JP2002313974A - Microwave circuit package and apparatus - Google Patents
Microwave circuit package and apparatusInfo
- Publication number
- JP2002313974A JP2002313974A JP2001119079A JP2001119079A JP2002313974A JP 2002313974 A JP2002313974 A JP 2002313974A JP 2001119079 A JP2001119079 A JP 2001119079A JP 2001119079 A JP2001119079 A JP 2001119079A JP 2002313974 A JP2002313974 A JP 2002313974A
- Authority
- JP
- Japan
- Prior art keywords
- microwave circuit
- circuit package
- frequency
- microwave
- packages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は高周波半導体を実装
するマイクロ波回路パッケージおよびマイクロ波回路装
置であって、特にパッケージ同士の接続に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave circuit package and a microwave circuit device for mounting a high-frequency semiconductor, and more particularly to a connection between packages.
【0002】[0002]
【従来の技術】従来のマイクロ波回路パッケージについ
て説明する。図8〜図10は従来のマイクロ波回路パッ
ケージの構造を表す図である。図8は斜視図、図9は断
面図、図10はパッケージ内層のパターン図である。図
8において、1は複数の誘電体基板を積層した多層基
板、2aは露出した高周波伝送線路(以下、マイクロス
トリップ線)、3は多層基板1内部の高周波回路または
接地パターンと接続されたメッキされたスルーホール、
4は多層基板1内部の高周波回路と駆動や制御のための
信号の入出力を行う入出力端子、5は高周波半導体、6
は高周波半導体を多層基板1本体に実装するキャビティ
部であり、高周波半導体5実装用のパターンが設けられ
ている。7はワイヤ、8はキャビティ部6の周囲に設け
られワイヤ7を介して高周波半導体5に駆動信号や制御
信号を供給するための端子、11はキャビティ部6周辺
に設けられ、高周波半導体封止用のシールリングであ
る。また、図9において、図8と同じ構成要素には同じ
符号を付す。2bは多層基板1内の内部高周波伝送線
路、9は多層基板1内部の高周波回路である。図10に
おいて、図8と同じ構成要素には同じ符号を付す。2. Description of the Related Art A conventional microwave circuit package will be described. 8 to 10 are views showing the structure of a conventional microwave circuit package. 8 is a perspective view, FIG. 9 is a sectional view, and FIG. 10 is a pattern diagram of an inner layer of the package. In FIG. 8, reference numeral 1 denotes a multilayer substrate in which a plurality of dielectric substrates are stacked, 2a denotes an exposed high-frequency transmission line (hereinafter, microstrip line), and 3 denotes a plated high-frequency circuit in the multilayer substrate 1 connected to a ground pattern. Through holes,
Reference numeral 4 denotes an input / output terminal for inputting / outputting signals for driving and control with respect to a high-frequency circuit inside the multilayer substrate 1;
Is a cavity for mounting the high-frequency semiconductor in the main body of the multilayer substrate 1, and is provided with a pattern for mounting the high-frequency semiconductor 5. Reference numeral 7 denotes a wire, 8 denotes a terminal provided around the cavity 6 for supplying a driving signal or a control signal to the high-frequency semiconductor 5 through the wire 7, and 11 denotes a terminal provided around the cavity 6 for sealing the high-frequency semiconductor. It is a seal ring. In FIG. 9, the same components as those in FIG. 8 are denoted by the same reference numerals. 2b is an internal high-frequency transmission line in the multilayer substrate 1, and 9 is a high-frequency circuit inside the multilayer substrate 1. 10, the same components as those in FIG. 8 are denoted by the same reference numerals.
【0003】従来のマイクロ波回路パッケージは、入出
力端子4から高周波半導体5および高周波回路9に高周
波の制御信号および駆動信号が入力され、所望の高周波
特性の動作を行うものである。また、多層基板1は、全
層にわたって同様な誘電率を持った誘電体基板を積層し
たものである。In a conventional microwave circuit package, a high-frequency control signal and a driving signal are input from an input / output terminal 4 to a high-frequency semiconductor 5 and a high-frequency circuit 9 to perform an operation with desired high-frequency characteristics. The multilayer substrate 1 is formed by laminating dielectric substrates having the same dielectric constant over all layers.
【0004】従来の図8〜図10に示したようなパッケ
ージ同士を接続するためには、パッケージ間をワイヤで
接続し、また、シールリング11による封入を行うた
め、パッケージ本体上部に隙間が生じ、パッケージの小
型化が難しかった。さらに、組み立てによる接続部の特
性のばらつきが生じ、工程数が多くなることで価格が高
くなる問題があり、さらに、実装、組み立てのための空
間的な領域マージンが必要であり、高密度化という点で
問題があった。In order to connect the conventional packages as shown in FIGS. 8 to 10, the packages are connected by wires, and the package is sealed by a seal ring 11, so that a gap is formed at the top of the package body. It was difficult to reduce the size of the package. Furthermore, there is a problem that the characteristics of the connection portion are varied due to the assembly, and the number of processes increases, thereby increasing the price. Further, a spatial area margin for mounting and assembling is required, which is called high density. There was a problem in point.
【0005】[0005]
【発明が解決しようとする課題】本発明は、以上のよう
な問題点を解決するためになされたもので、マイクロ波
回路パッケージ間の接続を簡素化し、パッケージ接続部
の特性劣化を軽減し、パッケージの小型化、低コスト
化、高周波回路の高密度化を図るものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and simplifies the connection between microwave circuit packages, reduces the deterioration of the characteristics of the package connection part, It is intended to reduce the size and cost of the package and increase the density of the high-frequency circuit.
【0006】[0006]
【課題を解決するための手段】本発明に係わるマイクロ
波回路パッケージは、(1)高周波半導体を実装するキ
ャビティ部と、高周波伝送線路を有し、複数の誘電体基
板を積層して構成されたマイクロ波回路パッケージであ
って、マイクロ波回路パッケージ上面もしくは下面に設
けられ、前記高周波伝送線路が信号の入出力を行うため
の入出力端子を有し、複数のマイクロ波回路パッケージ
を積み重ねる際、前記複数のマイクロ波回路パッケージ
の入出力端子同士を互いに接触するよう配置して構成し
たものである。According to the present invention, there is provided a microwave circuit package comprising: (1) a cavity for mounting a high-frequency semiconductor, a high-frequency transmission line, and a plurality of dielectric substrates laminated. A microwave circuit package, provided on the upper or lower surface of the microwave circuit package, wherein the high-frequency transmission line has an input / output terminal for inputting / outputting a signal, and when stacking a plurality of microwave circuit packages, The input / output terminals of a plurality of microwave circuit packages are arranged so as to be in contact with each other.
【0007】また、(2)前記積み重ねた複数のマイク
ロ波回路パッケージの任意のマイクロ波回路パッケージ
の端部を他のマイクロ波回路パッケージの端部より突出
または、後退させて積み重ね、当該突出部に高周波伝送
線路の入出力端子を有するものである。(2) An end of an arbitrary one of the plurality of stacked microwave circuit packages is stacked so as to protrude or retreat from an end of another microwave circuit package, and to the protruding portion. It has an input / output terminal of a high-frequency transmission line.
【0008】また、(3)前記積み重ねた複数のマイク
ロ波回路パッケージの端部に前記高周波伝送線路の入出
力端子を有し、当該端部を前記積み重ねた複数のマイク
ロ波回路パッケージの上から順に階段状、もしくは逆階
段状の積み重ねて配置したものである。(3) An input / output terminal of the high-frequency transmission line is provided at an end of the plurality of stacked microwave circuit packages, and the ends are sequentially arranged from the top of the stacked plurality of microwave circuit packages. They are arranged in a stepped or inverted staircase.
【0009】また、前記キャビティ部は複数個配置され
ているものである。The plurality of cavities are arranged.
【0010】また、(2)または(3)の複数のマイク
ロ波回路パッケージを前記端部の入出力端子同士が互い
に接触するように配置して構成したものである。Further, the plurality of microwave circuit packages of (2) or (3) are arranged so that the input / output terminals at the ends are in contact with each other.
【0011】[0011]
【発明の実施の形態】実施の形態1.以下、本実施の形
態1に係わるマイクロ波回路パッケージについて説明す
る。図1は本実施の形態1に係わるマイクロ波回路パッ
ケージを構成する多層基板の斜視図、図2は上面図、図
3は図2中の直線AAにおける側面断面図、図4は図2
中の直線BBにおける側面断面図である。図1において
1は誘電体基板を複数積層した多層基板、2aはマイク
ロストリップ線、3は金属メッキされたスルーホール、
4は入出力端子、5は高周波半導体、6は高周波半導体
を多層基板1本体に実装するキャビティ部であり、高周
波半導体5実装用のパターンが設けられている。7はワ
イヤ、8はキャビティ部6の周囲に設けられワイヤ7を
介して高周波半導体5に駆動信号や制御信号を供給する
ための端子である。図2において図1と同じ構成要素に
は同じ符号を付す。図3においても図1と同じ構成要素
には同じ符号を付す。2bは多層基板1内の内部高周波
伝送線路、9は高周波回路、10は内部高周波伝送線路
2bの上層および下層部に配置された接地パターンであ
る。図4においても図1と同じ構成要素には同じ符号を
付す。また、パッケージの内層パターンは従来例の図1
0と同様なパターンを持つものとする。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, the microwave circuit package according to the first embodiment will be described. FIG. 1 is a perspective view of a multilayer substrate constituting the microwave circuit package according to the first embodiment, FIG. 2 is a top view, FIG. 3 is a side sectional view taken along a line AA in FIG. 2, and FIG.
It is side surface sectional drawing in the straight line BB in a middle. In FIG. 1, 1 is a multi-layer substrate in which a plurality of dielectric substrates are stacked, 2a is a microstrip line, 3 is a metal-plated through hole,
4 is an input / output terminal, 5 is a high-frequency semiconductor, and 6 is a cavity for mounting the high-frequency semiconductor on the main body of the multilayer substrate 1, and has a pattern for mounting the high-frequency semiconductor 5. Reference numeral 7 denotes a wire, and 8 denotes a terminal provided around the cavity 6 for supplying a driving signal and a control signal to the high-frequency semiconductor 5 via the wire 7. 2, the same components as those in FIG. 1 are denoted by the same reference numerals. 3, the same components as those in FIG. 1 are denoted by the same reference numerals. Reference numeral 2b denotes an internal high-frequency transmission line in the multilayer substrate 1, reference numeral 9 denotes a high-frequency circuit, and reference numeral 10 denotes a ground pattern disposed in an upper layer and a lower layer of the internal high-frequency transmission line 2b. 4, the same components as those in FIG. 1 are denoted by the same reference numerals. The inner layer pattern of the package is the same as that of the conventional example shown in FIG.
It has a pattern similar to 0.
【0012】本実施の形態1では、図1〜図4および図
10に示した多層基板を複数積み重ねて一体化し、図5
(a)および(b)に示したようなマイクロ波回路パッ
ケージを構成する。その際、高周波半導体と接続するた
めのワイヤ7がマイクロ波回路パッケージ最上面より突
出しないよう充分な深さを持ってキャビティ部を構成
し、従来例では必要であったシールリングベースを用い
ない。そのため、従来必要であったシールリング封入の
ため生じるパッケージ本体上部の隙間が無くなるため、
小型化が容易となる。In the first embodiment, a plurality of the multilayer substrates shown in FIGS. 1 to 4 and FIG.
A microwave circuit package as shown in FIGS. At this time, the cavity is formed with a sufficient depth so that the wire 7 for connecting to the high-frequency semiconductor does not protrude from the uppermost surface of the microwave circuit package, and the seal ring base required in the conventional example is not used. This eliminates the gap at the top of the package body that is required for sealing ring sealing, which was required in the past.
Downsizing becomes easy.
【0013】図5(a)は本実施の形態1に係わるマイ
クロ波回路パッケージの構成を表す側面図である。図5
において1a、1b、1c、1dは図1で示した多層基
板であり、これらを一体化してマイクロ波回路パッケー
ジを構成する。図1と同じ構成要素には同じ符号を付
す。また、図5(b)は当該マイクロ波回路パッケージ
の上面図である。FIG. 5A is a side view showing the configuration of the microwave circuit package according to the first embodiment. FIG.
In the figures, reference numerals 1a, 1b, 1c, and 1d denote the multilayer substrates shown in FIG. 1, which are integrated to constitute a microwave circuit package. The same components as those in FIG. 1 are denoted by the same reference numerals. FIG. 5B is a top view of the microwave circuit package.
【0014】入出力端子4を介して一方の多層基板内の
高周波回路9と他方の高周波回路9または高周波半導体
5などと接続するようにし、1a〜1dを一体化して構
成したマイクロ波回路パッケージの入出力端子4から高
周波半導体5および高周波回路9に高周波の制御信号お
よび駆動信号が入力され、所望の高周波特性の動作を行
うこととした。A high-frequency circuit 9 in one multilayer substrate is connected to the other high-frequency circuit 9 or the high-frequency semiconductor 5 or the like via the input / output terminal 4 so that a microwave circuit package 1a to 1d is integrated. A high-frequency control signal and a driving signal are input from the input / output terminal 4 to the high-frequency semiconductor 5 and the high-frequency circuit 9 to perform an operation with desired high-frequency characteristics.
【0015】そして、図5(a)および(b)に示した
マイクロ波回路パッケージ同士を接続する際には、図6
(a)のように互いの入力端子4同士とマイクロストリ
ップ線2同士を直接接触することで接続を行う。これに
よって、空間マージンを小さくし、小型化が可能なマイ
クロ波回路パッケージを得る。図6(a)において1a
〜1hは図1で示した多層基板であり、1a〜1d、お
よび1e〜1hをそれぞれ一体化して一つのマイクロ波
回路パッケージを構成する。図6(b)および図6
(c)はそれぞれ接触面のパターンを表した図である。
図に示したように、接触面に同じパターンを設け、上下
面を合わせることで、パッケージ同士の接続を行う。When connecting the microwave circuit packages shown in FIGS. 5A and 5B, FIG.
The connection is made by directly contacting the input terminals 4 with each other and the microstrip lines 2 as shown in FIG. As a result, a microwave circuit package capable of reducing the space margin and reducing the size is obtained. In FIG. 6A, 1a
1 to 1 h are the multi-layer boards shown in FIG. 1, each of which integrates 1 a to 1 d and 1 e to 1 h to constitute one microwave circuit package. FIG. 6B and FIG.
(C) is a figure showing the pattern of the contact surface.
As shown in the figure, the same pattern is provided on the contact surface, and the upper and lower surfaces are aligned to connect the packages.
【0016】なお、図1〜図4ではキャビティ部が一つ
しかない多層基板について示したが、本実施の形態1に
係わるマイクロ波回路パッケージでは多層基板にキャビ
ティ部を複数有するものを用いてもよい。Although FIGS. 1 to 4 show a multilayer substrate having only one cavity, the microwave circuit package according to the first embodiment may use a multilayer substrate having a plurality of cavities. Good.
【0017】以上のように、本実施の形態1では、高周
波半導体と接続するワイヤがマイクロ波回路パッケージ
最上面より突出しないよう充分な深さを持って構成され
たキャビティ部を持った複数の多層基板を積み重ねて一
体化したマイクロ波回路パッケージとし、当該パッケー
ジ端部を階段状とし、複数の当該マイクロ波回路パッケ
ージ同士を接続する際、前記階段状端部を互いに接触す
るように構成して接続するため、ワイヤなどの特別な部
材を用いず、小型化、高周波回路の高密度実装を実現す
るものである。As described above, in the first embodiment, a plurality of multi-layers having a cavity formed with a sufficient depth so that the wires connected to the high-frequency semiconductor do not protrude from the uppermost surface of the microwave circuit package. A microwave circuit package is obtained by stacking and integrating substrates, and the ends of the package are stepped, and when connecting the plurality of microwave circuit packages, the stepped ends are configured to be in contact with each other and connected. Therefore, miniaturization and high-density mounting of a high-frequency circuit are realized without using a special member such as a wire.
【0018】実施の形態2.図7は本実施の形態2に係
わるマイクロ波回路パッケージの側面を表す図である。
1a〜1jは図1〜図4に示した本マイクロ波回路パッ
ケージを構成する一つ、または複数のキャビティ部を持
つ多層基板であり、1a〜1e、および1f〜1jをそ
れぞれ一体化して一つのマイクロ波回路パッケージを構
成する。実施の形態1と同じ構成要素には同じ符号を付
す。Embodiment 2 FIG. FIG. 7 is a diagram illustrating a side surface of the microwave circuit package according to the second embodiment.
Reference numerals 1a to 1j denote multilayer substrates having one or a plurality of cavities constituting the microwave circuit package shown in FIGS. 1 to 4, and each of the multilayer substrates 1a to 1e and 1f to 1j is integrated into one. Construct a microwave circuit package. The same components as those in the first embodiment are denoted by the same reference numerals.
【0019】本実施の形態2では、図7に示したように
複数積み重ねた多層基板の任意の段の端部を他の段の端
部より突出して配置し、他方のマイクロ波回路パッケー
ジの同じ段を後退させて配置し、ワイヤなどの接触のた
めの部材を用いず、パッケージ同士の接触を簡素化する
マイクロ波回路パッケージを得る。In the second embodiment, as shown in FIG. 7, an end of an arbitrary stage of a multi-layered multilayer substrate is disposed so as to protrude from an end of another stage, and the same microwave circuit package of the other microwave circuit package is provided. A microwave circuit package is provided in which steps are retracted and a package is simplified without using a contact member such as a wire.
【0020】[0020]
【発明の効果】以上のように、本発明では高周波半導体
と接続するワイヤがマイクロ波回路パッケージ最上面よ
り突出しないよう充分な深さを持って構成されたキャビ
ティ部を持った複数の多層基板を積み重ねて一体化した
マイクロ波回路パッケージであって、当該パッケージ端
部を階段状とし、当該複数のマイクロ波回路パッケージ
同士を接続する際、当該階段状端部を互いに接触するよ
うに構成して接続するため、ワイヤなどの特別な部材を
用いず、小型化、高周波回路の高密度実装を実現するも
のである。As described above, according to the present invention, a plurality of multilayer substrates having a cavity formed with a sufficient depth so that wires connected to a high-frequency semiconductor do not protrude from the uppermost surface of a microwave circuit package. A microwave circuit package that is stacked and integrated, wherein the package ends are stepped, and when connecting the plurality of microwave circuit packages, the stepped ends are configured to be in contact with each other and connected. Therefore, miniaturization and high-density mounting of a high-frequency circuit are realized without using a special member such as a wire.
【0021】また、複数積み重ねた多層基板全体で一つ
のマイクロ波回路パッケージを構成し、かつ任意の段の
端部を他の段より突出して配置し、もう一方のマイクロ
波回路パッケージの任意の段の端部を他の段より後退し
て配置し、当該突出部と後退部を嵌合して接続するた
め、パッケージ同士の接触を簡素化し、小型化、低コス
ト化、および高周波回路の高密度実装を実現するもので
ある。Further, one microwave circuit package is constituted by a plurality of stacked multilayer substrates as a whole, and an end of an arbitrary stage is arranged so as to protrude from another stage, and an arbitrary stage of the other microwave circuit package is arranged. Of the package is set back from the other step, and the protruding portion and the set-back portion are fitted and connected. This simplifies the contact between the packages, reduces the size and cost, and increases the density of the high-frequency circuit. It implements the implementation.
【図1】 本発明の実施の形態1に係わるマイクロ波回
路パッケージの多層基板の斜視図である。FIG. 1 is a perspective view of a multilayer substrate of a microwave circuit package according to Embodiment 1 of the present invention.
【図2】 本発明の実施の形態1に係わるマイクロ波回
路パッケージの多層基板の上面図である。FIG. 2 is a top view of the multilayer substrate of the microwave circuit package according to the first embodiment of the present invention.
【図3】 本発明の実施の形態1に係わるマイクロ波回
路パッケージの多層基板の直線AAでの側面断面図であ
る。FIG. 3 is a side sectional view taken along a straight line AA of the multilayer substrate of the microwave circuit package according to the first embodiment of the present invention;
【図4】 本発明の実施の形態1に係わるマイクロ波回
路パッケージの多層基板の直線BBでの側面断面図であ
る。FIG. 4 is a side sectional view taken along a straight line BB of the multilayer substrate of the microwave circuit package according to the first embodiment of the present invention;
【図5】 (a)本発明の実施の形態1に係わるマイク
ロ波回路パッケージの側面図である。(b)本発明の実
施の形態1に係わるマイクロ波回路パッケージの階段状
端部の上面図である。FIG. 5A is a side view of the microwave circuit package according to the first embodiment of the present invention. FIG. 2B is a top view of the stepped end of the microwave circuit package according to the first embodiment of the present invention.
【図6】 (a)本発明の実施の形態1に係わるマイク
ロ波回路パッケージの接続方法を表す図である。(b)
本発明の実施の形態1に係わるマイクロ波回路パッケー
ジの一方の階段状端部接触面である。(c)本発明の実
施の形態1に係わるマイクロ波回路パッケージの他方の
階段状端部接触面である。FIG. 6A is a diagram illustrating a connection method of the microwave circuit package according to the first embodiment of the present invention. (B)
FIG. 3 is a stepped end contact surface of one side of the microwave circuit package according to the first embodiment of the present invention. FIG. (C) The other stepped end contact surface of the microwave circuit package according to the first embodiment of the present invention.
【図7】 本発明の実施の形態2に係わるマイクロ波回
路パッケージの接続方法を表す図である。FIG. 7 is a diagram illustrating a connection method of the microwave circuit package according to the second embodiment of the present invention.
【図8】 従来のマイクロ波回路パッケージを表す斜視
図である。FIG. 8 is a perspective view illustrating a conventional microwave circuit package.
【図9】 従来のマイクロ波回路パッケージの側面断面
図である。FIG. 9 is a side sectional view of a conventional microwave circuit package.
【図10】 従来のマイクロ波回路パッケージの内層パ
ターンを表す図である。FIG. 10 is a diagram illustrating an inner layer pattern of a conventional microwave circuit package.
1 多層基板、 2a マイクロストリップ線、2b
内部高周波伝送線路、 3 メッキされたスルーホ
ール、4 入出力端子、 5 高周波半導体、 6
キャビティ部、7 ワイヤ、 8 キャビティ部の
端子、 9 高周波回路、10 接地パターン、
11 シールリングベース。1 multilayer board, 2a microstrip line, 2b
Internal high frequency transmission line, 3 plated through hole, 4 input / output terminals, 5 high frequency semiconductor, 6
Cavity part, 7 wire, 8 Terminal of cavity part, 9 High frequency circuit, 10 Ground pattern,
11 Seal ring base.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 25/18 // H05H 1/46 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 25/18 // H05H 1/46
Claims (5)
み重ねて構成されたマイクロ波回路パッケージであっ
て、 前記多層基板は、当該多層基板とワイヤで接続される高
周波半導体と、前記ワイヤが前記誘電体基板の最上面よ
り突出しないような深さをもって構成された前記高周波
半導体を実装するためのキャビティ部と、高周波伝送線
路と、多層基板の最上面もしくは最下面に設けられ、前
記高周波伝送線路が信号の入出力を行う入出力端子を有
し、 前記複数の多層基板を積み重ねる際、前記複数の多層基
板の入出力端子同士を互いに接触するよう配置して構成
したことを特徴とするマイクロ波回路パッケージ。1. A microwave circuit package formed by stacking a plurality of multilayer substrates on which dielectric substrates are stacked, wherein the multilayer substrate is a high-frequency semiconductor connected to the multilayer substrate by wires, and the wires are A cavity portion for mounting the high-frequency semiconductor having a depth not protruding from the uppermost surface of the dielectric substrate, a high-frequency transmission line, and a high-frequency transmission line provided on the uppermost surface or the lowermost surface of the multilayer substrate; Has an input / output terminal for inputting / outputting a signal, and when stacking the plurality of multilayer substrates, the microwave is characterized in that the input / output terminals of the plurality of multilayer substrates are arranged so as to be in contact with each other. Circuit package.
一部の多層基板の端部を残りの多層基板の端部より突出
または後退させ、かつ当該突出部または後退部に高周波
伝送線路の入出力端子を有することを特徴とする請求項
1記載のマイクロ波回路パッケージ。2. An end of a predetermined part of the multilayer substrate of the microwave circuit package is projected or retracted from an end of the remaining multilayer substrate, and an input / output terminal of a high-frequency transmission line is provided at the projected or retracted portion. The microwave circuit package according to claim 1, further comprising:
板の端部を上から順に階段状、もしくは逆階段状に配置
し、かつ当該階段状または逆階段状端部に前記高周波伝
送線路の入出力端子を有することを特徴とする請求項1
記載のマイクロ波回路パッケージ。3. An end portion of the multilayer substrate of the microwave circuit package is arranged in a stepwise or inverted stepwise order from the top, and an input / output terminal of the high-frequency transmission line is provided at the stepped or inverted stepped end. 2. The method according to claim 1, wherein
Microwave circuit package as described.
ることを特徴とする請求項1〜3のいずれか一項記載の
マイクロ波回路パッケージ。4. The microwave circuit package according to claim 1, wherein a plurality of said cavity portions are arranged.
のマイクロ波回路パッケージを前記端部の入出力端子同
士が互いに接触するように配置して構成したことを特徴
とするマイクロ波回路装置。5. A microwave comprising a plurality of microwave circuit packages according to claim 2, wherein said plurality of microwave circuit packages are arranged such that input / output terminals at said ends are in contact with each other. Circuit device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001119079A JP2002313974A (en) | 2001-04-18 | 2001-04-18 | Microwave circuit package and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001119079A JP2002313974A (en) | 2001-04-18 | 2001-04-18 | Microwave circuit package and apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2002313974A true JP2002313974A (en) | 2002-10-25 |
Family
ID=18969357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001119079A Pending JP2002313974A (en) | 2001-04-18 | 2001-04-18 | Microwave circuit package and apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2002313974A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045271A (en) * | 2008-08-18 | 2010-02-25 | Hitachi Metals Ltd | Multilayer circuit board |
-
2001
- 2001-04-18 JP JP2001119079A patent/JP2002313974A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045271A (en) * | 2008-08-18 | 2010-02-25 | Hitachi Metals Ltd | Multilayer circuit board |
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