JP2005252036A - Method and system of chemicalmechanical polishing and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To highly accurately set a polishing rate and a polishing time in chemicalmechanical polishing in consideration of a product wafer to be polished and a mechanical difference in devices to be used or the like. <P>SOLUTION: The calculation of the polishing rate and the polishing time can be set highly accurately in response to actual chemicalmechanical polishing conditions for polishing a product wafer by using a formula which favorably approximates a portion at the side showing an aimed polishing amount among curves showing chemicalmechanical polishing conditions as a calculation formula. In the calculation formula, a parameter A regarding the film quality of a film to be polished, a parameter B regarding the undulation state of the film surface, and a parameter C regarding the mechanical difference in the chemicalmechanical polishing devices are combined by an operator. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device manufacturing technique, and in particular, a technique that is effective when applied to accurately calculate polishing conditions such as a polishing rate in chemical mechanical polishing (CMP) based on polishing results. It is about.

  The technology described below has been studied by the present inventors in completing the present invention, and the outline thereof is as follows.

  In recent years, the chemical mechanical polishing technique is positioned as an extremely important technique in high-precision planarization of semiconductor wafers as semiconductor devices are increasingly required to be highly integrated. Chemical mechanical polishing is polishing performed while supplying a slurry composed of abrasive grains and a chemical solution between a rotating polishing pad and a surface to be polished of a semiconductor wafer.

  In such chemical mechanical polishing, prior to actual polishing of a product wafer, a reference polishing rate in a chemical mechanical polishing apparatus used using a dummy wafer is set. Pre-polishing some actual wafers at the set reference polishing rate, confirming whether the polishing time is excessive or insufficient based on the results of the preceding polishing, and setting the optimum polishing time suitable for the previously set reference polishing rate The product is then polished. Since the reference polishing rate is an extremely important factor that determines the quality of polishing, including the setting accuracy of the polishing time, it is regularly reviewed in subsequent product polishing to use the most accurate value possible. .

  As described above, in chemical mechanical polishing, various types of polishing including setting of the reference polishing rate of the product wafer are performed by using a dummy wafer or performing prior polishing before starting the polishing of the product wafer. A considerable amount of pre-work has been done to set the conditions.

  In addition, when an appropriate reference polishing rate cannot be set, the result of chemical mechanical polishing over a predetermined time based on the polishing rate results in insufficient polishing or excessive polishing, resulting in additional polishing or disposal of the polished wafer, resulting in As a result, the throughput of the chemical mechanical polishing process is significantly reduced.

  Therefore, a technique for calculating such a polishing rate efficiently and with high accuracy is required. As one of such technologies, the latest polishing rate is calculated from the difference between the film thickness data before polishing and the film thickness data after polishing, and the actual polishing time, and the process recipe information from the factory host computer as the optimum recipe A technique for setting a chemical mechanical polishing apparatus has been proposed (see Patent Document 1).

  The object to be polished based on an arbitrarily set calculation formula using parameters and operators including the target value of the thickness before polishing, the polishing time, the thickness after polishing and the thickness of the object to be polished. A technique for calculating the optimum polishing time is also proposed (see Patent Document 2).

Furthermore, a technique for calculating an estimated polishing rate and determining an estimated polishing time for each type / process / manufacturing facility has been proposed (see Patent Document 3).
JP 11-186204 A JP 2002-154053 A JP 2002-334135 A

  However, the present inventor has found that the above polishing rate setting technique has the following problems.

  That is, the technique described in Patent Document 1 is a technique for setting a polishing rate that is unsuitable for multi-product production because the polishing rate differs depending on the shape of the pattern to be polished or the quality of the film to be polished.

  In the method described in Patent Document 2, the fluctuation of the polishing rate that changes every moment depending on the state of the apparatus consumable member is not taken into consideration, and it is not expected to increase the accuracy of the polishing rate calculation. Further, in this technique, a method for determining a calculation formula for calculating the optimum polishing time is not described, and it is unclear how the polishing rate should be calculated.

  On the other hand, in the technique described in Patent Document 3, consideration is given so that the estimated polishing rate can be calculated using weighting. However, the definition of such weighting is unclear. For this reason, the definition of the estimated polishing rate itself becomes ambiguous, and the accuracy of the estimated polishing rate to be calculated cannot be ensured. In addition, when the model formula is not exactly the same, there is a disadvantage that the amount of polishing or the polishing time cannot be controlled because there is no correction function.

  Further, in actual chemical mechanical polishing, the polishing situation varies greatly depending on the uneven pattern of the film to be polished, but no technology that takes into consideration the polishing rate in this respect has been found.

  Further, in chemical mechanical polishing, even when polishing the same lot of product wafers, a plurality of chemical mechanical polishing apparatuses can be used, or even a single chemical mechanical polishing apparatus can be used with a plurality of polishing heads. However, there is no technique that takes into account the influence of the so-called machine difference as a difference between the apparatuses or the heads on the polishing rate. The present inventor has considered that it is important to consider this point in calculating a highly accurate polishing rate.

  An object of the present invention is to enable the setting of a polishing rate and a polishing time in chemical mechanical polishing with high accuracy.

  Another object of the present invention is to enable consideration of machine differences between apparatuses when setting a polishing rate and a polishing time in chemical mechanical polishing.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The formula for calculating the polishing rate or polishing time is a formula that includes parameters related to film quality, parameters related to the uneven pattern of the film to be polished, and parameters indicating machine-to-machine differences. The polishing rate and polishing time are calculated in consideration of the influence based on the above.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  Highly accurate chemical mechanical polishing can be performed by including parameters relating to film quality, parameters relating to uneven patterns, and parameters relating to machine-to-machine differences in chemical mechanical polishing equipment in the calculation formula for polishing rate or polishing time. .

  By correcting the polishing rate based on the actual polishing result of the product wafer, the calculation accuracy of the polishing rate can be further increased, and the efficiency of the polishing process can be further improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof may be omitted.

  In the chemical mechanical polishing method of the present invention, the chemical mechanical polishing is performed by calculating a polishing condition such as a polishing rate or a polishing time using a new calculation formula. Such a new calculation formula is composed of a term that depends on the product wafer to be chemically mechanically polished and a term that depends on an apparatus for chemically and mechanically polishing the product wafer, and these terms are combined by an operator. ing.

  The term that depends on the product wafer is a condition that the influence on the polishing conditions of the chemical mechanical polishing apparatus to be used is considered to be the same. Parameter A that exclusively indicates the influence of film properties such as film quality on the polishing conditions, and polishing At least a parameter B that exclusively indicates the influence of the undulation state such as the uneven pattern of the film to be polished on the conditions. It is assumed that the parameter A and the parameter B can be numerically set independently. The parameters A and B are combined by an operator and constitute a term that depends on the product wafer.

  Also, the numerical data of the parameters A and B can be updated by changing or editing as necessary based on the design data or the measurement result of the polishing result of the product wafer.

  In the present specification, the product wafer means a wafer that is a production target to be subjected to chemical mechanical polishing, and is a term used to distinguish it from a dummy wafer used for setting conditions for chemical mechanical polishing.

  The film property relating to the parameter A means a chemical property or physical property of the film that affects the polishing conditions. Examples of the film property include a film quality indicating the hardness and softness of the film. .

  The undulation state with respect to the parameter B means an uneven state of the film surface to be subjected to chemical mechanical polishing. The pattern density of the lower layer covered by the film, and the film thickness uniformity during film formation It means the undulating state caused by turbulence and the like.

  Polishing results mean that the chemical mechanical polishing of the product wafer is actually performed and the polishing status can be grasped as a numerical value, for example, the film thickness after polishing, the polishing amount, etc. are examples of what it means It is done.

  The polishing condition means a condition to be considered when actually performing chemical mechanical polishing with a chemical mechanical polishing apparatus. For example, a polishing amount, a polishing rate, a polishing rate, a polishing time, or the like is given as an example. be able to.

  Further, the term depending on the apparatus has a parameter C that exclusively indicates the influence of the chemical mechanical polishing apparatus on the polishing condition under the condition that the influence on the polishing condition of the product wafer to be polished is considered to be the same. . The parameter C can be set for each chemical mechanical polishing apparatus, and constitutes a term depending on the apparatus.

  The parameter C can be set for each chemical mechanical polishing apparatus as described above when a plurality of chemical mechanical polishing apparatuses are used. For example, in the case of a multi-head configuration having a plurality of polishing heads even with one chemical mechanical polishing apparatus, the parameter C is set for each of the plurality of polishing heads. Therefore, the parameter C can be grasped as a parameter indicating a machine difference between apparatuses.

If an operator indicating any of addition / subtraction / multiplication / division (+, −, ×, ÷) is indicated by a symbol *, the calculation formula according to the present invention can be expressed as follows. That is,
Polishing conditions (polishing rate, polishing time, etc.) = Product wafer dependent term * device dependent term.
Product wafer dependent term = f (A, B), device dependent term = g (C); f, g are functions.
As an example showing the above calculation formula more specifically, the following formula can be given. In the following calculation formula, a parameter A that depends on the film properties, a parameter B that depends on the undulation state of the film, and a parameter C that depends on the machine-to-device difference are combined via operators. That is,
Polishing rate = {(film thickness before polishing−target film thickness) − (B + C)} / (A × polishing time) Equation 3
Polishing time = {(film thickness before polishing−target film thickness) − (B + C)} / (A × polishing rate) Equation 4
The above formula 4 is a modified version of the formula 3 and is the same formula.

  The polishing amount of the above formula 3 or 4 (film thickness before polishing−target film thickness) is an operator of the term A × (polishing rate × polishing time) + (B) and the term consisting of C. It is a combined expression. A × (polishing rate × polishing time) + (B) can be said to be a product wafer-dependent term in which parameters A and B are combined by an operator. The term C can be said to be a device-dependent term consisting of a parameter C indicating the machine difference between devices. That is, it can be said that Formula 3 or Formula 4 is a more specific example of Formula 1 or Formula 2.

  The present inventor has found the proposed calculation formula as a close approximation of the chemical mechanical polishing situation in observing the actual chemical mechanical polishing of the product wafer.

  That is, when the film thickness is monitored while performing chemical mechanical polishing on the actual chemical mechanical polishing of the product wafer, the film thickness changes logarithmically with the polishing time. Such a state is shown as a biaxial graph of the polishing amount and the polishing time, for example, as shown in FIGS. 1 (a) and 1 (b). That is, the state of chemical mechanical polishing can be grasped by the logarithmic approximate curve h. A point P on the logarithmic approximate curve h is a point indicating the target polishing amount.

  In the case shown in FIG. 1A, the film thickness is monitored at the convex portion of the concavo-convex pattern on the film surface of the product wafer to be polished. In the case of FIG. 1B, the film thickness is monitored at the concave portion. Is the case.

  As shown in FIGS. 1A and 1B, the present inventor has shown that the transition from the start of polishing to the target polishing amount and the end of polishing is the product wafer on the polishing side, as shown in FIGS. I noticed that it can be divided into two patterns depending on the situation. Such patterns are shown as polished patterns I and II as shown in FIGS. 1 (a) and 1 (b).

  From the state where the film surface is uneven before and after polishing, the pattern from the start of chemical mechanical polishing until the film surface becomes flat to some extent (indicated as pattern I to be polished in the figure) and the film surface to some extent After flattening, it was noticed that the entire film surface was chemically and mechanically polished up to the target film thickness (denoted as polishing pattern II in the figure). As shown in FIGS. 1 (a) and 1 (b), the actual polishing state can be grasped when the pattern changes to the polishing pattern II via the polishing pattern I.

  The case of FIG. 1A will be described as an example. In the polished pattern I, when chemical mechanical polishing is started, the convex portions of the concavo-convex pattern on the film surface to be polished are initially polished. The amount of polishing per unit time has increased greatly and steeply. As the polishing progresses and the number of convex portions decreases, the steep curve indicating the polishing amount per unit time becomes dull.

  As shown in FIG. 1A, the polishing amount per unit time can be approximated by a straight line having a substantially constant slope after the elapse of t1 time from the start of polishing. The time t1 is a time at which the pattern to be polished I changes to the pattern to be polished II. The to-be-polished pattern I can be understood as a pattern in which the influence of the undulation state of the film exclusively affects the polishing conditions such as the polishing amount, the polishing rate, and the polishing time.

  On the other hand, it is understood that after the polishing time t1, the factor affecting the above polishing conditions for chemical mechanical polishing is not the undulation state such as the concavo-convex pattern on the film surface, and the influence of the film properties such as the film quality mainly appears. can do. That is, the present inventor has grasped that the influence of the parameter B is greatly effective in the region of the polished pattern I and that the influence of the parameter A is greatly effective in the region of the polished pattern II.

  In chemical mechanical polishing, ideally, an equation of a logarithmic approximation curve h indicating the actual chemical mechanical polishing state is obtained, and necessary polishing conditions such as a polishing rate or a polishing time are calculated from the equation. Thus, it is preferable to perform chemical mechanical polishing because it is possible to estimate the polishing rate or polishing time in accordance with the actual chemical mechanical polishing situation. However, in reality, the logarithmic approximate curve h considering various factors is expected to be a complex expression, and it is actually difficult to actually display the function as an expression.

  Therefore, how to calculate an approximate expression in accordance with the actual chemical mechanical polishing situation indicated by the logarithmic approximate curve h as a calculation formula is more accurate in estimating and calculating the polishing rate or polishing time. It will be necessary.

  Under such circumstances, the present inventor considered that it is not necessary to approximate the entire logarithmic approximate curve h even if it is approximated to the logarithmic approximate curve h. In the logarithmic approximate curve h, the portion belonging to the region of the pattern I to be polished is a portion indicating the initial state of chemical mechanical polishing as described above, and the polishing end point indicating the final polishing amount is the pattern to be polished. It should be present in the area of II.

  Accordingly, the inventors have conceived that it is only necessary to approximate the logarithmic approximate curve h in the region of the polished pattern II.

  As shown in FIG. 1A, in the region of the polished pattern II, the logarithmic approximate curve h is a straight line with a constant slope, and such a portion is sufficiently good as an asymptotic line of the logarithmic approximate curve h. We thought that approximation could be done. Even if it is assumed that the point indicating the polishing end point, that is, the point indicating the final polishing amount, is on the linear formula of the asymptotic line, it is considered to be sufficiently effective. Such an asymptote is shown as a straight line i (indicated by a bold line in the figure). The straight line i is a ridge shown by a linear expression having an intercept.

  As shown in FIG. 1A, the straight line i is a function that depends on film properties such as film quality and is proportional to the polishing time and the polishing rate (polishing amount per unit time) in the region of the pattern II to be polished. It can be expressed as This is a function of a parameter relating to film properties such as film quality and polishing time.

  On the other hand, the cut portion can be considered to be caused by a region of the pattern I to be polished which shows the influence of the undulation state such as the uneven pattern on the surface of the film to be polished. Therefore, it is considered that such a section becomes a function of parameters related to the uneven pattern.

  In view of the above points, the present inventor considered that the parameters related to the film properties such as the film quality are A, the parameters related to the undulation state such as the concavo-convex pattern of the film are B, and the parameters related to the machine difference between the devices are C Then, for example, the idea is that the following approximate expression holds.

That is,
Polishing amount = (A × polishing rate × polishing time + B) * C Equation 5
In the above formula 5, it is shown that the parameter C relating to the machine difference between apparatuses is involved in the polishing parameters A and B by using any operator of addition, subtraction, multiplication and division.

  The present inventor, as a machine difference between apparatuses, actually affects chemical mechanical polishing, for example, when there is a time difference between the start of polishing time measurement and the actual start of polishing. Can be mentioned. That is, the time difference that should be zero in some cases is not zero. Even if the same time is set between chemical mechanical polishing devices, the actual time is different for each device, and the time difference affects the polishing conditions such as the polishing amount. It becomes.

  For example, if the parameter C indicating the machine difference is defined as indicating the time difference between the start of time measurement and the start of polishing, the parameter C is not the origin 0 at the rising position of the logarithmic approximate curve h in FIG. As a result, the value of the intercept of the straight line i should be affected.

Therefore, as the parameter C indicating the machine difference, for example, if the time difference between the start of timing and the start of polishing is given, the above formula 5 can be expressed as follows. That is,
Polishing amount = A × polishing rate × polishing time + B + C Equation 6
Here, since the polishing amount depends on the difference between the film thickness before chemical mechanical polishing and the target film thickness, the above formula is obtained by substituting the film thickness before polishing−target film thickness into the polishing amount. 6 belongs to the above-mentioned formula 3 or formula 4.

  Thus, the calculation formula used in the present invention is an equation obtained by approximating a portion relating to the actual target polishing amount of the logarithmic approximation curve h indicating the actual chemical mechanical polishing situation as a straight line. It can be said that the calculation of the polishing rate and the polishing time can be performed with high accuracy in accordance with the chemical mechanical polishing situation.

  On the other hand, in the chemical mechanical polishing, in the conventional methods that do not consider the parameters A and B, it is assumed that the logarithmic amount of polishing is proportional to the polishing time. In such a case, as shown in FIG. 1 (a), the logarithmic polishing amount is plotted on the vertical axis and the polishing time is plotted on the horizontal axis, and approximated as a straight line g passing through the origin 0 and the point P indicating the target polishing amount, It was to grasp the chemical mechanical polishing situation. That is, it is an idea that the polishing rate is constant and the polishing amount is proportional to time until the point P indicating the target polishing amount is reached.

  In the conventional approximation method using the straight line g, as is apparent from FIG. 1A, it is difficult to find a similar part to the logarithmic approximation curve h indicating the actual chemical mechanical polishing state. On the other hand, the calculation expression expressed as the expression 3, 4 or 6 proposed in the present invention sufficiently approximates the logarithmic approximate curve h in the region of the polished pattern II as described above.

  Therefore, the optimum polishing time can be set with high accuracy by using the calculation formula proposed in the present invention. For example, the chemical mechanical polishing is performed up to the point P indicating the target polishing amount, but it is necessary to perform additional polishing and reset the point Q indicating the final polishing amount due to the setting failure of the target polishing amount. To do.

  In this case, the point Q indicating the final polishing amount should be ahead of the point P in the polished pattern II region of the logarithmic approximate curve h. In such a case, the time required for the additional polishing is Δtq which is the difference between the polishing times tp and tq, as shown in FIG.

  On the other hand, in the conventional methods, the chemical mechanical polishing situation is approximated by a straight line g connecting the point P indicating the target polishing amount and the origin, so that the additional polishing time indicates the final polishing amount on the straight line g. Δtq1 is a difference between the polishing time tq1 at Q1 and the time tp at the point P. However, as shown in FIG. 1A, it can be seen that a large error occurs when Δtq1 << Δtq. On the other hand, the formula in the present invention uses a calculation formula that is a straight line i that closely approximates the asymptote, so that the time required for additional polishing close to Δtq can be calculated with considerable accuracy.

  In the above description, it is shown in FIG. 1A that the formula proposed in the present invention closely approximates the actual chemical mechanical polishing situation, that is, on the film surface of the product wafer to be polished. Although the case where film thickness monitoring was performed by the convex part of the concavo-convex pattern was described as an example, the effectiveness can also be explained from the case shown in FIG. it can. The calculation formula proposed in the present invention is suitable for any pattern of irregularities on the surface of the film to be chemically mechanically polished.

  Hereinafter, it will be described that the effectiveness of the proposed calculation formula in the present invention can be sufficiently verified even from the case shown in FIG.

  When the film thickness monitoring is performed in the concave portion indicated by the logarithmic approximate curve h in FIG. 1B as the actual chemical mechanical polishing situation, when chemical mechanical polishing is started, Since the concave portions of the concavo-convex pattern on the film surface to be polished are not initially polished, the initial polishing amount per unit time does not increase that much, but the polishing amount gradually increases as polishing progresses. Further, when polishing proceeds, the pattern to be polished I shifts to the pattern to be polished II. Assuming this transition as time t1, the polishing amount per unit time can be approximated by a straight line having a substantially constant slope after elapse of t1 from the start of polishing.

  Therefore, also in the case shown in FIG. 1B, as in the case shown in FIG. 1A, the pattern I to be polished is polished by the influence of the undulation state of the film exclusively on the polishing amount, polishing speed, polishing time, and the like. It can be understood as a pattern affecting the conditions. It should be understood that after the polishing time t1, the factor affecting the above polishing conditions for chemical mechanical polishing is not the undulation state such as the uneven pattern on the film surface, but mainly the influence of the film properties such as film quality. You can also.

  That is, in the case shown in FIG. 1B as well, as in the case shown in FIG. 1A, the influence of the parameter B greatly affects the area of the pattern I to be polished, and the influence of the parameter A affects the area of the pattern II to be polished. It may be understood that is greatly effective.

  When calculating polishing conditions such as the polishing rate and polishing time for chemical mechanical polishing, the entire logarithmic approximation curve h is approximated in the same way as in FIG. 1A in the case of FIG. It can be considered that it is only necessary to approximate the logarithmic approximate curve h in the region of the pattern II to be polished from which information of the polishing end point relating to the final polishing amount can be obtained.

  Also in the case shown in FIG. 1B, as described above, in the region of the polished pattern II, the logarithmic approximate curve h is a straight line having a constant slope, and this portion is an asymptotic line of the logarithmic approximate curve h. A sufficiently good approximation should be possible. When such an asymptote is shown as a straight line i (indicated by a thick line in the figure), the straight line i is an eaves represented by a linear expression having an intercept.

  Also, in the case shown in FIG. 1B, the straight line i also depends on the film properties such as the film quality in the region of the pattern II to be polished in which the influence of the parameter A is greatly affected, as shown in FIG. 1A. In addition, it can be expressed as a function proportional to the polishing time and the polishing rate (polishing amount per unit time), and is a function of the parameter A relating to film properties such as film quality and the polishing time. The section portion can be considered to be caused by a region of the pattern I to be polished that shows the influence of the undulation state such as the concavo-convex pattern on the film surface to be polished, and a function of the parameter B related to the concavo-convex pattern That's it. Therefore, as an expression suitable for the straight line i, the approximate expression shown in the above-described Expression 5 can be assumed.

  In addition, by grasping the parameter C indicating the machine difference as indicating, for example, the time difference between the start of timing and the start of polishing, and by grasping the polishing amount as the film thickness before polishing−the target film thickness, FIG. Formula 5 proposed as a formula that closely approximates the polished pattern II portion of the logarithmic approximate curve h shown can be expressed as Formula 6, and also as Formula 3 or Formula 4, as in the case of FIG. it can.

  Therefore, it can be seen that the calculation formula used in the present invention is a formula that can be applied regardless of the concavo-convex pattern on the surface of the film to be chemically mechanically polished. This is not a property that is suitable only for one of the models of the uneven pattern on the film surface, but can be effectively applied to both models, and can be an extremely versatile calculation formula. By using this calculation formula, it is possible to calculate the polishing rate and the polishing time with high accuracy in accordance with the actual chemical mechanical polishing situation.

  Further, even in the case shown in FIG. 1B, the accuracy in the additional polishing is, for example, as shown in FIG. 1A between the conventional approximation method and the calculation formula proposed in the present invention. Similarly, it is much more accurate to use the calculation formula according to the present invention.

  Also in the case shown in FIG. 1B, in the conventional approximation method, the approximation is performed by the straight line g connecting the origin and the target polishing amount point P as described above. In such a case, the chemical mechanical polishing was performed up to the point P indicating the target polishing amount. However, due to the setting failure of the target polishing amount, it is necessary to perform additional polishing and reset the point Q indicating the final polishing amount. Assuming that

  In this case, the point Q indicating the final polishing amount should be ahead of the point P in the pattern II region to be polished of the logarithmic approximate curve h, and the time required for the additional polishing is as shown in FIG. It becomes Δtq which is the difference between the polishing times tp and tq.

  On the other hand, in the conventional method approximated by the straight line g, the additional polishing time is Δtq1 which is a difference between the polishing time tq1 at the point Q1 indicating the final polishing amount on the straight line g and the time tp at the point P. However, as shown in FIG. 1B, a large error occurs when Δtq1 >> Δtq.

  In the case of FIG. 1B, the setting of the additional polishing time using the conventional approximation method using the straight line g is likely to cause an extremely serious failure pattern that leads to the excessive wafer polishing and the disposal of the product wafer. It can be said. However, since the formula in the present invention uses a calculation formula that is a straight line i that closely approximates the asymptote, the time required for additional polishing close to Δtq can be calculated with considerable accuracy, and the product in additional polishing can be calculated. The risk of disposal due to excessive polishing of the wafer can be sufficiently avoided.

  In the chemical mechanical polishing method of the present invention, the polishing rate or the polishing time, which is a polishing condition, is calculated using the calculation formula described above expressed by the above formula 3 or 4 and the chemical mechanical polishing is calculated based on the calculation rate. Polish. Next, how to use the calculation formula described above will be described.

  As described above, heretofore, when polishing a product wafer, a reference polishing rate has been set using a dummy wafer. The required polishing time is obtained from the reference polishing rate, the actual polishing is performed using the product wafer, the excess or deficiency of the polishing time is corrected based on the polishing result, and a predetermined number of subsequent product wafers are chemically and mechanically polished. It was.

  When chemical mechanical polishing of a predetermined number of product wafers is completed, the polishing rate is reset by dividing the actual polishing amount at that time by the polishing time. A polishing time corresponding to the reset polishing rate is set again, and chemical mechanical polishing of a predetermined number of product wafers is performed with the reset polishing time. In this way, the chemical mechanical polishing of the product wafer is performed while periodically resetting the reference polishing rate.

  The conventional reference polishing rate is based on the premise that the set reference polishing rate does not change during a predetermined number of chemical mechanical polishings. However, in reality, chemical mechanical polishing is performed by applying a polishing pad to a surface to be polished with a predetermined pressing force and polishing with a slurry containing abrasive grains, so that consumables such as the polishing pad are consumed every moment. It is. However, the conventional methods are based on the premise that such consumable materials as the polishing pad are not consumed.

  In FIG. 2, the transition of the actual polishing rate when the polishing rate is taken on the vertical axis and the consumable usage time is taken on the horizontal axis is schematically shown by a curve. Since the polishing rate is such that a consumable material such as a polishing pad is consumed over time, the polishing rate can be schematically shown by a curve that continuously decreases.

  However, as shown by the stepped broken lines in FIG. 2, the reference polishing rate is reviewed step by step at every quality control (QC) in a state where the chemical mechanical polishing is completed for every predetermined number of product wafers. In the method so far, the deviation from the actual polishing rate is small immediately after resetting the reference polishing rate, but when it becomes necessary to review the reference polishing rate by performing a predetermined number of chemical mechanical polishing, The actual polishing rate is lower than the initially set reference polishing rate, and additional polishing processing should be required. The difference in the reference polishing rate is shown as Δr in the figure.

However, since the calculation formula of the present invention is expressed as the following formula 3 as described above,
Polishing rate = {(film thickness before polishing−target film thickness) − (B + C)} / (A × polishing time) Equation 3
In Equation 3, by setting the target film thickness to the film thickness after polishing obtained in actual polishing,
Reference polishing rate = {(film thickness before polishing−film thickness after polishing) − (B + C)} / (A × polishing time) Equation 7
By substituting the values of parameters A, B, and C, the polishing time based on the polishing performance of the previous chemical mechanical polishing, and the actual polishing amount into this equation 7, the previous product The latest polishing rate based on the actual chemical mechanical polishing of the wafer can be calculated as the reference polishing rate. That is, it is possible to always calculate the polishing rate reflecting the decrease accompanying the consumption of the consumable material in real time and to use it as the reference polishing rate.

Such a calculation formula can be expressed as follows. That is,
(Optimal polishing time) _n = {(film thickness before polishing−target film thickness) − (B + C)} / A × (reference polishing rate) _n−1 Expression 8
(Optimal polishing time) _n : Optimal polishing time of the _nth product wafer (Reference polishing rate) _n-1 : Polishing rate obtained from the polishing performance of the n-1st product wafer The optimal polishing time of the product wafer is From now on, the latest polishing rate based on the polishing performance of the product wafer immediately before the product wafer to be subjected to chemical mechanical polishing can be set as the reference polishing rate. For example, as shown in FIG. Chemical mechanical polishing can be performed with an optimal polishing time reflecting the continuous transition of the above.

  Therefore, it is possible to avoid additional polishing after polishing or discard due to excessive polishing. As a result, it is possible to improve the throughput in the chemical mechanical polishing process.

  As described above, when the calculation formula proposed in the present invention is used, the reference polishing rate set once is always used as the reference polishing rate. Without making the assumption that the polishing time is constant, the polishing time can be set with high accuracy by using a highly accurate value based on the previous polishing performance as the reference polishing rate.

  By using the calculation formula in this way, the actual performance of chemical mechanical polishing can always be reflected in the polishing rate. Furthermore, based on the actual chemical mechanical polishing results, the values of the parameters A and B can also be corrected so that the calculation formula follows the actual polishing situation.

  As described above, the parameters A, B, and C can be calculated with higher accuracy even when fixed values are used from the beginning than when the parameters A, B, and C are not used. However, as a means for improving the accuracy, the parameters A and B may be self-corrected.

  Such self-correction of the parameters A and B is performed as follows. That is, regarding the currently performed chemical mechanical polishing, when polishing is completed for each product wafer, the polishing performance is grasped as a point on two axes indicating the polishing time and the polishing amount. For example, as shown in FIG. The number of points of polishing performance increases according to the number of processed product wafers subjected to chemical mechanical polishing, so when a certain number of points is secured, for example, using the least square method, etc., the correlation corresponding to multiple points It is possible to set an appropriate linear expression that increases the number. The values of the parameters A and B can be corrected by changing the parameters A and B of the calculation formula so as to overlap the linear formula. In practice, such an operation can be easily performed by using a calculation function of a computer.

  FIG. 3 shows such a state. That is, a plurality of dots indicating the polishing performance are shown with respect to the target polishing amount indicated by the horizontal broken line. The hit points indicate the actual results of each polishing performed under the polishing conditions calculated by the calculation formula expressed using the parameters A, B, and C set from the design data and the like.

In FIG. 3, as the number of hit points indicating the polishing performance increases, the correlation between the straight line j indicating the calculation formula using the parameters A, B, and C set from the initial design data and the hit point decreases, and the straight line k Shows a straight line having a high correlation coefficient with the hit point of the polishing results. In this case, if the terms corresponding to the parameters A and B in the equation indicating the straight line k indicate the values of α and β, the parameters A and B that were initially set are self-corrected to α and β. Thus, the calculation formula can be changed to a shape that more closely matches the current polishing performance. That is,
Polishing amount = α × polishing rate × polishing time + β + C Expression 6
By appropriately correcting the parameters A and B, a calculation formula is always formed in accordance with the currently performed chemical mechanical polishing situation. When the parameters A, B, and C are fixed, it is assumed that the actual chemical mechanical polishing state is fixed to the chemical mechanical polishing model expressed by the initial calculation formula. In the method of performing self-correction of A and B, it can be said that the chemical mechanical polishing model indicating the actual chemical mechanical polishing situation has been slightly changed.

  Next, handling of parameters A, B, and C in the calculation formula will be described. Parameter A relates to the film properties such as the film quality of the chemical mechanical polishing target. When chemical mechanical polishing of a product wafer is already performed, the chemical mechanical polishing results using such a calculation formula have already been obtained for the same type of product wafer. In some cases, the chemical mechanical polishing is started following the value of the parameter A used there. After the start of chemical mechanical polishing, as described above, the parameter A is set to reflect the actual state of chemical mechanical polishing more by self-correcting the parameter according to the actual polishing state. It can be performed.

  The parameter B relates to the undulation state such as the uneven pattern of the film to be chemically and mechanically polished as described above. As for the parameter B, as in the case of the parameter A, if there is already a chemical mechanical polishing record using the calculation formula, the value used there may be used initially. After that, the parameter B may be corrected in accordance with the actual chemical mechanical polishing state, and the actual chemical mechanical polishing state may be adjusted.

  As described above, the parameter C uses a difference between apparatuses in polishing conditions such as a polishing amount when a plurality of chemical mechanical polishing apparatuses are used, or uses a plurality of polishing heads in the same chemical mechanical polishing apparatus. This represents the machine difference between the heads. Other than chemical mechanical polishing equipment and polishing head, the conditions on the product wafer side are considered to be the same, and it is defined as showing the difference in the polishing situation between the equipment when chemical mechanical polishing is performed. That's fine.

  The parameter C may be set in advance for each apparatus and each head, and the value may be selected and used for each apparatus and head that performs actual chemical mechanical polishing. The parameter C is set as a value unique to the apparatus or the head in this way, and does not change with the polishing performance of the product wafer. The parameter C can be defined as the time difference between the start of polishing time and the actual start of polishing as described above.

  When the parameter C is defined as the time difference, the parameter C may be included in the calculation formula using an addition (+) operator as shown in Formula 3 and the like. Depending on how the parameter C is defined, it may be appropriately included in the calculation formula using a multiplication (×) or division (÷) operator.

  Further, when calculating the parameters A, B, and C, if there is no polishing record in the past due to a new product wafer or a new process, the product wafer design data may be used. Alternatively, past result data of a product wafer similar to the product wafer may be used.

  In new varieties and new processes, it is necessary to newly set parameters as described above, but the parameter A of the calculation formula depends on the film properties such as the film quality to be polished, and the parameter B is the film to be polished. Since it depends on the undulation state of the surface, it has a property that can be determined from design data of the semiconductor device, for example, data such as pattern occupancy, pattern density, and pattern height.

  Since parameters can be determined in advance from design data in this way, there is no need to set conditions for parameter determination, no need to use dummy wafers or pre-polishing, etc. This saves time and effort and reduces man-hours.

  Furthermore, since the condition setting is performed using a chemical mechanical polishing apparatus that is actually used, until now the chemical product mechanical polishing of the actual product wafer can be performed during the condition setting process. could not. However, since it is not necessary to determine the conditions, the production capacity of the chemical mechanical polishing apparatus is not impaired.

  By using the calculation formula described above, unlike the conventional methods, a more accurate reference polishing rate or optimum polishing time can be set in accordance with the actual chemical mechanical polishing situation. Although the chemical mechanical polishing can be performed as described above, the chemical mechanical polishing system that can be used effectively when the chemical mechanical polishing method is performed in the manufacture of a semiconductor device. Will be described below.

  FIG. 4 is a diagram schematically showing a configuration of a chemical mechanical polishing system for performing a chemical mechanical polishing method in manufacturing the semiconductor device of the present invention.

  In the configuration of the chemical mechanical polishing system shown in FIG. 4, the measuring means 10 for measuring the film thickness of the product wafer formed in the process prior to the chemical mechanical polishing process, the chemical machine for performing chemical mechanical polishing. Polishing means 20 and measuring means 30 for measuring the film thickness of the product wafer after chemical mechanical polishing. The measuring means 10 and 30 and the chemical mechanical polishing means 20 are connected to a host computer 40a serving as a management means 40 for the chemical mechanical polishing process so as to exchange data.

  The host computer 40a is connected to a calculation computer 50a serving as a calculation unit 50 that calculates a polishing condition such as a polishing rate or a polishing time of the product wafer of the chemical mechanical polishing unit 20 so as to exchange data. . The computing computer 50a is connected to a data storage means 60 having design data of a semiconductor device such as a semiconductor device such as a product wafer deposition pattern and a target film thickness so as to exchange data.

  Further, in the processing of the computing computer 50a, the computing computer 50a can update the parameter data from outside the clean room whenever necessary by changing or editing the parameters of the calculation formula to be used as necessary. Is connected to a computer 70a as the data updating means 70 so that the data can be updated.

  When the chemical mechanical polishing of the product wafer is performed using the chemical mechanical polishing system shown in FIG. 4, first, the host computer 40a as the management means 40 of the chemical mechanical polishing process is used. The type of product wafer in mechanical mechanical polishing, which process of the semiconductor device manufacturing process corresponds to the chemical mechanical polishing process, which chemical mechanical polishing apparatus to use, etc. are set according to the recipe Done.

  In accordance with a command from the host computer 40a, the arithmetic computer 50a calculates polishing conditions for performing chemical mechanical polishing of the product wafer based on the calculation formula shown by the above-described formula 4. Data necessary for the calculation is selected from the parameter table 51 held in advance in the arithmetic computer 50a.

  In the parameter table 51, as shown in FIG. 4, numerical data of parameters A, B, and C included in the calculation formula are held based on past polishing results and the like. The parameters A and B are individually held as numerical data for each product wafer type and process. The parameter C holds numerical data that is set for each chemical mechanical polishing apparatus when each of the chemical polishing apparatuses has a plurality of polishing heads.

  As described above, when the product wafer to be performed is a new type, or in the case of chemical mechanical polishing in a new process, there is no numerical data based on past polishing results. Then, the storage unit 60 is accessed, and numerical data to be used as the parameters A and B are selected from the design data for each product wafer held in the storage unit 60.

  The target film thickness value required by the calculation formula is obtained from the chemical mechanical polishing recipe of the host computer 40a. Of course, you may make it acquire with reference to the design data which the memory | storage means 60 has.

  At the same time, the film thickness of the product wafer to be chemically mechanically polished is measured for each product wafer using a non-contact type film thickness measuring device 10a or the like constituting the measuring means 10, and the film thickness measurement data is obtained. Obtained by the computing computer 50a through the host computer 40a. Although the accuracy is inferior, in some cases, it is conceivable to access the storage means 60 and use target film thickness data at the time of forming a film to be subjected to chemical mechanical polishing from the design data.

  As for the polishing rate, numerical data can be used if there is past polishing record, but if there is no past polishing record, or if the polishing rate is expected to change due to human factors, quality is limited to the first time. Management (QC) may be performed and set.

In this way, by setting the film thickness before polishing, the target film thickness, the parameters A, B, C, and the polishing rate, the arithmetic computer 50a uses, for example, the following expression 4 as a calculation expression:
Polishing time = {(film thickness before polishing−target film thickness) − (B + C)} / (A × polishing rate) Equation 4
To calculate the polishing time of the first product wafer.

  The host computer 40a obtains the calculated polishing time, and the chemical mechanical polishing apparatus 20a of the specified chemical mechanical polishing means 20 uses the chemical mechanical polishing apparatus 20a with the polishing time according to the chemical mechanical polishing recipe. Polish.

  After the chemical mechanical polishing is finished, the thickness of the product wafer after polishing is measured by a non-contact type film thickness measuring device 30a or the like constituting the measuring means 30, and sent to the host computer 40a. As the chemical mechanical polishing of the first product wafer proceeds, the film thickness of the second product wafer before polishing is also measured by the measuring means 10 and sent to the host computer 40a as described above.

  The polishing time of the second product wafer is used to calculate the reference polishing rate calculated by Equation 7 using the film thickness data after polishing of the first product wafer and the polishing time of the first product wafer by the arithmetic computer 50a. The polishing time of the second product wafer is calculated using Equation 8 from the parameters A, B, C and the film thickness measurement data before polishing the second product wafer.

  Chemical mechanical polishing is actually performed using the calculated polishing time of the second product wafer. In this way, the next product wafer is subjected to chemical mechanical polishing based on the polishing rate calculated from the previous polishing result of the product wafer.

  In the above description, the reference polishing rate has been described based on the polishing rate calculated from the previous polishing result of the product wafer. However, when the product wafer is a new type or polishing in a new process, etc. Since the chemical mechanical polishing of the product wafer is assumed to be unstable, it is assumed that the chemical mechanical polishing is based on the default polishing rate until the chemical mechanical polishing is considered stable. Then, when it is considered that chemical mechanical polishing is stable, the polishing result of the immediately previous product wafer may be used for calculating the polishing time of the next product wafer.

  Furthermore, if only the polishing result of the immediately preceding product wafer is used as the reference polishing rate, in the unlikely event that the polishing of the immediately preceding product wafer is abnormal, there is a sufficient possibility that such an abnormal value will be used as a reference. Therefore, of course, a method of calculating the reference polishing rate by using, for example, an average polishing rate based on the past polishing results of a plurality of product wafers up to the immediately preceding product wafer may be adopted.

  In this way, by using the chemical mechanical polishing system having the above-described configuration, the chemical mechanical polishing process in the manufacture of the semiconductor device is different from the conventional chemical mechanical polishing of the product wafer. It is possible to omit conditions such as dummy wafers or pre-polishing, and to reduce the manufacturing cost of the semiconductor device.

  In addition, by using the chemical mechanical polishing system having the above-described configuration, the parameters A and B that are initially set in the calculation formula used when calculating by the calculation computer 50a are appropriately corrected to appropriate values according to the polishing results. You can also. For example, the chemical mechanical polishing of the product wafer is performed using the parameters A, B, and C initially set in the above description, and the results of polishing are shown in quadrants indicating the polishing amount and the polishing time as two axes as described above. The parameters of the initial calculation formula are changed so that the correlation coefficient with the hit points becomes high.

  The calculation formula may be changed while inputting various values to the parameters A and B using the calculation means 50 such as the calculation computer 50a. In this way, the values of parameters A and B when changed so that the correlation coefficient with the hit points indicating the polishing results are increased are replaced with the values of the parameters A and B set initially, so that the gradual calculation formula is self-corrected. Thus, chemical mechanical polishing more suitable for actual chemical mechanical polishing conditions can be performed.

  As for the self-correction of parameters A and B, if there are a small number of polishing results, there is a possibility of correction based on an abnormal value. Therefore, until a certain amount of polishing results are accumulated, The parameter correction function may be set and canceled freely so as not to perform self-correction.

  In addition, regarding calculation formulas used for calculation of polishing conditions such as polishing time and polishing rate in the computing computer 50a, parameter definitions are changed, or parameter values are completely different depending on the situation in chemical mechanical polishing of another system. It is fully assumed that parameter editing such as changing to a value, adding another parameter, or reducing the parameter is necessary.

  In such a case, in the chemical mechanical polishing system shown in FIG. 4, the parameters included in the calculation formula in the arithmetic computer 50a can be appropriately edited and updated from the computer 70a as the data updating means 70 or the like. Such a computer 70a is connected to a network to which the chemical mechanical polishing apparatus for performing chemical mechanical polishing of a product wafer is connected, or to a backbone network to which such a network is connected. Update processing such as parameter editing may be performed from outside the clean room in which the chemical mechanical polishing apparatus is accommodated.

  If you have such a system configuration, you can grasp the status of chemical mechanical polishing that is currently in progress outside the clean room, enter the clean room each time and check the status of chemical mechanical polishing, or It is not necessary to perform parameter update processing from the host computer 40a, and labor saving and efficiency of such indirect operations can be achieved.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above description, the case relating to the film quality is given as an example of the parameter relating to the film quality, but a parameter indicating the film quality other than the film quality may be used.

  Although the case where the time difference between the start of timing and the start of polishing is shown as an example as a parameter indicating the machine difference between apparatuses, a parameter indicating a machine difference other than this may be used.

  In the configuration of the chemical mechanical polishing system described above, the measuring means and the chemical mechanical polishing means are illustrated and described independently. However, the chemical mechanical polishing apparatus constituting the chemical mechanical polishing means is the measuring means. It is also possible to have a configuration having both.

  Furthermore, although the host computer, the calculation means, and the storage means have been illustrated and described independently, it goes without saying that other means may be included in the apparatus functioning as each means as appropriate. Data exchange between each means may be via a cable or wirelessly. Of course, if necessary, a data storage means such as a transportable CD, DVD, FD or the like may be used.

  The present invention can be used in the field of manufacturing semiconductor devices that perform chemical mechanical polishing.

(A), (b) is explanatory drawing explaining the concept of the calculation formula used by this invention, respectively. It is a figure which shows the transition condition of the polishing rate in chemical mechanical polishing. It is explanatory drawing explaining the correction concept of the parameter which comprises a calculation formula. It is explanatory drawing which shows an example of the chemical mechanical polishing system in one embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Measurement means 10a Film thickness measurement apparatus 20 Chemical mechanical polishing means 20a Chemical mechanical polishing apparatus 30 Measurement means 30a Film thickness measurement apparatus 40 Management means 40a Host computer 50 Calculation means 50a Calculation computer 51 Parameter table 60 Storage means 70 Data Update means 70a Computer P point Q point Q1 point g straight line h logarithmic approximation curve i straight line j straight line k straight line t polishing time t1 polishing time tp polishing time tq polishing time tq1 polishing time Δr Difference in reference polishing rate

Claims (16)

  Using a calculation formula in which a wafer-dependent parameter that depends on a product wafer and an apparatus-dependent parameter that depends on an apparatus that chemically and mechanically polishes the product wafer independently of the wafer-dependent parameter are combined by an operator. A chemical mechanical polishing method, characterized in that the product wafer is chemically mechanically polished by the calculated value.   A chemical mechanical polishing method characterized in that, prior to chemical mechanical polishing of a product wafer, polishing conditions are determined using a product wafer processed before the product wafer without using a dummy wafer.   Prior to chemical mechanical polishing of the product wafer, the product wafer polishing time calculated from a reference polishing rate set using a wafer different from the product wafer, and the product wafer is chemically treated at the reference polishing rate. The chemical mechanical is characterized in that the wafer-dependent parameter depending on the product wafer of the polishing condition calculation formula is determined from the design data without performing the preceding polishing for finding the difference from the actual polishing time when the mechanical polishing is performed. Polishing method. A chemical mechanical polishing method characterized by performing chemical mechanical polishing with a value calculated by a calculation formula using the following parameters;
(A) a parameter indicating the influence of film properties of the film to be polished on the chemical mechanical polishing;
(B) A parameter indicating the influence of the undulation state of the film to be polished on the chemical mechanical polishing. The chemical mechanical polishing method according to claim 4, wherein
A chemical mechanical polishing method, wherein at least one of the parameters included in the calculation formula is corrected in accordance with a polishing state of a product wafer. A chemical mechanical polishing method characterized by performing chemical mechanical polishing with a value calculated by a calculation formula using the following parameters;
(A) a parameter indicating the influence of film properties of the film to be polished on the chemical mechanical polishing;
(B) a parameter indicating the influence of the undulation state of the film to be polished on the chemical mechanical polishing;
(C) A parameter indicating the influence of the machine-to-machine difference of the chemical mechanical polishing apparatus on the chemical mechanical polishing. The chemical mechanical polishing method according to claim 6, wherein
A chemical mechanical polishing method, wherein at least one of the parameters included in the calculation formula is corrected in accordance with a polishing state of a product wafer.   A chemical mechanical polishing method, characterized in that a polishing condition in chemical mechanical polishing of a product wafer is calculated based on a polishing condition of the immediately preceding wafer or a polishing condition of an arbitrary plurality of product wafers up to the immediately preceding wafer. A chemical mechanical polishing system comprising the following means;
(A) a computing means for computing polishing conditions based on the calculation formula;
(B) data storage means for holding parameter data constituting the calculation formula;
(C) data updating means for updating the data of the parameters based on the product wafer polishing results;
(D) measuring means for measuring the polishing performance of the product wafer;
(E) Chemical mechanical polishing means for performing chemical mechanical polishing on the product wafer under the polishing conditions calculated based on the calculation formula. The chemical mechanical polishing system of claim 9, wherein
A chemical mechanical polishing system comprising a plurality of the chemical mechanical polishing means. A method of manufacturing a semiconductor device, comprising a chemical mechanical polishing step for performing the following processing;
(A) A process of setting a reference polishing rate that is set prior to chemical mechanical polishing of a product wafer using the product wafer without using a dummy wafer. A method of manufacturing a semiconductor device, comprising a chemical mechanical polishing step for performing the following processing;
(A) Prior to performing chemical mechanical polishing of a product wafer, the polishing time of the product wafer calculated from a reference polishing rate set using a wafer different from the product wafer, and the reference polishing rate of the product wafer. A process of performing chemical mechanical polishing of the product wafer without performing prior polishing to find a difference from the actual polishing time when chemical mechanical polishing is performed. A method of manufacturing a semiconductor device comprising a step of performing chemical mechanical polishing using a value calculated by a calculation formula using the following parameters;
(A) a parameter indicating the influence of film properties of the film to be polished on the chemical mechanical polishing;
(B) A parameter indicating the influence of the undulation state of the film to be polished on the chemical mechanical polishing. 14. The method of manufacturing a semiconductor device according to claim 13,
A method of manufacturing a semiconductor device, wherein at least one of the parameters included in the calculation formula is corrected according to a polishing state of a product wafer. A method of manufacturing a semiconductor device comprising a step of performing chemical mechanical polishing using a value calculated by a calculation formula using the following parameters;
(A) a parameter indicating the influence of film properties of the film to be polished on the chemical mechanical polishing;
(B) a parameter indicating the influence of the undulation state of the film to be polished on the chemical mechanical polishing;
(C) A parameter indicating the influence of the machine-to-machine difference of the chemical mechanical polishing apparatus on the chemical mechanical polishing. In the manufacturing method of the semiconductor device according to claim 15,
A method of manufacturing a semiconductor device, wherein at least one of the parameters included in the calculation formula is corrected according to a polishing state of a product wafer.

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