JP2002305158A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the processing of a substrate uniform. SOLUTION: A rotary housing 2 is provided rotatably in a housing 1, and a rotary driving device 3 which rotates the rotary housing 2 is provided; and a platform 4 is provided at the upper part of the rotary housing 2, and a substrate 5 is supported on the platform 4. In a processing state, the heating temperature of a lamp heating device 11 is held at, for example 1,000 deg.C and in a conveyance stage, the substrate is conveyed, while the lamp heating device 11 is placed in operation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing apparatus having a lamp heating device.

[0002]

2. Description of the Related Art FIG. 3 is a schematic sectional view showing a conventional substrate processing apparatus. As shown in the drawing, a rotatable housing 2 is provided in a housing 1 so as to be rotatable, a rotary drive device 3 for rotating the rotatable housing 2 is provided, and a platform 4 made of quartz or the like is provided on an upper portion of the rotatable housing 2.
A substrate 5 is supported on a platform 4, and a gas supply device 7 for supplying a processing gas to a processing chamber 6 between the housing 1 and the platform 4 is provided, and a plasma for converting the processing gas supplied to the processing chamber 6 into plasma is provided. A generator 8 is provided, and a chamber valve 9 for transferring the substrate 5 from outside the apparatus to the platform 4 while the processing chamber 6 is evacuated, and for transferring the substrate 5 from above the platform 4 to the outside of the apparatus is provided. Lowering the substrate 5 onto the platform 4 by means of pins (not shown),
A substrate elevating device 10 for elevating the substrate 5 from above the platform 4 by pins is provided, a lamp heating device 11 is provided below the platform 4, and an electric supply line 12 for supplying electricity to the lamp heating device 11. Is provided, and a temperature measuring device 13 for measuring the temperature of the substrate 5 supported on the platform 4 is provided. The temperature measuring device 13 is connected to a control device 14 (not shown in a connection line),
The lamp heating device 11 is connected to the control device 14 via the electric supply line 12, and the control device 14 controls the heating temperature of the lamp heating device 11 based on the setting input for the operation sequence of the lamp heating device 11.

Next, a substrate processing method using the substrate processing apparatus shown in FIG. 3 will be described. First, the processing chamber 6
The substrate 5 to be processed is transported from the chamber valve 9 into the processing chamber 6 by an automatic transfer robot or the like in a state where is exhausted, and the substrate 5 is placed on the pins of the substrate elevating device 10. Next, the substrate 5 is lowered onto the platform 4 by the substrate lifting device 10 (transportation step). Next, the processing gas is supplied to the processing chamber 6 by the gas supply device 7, and the processing gas supplied to the processing chamber 6 is converted into plasma by the plasma generator 8, and the substrate 5 is processed (processing step). Next, the substrate 5 processed by the substrate lifting device 10 is lifted from above the platform 4. Next, the substrate 5 is transferred out of the processing chamber 6 from the chamber valve 9 by an automatic transfer robot or the like. Next, the substrate 5 to be processed is transferred from the chamber valve 9 into the processing chamber 6 by an automatic transfer robot or the like, and the substrate 5 is placed on the pins of the substrate lifting device 10. Next, the substrate 5 is lowered onto the platform 4 by the substrate lifting device 10 (transportation step).
Next, a processing gas is supplied to the processing chamber 6 by the gas supply device 7, and the processing chamber 6 is supplied by the plasma generator 8.
The substrate 5 is processed by converting the processing gas supplied to the substrate into plasma (processing step). In this manner, the substrate 5
Process.

[0004] In this case, conventionally, as shown in FIG. 4, in step A, and controls the lamp heating device 11 by the controller 14, it processes the heating temperature of the lamp heater 11 temperature t ₁ for example 1000 ° C, and in the transporting process B, the lamp heating device 11 is controlled by the control device 14 so that the heating of the lamp heating device 11 is stopped immediately after the processing process A is completed, and the lamp is heated before the processing process A is started. The heating of the heating device 11 is started. In this case, the heating temperature of the lamp heater 11 is lowered to room t _2, the heating temperature of the lamp heater 11 is held in a fixed time at room temperature t _2,
The heating temperature of the lamp heater 11 before the start of the process A is heated to the processing temperature t _1.

[0005]

[SUMMARY OF THE INVENTION However, in such a substrate processing apparatus, the conveyance step B, because the temperature in the processing chamber 6 is lowered to room temperature t _2, the heating of the lamp heater 11 in process step A Temperature to processing temperature t
_{When set to 1} , the temperature inside the processing chamber 6 becomes unstable, so that the processing of the substrate 5 cannot be made uniform within the surface of the substrate 5. For example, when the process is to form a film on the substrate 5, the thickness and quality of the film formed on the substrate 5 cannot be made uniform within the surface of the substrate 5.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has as its object to provide a substrate processing apparatus capable of uniformly processing a substrate.

[0007]

According to the present invention, there is provided a substrate processing apparatus having a lamp heating apparatus for processing a substrate in a processing chamber, wherein the lamp heating apparatus is operated. Transports the substrate.

[0008]

FIG. 1 is a schematic sectional view showing a substrate processing apparatus according to the present invention. As shown in the figure, a control device 21 connected to the temperature measurement device 13 (not shown in the drawing) is provided. The lamp heating device 11 is connected to the control device 21 via the electric supply line 12. Controls the heating temperature of the lamp heating device 11 based on the setting input regarding the operation sequence of the lamp heating device 11.

The heating temperature control of the lamp heating device of the substrate processing apparatus shown in FIG. 1 will be described with reference to FIG. First, in processing step A, the controller 21 controls the lamp heating device 1
And controls the 1, to hold the heating temperature of the lamp heater 11 treatment temperature _{t 1} for example, 1000 ° C.. Then, in the transport step B, the control device 21 controls the lamp heating device 1
The substrate 5 processed by the substrate lifting / lowering device 10 is lifted from the platform 4 while the lamp heating device 11 is operated by controlling the lamp heating device 11, and the substrate 5 is moved from the chamber valve 9 to the processing chamber by an automatic transfer robot or the like. The substrate 5 to be processed is transferred from the chamber valve 9 into the processing chamber 6 by an automatic transfer robot or the like, and the substrate 5 is placed on the pins of the substrate lifting device 10.
, The substrate 5 is lowered onto the platform 4 to transport the substrate 5. That is, in the conveyance step B, the temperature is lowered the heating temperature of the lamp heater 11 to a higher standby temperature t ₃ for example 0.99 ° C. above room temperature t _2, the lamp heater 11
The heating temperature was kept constant time standby temperature t _3, the temperature is raised to the heating temperature up to the processing temperature t ₁ of the lamp heater 11 before the start of the process steps A. Here, the time required for the processing step A is about 60 seconds, and the time required for the transporting step B is about 1 second.
Is 30 seconds, the time required to lowering the processing temperatures t ₁ to a standby temperature t ₃ is about 30 seconds, the time required for raising the temperature from the standby temperature t ₃ to the treatment temperature t ₁ is about 40 seconds is there.

[0010] In this substrate processing apparatus, the conveyance step B, because the temperature in the processing chamber 6 is not reduced to room temperature t _2, the heating temperature of the lamp heater 11 process temperature t ₁ in process step A Sometimes, the temperature in the processing chamber 6 does not become unstable.
Can be made uniform within the surface of the substrate 5. For example, when the process is to form a film on the substrate 5, the thickness and quality of the film formed on the substrate 5 can be made uniform within the surface of the substrate 5. For example, in the conventional substrate processing apparatus shown in FIG. 3, the uniformity of the thickness of the film formed on the substrate 5 is ± 10%, but in the substrate processing apparatus shown in FIG. The uniformity of the film thickness of the film formed was ± 3%. When the processing is a heat treatment of the substrate 5, the heat treatment can be uniformly performed in the surface of the substrate 5.

[0011] Incidentally, in the above-described embodiment, although the processing temperature _{t 1} for example 1000 ° C., the process temperature _{t 1} may be 400 to 1,150 ° C.. Also, in the above-described embodiment, although the standby temperature t ₃ for example, the 0.99 ° C., the standby temperature t ₃ is higher than room temperature t ₂ and the treatment temperature t
May be lower than _1, the standby temperature _{t 3 100~200}
C is desirable.

[0012]

According to the substrate processing apparatus of the present invention,
Since the temperature in the processing chamber does not become unstable in the processing step, the processing of the substrate can be made uniform.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a substrate processing apparatus according to the present invention.

FIG. 2 is an explanatory diagram of heating temperature control of a lamp heating device of the substrate processing apparatus shown in FIG.

FIG. 3 is a schematic sectional view showing a conventional substrate processing apparatus.

4 is an explanatory diagram of heating temperature control of a lamp heating device of the substrate processing apparatus shown in FIG.

[Explanation of symbols]

 5: substrate 6: processing chamber 11: lamp heating device

Claims (1)

[Claims] 1. A substrate processing apparatus having a lamp heating device and processing a substrate in a processing chamber, wherein the substrate is transferred while the lamp heating device is operated.