JP2002270558A - Method and apparatus for processing, processing system, method for manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately obtain a desired film thickness distribution of a surface side to be processed of a work piece. SOLUTION: A forming unit 4 obtains a target polishing amount distribution based on a film thickness of a wafer 2 measured by a measuring unit 3. The forming unit 4 assumes a control program for controlling a polishing unit 1, and predicts the polishing amount distribution obtained after the wafer 2 is polished by the unit 1 according to the assumed control program. Then, the forming unit 4 predicts the polishing amount of the partial region of the surface to be polished of the wafer 2 according to a relation in which a gradually increasing amount of the polishing amount is reduced while gradually increasing the polishing amount, as a contact phase relative speed between the partial region of the surface to be polished of the wafer 2 and a polishing unit 14 is accelerated. The forming unit 4 compares the predicted polishing amount distribution with the target polishing amount distribution and decides good or not of the assumed control program. The polishing unit 1 polishes the wafer 2 according to the control program decided to be good.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a processing method, a processing apparatus, a processing system, a semiconductor device manufacturing method, and a semiconductor device.

[0002] The present invention relates to a process suitable for use in, for example, flattening and polishing of a semiconductor device (for example, a step of removing an insulating layer or a metal layer on a semiconductor wafer surface) in a method of manufacturing a semiconductor device such as ULSI. The present invention relates to a method, a processing apparatus, a processing system, a semiconductor device manufacturing method, and a semiconductor device. However, the present invention is effective when applied to various processes.

[0003]

2. Description of the Related Art High density semiconductor devices have continued to evolve without showing any limitations.
Methods are being developed. One of them is a multilayer wiring, and technical problems associated with this include flattening a global (relatively large area) device surface and wiring between upper and lower layers.

[0004] Considering the reduction in the depth of focus at the time of exposure accompanying the shortening of the wavelength of lithography, there is a great demand for the accuracy of flattening the interlayer at least in the range of the exposure area. In addition, the requirement for so-called inlay (plug, damascene) for embedding a metal electrode layer is also large for realizing a multilayer wiring, and in this case, it is necessary to remove and planarize an extra metal layer after lamination. An attractive technique for efficient planarization of these large areas (at the die size level) is chemical mechanical polishing. This is because CMP (Ch
This is a polishing process called emical mechanical polishing (Planarization). CMP is a promising candidate for global planarization and electrode formation technology, in a process of removing a surface layer of a wafer by using a chemical action in combination with physical polishing. Specifically, an appropriate tool is used by using an abrasive called a slurry in which abrasive grains (in general, silica, alumina, cerium oxide, etc.) are dispersed in a soluble solvent of the abrasive, such as an acid, an alkali, and an oxidizing agent. (A polishing body such as a polishing pad such as a polishing cloth) pressurizes the wafer surface, and rubs by relative motion to advance polishing.

[0005] This process has many problems as a device process technology. Among them, there are problems such as a large consumption of slurry and pads, and an increase in the size of the apparatus accompanying an increase in the wafer diameter. As a measure to solve these problems, a small-diameter pad system (small pad system) in which polishing is performed while scanning the wafer surface with a pad smaller than the wafer has been proposed. In this method, polishing with a small pad facilitates high-speed, low-load polishing, and can solve the problems of the conventional machine that the flatness (stepping ability) is not sufficient. Can be polished in a form that is always exposed, so that there is an advantage that the polishing process monitor (end point detection) can be easily performed.

In the completion of the CMP step, the remaining film state (thickness) needs to be uniform over the entire surface of the wafer. For this reason, in CMP, the importance of high-speed, low-load polishing, which is very effective in reducing erosion and dishing, is increasing.

Conventionally, the amount of polishing has been predicted in accordance with the Preston equation of the following equation (1). In Equation 1, h is the polishing amount (processing amount) of the polishing target (workpiece), η is the Preston constant, P is the load (pressure applied to the polishing target), and V is the relative contact between the tool and the polishing target. The speed, t, is the polishing time (processing time).

[0008]

H = ηPVt

According to the Preston's equation, the polishing amount h is linearly related to the contact relative speed V. As the contact relative speed increases, the polishing amount h increases in proportion thereto. The Preston's equation of Equation 1 is an empirical rule, but it is said that the polishing amount can be obtained with very high accuracy. It is treated as a basic principle, and has been the basis of any simulation related to polishing. .

However, a paper entitled “Swinging Polishing in Single-wafer Type Equipment (1st Report) -Processing Shape at High-Speed Polishing-” by Une et al. (P. .9, issued on September 25, 2000), contrary to the above-mentioned technical common sense, the relative velocity of contact V
Is relatively low, the polishing amount can be accurately predicted by the Preston's equation. However, when the contact relative speed V exceeds 0.04 km / min, the actual polishing amount is determined by the Preston's equation. Significant deviations from volume have been reported.

In the above-mentioned paper, it has been proposed to introduce the following equation 2 in order to correct the relationship between the relative contact speed and the polishing amount so as to match the actual relationship obtained by experiments.

[0012]

Vc = f (1-Exp [-gV])

In Expression 2, Vc is the contact relative speed after correction, V is the contact relative speed before correction, and f and g are constants.
When the unit of Vc and V is [km / min], f = 0.0
8, g = 15.

The following Equation 3 is obtained by replacing V in Equation 1 with Vc in Equation 2 in Equation 1. Therefore, Expression 3 approximates the actual relationship between the relative contact speed and the polishing amount.

[0015]

H = ηP [f (1-Exp [−gV])] t

[0016]

As reported in the above-mentioned paper, when the contact relative speed is relatively high, the actual polishing amount greatly deviates from the polishing amount obtained by Preston's equation. Therefore, if the object to be polished is polished under the conditions of high speed and low load, which are very advantageous in CMP, the accuracy of the prediction of the polishing amount is reduced. Thus, when the accuracy of polishing amount prediction decreases,
It is difficult to efficiently optimize the polishing conditions (control parameters of the polishing apparatus and the like), and it is not possible to improve the efficiency of the CMP polishing process, and the flatness accuracy is reduced. Such a situation, CM
The same applies to not only P but also other polishing such as polishing of an optical member such as a lens. In addition, the same applies to various processes such as grinding and abrasive grain processing, as long as the process involves friction, even if it is a process other than polishing.

In the above-mentioned paper, it has been reported that, as described above, if the correction formula of Equation 2 is introduced, even if the contact relative speed is high, the calculated polishing amount matches well with the experimental polishing amount. I have. However, the article does not disclose or suggest how to apply such a matter to a polishing method, another processing method, a polishing apparatus, or another processing apparatus.

According to the present invention, it is possible to accurately obtain a desired shape of a work surface of a work or a desired film thickness distribution on a work surface side while skillfully utilizing a phenomenon reported in the above-mentioned article. It is an object of the present invention to provide a processing method and apparatus that can perform the processing.

Another object of the present invention is to provide a processing system capable of improving the efficiency of the processing steps.

Further, according to the present invention, a desired shape of a surface to be processed of a workpiece or a desired film thickness distribution on the side of the surface to be processed can be accurately obtained, and the efficiency of the processing step can be improved. It is intended to provide a processing system.

Further, the present invention provides a method of manufacturing a semiconductor device, which can improve the process efficiency and improve the yield, and can manufacture a semiconductor device at a lower cost than a conventional semiconductor device manufacturing method. It is an object to provide a low-cost semiconductor device.

[0022]

According to a first aspect of the present invention, there is provided a machining method comprising the steps of: applying a load between a tool and a workpiece; By relative movement, using a processing apparatus for processing the workpiece, in a processing method for processing the workpiece, a creation method for creating a control parameter or control program for controlling the processing apparatus or The method includes a step of processing the workpiece by operating the processing apparatus according to a control parameter or a control program created by the creating apparatus. And the creation method includes a prediction step of predicting a processing amount distribution of the processing surface obtained after the processing of the processing object,
The control parameter or the control program is created based on the machining amount distribution predicted in the prediction step. The predicting step includes, for each partial region of the processing surface of the workpiece, a processing amount of the partial region after processing the workpiece, and a parameter of a relative contact speed between the partial region and the tool. As at least one, when at least the contact relative speed is a predetermined speed or more, as the contact relative speed increases, the processing amount increases continuously or stepwise while the increase amount is continuous or stepwise. In accordance with a relationship that gradually becomes smaller or a relationship approximately equivalent to this relationship. In addition, the creation device includes a prediction unit that predicts a processing amount distribution of the processing surface obtained after the processing of the workpiece, and the control parameter based on the processing amount distribution predicted in the prediction step. Alternatively, a control program is created. For each of the partial areas of the surface to be processed of the workpiece, the predicting unit may be configured to parameterize a processing amount of the partial area after processing the workpiece, and a relative speed of contact between the partial area and the tool. As at least one, when at least the contact relative speed is a predetermined speed or more, as the contact relative speed increases, the processing amount increases continuously or stepwise while the increase amount is continuous or stepwise. Relationship that gradually becomes smaller,
Or, it includes means for predicting according to a relation substantially equivalent to this relation.

The processing referred to in the present specification includes, in addition to polishing, grinding, and other types of abrasive processing, various other processing involving friction.

The control parameter or control program corresponds to, for example, a machining program in an NC machine tool, and its format may be appropriately determined depending on the machining device used.

As can be seen from the above-mentioned article, when the contact relative speed is equal to or higher than the predetermined speed, the actual processing amount deviates from the Preston equation of the formula 1, and increases gradually as the contact relative speed increases. The amount gradually decreases, and so to speak, reaches a peak and saturates. In the first aspect, in the prediction step or the prediction means, unlike the Preston's equation, the above-mentioned relation is matched to this phenomenon. Therefore, even if the contact relative speed of the partial region becomes high, the partial region Can be predicted, and as a result, the distribution of the processed amount of the processed surface of the workpiece can be accurately predicted. Therefore, according to the first aspect, since a control parameter or a control program created based on a highly accurate prediction result is used, a desired shape of the work surface of the work or the work surface side The desired film thickness distribution can be accurately obtained.

In the machining method according to the second aspect of the present invention, the tool and the workpiece are relatively moved while applying a load between the tool and the workpiece, thereby machining the workpiece. Using a processing device that performs the processing method of processing the workpiece, according to a control method or a control parameter or control program created by a creation method or a creation device for creating a control parameter or control program for controlling the machining device, The method includes a step of processing the workpiece by operating the processing apparatus. Then, the creating method includes: (a) measuring a shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side; Based on a desired shape or a desired film thickness distribution on the work surface side, a target processing amount which is a work amount distribution of the work surface necessary to obtain the desired shape or the desired film thickness distribution A step of obtaining a distribution; (b) an assumption step for assuming the control parameter or control program; and (c) the processing device processing the workpiece by the processing apparatus according to the control parameter or control program assumed in the estimation step. In a prediction step of predicting a processing amount distribution of the processing surface obtained later, for each partial region of the processing surface of the processing target, processing of the partial region after processing the processing target The amount of the partial area Assuming that the contact relative speed with the tool is one of the parameters, at least when the contact relative speed is equal to or higher than a predetermined speed, the machining amount increases continuously or stepwise as the contact relative speed increases. A relationship in which the amount of increase gradually or gradually decreases,
Or (d) comparing the processing amount distribution predicted in the prediction step with the target processing amount distribution according to a relation substantially equivalent to this relation, and Determining a pass / fail of the assumed control parameter or control program. In addition, (e) a measurement result of a shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side, and a processing result of the processing surface of the processing object. Based on a desired shape or a desired film thickness distribution on the work surface side, a target processing amount which is a work amount distribution of the work surface necessary to obtain the desired shape or the desired film thickness distribution Means for obtaining a distribution; (f) an assuming means for assuming the control parameter or the control program; and (g) the workpiece is machined by the machining apparatus according to the control parameter or control program assumed by the assuming means. Prediction means for predicting the processing amount distribution of the work surface obtained later,
For each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece, the relative speed of contact between the partial region and the tool as one of the parameters, When at least the contact relative speed is equal to or higher than a predetermined speed, the relationship that the amount of processing increases continuously or stepwise as the contact relative speed increases, and the amount of increase gradually or continuously decreases. Or (h) comparing the machining amount distribution predicted by the estimating means with the target machining amount distribution in accordance with a relation substantially equivalent to the relation. Determining means for determining whether the control parameter or the control program assumed in (1) is acceptable.

According to the second aspect, the quality of the assumed control parameters or the control program is determined by comparing the predicted machining amount distribution with the target machining amount distribution. Alternatively, the workpiece can be processed based on the control program, and a desired shape of the processed surface of the processed object or a desired film thickness distribution on the processed surface side can be obtained with higher accuracy.

According to a third aspect of the present invention, there is provided a machining method according to the second aspect, wherein in the case where it is determined in the above-mentioned determining step that the determination is negative, the control parameter or control assumed in the above-mentioned assuming step is used. The program, at least a part of which has already been changed, is assumed, and the assuming step, the predicting step, and the determining step are repeated in this order, and the creating device determines that the determination unit has determined that the program has not been performed. In this case, the control parameter or control program assumed by the assuming means is changed at least in part from the already assumed one, and the assuming means, the predicting means and the determining means Means for repeating the operation in order are included.

According to the third aspect, in the creation method or the creation device, when the determination step or the determination means determines that the determination is not acceptable, the three steps are performed while changing an assumed control parameter or control program. Or 3
Since the operations of the two means are repeated, it is possible to more efficiently optimize the processing conditions. Therefore, according to the third aspect, it is possible to more accurately obtain a desired shape of the processing surface of the processing target or a desired film thickness distribution on the processing surface side.

[0030] In a working method according to a fourth aspect of the present invention, in any one of the first to third aspects, the predicting step or the predicting means may be arranged so that the contact relative speed is less than or equal to the predetermined speed. Predicts the machining amount of the partial area in accordance with the linear relationship between the machining amount and the contact relative speed.

As described above, if the contact relative speed is equal to or lower than the predetermined speed, the processing amount calculated by the Preston's formula of Equation 1 substantially matches the actual processing amount.
In the prediction step or the prediction means, even if the processing amount is predicted according to the linear relationship between the processing amount and the contact relative speed, the processing amount can be accurately predicted. However, even when the contact relative speed is equal to or lower than the predetermined speed, even if an approximation is made in which the increase gradually increases as the contact relative speed increases and the increase gradually decreases, the machining amount can be predicted with sufficient accuracy.

In a working method according to a fifth aspect of the present invention, in any one of the first to fourth aspects, the predetermined speed is 0.04 km / min. This speed is a value obtained as a result of trying several processing conditions.

According to a sixth aspect of the present invention, in the processing method according to any one of the first to fifth aspects, the predicting step or the predicting means performs the calculation in accordance with an expression indicating the relationship to thereby obtain the relevant part. This is to predict the processing amount of the area. As in the sixth aspect, the relationship may be expressed by an equation.

In a working method according to a seventh aspect of the present invention, in the sixth aspect, the expression includes at least one of a logarithmic function, an exponential function, and an n-th order polynomial (2 ≦ n). It is a thing. When expressing the relationship by an expression,
It is preferable to express the relationship by an expression as in the seventh aspect.

According to an eighth aspect of the present invention, in the processing method according to any one of the first to fifth aspects, the predicting step or the predicting means may be performed by referring to a lookup table indicating the relationship. The processing amount of the partial area is predicted. As in the eighth aspect, the relationship may be represented by a look-up table (numerical comparison table).

According to a ninth aspect of the present invention, in the processing method according to any one of the first to eighth aspects, the processing of the workpiece is performed by using an abrasive between the tool and the workpiece. This is chemical-mechanical polishing performed with intervention.
The first to eighth aspects can be applied not only to CMP but also to various other types of polishing such as polishing of a lens or the like. However, the first to eighth aspects are preferably applied to CMP as in the ninth aspect. Can be.

The processing method according to the tenth aspect of the present invention comprises:
In the ninth aspect, the predicting step or the predicting means may include, as the relation, a material forming a work surface of the work, a type of the abrasive, and a material forming a work surface of the tool. And a relationship determined according to at least one of the following.

As a result of research conducted by the present inventor, the relationship between the relative contact speed and the processing amount is determined by the material constituting the processing surface of the workpiece, the type of abrasive, the tool (for example, the processing is polishing). In such a case, it has been found that it depends on the material and the structure (groove structure and the like) constituting the processing surface of the polishing body such as a polishing pad. That is, it has been found that, for example, the constants f, g, and the like in the above equation 3 need to be appropriately changed according to these. That is, even if the material or the like mentioned in the tenth aspect is changed, the tendency of the relationship (the tendency that the amount of processing increases gradually as the contact relative speed increases and the amount of increase gradually decreases) does not change. The degree of the first
It has been found that it may vary depending on the factors exemplified in the zero aspect. For this reason, as in the tenth aspect, by using the relationship determined according to such factors as the relationship, it is possible to more accurately predict the amount of processing, and, consequently, to process the workpiece. A desired shape of the surface or a desired film thickness distribution on the processed surface side can be obtained with higher accuracy.

The processing apparatus according to the eleventh aspect of the present invention comprises:
In a processing apparatus for processing the workpiece by applying a load between the tool and the workpiece while relatively moving the tool and the workpiece, control parameters for controlling the processing apparatus Alternatively, it includes means for processing the workpiece in accordance with a control parameter or a control program created by a creation method or a creation device for creating a control program. Then, the creating method includes a prediction step of predicting a processing amount distribution of the processing surface obtained after the processing of the workpiece, and the control parameter is determined based on the processing amount distribution predicted in the prediction step. Alternatively, a control program is created. The predicting step includes, for each partial region of the processing surface of the workpiece, a processing amount of the partial region after processing the workpiece, and a parameter of a relative contact speed between the partial region and the tool. As at least one, when at least the contact relative speed is a predetermined speed or more, as the contact relative speed increases, the processing amount increases continuously or stepwise while the increase amount is continuous or stepwise. Relationship that gradually becomes smaller,
Or a step of predicting according to a relation substantially equivalent to this relation. In addition, the creation device includes a prediction unit that predicts a processing amount distribution of the processing surface obtained after the processing of the workpiece, and the control parameter based on the processing amount distribution predicted in the prediction step. Alternatively, a control program is created. For each of the partial areas of the surface to be processed of the workpiece, the predicting unit may be configured to parameterize a processing amount of the partial area after processing the workpiece, and a relative speed of contact between the partial area and the tool. As one of the
When at least the contact relative speed is equal to or higher than a predetermined speed, the relationship that the amount of processing increases continuously or stepwise as the contact relative speed increases, and the amount of increase gradually or continuously decreases. Or a means for predicting according to a relation substantially equivalent to this relation.

The processing apparatus according to the twelfth aspect of the present invention comprises:
In a processing apparatus for processing the workpiece by applying a load between the tool and the workpiece while relatively moving the tool and the workpiece, control parameters for controlling the processing apparatus Alternatively, it includes means for processing the workpiece in accordance with a control parameter or a control program created by a creation method or a creation device for creating a control program. And the creation method is as follows:
(A) a measurement result of the shape of the processing surface of the workpiece before or after the processing or the film thickness distribution on the processing surface side, and a desired shape of the processing surface of the processing object or the processing; Obtaining a target processing amount distribution, which is a processing amount distribution of the processing surface required to obtain the desired shape or the desired film thickness distribution, based on a desired film thickness distribution on a surface side; b) an assumed step of assuming the control parameter or control program; and (c) the work surface obtained after the work is processed by the processing apparatus according to the control parameter or control program assumed in the assumed step. In the prediction step of predicting the processing amount distribution of, for each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece, the partial region and Contact relative speed with the tool As one of the parameters, if at least the contact relative speed is higher than a predetermined speed,
Predicting according to a relationship in which the amount of processing increases continuously or stepwise as the contact relative speed increases, and the amount of increase increases continuously or stepwise, or according to a relationship substantially equivalent to this relationship. And (d)
A determining step of comparing the processing amount distribution predicted in the prediction step with the target processing amount distribution to determine whether the control parameter or the control program assumed in the estimation step is acceptable. In addition, (e) a measurement result of a shape of a processing surface of the workpiece before or after processing or a film thickness distribution on the processing surface side, and a processing result of the processing surface of the processing object. Based on a desired shape or a desired film thickness distribution on the work surface side, a target processing amount which is a work amount distribution of the work surface necessary to obtain the desired shape or the desired film thickness distribution Means for obtaining a distribution; (f) an assuming means for assuming the control parameter or the control program; and (g) the workpiece is machined by the machining apparatus according to the control parameter or control program assumed by the assuming means. A predicting means for predicting a processing amount distribution of the processing surface obtained later, wherein, for each partial region of the processing surface of the processing object, processing of the partial region after processing the processing object The quantity The relative contact speed between the tool and the tool as one of the parameters, at least when the relative contact speed is equal to or higher than a predetermined speed, the machining amount increases continuously or stepwise as the relative contact speed increases. A predicting means including a predicting means in accordance with a relationship in which the increase amount is gradually or gradually reduced, or a relationship substantially equivalent to this relationship, and (h) a machining amount distribution predicted by the predicting means. Determining means for comparing the target machining amount distribution with the target machining amount distribution to determine whether the control parameter or the control program assumed in the assumption step is good or not.

A processing apparatus according to a thirteenth aspect of the present invention comprises:
In the twelfth aspect, in the creation method, when it is determined to be no in the determination step, at least a part of a control parameter or a control program assumed in the assumption step is changed to that already assumed. Then, the assuming step, the predicting step and the determining step are repeated in this order, and when the creating device is determined to be no by the determining means, the control parameter or the control parameter assumed by the assuming means. The control program includes at least a part of a control program that has already been assumed, and includes means for causing the estimating means, the predicting means, and the determining means to repeat operations in this order.

The processing apparatus according to the fourteenth aspect of the present invention
In any one of the eleventh to thirteenth aspects, the predicting step or the predicting means may include a linear relationship between the processing amount and the contact relative speed when the contact relative speed is equal to or less than the predetermined speed. , The processing amount of the partial area is predicted.

The processing apparatus according to a fifteenth aspect of the present invention comprises:
In any one of the eleventh to fourteenth aspects, the predetermined speed is 0.04 km / min.

The processing apparatus according to the sixteenth aspect of the present invention comprises:
In any one of the eleventh to fifteenth aspects, the prediction step or the prediction means predicts a processing amount of the partial region by performing an operation according to an expression indicating the relationship.

The processing apparatus according to the seventeenth aspect of the present invention comprises:
In the sixteenth aspect, the formula includes at least one of a logarithmic function formula, an exponential function formula, and an n-th order polynomial (2 ≦ n).

The processing apparatus according to the eighteenth aspect of the present invention
In any one of the eleventh to fifteenth aspects, the prediction step or the prediction means predicts a processing amount of the partial region by referring to a lookup table indicating the relationship.

A processing apparatus according to a nineteenth aspect of the present invention comprises:
In any one of the eleventh to eighteenth aspects, the processing of the workpiece is chemical mechanical polishing performed with an abrasive interposed between the tool and the workpiece.

The processing apparatus according to the twentieth aspect of the present invention comprises:
In the nineteenth aspect, the predicting step or the predicting means may include, as the relation, a material forming a work surface of the work, a type of the abrasive, and a material forming a work surface of the tool. And a relationship determined according to at least one of the following.

According to the eleventh to twentieth aspects, the processing methods according to the first to tenth aspects can be respectively realized.

The processing apparatus according to the twenty-first aspect of the present invention comprises:
In the nineteenth or twentieth aspect, machining is performed under the condition that a part of the workpiece is not in contact with the tool for at least a certain time during machining.

For example, when the entire surface of the surface to be processed of a workpiece such as a wafer is constantly brought into contact with a tool, and both are rotated at the same rotational speed in the same direction (constant forward rotation), the workpiece is processed. Since the average contact relative speed for one rotation is constant over the entire processing surface, uniform processing can be realized by keeping the pressure constant over the entire surface.

However, in practice, a uniform processing amount is often not realized due to various influences (such as wafer warping and holding method). Further, in some cases, it is required that the processing amount is not uniform over the entire surface in consideration of the initial film thickness difference of the film to be processed.

In this regard, as in the twenty-first aspect, if the workpiece is processed under the condition that a part of the workpiece is not in contact with the tool for at least a certain time during the processing,
This is preferable because a uniform processing amount can be obtained over the entire surface to be processed of the workpiece.

The twenty-first aspect can be achieved, for example, by employing a so-called small pad system, which will be described later, or by adopting a so-called large pad system, by protruding a tool from a workpiece. Can be achieved.

The processing apparatus according to the twenty-second aspect of the present invention comprises:
In any one of the nineteenth to twenty-first aspects, the diameter of the tool is smaller than the workpiece.

If a system called a small pad is adopted in CMP as in the twenty-second embodiment, the advantages of the twenty-first embodiment can be obtained, and the size of the apparatus can be reduced. Since it is possible to perform processing in which a part of the processing surface of the workpiece is always exposed, the polishing process monitor (end point detection) can be easily performed. Not only that, high-speed and low-load processing is facilitated, and the flatness (the ability to eliminate a step) can be increased. And even if it speeds up, the above-mentioned advantage by the high prediction accuracy of the processing amount can be obtained. That is, according to the twenty-second aspect, while the advantages of the conventionally recognized small pad system are sufficiently obtained, the adverse effects associated with the high speed operation are eliminated, and an extremely great advantage is obtained.

A processing apparatus according to a twenty-third aspect of the present invention comprises:
In any one of the nineteenth to twenty-first aspects, the diameter of the tool is substantially the same as or larger than the workpiece.

As described above, it is preferable to employ the small pad system, but as in the twenty-third embodiment,
A method called large pad in CMP may be adopted. Even in the large pad system, the merit of high speed is great, and at least the accuracy of predicting the amount of processing on a partial region having a high contact relative speed on the surface to be processed is increased, so that the advantage is also obtained.

The processing apparatus according to the twenty-fourth aspect of the present invention comprises:
In any one of the nineteenth to twenty-third aspects, a linear relationship approximation is not established between the relative contact speed between the workpiece and the tool and the machining amount of the workpiece, and a non-linear relationship is obtained. That is, processing is performed under high-speed processing conditions.

In the case of a processing apparatus that performs processing under high-speed processing conditions, the prediction of the processing amount by the Preston's formula of the above equation 1 greatly deviates from the actual processing amount. In particular, the accuracy of predicting the amount of processing is significantly improved, and a desired shape of the processing surface of the workpiece or a desired film thickness distribution on the processing surface side can be obtained with higher accuracy.

The processing apparatus according to the twenty-fifth aspect of the present invention comprises:
In any one of the nineteenth to twenty-fourth aspects, the maximum value of the relative contact speed between the workpiece and the tool is 0.1.
Processing is performed under processing conditions of not less than km / min.

Since the prediction of the machining amount by the Preston's formula of the above equation 1 greatly deviates from the actual machining amount, in the case of the machining apparatus as in the twenty-fifth embodiment, especially, the accuracy of the machining amount prediction is remarkably improved. A desired shape of the surface to be processed of the workpiece or a desired film thickness distribution on the side of the surface to be processed can be obtained with higher accuracy.

A machining system according to a twenty-sixth aspect of the present invention is configured to machine a workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece. A processing device for measuring the shape of the processed surface of the workpiece before or after processing or a film thickness distribution on the processed surface side, and performing the processing based on a measurement result by the measuring device. A creating device for creating a control parameter or a control program for controlling the device, wherein the machining device is configured to machine the workpiece according to the control parameter or the control program created by the creating device. .

According to the twenty-sixth aspect, since the measuring device, the forming device, and the processing device constitute a processing system as a whole, measurement, control parameter creation, and processing can be performed consistently. The efficiency of the polishing process as a whole can be improved.

A machining system according to a twenty-seventh aspect of the present invention is the processing system according to the twenty-sixth aspect, wherein the measurement result is input from the measuring device to the creating device, and the control parameter or control created by the creating device is provided. The input of the program to the processing apparatus is performed automatically or in response to a command.

As in the twenty-seventh aspect, when the input of the measurement result or the input of the control parameter or control program is performed automatically or in response to a command, the burden on the operator can be reduced. As a result, the efficiency of the polishing process as a whole can be further improved. In the twenty-seventh aspect, measurement, creation of control parameters, and processing can be completely automated as a whole.

The machining system according to a twenty-eighth aspect of the present invention is the machining system according to the twenty-sixth or twenty-seventh aspect, wherein: (a) the shape of the surface to be machined of the workpiece before or after machining; The film thickness distribution on the processing surface side, the measurement result by the measuring device, and the desired shape of the processing surface of the workpiece input by the input unit or the desired film thickness distribution on the processing surface side Means for obtaining a target machining amount distribution which is a machining amount distribution of the surface to be machined necessary to obtain the desired shape or the desired film thickness distribution, based on (C) predicting a processing amount distribution of the processing surface obtained after the processing of the workpiece by the processing apparatus according to the control parameter or the control program assumed by the predicting means. Measuring means, for each partial area of the processing surface of the workpiece, the processing amount of the partial area after processing the workpiece, the relative contact speed between the partial area and the tool As one of the parameters, when at least the contact relative speed is equal to or higher than a predetermined speed, as the contact relative speed increases, the processing amount increases continuously or stepwise while the increase amount is continuous or stepwise. Prediction means including means for predicting according to a relationship that gradually becomes smaller, or a relationship approximately equivalent to this relationship,
(D) comparing the machining amount distribution predicted by the predicting unit with the target machining amount distribution to determine whether the control parameter or the control program assumed in the supposed stage is good or bad. .

According to a twenty-ninth aspect of the present invention, in the processing system according to the twenty-eighth aspect, when the creating device determines that the determination is negative, the control device or the control parameter assumed by the assuming device is determined. The control program includes at least a part of a control program that has already been assumed, and includes means for causing the estimating means, the predicting means, and the determining means to repeat operations in this order.

[0069] In the machining system according to a thirtieth aspect of the present invention, in the twenty-eighth aspect or the twenty-ninth aspect, the predicting means determines that the processing amount and the processing amount are equal to each other when the contact relative speed is equal to or less than the predetermined speed. The processing amount of the partial region is predicted according to a linear relationship with the contact relative speed.

The processing system according to the thirty-first aspect of the present invention is the processing system according to any one of the twenty-eighth to thirty-third aspects,
The predetermined speed is 0.04 km / min.

A processing system according to a thirty-second aspect of the present invention is the processing system according to any one of the twenty-eighth to thirty-first aspects, wherein
The prediction means predicts the processing amount of the partial area by performing an operation according to an expression indicating the relationship.

In a machining system according to a thirty-third aspect of the present invention, in the thirty-second aspect, the expression includes at least one of a logarithmic function, an exponential function, and an n-th order polynomial (2 ≦ n). It is a thing.

A processing system according to a thirty-fourth aspect of the present invention is the processing system according to any one of the twenty-eighth to thirty-first aspects, wherein
The prediction means predicts the processing amount of the partial area by referring to a lookup table indicating the relationship.

The working system according to the thirty-fifth aspect of the present invention is the machining system according to any one of the twenty-sixth to thirty-fourth aspects,
The processing of the workpiece is chemical mechanical polishing performed with an abrasive interposed between the tool and the workpiece.

According to a thirty-sixth aspect of the present invention, in the processing system according to the thirty-fifth aspect, the predicting means includes, as the relation, a material constituting a work surface of the work,
A relationship determined according to at least one of a type of the abrasive and a material and a structure constituting a processing surface of the tool is used.

According to a thirty-seventh aspect of the present invention, in the machining system according to the thirty-fifth or thirty-sixth aspect, the machining apparatus is configured such that a part of the workpiece is brought into contact with the tool for at least a certain time during machining. Processing is performed under conditions that are not set.

The processing system according to the thirty-eighth aspect of the present invention is the processing system according to any one of the thirty-fifth to thirty-seventh aspects, wherein
The diameter of the tool is smaller than the workpiece.

A machining system according to a thirty-ninth aspect of the present invention is the machining system according to any one of the thirty-fifth to thirty-seventh aspects, wherein the diameter of the tool is substantially the same as or larger than the workpiece.

The processing system according to the fortieth aspect of the present invention is the processing system according to any one of the thirty-fifth to thirty-ninth aspects, wherein
The processing apparatus is configured to perform processing under high-speed processing conditions in which a linear relation approximation is not established between the relative contact speed between the workpiece and the tool and the processing amount of the workpiece, and a non-linear relationship is obtained. Is what you do.

The processing system according to the forty-first aspect of the present invention is the processing system according to any of the thirty-fifth to forty-fifth aspects, wherein
The processing apparatus is configured to perform processing under a processing condition in which a maximum value of a relative contact speed between the workpiece and the tool is 0.1 km / min or more.

According to the twenty-eighth to forty-first aspects, the advantages of the twenty-sixth or twenty-seventh aspect are obtained, and at the same time, the advantages of the twelfth to twenty-fifth aspects are obtained.

A semiconductor device manufacturing method according to a forty-second aspect of the present invention uses the processing apparatus according to any one of the eleventh to twenty-fifth aspects or the processing system according to any one of the twenty-sixth to forty-first aspects. And a step of flattening the surface of the semiconductor wafer. This 42nd
According to the aspect, since the process efficiency can be improved and the yield is improved, the semiconductor device can be manufactured at a lower cost than the conventional semiconductor device manufacturing method.

A semiconductor device according to a forty-third aspect of the present invention is manufactured by the semiconductor device manufacturing method according to the forty-second aspect. According to the forty-third aspect, a low-cost semiconductor device can be provided.

[0084]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A processing method, a processing apparatus, a processing system, a semiconductor device manufacturing method, and a semiconductor device according to the present invention will be described below with reference to the drawings.

Each of the embodiments described below relates to a processing method, a processing apparatus, and a processing system (that is, a polishing method, a polishing apparatus, and a polishing system for CMP) applied to chemical mechanical polishing as an example of processing. Things. However, the present invention can be applied to a processing method, a processing apparatus, a processing system, and the like for other polishing, grinding, other abrasive processing, and other various processing. It goes without saying that it can be appropriately modified according to the desired processing content.

[Experiment]

Prior to the description of the embodiments of the present invention, the results of experiments performed by the present inventors will be described.

The inventor conducted an experiment similar to the experiment disclosed in the above-mentioned article, and obtained the experimental results shown in FIG. In this experiment, using a small pad type CMP polishing apparatus, the slurry was silica-based SS25, the tool (polishing member) was a disk tool, and the same wafer as in the experiment disclosed in the above-mentioned paper was polished. The same measurements were performed as in the experiments disclosed in the article. However, in order to know the situation under higher speed conditions, the tool was rotated at 500 rpm without rotating the wafer.
And polished. In FIG. 1, the polishing amount (corrected predicted polishing amount) calculated according to the above-described correction formula of Equation 3 is also indicated by a solid line.

In the case of FIG. 1 as well, the phenomenon that the actual polishing amount is saturated with an increase in the contact relative speed appears as in the content disclosed in the above-mentioned paper. And
In the case of FIG. 1 as well, the polishing amount (processing amount) calculated according to the correction formula of the above equation 3 well matches the actual polishing amount.

[First Embodiment]

Next, a polishing system according to the first embodiment of the present invention will be described.

FIG. 2 is a schematic configuration diagram schematically showing a polishing system according to the first embodiment of the present invention. FIG.
Is a schematic flowchart showing the operation of the polishing system. FIG. 4 is a schematic flowchart showing the processing content of step S2 in FIG.

The polishing system according to the present embodiment is similar to the polishing system shown in FIG.
As shown in FIG. 1, a polishing apparatus 1 that performs chemical mechanical polishing on a process wafer 2 as a polishing target (workpiece).
And a measuring device 3 for measuring the film thickness distribution (or the shape of the polished surface of the wafer 2) on the polished surface (processed surface) side of the wafer 2 before or after polishing, and for controlling the polishing apparatus 1. Creating device 4 for creating control parameters or control programs
And a transfer device 5 for transferring the wafer 2 between the measurement device 3 and the wafer holder 12 or the like.

The polishing apparatus 1 includes a polishing member (tool) 11,
A wafer holder 12 for holding the wafer 2 below the polishing member 11, and a supply path (not shown) formed in the polishing member 11;
A polishing agent supply unit (not shown) for supplying a polishing agent (slurry) between the wafer 2 and the polishing member 11 via a control unit, a control unit 15 including a computer, and the like. A drive unit 16 for driving a motor, an input unit 17 such as a keyboard, a display unit 18 such as a CRT, and a floppy disk drive 19 for reading and writing data from and to a floppy (registered trademark) disk as a recording medium.
And

The polishing member 11 is provided with a polishing body (polishing pad) 14 on the lower surface of a polishing platen 13. As shown by arrows in FIG. 2 by a mechanism (not shown) using an electric motor as an actuator. , Can be rotated, moved up and down, and swung (reciprocated) right and left. Polishing body 1
For example, a sheet-like foamed polyurethane or a non-foamed resin having a groove structure on the surface can be used as 4.

The wafer 2 is held on the wafer holder 12, and the upper surface of the wafer 2 is the surface to be polished. The wafer holder 12 is driven by a mechanism (not shown) using an electric motor as an actuator, as shown by an arrow in FIG.
It can rotate.

In the present embodiment, the diameter of the polishing member 11 is made smaller than the diameter of the wafer 2, so that the footprint of the entire apparatus is reduced, and high-speed and low-load processing is facilitated. However, in the present invention, the diameter of the polishing member 11 may be equal to or larger than the diameter of the wafer 2. Even in these cases, a part of the wafer 2 is temporarily protruded by the swing of the polishing member 11 during the polishing, and the part of the wafer 2 is kept at least for a certain period during the polishing.
Can be polished under conditions not in contact with the substrate. However, when the diameter of the polishing member 11 is equal to or larger than the diameter of the wafer 2, it is not always necessary to protrude a part of the wafer 2.

Here, polishing of the wafer 2 by the polishing apparatus 1 will be described. The polishing member 11 swings while rotating, and is pressed against the upper surface of the wafer 2 on the wafer holder 12 with a predetermined pressure. The wafer holder 12 is rotated so that the wafer 2 is also rotated, and a relative motion is performed between the wafer 2 and the polishing member 11. In this state, the polishing agent is supplied from the polishing agent supply section between the wafer 2 and the polishing member 11, diffuses between them, and polishes the polished surface of the wafer 2. That is, the mechanical polishing by the relative movement of the polishing member 11 and the wafer 2 and the chemical action of the abrasive act synergistically to perform good polishing.

The control unit 15 performs the above-described polishing operation in accordance with the control parameters or the control program supplied from the preparation device 4 via the drive unit 16 to realize the above-described polishing operation.
Motors for rotating, vertically moving and swinging the polishing member 11,
It controls a motor for rotating the wafer holder 12 and controls other parts (not shown). Further, in the present embodiment, the control unit 15 also functions as an overall control unit of the entire polishing system, and generates the preparation device 4, the measurement device 3, and the transport device 5.
Are also controlled by the control unit 15.

The input section 17 is used by an operator to input various commands and necessary data. The display unit 18 displays an input guidance display and the like under the control of the control unit 15. The floppy disk drive 19 reads the control parameters and the like from the floppy disk on which the control parameters or the control program is recorded and supplies them to the control unit 15 as necessary.

If the film on the surface to be polished of the wafer 2 is an SiO ₂ film or the like, for example, an optical interference type film thickness measuring device can be used as the measuring device 3. If the film is a metal film such as Cu, for example, an electric resistance type film thickness measuring device can be used. In the present embodiment, a film thickness measuring device capable of measuring a film thickness distribution is used as the measuring device 3.

The creation device 4 includes an arithmetic processing unit 20 including a computer, an input unit 21 such as a keyboard, a CRT,
And the like, a floppy disk drive 23 for reading and writing data from and to a floppy disk,
It has. At the time of introduction, the program recorded on the floppy disk is installed on a hard disk (not shown) via the drive 23, so that the arithmetic processing unit 20 can execute the processing shown in FIG. Therefore, this floppy disk is
And a medium for recording a program for executing the processing shown in FIG. Such a program can be transmitted to the creation device 4 via the Internet or the like. This applies to each of the embodiments described later.
Needless to say, the arithmetic processing unit 20 and the control unit 15 may be configured by the same computer.

Incidentally, the recording medium is not limited to a floppy disk.
R, MO, DVD and the like may be used. In this case, it goes without saying that a drive corresponding to the recording medium is used instead of the drive 23. This is the same for the floppy disk drive 19 described above and each embodiment described later.

Next, the operation of the polishing system according to the present embodiment will be described with reference to FIG. In this polishing system, when the operation is started, the following operation is performed under the control of the control unit 15. First, the transfer device 5 transfers the wafer 2 from a predetermined place to the measuring device 3, and thereafter, the measuring device 3
Measures the film thickness distribution on the polished surface side of the wafer 2, and the measurement result is automatically input to the arithmetic processing unit 20 of the creation device 4 (step S1). When the measurement by the measuring device 3 is completed, the transfer device 5 removes the wafer 2 on which the measurement has been completed.
The wafer is transferred from the measuring device 3 onto the wafer holder 12 of the polishing device 1. Next, the creating device 4 creates the control program or control parameter based on the initial film thickness distribution as a measurement result from the measuring device 3, and automatically outputs the created control program or control parameter to the control unit 15. (Step S2). Thereafter, the control unit 15 performs control according to the input control program or control parameter,
The polishing apparatus 1 polishes the surface to be polished of the wafer 2 (Step S3). When the polishing is completed, the wafer 2 is transferred to the transfer device 5
Is carried to a predetermined place, and a series of operations is completed.

Here, the processing content of step S2 in FIG. 3 will be described with reference to FIG.

Prior to the processing in step S2, the values of parameters (referred to as fixed parameters) that are fixedly handled when creating a control program or control parameters in the polishing conditions, and the control programs or control parameters in the polishing conditions. The type of a parameter whose value is to be adjusted at the time of creation (referred to as an adjustment parameter) is input by the input unit 21 in advance. These are stored in an internal memory (not shown) of the arithmetic processing unit 20 (not shown). The fixed parameters include, for example, the type of the film on the surface to be polished of the wafer 2, the type of slurry, the type of the material of the polishing body 14, the structure of the polishing body 14 (eg, groove pattern), the diameter of the polishing body 14, and the diameter of the wafer 2. And the like. The adjustment parameters include, for example, the number of rotations of the polishing member 11, the number of rotations of the wafer 2, and the swing pattern (speed, stroke,
Swing start position). Among the adjustment parameters, for example, the rotation speed of the polishing member 11 and the rotation speed of the wafer 2 may be input as fixed parameters in advance.

Prior to the processing in step S2, for example, the contact relative speed and the polishing amount (processing amount) determined in advance by experiments or the like are determined in accordance with the type of slurry, the material and structure (groove structure, etc.) of the polishing body 14, and the like. Is stored in the internal memory of the arithmetic processing unit 20 in the form of an expression such as Expression 3 or a look-up table. This relationship is
"At least when the contact relative speed is equal to or more than a predetermined speed, the polishing amount increases continuously or stepwise while the contact relative speed increases, and the amount of increase gradually decreases continuously or stepwise. Relationship or a relationship substantially equivalent to this relationship ". At this time, the predetermined speed may be, for example, 0.04 km / min. When the contact relative speed is equal to or less than the predetermined speed, the polishing amount may be predicted according to a linear relationship between the polishing amount and the contact relative speed. The expression preferably includes at least one of an exponential function expression, a logarithmic function expression, and an n-th order polynomial (2 ≦ n).

When the process of step S2 is started, the arithmetic processing unit 20 of the creating device 4 first obtains the measurement result of the film thickness distribution sent from the measuring device 3, and acquires the measurement result.
0 is stored in the internal memory (step S11).

Next, the arithmetic processing unit 20 calculates a target polishing amount distribution based on the measurement result of the film thickness distribution (step S12). The target polishing amount distribution is a polishing amount distribution of the polished surface required to obtain a desired film thickness distribution.

Next, the arithmetic processing unit 20 sets (assumes) the value (or set of values) of the adjustment parameter to a certain value (or set of values) (step S13). This assumes control parameters or control programs.

Thereafter, the arithmetic processing unit 20 sets one of the individual partial areas of the surface to be polished of the wafer 2 as a processing target (step S14). Next, based on the fixed parameters stored in the internal memory and the values of the adjustment parameters set in step S13, the arithmetic processing unit 20 determines the pressure and contact of the partial area set in step S14. The relative speed and the polishing time (contact time) are calculated, and using them, the polishing amount is calculated (estimated) according to, for example, Equation 3 selected according to the fixed parameter stored in the internal memory. This step S15 corresponds to a predicting means for predicting the polishing amount of the partial region.

Next, the arithmetic processing section 20 determines whether or not the calculation of the polishing amount has been completed for all the partial regions of the surface to be polished of the wafer 2 (step S16). If not, the process returns to step S14. On the other hand, if the processing has been completed, the process proceeds to step S17. In this case, the polishing amount distribution of the surface to be polished of the wafer 2 is obtained. Steps S <b> 14 to S <b> 16 correspond to a prediction unit that predicts a polishing amount distribution of the surface to be polished of the wafer 2.

In step S17, the arithmetic processing unit 20
Is set in step S13 by comparing the predicted polishing amount distribution of the surface to be polished of the wafer 2 with the target polishing amount distribution calculated in step S12 to determine whether or not a predetermined standard is satisfied. The quality of the latest adjustment parameter value (or set of values), that is, the quality of the assumed control parameter or control program is determined.

If it is determined that the answer is NO in step S17, the process returns to step S13. At this time, in step S13, a value that is at least partially changed from the value (or set of values) set in step S13 up to the previous time is set.

On the other hand, if it is determined to be good in step S17, the arithmetic processing unit 20 stores the latest adjustment parameter value (or set of values) set in step S13 and, if necessary, in the internal memory. Based on the fixed parameters that are required, to achieve the polishing conditions indicated by them,
A control parameter or control program for controlling the polishing apparatus 1 is created and sent to the control unit 15 of the polishing apparatus 1 (Step S18). Thus, step S in FIG.
The process of No. 2 ends.

The polishing apparatus 1 performs polishing under high-speed polishing conditions where a linear relationship approximation is not established between the relative contact speed between the wafer 2 and the polishing body 14 and the polishing amount of the wafer 2 and a non-linear relationship is established. May be performed. In addition, the polishing apparatus 1 has a maximum contact relative speed between the wafer 2 and the polishing body 14 of 0.1 k.
Polishing may be performed under polishing conditions of not less than m / min.

According to the present embodiment, in step S15 in FIG. 4, the forming apparatus 4 determines the polishing amount of the partial region of the surface to be polished of the wafer 2 in accordance with the relationship between the relative contact speed and the polishing amount described above. Making predictions. Therefore, the polishing amount of the partial region of the surface to be polished of the wafer 2 can be accurately predicted. Therefore, steps S14 to S1 in FIG.
The accuracy of the prediction of the polishing amount distribution of the surface to be polished of the wafer 2 performed in 6 is also improved. Therefore, it is possible to efficiently optimize the polishing conditions (control parameters of the polishing apparatus and the like). As a result, overall process efficiency can be improved. Moreover, since the polishing apparatus 1 is operated in accordance with the control parameters or control program created by the creating apparatus 4, a desired film thickness distribution of the wafer 2 can be obtained with high accuracy, and high flatness can be secured. .

Further, according to the present embodiment, since the measuring device 3, the preparing device 4 and the polishing device 1 constitute a polishing system as a whole, measurement, preparation of control parameters and the like and polishing are performed consistently. Thus, the efficiency of the polishing process as a whole can be improved.

Further, according to the present embodiment, the input of the measurement result from the measuring device 3 to the creating device 4 and the input of the control parameters or the control program created by the creating device 4 to the polishing device 1 are: Since the operation is performed automatically, the burden on the operator is eliminated, and the efficiency of the polishing process as a whole can be further improved. Each of the inputs can be performed in accordance with a command from the input unit 17 or 21.

[Second Embodiment]

FIG. 5 is a schematic flowchart showing the operation of the polishing system according to the second embodiment of the present invention.
In FIG. 5, steps that are the same as or correspond to the steps in FIG. 3 are given the same reference numerals, and duplicate descriptions thereof will be omitted.

This embodiment is different from the first embodiment only in the following points. That is, after the polishing step (Step S3), the same film thickness measurement as in Step S1 is performed (Step S4), and the measurement result is compared with a desired film thickness distribution on the surface to be polished of the wafer 2 or a desired film thickness on the surface to be polished. It is determined whether or not the polishing is performed again by comparing the shape with the shape (step S5). When the polishing is performed again, the process returns to step S2. When the polishing is not performed again, a series of operations is ended.

According to the present embodiment, steps S4, S
5, the steps S2 to S4 can be repeated again when the shape or thickness distribution of the polished surface of the wafer 2 once polished does not have the desired accuracy. Thus, a desired shape of the surface to be polished of the wafer 2 or a desired film thickness distribution on the surface to be polished can be more accurately obtained.

[Third Embodiment]

The polishing apparatus according to the third embodiment of the present invention separates the polishing apparatus 1 of the polishing system according to the first embodiment shown in FIG. Although modified, the block diagram schematically illustrating the schematic configuration of the polishing apparatus according to the present embodiment is the same as the polishing apparatus 1 in FIG. Therefore, FIG. 2 is also referred to in the description of the present embodiment.
However, in the present embodiment, the control unit 15 and the arithmetic processing unit 2
Lines between 0 are removed.

The polishing apparatus according to the present embodiment is, as described later, inputted from the floppy disk drive 19 via the floppy disk or the input unit 17.
Is configured to perform a polishing operation in accordance with a control parameter or a control program input from.

First, an example will be described in which the forming apparatus 4 of the polishing system according to the first embodiment shown in FIG. 2 is modified so as to be separated and independent from the measuring apparatus 3 and the polishing apparatus 1. . FIG. 6 is a schematic flowchart showing the operation of the modified creation apparatus. This modified preparation apparatus is modified so that the preparation apparatus 4 of the polishing system according to the first embodiment shown in FIG. 2 is separated and independent from the measurement apparatus 3 and the polishing apparatus 1. The block diagram schematically illustrating the schematic configuration of the modified creation device is the same as the creation device 4 in FIG.
Therefore, in the description of this modified creation device,
Please refer to FIG. However, from the measuring device 3 to the arithmetic processing unit 2
The line to zero is also removed.

When the modified production apparatus starts operation, as shown in FIG.
To display an input guidance display to urge the operator to input the types of the above-described fixed parameters and the above-described adjustment parameters (step S21). Input unit 2
When these are input through the operation unit 1, the arithmetic processing unit 20
The display unit 22 is controlled to display an input guidance display, and prompts the operator to input a film thickness distribution of the wafer 2 measured by the measuring device 3 (step S22). When the film thickness distribution is input via the input unit 21, the arithmetic processing unit 20
Steps S23 to S28 respectively corresponding to steps S12 to S17 in FIG. 4 are performed.

In the case of YES in step S28, the arithmetic processing unit 20 determines the predicted polishing amount distribution of the surface to be polished of the wafer 2 used in the determination in step S28,
Based on the initial film thickness distribution input in Step 2, the predicted film thickness distribution of the polished surface of the wafer 2 is calculated (Step S).
29). After that, the arithmetic processing unit 20 displays the predicted polishing amount distribution, the initial film thickness distribution, and the predicted film thickness distribution on the display unit 2.
2 is displayed (step S30).

Next, the arithmetic processing section 20 creates a control parameter or a control program for controlling the polishing apparatus 1 in the same manner as in step S18 in FIG. To a floppy disk (not shown). With this, the operation of the creating apparatus according to the present example ends. The operator takes out the floppy disk from the drive 23 and sets it in the drive 19 of the polishing apparatus 1.
5 to start a polishing operation in accordance with the control parameters or control program recorded on the floppy disk.

According to the polishing apparatus of this embodiment, the same advantages as those of the first embodiment can be obtained when the above-described preparation apparatus is used, except that the burden on the operator is slightly increased.

The polishing apparatus according to the present embodiment may be used together with, for example, the following prediction apparatus. FIG.
Is a schematic flowchart showing the operation of the prediction device. This prediction device separates and separates the preparation device 4 of the polishing system according to the first embodiment shown in FIG. 2 from the measurement device 3 and the polishing device 1, and changes the operation of the arithmetic processing unit 20 to perform polishing. FIG. 2 is a block diagram schematically showing a schematic configuration of the predicting apparatus, which is modified so as to have only a function of predicting a polishing amount distribution according to conditions.
This is the same as the creation device 4 in FIG. Therefore, FIG. 2 is also referred to in the description of the prediction device. However, the line from the measuring device 3 to the arithmetic processing unit 20 is also removed.

When the prediction device starts operation, as shown in FIG. 7, the arithmetic processing section 20 controls the display section 22 to display an input guidance display, and gives the operator all polishing conditions (fixed parameters and The user is prompted to input an adjustment parameter (step S41). When these are input via the input unit 21, the arithmetic processing unit 20 controls the display unit 22 to display an input guidance display, and inputs the film thickness distribution of the wafer 2 measured by the measuring device 3 to the operator. (Step S42). When this film thickness distribution is input via the input unit 21, the arithmetic processing unit 20 performs steps S43 to S46 respectively corresponding to steps S12 and S14 to S16 in FIG.

In the case of YES in step S46, the arithmetic processing unit 20 calculates the predicted polishing amount distribution of the surface to be polished of the wafer 2 obtained up to this point and the initial film thickness distribution input in step S42. Is calculated based on the estimated thickness distribution of the polished surface of the wafer 2 (step S47). Thereafter, the arithmetic processing unit 20 causes the display unit 22 to display the predicted polishing amount distribution, the initial film thickness distribution, and the predicted film thickness distribution (step S48).

Next, the arithmetic processing section 20 determines whether there is a command from the operator via the input section 22 to continue the simulation or a command to end the simulation (step S49). If there is a command to continue, the process returns to step S41. On the other hand, if there is a command to end, the operation ends.

According to this prediction device, when the operator inputs the polishing conditions as appropriate, the wafer
It is possible to obtain a prediction result such as the film thickness distribution of the polished surface. Therefore, the operator can create a control parameter or a control program for controlling the polishing apparatus according to the present embodiment using the prediction device. The control parameter or control program created in this way is input from the input unit 17 to the control unit 15 by an operator, for example. Thereafter, the operator gives a command from the input unit 17 to the control unit 15 to start a polishing operation according to the input control parameters or control program.

According to the polishing apparatus of the present embodiment, when the above-described preparation apparatus is used, the same advantages as those of the first embodiment can be obtained except that the burden on the operator increases.

[Fourth Embodiment]

FIG. 8 is a flowchart showing a semiconductor device manufacturing process. After the semiconductor device manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204. Steps S201 to S204 according to the selection
Proceed to one of

Step S201 is an oxidation step for oxidizing the surface of the silicon wafer. Step S202 is CV
CV to form an insulating film on the silicon wafer surface by D etc.
This is the D step. Step S203 is an electrode forming step of forming an electrode film on the silicon wafer by a process such as vapor deposition.
Step S204 is an ion implantation step of implanting ions into the silicon wafer.

After the CVD step or the electrode forming step,
Proceeding to step S209, it is determined whether a CMP process is to be performed. If not, the process proceeds to step S206.
If so, the process proceeds to step S205. Step S205
Is a CMP step. In this step, a polishing apparatus according to the present invention is used to planarize an interlayer insulating film, form a damascene by polishing a metal film on the surface of a semiconductor device, and the like.

After the CMP step or the oxidation step, the process proceeds to Step S206. Step S206 is a photolithography step. In the photolithography process, a resist is applied to a silicon wafer, a circuit pattern is printed on the silicon wafer by exposure using an exposure apparatus, and the exposed silicon wafer is developed. Further, in the next step S207, portions other than the developed resist image are removed by etching.
Thereafter, the resist is stripped, and the etching step is performed to remove the unnecessary resist after the etching.

Next, it is determined in step S208 whether all necessary processes have been completed, and if not, step S20
Returning to 0, the above steps are repeated to form a circuit pattern on the silicon wafer. If it is determined in step S208 that all steps have been completed, the process ends.

In the semiconductor device manufacturing method according to the present invention, since the polishing apparatus according to the present invention is used in the CMP step, the desired shape of the surface to be polished of the wafer or the desired film on the side to be polished in the CMP step is obtained. Thickness distribution can be obtained with high accuracy, and the yield in the CMP process is improved.
The process efficiency of the CMP process can be improved. As a result, there is an effect that a semiconductor device can be manufactured at a lower cost than a conventional semiconductor device manufacturing method.

Note that the polishing apparatus according to the present invention may be used in a CMP step of a semiconductor device manufacturing process other than the above-described semiconductor device manufacturing process.

A semiconductor device according to the present invention is manufactured by the semiconductor device manufacturing method according to the present invention. As a result, the semiconductor device can be manufactured at a lower cost than the conventional semiconductor device manufacturing method, and the manufacturing cost of the semiconductor device can be reduced.

Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments.

For example, the above embodiments are examples applied to CMP, but the present invention can also be applied to polishing of optical members such as glass.

[0149]

As described above, according to the present invention,
A processing method and apparatus capable of accurately obtaining a desired shape of a surface to be processed of a workpiece or a desired film thickness distribution on a surface to be processed can be provided.

Further, according to the present invention, it is possible to provide a processing system capable of improving the efficiency of the processing steps.

Further, according to the present invention, it is possible to obtain a desired shape of a work surface of a work to be processed or a desired film thickness distribution on the work surface side with high accuracy, and to improve the efficiency of the working process. It is possible to provide a processing system capable of performing the following.

Further, according to the present invention, it is possible to improve the process efficiency and improve the yield, and it is possible to manufacture a semiconductor device at a lower cost than a conventional semiconductor device manufacturing method. , And a low-cost semiconductor device.

[Brief description of the drawings]

FIG. 1 is a graph comparing experimental data and calculated values showing a relationship between a contact relative speed and a polishing amount.

FIG. 2 is a schematic configuration diagram schematically showing a polishing system according to the first embodiment of the present invention.

FIG. 3 is a schematic flowchart showing an operation of the polishing system according to the first embodiment of the present invention.

FIG. 4 is a schematic flowchart showing the processing content of step S2 in FIG. 3;

FIG. 5 is a schematic flowchart showing an operation of the polishing system according to the second embodiment of the present invention.

FIG. 6 is a schematic flowchart showing the operation of a preparation apparatus that can be used with the polishing apparatus according to the third embodiment of the present invention.

FIG. 7 is a schematic flowchart showing the operation of a prediction device that can be used with the polishing device according to the third embodiment of the present invention.

FIG. 8 is a flowchart showing a semiconductor device manufacturing process.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Polishing device 2 Wafer 3 Film thickness measuring device 4 Preparation device 5 Transport device 11 Polishing member 12 Wafer holder 13 Polishing platen 14 Polishing body 15 Control unit 16 Drive unit 17,21 Input unit 18,22 Display unit 19,23 Floppy disk drive 20 arithmetic processing unit

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Eiichi Yamamoto 3-2-3 Marunouchi, Chiyoda-ku, Tokyo Nihon Head Office (72) Inventor Kajiro Shio 3-2-2-3 Marunouchi, Chiyoda-ku, Tokyo Nihon Head Office F-term (reference) 3C034 AA08 AA13 CA05 CB02 CB18 DD07 3C058 AA07 BA07 BB06 CA01 CB10 DA12 DA17

Claims (43)

[Claims] 1. A processing apparatus for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece. In a processing method of processing an object, by operating the processing apparatus according to a control method or a control parameter or a control program generated by a preparation method or a preparation apparatus for preparing a control parameter or a control program for controlling the processing apparatus, Processing the workpiece, the production method includes a prediction step of predicting a processing amount distribution of the processing surface obtained after the processing of the workpiece, the processing predicted in the prediction step The control parameter or the control program is created based on the quantity distribution, and the predicting step includes the steps of: The processing amount of the partial region after processing the workpiece, the contact relative speed between the partial region and the tool as one of the parameters, if at least the contact relative speed is a predetermined speed or more, Predicting according to a relationship in which the amount of processing increases continuously or stepwise as the contact relative speed increases and the amount of increase increases continuously or stepwise, or according to a relationship substantially equivalent to this relationship. The production apparatus includes a prediction unit for predicting a processing amount distribution of the processing surface obtained after the processing of the workpiece, the control based on the processing amount distribution predicted in the prediction step A parameter or a control program is created, and the prediction means calculates, for each partial region of the processing surface of the workpiece, the processing amount of the partial region after processing the workpiece. Assuming that the relative contact speed between the partial area and the tool is one of the parameters, at least when the relative contact speed is equal to or higher than a predetermined speed, the machining amount is continuously or stepwisely increased as the relative contact speed increases. A processing method, comprising: means for predicting according to a relationship in which the amount of increase is gradually or gradually reduced gradually or stepwise, or a relationship substantially equivalent to this relationship. 2. A processing apparatus for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece. In a processing method of processing an object, by operating the processing apparatus according to a control method or a control parameter or a control program generated by a preparation method or a preparation apparatus for preparing a control parameter or a control program for controlling the processing apparatus, The method includes the steps of: (a) measuring a shape of a processed surface of the processed object before or after processing or a film thickness distribution on the processed surface side; Based on the desired shape of the surface to be processed of the workpiece or the desired film thickness distribution on the side of the surface to be processed, of the surface to be processed required to obtain the desired shape or the desired film thickness distribution Addition Obtaining a target machining amount distribution that is an amount distribution; (b) an assumption step for assuming the control parameter or the control program; and (c) the processing device according to the control parameter or control program assumed in the estimation step. In a prediction step of predicting a processing amount distribution of the processing surface obtained after the processing of the processing target, for each partial region of the processing surface of the processing target, the processing of the processing target is performed. The subsequent machining amount of the partial area is determined by the relative speed of contact between the partial area and the tool.
First, when at least the contact relative speed is equal to or higher than a predetermined speed, as the contact relative speed increases, the amount of processing increases continuously or stepwise while the amount of increase gradually or continuously increases. A prediction step including a step of predicting according to a relation that becomes smaller or a relation substantially equivalent to this relation, and (d) comparing the processing amount distribution predicted in the prediction step with the target processing amount distribution, A determining step of determining whether the control parameter or the control program assumed in the assuming step is good or bad; (e) the shape of the processing surface of the workpiece before or after processing or Based on the measurement result of the film thickness distribution on the processing surface side and the desired shape of the processing surface of the workpiece or the desired film thickness distribution on the processing surface side, the desired shape or the desired Obtain film thickness distribution Means for obtaining a target machining amount distribution, which is a machining amount distribution of the surface to be machined necessary for this; (f) assuming means for assuming the control parameter or control program; and (g) control assuming by the assuming means. A prediction means for predicting a distribution of a processing amount of the processing surface obtained after the processing of the workpiece by the processing apparatus according to a parameter or a control program, wherein the individual portions of the processing surface of the processing target are For the region, when the processing amount of the partial region after processing the workpiece and the contact relative speed between the partial region and the tool as one of the parameters, at least the contact relative speed is equal to or higher than a predetermined speed. In the relationship, as the contact relative speed increases, the amount of processing increases continuously or stepwise while the amount of increase gradually decreases continuously or stepwise;
Or (h) comparing the machining amount distribution predicted by the predicting means with the target machining amount distribution in accordance with a relation substantially equivalent to this relation, and A determining means for determining whether the assumed control parameter or control program is good or bad. 3. The method according to claim 1, wherein, if the determination is negative in the determination step, at least a part of a control parameter or a control program assumed in the assumption step is changed from an already assumed control parameter or control program. And the above assumed stage,
The prediction step and the determination step are repeated in this order. If the determination unit determines that the determination unit is not, the creation device sets the control parameter or control program assumed by the estimation unit to the one already assumed. 3. The processing method according to claim 2, further comprising: means for changing at least a part of the processing, and causing the assuming means, the predicting means, and the determining means to repeat the operation in this order. 4. 4. The predicting step or the predicting means, when the contact relative speed is equal to or less than the predetermined speed, calculates a processing amount of the partial area in accordance with a linear relationship between the processing amount and the contact relative speed. The processing method according to any one of claims 1 to 3, wherein 5. The processing method according to claim 1, wherein the predetermined speed is 0.04 km / min. 6. The method according to claim 1, wherein the predicting step or the predicting unit predicts a machining amount of the partial region by performing an operation in accordance with an expression indicating the relationship.
The processing method according to any one of the above. 7. The processing method according to claim 6, wherein the expression includes at least one of a logarithmic function expression, an exponential function expression, and an n-th order polynomial (2 ≦ n). 8. The method according to claim 1, wherein the prediction step or the prediction unit predicts a processing amount of the partial region by referring to a lookup table indicating the relationship. The processing method described. 9. The method according to claim 1, wherein the processing of the workpiece is chemical mechanical polishing performed while an abrasive is interposed between the tool and the workpiece. The processing method described in Crab. 10. The predicting step or the predicting means may include, as the relation, a material forming a work surface of the work, a type of the abrasive, and a material and a structure forming a work surface of the tool. 10. The processing method according to claim 9, wherein a relationship determined according to at least one of the following is used. 11. A processing apparatus for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece, wherein the processing apparatus controls the processing apparatus. In accordance with a control parameter or a control program created by a creation method or a creation device for creating a control parameter or a control program for performing, the processing method includes means for processing the workpiece, wherein the creation method includes processing the workpiece. A prediction step of predicting a distribution of the machining amount of the surface to be processed obtained after the step (c), wherein the control parameter or the control program is created based on the distribution of the machining amount predicted in the prediction step. For each partial area of the workpiece surface of the workpiece, the machining amount of the partial area after processing the workpiece is determined by the amount of contact between the partial area and the tool. Assuming that the contact relative speed is one of the parameters, and at least the contact relative speed is equal to or higher than a predetermined speed, as the contact relative speed increases, the processing amount increases continuously or stepwise while the increase amount increases. A step of predicting according to a relationship that becomes smaller continuously or stepwise, or a relationship substantially equivalent to this relationship, wherein the creating device processes the workpiece surface obtained after the workpiece is processed. Predicting means for predicting the amount distribution, creating the control parameter or control program based on the processing amount distribution predicted in the predicting step, the predicting means, an individual part of the processing surface of the workpiece For the region, the processing amount of the partial region after processing the workpiece is at least the contact relative speed between the partial region and the tool as one of the parameters. When the contact relative speed is equal to or higher than a predetermined speed, a relationship in which the amount of processing increases continuously or stepwise as the contact relative speed increases, or the amount of increase gradually decreases continuously or stepwise, or A processing apparatus comprising means for predicting according to a relation substantially equivalent to this relation. 12. A processing apparatus for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece, wherein the processing apparatus controls the processing apparatus. Means for processing the workpiece in accordance with a control parameter or a control program generated by a generating method or a generating apparatus for generating a control parameter or a control program for performing the processing. The measurement result of the shape of the processing surface of the workpiece or the film thickness distribution on the processing surface side, and the desired shape of the processing surface of the processing object or the desired film thickness on the processing surface side Obtaining a target processing amount distribution, which is a processing amount distribution of the processing surface required to obtain the desired shape or the desired film thickness distribution, based on the distribution; and (b) the control parameter or control. And (c) predicting a processing amount distribution of the processing surface obtained after the processing of the workpiece by the processing apparatus according to the control parameters or the control program assumed in the prediction step. Prediction step, for each partial area of the surface to be processed of the workpiece, the machining amount of the partial area after processing the workpiece, the contact relative speed between the partial area and the tool Is the parameter 1
First, when at least the contact relative speed is equal to or higher than a predetermined speed, as the contact relative speed increases, the amount of processing increases continuously or stepwise while the amount of increase gradually or continuously increases. A prediction step including a step of predicting according to a relation that becomes smaller or a relation substantially equivalent to this relation, and (d) comparing the processing amount distribution predicted in the prediction step with the target processing amount distribution, A determining step of determining whether the control parameter or the control program assumed in the assuming step is good or bad; (e) the shape of the processing surface of the workpiece before or after processing or Based on the measurement result of the film thickness distribution on the processing surface side and the desired shape of the processing surface of the workpiece or the desired film thickness distribution on the processing surface side, the desired shape or the desired Obtain film thickness distribution Means for obtaining a target machining amount distribution, which is a machining amount distribution of the surface to be machined necessary for this; (f) assuming means for assuming the control parameter or control program; and (g) control assuming by the assuming means. A prediction means for predicting a distribution of a processing amount of the processing surface obtained after the processing of the workpiece by the processing apparatus according to a parameter or a control program, wherein the individual portions of the processing surface of the processing target are For the region, when the processing amount of the partial region after processing the workpiece and the contact relative speed between the partial region and the tool as one of the parameters, at least the contact relative speed is equal to or higher than a predetermined speed. In the relationship, as the contact relative speed increases, the amount of processing increases continuously or stepwise while the amount of increase gradually decreases continuously or stepwise;
Or (h) comparing the machining amount distribution predicted by the predicting means with the target machining amount distribution in accordance with a relation substantially equivalent to this relation, and A determination unit for determining whether the assumed control parameter or control program is good or bad. 13. The method according to claim 1, wherein, when the determination is negative in the determination step, at least a part of a control parameter or a control program assumed in the estimation step is changed from that already assumed. The assuming step, the predicting step, and the determining step are repeated in this order. When the determination unit determines that the determination unit has determined no, the control parameter or the control program assumed by the assuming unit. Means for changing at least a part of the assumption, and means for causing the assumption means, the prediction means, and the determination means to repeat operations in this order, 13. The processing apparatus according to item 12. 14. The predicting step or the predicting means, when the contact relative speed is equal to or less than the predetermined speed, according to a linear relationship between the processing amount and the contact relative speed,
14. The processing apparatus according to claim 11, wherein a processing amount of the partial area is predicted. 15. The predetermined speed is 0.04 km / min.
The processing apparatus according to claim 11, wherein: 16. The method according to claim 11, wherein the prediction step or the prediction unit predicts a machining amount of the partial region by performing an operation according to an expression indicating the relationship. Processing equipment. 17. The processing apparatus according to claim 16, wherein said formula includes at least one of a logarithmic function formula, an exponential function formula, and an n-th order polynomial (2 ≦ n). 18. The method according to claim 11, wherein the prediction step or the prediction unit predicts a processing amount of the partial area by referring to a lookup table indicating the relationship. The processing device as described. 19. The method according to claim 11, wherein the processing of the workpiece is chemical mechanical polishing performed while an abrasive is interposed between the tool and the workpiece. The processing device according to any one of the above. 20. The predicting step or the predicting means may include, as the relation, a material forming a work surface of the work, a type of the abrasive, and a material and a structure forming a work surface of the tool. 20. The processing apparatus according to claim 19, wherein a relationship determined according to at least one of the above is used. 21. The processing apparatus according to claim 19, wherein the processing is performed under a condition that a part of the workpiece is not in contact with the tool for at least a predetermined time during the processing. 22. The processing apparatus according to claim 19, wherein a diameter of said tool is smaller than said workpiece. 23. The processing apparatus according to claim 19, wherein the diameter of the tool is substantially the same as or larger than the workpiece. 24. Machining under high-speed machining conditions in which a linear relationship approximation is not established between the relative contact speed between the workpiece and the tool and the machining amount of the workpiece and a non-linear relationship is established. 24. The processing apparatus according to claim 19, wherein the processing is performed. 25. The method according to claim 19, wherein the processing is performed under processing conditions in which a maximum value of a relative contact speed between the workpiece and the tool is 0.1 km / min or more.
5. The processing apparatus according to any one of 4. 26. A processing device for processing the workpiece by relatively moving the tool and the workpiece while applying a load between the tool and the workpiece, and before or after the processing. A measuring device for measuring the shape of the processed surface of the workpiece or the film thickness distribution on the processed surface side; and a control parameter or control for controlling the processing device based on a measurement result by the measuring device. A processing device for generating a program, wherein the processing device processes the workpiece in accordance with a control parameter or a control program generated by the generating device. 27. An input of the measurement result from the measuring device to the creating device and an input of a control parameter or a control program created by the creating device to the processing device automatically or in response to a command. The processing system according to claim 26, wherein the processing is performed. 28. The preparation apparatus according to claim 28, wherein: (a) a measurement result of the shape of a surface to be processed of the workpiece before or after the processing or a film thickness distribution on the side of the processed surface by the measuring device; Based on a desired shape of the processing surface of the workpiece input by the unit or a desired film thickness distribution on the processing surface side,
Means for obtaining a target machining amount distribution which is a machining amount distribution of the surface to be machined necessary to obtain the desired shape or the desired film thickness distribution; and (b) assuming means for assuming the control parameter or control program. (C) prediction means for predicting a processing amount distribution of the processing surface obtained after the processing of the workpiece by the processing apparatus according to the control parameter or control program assumed by the assumption means. For each of the partial areas of the processing surface of the workpiece, the processing amount of the partial area after processing the workpiece, the contact relative speed between the partial area and the tool as one of the parameters. When at least the contact relative speed is equal to or higher than a predetermined speed, the processing amount increases continuously or stepwise as the contact relative speed increases, and the increase amount is continuously increased. A predicting means including a predicting means in accordance with a relation gradually or stepwise gradually reduced, or a relation substantially equivalent to this relation; (d) a processing amount distribution predicted by the predicting means and the target processing amount distribution; 28. The processing system according to claim 26, further comprising: a determination unit configured to determine whether the control parameter or the control program supposed in the supposition step is good or not by comparing the control parameters. 29. The creation device, if determined to be no by the determination unit, changes at least a part of a control parameter or a control program assumed by the assumption unit with respect to an already assumed control parameter or control program. 29. The processing system according to claim 28, further comprising: means for causing said assuming means, said predicting means, and said determining means to repeat operations in this order. 30. When the contact relative speed is equal to or less than the predetermined speed, the prediction unit predicts a processing amount of the partial area according to a linear relationship between the processing amount and the contact relative speed. The processing system according to claim 28 or 29, wherein: 31. The predetermined speed is 0.04 km / min.
31. The processing system according to claim 28, wherein: 32. The processing system according to claim 28, wherein said prediction means predicts a processing amount of said partial area by performing an operation according to an expression indicating said relationship. 33. The processing system according to claim 32, wherein the expression includes at least one of a logarithmic function expression, an exponential function expression, and an n-th order polynomial (2 ≦ n). 34. The apparatus according to claim 28, wherein the prediction unit predicts a processing amount of the partial area by referring to a lookup table indicating the relationship.
2. The processing system according to claim 1. 35. The method according to claim 26, wherein the processing of the workpiece is chemical mechanical polishing performed while interposing an abrasive between the tool and the workpiece. The processing system described in Crab. 36. The predicting means, as the relationship, of a material constituting a surface to be machined of the workpiece, a type of the abrasive, and a material and a structure constituting a surface to be machined of the tool. 36. The processing system according to claim 35, wherein a relationship determined according to at least one is used. 37. The processing apparatus according to claim 35, wherein the processing apparatus performs the processing under a condition that a part of the workpiece is not in contact with the tool for at least a certain time during the processing. Processing system. 38. The processing system according to claim 35, wherein the diameter of the tool is smaller than that of the workpiece. 39. The processing system according to claim 35, wherein the diameter of the tool is substantially equal to or larger than the workpiece. 40. The processing device according to claim 26, wherein a linear relation approximation is not established between the relative contact speed between the workpiece and the tool and the processing amount of the workpiece, and the processing apparatus has a non-linear relationship. 40. The processing system according to claim 35, wherein the processing is performed under various processing conditions. 41. The processing apparatus according to claim 35, wherein the processing apparatus performs the processing under a processing condition in which a maximum value of a relative contact speed between the workpiece and the tool is 0.1 km / min or more. The processing system according to any one of the above. 42. A step of flattening a surface of a semiconductor wafer using the processing apparatus according to claim 11 or the processing system according to claim 26. Semiconductor device manufacturing method. 43. A semiconductor device manufactured by the semiconductor device manufacturing method according to claim 42.