JP2002319562A - Device and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To excellently wash not only the centers of both the surfaces of a substrate, but also the edges of the substrate. SOLUTION: A top-surface washing part 60 and a reverse-surface washing part 80 arranged above and below a wafer W have washing brushes 66 and 86 respectively, and 1st washing liquid supply nozzles 7 and 8 for supplying 1st washing liquid to the wafer W are arranged nearby the centers of the washing brushes 66 and 86. The 1st washing liquid contains liquid chemicals, such as fluoric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, ammonia, and pure water. In a edge washing box 300 for selectively washing the edge of the wafer W, a 2nd washing liquid supply nozzle is arranged which supplies 2nd washing liquid to the edges of the top and reverse surfaces of the wafer W. The 2nd washing liquid contains an etchant for removing slurry left at the edges of the wafer W and also etching unnecessary thin films and pure water.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor wafer,
The present invention relates to an apparatus and a method for performing processing on various substrates such as a glass substrate for a liquid crystal display device and a PDP (plasma display panel) substrate.

[0002]

2. Description of the Related Art A semiconductor device manufacturing process includes a process of forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of a semiconductor wafer (hereinafter, simply referred to as "wafer"). . For fine processing, the surface of the wafer itself and the surface of the thin film formed on the wafer surface must be kept clean. Therefore, the wafer is cleaned as necessary. For example, after a thin film formed on the surface of a wafer is polished with an abrasive, the slurry (slurry) needs to be removed because the abrasive (slurry) remains on the wafer surface.

FIGS. 11 and 12 show a conceptual configuration of the prior art for cleaning a wafer as described above. That is, the support of the wafer W is achieved by the end faces of the wafer W being sandwiched by the pair of end face support hands 210 and 211. The upper surface of the wafer W has a scrub cleaning member 214 including a disk-shaped base portion 212 and a cleaning brush 213 fixed to the lower surface thereof.
Scrub-washed. That is, in a state where the contact surface 218 of the cleaning brush 213 is in contact with the upper surface of the wafer W, the scrub cleaning member 214 is rotated by a rotation driving mechanism (not shown), The cleaning liquid is discharged, and the upper surface of the wafer W is scrub-cleaned. Similarly, on the lower surface of the wafer W, a scrub cleaning member 217 composed of a disc-shaped base portion 215 and a cleaning brush 216 fixed on the upper surface thereof is used, and the contact surface 219 of the cleaning brush 216 is In a state of being in contact with the lower surface, the cleaning liquid is rotated by a rotation driving mechanism (not shown), and the cleaning liquid is discharged from a nozzle 221 disposed substantially at the center of the cleaning brush 216, so that the lower surface of the wafer W is scrubbed.

[0004] In this configuration, the end face supporting hands 210 and 211 move the wafer W in a circular motion while holding the wafer W so that the center OW of the wafer W follows a circular orbit as shown in FIG. As a result, the contact surfaces 218, 21
9 comes into contact with almost the entire surface of the wafer W,
Almost the entire surface of the wafer W can be scrub-cleaned.

[0005]

By the way, the wafer W
In general, the entire surface is not used for forming a semiconductor device. As shown in FIG. 13, only a central portion 233 excluding a peripheral portion 232 including an upper and lower surface 230 and an end surface 231 in the vicinity of a peripheral portion is formed. This is an effective area used for formation. Therefore, when a thin film is patterned on the surface of the wafer, the film quality, such as the film thickness and the film hardness, differs between the central portion 233 and the peripheral portion 232 of the wafer W.
Therefore, it is originally necessary to change the way of cleaning the central portion 233 of the wafer W and the way of cleaning the peripheral portion 232. For example, it is necessary to remove the slurry remaining in the central portion 233 and to remove the slurry remaining in the peripheral portion 232 and unnecessary thin films by changing the type and concentration of the cleaning liquid used.

However, according to the above-described prior art configuration, since attention is paid only to the central effective area of the wafer W in forming a pattern on the thin film of the wafer W by etching, the peripheral edge 232 of the wafer W An under-etched region remains, which may become an unnecessary thin film. Further, since the wafer W is sandwiched by the pair of end surface support hands 210 and 211, the wafer W
Is always held at a fixed position. For this reason, since the cleaning brushes 213 and 216 cannot enter the periphery of the holding position, it becomes impossible to clean the entire area of the peripheral portion 232 of the wafer W, and the slurry is transferred to the peripheral portion 232 of the wafer W. It may remain.

If an unnecessary thin film and slurry remain on the peripheral portion 232 of the wafer W, the thin film reacts with the slurry, and the resulting substance may remain on the peripheral portion 232 of the wafer W. . As described above, in the above-described configuration of the related art, there is a problem that an unnecessary thin film or slurry or a reaction product of the thin film and the slurry remains on the peripheral portion 232 of the wafer W. In this case, since these substances become particles, the yield is reduced in the manufacturing process of the semiconductor device, which has been a serious problem.

Accordingly, an object of the present invention is to solve the above-mentioned technical problems and to provide a substrate processing apparatus and a substrate processing method which can clean not only the central portions on both sides of the substrate but also the peripheral portion of the substrate. It is.

[0009]

Means for Solving the Problems and Effects of the Invention According to the first aspect of the present invention, there is provided a substrate rotating means for rotating a substrate, and a rotating means for rotating the substrate. Cleaning liquid supply nozzles (7, 8) for discharging a cleaning liquid to the center of both surfaces of the substrate to be etched; 351). Alphanumeric characters in parentheses indicate corresponding components and the like in embodiments described later.

According to the present invention, it is possible to clean the center of both surfaces of the substrate with the cleaning liquid discharged from the cleaning liquid supply nozzle, and to clean the peripheral portion of the substrate with the etching liquid discharged from the etching liquid supply nozzle. it can.
The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the substrate processing apparatus selectively cleans a central portion and a peripheral portion of the substrate. According to the present invention, for example, it is possible to employ a cleaning method according to the film quality of the thin film formed at the central portion and the peripheral portion of the substrate,
Not only the central part of the substrate but also the peripheral part of the substrate can be cleaned well.

As a result, for example, when an unnecessary thin film remains on the periphery of the substrate, the unnecessary thin film can be satisfactorily removed. Further, when the slurry remains on the peripheral portion of the substrate, the slurry can be satisfactorily removed. As a result, there is no generation of a reaction product between the slurry and the thin film. The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, wherein the substrate processing apparatus cleans the substrate after the CMP processing.

[0012] CMP (Chemical Mechanical Polishin)
g) In the treatment, the thin film formed on the surface of the substrate is polished with an abrasive, so that the abrasive remains as a slurry or an unnecessary thin film remains on the surface of the substrate after the CMP treatment. Or According to the invention of claim 3, CM
Slurry and unnecessary thin films remaining on the surface of the substrate after the P treatment can be favorably removed, and the entire substrate after the CMP treatment can be favorably washed. Therefore, a high-quality semiconductor device can be provided.

[0013] According to a fourth aspect of the present invention, the etching solution may be a solution for removing slurry remaining on the peripheral edge of the substrate. Further, as described in claim 5, the etching liquid may be a liquid for removing an unnecessary thin film remaining on the peripheral portion of the substrate, or a slurry and a slurry remaining on the peripheral portion of the substrate. It may be a liquid for removing an unnecessary thin film. Further, when the etching solution is a solution for removing at least an unnecessary thin film (slurry may be removed), the thin film may be an oxide film, an aluminum film, or the like. Any one of a copper film and a tungsten film may be used.

[0014] In this case, it is preferable that the etching liquid is one corresponding to the type of the thin film. For example,
When the thin film is an oxide film, the etching solution preferably contains hydrofluoric acid. Further, when the thin film is an aluminum film as described in claim 8, the etching solution preferably contains a mixed solution of phosphoric acid, acetic acid, and nitric acid. When the thin film is a copper film, the etching solution preferably contains a mixed solution of nitric acid and hydrochloric acid or a mixed solution of nitric acid and hydrofluoric acid. Further, when the thin film is a tungsten film, the etching solution contains a mixed solution of acetic acid, nitric acid and hydrofluoric acid, or a mixed solution of nitric acid and hydrofluoric acid. Is preferred.

On the other hand, as described in claim 11, the cleaning solution may contain a chemical such as hydrofluoric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, and ammonia. The cleaning liquid may contain pure water. The invention according to claim 13 is a central part cleaning step of discharging a cleaning liquid to the central part of both sides of the substrate while rotating the substrate, and cleaning the central part of both sides of the substrate. And discharging the etchant toward the peripheral edge of the substrate to etch the peripheral edge of the substrate.

According to this method, the same effect as the effect described in claim 1 can be obtained. In addition, as described in claim 14, the central portion cleaning step and the peripheral edge etching step may be performed in one processing chamber. Further, the central portion cleaning step and the peripheral edge etching step may be performed simultaneously.

[0017]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing a configuration of a wafer cleaning apparatus which is a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of FIG.
It is II sectional drawing, a part is abbreviate | omitted and a part is shown notionally. This apparatus uses a CMP (Chemical Mechanical Polishing) method for polishing a thin film formed on the surface of a wafer W.
g) For removing slurry and unnecessary thin film remaining on the surface of the wafer W after the processing is performed, the processing chamber 5 having a substantially rectangular shape in a plan view surrounded by the side walls 1, 2, 3, and 4. And a wafer holding device 6 capable of holding the wafer W horizontally in the processing chamber 5 and rotating the wafer W in this state.

This apparatus further comprises a double-sided cleaning device 9 for scrubbing and removing the slurry remaining at the center of each of the upper and lower surfaces of the wafer W held by the wafer holding device 6, and a wafer holding device 6 Cleaning box 300 for selectively cleaning only the periphery including the upper and lower surfaces and the end surface near the periphery of wafer W held by wafer
It has. That is, the slurry or unnecessary thin film remaining on the peripheral portion of the wafer W is removed by the peripheral portion cleaning box 300.

The wafer holding device 6 includes a pair of holding hands 1 that are opposed to each other in a direction A (hereinafter, referred to as a “holding direction”) orthogonal to the side wall 2 or 4 of the processing chamber 5.
0,30. The holding hands 10 and 30 are movable in the holding direction A, and the base mounting portions 11 and
It has base portions 12 and 32 attached to 31, and three holding rollers 13 and 33 for holding the wafer W, which are arranged above the base portions 12 and 32, respectively. These holding rollers 13 and 33 are connected to the wafer W
Are arranged on the circumference corresponding to the shape of the end face. The wafer W is held in a state where the end surfaces thereof are in contact with the side surfaces of the holding rollers 13 and 33.

The base mounting portions 11 and 31 have a holding direction A
Hole 1 formed in the side walls 2 and 4
One ends of hand shafts 15 and 35 extending to the outside of the side walls 2 and 4 via the bases 4 and 34 are connected. Hand axis 15,3
At the other end of 5, rods 18, 38 of cylinders 17, 37 fixed on mounting plates 16, 36 outside the side walls 2, 4 are attached via connecting plates 19, 39. The rods 18 and 38 can be protruded or retracted along the holding direction A. With this configuration, the holding hands 1 are driven by driving the cylinders 17 and 37.
0 and 30 can be moved back and forth in the opposite direction along the holding direction A, and the wafer W can be held between the holding rollers 13 and 33, and this holding can be released.

Reference numerals 20 and 40 denote bellows which can expand and contract with the movement of the holding hands 10 and 30.
The first cleaning liquid and the second cleaning liquid used in the double-sided cleaning device 9 and the peripheral edge cleaning box 300, and their atmosphere do not affect the hand shafts 15, 35, or outside the processing chamber 5. This is to prevent leakage. It is also for preventing particles generated from the rods 18 and 38 of the cylinders 17 and 37 and the hand shafts 15 and 35 from entering the inside of the processing chamber 5.

The holding rollers 13 and 33 rotate the base 1 to rotate the wafer W while holding the wafer W.
2, 32 are provided rotatably. That is, the holding rollers 13 and 33 are supported by the base portions 12 and 32 such that the holding rollers 13 and 33 are rotatable about a vertical axis.
1, 41 are fixed. The driving force required to rotate the wafer W is given only to the holding roller 33. That is, the driving force of the motor M ₁ attached to the motor attachment plate 42 provided outside the side wall 4 is transmitted to the center holding roller 33 b of the holding rollers 33 via the belt 43. Has become. Further, the driving force transmitted to the central holding roller 33b is also transmitted to the other two holding rollers 33a and 33c via the belts 44 and 45.

This will be described in more detail. As shown in FIG. 3, the roller shaft 41a of the holding roller 33a extends through an insertion hole 46a formed in the base 32 to a space 47 formed near the lower end of the base 32. Insertion hole 4
It is rotatably supported by the base part 32 via two bearings 47a and 48a arranged in 6a. Similarly, the roller shafts 41b and 41c of the other two holding rollers 33b and 33c also extend to the space 47 through the insertion holes 46b and 46c, and are arranged in the insertion holes 46b and 46c. 48b: rotatably supported by the base portion 32 via 47c and 48c.

Three pulleys 49b, 50b and 51b are mounted on the central roller shaft 41b. Among Between the uppermost pulley 49b and the pulley 53 attached to the drive shaft 52 of the motor M ₁ (see Figure 2), the belt 43 is wound. Then, the remaining two pulleys 50b, 51b and the other two roller shafts 41c, 41
The belts 45 and 44 are respectively wound around the pulleys 51c and 51a attached to a.

[0025] With the above structure, when the center of the holding roller 33b is driven by a motor M _1, the other two holding rollers 33a Along with this, 33c are driven.
As a result, the wafer W held by the holding rollers 13 and 33 starts rotating. At this time, the holding roller 13
Rotate as the wafer W rotates. In this manner, the wafer W rotates in the rotation direction B while being held by the holding rollers 13 and 33. The rotation speed of wafer W in this case is, for example, about 10 to 20 (rotation /
Minute).

Returning to FIG. 2, the double-sided cleaning device 9 includes an upper surface cleaning unit 60 and a lower surface cleaning unit 80 arranged above and below the wafer W held by the wafer holding device 6. The upper surface cleaning unit 60 and the lower surface cleaning unit 80 are arranged at positions that do not interfere with the holding hands 10 and 30 so as to cover the surface area of the wafer W from the center to the peripheral edge of the wafer W. The upper surface cleaning unit 60 and the lower surface cleaning unit 80 have mounting surfaces 61, 8 on the side facing the wafer W.
1 and base portions 62 and 82
And rotating shafts 63 and 83 attached thereto, and can be rotated in a rotation direction C about a rotation axis O along a vertical axis direction by rotation driving units 64 and 84.

Further, the upper surface cleaning unit 60 and the lower surface cleaning unit 80 can be moved in the vertical direction by lifting / lowering driving units 65 and 85, respectively. Accordingly, the wafer W can be sandwiched between the upper surface cleaning unit 60 and the lower surface cleaning unit 80 during the wafer cleaning, and the upper surface cleaning unit 60 and the lower surface cleaning unit 80 can be separated from the wafer W after the wafer cleaning. I can do it. Each mounting surface 61 of the upper base portion 62 and the lower base portion 82,
81 is provided with cleaning brushes 66 and 86.
Near the center of the cleaning brushes 66, 86, a first cleaning liquid supply nozzle 7, for supplying a first cleaning liquid to the wafer W,
8 are arranged respectively. The first cleaning liquid includes a chemical such as hydrofluoric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, and ammonia, and pure water.

Cleaning pipes 67 and 87 are connected to the first cleaning liquid supply nozzles 7 and 8, respectively. Cleaning pipe 6
Reference numerals 7 and 87 are inserted into the rotating shafts 63 and 83 so as not to rotate, and the other end thereof is provided with a chemical supply path through which chemicals are guided from a chemicals tank (not shown) via first three-way valves 68 and 88. 69, 89, and pure water supply paths 70, 90 through which pure water is guided from a pure water tank (not shown). With this configuration, by controlling the switching of the first three-way valves 68 and 88, the chemical solution and pure water can be selectively supplied to the cleaning pipes 67 and 87. Therefore, the chemical solution and pure water can be supplied from the first cleaning solution supply nozzles 7 and 8. Water can be selectively discharged.

FIG. 4 is a side view showing a configuration of the peripheral edge cleaning box 300 and a configuration related to the peripheral edge cleaning box 300. The peripheral edge cleaning box 300 can be moved up and down by the elevation / horizontal movement mechanism 301, and can be moved in a direction approaching the wafer W and in a direction away from the wafer W. More specifically, the peripheral edge cleaning box 300 is supported by a box support plate 303 fixed to an upper surface of a movable plate 302 included in the lifting / horizontal movement mechanism 301. Lifting / horizontal movement mechanism 3
01 has a base 304. The lower ends of two guide shafts 305 extending upward are fixed to the base 304.

The guide shaft 305 is slidably inserted through a ball bush 306 fixed to the lower surface of the movable plate 302, and passes through holes (not shown) formed in the movable plate 302 and the box support plate 303, respectively. It extends to above the box support plate 303, and at its upper end, the connecting plate 3
07. The base 304 is provided with a cylinder 309 with the tip of the rod 308 facing upward. The movable plate 302 is supported by the rod 308 of the cylinder 309. With this configuration, when the rod 308 of the cylinder 309 moves up and down in the vertical direction, the peripheral edge cleaning box 300 moves in the vertical direction.

The base 304 is screwed with a ball screw shaft 310 extending in a direction approaching the wafer W and in a direction away from the wafer W. A pulley 311 is attached to the ball screw shaft 310.
Pulley 3 attached to the drive shaft 312 of the motor M ₂ and
13, a belt 314 is wound around. With this configuration, when the driving force of the motor M ₂ is transmitted to a ball screw shaft 310 via the belt 314, the base 304 is moved in the direction away from the direction and the wafer W adjacent to the wafer W, along with this And the peripheral edge cleaning box 300
Move in a direction approaching the wafer W and in a direction away from the wafer W. At this time, the connecting plate 307 is guided by a rail (not shown) in a direction approaching the wafer W and a direction away from the wafer W.

On the opposing surface 300a of the peripheral edge cleaning box 300 facing the wafer W, the peripheral edge cleaning box 3 is provided.
00, a concave portion 320 is formed along the longitudinal direction,
The periphery of the wafer W can be received between the upper wall surface 330 and the lower wall surface 350 of the recess 320. Upper wall 330 and lower wall 3 of recess 320
A second cleaning liquid supply nozzle 331 for supplying a second cleaning liquid to the peripheral portions of the upper surface and the lower surface of the wafer W is provided at 50.
351 are provided. Second cleaning liquid supply nozzle 33
1, 351 is made of a resin such as PVC or PVDF. The second cleaning liquid includes an etching liquid for removing the slurry remaining on the peripheral edge of the wafer W, etching an unnecessary thin film, and pure water. The etchant is
Different types are used depending on the type of thin film formed on the peripheral portion of the wafer W. Specifically, an oxide film (Si
O ₂ ), aluminum film (Al), copper film (Cu) and tungsten film (W), respectively,
An etching solution represented by the chemical formula of the formula (4) is used.

HF (1) H ₃ PO ₄ + CH ₃ COOH + HNO ₃ (2) HNO ₃ + HCl or HNO ₃ + HF (3) CH ₃ COOH + HNO ₃ + HF or HNO ₃ + HF (4) The second cleaning liquid supply nozzles 331 and 351 have a liquid discharge path 3
One end of each of 32 and 352 is connected. Liquid discharge path 33
The second three-way valve 333 and the other end of the second
An etching solution supply path 334 to which an etching solution is supplied from an etching solution tank (not shown) via 353.
354 and pure water supply paths 335 and 355 to which pure water is supplied from a pure water tank (not shown). With this configuration, by controlling the switching of the second three-way valves 333 and 353, the etching liquid and pure water can be selectively supplied to the liquid discharge paths 332 and 352. Therefore, the etching liquid is supplied from the second cleaning liquid supply nozzles 331 and 351. And pure water can be selectively discharged.

The upper wall surface 330 and the lower wall surface 350 of the concave portion 320 are provided with an inert gas such as nitrogen (N ₂ ) or air (hereinafter referred to as “gas”) on the upper and lower peripheral edges of the wafer W. )) To supply PVC or PV
Gas supply nozzle 336,3 made of resin such as DF
56 are provided. Gas supply nozzles 336, 356
Is connected to the other ends of gas supply paths 337 and 357, one ends of which are connected to a gas tank (not shown). In the middle of the gas supply passages 337, 357, a gas valve 338,
358 are interposed. With this configuration, the gas valve 3
By controlling the opening and closing of 38 and 358, gas can be discharged from the gas supply nozzles 336 and 356 as needed.

The gas supply nozzles 336 and 356 are arranged on the side closer to the center of the wafer W with respect to the second cleaning liquid supply nozzles 331 and 351 at an angle such that the gas is discharged toward the peripheral edge of the wafer W. Have been. With this configuration,
The chemical and pure water supplied from the second cleaning liquid supply nozzles 331 and 351 to the upper and lower peripheral portions of the wafer W can be discharged toward the outside of the wafer W by the discharge pressure of the gas. Therefore, the etching liquid supplied from the second cleaning liquid supply nozzles 331 and 351 is
Never reach the center. This prevents a problem that the thin film in the central portion (effective area) of the wafer W on which the thin film necessary for manufacturing the semiconductor device is formed is etched.

An exhaust port 360 is formed at the back of the recess 320, and an exhaust pipe 361 made of a resin such as PVC or PVDF is connected to the exhaust port 360. A negative pressure source 362 is connected to the exhaust pipe 361, and the atmosphere at the peripheral portion of the wafer W is changed by the negative pressure source 362.
1 is to be sucked. That is, the exhaust pipe 3
61 and the negative pressure source 362 constitute an exhaust unit.
As a result, the chemical solution and the pure water discharged to the outside of the wafer W by the discharge pressure of the gas are sucked into the exhaust pipe 361 through the exhaust port 360.

In the middle of the exhaust pipe 361, the liquid pool 3
63 are provided. A drain discharge path 364 extends downward from the liquid reservoir 363. With this configuration, the chemical solution and the pure water guided to the exhaust pipe 361 accumulate in the liquid reservoir 363 and are discharged from the drain discharge path 364, and gas-liquid separation is performed. FIG. 5 is a block diagram showing a main electrical configuration of the wafer cleaning apparatus. This wafer cleaning apparatus is provided with a control unit 100 constituted by a microcomputer or the like functioning as a control center of the apparatus. The control unit 100 controls the cylinders 17 and 37 according to a control program stored in the ROM 101.
The motor M ₁ , the rotation drive units 64 and 84, the elevation drive unit 65,
85 and the first three-way valves 68 and 88 are controlled. Also,
Control unit 100 includes a cylinder 309, controls the motor M _2, the second three-way valve 333,353 and gas valve 338,358.

Next, the cleaning operation of the wafer cleaning apparatus will be described. Before cleaning, the holding hands 10, 3
Numeral 0 stands by at a standby position retracted from the holding position for holding the wafer W, and the upper surface cleaning unit 60 and the lower surface cleaning unit 80 also stand by at a distance from the wafer W. When the wafer W is transferred by the transfer arm (not shown) after the CMP process, which is the previous process, is completed, the control unit 100 causes the rods 18 and 38 of the cylinders 17 and 37 to retract.
As a result, the holding hands 10, 30 approach each other. As a result, the wafer W is held at its end face by the holding roller 1.
3, 33. Thereafter, the control unit 100 drives the rotation driving units 64 and 84 to rotate the upper surface cleaning unit 60 and the lower surface cleaning unit 80. At the same time, the control unit 100
Controls the first three-way valves 68 and 88,
89 and the cleaning pipes 67 and 87 are connected. As a result, the chemical liquid is supplied from the first cleaning liquid supply nozzles 7 and 8 to the upper surface and the lower surface of the wafer W, respectively.

[0039] Thereafter, the control unit 100 drives the motor M _1. As a result, the holding roller 33 is driven to rotate. Along with this, the wafer W rotates at a low speed. further,
The control unit 100 controls the elevation drive units 65 and 85 to move the upper surface cleaning unit 60 and the lower surface cleaning unit 80 in directions approaching each other. As a result, the wafer W held by the holding rollers 13 and 33 is sandwiched between the cleaning brushes 66 and 86, and the wafer W is held by the cleaning brushes 66 and 86.
Are rubbed on the upper and lower surfaces. As a result, the cleaning brush 6 is supplied while the upper and lower surfaces of the wafer W are supplied with the chemical solution.
6, 86 scrub cleaning. As a result, the slurry remaining on the upper and lower surfaces of the wafer W is removed.

After a lapse of a predetermined time, the control unit 100 controls the elevation drive units 65 and 85 to move the upper surface cleaning unit 60 and the lower surface cleaning unit 80 away from the wafer W, and the cleaning brush Separate 66, 86. After that, the first three-way valves 68 and 88 are controlled to connect the cleaning pipes 67 and 87 and the pure water supply paths 70 and 90. As a result, pure water is supplied from the first cleaning liquid supply nozzles 7 and 8 to the upper and lower surfaces of the wafer W, and the chemicals and the like remaining on the upper and lower surfaces of the wafer W are washed away.

Thereafter, the control unit 100 controls the first three-way valve 6
8 and 88 to stop the discharge of pure water from the first cleaning liquid supply nozzles 7 and 8, and to stop the driving of the rotation drive units 64 and 84 to rotate the upper surface cleaning unit 60 and the lower surface cleaning unit 80. To stop. Furthermore, the driving of the motor M ₁ is stopped to stop the rotation of the wafer W. Thus, the scrub cleaning process in the double-sided cleaning device 9 ends. After the end of the scrub cleaning process, the control section 100 executes a cleaning process of the peripheral portion of the wafer W by the peripheral portion cleaning box 300.

FIGS. 6 and 7 are illustrative views for explaining this peripheral edge cleaning process. 6 and 7, the upper side shows the configuration when the wafer W is viewed from the side, and the lower side shows the configuration when the wafer W is viewed from above. The peripheral edge cleaning box 300 includes the double-sided cleaning device 9.
As shown in FIG. 6A, while the scrub cleaning is performed, the position is horizontally away from the wafer W,
Further, it is waiting at a waiting position below the wafer W.

When the scrub cleaning process by the double-sided cleaning device 9 is completed, the control unit 100 drives the cylinder 309 so that the rod 308 extends upward. as a result,
The peripheral edge cleaning box 300 moves upward. The driving of the cylinder 309 is stopped at the timing when the concave portion 320 of the peripheral edge cleaning box 300 becomes substantially the same height as the wafer W (see FIG. 6B). After that, the control unit 100
By driving the motor M ₂ , the peripheral edge cleaning box 300 is moved in a direction approaching the wafer W. This motor M
The driving of ₂ is stopped at a timing when the peripheral portion of the wafer W enters the concave portion 320 of the peripheral portion cleaning box 300 by a predetermined distance (see FIG. 6C). In this case, for example, when the area of the peripheral portion to be cleaned differs depending on the lot of wafer W, the moving amount of the peripheral portion cleaning box 300 is adjusted according to the lot of each wafer W. This completes the preparation before the peripheral edge cleaning.

Thereafter, the control unit 100 drives the motor M ₁ to start the rotation of the wafer W (see FIG. 7A).
Further, the second three-way valves 333 and 353 are controlled to connect the etching liquid supply paths 334 and 354 to the liquid discharge paths 332 and 352. As a result, the second cleaning liquid supply nozzles 331, 3
The etching liquid is discharged from 51. As a result, the slurry remaining on the peripheral portion of the wafer W is removed, or an unnecessary thin film is etched.

Further, the control unit 100 opens the gas valves 338 and 358 simultaneously with the discharge of the etching liquid, and discharges the gas from the gas supply nozzles 336 and 356. The discharge pressure of this gas causes the second cleaning liquid supply nozzle 33
The etchant discharged from the nozzles 1 and 351 is prevented from scattering to the center of the wafer W, and the discharged etchant is discharged to the outside of the wafer W. On the other hand, the atmosphere near the periphery of the wafer W is sucked by the exhaust pipe 361. Therefore, the etchant discharged to the outside of the wafer W is sucked into the exhaust pipe 361, temporarily stored in the liquid pool 363, and then discharged through the drain discharge path 364. The etching solution atmosphere is discharged to the negative pressure source 362 side.

After this etching process is performed over the entire circumference of the wafer W for a predetermined etching process time, the control unit 100 controls the second three-way valves 333 and 353 to supply the pure water supply paths 335 and 355. To the liquid discharge paths 332, 35
2 As a result, the second cleaning liquid supply nozzle 33
Pure water is discharged from 1,351, and the etchant remaining on the surface of the peripheral portion of the wafer W is washed away. Also,
The etching liquid remaining in the liquid discharge paths 332 and 352 is also washed away at the same time.

When the pure water cleaning process is performed over the entire circumference of the wafer W for a predetermined pure water cleaning process time, the control unit 100 stops the motor M ₁ to stop the rotation of the wafer W, In addition, the controller controls the second three-way valves 333 and 353 to stop the discharge of pure water from the second cleaning liquid supply nozzles 331 and 351, and further closes the gas valves 338 and 358 to close the gas supply nozzles 336 and 356. Is stopped (see FIG. 7B). Thus, the peripheral edge cleaning processing by the peripheral edge cleaning box 300 ends.

After the peripheral edge cleaning process is completed, the control unit 100
Drives the motor M _2, is moved in a direction separating the periphery flush box 300 from the wafer W (see FIG. 7 (c)). Also, the cylinder 3 is moved so that the rod 308 is retracted.
09 is driven to lower the peripheral edge cleaning box 300 (see FIG. 7D). Thereby, the peripheral edge cleaning box 3
00 is returned to the original standby position. As described above, according to the present embodiment, only the peripheral portion of the wafer W can be selectively cleaned, so that cleaning corresponding to the film quality of the peripheral portion of the wafer W can be performed. Therefore, even when an unnecessary thin film on the peripheral portion of the wafer W remains, the thin film can be surely removed. Further, even when the slurry remains on the peripheral portion of the wafer W, the slurry can be surely removed. As a result, there is no generation of a reaction product between the slurry and the thin film. Therefore, the entire wafer W after the CMP processing can be favorably cleaned. Therefore, a high-quality semiconductor device can be provided.

In addition, after cleaning the central portion of the wafer W, the peripheral portion of the wafer W is cleaned, and the etching solution or the like supplied to the peripheral portion of the wafer W and subjected to processing is discharged by the gas discharge pressure. , The etching liquid supplied to the peripheral portion of the wafer W does not scatter to the central portion of the cleaned wafer W.
Therefore, the entire surface of the wafer W can be favorably cleaned. The description of one embodiment of the present invention is as described above, but the present invention is not limited to the above-described embodiment. For example, in the above embodiment, the case where the central portion and the peripheral portion of the wafer W are cleaned in one processing chamber 5 is described as an example. For example, the central portion of the wafer W is cleaned in the first processing chamber. After cleaning, the peripheral portion of the wafer W may be cleaned in another second processing chamber.
In this case, in order to clean the peripheral portion of the wafer W, for example, a curtain-type peripheral portion cleaning apparatus as shown in FIGS. 8 to 10 may be employed.

FIG. 8 is a conceptual view of the curtain-type peripheral edge cleaning device as viewed from the side, and FIG. 9 is a conceptual diagram of the curtain-type peripheral edge cleaning device as viewed from above. This curtain-type peripheral edge cleaning apparatus includes a vacuum chuck 400 for holding and rotating the center of the lower surface of the wafer W by vacuum suction and holding the wafer W, and a vacuum chuck 400 above and below the wafer W held by the vacuum chuck 400. An exhaust pipe 403 having a pair of disposed manifolds 401 and an exhaust port 402 is provided so that the exhaust port 402 is located so as to face the end surface of the wafer W held by the vacuum chuck 400. .

As shown in FIG. 10, the manifold 401 has an annular shape corresponding to the shape of the end face of the wafer W.
A plurality of cleaning liquid supply nozzles 404 and a plurality of gas supply nozzles 405 are provided on a pair of surfaces 401a facing the wafer W.
Is provided. From the cleaning liquid supply nozzle 404, the etching liquid and pure water supplied through the cleaning liquid supply path 406 can be selectively discharged. That is, the etching solution and the pure water can be selectively supplied to the peripheral portion of the wafer W from above and below in a curtain shape. The gas supply nozzle 40
From 5, the gas supplied via the gas supply path 407 can be discharged. The gas discharge direction in the gas supply nozzle 405 is as shown in FIG.
The direction is directed to the peripheral portion of the wafer W. Thus, the etching liquid and pure water supplied to the peripheral portion of the wafer W from the cleaning liquid supply nozzle 404 can be discharged toward the outside of the wafer W by the discharge pressure of the gas.

As shown in FIG. 9, three exhaust pipes 403 are provided around the wafer W, and have an arc shape corresponding to the end face shape of the wafer W in plan view. Each exhaust pipe 40
Numeral 3 can be moved by the horizontal drive unit 408 in a direction approaching the wafer W and in a direction away from the wafer W. With this configuration, when the wafer W is carried, the exhaust pipe 403 does not interfere with the wafer W.
Can be retracted from the processing position, and the exhaust pipe 403 can be arranged at the processing position near the wafer W during processing. Further, the exhaust pipe 403 is connected to a negative pressure source (not shown) so as to suck the atmosphere around the peripheral portion of the wafer W.

During processing, the wafer W is rotated while being held by the vacuum chuck 400. Further, the etching liquid is discharged from the cleaning liquid supply nozzle 404, and the gas is discharged from the gas supply nozzle 405. As a result, the slurry or unnecessary thin film remaining on the peripheral portion of the wafer W is removed by the etching liquid discharged from the cleaning liquid supply nozzle 404, and the etching liquid supplied to the wafer W at this time is changed by the gas discharge pressure. It is exhaled toward the outside of W. The discharged etchant is sucked into the exhaust pipe 403 through the exhaust port 402 and discharged outside the apparatus. Thereafter, pure water is discharged from the cleaning liquid supply nozzle 404, and the etching liquid remaining on the surface of the wafer W is washed away.

As described above, also according to this configuration, the central portion and the peripheral portion of the wafer W can be selectively cleaned. The entire surface can be cleaned well. Further, in the above embodiment, as shown in FIGS. 1 to 7, a configuration in which the wafer W is held by the six holding rollers 13 and 33 is described as an example. It is sufficient that at least three or more rollers are provided. In this case, the driving force may be transmitted to only one of the three or more holding rollers.
Also with this configuration, the wafer W can be rotated while being held at the end face.

Further, in the above embodiment, the cleaning of the central portion and the peripheral portion of the wafer W is performed at different timings. For example, the central portion and the peripheral portion of the wafer W are cleaned using the same type of liquid. In the case of physically and chemically cleaning, respectively, the above-described cleaning may be performed simultaneously. Furthermore, in the above embodiment, the CMP
The case where the cleaning of the wafer W after the processing is performed has been described as an example. However, the present invention is not limited to the case where the cleaning is performed after the CMP processing, and it is necessary to selectively clean the central portion and the peripheral portion of the wafer W. Can be widely applied.

Further, in the above embodiment, the case where the wafer W is cleaned is described.
The present invention can be widely applied to cleaning of various other substrates such as a glass substrate for a liquid crystal display device and a PDP (plasma display panel) substrate. In addition, it is possible to make various design changes within the scope described in the claims.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a configuration of a wafer cleaning apparatus that is a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1, in which some parts are omitted and some parts are conceptually shown.

FIG. 3 is a diagram for explaining a driving mechanism of a holding roller.

FIG. 4 is a side view showing a configuration of a peripheral edge cleaning box.

FIG. 5 is a block diagram showing a main electrical configuration of the wafer cleaning apparatus.

FIG. 6 is an illustrative view showing a wafer peripheral portion cleaning process;

FIG. 7 is also an illustrative view for explaining a wafer peripheral portion cleaning process;

FIG. 8 is a diagram illustrating a configuration of a wafer cleaning apparatus, which is a substrate processing apparatus according to another embodiment of the present invention, as viewed from a side.

FIG. 9 is a diagram showing a configuration as viewed from above a wafer cleaning apparatus which is a substrate processing apparatus according to another embodiment of the present invention.

FIG. 10 is a perspective view for explaining a configuration of a manifold.

FIG. 11 is a view of the configuration of a conventional device as viewed from above.

FIG. 12 is a side view of a configuration of a conventional device.

FIG. 13 is a view for explaining a central portion and a peripheral portion of the wafer.

[Explanation of symbols]

 Reference Signs List 6 Wafer holding device 7 First cleaning liquid supply nozzle 8 First cleaning liquid supply nozzle 9 Double-sided cleaning device 331 Second cleaning liquid supply nozzle 351 Second cleaning liquid supply nozzle W Wafer

Claims (15)

[Claims] 1. A substrate rotating means for rotating a substrate, a cleaning liquid supply nozzle for discharging a cleaning liquid to the center of both surfaces of the substrate rotated by the substrate rotating means, and a peripheral portion of the substrate rotated by the substrate rotating means A substrate processing apparatus, comprising: an etching solution supply nozzle for discharging an etching solution toward the substrate. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus selectively cleans a central portion and a peripheral portion of the substrate. 3. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus cleans a substrate after the CMP processing. 4. The substrate processing apparatus according to claim 1, wherein the etching liquid is a liquid for removing a slurry remaining on a peripheral portion of the substrate. 5. The substrate processing apparatus according to claim 1, wherein the etching liquid is a liquid for removing an unnecessary thin film remaining on a peripheral portion of the substrate. 6. The substrate processing apparatus according to claim 5, wherein said thin film is any one of an oxide film, an aluminum film, a copper film, and a tungsten film. 7. The substrate processing apparatus according to claim 6, wherein said thin film is an oxide film, and said etching solution contains hydrofluoric acid. 8. The substrate processing apparatus according to claim 6, wherein said thin film is an aluminum film, and said etching solution contains a mixed solution of phosphoric acid, acetic acid and nitric acid. 9. The substrate processing apparatus according to claim 6, wherein said thin film is a copper film, and said etching solution contains a mixed solution of nitric acid and hydrochloric acid or a mixed solution of nitric acid and hydrofluoric acid. apparatus. 10. The method according to claim 6, wherein said thin film is a tungsten film, and said etching solution contains a mixed solution of acetic acid, nitric acid and hydrofluoric acid or a mixed solution of nitric acid and hydrofluoric acid. Substrate processing equipment. 11. The substrate processing apparatus according to claim 1, wherein the cleaning liquid contains a chemical such as hydrofluoric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, and ammonia. 12. The substrate processing apparatus according to claim 1, wherein said cleaning liquid contains pure water. 13. A central part cleaning step of discharging a cleaning liquid to the central part of both sides of the substrate while rotating the substrate to clean the central part of both sides of the substrate; A peripheral edge etching step of discharging an etchant toward the substrate to etch a peripheral edge of the substrate. 14. The substrate processing method according to claim 13, wherein said central part cleaning step and said peripheral part etching step are performed in one processing chamber. 15. The method according to claim 1, wherein the step of cleaning the central portion and the step of etching the peripheral portion are performed simultaneously.
15. The substrate processing method according to 3 or 14.