JP2002329741A - Bonding copper wire - Google Patents
Bonding copper wireInfo
- Publication number
- JP2002329741A JP2002329741A JP2001136058A JP2001136058A JP2002329741A JP 2002329741 A JP2002329741 A JP 2002329741A JP 2001136058 A JP2001136058 A JP 2001136058A JP 2001136058 A JP2001136058 A JP 2001136058A JP 2002329741 A JP2002329741 A JP 2002329741A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- copper
- antioxidant
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45669—Platinum (Pt) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48839—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、集積回路素子(I
C、LSI、トランジスタ等)上の電極と、回路配線基板
(リードフレーム、セラミックス基板、プリント基板
等)の導体配線とを接続する銅ボンディングワイヤーに
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit device (I
The present invention relates to a copper bonding wire for connecting an electrode on a C, LSI, transistor, or the like) to a conductor wiring of a circuit wiring board (a lead frame, a ceramic substrate, a printed board, etc.).
【0002】[0002]
【従来の技術】集積回路素子と回路配線基盤との接続法
としては、半田接続法、抵抗溶接法等も行われている
が、ボールボンディング法、ウェッヂボンディング法が
一般的である。ボールボンディング法には高速ボンディ
ングが可能という長所があり、ウェッヂボンディング法
には低ループ化が可能、ファインピッチボンディングに
好適等の長所が有る。2. Description of the Related Art As a method of connecting an integrated circuit element to a circuit wiring board, a solder connection method, a resistance welding method, and the like are also performed, but a ball bonding method and a wet bonding method are generally used. The ball bonding method has the advantage that high-speed bonding is possible, and the wet bonding method has the advantages that a low loop can be achieved and that it is suitable for fine pitch bonding.
【0003】一般的なボールボンディング法のプロセス
とは以下のとおりである。移動自在なキャピラリー(以
下「ボンディングツール」という)にガイドされたワイ
ヤの先端に、放電・溶融加工によりボールを形成した
後、第1ボンディング点である集積回路素子上の電極
に、超音波を印加しつつ前記ボールを押圧して接合を形
成する(ボールボンディング)。その後ワイヤを引き出
しながら、ボンディングツールを第2ボンディング点で
ある回路配線基板の電極に移動して、同様に接続する
(ウェッヂボンディング。このときボールの形成は無
い)。接続後、キャピラリーを上昇させワイヤーをクラ
ンプで引っぱることによりワイヤを切断する。以上のプ
ロセスを通じて、接合促進のため集積回路素子、回路配
線基板共に150度〜300度程度に加熱されている。The general ball bonding process is as follows. After a ball is formed at the tip of a wire guided by a movable capillary (hereinafter referred to as a “bonding tool”) by electric discharge / melting processing, ultrasonic waves are applied to an electrode on an integrated circuit element which is a first bonding point. While pressing, the ball is pressed to form a bond (ball bonding). Thereafter, while pulling out the wire, the bonding tool is moved to the electrode of the circuit wiring board, which is the second bonding point, and connected in the same manner (wet bonding; no ball is formed at this time). After connection, the capillary is raised and the wire is cut by pulling the wire with a clamp. Through the above process, both the integrated circuit element and the circuit wiring board are heated to about 150 to 300 degrees to promote the bonding.
【0004】ボールボンディング法で、ボンディングワ
イヤーの素材としては、金が一般に使われてきたが、近
年銅ボンディングワイヤーが脚光を浴びつつある。その
主な理由としては次の3点が挙げられる。第1には、集
積回路素子の高集積化、高周波化に対応して集積回路素
子の配線がアルミから銅へと変わりつつあることの影響
である。集積回路素子の配線がアルミから銅へと変われ
ば、ボンディングの素材もアルミから銅へと変更した方
が、同一金属であり、好接合性が実現出来やすい。第2
には、半導体パッケージの「高集積化に伴う多ワイヤー
配線化」の影響が挙げられる。これにより隣接ワイヤー
間隔は狭く、ワイヤー配線長は長くなる傾向にある。そ
の結果、樹脂封止時にワイヤーが倒れ、隣接ワイヤーと
接触短絡する危険性が増す。そこで金ワイヤーより弾性
が大きく、倒れにくい銅ワイヤーが着目されている。第
3には、「価格」である。安価な銅ワイヤーを使用する
ことにより安価に半導体パッケージを製造することが出
来る。In the ball bonding method, gold has been generally used as a material of a bonding wire, but recently, a copper bonding wire has been spotlighted. The main reasons are as follows. First, there is an influence of the fact that the wiring of the integrated circuit element is changing from aluminum to copper in response to the higher integration and higher frequency of the integrated circuit element. If the wiring of the integrated circuit element changes from aluminum to copper, it is easier to achieve good bonding if the bonding material is changed from aluminum to copper because the same metal is used. Second
For example, there is an influence of the "multi-wire wiring accompanying high integration" of a semiconductor package. As a result, the distance between adjacent wires tends to be narrow, and the wire length tends to be long. As a result, the risk of the wire falling down during resin sealing and short-circuiting with an adjacent wire is increased. Therefore, attention has been paid to copper wires that are larger in elasticity than gold wires and are hard to fall down. Third is “price”. By using an inexpensive copper wire, a semiconductor package can be manufactured at low cost.
【0005】[0005]
【発明が解決しようとする課題】前述のような長所を有
する銅ボンディングワイヤーではあるが、実際には、次
の2つの課題があった。一つは、保管中に表面酸化する
こと。もう一つは、ボンディング時の熱により表面酸化
することである。これらは、いずれもボンディングワイ
ヤーの接合性の低下の原因になるものである。なお、ボ
ンディング時の熱としては、ワイヤー先端を溶融してボ
ールを形成するための熱、接合部からの熱伝導、集積回
路素子・回路配線基板からの熱放射が挙げられる。Although the copper bonding wire has the above-mentioned advantages, there are actually the following two problems. First, surface oxidation during storage. Another is that the surface is oxidized by heat at the time of bonding. Any of these causes a decrease in the bonding property of the bonding wire. Examples of the heat at the time of bonding include heat for melting a wire tip to form a ball, heat conduction from a bonding portion, and heat radiation from an integrated circuit element / circuit wiring board.
【0006】[0006]
【課題を解決するための手段】本発明は前記の2つの課
題を解決し、接合性の良好な銅ボンディングワイヤーを
提供することを目的とするもので、表面に酸化防止剤を
薄膜コーティングしたことを特徴とする銅ボンディング
ワイヤーであり、好ましくは、酸化防止剤として、イミ
ダゾール系の酸化防止剤を使用して、これを薄膜コーテ
ィングしたことを特徴とする銅ボンディングワイヤーで
ある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above two problems and to provide a copper bonding wire having a good bonding property. Preferably, a copper bonding wire characterized by using an imidazole-based antioxidant as an antioxidant and coating it with a thin film.
【0007】[0007]
【発明の実施の形態】本発明で、ボンディングワイヤー
の表面にコーティングする酸化防止剤としては、イミダ
ゾール系、トリアゾール系、ロジン系などが挙げられ
る。中でも、イミダゾール系、及び一部のロジン系は、
ボンディング時の熱に抗して充分に耐酸化性を示すので
好ましい。この点では、ベンゼン環を有するイミダゾー
ル系の酸化防止剤が特に好ましい。ところで、ロジン系
は、コーテイング時に、有機酸などの有機溶剤が必要な
ため、揮発残留溶剤が半導体プロセスに悪影響を及ぼす
おそれがあるが、イミダゾール系は、水に溶解してコー
ティングすることが可能であり、前記の悪影響の心配が
なく、この観点からも好ましい。BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, examples of an antioxidant for coating the surface of a bonding wire include imidazole, triazole, and rosin. Among them, imidazole-based and some rosin-based
It is preferable because it shows sufficient oxidation resistance against heat at the time of bonding. In this regard, an imidazole-based antioxidant having a benzene ring is particularly preferred. By the way, rosin-based solvents require an organic solvent such as an organic acid during coating, so volatile residual solvents may have an adverse effect on semiconductor processes.Imidazole-based solvents can be dissolved and coated in water. Yes, there is no concern about the above-mentioned adverse effects, and it is preferable from this viewpoint.
【0008】コーティング層の膜厚は、0.05μm〜0.1
μmが好適である。0.1μmより厚膜の場合、被覆材
が接合を阻害し、接合性の悪化が生じるおそれがある。
逆に、0.05μmより薄膜だと、酸化防止性が不十分とな
る。The thickness of the coating layer is 0.05 μm to 0.1 μm.
μm is preferred. When the film thickness is larger than 0.1 μm, the coating material may hinder the bonding, and the bonding property may be deteriorated.
Conversely, if the thickness is less than 0.05 μm, the antioxidant properties will be insufficient.
【0009】アルカリ及びハロゲン元素などの不純物
は、銅の腐食の原因となる。従って、酸化防止剤のコー
ティング層中には、アルカリ及びハロゲン元素などの不
純物が含くまれていないか、含くまれていても、いずれ
も、1ppm以下の含有量であることが望ましい。[0009] Impurities such as alkali and halogen elements cause corrosion of copper. Therefore, it is desirable that the coating layer of the antioxidant does not contain impurities such as alkalis and halogen elements, or even if it does contain any impurities, the content is 1 ppm or less.
【0010】例えば、特開昭61-194735号公報、特開平2
-155121号公報、特開平3-165044号公報、特開平4-35039
号公報には、銅ワイヤー表面に樹脂等で絶縁被覆コーテ
ィングをしたワイヤーが開示されている。これらの絶縁
被覆ボンディングワイヤーも、銅表面の酸化を防ぐ機能
を有する可能性がある。しかし、これらの被覆の目的
は、樹脂封止時等に隣接ワイヤーが接触しても導通が生
じないように厚膜絶縁被覆を施すことであり、前記のよ
うな薄膜被覆のものではない。従って、絶縁被覆を剥離
せずにボンディングしようとすると、通常、接合性が悪
くなる傾向がある。For example, JP-A-61-194735 and JP-A-Hei 2
-155121, JP-A-3-65044, JP-A-4-35039
Japanese Patent Application Publication No. JP-A-2005-115125 discloses a wire in which a copper wire surface is coated with an insulating coating with a resin or the like. These insulating-coated bonding wires may also have a function of preventing oxidation of the copper surface. However, the purpose of these coatings is to apply a thick-film insulating coating so that conduction does not occur even when adjacent wires come in contact with each other at the time of resin sealing or the like, and is not a thin-film coating as described above. Therefore, if it is attempted to bond without peeling off the insulating coating, there is usually a tendency that the bondability deteriorates.
【0011】本発明の銅ボンディングワイヤーにあって
も、薄膜とはいえ酸化防止剤のコーテイング層があるの
で、このコーテイング層による接合性の阻害が皆無とは
言い切れない。従って、ボンディング方法として、例え
ば、超音波前発振法のような、絶縁被覆ボンディングワ
イヤーに適したボンディング方法を採用することが好ま
しい。The copper bonding wire of the present invention has a coating layer of an antioxidant even though it is a thin film. Therefore, it cannot be said that there is no hindrance of the bonding property by the coating layer. Therefore, it is preferable to adopt a bonding method suitable for an insulating-coated bonding wire, such as an ultrasonic pre-oscillation method, for example.
【0012】[0012]
【実施例】(実施例1)イミダゾール系酸化防止剤の水
溶液を含ませた2枚のフェルトを押し付けた間を、直径
25μm銅ボンディングワイヤーを通過させ、銅ボンディ
ングワイヤーの表面に、イミダゾール系酸化防止剤の薄
膜コーティング層を形成させた。(Example 1) The diameter between two felts containing an aqueous solution of an imidazole-based antioxidant was pressed.
After passing through a 25 μm copper bonding wire, a thin film coating layer of an imidazole antioxidant was formed on the surface of the copper bonding wire.
【0013】(実施例2)トリアゾール系酸化防止剤を
酢酸水溶液に溶かしたものを含ませた2枚のフェルトを
押し付けた間を、直径25μm銅ボンディングワイヤーを
通過させ、銅ボンディングワイヤーの表面に、トリアゾ
ール系酸化防止剤の薄膜コーティング層を形成させた。(Example 2) While pressing two felts containing a solution of a triazole-based antioxidant in an acetic acid aqueous solution, a copper bonding wire having a diameter of 25 μm was passed through and pressed onto the surface of the copper bonding wire. A triazole antioxidant thin film coating layer was formed.
【0014】実施例1、実施例2の銅ボンディングワイ
ヤー、および、比較例として、酸化防止剤のコーティン
グ層を設けていない裸の銅ボンディングワイヤーについ
て、接合性、長期保管性、加熱酸化性(変色)の評価を
した。For the copper bonding wires of Examples 1 and 2, and as a comparative example, a bare copper bonding wire provided with no antioxidant coating layer, the bonding property, long-term storage property, heat oxidation property (discoloration) ) Was evaluated.
【0015】(接合性の評価)次の接合条件で、それぞ
れの銅ボンディングワイヤーを接合し、下記の測定方法
で測定した接合強度の大きさで接合性の評価とした。 <接合条件> 基板温度250℃ パッドピッチ100μm(先端径130μmのボンディングツ
ール使用) 第一ボンド点材質:アルミ 第二ボンド点材質:銀メッ
キ ワイヤーは、製造後すぐの物を使用した。 <接合強度の測定方法>第一ボンド、第二ボンドの中央
をフックで引っかけて、上方に0.5mm/sで引っ張った際
の破断強度を接合強度とした。(Evaluation of bondability) Under the following bonding conditions, the respective copper bonding wires were bonded, and the bondability was evaluated based on the magnitude of the bonding strength measured by the following measuring method. <Joining conditions> Substrate temperature 250 ° C Pad pitch 100 µm (using a bonding tool with a tip diameter of 130 µm) First bond point material: Aluminum Second bond point material: Silver plating The wire used immediately after production was used. <Measurement method of bonding strength> The breaking strength when the center of the first bond and the second bond was hooked with a hook and pulled upward at 0.5 mm / s was defined as the bonding strength.
【0016】( 長期保管性、加熱酸化性の評価 )長期
保管性、加熱酸化性(変色)は、次の基準で評価した。 <長期保管性>ボンディングワイヤーを1ヶ月室温放置
し、その後、前記の条件で接合した場合に、接合強度に
0.1g以上0.5g未満の強度低下が確認出来た場合は△、
0.5g以上の強度低下が見られる場合×とした。 <加熱酸化性(変色)>加熱された際の酸化程度を変色
程度にて確認した。25μmのワイヤーでは判別しにくい
ため銅箔上に酸化防止剤をコートし、これを200℃で15
秒放置した際に変色が見られない場合は○、少し変色す
る場合は△、著しく変色する場合は×とした。(Evaluation of long-term storage property and heat oxidation property) Long-term storage property and heat oxidation property (discoloration) were evaluated according to the following criteria. <Long-term storage> When the bonding wire is left at room temperature for one month and then bonded under the above conditions,
If a decrease in strength of 0.1 g or more and less than 0.5 g can be confirmed,
When a decrease in strength of 0.5 g or more was observed, it was evaluated as x. <Heat oxidation property (discoloration)> The degree of oxidation when heated was confirmed by the degree of discoloration. An antioxidant is coated on the copper foil because it is difficult to distinguish with a 25 μm wire.
When no discoloration was observed after standing for a second, it was evaluated as ○, slightly discolored as Δ, and markedly discolored as X.
【0017】[0017]
【表1】 [Table 1]
【0018】接合性、長期保管性、加熱酸化性(変色)
の評価結果は、表1に示した通りで、比較例の、裸の銅
ボンディングワイヤーは接合強度が低く、また、長期保
管性、加熱酸化性(変色)もよくないという問題があっ
た。しかし、酸化防止剤のコーティング膜を形成した実
施例1、実施例2は、いずれの項目も問題ないという評
価結果で、とくに、イミダゾールのコーティング膜を形
成した銅ボンディングワイヤーは、良好な評価結果であ
った。Bondability, long-term storage, heat oxidation (discoloration)
Are as shown in Table 1. As a result, the bare copper bonding wire of the comparative example had a problem that the bonding strength was low, and the long-term storage property and the heat oxidation property (discoloration) were not good. However, Examples 1 and 2 in which an antioxidant coating film was formed were evaluated as having no problem in any of the items. In particular, the copper bonding wire in which an imidazole coating film was formed had good evaluation results. there were.
【0019】[0019]
【発明の効果】以上に述べた通り、表面に酸化防止剤を
薄膜コーティングした銅ボンディングワイヤーにより、
長期保管性に優れ、、加熱酸化(変色)を受け難く、接
合性の良好な銅ボンディングワイヤーが得られた。As described above, the copper bonding wire whose surface is coated with an antioxidant in a thin film,
A copper bonding wire having excellent long-term storage properties, being less susceptible to thermal oxidation (discoloration), and having good bonding properties was obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 杉本 裕示 名古屋市南区菊住一丁目7番10号 住電マ グネットワイヤー株式会社内 (72)発明者 野中 毅 大阪市此花区島屋一丁目1番3号 住友電 気工業株式会社大阪製作所内 Fターム(参考) 5F044 FF06 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yuji Sugimoto 1-7-10 Kikuzumi, Minami-ku, Nagoya City Within Sumiden Magnet Wire Co., Ltd. (72) Inventor Takeshi Nonaka 1-3-1 Shimaya, Konohana-ku, Osaka-shi No. Sumitomo Electric Industries, Ltd. Osaka Works F-term (reference) 5F044 FF06
Claims (4)
けたことを特徴とする銅ボンディングワイヤー。1. A copper bonding wire having a surface provided with a coating layer of an antioxidant.
であることを特徴とする請求項1に記載の銅ボンディン
グワイヤー。2. The copper bonding wire according to claim 1, wherein the antioxidant is an imidazole antioxidant.
1μm以下であることを特徴とする請求項1または請求
項2に記載の銅ボンディングワイヤー。3. The coating layer has a thickness of 0.05 μm or more and 0.1 μm or more.
The copper bonding wire according to claim 1 or 2, wherein the thickness is 1 µm or less.
びハロゲン元素の量がいずれも1ppm以下であることを特
徴とする請求項1または請求項2に記載の銅ボンディン
グワイヤー。4. The copper bonding wire according to claim 1, wherein the coating layer contains both alkali and halogen elements in an amount of 1 ppm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001136058A JP2002329741A (en) | 2001-05-07 | 2001-05-07 | Bonding copper wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001136058A JP2002329741A (en) | 2001-05-07 | 2001-05-07 | Bonding copper wire |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002329741A true JP2002329741A (en) | 2002-11-15 |
Family
ID=18983422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001136058A Pending JP2002329741A (en) | 2001-05-07 | 2001-05-07 | Bonding copper wire |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002329741A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153625A (en) * | 2006-11-21 | 2008-07-03 | Sumitomo Metal Mining Co Ltd | Copper bonding wire |
GB2462822A (en) * | 2008-08-18 | 2010-02-24 | Crombie 123 Ltd | Wire bonding |
US8492898B2 (en) | 2007-02-19 | 2013-07-23 | Semblant Global Limited | Printed circuit boards |
US8618420B2 (en) | 2008-08-18 | 2013-12-31 | Semblant Global Limited | Apparatus with a wire bond and method of forming the same |
US8995146B2 (en) | 2010-02-23 | 2015-03-31 | Semblant Limited | Electrical assembly and method |
US9055700B2 (en) | 2008-08-18 | 2015-06-09 | Semblant Limited | Apparatus with a multi-layer coating and method of forming the same |
US11786930B2 (en) | 2016-12-13 | 2023-10-17 | Hzo, Inc. | Protective coating |
-
2001
- 2001-05-07 JP JP2001136058A patent/JP2002329741A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153625A (en) * | 2006-11-21 | 2008-07-03 | Sumitomo Metal Mining Co Ltd | Copper bonding wire |
US8492898B2 (en) | 2007-02-19 | 2013-07-23 | Semblant Global Limited | Printed circuit boards |
US9648720B2 (en) | 2007-02-19 | 2017-05-09 | Semblant Global Limited | Method for manufacturing printed circuit boards |
GB2462822A (en) * | 2008-08-18 | 2010-02-24 | Crombie 123 Ltd | Wire bonding |
GB2462822B (en) * | 2008-08-18 | 2011-11-02 | Crombie 123 Ltd | Wire bonding |
US8618420B2 (en) | 2008-08-18 | 2013-12-31 | Semblant Global Limited | Apparatus with a wire bond and method of forming the same |
US9055700B2 (en) | 2008-08-18 | 2015-06-09 | Semblant Limited | Apparatus with a multi-layer coating and method of forming the same |
US8995146B2 (en) | 2010-02-23 | 2015-03-31 | Semblant Limited | Electrical assembly and method |
US11786930B2 (en) | 2016-12-13 | 2023-10-17 | Hzo, Inc. | Protective coating |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6519845B1 (en) | Wire bonding to dual metal covered pad surfaces | |
WO2014137288A1 (en) | Palladium coated copper wire for bonding applications | |
JP2002329741A (en) | Bonding copper wire | |
JPS59155161A (en) | Wire for bonding of semiconductor element | |
JPS60124960A (en) | Wire for connecting semiconductor element | |
JPH1022434A (en) | Lead frame for integrated circuit and manufacture thereof | |
JPS6243343B2 (en) | ||
JP2016537819A (en) | Coated wire for bonding applications | |
Du et al. | The mechanism of Pd distribution in the process of FAB formation during Pd-coated Cu wire bonding | |
JP3191684B2 (en) | Method for manufacturing semiconductor element having electroplating lead | |
JPH05129357A (en) | Bonding wire | |
JP2501126B2 (en) | Bonding method of gold wire to aluminum lead terminal | |
WO2014137287A1 (en) | Palladium coated copper wire for bonding applications | |
JP2001043745A (en) | Flat cable | |
JPS5826662B2 (en) | Gold wire for bonding semiconductor devices | |
JP3186408B2 (en) | Multilayer lead frame and manufacturing method thereof | |
JP2010205974A (en) | Semiconductor device | |
KR100461950B1 (en) | conductive wire for a semiconductor package and its manufacturing method, and evaporation method of wire | |
JPS6353287A (en) | Ag-coated electric conductor | |
JPS60236252A (en) | Bonding fine wire for semiconductor | |
JPS639957A (en) | Semiconductor lead frame | |
JP3183283B2 (en) | Method of joining members on flexible wiring board | |
JPH08288447A (en) | Lead frame | |
WO2014137286A1 (en) | Palladium coated copper wire for bonding applications | |
JPH0521538A (en) | Film carrier device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20050603 |