantage by that is also obtained.

In the case of a processing apparatus that performs processing under a high-speed processing condition, the prediction of the processing amount by the Preston's equation of Equation 1 greatly deviates from the actual processing amount. In particular, the accuracy of predicting the machining amount is significantly improved. In particular, when processing is performed under processing conditions in which the contact relative speed over substantially the entire contact surface during normal operation is 100 m / min or more, as in the processing apparatus of (22), the prediction accuracy of the processing amount is low. It will be greatly improved.

Then, even when the contact relative speed is large,
If it is possible to perform control by accurately predicting the machining amount, it is very advantageous in terms of machining characteristics. Explaining by taking CMP polishing as an example, generally, as a cause of deteriorating the flatness (stepping degree) in CMP polishing, a soft pad of a tool follows irregularities on a wafer surface, and a concave portion is also polished. It is said that it will be lost. As a measure for suppressing this and improving the flatness (the degree of eliminating the step), hardening the pad and reducing the load have been considered. However, as will be described in detail later, the experiment of the present inventor has been conducted. As a result, it was confirmed that polishing at a high contact relative speed was very effective. Under the condition of high contact speed, the effect of increasing the polishing rate cannot always be expected, but a sufficient effect can be obtained in flatness which is important in CMP. This is considered to be due to a combination of a decrease in pressure on the wafer surface due to a phenomenon in which the pad is lifted, and an increase in the hardness of the pad during high-speed rotation.

The present inventor has further found that such an effective load is reduced, that is, the phenomenon that a tool pad or the like "floats" can be positively promoted. When this phenomenon is promoted, for example, the flatness (degree of level difference removal) in CMP polishing can be further improved. One of the measures for promoting this is to devise the shape of the contact portion (pad or the like) of the tool as in the processing device of (23). Specifically, for example, as in the processing device of (24), a hollow shape such as a donut shape can positively promote the “floating” phenomenon. It is considered that this is because the pad is lifted by being dragged toward the pad peripheral portion where the speed is relatively high.

The recording media (25) to (28) can be used to realize the methods (1) and (5) to (7), respectively. Note that the programs recorded on these recording media can be distributed on a transmission medium such as the Internet. Here, (25)
(28) A program having the same content as the program recorded on the recording medium of (28) and a transmission medium characterized by transmitting the program are disclosed.

According to the processing system of (29), since the measuring device, the preparation device, and the processing device constitute a processing system as a whole, the preparation and processing of measurement, control parameters, and the like can be performed consistently. As a result, the efficiency of the processing steps as a whole can be improved.

According to the machining system of (30), the input of the measurement result and the input of the control parameter or the control program are performed automatically or in response to the command, so that the burden on the operator can be reduced. it can. In the processing system (30), measurement, creation of control parameters, and processing can be completely automated as a whole.

The processing system of (29) and (30) can be applied not only to CMP but also to polishing of lenses and other various processing, but as in the processing system of (31), It can be suitably applied to CMP.

According to the semiconductor device manufacturing method (32), the process efficiency can be improved and the yield is improved. Therefore, the semiconductor device can be manufactured at lower cost than the conventional semiconductor device manufacturing method. it can.

According to the semiconductor device of (33),
A low-cost semiconductor device can be provided.

In the simulation methods (1) to (5), when at least the contact relative speed of the partial region is equal to or higher than a predetermined speed, the processing amount of the partial region increases as the contact relative speed increases. It is more accurate to predict the processing amount of the partial area according to a relationship in which the amount of increase increases continuously or stepwise and the amount of increase gradually or gradually decreases, or a relationship approximately equivalent to this relationship. This is preferable for better predicting the distribution of the processing amount on the surface to be processed.

Similarly, in the simulation apparatus of (8) to (12), when the contact relative speed of at least the partial region is equal to or higher than a predetermined speed, the predicting means determines whether or not the contact relative speed increases. The processing amount of the partial region is predicted according to a relationship in which the processing amount of the partial region gradually or stepwise increases while the increase amount continuously or gradually decreases, or a relationship substantially equivalent to this relationship. It is preferable to perform the processing amount distribution of the processed surface with higher accuracy.

[0084]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a simulation method and apparatus relating to machining according to the present invention, a method and apparatus for creating a control program for controlling a machining apparatus, a simulation program recording medium relating to machining, and a program for creating a control program and the like will be described. A program recording medium, a processing method and apparatus, a processing system, a semiconductor device manufacturing method, and a semiconductor device will be described with reference to the drawings.

In each of the embodiments described below, a simulation method and apparatus, a processing method and apparatus, and a processing system (that is, a simulation method and apparatus for CMP, a polishing method, Method and apparatus, polishing system). However, the present invention can be applied to a simulation method and an apparatus, a processing method and an apparatus, a processing system, and the like for other polishing, grinding, other abrasive processing, and other various processing. It goes without saying that the embodiment can be appropriately modified according to the desired processing content.

[Experimental results and principle of the present invention]

Prior to the description of the embodiments of the present invention, the results of experiments conducted by the present inventors, which are the basis of the present invention, and the principles of the present invention derived therefrom will be described.

The present inventor formed a predetermined film on the surface to be polished by using a tool (polishing member) as an annular tool using a small pad type CMP polishing apparatus similar to the polishing apparatus shown in FIG. The wafer was polished, and the polished amount (processed amount) of each part of the polished wafer was measured. At this time, the wafer is fixed without rotating, and only the tool is rotated at 100 rpm and 200 rpm.
The amount of polishing at each position of the wafer was measured for each of the cases where the tool was rotated at rpm, 300 rpm, and 500 rpm, respectively, and the tool was rotated at each rotation speed. Conditions other than the rotation speed of the tool were the same. The tool was not rocked (reciprocated). The contact relative speed at each position on the wafer is
It was determined by calculation from the position and the tool rotation speed. FIG. 8 shows the results of this experiment.

As can be seen from the experimental results shown in FIG. 8, when the wafer is polished at a considerably higher rotation speed than the condition of the ordinary polishing method, the polishing amount / contact relative speed becomes irrespective of the position of the wafer. It becomes smaller than at low rotation. Under the condition that the rotation speed of the wafer (workpiece) and the polishing pad (tool) is increased, a proportional value (=
(Amount of polishing / relative speed of contact) is shifted, that is, the same effect as when the load applied to the entire wafer is reduced is obtained. As described above, even at a position where the relative contact speed on the wafer is the same, if the number of rotations of the tool (corresponding to an index indicating the macroscopic relative contact speed of the contact surface) is different, the polishing amount at that position is reduced. different.

Therefore, according to such a phenomenon,
For each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece, the relative speed of contact between the partial region and the tool as one of the parameters, and An index indicating the macro contact relative speed of the contact surface between the work surface and the tool and including the partial area (for example, the maximum value of the contact relative speed over substantially the entire contact surface) , The minimum value or the average value, or the rotation speed of at least one of the tool and the workpiece) as another parameter, and when the processing amount of the partial area is predicted, , It is possible to improve the accuracy of the prediction of the distribution of the machining amount. This is the basic principle of the present invention.

Specifically, for example, the amount of machining of each region of the surface to be machined may be calculated by correcting the actually applied load according to the index. At this time, a relational expression (or a relational look-up table) between the index and the effective load (corrected load) is determined in advance by an experiment or the like, and is set by using this. May be calculated. That is, for example, in the above-mentioned Preston's equation of Equation 1, instead of the actual load P, the effective load P ′ obtained by using the relational expression or the look-up table from the index is applied. May be calculated according to an equation in which is replaced by the effective load P ′.

Further, from the experimental results shown in FIG. 9 obtained by the experiment conducted by the present inventors, in order to improve the flatness (degree of eliminating steps) in CMP polishing or the like, polishing is performed at a high contact relative speed. That proved to be very effective.

The experimental results shown in FIG. 9 were obtained by using a tool (polishing member) using a CMP polishing apparatus of the small pad type (pad diameter is about ／ of the wafer diameter) similar to the polishing apparatus shown in FIG. Was used as an annular tool, and a wafer having a step of the dielectric film was polished, and the residual step of the polished wafer was measured. In this experiment, not only the tool was rotated, but also the tool was oscillated (reciprocated) appropriately, and the wafer was rotated in a direction opposite to the tool. 3 tool rotations each
The residual step was measured for each of the cases of 00 rpm, 500 rpm, and 700 rpm. Conditions other than the tool rotation speed were the same.

In FIG. 9, the horizontal axis represents the amount of polishing of the convex portion, and the vertical axis represents the remaining step. When the step is ideally eliminated, only the convex portion is selectively polished, so that the data is along a straight line having a slope of 1 shown in FIG. 9. You are doing it. From FIG. 9, it can be seen that the higher the tool rotation speed, that is, the higher the macro relative contact speed, the better the flatness.

[Other experimental results, etc.]

Incidentally, a paper entitled “Swinging Polishing in Single Wafer Type Apparatus (1st Report) —Processing Shape During High-Speed Polishing” by Une et al. (P. .9, issued September 25, 2000), when the relative contact velocity V is relatively low, the polishing amount can be accurately predicted by the Preston's equation, but the polishing amount is to be calculated. It is reported that when the relative contact speed V of the region exceeds 0.04 km / min, the actual polishing amount of the partial region deviates from the polishing amount obtained by Preston's equation.

In the above-mentioned paper, the following relationship was corrected in order to correct the relationship between the contact relative speed of the partial region for which the polishing amount was to be obtained and the polishing amount of the partial region to the actual relationship obtained in the experiment. It has been proposed to introduce equation (2).

[0098]

Vc = f (1-Exp [-gV])

In Expression 2, Vc is the contact relative speed after correction, V is the contact relative speed before correction, and f and g are constants.
When the unit of Vc and V is [km / min], f = 0.0
8, g = 15.

The following equation 3 is obtained by replacing V in equation 1 with Vc in equation 2 in equation 1. Therefore, Expression 3 approximates the actual relationship between the relative contact speed of the partial region for which the polishing amount is to be obtained and the polishing amount of the partial region.

[0101]

H = ηP [f (1-Exp [−gV])] t

As reported in the article,
If the relative contact speed of the partial region for which the polishing amount is to be obtained is relatively high, the actual polishing amount of the partial region deviates from the polishing amount obtained by the Preston's formula. Therefore, when the object to be polished is polished under the conditions of high speed and low load, which are very advantageous in the CMP, the prediction accuracy of the polishing amount is improved by the above-described principle of the present invention, but the present invention has a problem. Polishing is performed because of a phenomenon different from the phenomenon (change in the polishing amount due to the macroscopic relative contact speed) (the saturation relationship between the contact relative speed of the partial region for which the polishing amount is to be calculated and the polishing amount of the partial region). The accuracy of predicting the quantity is reduced.

In the above-mentioned paper, as described above, if the correction formula of Equation 2 is introduced, even if the contact relative speed of the partial region for which the polishing amount is to be obtained is high, the calculated polishing amount is the experimental polishing amount. It is reported that there is a good agreement with this.

The present inventor conducted an experiment similar to the experiment disclosed in the above-mentioned paper, and obtained the experimental results shown in FIG. In this experiment, a small pad type CMP polishing apparatus similar to the polishing apparatus shown in FIG. 1 described later was used, the slurry was made of silica-based SS25, and the tool (polishing member) was made a disk tool. The same measurement as in the experiment disclosed in the above article was performed by polishing the same wafer as in the experiment. However, in order to know the state under higher speed conditions, the wafer was not rotated, but the tool was rotated at 500 rpm and polished. In FIG. 10, the polishing amount (corrected predicted polishing amount) calculated according to the above-described equation (3) is also indicated by a solid line.

In the case of FIG. 10 as well, as in the content disclosed in the above-mentioned article, the actual polishing amount of the partial region is saturated with the increase of the relative contact speed of the partial region for which the polishing amount is to be obtained. (The phenomenon that as the contact relative speed increases, the actual polishing amount gradually increases and the increase gradually decreases). And FIG.
Even in the case of 0, the polishing amount (processing amount) calculated according to the correction formula of the above equation 3 well matches the actual polishing amount.

Therefore, not only according to the above-described principle of the present invention but also according to the relationship between the relative contact speed and the polishing amount, for example, according to the equation shown in Equation 3, the polishing amount is predicted. The accuracy is further improved, which is preferable. Specifically, for example, in the formula shown in Expression 3, instead of the actual load P, the effective load P ′ obtained by using the relational expression or the look-up table from the index is applied. It is preferable to calculate the processing amount according to an equation in which the load P is replaced with the effective load P ′. However, in the present invention, it is not always necessary to consider the above-described saturation phenomenon. For example, the processing amount may be calculated according to an equation in which the load P is replaced with the effective load P ′ in Equation 1.

The expression of the relationship between the relative contact speed and the polishing amount is not limited to the expression 3, but may be, for example, a logarithmic function, an exponential function, an n-th order polynomial (2 ≦ n), or the like. ,
It may be a look-up table or the like. Such an expression or a look-up table may be obtained in advance by an experiment or the like.

The present inventor has determined that the relationship between the relative contact speed and the amount of polishing depends on the material constituting the surface to be polished of the object to be polished,
It has been found that it depends on the type of the abrasive, the material and the structure (groove structure) constituting the polishing surface of the polishing body (polishing pad), and the like. That is, it has been found that, for example, the constants f, g, and the like in the above equation 3 need to be appropriately changed according to these.

[First Embodiment]

Next, a polishing system according to the first embodiment of the present invention will be described.

FIG. 1 is a schematic configuration diagram schematically showing a polishing system according to a first embodiment of the present invention. FIG.
Is a schematic flowchart showing the operation of the polishing system. FIG. 3 is a schematic flowchart showing the processing content of step S2 in FIG.

The polishing system according to the present embodiment is similar to the polishing system shown in FIG.
As shown in FIG. 1, a polishing apparatus 1 that performs chemical mechanical polishing on a process wafer 2 as a polishing target (workpiece).
And a measuring device 3 for measuring the film thickness distribution (or the shape of the polished surface of the wafer 2) on the polished surface (processed surface) side of the wafer 2 before or after polishing, and for controlling the polishing apparatus 1. Creating device 4 for creating control parameters or control programs
And a transfer device 5 for transferring the wafer 2 between the measurement device 3 and the wafer holder 12 or the like.

The polishing apparatus 1 comprises: a polishing member (tool) 11;
A wafer holder 12 for holding the wafer 2 below the polishing member 11, and a supply path (not shown) formed in the polishing member 11;
A polishing agent supply unit (not shown) for supplying a polishing agent (slurry) between the wafer 2 and the polishing member 11 via a control unit, a control unit 15 including a computer, and the like. A drive unit 16 for driving a motor, an input unit 17 such as a keyboard, a display unit 18 such as a CRT, and a floppy (registered trademark) disk drive for reading and writing data from and to a floppy (registered trademark) disk as a recording medium 19 is provided.

The polishing member 11 has a polishing body (polishing pad) 14 provided on the lower surface of a polishing platen 13 and is driven by a mechanism (not shown) using an electric motor as an actuator, as shown by arrows in FIG. , Can be rotated, moved up and down, and swung (reciprocated) right and left. Polishing body 1
For example, a sheet-like foamed polyurethane or a non-foamed resin having a groove structure on the surface can be used as 4.

In the present embodiment, the polishing member (tool) 11
Although not shown in the drawing, the shape of the polishing body 14, which is a contact portion with the surface to be polished (the surface to be processed) of the wafer 2 in FIG. I have. Specifically, the shape of the polishing body 14 is
4 has an annular shape in which a portion near the rotation center is removed. As a result, the above-mentioned "floating" phenomenon of the polishing body 14 can be positively promoted, and the flatness (stepping ability) can be improved.
Can be increased. However, in the present invention, the polishing body 14 may be formed in a disk shape, for example.

The wafer 2 is held on the wafer holder 12, and the upper surface of the wafer 2 is the surface to be polished (the surface to be processed). The wafer holder 12 can be rotated by a mechanism (not shown) using an electric motor as an actuator, as shown by an arrow in FIG.

In the present embodiment, the diameter of the polishing member 11 is smaller than the diameter of the wafer 2, so that the footprint of the entire apparatus is reduced, and high-speed and low-load polishing is facilitated. However, in the present invention, the diameter of the polishing member 11 may be equal to or larger than the diameter of the wafer 2. Even in these cases, a part of the wafer 2 is temporarily protruded by the swing of the polishing member 11 during the polishing, and the part of the wafer 2 is kept at least for a certain period during the polishing.
Can be polished under conditions not in contact with the substrate. However, when the diameter of the polishing member 11 is equal to or larger than the diameter of the wafer 2, it is not always necessary to protrude a part of the wafer 2.

Here, the polishing of the wafer 2 by the polishing apparatus 1 will be described. The polishing member 11 swings while rotating, and is pressed against the upper surface of the wafer 2 on the wafer holder 12 with a predetermined pressure (load). The wafer 2 is rotated by rotating the wafer holder 12, and the wafer 2 and the polishing member 1 are rotated.
A relative movement is performed between the first and the second. In this state, the polishing agent is supplied from the polishing agent supply section between the wafer 2 and the polishing member 11, diffuses between them, and polishes the polished surface of the wafer 2. That is, the mechanical polishing by the relative movement of the polishing member 11 and the wafer 2 and the chemical action of the polishing agent act synergistically to perform good polishing.

The control unit 15 performs the above-described polishing operation according to the control parameters or the control program supplied from the preparation device 4 via the drive unit 16 in order to realize the above-described polishing operation.
Motors for rotating, vertically moving and swinging the polishing member 11,
It controls a motor for rotating the wafer holder 12 and controls other parts (not shown). Further, in the present embodiment, the control unit 15 also functions as an overall control unit of the entire polishing system, and generates the preparation device 4, the measurement device 3, and the transport device 5.
Are also controlled by the control unit 15.

The input section 17 is used by an operator to input various commands and necessary data. The display unit 18 displays an input guidance display and the like under the control of the control unit 15. The floppy (registered trademark) disk drive 19 reads the control parameters and the like from the floppy (registered trademark) disk on which the control parameters or the control program is recorded and supplies the control parameters and the like to the control unit 15 as necessary.

If the film on the surface to be polished of the wafer 2 is a SiO ₂ film or the like, for example, an optical interference type film thickness measuring device can be used as the measuring device 3. If the film is a metal film such as Cu, for example, an electric resistance type film thickness measuring device can be used. In the present embodiment, a film thickness measuring device capable of measuring a film thickness distribution is used as the measuring device 3.

The creation device 4 includes an arithmetic processing unit 20 including a computer, an input unit 21 such as a keyboard, a CRT, and the like.
And the like, and a floppy (registered trademark) for reading and writing data to a floppy (registered trademark) disk
And a disk drive 23. At the time of introduction,
The program recorded on the floppy (registered trademark) disk is installed on a hard disk (not shown) via the drive 23, so that the arithmetic processing unit 20 can execute the processing shown in FIG. Therefore, this floppy (registered trademark) disk constitutes a medium on which a program for executing the processing shown in FIG. 3 is recorded. Such a program can be transmitted to the creating device 4 via the Internet or the like. This applies to each of the embodiments described later. Needless to say, the arithmetic processing unit 20 and the control unit 15 may be configured by the same computer.

The recording medium is not limited to a floppy (registered trademark) disk, but may be, for example, a CD-R, MO, DVD, or the like. In this case, it goes without saying that a drive corresponding to the recording medium is used instead of the drive 23. This is the same for the floppy (registered trademark) disk drive 19 described above and for each of the embodiments described later.

Next, the operation of the polishing system according to the present embodiment will be described with reference to FIG. In this polishing system, when the operation is started, the following operation is performed under the control of the control unit 15. First, the transfer device 5 transfers the wafer 2 from a predetermined place to the measuring device 3, and thereafter, the measuring device 3
Measures the film thickness distribution on the polished surface side of the wafer 2, and the measurement result is automatically input to the arithmetic processing unit 20 of the creation device 4 (step S1). When the measurement by the measuring device 3 is completed, the transfer device 5 removes the wafer 2 on which the measurement has been completed.
The wafer is transferred from the measuring device 3 onto the wafer holder 12 of the polishing device 1. Next, the creating device 4 creates the control program or control parameter based on the initial film thickness distribution as a measurement result from the measuring device 3, and automatically outputs the created control program or control parameter to the control unit 15. (Step S2). Thereafter, the control unit 15 performs control according to the input control program or control parameter,
The polishing apparatus 1 polishes the surface to be polished of the wafer 2 (Step S3). When the polishing is completed, the wafer 2 is transferred to the transfer device 5
Is carried to a predetermined place, and a series of operations is completed.

Here, the processing content of step S2 in FIG. 2 will be described with reference to FIG.

Prior to the process in step S2, the values of parameters (fixed parameters) fixedly handled during the simulation among the polishing conditions, and the parameters for adjusting the values during the simulation among the polishing conditions (the adjustment parameter and the fixed parameter). Is input by the input unit 21 in advance. These are stored in an internal memory (not shown) of the arithmetic processing unit 20 (not shown). The fixed parameters include, for example, the type of film on the polished surface side of the wafer 2, the type of slurry, the type of material of the polishing body 14, the polishing body 1
4 (groove pattern, etc.), the diameter of the polishing body 14, the diameter of the wafer 2, and the like. The adjustment parameters include, for example, the number of rotations of the polishing member 11, the wafer 2
, The swing pattern of the polishing member 11 (speed, stroke, swing start position, etc.). Among the adjustment parameters, for example,
The rotation speed of the polishing member 11, the rotation speed of the wafer 2, and the like may be input in advance as fixed parameters.

Prior to the processing in step S2, the type of slurry, the material and structure of the polishing body 14 (groove structure)
In accordance with, for example, an index indicating a macroscopic contact relative speed of the contact surface between the surface to be polished of the wafer 2 and the polishing body 14 (for example, a contact relative over substantially the entire contact surface), which is obtained in advance through experiments or the like. The relationship between the maximum value, the minimum value or the average value of the speed, or the rotational speed of at least one of the polishing member 11 and the wafer 2), the actual load, and the effective load (the corrected load) It is stored in the internal memory of the arithmetic processing unit 20 in the form of an expression or a look-up table.

Further, prior to the processing in step S2,
Depending on the type of the slurry, the material and the structure (groove structure) of the polishing body 14, for example, the contact relative speed (the contact relative speed of the partial region for which the polishing amount is to be obtained) and the polishing amount obtained in advance through experiments or the like. Is stored in the internal memory of the arithmetic processing unit 20 in the form of an expression such as Expression 3 or a look-up table. This relationship is such that, at least when the contact relative speed is equal to or higher than a predetermined speed, the amount of polishing increases continuously or stepwise while the polishing amount increases continuously or stepwise as the contact relative speed increases. A relationship that becomes progressively smaller, or approximately equivalent to this relationship "
It is. At this time, the predetermined speed is, for example, 0.04
km / min. When the contact relative speed is equal to or less than the predetermined speed, the polishing amount may be predicted according to a linear relationship between the polishing amount and the contact relative speed. In addition,
The expression preferably includes at least one of an exponential function expression, a logarithmic function expression, and an n-th order polynomial (2 ≦ n). In the present invention, it is not necessary to consider the above-described saturation phenomenon. In this case, the relationship between the contact relative speed (the contact relative speed of the partial region for which the polishing amount is to be obtained) and the polishing amount is expressed by: It is not necessary to store it in the internal memory of the arithmetic processing unit 20.

When the process of step S2 is started, the arithmetic processing unit 20 of the creating device 4 first obtains the measurement result of the film thickness distribution sent from the measuring device 3, and
0 is stored in the internal memory (step S11).

Next, the arithmetic processing section 20 calculates a target polishing amount distribution based on the measurement result of the film thickness distribution (step S12). The target polishing amount distribution is a polishing amount distribution of the polished surface required to obtain a desired film thickness distribution.

Next, the arithmetic processing unit 20 sets (assumes) the value (or set of values) of the adjustment parameter to a certain value (or set of values) (step S13). This assumes control parameters or control programs.

Thereafter, the arithmetic processing section 20 sets one of the individual partial areas of the surface to be polished of the wafer 2 as a processing target (step S14). Next, the arithmetic processing unit 20 determines the pressure (actual) of the partial area set in step S14 based on the fixed parameter stored in the internal memory and the value of the adjustment parameter set in step S13. ), The contact relative speed, and the polishing time (contact time), and when the maximum value, the minimum value, or the average value is used as the index, the index is calculated (the polishing member 11 is used as the index). If at least one of the rotation speeds of the wafer 2 and the wafer 2 is adopted, there is no need to calculate the rotation speed.) Then, the arithmetic processing unit 20 uses the actual load P of the partial area and the index and selects the index, the actual load P, and the effective load (corrected) selected according to the fixed parameter stored in the internal memory. An effective load P ′ is obtained according to a formula or a look-up table indicating a relationship with the subsequent load P ′. Further, the arithmetic processing unit 20 calculates the effective load P ′ of the partial area,
An equation selected using the relative contact speed and the polishing time (contact time) in accordance with the fixed parameters stored in the internal memory (for example, in the equation (3), the actual load P is replaced with the effective load P ′) ), Calculate the amount of polishing (predicted)
(Step S15).

Next, the arithmetic processing section 20 determines whether or not the calculation of the polishing amount has been completed for all the partial regions of the surface to be polished of the wafer 2 (step S16). If not, the process returns to step S14. On the other hand, if the processing has been completed, the process proceeds to step S17. In this case, the polishing amount distribution of the surface to be polished of the wafer 2 is obtained. Steps S14 to S16 correspond to prediction means (simulation means) for predicting the polishing amount distribution of the polished surface of the wafer 2.

In step S17, the arithmetic processing unit 20
Is set in step S13 by comparing the predicted polishing amount distribution of the surface to be polished of the wafer 2 with the target polishing amount distribution calculated in step S12 to determine whether or not a predetermined standard is satisfied. The quality of the latest adjustment parameter value (or set of values), that is, the quality of the assumed control parameter or control program is determined.

If it is determined as NO at step S17, the process returns to step S13. At this time, in step S13, a value that is at least partially changed from the value (or set of values) set in step S13 up to the previous time is set.

On the other hand, if it is determined to be good in step S17, the arithmetic processing unit 20 stores the latest adjustment parameter value (or set of values) set in step S13 and, if necessary, in the internal memory. Based on the fixed parameters that are required, to achieve the polishing conditions indicated by them,
A control parameter or control program for controlling the polishing apparatus 1 is created and sent to the control unit 15 of the polishing apparatus 1 (Step S18). Thus, step S in FIG.
The process of No. 2 ends.

The polishing apparatus 1 is a high-speed polishing apparatus in which the accuracy of polishing amount prediction decreases when an index indicating the macroscopic relative contact speed of the contact surface between the polished surface of the wafer 2 and the polishing member 11 is not one of the parameters. Polishing may be performed under processing conditions. In addition, the polishing apparatus 1 controls the wafer 2 during normal operation.
The polishing may be performed under the polishing condition in which the average value of the relative contact speed over substantially the entire contact surface between the surface to be polished and the polishing member 11 is 100 m / min or more.

According to the present embodiment, in step S15 in FIG. 3, in accordance with the above-described principle of the present invention, the forming apparatus 4 determines the partial area of the surface to be polished of the wafer 2 and the polishing member 11
Not only one of the parameters is the relative speed of contact with the polishing member 11, but also an index indicating the macro relative contact speed of the contact surface between the polished surface of the wafer 2 and the polishing member 11 and including the partial region. Is used as another parameter, and the polishing amount of the partial region is predicted. Therefore, the polishing amount of the partial region of the surface to be polished of the wafer 2 can be accurately predicted. Therefore, steps S14 to S1 in FIG.
The accuracy of the prediction of the polishing amount distribution of the surface to be polished of the wafer 2 performed in 6 is also improved. Therefore, it is possible to efficiently optimize the polishing conditions (control parameters of the polishing apparatus and the like). As a result, overall process efficiency can be improved. Moreover, since the polishing apparatus 1 is operated in accordance with the control parameters or control program created by the creating apparatus 4, a desired film thickness distribution of the wafer 2 can be obtained with high accuracy, and high flatness can be secured. .

Further, according to the present embodiment, since the measuring device 3, the preparing device 4 and the polishing device 1 constitute a polishing system as a whole, the preparation of the measurement, control parameters and the like and the polishing are performed consistently. Thus, the efficiency of the polishing process as a whole can be improved.

Further, according to the present embodiment, the input of the measurement result from the measuring device 3 to the creating device 4 and the input of the control parameters or the control program created by the creating device 4 to the polishing device 1 are: Since the operation is automatically performed, the burden on the operator is eliminated, and the efficiency of the polishing process as a whole can be further improved. Each of the inputs can be performed in accordance with a command from the input unit 17 or 21.

[Second Embodiment]

FIG. 4 is a schematic flowchart showing the operation of the polishing system according to the second embodiment of the present invention.
4, steps that are the same as steps in FIG. 2 or that correspond to steps in FIG. 2 are given the same reference numerals, and overlapping descriptions are omitted.

This embodiment is different from the first embodiment only in the following points. That is, after the polishing step (Step S3), the same film thickness measurement as in Step S1 is performed (Step S4), and the measurement result is compared with a desired film thickness distribution on the surface to be polished of the wafer 2 or a desired film thickness on the surface to be polished. It is determined whether or not the polishing is performed again by comparing the shape with the shape (step S5). When the polishing is performed again, the process returns to step S2. When the polishing is not performed again, a series of operations is ended.

According to the present embodiment, steps S4, S
5, the steps S2 to S4 can be repeated again when the shape or thickness distribution of the polished surface of the wafer 2 once polished does not have the desired accuracy. Thus, a desired shape of the surface to be polished of the wafer 2 or a desired film thickness distribution on the surface to be polished can be more accurately obtained.

[Third Embodiment]

FIG. 5 is a schematic flowchart showing the operation of the creation device according to the third embodiment of the present invention.

In the present embodiment, the polishing system producing apparatus 4 according to the first embodiment shown in FIG. 1 is modified so as to be separated and independent from the measuring apparatus 3 and the polishing apparatus 1. FIG. 1 is a block diagram schematically showing a schematic configuration of the creating apparatus according to the present embodiment.
Is the same as Therefore, FIG. 1 is referred to in the description of the present embodiment. However, in the present embodiment, the line from the measuring device 3 to the arithmetic processing unit 20 and the line between the control unit 15 and the arithmetic processing unit 20 are removed.

When the creating apparatus according to the present embodiment starts operation, as shown in FIG. 5, the arithmetic processing section 20 controls the display section 22 to display an input guidance display, and prompts the operator to input the fixed parameter described above. Then, the user is prompted to input the type of the adjustment parameter described above (step S21). When these are input via the input unit 21, the arithmetic processing unit 2
0 controls the display unit 22 to display the input guidance display,
The operator is prompted to input the film thickness distribution of the wafer 2 measured by the measuring device 3 (Step S22). Input unit 2
When this film thickness distribution is input via
0 performs steps S23 to S28 respectively corresponding to steps S12 to S17 in FIG.

In the case of YES in step S28, the arithmetic processing unit 20 determines the predicted polishing amount distribution of the surface to be polished of the wafer 2 used in the determination in step S28,
Based on the initial film thickness distribution input in Step 2, the predicted film thickness distribution of the polished surface of the wafer 2 is calculated (Step S).
29). After that, the arithmetic processing unit 20 displays the predicted polishing amount distribution, the initial film thickness distribution, and the predicted film thickness distribution on the display unit 2.
2 is displayed (step S30).

Next, the arithmetic processing unit 20 creates a control parameter or a control program for controlling the polishing apparatus 1 in the same manner as in step S18 in FIG. The data is written to a floppy disk (not shown) via the drive 23 (step S31). With this, the operation of the creating apparatus according to the present embodiment ends. The operator removes the floppy (registered trademark) disk from the drive 23 and sets it in the drive 19 of the polishing apparatus 1.
To the controller 15 to start the polishing operation according to the control parameters or control program recorded on the floppy (registered trademark) disk.

According to this embodiment, the same advantages as in the first embodiment can be obtained except that the burden on the operator is slightly increased.

[Fourth Embodiment]

FIG. 6 is a schematic flowchart showing the operation of the simulation device according to the fourth embodiment of the present invention.

In this embodiment, the preparation system 4 of the polishing system according to the first embodiment shown in FIG. 1 is separated and independent from the measuring device 3 and the polishing device 1, and the operation of the arithmetic processing section 20 is controlled. Instead, it is modified to have only a simulation function. A block diagram schematically illustrating a schematic configuration of the creation apparatus according to the present embodiment,
This is the same as the creation device 4 in FIG. Therefore, FIG. 1 is referred to in the description of the present embodiment.

When the production apparatus according to the present embodiment starts operation, as shown in FIG. 6, the arithmetic processing section 20 controls the display section 22 to display an input guide display, and prompts the operator for all polishing conditions. The user is prompted to input (fixed parameter and adjustment parameter) (step S41). When these are input via the input unit 21, the arithmetic processing unit 20
Controls the display unit 22 to display an input guide display, and prompts the operator to input a film thickness distribution of the wafer 2 measured by the measuring device 3 (step S42). Input unit 21
When this film thickness distribution is input via the
Performs steps S43 to S46 respectively corresponding to steps S12 and S14 to S16 in FIG.

In the case of YES in step S46, the arithmetic processing unit 20 calculates the predicted polishing amount distribution of the surface to be polished of the wafer 2 obtained up to this point and the initial film thickness distribution input in step S42. Is calculated based on the estimated thickness distribution of the polished surface of the wafer 2 (step S47). Thereafter, the arithmetic processing unit 20 causes the display unit 22 to display the predicted polishing amount distribution, the initial film thickness distribution, and the predicted film thickness distribution (step S48).

Next, the arithmetic processing unit 20 determines whether there is a command from the operator via the input unit 22 to continue the simulation or to terminate the simulation (step S49). If there is a command to continue, the process returns to step S41. On the other hand, if there is a command to end, the operation ends.

According to the present embodiment, when the operator inputs the polishing conditions as appropriate, the wafer
The simulation result of the film thickness distribution of the surface to be polished can be obtained. Therefore, the operator can also create a control parameter or a control program for controlling the polishing apparatus 1 using this simulation apparatus.

[Fifth Embodiment]

FIG. 7 is a flowchart showing a semiconductor device manufacturing process. After the semiconductor device manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204. Steps S201 to S204 according to the selection
Proceed to one of

Step S201 is an oxidation step for oxidizing the surface of the silicon wafer. Step S202 is CV
CV to form an insulating film on the silicon wafer surface by D etc.
This is the D step. Step S203 is an electrode forming step of forming an electrode film on the silicon wafer by a process such as vapor deposition.
Step S204 is an ion implantation step of implanting ions into the silicon wafer.

After the CVD step or the electrode forming step,
Proceeding to step S209, it is determined whether a CMP process is to be performed. If not, the process proceeds to step S206.
If so, the process proceeds to step S205. Step S205
Is a CMP process. In this process, the polishing apparatus according to the present invention is used to planarize an interlayer insulating film, form a damascene by polishing a metal film on the surface of a semiconductor device, and the like.

After the CMP step or the oxidation step, the process proceeds to Step S206. Step S206 is a photolithography step. In the photolithography process, a resist is applied to a silicon wafer, a circuit pattern is printed on the silicon wafer by exposure using an exposure apparatus, and the exposed silicon wafer is developed. Further, in the next step S207, portions other than the developed resist image are removed by etching.
Thereafter, the resist is stripped, and the etching step is performed to remove the unnecessary resist after the etching.

Next, it is determined in step S208 whether all necessary processes have been completed, and if not, step S20
Returning to 0, the above steps are repeated to form a circuit pattern on the silicon wafer. If it is determined in step S208 that all steps have been completed, the process ends.

In the semiconductor device manufacturing method according to the present invention, since the polishing apparatus according to the present invention is used in the CMP step, the desired shape of the surface to be polished of the wafer or the desired film on the side to be polished in the CMP step is used. Thickness distribution can be obtained with high accuracy, and the yield in the CMP process is improved.
The process efficiency of the CMP process can be improved. As a result, there is an effect that a semiconductor device can be manufactured at a lower cost than a conventional semiconductor device manufacturing method.

Note that the polishing apparatus according to the present invention may be used in a CMP step of a semiconductor device manufacturing process other than the above-described semiconductor device manufacturing process.

The semiconductor device according to the present invention is manufactured by the semiconductor device manufacturing method according to the present invention. As a result, the semiconductor device can be manufactured at a lower cost than the conventional semiconductor device manufacturing method, and the manufacturing cost of the semiconductor device can be reduced.

Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments.

For example, the above embodiments are examples applied to CMP, but the present invention can also be applied to polishing of optical members such as glass.

[0170]

As described above, according to the present invention,
It is possible to provide a simulation method and apparatus capable of accurately predicting a distribution of a processed amount of a processed surface of a workpiece after polishing or other processing.

Further, according to the present invention, it is possible to provide a processing apparatus capable of accurately obtaining a desired surface shape of a processing surface of a workpiece or a desired film thickness distribution on the processing surface side.

Further, according to the present invention, a desired surface shape of a surface to be processed of a workpiece or a desired film thickness distribution on the side of the surface to be processed can be obtained with high accuracy, and the efficiency of the processing step is improved. And a processing system capable of performing such processing.

Further, according to the present invention, it is possible to improve the process efficiency and improve the yield, and it is possible to manufacture a semiconductor device at a lower cost than a conventional semiconductor device manufacturing method. Can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram schematically showing a polishing system according to a first embodiment of the present invention.

FIG. 2 is a schematic flowchart showing an operation of the polishing system according to the first embodiment of the present invention.

FIG. 3 is a schematic flowchart showing the processing content of step S2 in FIG. 2;

FIG. 4 is a schematic flowchart showing an operation of the polishing system according to the second embodiment of the present invention.

FIG. 5 is a schematic flowchart illustrating the operation of a preparation apparatus that can be used with a polishing apparatus according to a third embodiment of the present invention.

FIG. 6 is a schematic flowchart showing the operation of a prediction device that can be used with a polishing device according to a third embodiment of the present invention.

FIG. 7 is a flowchart showing a semiconductor device manufacturing process.

FIG. 8 is a graph showing experimental data showing a relationship between a contact relative speed and a polishing amount when a tool rotation speed is changed.

FIG. 9 is a graph showing experimental data showing ideal step-elimination characteristics and ideal ideal step-elimination characteristics when the rotational speed of the tool is changed.

FIG. 10 is a graph comparing experimental data and calculated values showing the relationship between the relative contact speed and the polishing amount.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Polishing device 2 Wafer 3 Film thickness measuring device 4 Preparation device 5 Transport device 11 Polishing member 12 Wafer holder 13 Polishing platen 14 Polishing body 15 Control unit 16 Drive unit 17,21 Input unit 18,22 Display unit 19,23 Floppy (registered) Trademark) disk drive 20 arithmetic processing unit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) B24B 49/02 B24B 49/02 Z G01B 21/08 G01B 21/08 H01L 21/00 H01L 21/00 21 / 306 21/306 MF term (reference) 2F069 AA47 AA51 BB15 GG06 GG07 HH30 NN18 PP06 3C034 AA19 BB92 CA01 CB01 DD01 3C058 AA07 AC02 BA01 BB06 BB08 BB09 BC01 BC02 CB01 CB03 CB05 DA12 A17 BB05 A12 DA17

Claims (8)

[Claims] 1. The method according to claim 1, further comprising: moving the tool and the workpiece relative to each other while applying a load between the tool and the workpiece, thereby processing the workpiece after processing the workpiece. In a simulation method for predicting a processing amount distribution of a processing surface, for each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece, the partial region and the The relative contact speed with the tool as one of the parameters, and an index indicating the macro contact relative speed of the contact surface between the work surface and the tool, including the partial area, as a parameter As one of the other,
A simulation method, wherein a machining amount of the partial area is predicted. 2. The method according to claim 1, wherein the indicator is a maximum value, a minimum value, or an average value of the contact relative speeds over substantially the entire contact surface.
2. The simulation method according to claim 1, wherein the rotation speed is at least one of the tool and the workpiece. 3. The process according to claim 1, wherein the processing of the workpiece is chemical mechanical polishing performed while interposing an abrasive between the tool and the workpiece. Simulation method. 4. A relationship between the index and the processing amount of the partial region includes a material forming a workpiece of the workpiece, a type of the abrasive, and a material forming a processing surface of the tool. 4. The simulation method according to claim 3, wherein a relationship determined according to at least one of the structures is used. 5. The method according to claim 5, further comprising: moving the tool and the workpiece relative to each other while applying a load between the tool and the workpiece. In a simulation apparatus for predicting a processing amount distribution of a processing surface, for each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece, the partial region and the The relative contact speed with the tool as one of the parameters, and an index indicating the macro contact relative speed of the contact surface between the work surface and the tool, including the partial area, as a parameter As another one of the
A simulation apparatus comprising: a prediction unit configured to predict a machining amount of the partial region. 6. A processing apparatus for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece. A processing apparatus that processes the workpiece according to a control parameter or a control program created by using the simulation method according to any one of the above. 7. A processing device for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece, and a processing apparatus for processing the workpiece before or after processing. A measuring device for measuring the shape of the processed surface of the workpiece or the film thickness distribution on the processed surface side, and a creating device for creating a control parameter or a control program for controlling the processing device. A processing system comprising: (a) a shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side;
The desired shape or the desired shape based on a measurement result by the measuring device and a desired shape of the work surface of the work input from the input unit or a desired film thickness distribution on the work surface side. Means for obtaining a target processing amount distribution, which is a processing amount distribution of the surface to be processed necessary to obtain a film thickness distribution,
(B) Assuming means for assuming the control parameter or control program, and (c) using the simulation method according to any one of claims 1 to 4, or 5
Simulation means for predicting a machining amount distribution of the work surface obtained after the work is machined by the machining apparatus according to a control parameter or control program assumed by the estimation means, using the simulation device described in the above. And (d) determining means for comparing the processing amount distribution predicted by the simulation means with the target processing amount distribution to determine whether the control parameter or the control program assumed by the assumption means is good or bad. A machining system for machining the workpiece in accordance with a control parameter or a control program created by the creation device. 8. A method for manufacturing a semiconductor device, comprising a step of flattening a surface of a semiconductor wafer using the processing apparatus according to claim 6 or the processing system according to claim 7.