JP2002334995A5 - - Google Patents

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Publication number
JP2002334995A5
JP2002334995A5 JP2002052794A JP2002052794A JP2002334995A5 JP 2002334995 A5 JP2002334995 A5 JP 2002334995A5 JP 2002052794 A JP2002052794 A JP 2002052794A JP 2002052794 A JP2002052794 A JP 2002052794A JP 2002334995 A5 JP2002334995 A5 JP 2002334995A5
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JP
Japan
Prior art keywords
electrode
semiconductor film
film
semiconductor
forming
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JP2002052794A
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English (en)
Japanese (ja)
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JP2002334995A (ja
JP4056765B2 (ja
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Priority to JP2002052794A priority Critical patent/JP4056765B2/ja
Priority claimed from JP2002052794A external-priority patent/JP4056765B2/ja
Publication of JP2002334995A publication Critical patent/JP2002334995A/ja
Publication of JP2002334995A5 publication Critical patent/JP2002334995A5/ja
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Publication of JP4056765B2 publication Critical patent/JP4056765B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002052794A 2001-02-28 2002-02-28 半導体装置の作製方法 Expired - Fee Related JP4056765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002052794A JP4056765B2 (ja) 2001-02-28 2002-02-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-56049 2001-02-28
JP2001056049 2001-02-28
JP2002052794A JP4056765B2 (ja) 2001-02-28 2002-02-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002334995A JP2002334995A (ja) 2002-11-22
JP2002334995A5 true JP2002334995A5 (enrdf_load_stackoverflow) 2005-08-25
JP4056765B2 JP4056765B2 (ja) 2008-03-05

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ID=26610391

Family Applications (1)

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JP2002052794A Expired - Fee Related JP4056765B2 (ja) 2001-02-28 2002-02-28 半導体装置の作製方法

Country Status (1)

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JP (1) JP4056765B2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4175877B2 (ja) * 2002-11-29 2008-11-05 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
JP4599603B2 (ja) * 2003-02-12 2010-12-15 シャープ株式会社 トランジスタの製造方法
JP4583797B2 (ja) * 2004-04-14 2010-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4759314B2 (ja) 2005-05-20 2011-08-31 ルネサスエレクトロニクス株式会社 固体撮像装置の製造方法および固体撮像装置

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