JP2002324725A - Metallized film for capacitor and capacitor using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a metallized film capable of providing a compact and cheap capacitor having an improved self-healing property and a design for a higher potential gradient than conventional ones. SOLUTION: This metallized film for a capacitor comprises evaporated metal electrodes formed on both side surfaces or a single side surface of an insulating film, non-metallized parts (margins) along film edges, and a plurality of non- metallized parts formed on at least one of the evaporated metal electrodes, wherein the plurality of the non-metallized parts are so arranged as not to divide the evaporated metal electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film capacitor and a vapor-deposited film for the capacitor for manufacturing the film capacitor.

[0002]

2. Description of the Related Art In a general film capacitor, a metal vapor deposition film electrode is formed on one or both surfaces of an insulating film, and when a vapor deposition film is formed on one surface, they are paired.
When the vapor deposition film is formed on both sides, the insulating film is paired and wound into a column shape, and after forming the columnar body by pressing, or while maintaining the cylindrical body, a metallikon for extracting an electrode is provided at both ends. The metallized film is electrically connected to the metal deposited film, and the metallikon is connected to each terminal.

Recently, in order to improve the security of this type of film capacitor, for example, Japanese Patent Publication No. 411-1137 has been disclosed.
No. 7, JP-A-10-135072 and JP-A-10-144563, as seen in at least one metal-deposited film electrode of a metal-deposited film,
A technique of forming a large number of electrode portions and a thin fuse portion that conducts these electrode portions to a contact portion with an electrode lead-out metallikon by dividing by a non-evaporated portion called a margin has been put to practical use. In such a film capacitor with a security function, when a short circuit occurs between the vapor-deposited metal films of the respective films, the fuse portion connected to the electrode including the short-circuited portion is blown and loses continuity, and the conduction to the short-circuited portion is stopped.

As described above, in such a capacitor with a security mechanism, the electrode portion connected to the fuse portion becomes invalid every time the fuse portion is blown, so that the capacity of the capacitor is reduced accordingly. Therefore, from the viewpoint of the capacitance stability of the capacitor, in order to reduce the divided electrode area and improve the capacitance stability, the metal-deposited film electrode is divided into a grid shape as disclosed in Japanese Patent Application Laid-Open No. Hei 4-225508. Film capacitors have been proposed. According to such a capacitor, when a short circuit occurs at any one of the electrode portions, all the fuse portions connected to the electrode portion are blown, and only the electrode portion having the small area loses conduction from the surroundings. The reduction will be small.

However, in the case of a vapor deposition film in which a metal vapor deposition film is divided into a grid, as in Japanese Patent Application Laid-Open No. Hei 4-225508, the cost of reducing the area of the divided electrodes is that the metal vapor deposition film is divided into a grid. Since the area of the vapor deposition section becomes large, the required amount of film increases from the beginning of capacitor design, and the price of the film capacitor rises.
The economy was a big problem.

As another example of a film capacitor,
For energy storage and rapid discharge, three or more series capacitors are formed in one capacitor element, and an insulating section is also provided in the film width direction to form a large number of small capacitor networks in parallel in one element. There is a capacitor (Japanese Patent Publication No. 6-18153). This capacitor is
The stored energy of the small capacitor constituted by the one continuous conductor section divided in series and parallel as a counter electrode,
It is 1 joule or less at the rated voltage, and the potential gradient of the plastic film is 150 KV / m at the rated voltage.
m and more than m.

That is, in this capacitor for energy storage and rapid discharge, the capacitor is divided by an insulating portion which is a non-evaporated portion.
By increasing the number of small capacitors, the energy amount of one small capacitor is reduced, the energy flowing into each small capacitor during self-recovery is reduced, insulation recovery is improved, and the withstand voltage performance of the metallized film is improved. It is intended to be used.

In general, improving the self-healing property of a capacitor using a metal-deposited film improves the withstand voltage performance, enables a higher potential design than ever before, and enables the miniaturization and cost reduction of the capacitor.

However, the formation of the insulating portion, which is the non-deposited portion of the metal-deposited film, is not allowed because the metal residue in the non-deposited portion is required to have a high withstand voltage between margins. Accuracy requires sufficient control and processing is difficult, which has been a factor in cost increase.

[0010]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a metal-deposited film which has improved self-healing properties, can be designed with a higher potential than ever before, and can provide a small and inexpensive capacitor. I do.

Another object of the present invention is to provide a small and inexpensive capacitor which has improved self-healing properties and can be designed to have a higher potential than ever before.

[0012]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above object, and a vapor deposition film for a capacitor according to the present invention is a metal vapor deposition film formed on both surfaces or one surface of an insulating film. An electrode, a non-deposited portion (margin) along the film edge, and a metal-deposited film having a plurality of non-deposited portions provided on at least one of the metal-deposited film electrodes; The metal deposition film electrode is arranged so as not to be divided.

That is, the present invention provides a self-healing property of a vapor-deposited metal by providing a metal vapor-deposited film electrode on both surfaces or one surface of an insulating film and a plurality of non-vapor-deposited portions on at least one of the metal vapor-deposited film electrodes. A metal film-deposited film in which characteristics are promoted and a plurality of non-deposited portions are arranged so as not to divide the metal-deposited film electrode is produced, and this is wound to form a capacitor.

The plurality of non-deposited portions of the metal film-deposited film of the present invention have a width (W) of 0.3 mm or less, a length (L) of 1 to 20 mm or less, and a length (L) of 1 to 20 mm. The sum (f) of the width of the deposition portion in the film longitudinal direction and the width of the deposition portion in the film width direction within one interval between the non-deposition portions is preferably 6 mm or less, and more preferably the width of a plurality of non-deposition portions. Is 0.05 to 0.3 mm and the sum (f) of the vapor deposition widths is 1 to 6 mm, so that even if an abnormality occurs during the use of the capacitor, the capacity does not decrease much and the operation without impairing the insulation characteristics. Is obtained.

Further, a plurality of non-evaporated portions are arranged in parallel with each other within an angle of 0 ± 10 ° with respect to the width direction of the film or the width direction of the film. 3 to 50 Ω / □, and the film resistance of the deposited film electrode in the vicinity including the contact portion with the metal lead for electrode extraction is R = 2 to 1
It is preferably set to 2Ω / □.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION A metal-deposited film constituting a capacitor-deposited film according to the present invention is formed by forming a plurality of minute non-deposited portions in a metal-deposited film electrode and allowing the metal-deposited film to exist. In capacitors using
The path of the electric energy flowing into the dielectric breakdown portion of the vapor-deposited film is lengthened, and the electric resistance is increased, so that the concentration of the electric energy can be reduced, and the self-recovery performance of the capacitor is improved.

Further, in the metal-deposited film of the present invention, the film resistance R of the metal-deposited film electrode is R = 3 to 50 Ω / □, preferably R = 3 to 30 Ω / □, more preferably R = 6.0 to Ω / □.
25Ω / □, and the film resistance R of the deposited film electrode in the vicinity including the contact portion with the electrode lead-out metallikon is R = 2 to 1
By setting 2Ω / □, preferably R = 2 to 8Ω / □, more preferably R = 2.5 to 5.0Ω / □, the scattering property of the metal deposition film electrode is stabilized, and the dielectric breakdown portion of the deposition film This has the effect of not maximizing the electric energy flowing into the device.

The "resistance near the portion including the contact portion with the electrode lead-out metallikon" is a resistance measured by cutting a width of about 2 mm from the end of the film opposite to the margin.

In the present invention, the “film resistance value” is measured by J
7. IS C 2316 It is measured according to (7).

Examples of the insulating film used in the present invention include a polypropylene film, a polyethylene terephthalate film, and a polyphenylene sulfide film, but the present invention is not particularly limited thereto.

Examples of the metal to be deposited include single metals such as aluminum, zinc, copper, tin, and titanium, and composite metals thereof. Further, as a means for depositing these metals, a resistance heating method, a high frequency induction heating method, and the like can be used. , An EB heating method, a sputtering method, etc., but none of them limit the present invention.

Hereinafter, a specific embodiment of the deposited film for a capacitor of the present invention will be described with reference to FIGS.

FIG. 1 shows an example of the deposited film for a capacitor of the present invention. FIG. 1A is a perspective view of the first embodiment of the present invention when the capacitor is wound up. (B) FIG. 1 and (b) 2 are partial enlarged views of the metallized film in (b) of FIG.
FIG. 3C is a diagram showing a state where the thickness of the deposited film at the contact portion with the metal lead for electrode lead-out according to the first embodiment of the present invention is increased. FIG. 1D is a view showing a state of a general vapor-deposited film wound on top of this, but is not limited to this, and the vapor-deposited film shown in FIG. It doesn't matter.

The vapor-deposited film for a capacitor shown in FIG. 1 includes a metal-deposited film electrode 2 formed on both sides or one side of an insulating film, a non-deposited portion 1 called a margin along the film edge, and a metal-deposited film electrode. 2. A metal-deposited film having a plurality of non-deposited portions 3 provided on at least one of the metal-deposited portions 3 and a fuse width (F) such that the plurality of non-deposited portions 3 do not divide the metal-deposited film electrode 1. ).

Specifically, when obtaining a metal-deposited film using an insulating film such as a polypropylene (PP) film, an oil for forming a non-deposited portion in one side of the film in the width direction of the film is rolled. The non-deposited portions 3 shown in FIG. 1 are transferred within a range of an angle of 0 ± 10 ° in the width direction of the film by transferring with a letterpress or the like and simultaneously transferring oil to a margin portion or applying oil thereafter. Form a patterned vapor deposition film. In this case, aluminum was used as the metal to be deposited, and the resistance of the deposited film was R = 3.
５０50Ω / □, and the film resistance value of the deposited film electrode in the vicinity including the contact portion with the electrode lead-out metallikon 4 is R = 2 to 12Ω.
/ □. Further, the pattern shape is such that the pattern width W of the non-evaporated portion is 0.3 mm or less and the pattern length L is 1 to 20.
mm, and the sum (f) of the vapor deposition widths is preferably 6 mm or less.

The resistance of the deposited film is measured according to JIS C 2316.
8. According to (7), the film resistance of the deposited film electrode at the contact portion with the electrode lead-out metallikon 4 is expressed by the width 2
mm, and the film resistance of the deposited film electrode at the portion forming the capacitance of the capacitor is measured by the width cut out at the pattern interval along the pattern direction in the remaining portion where the cut width is 10 mm.

The pattern width W of the non-evaporated portion is 0.05 to
It is preferably 0.3 mm. If the pattern width W of the non-deposited portion is smaller than 0.05 mm, the non-deposited width is excessively widened due to the voltage generated by the current flowing into the abnormal portion when the capacitor is abnormal, so that the dielectric film is likely to be deteriorated. Further, when the pattern width W of the non-deposited portion exceeds 0.3 mm, the area of the non-deposited portion becomes larger than the area of the deposited portion, so that a capacity cannot be obtained when a capacitor is formed, and miniaturization is difficult.

Further, the sum (f) of the vapor deposition width is preferably 1 to 6 mm. If the interval between the non-evaporated portions is less than 1 mm, excessive vapor cracking of the deposited film is induced by electric energy flowing into the abnormal portion when an abnormality occurs in the capacitor, the capacity is greatly reduced, and the sum (f) of the evaporation width is 6 mm. If it is larger, cracking of the deposited film occurs, but complete insulation cannot be maintained, which may cause a decrease in the insulation resistance of the capacitor.

Equation 1 below defines the sum (f) of the deposition widths.

(Formula 1) f = F1 + F2 + F3 +... + Fn + P−W The width of the non-deposited portion and the interval between the non-deposited portions are described in
Using a universal projector V-12BSC manufactured by Nikon, measurements were made at 20 points with an arbitrary pattern width P, and the average value was expressed.

This single-sided metallized film FIG.
A metal element for extracting an electrode is applied to both ends of a columnar capacitor obtained by stacking and winding two pieces of (d) to form a capacitor element. External electrode lead-out terminals were connected to metallikons at both ends of the capacitor element, and after being accommodated in a resin case, molded with epoxy resin to form a capacitor.

[0032]

[Embodiment 1] In the metal vapor-deposited film of FIG. 1, a polypropylene (PP) film having a thickness of 5 μm is used as a film, and oil for forming a non-vapor-deposited portion in one side of the film in a film width direction is used. A plurality of non-evaporated portions 3 shown in FIG. 1 are transferred in parallel by a roll-shaped relief plate or the like, and the non-evaporated portions 3 shown in FIG. A deposited film was formed. Aluminum was used for the metal deposited at this time. The thickness of the obtained metal-deposited film was 5 μm, the width was 50 mm, and the capacity of the formed capacitor was 5 μF.

The resistance R of the deposited film was 18 Ω / □, and the resistance R of the deposited film electrode including the contact portion with the metal lead for electrode extraction was 3.5 Ω / □. Further, the shape of the pattern was such that the pattern width of the non-deposition portion was 0.1 mm, the pattern length was 10 mm, and the sum (f) of the deposition width was 4 mm.

[Embodiment 2] The pattern shape at the time of pattern transfer was such that a plurality of non-evaporated portions were parallel to each other at an angle of 5 ° in the longitudinal direction of the film. In this case, the sum (f) of the deposition width was obtained by cutting the length of the film at an arbitrary position at the same value as the film width, and measuring the sum of the deposition portions. Others were prepared in the same steps as in Embodiment 1, and Sample 2 of Embodiment 2 was formed.

(Comparative Example 1) Comparative Example 1 was made in the same process as in Embodiment 1, but the resistance of the deposited film was R = 2Ω / □.
And a film resistance value of a deposited film electrode in the vicinity including a contact portion with the electrode lead-out metallikon was R = 1.5Ω / □.

(Comparative Example 2) Comparative Example 2 was made in the same process as in Embodiment 1, but the resistance of the deposited film was R = 40Ω /
□, and a capacitor in which the film resistance of the deposited film electrode in the vicinity including the contact portion with the metal lead for electrode extraction is R = 10Ω / □.

(Comparative Example 3) As a conventional example, a margin is formed by applying oil to a margin portion when a metal film of a PP film is obtained as a base film, and an aluminum alloy is used as a metal to be deposited. The resistance value is R =
The film resistance of the deposited film electrode in the vicinity including the contact portion with the metal lead for electrode extraction was set to R = 3.5Ω / □. Metallicons for extracting electrodes were applied to both ends of a cylindrical capacitor obtained by using the two single-sided metal vapor-deposited films to form a capacitor element. The capacitor element was housed in a resin case and molded to form a capacitor.

Next, in order to verify the effects of the capacitors obtained in Embodiments 1 and 2, Sample 1 was used.
And 2 and Comparative Examples 1, 2, and 3 were subjected to a life test and a breakdown voltage measurement.

FIG. 2 is a graph in which the breakdown voltage is plotted on the vertical axis.
00V / min. FIG. 3 shows that each capacitor has 7
It is a graph which shows the capacity change as a result of having performed a life test under the conditions of 5 ° C and 310VAC. As shown in FIG. 3, as compared with the capacitors of Sample 1 and Sample 2, the capacitor of Comparative Example 3 having a higher electrode resistance value has a large decrease in capacitance,
The capacity loss after 1,000 hrs from the start of the test was more than -7%.

As can be seen from FIG. 2, the capacitors of Sample 1 and Sample 2 have substantially the same breakdown voltage as the capacitor of Comparative Example 3, but have a variation in the low voltage. Further, Comparative Example 1 is lower than Samples 1 and 2 by 300 to 400 V.

Then, the capacitor element after this destructive test was disassembled and the state of the metallized film was confirmed.
4 (a) and (b), FIGS. 5 (a) and (b) and FIG.
The self-healing shown in (a) and (b) could be confirmed.

FIGS. 4A and 4B show the destruction of the metallized film of Comparative Example 3, in which the self-recovery generation portion 5 and the dielectric strength reduction portion 6 are shown. The dielectric strength-reduced portion 6 has a large shape, and in some places self-healing has not been performed well, indicating the progress of destruction. The self-healing is improved by thickly depositing the contact area with the metal lead for electrode extraction and making the evaporated film main electrode thinner, but incomplete self-recovery still occurs, and the film damage is reduced. It can be seen that the dielectric strength has been reduced.

FIGS. 5 (a) and 5 (b) show the destruction of the metallized film of Comparative Example 1, in which the self-recovery generation portion 5, the dielectric strength reduction portion 6, and the self-recovery portion are shown. The characteristic promoting section 7 is shown. The self-recovery is improved compared to Comparative Example 1 by depositing the contact portion with the electrode lead-out metallikon thickly and making the deposited film main electrode thinner. Complete self-healing occurred, and damage to the film reduced the dielectric strength of the capacitor.

FIGS. 6A and 6B show the destruction of the samples 1 and 2 of Example 1 and Example 2 and the metallized film of Comparative Example 2, respectively. A recovery generation part 5, a dielectric strength reduction part 6, and a self-healing characteristic promoting part 7 are shown. Self-healing has improved, and the imperfect self-healing part has cracks in the deposited metal due to the influx of electrical energy that flows into the incomplete self-healing part through the deposited film between the multiple non-evaporated parts around it. Provoked and encouraged self-healing.

In comparison with Samples 1 and 2 of Examples 1 and 2, Comparative Example 2 had a wide range of cracks in the deposited film, and almost no incomplete self-healing portion was observed, but the capacity was reduced. The film was burned by the healing phenomenon when cracking the deposited film, and a new dielectric breakdown was induced.

FIG. 7A is a view for explaining a state in which a plurality of non-evaporated portions are provided in the width direction of the film.
(B) is a diagram illustrating a state in which a plurality of non-evaporated portions are provided in the longitudinal direction of the film.

FIG. 7A shows a pattern film provided with a plurality of non-deposited portions in the width direction of a film having a margin width M shown in FIG. 1C and a margin width shown in FIG. It is a state figure which laminated | stacked two sheets of the normal vapor deposition film for capacitors of (M). The two films are the same width,
The respective margins are overlapped with a shift width Z such that the margins overlap within the evaporation portion of the other evaporation film overlapped with each other. The plurality of non-deposited portions on at least one of the vapor-deposited films are arranged at predetermined intervals P in the longitudinal direction of the film, and within this one interval, F1, F2,. -The intervals of Fn are alternately provided.

FIG. 7B is a state diagram in the case where the above-mentioned pattern film is provided with a plurality of non-deposited portions in the longitudinal direction of the film. In this case, the plurality of non-deposited portions on at least one of the vapor-deposited films are arranged at a predetermined interval (P) in the width direction of the film, and A- having an interval within this one interval and the same interval as the film width Fw. Within the interval between the cutting line A 'and the cutting line BB', the cutting line AA '
.., Fn are arranged alternately in the direction B '.

[0049]

According to the present invention, since a metal-deposited film in which a plurality of non-deposited portions are formed on the deposited film of the metallized film, the path through which the electric energy flows into the dielectric breakdown portion is lengthened, and the concentration of the electric energy is reduced. Even if the imperfect self-healing part occurs, even if the imperfect self-healing part occurs, a crack in the deposited metal is induced by the influx of electric energy flowing into the imperfect self-healing part through the deposited film between multiple non-evaporated parts around it Since self-healing is promoted, good self-healing performance is expected in a smaller area, and an excellent effect that enables the design of a film capacitor having a high potential gradient closer to the original dielectric strength of the film is achieved.

[Brief description of the drawings]

FIG. 1A is a perspective view of a first embodiment of the present invention when a capacitor is wound up. (B) FIG. 1 and (b) 2 are partial enlarged views of the metallized film in (b) of FIG. (C) shows a state in which the thickness of the deposited film at the contact portion with the electrode lead-out metallikon in the first embodiment of the present invention is increased, and (d) shows a state of a general vapor-deposited film wound on top of this. It is a figure showing a situation.

FIG. 2 is a characteristic diagram for comparing breakdown voltage characteristics of capacitors.

FIG. 3 is a characteristic diagram comparing capacitance changes in a life test of a capacitor.

FIG. 4 (a) is a partial perspective view of Comparative Example 3 showing a broken defect portion of a metallized film. (B) FIG.
It is an abnormal part enlarged view of a figure.

FIG. 5 (a) is a partial perspective view of Comparative Example 1 showing a broken defect portion of a metallized film. FIG. 2B is an enlarged view of the abnormal part in FIG.

FIG. 6 (a) is a partial perspective view of Example 1 showing a broken defect portion of a metallized film. (B) FIG.
It is an abnormal part enlarged view of a figure.

FIG. 7A is a diagram illustrating a state in which a plurality of non-evaporated portions are provided in a width direction of a film, and FIG. 7B is a diagram illustrating a plurality of non-evaporated portions provided in a longitudinal direction of the film. FIG. 9 is a diagram for explaining a state in a case where the state of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Non-vapor deposition part (margin) 2 Metal vapor deposition film electrode (vapor deposition part) 3 Plural non-vapor deposition parts 4 Metallicon for extracting electrodes 5 Self-recovery generation part 6 Dielectric strength reduction part 7 Self-recovery characteristic promoting part W Pattern width L Pattern length f Sum of evaporation width Fn nth fuse width M margin width FW film width P pattern pitch Z shift width AA 'Arbitrary cutting line BB' Cutting line at FW position from AA '

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yuji Tsutsuda 33, Nagafushi, Mishima City, Shizuoka Prefecture 1 Toyo Metallizing Co., Ltd. Mishima Plant F-term (reference) 5E082 AA07 AB04 BB01 BC04 BC31 BC36 EE07 FF05 FG03

Claims (7)

[Claims] 1. A metal-deposited film electrode formed on both or one side of an insulating film, a non-deposited portion (margin) along the film edge, and a plurality of metal-deposited films provided on at least one of the metal-deposited film electrodes. A metal-deposited film having a non-deposited portion, wherein the plurality of non-deposited portions are arranged so as not to divide the metal-deposited film electrode, wherein the capacitor-deposited film is a capacitor-deposited film. The film resistance value of the deposited film electrode in the portion having the capacitance of R = 3-50Ω
/ □, and the film resistance of the deposited film electrode in the vicinity including the contact portion with the electrode lead-out metallikon is R = 2 to 12Ω / □.
Is a deposited film for capacitors. 2. Each of the plurality of non-evaporated portions has a width of 0.3 mm.
The vapor-deposited film for a capacitor according to claim 1, wherein the length is within 1 to 20 mm. 3. The method according to claim 1, wherein the non-deposited portions of the film in the longitudinal direction of the film.
3. The vapor-deposited film for a capacitor according to claim 1, wherein the sum of the width of the vapor-deposited portion in the film longitudinal direction and the width of the vapor-deposited portion in the film width direction within the interval is within 6 mm. 4. The vapor-deposited film for a capacitor according to claim 1, wherein the plurality of non-vapor-deposited portions are arranged in parallel within an angle of 0 ± 10 ° with respect to the width direction of the film. 5. The capacitor-deposited film according to claim 1, wherein the plurality of non-deposited portions are arranged in parallel within a range of an angle of 0 ± 10 ° with respect to a longitudinal direction of the film. 6. A width (margin width) of a non-deposited portion at a cut end of the film opposite to a contact portion of the deposited film electrode with an electrode lead-out metallikon, and two sheets overlapped when forming a capacitor element. The vapor-deposited film for a capacitor according to any one of claims 1 to 5, wherein the plurality of non-vapor-deposited portions are not provided within a range of a shift width (shift width) for connecting a metallikon projecting to one of the films. 7. A film capacitor using the capacitor-deposited film according to claim 1.