JP2002323767A5 - - Google Patents

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Publication number
JP2002323767A5
JP2002323767A5 JP2001157366A JP2001157366A JP2002323767A5 JP 2002323767 A5 JP2002323767 A5 JP 2002323767A5 JP 2001157366 A JP2001157366 A JP 2001157366A JP 2001157366 A JP2001157366 A JP 2001157366A JP 2002323767 A5 JP2002323767 A5 JP 2002323767A5
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JP
Japan
Prior art keywords
composition according
positive photosensitive
photosensitive composition
acid
compound
Prior art date
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Application number
JP2001157366A
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Japanese (ja)
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JP4231635B2 (en
JP2002323767A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2001157366A priority Critical patent/JP4231635B2/en
Priority claimed from JP2001157366A external-priority patent/JP4231635B2/en
Priority to KR1020020009638A priority patent/KR100795109B1/en
Priority to US10/079,414 priority patent/US6858370B2/en
Priority to TW91103178A priority patent/TW548523B/en
Publication of JP2002323767A publication Critical patent/JP2002323767A/en
Publication of JP2002323767A5 publication Critical patent/JP2002323767A5/ja
Application granted granted Critical
Publication of JP4231635B2 publication Critical patent/JP4231635B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【特許請求の範囲】
【請求項1】 (A)活性光線又は放射線の照射により酸を発生する酸発生剤、
(B)単環又は多環の脂環炭化水素構造を有し、酸の作用により分解し、アルカリ現像液中での溶解度が増大する樹脂、
(C)塩基性化合物、及び
(D)フッ素及び/又はシリコン系界面活性剤
を含有し、且つ(A)酸発生剤が、トリアリールスルフォニウム塩を少なくとも1種及びフェナシルスルフォニウム塩構造を有する化合物を少なくとも1種含有する混合物であることを特徴とするポジ型感光性組成物。
【請求項2】 (E)水酸基を含有する溶剤と水酸基を含有しない溶剤とを混合した混合溶剤を含有する請求項1に記載のポジ型感光性組成物。
【請求項3】 (C)塩基性化合物が、イミダゾール構造、ジアザビシクロ構造、オニウムヒドロキシド構造、オニウムカルボキシレート構造、及びアニリン構造から選ばれる構造を有する化合物を少なくとも1種含有する請求項1又は2に記載のポジ型感光性組成物。
【請求項4】 更に(F)酸の作用により分解してアルカリ現像液中での溶解性を増大させる基を有し、分子量3000以下の溶解阻止低分子化合物を含有することを特徴とする請求項1〜3のいずれかに記載のポジ型感光性組成物。
【請求項5】 請求項1〜4のいずれかに記載のポジ型感光性組成物により膜を形成し、当該膜を露光、現像することを特徴とするパターン形成方法。
[Claims]
(A) an acid generator that generates an acid upon irradiation with actinic rays or radiation,
(B) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, decomposed by the action of an acid, and having increased solubility in an alkali developer;
(C) a basic compound, and (D) a fluorine and / or silicon-based surfactant, and (A) the acid generator has at least one triarylsulfonium salt and a phenacylsulfonium salt structure. A positive photosensitive composition, which is a mixture containing at least one compound having the same.
2. The positive photosensitive composition according to claim 1, comprising (E) a mixed solvent obtained by mixing a solvent containing a hydroxyl group and a solvent not containing a hydroxyl group.
3. The method according to claim 1, wherein (C) the basic compound contains at least one compound having a structure selected from an imidazole structure, a diazabicyclo structure, an onium hydroxide structure, an onium carboxylate structure, and an aniline structure. 4. The positive photosensitive composition according to item 1.
4. The composition according to claim 1, further comprising (F) a dissolution inhibiting low molecular weight compound having a group capable of decomposing under the action of an acid to increase solubility in an alkaline developer and having a molecular weight of 3000 or less. Item 4. The positive photosensitive composition according to any one of Items 1 to 3.
5. A pattern forming method comprising: forming a film from the positive photosensitive composition according to claim 1; and exposing and developing the film.

JP2001157366A 2001-02-23 2001-05-25 Positive photosensitive composition Expired - Fee Related JP4231635B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001157366A JP4231635B2 (en) 2001-02-23 2001-05-25 Positive photosensitive composition
KR1020020009638A KR100795109B1 (en) 2001-02-23 2002-02-22 Positive Photosensitive Composition
US10/079,414 US6858370B2 (en) 2001-02-23 2002-02-22 Positive photosensitive composition
TW91103178A TW548523B (en) 2001-02-23 2002-02-22 Positive photosensitive composition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001048602 2001-02-23
JP2001-48602 2001-02-23
JP2001157366A JP4231635B2 (en) 2001-02-23 2001-05-25 Positive photosensitive composition

Publications (3)

Publication Number Publication Date
JP2002323767A JP2002323767A (en) 2002-11-08
JP2002323767A5 true JP2002323767A5 (en) 2006-01-19
JP4231635B2 JP4231635B2 (en) 2009-03-04

Family

ID=26609997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001157366A Expired - Fee Related JP4231635B2 (en) 2001-02-23 2001-05-25 Positive photosensitive composition

Country Status (1)

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JP (1) JP4231635B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101744608B1 (en) * 2011-03-28 2017-06-08 후지필름 가부시키가이샤 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition

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